JPH04150060A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04150060A JPH04150060A JP2275013A JP27501390A JPH04150060A JP H04150060 A JPH04150060 A JP H04150060A JP 2275013 A JP2275013 A JP 2275013A JP 27501390 A JP27501390 A JP 27501390A JP H04150060 A JPH04150060 A JP H04150060A
- Authority
- JP
- Japan
- Prior art keywords
- island
- pellet
- heat
- plate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000008188 pellet Substances 0.000 claims abstract description 31
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 238000000465 moulding Methods 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 abstract description 15
- 230000001070 adhesive effect Effects 0.000 abstract description 15
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置に関し、特に発熱量の大きいペレ
ットを搭載した半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device equipped with pellets that generate a large amount of heat.
従来の半導体装置は第４図に示すように、ペレット１の
裏面とリードフレーム３のアイランド３ａとを導電性の
接着剤２にて接着し、全面をモールド樹脂４にて覆って
いた。ここで、ペレット１が発熱すると、熱の大半は、
導電性の接着剤２を通り、アイランド３ａに伝導する。In a conventional semiconductor device, as shown in FIG. 4, the back surface of a pellet 1 and an island 3a of a lead frame 3 are bonded together with a conductive adhesive 2, and the entire surface is covered with a molding resin 4. Here, when pellet 1 generates heat, most of the heat is
It passes through the conductive adhesive 2 and is conducted to the island 3a.
アイランド３ａは、金属性のため、熱はアイランド３ａ
全而に広がり、アイランド３ａの下部のモールド樹脂４
を通して外へ放熱される。Since the island 3a is made of metal, the heat is transferred to the island 3a.
The mold resin 4 at the bottom of the island 3a spreads throughout the body.
Heat is radiated to the outside through the
この場合、放熱のための全体の熱抵抗Ｒ１は、下式で表
わされる。In this case, the overall thermal resistance R1 for heat radiation is expressed by the following formula.
ＲＴ ＝ １ ／ Ｉ ／ （１／ Ｒ） ｄ ｓ ）
Ｒ／Ｓ （１）Ｒは、樹脂４の
単位面積あたりの熱抵抗Ｓは、アイランド３ａの面積で
ある。RT = 1/I/(1/R)ds)
R/S (1) R is the thermal resistance S per unit area of the resin 4 and is the area of the island 3a.
但し、アイランド３ａは金属性、及び導電性接着剤２は
半田のなめ、それぞれの熱抵抗は零とする。However, the island 3a is made of metal, the conductive adhesive 2 is made of solder, and the thermal resistance of each is set to zero.
この従来の半導体装置では、発熱量の大きいペレット１
の熱は、導電性接着剤２とアイランド３ａ及びモールド
樹脂４を通して放熱されるなめ、曲成より全体の熱抵抗
Ｒ１は、樹脂４の熱伝導率Ｒとアイランド３ａとの面積
Ｓに関係する。そこで、モールド樹脂４の熱伝導率を高
くするのに、結晶性シリカ等を入れる。このため、１個
あたりのモールド樹脂の単価は、通常の２．１倍にもな
り、高価になるという欠点がある。In this conventional semiconductor device, pellets 1 with a large calorific value
Since the heat is radiated through the conductive adhesive 2, the island 3a, and the mold resin 4, the overall thermal resistance R1 is related to the thermal conductivity R of the resin 4 and the area S of the island 3a. Therefore, crystalline silica or the like is added to increase the thermal conductivity of the mold resin 4. Therefore, the unit price of the molding resin per piece is 2.1 times the normal price, which is a disadvantage of being expensive.
また、アイランド３ａの面積を大きくするなめには、半
導体装置の形か大きくなり、軽薄短小の技術動向に合わ
ないという欠点があった。In addition, increasing the area of the island 3a has the disadvantage that the size of the semiconductor device becomes large, which does not match the technological trend of making it lighter, thinner, shorter and smaller.
さらに、例えばステレオのように左右に同じ半導体部品
を使用した場合、従来の半導体部品では外部放熱板を個
々に装填するため、素子のバラツキによるペレットの発
熱量に差が出るため、周囲温度による電気的特性におい
て差が出る。Furthermore, when using the same semiconductor components on the left and right sides, as in a stereo, for example, conventional semiconductor components require external heat sinks to be individually mounted, which causes differences in the amount of heat generated by the pellets due to variations in the elements, resulting in electricity generation depending on the ambient temperature. There are differences in physical characteristics.
本発明の目的は、装置を小型化し、かつ半導体ペレット
に生ずる熱を有効に放熱する半導体装置を提供すること
にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device that is miniaturized and that effectively dissipates heat generated in semiconductor pellets.
前記目的を達成するため、本発明に係る半導体装置にお
いては、半導体ペレットと、伝熱板とを有する半導体装
置であって、
半導体ペレットは、アイランドに搭載され、その外周が
モールド樹脂で被覆されて樹脂封止されたものであり、
伝熱板は、半導体ペレットか搭載したアイランドに電気
的に絶縁されて接合され、その一端がモールド樹脂より
外部に露出されたものである。In order to achieve the above object, a semiconductor device according to the present invention includes a semiconductor pellet and a heat transfer plate, the semiconductor pellet being mounted on an island and having its outer periphery covered with a molding resin. The heat exchanger plate is electrically insulated and bonded to the island on which the semiconductor pellet is mounted, and one end of the heat exchanger plate is exposed to the outside through the molded resin.
伝熱板６は、その一端がモールド樹脂４で気密封止され
た半導体ペレフト１にアイランド部分で接触し、その他
端かモールド樹脂４の外部に露出している。One end of the heat transfer plate 6 contacts the semiconductor platen 1 hermetically sealed with the molding resin 4 at an island portion, and the other end is exposed outside the molding resin 4.
半導体ペレット１に生ずる熱は、伝熱板６を介して外部
に放熱される。Heat generated in the semiconductor pellet 1 is radiated to the outside via the heat transfer plate 6.
また、高温環境で使用される場合には、伝熱板６を介し
て半導体ペレット１を冷却する。Further, when used in a high temperature environment, the semiconductor pellet 1 is cooled via the heat transfer plate 6.
また、低温環境で使用される場合には、伝熱板６を介し
て半導体ペレット１を加温させて一定の温度に維持する
。Further, when used in a low temperature environment, the semiconductor pellet 1 is heated through the heat transfer plate 6 and maintained at a constant temperature.
以下、本発明の実施例を図により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
（実施例１） 第１図は、本発明の実線例１を示す断面図である。(Example 1) FIG. 1 is a sectional view showing a solid line example 1 of the present invention.
図において、リードフレーム３のアイランド３ａには、
半導体ペレット１が導電性接着剤２により接合されてい
る。アイランド３ａには、半導体ペレット１が搭載され
た上端面と反対の下端面に、伝熱板６の一端６ａが熱伝
導型接着剤５を介して電気的に絶縁されて接合されてい
る。In the figure, the island 3a of the lead frame 3 has
Semiconductor pellets 1 are bonded together with a conductive adhesive 2. One end 6a of a heat transfer plate 6 is electrically insulated and bonded to the lower end surface of the island 3a, which is opposite to the upper end surface on which the semiconductor pellet 1 is mounted, via a thermally conductive adhesive 5.
半導体ペレット１及び伝熱板６の外周は、モールド樹脂
４により被覆され、半導体ペレット１が気密封止され、
伝熱板６の他端６ｂは、モールド樹脂４より外部に露出
しでいる。The outer peripheries of the semiconductor pellet 1 and the heat exchanger plate 6 are covered with mold resin 4, and the semiconductor pellet 1 is hermetically sealed.
The other end 6b of the heat exchanger plate 6 is exposed outside of the molded resin 4.
図において、ペレット１から発熱した熱は、導電性の接
着剤２を通してアイランド３ａに伝搬され、さらに熱伝
導型接着剤５を通して伝熱板６に伝搬され、伝熱板６よ
り外部に放熱される。In the figure, the heat generated from the pellet 1 is transmitted to the island 3a through the conductive adhesive 2, and further transmitted to the heat transfer plate 6 through the heat conductive adhesive 5, and is radiated to the outside from the heat transfer plate 6. .
ここで、伝熱板６は、第１図のような構造になっており
、板厚はアイランド３ａの板厚と同じ０．４５市になっ
ている。Here, the heat transfer plate 6 has a structure as shown in FIG. 1, and the plate thickness is 0.45 mm, which is the same as the plate thickness of the island 3a.
本発明によれば、半導体ペレット１に生ずる熱を伝熱板
６を介して外部に放熱するため、モールド樹脂４中に熱
伝導率を高める結晶性シリカ等を混入する必要がない。According to the present invention, since the heat generated in the semiconductor pellet 1 is radiated to the outside via the heat transfer plate 6, there is no need to mix crystalline silica or the like that increases thermal conductivity into the mold resin 4.
また、第１図に示す半導体装置を複数用いる場合には、
第２図に示すように樹脂４から露出している伝熱板６の
他端６ｂが外部放熱板７に半田づけにて固定され、外部
放熱板７の一端には放熱用のフィン１００を取付け、外
部放熱板７を共有化した構成とする。Furthermore, when using a plurality of semiconductor devices shown in FIG.
As shown in FIG. 2, the other end 6b of the heat transfer plate 6 exposed from the resin 4 is fixed to the external heat sink 7 by soldering, and a heat radiation fin 100 is attached to one end of the external heat sink 7. , the external heat sink 7 is shared.
ここで、従来例と同様に熱抵抗を計算する。本発明では
、従来例のアイランドの面積の半分を用いるとすると、
Ｒ丁＝２Ｒ′／Ｓ （２）となる。Here, the thermal resistance is calculated in the same way as in the conventional example. In the present invention, if half the area of the island of the conventional example is used, then R = 2R'/S (2).
Ｒ′は、熱伝導型接着剤５の単位面積あたりの熱抵抗を
示す。ここで、樹脂４の熱伝導率２×１０’ ｃａｔ／
ｃ１°Ｃ２熱伝導型ノ接着ｊＪ”１５ （７） ＝、
伝導率１ ｘ １Ｏ−３ｃａｌ／ｃｎ℃であり、熱抵抗
と反比例の関係にあるから、従来の熱抵抗の式（１）と
本発明の熱抵抗の式（２）とを比較すると、同等になる
６よって、以上のように仮定したように、従来のモール
ド樹脂部分を１／２にしているため、従来の半分の大き
さに小型化できることを意味する。R' represents the thermal resistance per unit area of the thermally conductive adhesive 5. Here, the thermal conductivity of resin 4 is 2×10' cat/
c1°C2 Thermal conduction type adhesive jJ”15 (7) =,
Since the conductivity is 1 x 1O-3cal/cn°C and is inversely proportional to the thermal resistance, comparing the conventional thermal resistance equation (1) and the thermal resistance equation (2) of the present invention, they are equivalent. Therefore, as assumed above, since the conventional molded resin part is halved, it means that the size can be reduced to half of the conventional size.
（実施例２） 第３図は、本発明の実施例２を示す図である。(Example 2) FIG. 3 is a diagram showing a second embodiment of the present invention.
本実施例は、第２図に示す冷却用フィンに代えて、発熱
体１１０をもち、外部放熱板７は断熱材で覆われている
。周囲温度がきわめて低い場合に、発熱体１１０により
、外部放熱板７を介して伝熱板６を加温して半導体装置
内部のペレット１を一定温度に保温する。これにより、
温度特性による特性変動を防止することができる。This embodiment has a heating element 110 instead of the cooling fins shown in FIG. 2, and the external heat sink 7 is covered with a heat insulating material. When the ambient temperature is extremely low, the heating element 110 heats the heat transfer plate 6 via the external heat sink 7 to keep the pellet 1 inside the semiconductor device at a constant temperature. This results in
Characteristic fluctuations due to temperature characteristics can be prevented.
さらに、発熱体１１０の代わりに、冷却剤１２０を用い
ることにより、周囲温度がきわめて高い場合でも温度特
性による特性変動を防止できる。Furthermore, by using the coolant 120 instead of the heating element 110, it is possible to prevent characteristic fluctuations due to temperature characteristics even when the ambient temperature is extremely high.
また、２つ以上の半導体ペレット１に生ずる熱は、それ
ぞれ外部放熱板７を共有化して伝搬されるため、半導体
装置内の素子のバラツキに起因する発熱量差によって周
囲温度による電気的特性の差がなくなる。In addition, since the heat generated in two or more semiconductor pellets 1 is propagated by sharing the external heat sink 7, differences in electrical characteristics due to ambient temperature are caused by differences in heat generation amount due to variations in elements within the semiconductor device. disappears.
以上説明したように本発明によれば、特殊なモールド樹
脂を用いることなく、さらに放熱板を共用化することに
より、従来の半導体装置のアイランドより小型化でき、
それに伴ってモールド樹脂部を小型化できる。また、放
熱板を共用して熱の伝搬を行うため、個々の半導体装置
の内部素子のバラツキによる発熱の差によって、周囲温
度による電気的特性のバラツキを解消することができる
。As explained above, according to the present invention, by using a common heat sink without using a special molding resin, it is possible to make the island smaller than the conventional semiconductor device island.
Accordingly, the mold resin part can be downsized. Furthermore, since the heat sink is shared to propagate heat, it is possible to eliminate variations in electrical characteristics due to ambient temperature due to differences in heat generation due to variations in internal elements of individual semiconductor devices.
さらに、寒冷地での電子部品の温度特性による動作不良
を共用放熱板を外部より加熱することにより、なくすこ
とができ、また逆に熱帯地での電子部品の温度特性によ
る動作不良を共用放熱板を外部より冷却することにより
、なくすことかできるという効果を有する。Furthermore, malfunctions due to the temperature characteristics of electronic components in cold regions can be eliminated by heating the shared heat sink from the outside, and conversely, malfunctions due to the temperature characteristics of electronic components in tropical regions can be eliminated by using the shared heat sink. It has the effect that it can be eliminated by cooling it from the outside.
第１図は、本発明の実施例１を示す断面図、第２図は、
使用状態を示す図、第３図は、本発明の実施例２を示す
図、第４図は、従来例を示す断面図である。
１・・・半導体ペレット
３ａ・・・アイランド
５・・・熱伝導型接着剤
６・・・伝熱板
２・・・導電性接着剤
４・・・モールド樹脂FIG. 1 is a sectional view showing Embodiment 1 of the present invention, and FIG.
FIG. 3 is a diagram showing a usage state, FIG. 3 is a diagram showing a second embodiment of the present invention, and FIG. 4 is a sectional view showing a conventional example. 1... Semiconductor pellet 3a... Island 5... Thermal conductive adhesive 6... Heat exchanger plate 2... Conductive adhesive 4... Mold resin
Claims (1)
であって、 半導体ペレットは、アイランドに搭載され、その外周が
モールド樹脂で被覆されて樹脂封止されたものであり、 伝熱板は、半導体ペレットが搭載したアイランドに電気
的に絶縁されて接合され、その一端がモールド樹脂より
外部に露出されたものであることを特徴とする半導体装
置。(1) A semiconductor device having a semiconductor pellet and a heat transfer plate, in which the semiconductor pellet is mounted on an island, its outer periphery is covered with mold resin and sealed with resin, and the heat transfer plate is A semiconductor device characterized in that a semiconductor pellet is electrically insulated and bonded to an island on which a semiconductor pellet is mounted, and one end of the semiconductor pellet is exposed to the outside through a molding resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2275013A JPH04150060A (en) | 1990-10-12 | 1990-10-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2275013A JPH04150060A (en) | 1990-10-12 | 1990-10-12 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04150060A true JPH04150060A (en) | 1992-05-22 |
Family
ID=17549667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2275013A Pending JPH04150060A (en) | 1990-10-12 | 1990-10-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04150060A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005268757A (en) * | 2004-02-18 | 2005-09-29 | Nec Electronics Corp | Semiconductor device and method of manufacturing the same |
-
1990
- 1990-10-12 JP JP2275013A patent/JPH04150060A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005268757A (en) * | 2004-02-18 | 2005-09-29 | Nec Electronics Corp | Semiconductor device and method of manufacturing the same |
| JP4641423B2 (en) * | 2004-02-18 | 2011-03-02 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI508238B (en) | Chip thermal system | |
| JPH0846070A (en) | Integrated circuit package with diamond thermal radiator | |
| JP4023054B2 (en) | Electronic circuit unit | |
| JP2000040780A (en) | Heat radiating member of heat releasing element | |
| JPH0846134A (en) | Semiconductor device | |
| JPH04150060A (en) | Semiconductor device | |
| JPH04123462A (en) | Semiconductor mounting device | |
| JPS61144855A (en) | Package for semiconductor circuit | |
| JP4469101B2 (en) | Electronic circuit device having heat dissipation structure | |
| JP3684903B2 (en) | Mounting structure of hybrid integrated circuit | |
| JP2656328B2 (en) | Semiconductor device | |
| JPH06104355A (en) | Cooling liquid enclosing type semiconductor device | |
| CN217306113U (en) | Storage device with active heat dissipation function | |
| JPS6092642A (en) | Forced cooling device for semiconductor device | |
| JPH0715962B2 (en) | Semiconductor device | |
| JP2001210980A (en) | Electronic circuit unit | |
| JP3888031B2 (en) | Radiator | |
| JP2802009B2 (en) | Solid state relay | |
| JPS6329999A (en) | Electronic device module cooling structure | |
| JPS5918685Y2 (en) | Hybrid thick film integrated circuit device | |
| JPH0629580A (en) | Thermo module | |
| JPH04259246A (en) | Cooling mechanism for integrated circuit | |
| JPH1187576A (en) | Substrate | |
| JPH0831992A (en) | Semiconductor device using peltier element as its heat dissipating device | |
| JPS6167994A (en) | Sealed cooler |