JPH04162460A - Lead frame for semiconductor device - Google Patents
Lead frame for semiconductor deviceInfo
- Publication number
- JPH04162460A JPH04162460A JP28648390A JP28648390A JPH04162460A JP H04162460 A JPH04162460 A JP H04162460A JP 28648390 A JP28648390 A JP 28648390A JP 28648390 A JP28648390 A JP 28648390A JP H04162460 A JPH04162460 A JP H04162460A
- Authority
- JP
- Japan
- Prior art keywords
- plating layer
- plating
- lead frame
- alloy
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000007747 plating Methods 0.000 claims abstract description 48
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- 229910001096 P alloy Inorganic materials 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910018106 Ni—C Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 17
- 230000004907 flux Effects 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000005476 soldering Methods 0.000 abstract description 9
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 206010007269 Carcinogenicity Diseases 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000007670 carcinogenicity Effects 0.000 description 1
- 231100000260 carcinogenicity Toxicity 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 235000003891 ferrous sulphate Nutrition 0.000 description 1
- 239000011790 ferrous sulphate Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体装置用リードフレームのめっき構造に
係り、特に旧めっきのはんだぬれ性を改善２したリード
フレームに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plating structure of a lead frame for a semiconductor device, and particularly to a lead frame in which the solderability of old plating has been improved.
［従来の技術］
半導体用リードフレームのめっき膜に要求される機能は
、ワイヤボンディング性、ダイボンデインク性等にすぐ
れていることは勿論であるが、特に、アウターリートピ
ンのめっき膜について、基板実装上の点からすぐれたは
んだぬれ性が求められる。[Prior Art] The functions required of plating films for semiconductor lead frames include excellent wire bonding properties, die bonding properties, etc. Excellent solderability is required from a mounting point of view.
特に、高出力用ＩＣでは組立時および使用時の熱衝撃に
耐えるため、下地に旧のめっき層を設け、素子搭載部に
のみに銀めっきを設けた部分めっきリードフレームが使
用されており、アウターリードピンは、旧めっきで被覆
されている。In particular, in order to withstand thermal shock during assembly and use, high-output ICs use partially plated lead frames with an old plating layer on the base and silver plating only on the element mounting area. The lead pins are covered with old plating.
Ｎｉは耐食性酸化被膜を形成し易いため、はんたぬれ性
を保証するには、フラックスの使用が必要である。Since Ni tends to form a corrosion-resistant oxide film, it is necessary to use flux to ensure solder wettability.
したがって、これまでは、リードピンに溶融はんだを設
けた後、残留フラックスの除去を目的として、フロン系
溶剤またはトリクロルエチレンに代表される塩素系有機
溶剤で後洗浄を行っていた。Therefore, in the past, after applying molten solder to lead pins, post-cleaning was performed with a fluorocarbon solvent or a chlorinated organic solvent such as trichlorethylene in order to remove residual flux.
「発明が解決しようとする課題］
ところが、近年、地球的規模の環境問題等から、前記の
フロンおよび有機溶剤の使用については、禁止もしくは
制限される傾向にあり、ＩＣなと電子部品の後洗浄に対
しても厳しい状況になりつつある。``Problem to be solved by the invention'' However, in recent years, due to global environmental problems, the use of fluorocarbons and organic solvents has tended to be prohibited or restricted, and the use of fluorocarbons and organic solvents has become increasingly difficult to clean after cleaning ICs and other electronic components. The situation is becoming increasingly difficult.
したかって、はんだ付けには非塩素系のフラックスを使
用するか、あるいはフラックスなしてもはんだぬれ性の
よいＮｉめっき方法を開発するなどの手段をとらなけれ
ばならない。Therefore, it is necessary to use non-chlorine flux for soldering, or to develop a Ni plating method that provides good solderability even without flux.
Ｎｉめっきのはんだぬれ性を改善するためには、めっき
の光沢化が効果があることは経験的に認められているが
、現状では、光沢Ｎｉめっきの場合は、はんだ付温度が
高いため、より低温のはんだ付温度で、フラックスなし
の状態下でも接合可能なＮｉめっき手段の開発が求めら
れていた。It has been empirically recognized that making the plating glossier is effective in improving the solderability of Ni plating, but currently, bright Ni plating requires higher soldering temperatures, so There was a need to develop a Ni plating method that would allow bonding at low soldering temperatures and without flux.
本発明の目的は、光沢Ｎｉめっき層を設けた基板上に、
フラックスなしでもより低温化てはんた付けが可能な半
導体装置用リードフレーム基体を提供することである。The purpose of the present invention is to provide a substrate with a bright Ni plating layer,
It is an object of the present invention to provide a lead frame base for a semiconductor device which can be soldered at a lower temperature even without flux.
［課題を解決するための手段］ ゛
上記課題を解決するための本発明に係る半導体装置用リ
ードフレームの構成は、銅または銅合金からなるリード
フレームの基体上に、光沢旧めめっき層を設け、これに
積層してＮｉ−Ｃｏ−Ｐ合金めっき層を設けるようにし
たことである。[Means for Solving the Problems] ゛The structure of the lead frame for a semiconductor device according to the present invention for solving the above problems includes providing a bright old plating layer on the base of the lead frame made of copper or copper alloy. , a Ni-Co-P alloy plating layer is laminated thereon.
［作用コ
半導体装置用基板（ＣｕまたはＣｕ合金）上に設けるＮ
ｉめっきの厚さは、基板材料からのＣｕの拡散を抑え、
ワイヤボンディング性を確保するために２μｍ以上必要
である。[Operation] N provided on the semiconductor device substrate (Cu or Cu alloy)
The thickness of i-plating suppresses the diffusion of Cu from the substrate material,
A thickness of 2 μm or more is required to ensure wire bondability.
本発明によるＮｉ−Ｃｏ−Ｐめっき層、光沢Ｎｉめつき
層を下地として薄く設け、基板Ｃｕの表面に光沢Ｎｉ／
Ｎｉ −Ｃｏ −Ｐの２層のめっきを積層する。A Ni-Co-P plating layer according to the present invention and a glossy Ni plating layer are provided thinly as a base, and the surface of the substrate Cu is coated with a glossy Ni/coated layer.
Two layers of Ni-Co-P plating are laminated.
たたし、Ｎｉ−Ｃｏ−Ｐめつき層は、非常に硬く脆い性
質のため、単独で厚付けすることは、加工上は不適当て
あり、約０．２０μｍの厚さとする。However, since the Ni-Co-P plating layer is very hard and brittle, it would be inappropriate for processing to thicken it alone, so the thickness is set to about 0.20 μm.
本発明で採用したＮｉ−Ｃｏ−Ｐめっき層の１部を採取
して、組成分析を行った結果、ＣＯは、１〜２０ｗｔ％
程度、Ｐは、３〜１５ ｗ ｔ％程度含有した場合には
、はんだぬれ性は最も良好であることがわかった。A portion of the Ni-Co-P plating layer employed in the present invention was sampled and analyzed for its composition. As a result, CO was 1 to 20 wt%.
It was found that the solder wettability was the best when P was contained in an amount of about 3 to 15 wt%.
［実施例コ
以下本発明の一実施例を試験結果にもとづいて説明する
。[Example 1] An example of the present invention will be described below based on test results.
まず、基板となる銅合金寸法、５０ｍｍＸ２０ｍｍＸ０
．２５ｍｍの試料を脱脂および酸洗処理により、清浄化
し、これら試料に光沢旧めっきを約３μｍ厚さに設けた
。光沢ＮＩめっき液の組成はつぎの通りである。First, the dimensions of the copper alloy that will become the substrate are 50mm x 20mm x 0.
．． 25 mm samples were cleaned by degreasing and pickling, and a bright old plating was applied to the samples to a thickness of about 3 μm. The composition of the bright NI plating solution is as follows.
Ｎｉ５０ ・６Ｈ２０・・・・・・２４０ ｇ ／
１Ｎｉｃｌ ・６Ｈ２０・・・・・・４０ｇ／１ＨＢ
Ｏ３・・・・・・４０ ｇ／ １
荏原ニーシライト＃６１・・・５ ｍｌ ／ １同
上 ＃ ６ ３ ・＝ １ ０
ｍｌ ／ １ついで、上記試料の上に旧−Ｃｏ −Ｐ
合金めつきを０．１５μｍ厚さに設けた。めっき液の組
成はつぎの通りである。Ni50 ・6H20...240 g/
1 Nicl ・6H20...40g/1HB
O3...40 g/1 Ebara Nishilite #61...5 ml/1 same
Top #6 3 ・= 1 0
ml/1 then old-Co-P on top of the above sample
Alloy plating was provided to a thickness of 0.15 μm. The composition of the plating solution is as follows.
Ｎｉ５０ ・６Ｈ２０・・・１６０ｇ／１Ｎｉｃｌ
・６Ｈ２０・・・４０ ｇ／ １Ｈ３ＰＯ３・・・６
ｇ／Ｉ
Ｃ’ｏ Ｓ Ｏ”７ Ｈ２０−０−２０’ｇ ／ １図
は本発明の実施例のリードフレームの部分断面図である
。図において、１は、銅合金基体、２は、光沢Ｎｉめっ
き、３は、Ｎｉ−Ｐｅ−Ｐ合金めつきである。Ni50 ・6H20...160g/1Nicl
・6H20...40 g/ 1H3PO3...6
g/I C'o SO"7 H20-0-20'g/1 Figure is a partial sectional view of a lead frame according to an embodiment of the present invention. In the figure, 1 is a copper alloy substrate, 2 is a glossy Ni plating, 3 is Ni-Pe-P alloy plating.
以下に、はんだ付は性試験について説明する。Below, the soldering test will be explained.
まず、はんだ浴槽（Ｓｎ６２％、Ｐｂ３８％共晶）を準
備し、上記のようにして調整した２層めっきを施した試
料（フラックスは使用しない）をサンプルクリップに挟
み、自動昇降装置を用いて、所定の試験温度に加熱した
はんだを浴槽中に１０秒間浸漬し、引上げ、各浴槽毎に
、各試料のはんだぬれ状態を目視観察した。First, prepare a solder bath (62% Sn, 38% Pb eutectic), hold the two-layer plating sample prepared as described above (no flux is used) between sample clips, and use an automatic lifting device to The solder heated to a predetermined test temperature was immersed in a bathtub for 10 seconds, pulled out, and the solder wetting state of each sample was visually observed in each bathtub.
浸漬温度（はんだ浴温）は、夫々２４０．２６０．２８
０．３００および３２０°Ｃの５温度である。The immersion temperature (solder bath temperature) is 240.260.28, respectively.
There are 5 temperatures: 0.300 and 320°C.
はんだぬれ状態の目視観察の判断基準の以下の通りであ
る。The criteria for visual observation of the solder wet state are as follows.
○印：全表面が均一に完全にぬれたもの△印：わずかに
めっき面が露出したもの×印：１０％以上の面積ではん
たがはがれ、下地面がはっきり露出したもの
なお、比較のために、Ｎｊ＝Ｃｏ−Ｐめつき層を設けな
い光沢Ｎｉめっき層のみの試料についても同様な条件で
試験し評価した。 ・
つぎに、上記試料は、実際の組立工程で熱履歴をうける
ので、上記試料に１５０°Ｃ×３０分の加熱処理を施し
た後のはんだぬれ性試験を行った。○ mark: The entire surface is completely and uniformly wetted △ mark: The plated surface is slightly exposed × mark: The solder has peeled off over 10% of the area and the underlying surface is clearly exposed. For comparison purposes only. Furthermore, a sample with only a bright Ni plating layer without a Nj=Co-P plating layer was also tested and evaluated under the same conditions. -Next, since the above sample undergoes thermal history during the actual assembly process, the above sample was subjected to a heat treatment of 150°C for 30 minutes and then subjected to a solderability test.
浸漬試験条件は、すべて前記の加熱処理前のものと同様
である。All immersion test conditions were the same as those before the heat treatment described above.
浸漬試験は、各試験に対して５回以上実施した。The immersion test was conducted five or more times for each test.
以上述へるように、Ｎｉ／ Ｎｉ−Ｃｏ −Ｐの２層め
っきを設けた試料を（１）加熱前および（２）加熱処理
（１５０°Ｃ×３０分）後について、５ｎ−Ｐｂ共品は
んだ浴槽中に、試験温度２４０〜３２０℃の５段階の温
度で浸漬試験後のはんたぬれ性の観察結果を下記の表に
示す。As mentioned above, the samples with two-layer plating of Ni/Ni-Co-P were tested (1) before heating and (2) after heat treatment (150°C x 30 minutes) with 5n-Pb. The table below shows the observation results of solder wettability after an immersion test in a solder bath at five test temperatures ranging from 240 to 320°C.
上記の表からつぎのことかわかる。The following can be seen from the table above.
（１）同上条件で、めっき液にＣＯ３Ｏ４・７Ｈ２０を
１ｇ／ｌ添加するとはんだぬれ性は加熱エージング後も
著しく改善されることがわかる。(1) Under the same conditions as above, it can be seen that when 1 g/l of CO3O4.7H20 is added to the plating solution, the solder wettability is significantly improved even after heat aging.
（２） 同上条件で、めっき液にＣＯ３Ｏ４・７Ｈ２
０はＩｇ／１以上でよいが、はんたぬれ性安定のために
は５ｇ／１以上がよくコストの点を含めると５〜２０
ｇ ／ １の範囲が最も効果的である。(2) Under the same conditions as above, the plating solution contains CO3O4 and 7H2.
0 may be Ig/1 or more, but in order to stabilize solder wettability, 5g/1 or more is better, and if cost is included, 5 to 20
The g/1 range is the most effective.
以」二の結果から、Ｎｉ−Ｃｏ−Ｐめっき層を設けるこ
とにより、フラックスなしでも、２８０°Ｃのはんだ温
度で、はんだぬれ性を保つことができる。From the above two results, by providing the Ni-Co-P plating layer, solder wettability can be maintained at a soldering temperature of 280°C even without flux.
特にＮｊ−Ｃｏ−Ｐめっき層を設ける時に、めっき液中
への、Ｃｏ５０ ・７Ｈ２０の（硫酸第１鉄）の添加量
によって、その効果を高めることができる。すなわち、
Ｃｏ５０ ・７Ｈ２０の添加量を５〜２０ ｇ ／
１にした場合の効果が最高で、２６０℃でもはんだぬれ
性は良好であることがわかった。In particular, when providing an Nj-Co-P plating layer, the effect can be enhanced by changing the amount of Co50.7H20 (ferrous sulfate) added to the plating solution. That is,
The amount of Co50/7H20 added is 5 to 20 g/
It was found that the effect was the highest when the temperature was set to 1, and the solder wettability was good even at 260°C.
［発明の効果］
本発明により半導体装置用リードフレーム基板に光沢旧
／Ｎｉ−Ｃｏ−Ｐの２層めっきを設け、フラックスなし
で、より低温ではんた付けが可能になるため、従来のよ
うに、残留フラックス除去のための有機溶剤による後洗
浄処理作業を省くことができる。このことは、
（１） フロン等の利料費および人工費が節減できる
ことは言うまでもなく、
（２）フロンのよる環境破壊、塩素系溶剤による発癌性
の問題を回避できるという大きな効果がある。また、
（３） はんだ付は時にフラックスを使用する必要が
なくなり、この場合残留フラックスによる電子部品の腐
食による故障を起こすことがない。[Effects of the Invention] According to the present invention, a two-layer plating of gloss old/Ni-Co-P is provided on a lead frame substrate for a semiconductor device, and soldering can be performed at a lower temperature without flux, which makes it possible to solder at a lower temperature than before. , the post-cleaning process using an organic solvent for removing residual flux can be omitted. This has the great effect of (1) saving interest costs and labor costs for fluorocarbons, and (2) avoiding environmental damage caused by fluorocarbons and carcinogenicity caused by chlorinated solvents. In addition, (3) soldering sometimes eliminates the need to use flux, and in this case, there is no possibility of failure due to corrosion of electronic components due to residual flux.
また、より低温度ではんた伺は作業が可能となり、他の
電子部品に熱的な損傷を与えなくなるので基板の品質向
上に有効である。In addition, soldering can be performed at a lower temperature, which prevents thermal damage to other electronic components, which is effective in improving the quality of the board.
−１〇 −
図は、本発明の半導体装置用リードフレームの一実施例
の部分断面図である。
１：銅合金基体、
２：光沢Ｎｉめっき層、
３：Ｎｉ−Ｃｏ−Ｐ合金めっき層。
＝ １１−
１：銅合金基体
２：光沢Ｎｉめっき層
３：Ｎｉ＝Ｇｏ−Ｐ合金めっき層-10- Figure is a partial cross-sectional view of an embodiment of a lead frame for a semiconductor device according to the present invention. 1: Copper alloy substrate, 2: Bright Ni plating layer, 3: Ni-Co-P alloy plating layer. = 11- 1: Copper alloy base 2: Bright Ni plating layer 3: Ni=Go-P alloy plating layer
Claims (1)
光沢ニッケルめっき層を設け、これに積層してＮｉ−Ｃ
ｏ−Ｐ合金めっき層を設けたことを特徴とする半導体装
置用リードフレーム。1. On a lead frame base made of copper or copper alloy,
A bright nickel plating layer is provided, and Ni-C is laminated on this.
A lead frame for a semiconductor device, characterized in that an o-P alloy plating layer is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28648390A JPH04162460A (en) | 1990-10-24 | 1990-10-24 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28648390A JPH04162460A (en) | 1990-10-24 | 1990-10-24 | Lead frame for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04162460A true JPH04162460A (en) | 1992-06-05 |
Family
ID=17704984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28648390A Pending JPH04162460A (en) | 1990-10-24 | 1990-10-24 | Lead frame for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04162460A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110608A (en) * | 1996-12-10 | 2000-08-29 | The Furukawa Electric Co., Ltd. | Lead material for electronic part, lead and semiconductor device using the same |
| WO2006059578A1 (en) * | 2004-12-03 | 2006-06-08 | Murata Manufacturing Co., Ltd. | Electric contact part, coaxial connector, and electric circuit device using the part and the connector |
-
1990
- 1990-10-24 JP JP28648390A patent/JPH04162460A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110608A (en) * | 1996-12-10 | 2000-08-29 | The Furukawa Electric Co., Ltd. | Lead material for electronic part, lead and semiconductor device using the same |
| USRE38588E1 (en) * | 1996-12-10 | 2004-09-14 | The Furukawa Electric Co., Ltd. | Lead material for electronic part, lead and semiconductor device using the same |
| WO2006059578A1 (en) * | 2004-12-03 | 2006-06-08 | Murata Manufacturing Co., Ltd. | Electric contact part, coaxial connector, and electric circuit device using the part and the connector |
| US7632112B2 (en) | 2004-12-03 | 2009-12-15 | Murata Manufacturing Co., Ltd. | Electrical contact component, coaxial connector, and electrical circuit device including the same |
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