JPH04174507A - Photomask transferring equipment - Google Patents
Photomask transferring equipmentInfo
- Publication number
- JPH04174507A JPH04174507A JP2302229A JP30222990A JPH04174507A JP H04174507 A JPH04174507 A JP H04174507A JP 2302229 A JP2302229 A JP 2302229A JP 30222990 A JP30222990 A JP 30222990A JP H04174507 A JPH04174507 A JP H04174507A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- seal
- thickness
- mask
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000013013 elastic material Substances 0.000 abstract description 2
- 230000000717 retained effect Effects 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はフォトマスク転写装置に関し、特に半導体集積
回路の写真蝕刻工程に用いるフォトマスク露光装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask transfer device, and more particularly to a photomask exposure device used in a photolithography process for semiconductor integrated circuits.
半導体集積回路の写真蝕刻工程中に用いられるフォトマ
スクの露光装置の一つとして、−枚のマスターマスクか
ら複数枚のコピーマスクを得るための転写装置がある。2. Description of the Related Art As one type of photomask exposure apparatus used during the photolithography process of semiconductor integrated circuits, there is a transfer apparatus for obtaining a plurality of copy masks from a master mask.
この従来の転写装置の一方式に、マスターマスクとその
画像を露光により転写するコピー用基板とを密着させる
タイプのコンタクトプリンターと呼ばれるものがある。One type of such conventional transfer apparatus is a type called a contact printer in which a master mask and a copying substrate to which the image thereof is transferred by exposure are brought into close contact.
この装置において、マスターマスクとコピー用基板とを
密着保持する部分では、第3図の断面模式図に示すよう
に、光源38から発せられ、コリメーションレンズ32
にて平行にされた紫外線39を照射するために、密着保
持するマスクと基板とをプリンティングフレーム35に
付随する弾性体のシール31に真空吸着されるという構
造を有していた。In this device, as shown in the cross-sectional schematic diagram of FIG.
In order to irradiate parallel ultraviolet rays 39, the mask and substrate, which are held in close contact with each other, are vacuum-adsorbed to an elastic seal 31 attached to the printing frame 35.
次に、コンタクトプリンターを使ったコピーマスクの製
造工程を、第4図(a)〜(f)の断面模式図に基づき
説明する。まず、板厚2.3mmのガラス基板41(例
えば石英またはソーダライム〉の上に、800〜120
0Aの厚さにクロム42を蒸着したコピー用基板をきれ
いに洗浄する(a)0次に、レジスト44を4600〜
6000人の厚さに塗布後プリベークを行う(b)。そ
の後、前述したコンタクトプリンターを使い、マスター
マスク43のパターンをコピー用基板に一括露光する(
C)。この基板を現像装置にセットし、100〜400
rpmで回転させながら現像液をスプレー状にして吹き
かけ、不要部のレジスト44を溶解除去する(d)。ク
ロム42とレジスト44の密着を強化するためボストベ
ークを行った後、硝酸第2セリウムアンモニウムと過塩
素酸を主成分とするエツチング液に浸漬し、レジスト4
4が除去された部分のクロム42をエツチングする(e
)。fif&にレジスト44を剥離液にて除去し、フォ
トマスクが完成する(f)。Next, the manufacturing process of a copy mask using a contact printer will be explained based on the schematic cross-sectional views of FIGS. 4(a) to 4(f). First, on a glass substrate 41 (for example, quartz or soda lime) with a thickness of 2.3 mm,
Clean the copying substrate on which chromium 42 has been deposited to a thickness of 0 A. (a) 0 Next, resist 44 is coated with
Pre-baking is performed after coating to a thickness of 6,000 people (b). After that, using the contact printer mentioned above, the pattern of the master mask 43 is exposed all at once onto the copy substrate (
C). Set this substrate in the developing device and apply 100 to 400
While rotating at rpm, a developer is sprayed onto the resist 44 to dissolve and remove unnecessary portions of the resist 44 (d). After performing a boss bake to strengthen the adhesion between the chromium 42 and the resist 44, the resist 4 is immersed in an etching solution containing ceric ammonium nitrate and perchloric acid as main components.
Etch the chromium 42 in the area where 4 has been removed (e
). Finally, the resist 44 is removed using a stripping solution to complete the photomask (f).
従来、上述した製造工程を経て作られたコピーフォトマ
スクは、ウェハーへのパターン転写に使用された後、廃
棄されていた。しかし、基板として石英のような高価な
ものを使う場合、コストを低減するためにリサイクル使
用が行われるようになった。すなわち使用済フォトマス
クのクロムパターンをエツチングして除去した後、石英
基板を10〜100μm再研磨し、その後クロムを80
0〜1200A蒸着させ、第4図の製造工程に従って再
使用している。Conventionally, copy photomasks made through the above-described manufacturing process have been used to transfer patterns onto wafers and then discarded. However, when using an expensive material such as quartz as a substrate, recycling has begun to be used to reduce costs. That is, after etching and removing the chrome pattern on the used photomask, the quartz substrate is re-polished by 10 to 100 μm, and then the chromium is
0 to 1200A is deposited and reused according to the manufacturing process shown in FIG.
しかしながら、リサイクル使用する石英基板は、本来の
板厚2.3mmに対し2,0〜2.2mm程度に薄くな
っているため、上述した従来のコンタクトプリンターで
はシールとプレートくマスク又は基板)との隙間から真
空が漏れてしまい、マスクと基板とが密着不良をおこし
、プリントが実行不能になってしまうという問題点があ
つな。However, since recycled quartz substrates are thinner than the original thickness of 2.3 mm, they are approximately 2.0 to 2.2 mm thick, so in the conventional contact printers described above, the seal and plate (mask or substrate) are thinner than the original thickness of 2.3 mm. Another problem is that vacuum leaks through the gap, causing poor adhesion between the mask and the substrate, making printing impossible.
本発明は、前述した従来装置の不都合点に鑑みてなされ
たものであり、その目的とするところは、基板の板厚の
ばらつきに対応できるフォトマスク転写装置を提供する
ことである。The present invention has been made in view of the above-mentioned disadvantages of the conventional apparatus, and an object of the present invention is to provide a photomask transfer apparatus that can cope with variations in the thickness of the substrate.
本発明のフォトマスク転写装置は、マスターマスクとマ
スターマスクの画像を転写すべきコピー用基板とを密着
させ、弾性体シールを介してプリンティングフレームに
真空吸着保持し、露光により画像を転写するフォトマス
ク転写装置において、前記コピー用基板の厚さのばらつ
きに対応する板厚補正用シールを着脱可能に具備してい
る。The photomask transfer device of the present invention brings a master mask and a copying substrate to which an image of the master mask is to be transferred into close contact with each other, holds the master mask on a printing frame by vacuum suction via an elastic seal, and transfers the image by exposure to the photomask. The transfer device is removably equipped with a plate thickness correction seal that corresponds to variations in the thickness of the copy substrate.
以下本発明を図面を用いて詳細に説明する。第1図(a
)は本発明によるマスク転写装置の一実施例であるコン
タクトプリンターのマスターマスクとコピー用基板を密
着保持する部分の断面模式図であり、同図(b)は同図
(a)の斜視図である。板厚が2.0〜2.2mm程度
の薄い基板を使用する場合、弾性体材料のシール11の
上に更に0.1〜0.5mm厚の板厚補正用シール12
を取りつけ、マスターマスク13とコピー用基板14を
真空吸着させる。本実施例の装置によってリサイクル基
板の利用率を約2割上げることができな。The present invention will be explained in detail below using the drawings. Figure 1 (a
) is a schematic cross-sectional view of a portion of a contact printer that is an embodiment of the mask transfer device according to the present invention, which holds a master mask and a copying substrate in close contact; FIG. be. When using a thin board with a thickness of about 2.0 to 2.2 mm, a thickness correction seal 12 with a thickness of 0.1 to 0.5 mm is added on top of the elastic material seal 11.
is attached, and the master mask 13 and copy substrate 14 are vacuum-adsorbed. With the device of this embodiment, it is not possible to increase the utilization rate of recycled substrates by approximately 20%.
第2図は本発明によるマスク転写装置のもう一つの実施
例であるコンタクトプリンターのマスターマスクとコピ
ー用基板とを密着保持する部分の断面模式図である。同
図<a)は通常の板厚の基板を使用する場合、同図<b
>は薄い板厚の基板を使用する場合、同図(c)は厚い
板厚の基板を使用する場合である。I](a)のように
、通常の板厚のコピー用基板24を使用する場合、シー
ル21の上に薄い板厚補正用シールA26を取り付け、
マスターマスク23とコピー用基板24を真空吸着させ
るか、図(b)のように薄い板厚のコピー用基板24を
使用する場合は、シール21の上に厚い板厚補正用シー
ルB27を取りつけて使用し、図(c)のように厚い板
厚の場合はシール21のみを用いる。本実施例によって
も、リサイクル基板の利用率を約2割上げることができ
な。FIG. 2 is a schematic cross-sectional view of a portion of a contact printer, which is another embodiment of the mask transfer device according to the present invention, that holds a master mask and a copying substrate in close contact with each other. The figure <a) is the figure <b when using a board with a normal board thickness.
> is the case where a thin board is used, and (c) in the same figure is the case where a thick board is used. I] When using a copy board 24 of normal thickness as in (a), attach a thin thickness correction sticker A26 on top of the sticker 21,
Either vacuum adsorb the master mask 23 and the copy board 24, or if you use a thin copy board 24 as shown in Figure (b), attach a thick thickness correction seal B27 on top of the seal 21. If the plate is thick as shown in Figure (c), only the seal 21 is used. Even with this embodiment, it is not possible to increase the utilization rate of recycled substrates by about 20%.
以上説明したように、本発明によるフォトマスク転写装
置を採用することにより、従来装置にて問題となってい
た薄い板厚の基板を使用した時の真空の漏れを解消する
ことができ、リサイクル基板の利用率を約2割上げるこ
とが可能となる。As explained above, by adopting the photomask transfer device according to the present invention, it is possible to eliminate vacuum leakage when using thin substrates, which was a problem with conventional devices, and to recycle substrates. This makes it possible to increase the utilization rate by approximately 20%.
第1図(a)は本発明の一実施例におけるコンタクトプ
リンターの一部を示す断面模式図、第1図(b>は第1
図(a>の斜視図、第2図は本発明の他の実施例におけ
る断面模式図で、第2図(a)は通常の板厚の基板を使
用した時の断面模式図、第2図(b)は薄い板厚の基板
を使用した時の断面模式図、第2図(c)は厚い板厚の
基板を使用した時の断面模式図、第3区は従来のコンタ
クトプリンターの一部を示す断面模式図、第4図(a)
〜(f)はコンタクトプリンターを使ったマスクの製造
工程を断面図で示した工程区である。
11.21.31・・・シール、12・・・板厚補正用
シール、13,23.33.43・・・マスターマスク
、14,24.34・・・コピー用基板、15゜35・
・・プリンティングフレーム、26・・・板厚補正用シ
ールA、27・・・板厚補正用シールB、32・。
コリメーションレンズ、38・・・光源、39.49・
・・紫外線、41・・・ガラス基板、42・・・クロム
、44・・・レジスト。FIG. 1(a) is a schematic cross-sectional view showing a part of a contact printer in an embodiment of the present invention, and FIG.
FIG. 2 is a schematic cross-sectional view of another embodiment of the present invention, and FIG. (b) is a schematic cross-sectional diagram when using a thin board, Figure 2 (c) is a schematic cross-sectional diagram when using a thick board, and the third section is a part of a conventional contact printer. A schematic cross-sectional diagram showing the
~(f) is a process section showing the manufacturing process of a mask using a contact printer in a cross-sectional view. 11.21.31...Seal, 12...Plate thickness correction seal, 13,23.33.43...Master mask, 14,24.34...Copy board, 15°35.
... Printing frame, 26... Seal A for plate thickness correction, 27... Seal B for plate thickness correction, 32. Collimation lens, 38... Light source, 39.49.
...Ultraviolet light, 41...Glass substrate, 42...Chromium, 44...Resist.
Claims (1)
コピー用基板とを密着させ、弾性体シールを介してプリ
ンティングフレームに真空吸着保持し、露光により画像
を転写するフォトマスク転写装置において、前記コピー
用基板の厚さのばらつきに対応する板厚補正用シールを
着脱可能に具備したことを特徴とするフォトマスク転写
装置。In a photomask transfer device in which a master mask and a copying substrate to which an image of the master mask is to be transferred are brought into close contact with each other, the copying substrate is vacuum-adsorbed and held via an elastic seal to a printing frame, and the image is transferred by exposure. A photomask transfer device characterized by being equipped with a removable plate thickness correction sticker that corresponds to thickness variations.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2302229A JPH04174507A (en) | 1990-11-07 | 1990-11-07 | Photomask transferring equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2302229A JPH04174507A (en) | 1990-11-07 | 1990-11-07 | Photomask transferring equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04174507A true JPH04174507A (en) | 1992-06-22 |
Family
ID=17906504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2302229A Pending JPH04174507A (en) | 1990-11-07 | 1990-11-07 | Photomask transferring equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04174507A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103698973A (en) * | 2013-12-17 | 2014-04-02 | 广西大学 | Preparation method of flexible photoetching mask plate |
-
1990
- 1990-11-07 JP JP2302229A patent/JPH04174507A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103698973A (en) * | 2013-12-17 | 2014-04-02 | 广西大学 | Preparation method of flexible photoetching mask plate |
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