JPS5846643A - Treating method for wafer - Google Patents

Abstract

PURPOSE:To improve the uniformity of accuracy on processing in the wafer by mounting a plurality of nozzles spraying a developing liquid or an etching liquid and making the conditions of the treatment of these nozzles independent. CONSTITUTION:In the development of a resist film or the etching treatment of the semiconductor wafer, not only the nozzle 3 to the central section of the wafer 1 but also the nozzles 4 to a peripheral section are set up, and the conditions of the treatment of each nozzle are controlled independently while turning the wafer by means of a wafer chuck 7, thus remarkably improving the uniformity of accuracy on processing in the wafer. An automatic end point detector 5, which consists of a light emitting section 51 and a light receiving section 52 and measures the change of the reflectivity of the section to be treated, is mounted to the central section while a similar automatic end point detector 6 is set up to the peripheral section, the conditions of the treatment of the nozzles corresponding to each are automatically controlled, and uniformity can further be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in wafer processing methods in the manufacturing process of semiconductor devices and the like.

Integrated circuits are increasingly required to be highly integrated, and the pattern 7 is becoming increasingly finer. Conventionally, in the 4-press plate making technology, which has been widely used as a mass production technology, a photoresist or an electron beam resist is exposed to fog light and then developed to form a wafer, such as a semiconductor wafer, as shown in the cross-sectional view of Figure 1. (1) forming a resist film (2) having a predetermined pattern thereon;
Using this resist film (2) as a mask, the surface of the wafer (11) is etched using chemicals or gas plasma to form a vertical pattern on the wafer (1) as shown in the cross-sectional view of Figure 2. In the developing and etching processes, about 25 wafers were processed in one batch, but since this method had poor processing precision between L wafers, recently the wafers were processed one by one. End point detection is also changing to a method that is automatically performed based on changes in the emission spectrum, transmittance, reflectance, etc. of infrared light, visible light, ultraviolet light, etc. If such a method is used, uniformity between wafers can be improved. While this is certainly an improvement, the within-wafer uniformity is not significantly improved compared to conventional methods.

The object of this invention is to provide a wafer processing method that can improve the uniformity of processing accuracy within the wafer by dividing an L1 wafer into a plurality of regions and independently controlling the processing conditions for each region. be.

The present invention will be explained below based on examples.

Normally, when the entire surface of a wafer is processed under the same conditions, the progress of processing differs between the periphery and the center of the wafer, which reduces the uniformity of processing accuracy within the wafer.

Therefore, in the method of the embodiment, as shown in the cross-sectional view of FIG. By independently controlling each processing condition while rotating the wafer 11 with a rotating wafer chuck ( ), it was possible to significantly improve the uniformity of processing accuracy within the wafer. Furthermore, a light emitting part (51) and a light receiving part (52
) is provided at the center of the wafer il+, and an automatic end point detector +a+ for measuring changes in the reflectance of the processed area is provided at the center of the wafer il+. By installing a detector (6) around the wafer [11] and automatically controlling the processing conditions of the corresponding nozzle, the uniformity of processing accuracy within the wafer is further improved. It became possible.

In the above embodiments, development of a resist film or etching of a semiconductor wafer is taken up as the wafer processing.
We have described the case where a plurality of nozzles for spraying a developing solution or an etching solution are provided for one wafer, and the processing conditions by those nozzles are independently controlled to improve the uniformity of processing accuracy within the wafer. As a processing means,
The method is not limited to spraying using a nozzle, but may be any method that colors a plurality of areas within the wafer according to separate processing conditions. For example, in a film forming process, instead of forming a film under the same conditions over the entire wafer, the wafer is divided into multiple regions, and the film thickness of each region is detected by a film thickness measuring device during the film forming process, and then the film forming conditions are changed. In the case of plasma etching, for example, if the uniformity of film thickness within a wafer can be improved by controlling
By providing multiple gas inlet ports facing each other in multiple regions of the wafer, the gas flow rate to these multiple regions can be controlled independently, or by providing multiple electrodes corresponding to each of the multiple regions. By independently controlling the force or discharge time of RF' application to these multiple regions, it is possible to improve the uniformity of processing accuracy within the wafer.

Furthermore, the end point detector is not limited to a detector that detects changes in reflectance, but may be one that can separately detect the state a that changes due to processing at -a number of processing locations, such as a laser beam detector. It may also be an interferometric detector.

that's all? As described above, in the wafer processing method according to the present invention, the uniformity of processing within the wafer can be improved by dividing the wafer into a plurality of regions and independently controlling the processing conditions for each region. ,

[Brief explanation of the drawing]

1 and 2 are cross-sectional views for explaining a fine pattern forming method using conventional photolithography technology, and FIG. 3 is a cross-sectional view for explaining an embodiment of a wafer processing method according to the present invention. . In the figure, +11 is Unino 1, (2) is Resist 1 film,
(3). (4) is a nozzle, (5) and (6) are automatic end point detection ((7)
) is a wafer chuck. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Tsutomu Kuzuno - (1 other person) Figure 1 Figure 2 Figure 3

Claims (1)

[Claims] ill A wafer processing method characterized by improving the uniformity of processing within a wafer by dividing a wafer into a plurality of regions and independently controlling processing conditions for each region. (2) The wafer processing method according to claim i11, characterized in that the processing conditions for each of the plurality of regions of the wafer are independently controlled by independently detecting the processing condition of each of the plurality of regions during all processing. .