JPH04154965A - Formation of thin film on substrate - Google Patents
Formation of thin film on substrateInfo
- Publication number
- JPH04154965A JPH04154965A JP27722090A JP27722090A JPH04154965A JP H04154965 A JPH04154965 A JP H04154965A JP 27722090 A JP27722090 A JP 27722090A JP 27722090 A JP27722090 A JP 27722090A JP H04154965 A JPH04154965 A JP H04154965A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- sputtering
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 3
- 235000013405 beer Nutrition 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、Ｓｉ、ＡＡ２０３等の基板へ薄膜を形成する
方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of forming a thin film on a substrate such as Si or AA203.
（従来の技術）
近年、半導体をはじめ各種の技術分野で、スパッタリン
グ法による薄膜形成が行われている。(Prior Art) In recent years, thin films have been formed by sputtering in various technical fields including semiconductors.
スパッタリング法には、直流スパッタリング、直流マグ
ネトロンスパッタリング、高周波スパッタリング等の方
法があり、直流スパッタリングや直流マグネトロンスパ
ッタリングでは付着速度が大きく、高周波スパッタリン
クでは絶縁物の薄膜も形成できるという利点がある。Sputtering methods include direct current sputtering, direct current magnetron sputtering, and high frequency sputtering. Direct current sputtering and direct current magnetron sputtering have a high deposition rate, and high frequency sputtering has the advantage of being able to form a thin film of an insulator.
金属薄膜の形成では付着速度が大きいということで直流
スパッタリング法が主に行われてきた。Direct current sputtering has been mainly used to form metal thin films because of its high deposition rate.
また付着強度を増す為に、下地としてＴｉ、Ｃｒ、Ｐｄ
等の接着層を設けることがある。In addition, in order to increase the adhesion strength, Ti, Cr, and Pd are used as the base material.
An adhesive layer such as the following may be provided.
（発明が解決しようとする課題）
ところで、Ａｊ２ｚＯ３基板にｐｔ膜を付着させる場合
、直流スパッタリング法では膜付着強度が弱い。またＳ
ｉ基板や酸化Ｓｉ基板にＣｒ／Ｐｔ／Ａｕの多層膜を直
流スパッタリング法で形成したものでも膜付着強度が弱
い場合かあり、膜付着強度が安定しない。(Problems to be Solved by the Invention) By the way, when attaching a PT film to an Aj2zO3 substrate, the film adhesion strength is weak when using the DC sputtering method. Also S
Even when a multilayer film of Cr/Pt/Au is formed on an i-substrate or an oxidized Si substrate by direct current sputtering, the film adhesion strength may be weak and the film adhesion strength is not stable.
そこで本発明は、基板との膜付着強度を高めることので
きる薄膜形成方法を提供しようとするものである。Therefore, the present invention aims to provide a method for forming a thin film that can increase the strength of film adhesion to a substrate.
（課題を解決するための手段）
上記課題を解決するための本発明の基板への薄膜形成方
法は、Ｓｉ、Ａ１２（ｈ等の基板へ薄膜を形成するに於
いて、基板の洗浄、イオンエツチングを行った後、第１
層目を高周波スパッタリング法により薄膜を形成し、第
２層目以降を直流スパッタリング法により薄膜を形成す
ることを特徴とするものである。(Means for Solving the Problems) The method for forming a thin film on a substrate of the present invention for solving the above problems includes cleaning the substrate, ion etching, etc. After performing the first
The method is characterized in that the first layer is formed into a thin film by high frequency sputtering, and the second and subsequent layers are formed by direct current sputtering.
（作用）
上記のように本発明の基板への薄膜形成方法は、第１層
目を高周波スパッタリング法により薄膜を形成するので
、直流スパッタリング法に比べ基板側に僅かなバイアス
がかかり、−膜付着した膜がイオンボンバードされる為
、付着の弱い粒子、ガス分子等が逆スパツタされ、付着
強度の高い薄膜が形成される。尚、高周波スパッタリン
グ法により薄膜を形成する際、低パワー（ＲＦ ５００
Ｗ以下）で行うと、膜のひずみが緩和され、付着力が高
まるので、好ましい。(Function) As described above, in the method of forming a thin film on a substrate of the present invention, the first layer is formed by high frequency sputtering, so a slight bias is applied to the substrate side compared to the DC sputtering method, which reduces film adhesion. Since the film is ion-bombarded, particles and gas molecules with weak adhesion are reverse sputtered, forming a thin film with high adhesion strength. In addition, when forming a thin film by high frequency sputtering method, low power (RF 500
W or less) is preferable because the strain on the film is relaxed and the adhesion is increased.
（実施例）
本発明の基板への薄膜形成方法の実施例を、従来例と共
に説明する。(Example) An example of the method of forming a thin film on a substrate according to the present invention will be described together with a conventional example.
実施例１
表面酸化された厚さ０．５ｍｍの８１基板を洗浄し、イ
オンエツチングした後、高周波スパッタリング法（ＲＦ
２００Ｗ）により厚さ１５００人のＣｒ膜を形成し、
直流スパッタリング法により厚さ３０００人のＰｔ膜を
形成し、次いで直流スパッタリング法により厚さ３００
０人のＡｕ膜を形成した。Example 1 After cleaning and ion etching a surface-oxidized 81 substrate with a thickness of 0.5 mm, radio frequency sputtering (RF
200W) to form a 1500mm thick Cr film,
A 3000mm thick Pt film was formed by DC sputtering, and then a 3000mm thick Pt film was formed by DC sputtering.
An Au film of 0 people was formed.
従来例１
表面酸化された厚さ０．５ｍｍのＳｉ基板を洗浄し、イ
オンエツチングした後、直流スパッタリング法（＋５０
０Ｗ）により厚さ１５００ＡのＣｒ膜を形成し、次に直
流スパッタリング法により厚さ３０００へのＰｔ膜を形
成し、次いで直流スパッタリング法により厚さ３０００
人のＡｕ膜を形成した。Conventional Example 1 After cleaning and ion etching a surface-oxidized Si substrate with a thickness of 0.5 mm, a DC sputtering method (+50
0W) to form a 1500A thick Cr film, then a DC sputtering method to form a 3000A thick Pt film, and then a DC sputtering method to form a 3000A thick Pt film.
A human Au film was formed.
こうしてＳｉ基板へ形成した実施例１及び従来例１の薄
膜の膜付着強度を測定する為に、ビールテストを行った
処、従来例１の薄膜は部分的な剥離が生じたのに対し、
実施例１の薄膜は全く剥離が生じなかった。In order to measure the film adhesion strength of the thin films of Example 1 and Conventional Example 1 thus formed on the Si substrate, a beer test was conducted, and while the thin film of Conventional Example 1 partially peeled off.
The thin film of Example 1 did not peel off at all.
実施例２
厚さ１．０ｍｍのＡＩ！２０ｓ基板を洗浄し、イオンエ
ツチングした後、高周波スパッタリング法（ＲＦ５００
Ｗ）により厚さ２０００人のｐｔ膜を形成し、次に直流
スパッタリング法により厚さ１．０μｍのＰｔ膜を形成
した。Example 2 AI with a thickness of 1.0 mm! After cleaning the substrate for 20 seconds and performing ion etching, high frequency sputtering method (RF500
A Pt film with a thickness of 2000 μm was formed using W), and then a Pt film with a thickness of 1.0 μm was formed using a DC sputtering method.
従来例２
厚さ１．ＯｍｍのＡＡ２０３基板を洗浄し、イオンエツ
チングを行った後、直流スパッタリング法により厚さ１
．２μｍのｐｔ膜を形成した。Conventional example 2 Thickness 1. After cleaning and ion etching an AA203 substrate with a thickness of
．． A 2 μm PT film was formed.
こうしてＡｊ’ｚＯａ基板へ形成した実施例２及び従来
例２の薄膜の膜付着強度を測定するために、ビールテス
トを行った処、従来例２の薄膜は部分的な剥離が生じた
が、実施例２の薄膜は全く剥離が生じなかった。また従
来例２の薄膜は加熱した処全面剥離したが、実施例２の
薄膜は加熱しても全（剥離が生じなかった。In order to measure the film adhesion strength of the thin films of Example 2 and Conventional Example 2 thus formed on the Aj'zOa substrate, a beer test was conducted, and the thin film of Conventional Example 2 partially peeled off. The thin film of Example 2 did not peel off at all. Moreover, the thin film of Conventional Example 2 peeled off on the entire surface when heated, but the thin film of Example 2 did not peel off on the entire surface even when heated.
（発明の効果）
以上の通り本発明の基板への薄膜形成方法によれば、基
板との膜付着強度の高い薄板を形成することができる。(Effects of the Invention) As described above, according to the method for forming a thin film on a substrate of the present invention, a thin plate with high film adhesion strength to the substrate can be formed.
出願人 田中貴金属工業株式会社Applicant: Tanaka Kikinzoku Kogyo Co., Ltd.
Claims (1)
於いて、基板の洗浄、イオンエッチングを行った後、第
１層目を高周波スパッタリング法により薄膜を形成し、
第２層目以降を直流スパッタリング法により薄膜を形成
することを特徴とする基板への薄膜形成方法。1) When forming a thin film on a substrate of Si, Al_2O_3, etc., after cleaning the substrate and performing ion etching, the first layer is formed by high frequency sputtering method,
A method for forming a thin film on a substrate, characterized in that the second layer and subsequent layers are formed by direct current sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277220A JP3033780B2 (en) | 1990-10-16 | 1990-10-16 | Method of forming thin film on substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277220A JP3033780B2 (en) | 1990-10-16 | 1990-10-16 | Method of forming thin film on substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04154965A true JPH04154965A (en) | 1992-05-27 |
| JP3033780B2 JP3033780B2 (en) | 2000-04-17 |
Family
ID=17580490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2277220A Expired - Lifetime JP3033780B2 (en) | 1990-10-16 | 1990-10-16 | Method of forming thin film on substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3033780B2 (en) |
-
1990
- 1990-10-16 JP JP2277220A patent/JP3033780B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3033780B2 (en) | 2000-04-17 |
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