JPH04162513A - Developing nozzle for photoresist film - Google Patents

Developing nozzle for photoresist film

Info

Publication number
JPH04162513A
JPH04162513A JP28970590A JP28970590A JPH04162513A JP H04162513 A JPH04162513 A JP H04162513A JP 28970590 A JP28970590 A JP 28970590A JP 28970590 A JP28970590 A JP 28970590A JP H04162513 A JPH04162513 A JP H04162513A
Authority
JP
Japan
Prior art keywords
wafer
photoresist film
developing solution
developing
developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28970590A
Other languages
Japanese (ja)
Inventor
Toshiro Itani
俊郎 井谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP28970590A priority Critical patent/JPH04162513A/en
Publication of JPH04162513A publication Critical patent/JPH04162513A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make the developing rate of a photoresist film inside the face of a wafer nearly uniform and to form a photoresist pattern over the whole region on the face of the wafer with good dimensional uniformity by making two or more holes through which a developing solution is dropped by its own weight before the developing solution is discharged. CONSTITUTION:A semiconductor substrate is coated with a photoresist; said semiconductor substrate is exposed to light through a mask or a reticle on which a prescribed circuit pattern has been drawn; the exposed semiconductor substrate is developed. At this time, a developing nozzle, for a photoresist film, which discharges a developing solution is provided with at least two or more holes 2a through which the developing solution is dropped by its own weight. For example, a nozzle main body 1a is formed to be a funnel shape, and many holes 2a which discharge a developing solution are made. Thereby, since the developing solution is dropped simultaneously to the whole region of a wafer, the time during which the developing solution is spread over the face of the wafer does not differ sharply inside the face of the wafer and the developing rate of a photoresist film does not differ sharply inside the face of the wafer.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、露光されたフォトレジスト膜に現像液を滴下
するフォトレジスト膜現像ノズルに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photoresist film developing nozzle that drops a developer onto an exposed photoresist film.

〔従来の技術〕[Conventional technology]

第3図(a)及び(b)は従来の一例を示すフォトレジ
スト膜現像液ノズルの断面図及び下面図である。従来、
この種のフォトレジスト膜現像ノズルは、フォトレジス
トを半導体基板(以下ウェーハと呼ぶ)上に塗布し、露
光し、この露光されなウェーハに一つの現像液吐出穴よ
り、現像液を吐出する構造となっていた。すなわち、第
3図(a)及び(b)に示すように、先端部に現像液を
吐出する穴2が設けられた筒状のノズル本体1と、この
ノズル本体1の内部に取付けられたフィルタ3とで構成
されていた。
FIGS. 3(a) and 3(b) are a sectional view and a bottom view of a photoresist film developer nozzle showing an example of the conventional technique. Conventionally,
This type of photoresist film developing nozzle has a structure in which a photoresist is coated on a semiconductor substrate (hereinafter referred to as a wafer), exposed to light, and a developer is discharged from a single developer discharge hole onto the unexposed wafer. It had become. That is, as shown in FIGS. 3(a) and 3(b), there is a cylindrical nozzle body 1 having a hole 2 at its tip for discharging the developer, and a filter attached inside the nozzle body 1. It was composed of 3.

このフォトレジスト膜現像ノズルで、ウェーハのフォト
レジスト膜を現像する場合は、このノズルで定量の現像
液を滴下し、現像液がその流動性で半導体基板上の全面
に流れ渡ることで現像を行っていた。
When developing a photoresist film on a wafer using this photoresist film development nozzle, a fixed amount of developer is dropped with this nozzle, and the developer is developed by flowing over the entire surface of the semiconductor substrate with its fluidity. was.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のフォトレジスト膜現像ノズルは、一つの
現像液吐出穴よりウェーハ全面に現像液を吐出する構造
となっているため、現像液がウェーハ面上にいきわたる
時間は、ウェーハ面内で大幅に異なり、フォトレジスト
膜の現像レートがウェーハ面内で大幅に異なることにな
る。この場合、ウェーハ面内で異なった現像レートでフ
ォトレジスト膜を現像するため、ウェーハ面内の現像レ
ートの違いに起因するパターン寸法のウェーハ面内差が
生じるという欠点がある0例えば、1mmラインパター
ンで、約20%の不均一が生ずる。さらに、微細パター
ン形成に対しては、パターン寸法のウェーハ面内差が生
じるというのは致命的である。一方、このノズルの代り
に、スプレーで現像液を吐出する場合が考えられるが、
現像液が霧状になると、現像不十分になるし、吹き付は
圧力が高いと、現像されるパターン形状が崩れるという
問題がある。
The conventional photoresist film development nozzle described above has a structure in which the developer is discharged over the entire surface of the wafer from one developer discharge hole, so the time for the developer to spread over the wafer surface is significantly reduced. Therefore, the development rate of the photoresist film will vary significantly within the wafer plane. In this case, since the photoresist film is developed at different development rates within the wafer plane, there is a drawback that differences in pattern dimensions occur within the wafer plane due to differences in the development rate within the wafer plane.For example, 1 mm line pattern This results in a non-uniformity of approximately 20%. Furthermore, for fine pattern formation, the occurrence of differences in pattern dimensions within the wafer surface is fatal. On the other hand, instead of using this nozzle, it is conceivable that the developer may be discharged by a spray.
If the developer becomes atomized, the development will be insufficient, and if the spraying pressure is high, the developed pattern shape will collapse.

本発明の目的は、かかる欠点を解消するフォトレジスト
膜現像ノズルを提供することである。
An object of the present invention is to provide a photoresist film developing nozzle that eliminates such drawbacks.

〔課題を解決するための手段〕 1、本発明の第1のフォトレジスト膜現像ノズルは、半
導体基板にフォトレジストを塗布し、所定の回路パター
ンを描いたマスクまたはレチクルを通し、前記半導体基
板に露光し、この露光されたこの半導体基板を現像する
際に、現像液を吐出するフォトレジスト膜現像ノズルに
おいて、前記現像液が吐出する面に、自重で前記現像液
が滴下される穴を少くとも2個以上有することを特徴と
している。
[Means for Solving the Problems] 1. The first photoresist film developing nozzle of the present invention applies a photoresist to a semiconductor substrate, passes it through a mask or reticle on which a predetermined circuit pattern is drawn, and applies the photoresist to the semiconductor substrate. When exposing and developing this exposed semiconductor substrate, a photoresist film developing nozzle that discharges a developer has at least a hole on the surface from which the developer is discharged, through which the developer is dripped by its own weight. It is characterized by having two or more.

2、本発明の第2のフォトレジスト膜現像ノズルは、中
央部から周辺部に行くに従って、前記穴が大きくなって
いることを特徴としている。
2. The second photoresist film developing nozzle of the present invention is characterized in that the hole becomes larger from the center toward the periphery.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図(a)及び(b)は本発明の一実施例を示すフォ
トレジスト膜現像ノズルの断面図及び下面図である。こ
のフォトレジスト膜現像ノズルは、同図に示すように、
ノズル本体1aのじょうろ状とし、現像液を吐出する穴
2aを多数設けたことである。このように、吐出側面に
現像液の自重で滴下する穴2aを設けることによって、
フォトレジスト膜を現像した場合、現像液がウェーハ全
域に同時に滴下され、ウェーハ全面にいきわたらせるこ
とができるため、第3図の従来のフォトレジスト膜現像
ノズルを用いた場合のように、現像液がウェーハ面上に
い1きわたる時間がウェーハ面内で大幅に異なるという
ことはなくなり、フォトレジスト膜の現像レートがウェ
ーハ面内で大幅に異なるということもなくなる。その結
果、ウェーハ面内の現像レートはほぼ均一になりフォト
レジストパターンをウェーハ面内全域にわたって、約1
0%内の均一性で形成することが出来な。
FIGS. 1(a) and 1(b) are a sectional view and a bottom view of a photoresist film developing nozzle showing an embodiment of the present invention. As shown in the same figure, this photoresist film development nozzle is
The nozzle body 1a is shaped like a watering can, and a large number of holes 2a are provided for discharging the developer. In this way, by providing the hole 2a on the discharge side through which the developer drips under its own weight,
When developing a photoresist film, the developer is simultaneously dropped onto the entire wafer and can be spread over the entire surface of the wafer. The time it takes for the photoresist film to last on the wafer surface will no longer vary greatly within the wafer surface, and the development rate of the photoresist film will no longer vary significantly within the wafer surface. As a result, the development rate within the wafer surface becomes almost uniform, and the photoresist pattern is spread over the entire wafer surface at a rate of about 10%.
It cannot be formed with uniformity within 0%.

第2図(a)及び(b)は本発明の他の実施例を示すフ
ォトレジスト膜現像ノズルの断面図及び下面図である。
FIGS. 2(a) and 2(b) are a sectional view and a bottom view of a photoresist film developing nozzle showing another embodiment of the present invention.

このフォトレジスト膜現像ノズルは、同図に示すように
、穴2b〜2gのそれぞれをその大きさが中央部では小
さく、周辺部では大きくなっており、現像液滴下量が比
較的多く、必要なウェーハ周辺部により多くの現像液を
吐出できる構造となっている。そのため、大口径ウェー
ハ上のフォトレジスト膜を現像する際にも、現像液がウ
ェーハ面上にいきわたる時間が、ウェーハ面内でより早
くなり、その結果、前述の実施例と比べ、ウェーハ面内
の現像レートはより均一になり、ウェーハの光が大型化
してもフォトレジストパターンを面内全域にわたって、
寸法均一性よく形成することができる利点がある。
As shown in the figure, this photoresist film developing nozzle has holes 2b to 2g each having a smaller size at the center and a larger size at the periphery, so that a relatively large amount of developer can be dropped and the required amount can be reduced. The structure allows more developer to be discharged around the wafer. Therefore, when developing a photoresist film on a large-diameter wafer, the time for the developer to spread over the wafer surface becomes faster, and as a result, compared to the above-mentioned example, The development rate is now more uniform, and even with larger wafers, the photoresist pattern can be spread across the entire surface of the wafer.
It has the advantage that it can be formed with good dimensional uniformity.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、現像液吐出穴を少なくと
も2個以上設けることにより、現像液をウェーハ全域に
ほとんど同時にいきわたらせることができる。その結果
、ウェーハ面内のフォトレジスト膜現像レートはほぼ均
一になり、フォトレジストパターンをウェーハ面内全域
にわたって、寸法均一性よく形成することができる0丈
なフォトレジスト膜現像ノズルが得られるという効果が
ある。
As explained above, in the present invention, by providing at least two or more developer discharge holes, the developer can be spread over the entire wafer almost simultaneously. As a result, the photoresist film development rate within the wafer surface becomes almost uniform, and a zero-length photoresist film development nozzle that can form a photoresist pattern with good dimensional uniformity over the entire wafer surface is obtained. There is.

【図面の簡単な説明】[Brief explanation of drawings]

第1図<a)及び(b)は本発明の一実施例を示すフォ
トレジスト膜現像ノズルの断面図及び下面図、第2図(
a>及び(b)は本発明の他の実施例を示すフォトレジ
スト膜現像ノズルの断面図及び下面図、第3図(a)及
び(b)は従来の一例を示すフォトレジスト膜現像ノズ
ルの断面図及び下面図である。 1、la、lb−・・ノズル本体、2.2a、2b、2
c、2d、2e、2f、2g−穴、3゜3a・・・フィ
ルタ。
Figures 1(a) and (b) are a sectional view and bottom view of a photoresist film developing nozzle showing one embodiment of the present invention, and Figure 2(a) and (b) are
3(a) and (b) are cross-sectional views and bottom views of a photoresist film developing nozzle showing another embodiment of the present invention, and FIGS. 3(a) and (b) are views of a photoresist film developing nozzle showing a conventional example They are a sectional view and a bottom view. 1, la, lb--nozzle body, 2.2a, 2b, 2
c, 2d, 2e, 2f, 2g-hole, 3°3a...filter.

Claims (1)

【特許請求の範囲】 1、半導体基板にフォトレジストを塗布し、所定の回路
パターンを描いたマスクまたはレチクルを通し、前記半
導体基板に露光し、この露光されたこの半導体基板を現
像する際に、現像液を吐出するフォトレジスト膜現像ノ
ズルにおいて、前記現像液が吐出する面に、自重で前記
現像液が滴下される穴を少くとも2個以上有することを
特徴とするフォトレジスト膜現像ノズル。 2、中央部から周辺部に行くに従って、前記穴が大きく
なっていることを特徴とする請求項1記載のフォトレジ
スト膜現像ノズル。
[Claims] 1. When applying a photoresist to a semiconductor substrate, exposing the semiconductor substrate to light through a mask or reticle with a predetermined circuit pattern drawn thereon, and developing the exposed semiconductor substrate, A photoresist film developing nozzle for discharging a developer, characterized in that the surface from which the developer is discharged has at least two or more holes through which the developer is dropped by its own weight. 2. The photoresist film developing nozzle according to claim 1, wherein the hole becomes larger from the center toward the periphery.
JP28970590A 1990-10-25 1990-10-25 Developing nozzle for photoresist film Pending JPH04162513A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28970590A JPH04162513A (en) 1990-10-25 1990-10-25 Developing nozzle for photoresist film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28970590A JPH04162513A (en) 1990-10-25 1990-10-25 Developing nozzle for photoresist film

Publications (1)

Publication Number Publication Date
JPH04162513A true JPH04162513A (en) 1992-06-08

Family

ID=17746687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28970590A Pending JPH04162513A (en) 1990-10-25 1990-10-25 Developing nozzle for photoresist film

Country Status (1)

Country Link
JP (1) JPH04162513A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100441709B1 (en) * 2001-12-21 2004-07-27 동부전자 주식회사 A jet device for providing developer in the lithography process
JP2015038926A (en) * 2013-08-19 2015-02-26 凸版印刷株式会社 Chemical processing apparatus of substrate and chemical processing method of substrate using the same
CN105487353A (en) * 2014-10-13 2016-04-13 沈阳芯源微电子设备有限公司 Liquid coating device
KR102226337B1 (en) * 2020-09-21 2021-03-09 이정현 Fixing Apparatus Used for Manufacturing Injection Nozzel and Injection Nozzel Manufactured thereby

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100441709B1 (en) * 2001-12-21 2004-07-27 동부전자 주식회사 A jet device for providing developer in the lithography process
JP2015038926A (en) * 2013-08-19 2015-02-26 凸版印刷株式会社 Chemical processing apparatus of substrate and chemical processing method of substrate using the same
CN105487353A (en) * 2014-10-13 2016-04-13 沈阳芯源微电子设备有限公司 Liquid coating device
KR102226337B1 (en) * 2020-09-21 2021-03-09 이정현 Fixing Apparatus Used for Manufacturing Injection Nozzel and Injection Nozzel Manufactured thereby
KR20220039528A (en) * 2020-09-21 2022-03-29 이정현 Injection Nozzel

Similar Documents

Publication Publication Date Title
JPH05304072A (en) Manufacture of semiconductor device
JPS623971B2 (en)
JPH04162513A (en) Developing nozzle for photoresist film
JPH03210730A (en) Manufacture of fluorescent film of color cathode-ray tube
US6592939B1 (en) System for and method of using developer as a solvent to spread photoresist faster and reduce photoresist consumption
JP2874155B2 (en) Resist development equipment
JPS5941300B2 (en) Development processing equipment
JPS60140350A (en) Developing device
JPS5846643A (en) Treating method for wafer
JPH09244258A (en) Method for developing resist
US6403500B1 (en) Cross-shaped resist dispensing system and method
JPH01292829A (en) Manufacture of semiconductor device
JP3022896B2 (en) Manufacturing method of exposure mask
JPS61188934A (en) Method for preventing change of focusing point of projection aligner in photo etching
JPS6347924A (en) Manufacture of semiconductor device
US20210349393A1 (en) Method for improving uniformity of photoresist development
JPH03256321A (en) Resist film forming apparatus
JPH05315243A (en) Resist film and its formation method
KR0172269B1 (en) Spray nozzle assembly of processing liquid
JPH07135136A (en) Manufacture of semiconductor device
JPS61259522A (en) Developing device
JPS5916332A (en) Manufacture of semiconductor device
JPS569742A (en) Developing method of photosensitive resin
JPS58194337A (en) Preparation of semiconductor device
JPS59104643A (en) Photoresist developing method