JPH041505B2 - - Google Patents
Info
- Publication number
- JPH041505B2 JPH041505B2 JP58132570A JP13257083A JPH041505B2 JP H041505 B2 JPH041505 B2 JP H041505B2 JP 58132570 A JP58132570 A JP 58132570A JP 13257083 A JP13257083 A JP 13257083A JP H041505 B2 JPH041505 B2 JP H041505B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- conductivity type
- gate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58132570A JPS5936960A (ja) | 1983-07-20 | 1983-07-20 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58132570A JPS5936960A (ja) | 1983-07-20 | 1983-07-20 | 半導体記憶装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1355877A Division JPS5399778A (en) | 1977-02-11 | 1977-02-11 | Mos and mis electrostatic induction transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5936960A JPS5936960A (ja) | 1984-02-29 |
JPH041505B2 true JPH041505B2 (enrdf_load_html_response) | 1992-01-13 |
Family
ID=15084395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58132570A Granted JPS5936960A (ja) | 1983-07-20 | 1983-07-20 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5936960A (enrdf_load_html_response) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50128475A (enrdf_load_html_response) * | 1974-03-27 | 1975-10-09 |
-
1983
- 1983-07-20 JP JP58132570A patent/JPS5936960A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5936960A (ja) | 1984-02-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4364073A (en) | Power MOSFET with an anode region | |
US4814839A (en) | Insulated gate static induction transistor and integrated circuit including same | |
EP0036887B1 (en) | Semiconductor devices controlled by depletion regions | |
US4173766A (en) | Insulated gate field-effect transistor read-only memory cell | |
KR970053979A (ko) | 개선된 트랜지스터 셀을 포함하는 플래시 메모리 및 그 메모리를 프로그래밍하는 방법 | |
JPS5918870B2 (ja) | 半導体集積回路 | |
US6787851B2 (en) | Semiconductor devices including a silicon-on-insulator layer | |
US4306352A (en) | Field effect transistor having an extremely short channel length | |
JPS6323662B2 (enrdf_load_html_response) | ||
JPS638624B2 (enrdf_load_html_response) | ||
US7268378B1 (en) | Structure for reduced gate capacitance in a JFET | |
JPS6137799B2 (enrdf_load_html_response) | ||
JPH041505B2 (enrdf_load_html_response) | ||
KR100236589B1 (ko) | 트랜지스터 및 반도체장치 | |
JPS6044833B2 (ja) | 絶縁ゲ−ト型静電誘導トランジスタ | |
JPS6020910B2 (ja) | 静電誘導トランジスタ及び半導体集積回路 | |
JPH03503227A (ja) | イントリンシックチャンネルを有する超薄型サブミクロンmosfet | |
JPS5917859B2 (ja) | 半導体装置 | |
JPS5856270B2 (ja) | 絶縁ゲ−ト型静電誘導電界効果トランジスタ | |
Saraswat et al. | A high voltage MOS switch | |
JPS6349392B2 (enrdf_load_html_response) | ||
JPH03292770A (ja) | 静電誘導サイリスタ | |
JPS6323664B2 (enrdf_load_html_response) | ||
JPS6139743B2 (enrdf_load_html_response) | ||
JP2982049B2 (ja) | 絶縁ゲート型静電誘導トランジスタ |