JPH04170520A - Manufacture of liquid crystal display panel and liquid crystal display substrate - Google Patents

Manufacture of liquid crystal display panel and liquid crystal display substrate

Info

Publication number
JPH04170520A
JPH04170520A JP29797890A JP29797890A JPH04170520A JP H04170520 A JPH04170520 A JP H04170520A JP 29797890 A JP29797890 A JP 29797890A JP 29797890 A JP29797890 A JP 29797890A JP H04170520 A JPH04170520 A JP H04170520A
Authority
JP
Japan
Prior art keywords
liquid crystal
crystal display
display substrate
base material
transparent base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29797890A
Other versions
JP2929704B2 (en
Inventor
Katsuhide Tsukamoto
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP29797890A priority Critical patent/JP2929704B2/en
Publication of JPH04170520A publication Critical patent/JPH04170520A/en
Application granted granted Critical
Publication of JP2929704B2 publication Critical patent/JP2929704B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE: To realize a low price and manufacture of a large scope (for example 50 in.) by applying a liquid crystal display substrate, wherein a liquid crystal driving foil-shape circuit is stuck to a transparent base material via a resin layer, to a constituting element of one substrate of a liquid crystal panel.
CONSTITUTION: A liquid crystal display substrate, wherein a liquid crystal driving foil-shape circuit 101 comprising a liquid crystal driving membrane circuit formed on a transparent insulator membrane 108 is stuck to a transparent base material 103 via a resin layer 102, is applied to a constituting element of one substrate of a liquid crystal panel. In this case, plural sheets of liquid crystal driving foil-shape circuits 101 are arranged and connected to each other in a plane on a sheet of a transparent base material 103 to obtain a seamless image. A driving circuit is thus constituted by transferring an array of a small size driving circuit with a good yield rate on a transparent base material so that a liquid crystal display substrate can be manufactured with an excellent yield rate and an ultra-large liquid crystal display substrate can be manufactured.
COPYRIGHT: (C)1992,JPO&Japio
JP29797890A 1990-11-01 1990-11-01 Method of manufacturing a liquid crystal display substrate Expired - Fee Related JP2929704B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29797890A JP2929704B2 (en) 1990-11-01 1990-11-01 Method of manufacturing a liquid crystal display substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29797890A JP2929704B2 (en) 1990-11-01 1990-11-01 Method of manufacturing a liquid crystal display substrate

Publications (2)

Publication Number Publication Date
JPH04170520A true JPH04170520A (en) 1992-06-18
JP2929704B2 JP2929704B2 (en) 1999-08-03

Family

ID=17853558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29797890A Expired - Fee Related JP2929704B2 (en) 1990-11-01 1990-11-01 Method of manufacturing a liquid crystal display substrate

Country Status (1)

Country Link
JP (1) JP2929704B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125931A (en) * 1996-08-27 1998-05-15 Seiko Epson Corp Transfer of thin film element, thin film element, thin film integrated circuit device, active materix substrate and liquid crystal display device
JPH10125930A (en) * 1996-08-27 1998-05-15 Seiko Epson Corp Separation method
JP2004140383A (en) * 1996-08-27 2004-05-13 Seiko Epson Corp Method of transferring thin film element, thin film element, thin film integrated circuit device, active matrix substrate, and liquid crystal display device
JP2004140381A (en) * 1996-08-27 2004-05-13 Seiko Epson Corp Method of transferring thin film element, thin film element, thin film integrated circuit device, active matrix substrate, and liquid crystal display device
US6998282B1 (en) 1995-02-16 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7050138B1 (en) 1995-03-10 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device having a driver circuit attached to a display substrate
US7094665B2 (en) 1996-08-27 2006-08-22 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
JP2007311827A (en) * 2007-08-16 2007-11-29 Semiconductor Energy Lab Co Ltd Peeling method
USRE40601E1 (en) 1996-11-12 2008-12-09 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7972910B2 (en) 2005-06-03 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of integrated circuit device including thin film transistor
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
JP2012216848A (en) * 2000-09-14 2012-11-08 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic instrument

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361519B2 (en) 1995-02-16 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7375782B2 (en) 1995-02-16 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US8497509B2 (en) 1995-02-16 2013-07-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6998282B1 (en) 1995-02-16 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7425931B1 (en) 1995-02-16 2008-09-16 Semiconductor Energy Laboratory Co. Ltd. Display unit of a helmet or a vehicle or an airplane
US7446843B2 (en) 1995-03-10 2008-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
US7050138B1 (en) 1995-03-10 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device having a driver circuit attached to a display substrate
US8013972B2 (en) 1995-03-10 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
US8547516B2 (en) 1995-03-10 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US7285476B2 (en) 1996-08-27 2007-10-23 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US7094665B2 (en) 1996-08-27 2006-08-22 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
JP2004140381A (en) * 1996-08-27 2004-05-13 Seiko Epson Corp Method of transferring thin film element, thin film element, thin film integrated circuit device, active matrix substrate, and liquid crystal display device
JP2004140383A (en) * 1996-08-27 2004-05-13 Seiko Epson Corp Method of transferring thin film element, thin film element, thin film integrated circuit device, active matrix substrate, and liquid crystal display device
US7468308B2 (en) 1996-08-27 2008-12-23 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
JPH10125930A (en) * 1996-08-27 1998-05-15 Seiko Epson Corp Separation method
JP4619645B2 (en) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 Thin film element transfer method
JP4619644B2 (en) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 Thin film element transfer method
JP4619461B2 (en) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 Thin film device transfer method and device manufacturing method
JPH10125931A (en) * 1996-08-27 1998-05-15 Seiko Epson Corp Transfer of thin film element, thin film element, thin film integrated circuit device, active materix substrate and liquid crystal display device
USRE40601E1 (en) 1996-11-12 2008-12-09 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
JP2012216848A (en) * 2000-09-14 2012-11-08 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic instrument
US8492246B2 (en) 2005-06-03 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing integrated circuit device
US7972910B2 (en) 2005-06-03 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of integrated circuit device including thin film transistor
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8361845B2 (en) 2005-06-30 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007311827A (en) * 2007-08-16 2007-11-29 Semiconductor Energy Lab Co Ltd Peeling method

Also Published As

Publication number Publication date
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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees