JPH04154604A - Oxide superconductor and method and device for preparing the same - Google Patents

Abstract

PURPOSE:To permit to exhibit a high critical current density even in a high magnetic field by forming heterogeneous sections for dividing an oxide superconductor layer into plural superconductors along the current-flowing direction and orienting the C axis of the crystal of the oxide superconductor in the direction orthogonal with the current-flowing direction. CONSTITUTION:Continuous heterogeneous sections 8, e.g. crystal-non-oriented oxide superconductor layers or composite oxide layers having a different composition, are formed in a stripe or island state along the longitudinal direction of an oxide superconductor layer 7 disposed on a substrate 6 to divide the superconductor layer 7 into plural superconductor sections 7a. The superconductors 7a on the side of the heterogeneous sections 8 are crystallized and oriented so that the C shaft of the crystal is directed vertically on the upper surface of the superconductor 7a.

Description

DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to an oxide superconducting conductor that has high critical current characteristics even in a high magnetic field, a method for manufacturing the same, and an apparatus for manufacturing the same.

``Conventional technology j Conventional, sputtering method, vapor deposition method, laser vapor deposition method, CV
The oxide superconducting layer can be directly formed on a single crystal substrate or metal tape using various thin film formation methods such as the D method, or the oxide superconducting layer can be formed after forming a buffer layer on the metal tape. Attempts are being made to prototype oxide superconducting conductors.

Incidentally, the oxide superconductor has electrical anisotropy such that it is easy to conduct electricity in the a-axis and b-axis directions of the crystal, but it is difficult to conduct electricity in the c-axis direction. for example,
As shown in Figure 5, Ba atoms, Y atoms, Cu atoms, and O
Y rB composed of atoms bonded a=c uso
In an oxide superconductor having a composition of , -6, current easily flows in the a-axis and b-axis directions of the crystal axes, and it is difficult to flow in the c-axis direction. Therefore, the oxide superconducting layer formed on the Go board is oriented so that the C axis is perpendicular to the top surface of the base material, and when a current is passed parallel to the surface direction of the oxide superconducting layer, the critical current property is higher. is considered to be obtained.

``Invention or problem to be solved'' However, the more an attempt is made to form an oxide superconducting layer with pure components and good crystal orientation, the worse the critical current characteristics of the oxide superconducting layer under a magnetic field. Tend. The reason for this decrease in critical current characteristics under a magnetic field is that in the oxide superconducting conductor 3 formed by forming the oxide superconducting layer 2 on the top surface of the tape-shaped base material l, as shown in FIG. This is thought to be due to the causes explained below.

First, when a magnetic field is applied perpendicularly to the upper surface of the oxide superconducting layer 2 and a current is passed in the longitudinal direction of the oxide superconducting layer 2, a Lorentz force acts perpendicularly to the current direction. When the magnetic flux moves inside the oxide superconducting layer 2 due to the Lorentz force, a voltage is generated due to the speed, and the critical current characteristics are deteriorated. Generally, in the superconducting state, a superconductor exhibits complete diamagnetism and does not allow magnetic flux to enter the inside of the superconductor, but in the case of type 2 superconductors, magnetic flux enters the inside of the superconductor, It is known that only the part of the magnetic flux line that enters becomes a normal conductive state, and the other part becomes a completely diamagnetic superconducting state. Therefore, when the magnetic flux lines that have entered the superconductor are moved by the Lorentz force, the normal conducting portion increases, and eventually the entire superconductor transitions to a normal conducting state.

For this reason, conventionally, in metal-based or alloy-based superconductors, a pinning center is introduced inside the superconductor to prevent the movement of magnetic flux in order to improve the critical current characteristics. This pinning center refers to a non-uniform point such as an impurity, a different phase part, or a grain boundary inside the superconductor.

In view of the above, in the oxide superconducting conductor 3 having the above structure, measures to improve the grain boundary current characteristics by introducing pinning centers are being considered.

The present invention has been made in view of the above circumstances, and has two objects: to provide an oxide superconducting conductor that exhibits a high critical current density even in a high magnetic field, and to provide a method for manufacturing the oxide superconducting conductor. , an object of the present invention is to provide an apparatus for manufacturing the oxide superconducting conductor.

"Means for solving the problem" In order to solve the problem, the invention described in claim 1 has the following features:
In an oxide superconducting conductor formed by forming an oxide superconducting layer on a base material, an inhomogeneous portion is provided inside the oxide superconducting layer to divide the oxide superconducting layer into a plurality of oxide superconducting portions along the current conduction direction. is formed, and the crystals of each oxide superconducting part are oriented so that the C axis of the crystal axis thereof is perpendicular to the current direction.

In order to solve the above problem, the invention described in claim 2 has the following features:
In an oxide superconducting conductor formed by laminating a plurality of oxide superconducting layers on a base material, each of the plurality of oxide superconducting layers is crystal oriented such that the C axis of each crystal axis is oriented at right angles to the current direction. At the same time, an oxide superconducting part having a crystal orientation different from that of the C-axis oriented oxide superconducting layer or a heterogeneous part made of a material that does not exhibit superconducting properties is formed between each oxide superconducting layer. It is what it is.

In order to solve the above problem, the invention described in claim 3 has the following features:
The raw material gas for the oxide superconductor is introduced onto the base material installed inside the reactor, and the reactants of the raw material gas are deposited on the base material to form an oxide superconducting layer on the base material, resulting in oxide superconductivity. In a method for manufacturing a conductor, a raw material gas with a mixing ratio to form an oxide superconducting layer with a desired composition and a raw material gas with a mixing ratio to form an oxide superconducting layer having a composition deviated from the desired composition or a heterogeneous part such as an insulating layer is used. In this method, raw material gases having a mixed ratio are introduced onto a substrate in an adjacent state, and oxide superconducting layers and heterogeneous portions having a desired composition are formed on the substrate in an alternating and parallel state.

In order to solve the above problem, the invention described in claim 4 has the following features:
A method for producing an oxide superconducting conductor in which an oxide superconducting layer is laminated on a base material includes a step of forming an oxide superconducting layer with crystal orientation on the base material, and a step of forming an oxide superconducting layer with crystal orientation on the base material. A step of forming a heterogeneous portion such as a different oxide superconducting layer or an insulating layer having a different composition ratio, and a step of forming an oxide superconducting layer equivalent to the oxide superconducting layer on the heterogeneous portion are repeatedly performed. This is the material that forms oxide superconducting conductors.

In order to solve the above problem, the present invention includes a reactor capable of storing a base material therein, an introduction part for introducing oxygen gas into the inside of this reactor, and both sides of this introduction part. The reactor includes a plurality of introduction pipes arranged in an aligned state, and a gas discharge part provided in the reactor, and the plurality of introduction pipes are arranged at a mixing ratio for forming an oxide superconducting layer having a desired composition. A main introduction pipe for introducing raw material gas, and a secondary introduction pipe for introducing raw material gas at a mixing ratio to form a heterogeneous layer such as an oxide superconducting layer or an insulating layer with a composition deviated from the desired composition. It consists of.

``Effect - In the oxide superconducting conductor according to the present invention, a heterogeneous portion perpendicular to the a-layer direction is introduced inside the oxide superconducting layer, so that a magnetic field acts on the oxide superconducting layer. When current is applied in the oxide superconducting layer, even if the magnetic flux lines that have entered the inside of the oxide superconducting layer try to be moved by the Lorentz force, the heterogeneous portion suppresses this movement.Therefore, the critical current density of the superconducting conductor is improved.

In addition, since the raw material gas with the second mixing ratio and the raw material gas with a different mixing ratio are introduced onto the base material in the reactor in an adjacent state, there is no The oxide superconducting layer having the composition and the other non-uniform composition are formed in an aligned state.

The present invention will be explained in more detail below.

FIG. 1 shows an oxide superconducting conductor according to an embodiment of the present invention. The oxide superconducting conductor 5 of this embodiment is formed by forming an oxide superconducting layer 7 on a tape-shaped base material 6. It is. The oxide superconducting layer 7 is divided into a plurality of superconducting portions 7a by forming a plurality of (three in FIG. 1) streak-like heterogeneous portions 8 along the longitudinal direction of the oxide superconducting layer 7. It is what it is.

The heterogeneous portion 8 is a portion consisting of a layer of an oxide superconductor whose crystals are not oriented, a composite oxide layer with a composition deviating from the composition of the intended oxide superconductor, or an impurity layer. Both superconducting parts 7a of the heterogeneous part 8 are crystal-oriented so that the C-axis of the crystal is perpendicular to the upper surface of the superconducting part 7a. It is known that in the crystal of an oxide superconductor, it is easy to pass current in the a- and b-axis directions, but it is difficult to pass current in the c-axis direction. Therefore, when the C-axis is oriented as described above, it becomes easier for current to flow along the longitudinal direction of the tape-shaped base material 5.

Further, the heterogeneous portion 8 is not limited to a layered or striped shape, but may be discontinuous like an island, and may be either continuous or intermittent.

Furthermore, the heterogeneous portions 8 may be distributed in a staggered manner in the oxide superconducting layer 7.

For the base material 6, it is preferable to use a material such as SrTios, MgO, etc., which has excellent crystal consistency and a coefficient of thermal expansion similar to that of the oxide superconductor. When a metal base material is used as the base material 6, it is preferable to use a buffer layer made of a material having excellent crystal consistency and having a coefficient of thermal expansion close to that of the oxide superconductor. This buffer layer may have a thickness ranging from a fraction of a micrometer to several micrometers thick.

Furthermore, the buffer layer may be formed using any of the widely known film forming methods such as CVD, physical vapor deposition, thermal spraying, and the like.

The oxide superconducting layer 7 is Y-Ba-Cu-0 based, Bi
S r-Ca-Cu-0 system, T I-B a-Ca-C
Any layer may be used as long as it is made of an oxide superconductor such as u-0 type, TIS r-V-0 type, etc.

Further, the oxide superconducting layer 7 used here is not limited to the one described above, and may be a layer of an oxide superconductor having a known composition. Further, the oxide superconducting layer 7 may be formed by any known film forming method such as CVD, laser evaporation, sputtering, or the like.

To explain a laser evaporation device as a means of forming oxide superconducting li7, the laser evaporation device is:
The target is stored inside a chamber that can be evacuated,
A base material is provided in the chamber facing this target,
This device irradiates the target with a laser beam to knock out and scoop out constituent particles of the target and deposit them on a substrate. In addition, a CVD device is a system in which a gas of a compound of multiple elements constituting an oxide superconductor is introduced into a reactor that can be evacuated, and the compound gas is reacted inside the reactor to form an oxide superconducting layer on a base material. In this apparatus, a plasma flame or the like may be generated inside the reactor to avoid reaction of the compound gas.

In the oxide superconducting conductor 5 having the structure shown in FIG. 1, the oxide superconducting layer 7 is C-axis oriented and current flows in the longitudinal direction and the width direction of the base material 6, so that the critical current density is high. can do. Furthermore, since the oxide superconducting layer 7 is partitioned into a plurality of parts by the inhomogeneous parts 8, even if a magnetic flux movement phenomenon occurs due to the Lorentz force in each partitioned oxide superconducting part when a magnetic field is applied, the inhomogeneous parts 8 As a result of the movement of magnetic flux being obstructed by the portion 8, there is an effect that the critical current density of the oxide superconducting conductor 5 can be improved. Therefore, according to the present invention, an oxide superconducting conductor 5 having a high critical current density even in a magnetic field can be provided.

In the oxide superconducting layer 7, the area of the portion where the non-uniform portion 8 is formed is preferably 10% or less of the entire oxide superconducting layer 7. If the area of this heterogeneous portion 8 is too large,
This does not contribute to improving the critical current density of the oxide superconducting conductor 5 as a whole.

Further, it is preferable that the thickness or width of the non-uniform portion 8 is 0.5 μm or less.

FIG. 2 shows an oxide superconducting conductor according to a second embodiment of the present invention. The oxide superconducting conductor 10 of this example has a plurality of oxide superconducting layers 12 laminated on the upper surface of a tape-shaped base material 11. The structure is as follows. A heterogeneous layer 13 such as an oxide superconducting layer or an insulating layer having a crystal orientation different from that of the oxide superconducting layer 12 is interposed between each of the oxide superconducting layers 12 .

The base material 11 and the oxide superconducting layer 12 are the same as the base material 6 of the previously described embodiment.

Therefore, the crystals of the oxide superconducting layer 12 are oriented such that the C axis thereof is perpendicular to the upper surface of the oxide superconducting layer 12.

The heterogeneous layer 13 is composed of an oxide superconducting layer having a crystal orientation different from the crystal orientation described above, or an insulating layer such as a composite oxide having a composition similar to that of the oxide superconducting layer. The heterogeneous layer 13 may be a completely continuous layer, but
It may also have a structure in which fine oxide superconducting portions are dispersed in island-like shapes between the oxide superconducting layers 12°12. In this structure, the upper and lower oxide superconducting layers 12.12 are partially joined to each other through the intermittent portions of the heterogeneous layer 13.

FIG. 3 shows an oxide superconducting conductor 5 having the structure shown in FIG.
This is an example of a manufacturing apparatus suitable for use in manufacturing by applying the VD method.

In FIG. 3, reference numeral 20 denotes a vertical reactor, and this reactor 20 is formed by integrating an upper container 21 and a lower container 22 via a narrow and constricted connecting portion 23. A substrate holder 24 equipped with a heater heating mechanism is provided in the upper part of the lower container 22 of this reactor 20, and the substrate 6 is placed on the substrate holder 24.

Further, an introduction part 26 for oxygen gas and carrier gas is formed in the center of the ceiling of the upper container 21, and an introduction part 26 is formed at the center of the ceiling part of the upper container 21.
A plurality of introduction tubes are provided on both sides of 6. These introduction pipes consist of a main introduction pipe 27 and a sub introduction pipe 28,
The main introduction pipe 27 and the sub introduction pipe 28 are arranged alternately in an aligned state. The main introduction pipe 27 and the sub introduction pipe 28 are each connected to a gas phase source such as a separate bubbler, so that desired source gases can be separately introduced together with the carrier gas.

Furthermore, an exhaust part 2 is provided at the bottom of the lower container 22 of the reactor 20.
9 is formed so that the raw material gas inside the reactor 20 can be discharged. Further, a heating device R30 is installed around the reactor 20, and the substrate holder 2
It is also possible to use it together with the heater provided in 4.

The main introduction pipe 27 is for introducing into the reactor 20 a raw material gas for producing an oxide superconducting layer having a target composition, and the sub introduction pipe 28 is for introducing a raw material gas having a composition different from the above-mentioned composition into the reactor 20. 20 and can be placed as close to the substrate 26 as possible.

For example, Y −
When forming a B a-Cu-0 based oxide superconducting layer,
A raw material gas generated from a gas phase source containing each constituent element is used.

More specifically, as each gas phase source, powders of diketone compounds such as acetylacetone compounds and hexafluoroacetylacetone compounds, and cyclopentadienyl compounds of each of the above-mentioned elements are used. In addition, as a Ba source, Ba-
Bis-2,2,6,6-tetramethyl-35-heptanedionate "Abbreviation: Ba(DPM)yJ, Ba-bis-1,1,1,2,2-pentafluoro-6.6-dimethyl-3. 5-hebutanedione “abbreviation B a (P P
M) tJ'-Ba-His-1,1,1,5,5,5-
Hexafluoro-2,4-heptanedione "abbreviation B a
β-diketone chelate complexes such as (HF A )J are used.

Next, a case will be described in which the oxide superconducting conductor 5 having the structure shown in FIG. 1 is manufactured using the above-mentioned apparatus.

To manufacture the oxide superconducting conductor 5 using the apparatus shown in FIG. 3, the heating device 30 is operated to heat the inside of the reactor 20, and the reactor A raw material gas is sent into the reactor 20 from each gas phase source together with a carrier gas, and oxygen gas is sent into the reactor 20 through the introduction part 26.

Among these raw material gases, raw material gases with a mixing ratio for forming an oxide superconducting layer with a desired composition are passed through the main introduction pipe 27, and raw material gases with a composition deviating from the above-mentioned mixing ratio are passed through the sub introduction pipe 28. reactor 2 with carrier gas from
0, the raw material gases having different mixing ratios flow adjacent to each other toward the substrate 6, react on the substrate 6, and form the oxide superconducting layer 7. In this case, the raw material gases flowing toward the substrate 6 have a mixture ratio of the target mixture and a mixture ratio that deviates from the target mixture ratio, so there is a mixture of raw material gases with good crystal orientation of the target composition on the substrate 6. Superconducting part 7a and heterogeneous part 8
are formed adjacent to each other.

By doing the above, the heterogeneous portion 8 of the structure shown in FIG.
It is possible to manufacture an oxide superconducting conductor 5 into which .

In the device having the above structure, the connecting portion 23 of the reactor 20
Since the flow of the source gas is constricted, the source gas is reliably blown onto the substrate 6 in a layered manner, resulting in an oxide superconductor divided into two sections, a superconducting portion 7a and a heterogeneous portion 8 and 7, as shown in FIG. Layer 7 is formed.

In the manufacturing apparatus j having the above structure, the diameter of the main introduction pipe 27 and the diameter of the sub introduction pipe 28 are preferably about 10:1, and the ratio of the flow rate from the main introduction pipe 27 to the flow rate from the sub introduction pipe 28 is preferably about 10:1. The ratio is preferably about 10:1.

U Production Example 1 "An oxide superconducting layer was formed on a substrate made of SrTios using an RF magnetron sputtering device using a target having a composition ratio of Y:Ba:Ca=1:3:3. At this time, the degree of vacuum in the chamber of the sputtering apparatus was set to 1, OX IO-'' Torr, the oxygen flow rate was fixed at 60 cc, and the heater for heating the substrate was turned on and off to remove the C-axis oriented oxide. A superconducting layer and an insulating layer having a composition similar to this oxide superconducting layer were alternately laminated.

When the heater is turned on, the substrate is heated to 750°C, and when the heater is turned off, the substrate is substantially maintained at about 300 to 400°C. Lamination was carried out a total of 5 times by repeating a state in which the heater was on for 2 hours and a state in which the heater was off for 30 minutes.

As a result, a 0.2 μm thick oxide superconducting layer with C-axis orientation, and a 0.05 μm thick insulating layer with a composition similar to that of the oxide superconducting layer, with no C-axis orientation observed, were found to have a total of 5 layers. An oxide superconducting layer with a total thickness of 1 μm was obtained.

In order to measure the critical current characteristics of the obtained oxide superconducting layer, a magnetic field was applied parallel to the top surface of the oxide superconducting layer, a current was passed perpendicular to the magnetic field, and the critical current value was measured. Further, a C-axis oriented oxide superconducting layer having a thickness of 1 μm was formed by a conventional sputtering method, and the critical current value was measured by passing a current while applying a magnetic field in the same direction as described above. The results are listed in Table 1.

As is clear from Table 1, the oxide superconducting conductor according to the method of the present invention exhibits excellent characteristics with a small decrease in critical current density when energized by applying a magnetic field. Therefore, it has been found that the insulating layer interposed between the plurality of oxide superconducting layers plays the role of a pinning center.

However, when observing the presence of an insulating layer with an electron microscope,
The insulating layer sandwiched between the C-axis oriented oxide superconducting layers is
It was found that they do not exist uniformly, but exist in islands, and about 172 are not present.

From this result, it was found that each oxide superconducting layer with C-axis orientation even when the surface portion of the first (top) oxide superconducting layer is energized.
It is believed that the above-mentioned good results were obtained because a sufficient current was flowing and there were also pinning centers between the oxide superconducting layers.

U production PI 2 J B i:S r:Ca:Cu= 2:2:1:2
In order to make the composition ratio Bi:Sr:Ca:Cu=I
, 5:3:3:2J were blended with DPM-based raw materials to obtain raw material A. In addition, the blending composition is B i:S r:
A raw material with Ca:Cu=2:3:2:2 was used as a B raw material. The raw material A and the raw material B are each independently introduced into the chamber through the introduction pipes shown in FIG. It was poured into the substrate along the gas flow path. Using a manufacturing apparatus having the configuration shown in FIG. 3 in which six A raw material introduction pipes and five Japanese raw material introduction pipes were arranged alternately, the inside of the chamber was evacuated to form a film.

Note that the diameter of the chamber is narrowed in the area between the substrate and the introduction tube so that the entire upper surface of the substrate is sufficiently exposed to the reaction gas. Further, a MgO substrate having a (100) top surface was used as a substrate, and the substrate was heated to 850° C. to form a film. As a result, an oxide superconducting layer having the structure shown in FIG. 4 in which the superconducting portions 41 and the heterogeneous portions 42 were laterally aligned could be produced on the substrate 40.

Although the boundaries of the oxide superconducting layer with the structure shown in Figure 4 are not clear, component analysis shows that the C-axis is oriented h.
The oxide superconducting portion has a width of approximately 1 nm and is approximately Bi:Sr:
Critical temperature Tc=8 with a composition of Ca:Cu=2:2:1:2
The non-uniform, non-oriented portion that showed 0K was a portion lacking Sr and was an insulating portion that did not exhibit superconductivity. This heterogeneous portion exhibits a width of about 1 μm to 0.01 μm,
The film was formed in layers. SME/ED of this heterogeneous part
As a result of S analysis, the heterogeneous portion was 0°5 to 0.1 μm.
However, there was a possibility that the width was less than 0.1 μm in some parts. Moreover, this heterogeneous part is
Although it is generated parallel to the oriented oxide superconducting part,
There are some ungenerated parts and width varying parts, making it irregular.

Table 2 shows the results of measuring critical current characteristics in liquid nitrogen by applying a perpendicular magnetic field to the oxide superconducting conductor formed as described above.

As is clear from Table 2, the oxide superconducting conductor of the present invention had a strong magnetic field.

"Effects of the Invention" As explained above, the oxide superconducting conductor of the present invention has a non-uniform part inside the oxide superconducting layer, so when current is applied in the presence of a magnetic field, the non-uniform part As a result of suppressing the movement of magnetic flux lines due to the Lorentz force, the critical current density can be improved. And, even if such excellent properties are obtained by laminating oxide superconducting layers in a layered manner on a base material with inhomogeneous portions interposed therebetween, do they occur within the oxide superconducting layer formed on the base material? A structure in which a heterogeneous portion is formed can also be obtained in the same manner.

In addition, a film is formed on the substrate using an apparatus equipped with a main introduction pipe that sends the raw material gas into the reactor to obtain an oxide superconducting layer with the desired composition, and a sub-induction pipe that introduces the raw material gas whose composition is different from that one. If you do, ctiI! It is possible to form an oxide superconducting layer in which l-oriented oxide superconducting portions and inhomogeneous portions are arranged adjacent to each other.

Furthermore, when stacking an oxide superconducting layer on a base material, by repeating the steps of forming the oxide superconducting layer, forming the heterogeneous portion, and forming the oxide superconducting layer again, the critical current density can be increased. , it is possible to produce an oxide superconducting conductor with a laminated structure whose properties do not deteriorate even in high magnetic fields.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing an embodiment of the present invention, FIG. 2 is a perspective view of a second embodiment of the invention, FIG. 3 is a configuration diagram showing an example of an oxide superconductor manufacturing apparatus, and FIG. The figure is a perspective view of the oxide superconducting conductor manufactured in the example, and FIG.
An atomic arrangement diagram showing the crystal structure of a -Cu-0 based oxide superconductor, and FIG. 6 is a perspective view of a conventional oxide superconductor. 5.10...Oxide superconductor, 6,11.40...
Base material, 7.12...Oxide superconducting layer, 7g, 41...
Superconducting part, 8.42... Heterogeneous part, 13... Heterogeneous layer, 20... Reactor, 21... Upper container, 22...
・Lower container, 26...Introduction part, 27...Main introduction pipe, 2
8...Sub-introduction pipe, 29...Discharge part, 30...Heating device.

Claims (5)

[Claims] (1) In an oxide superconducting conductor formed by forming an oxide superconducting layer on a base material, the oxide superconducting layer is divided into a plurality of oxide superconducting portions along the current conduction direction inside the oxide superconducting layer. An oxide superconducting conductor characterized in that a heterogeneous portion is formed and each oxide superconducting portion is crystal oriented such that the c-axis of its crystal axis is oriented at right angles to the current direction. (2) In an oxide superconducting conductor formed by laminating a plurality of oxide superconducting layers on a base material, each of the plurality of oxide superconducting layers has its crystal axis c-axis oriented at right angles to the current direction. In addition, between each oxide superconducting layer, there is an oxide superconducting part having a crystal orientation different from that of the c-axis oriented oxide superconducting layer, or a heterogeneous part made of a material that does not exhibit superconducting properties. An oxide superconducting conductor characterized by being formed. (3) Introducing the raw material gas of the oxide superconductor onto the base material installed inside the reactor, and forming the oxide superconducting layer on the base material by depositing the reactants of the raw material gas on the base material. In a method for manufacturing an oxide superconducting conductor, a raw material gas is mixed at a mixing ratio to form an oxide superconducting layer with a desired composition, and a heterogeneous portion such as an oxide superconducting layer or an insulating layer having a composition deviated from the desired composition is formed. The method is characterized by introducing raw material gases in a mixing ratio to achieve the desired composition onto the substrate in an adjacent state, and forming an oxide superconducting layer having a desired composition and a heterogeneous portion on the base material in an alternating and parallel state. Method for manufacturing oxide superconducting conductor. (4) A method for producing an oxide superconducting conductor formed by laminating an oxide superconducting layer on a base material, which includes a step of forming a crystal-oriented oxide superconducting layer on the base material, and combining the oxide superconducting layer and crystals. A step of forming a heterogeneous portion such as an oxide superconducting layer with different orientation or an insulating layer with a different composition ratio, and a step of forming an oxide superconducting layer equivalent to the oxide superconducting layer on this heterogeneous portion. A method for producing an oxide superconducting conductor, the method comprising repeatedly performing the steps to form an oxide superconducting conductor. (5) A reactor capable of storing a base material inside, an introduction part for introducing oxygen gas into the inside of this reactor, a plurality of introduction pipes arranged in an array on both sides of this introduction part, and a reactor. the plurality of introduction pipes include a main introduction pipe for introducing raw material gas at a mixing ratio for forming an oxide superconducting layer having a desired composition; An apparatus for manufacturing an oxide superconducting conductor, comprising a sub-introduction pipe for introducing raw material gases at a mixing ratio for forming a heterogeneous layer such as an oxide superconducting layer or an insulating layer having a mismatched composition.