JPH04149512A - Integrated semiconductor optical amplifier - Google Patents
Integrated semiconductor optical amplifierInfo
- Publication number
- JPH04149512A JPH04149512A JP27329290A JP27329290A JPH04149512A JP H04149512 A JPH04149512 A JP H04149512A JP 27329290 A JP27329290 A JP 27329290A JP 27329290 A JP27329290 A JP 27329290A JP H04149512 A JPH04149512 A JP H04149512A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optical
- optical amplifier
- inp
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 66
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 230000003321 amplification Effects 0.000 claims abstract description 19
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 19
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 8
- 230000004888 barrier function Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 description 7
- 238000005253 cladding Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は集積化光素子において、光スィッチもしくは光
導波路との集積化に好適な光増幅器に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical amplifier suitable for integration with an optical switch or an optical waveguide in an integrated optical device.
従来、集積化光増幅器の構造については、特願平１−１
７６０４において論じられている。Conventionally, the structure of an integrated optical amplifier has been disclosed in Japanese Patent Application No. 1-1.
7604.
上記従来技術は、光の進行方向と垂直な方向の光を光導
波路内に閉じ込めるためにリッジ型光導波路を採用して
いるが、増幅部での断面構造において、光を増幅するた
め、光増幅層が露出している点について配慮がされてお
らず、露出した光増幅層の部分で注入されたキャリア（
＠子及び正孔）が表面準位のために非発光に失なわれ、
光の増幅に寄与する割合が減少してしまうという問題が
あった・
本発明は、露出している光増幅層に注・入されたキャリ
アが非発光に失なわれる割合を減少させ、光増幅器の効
率を向上させること、即ち、注入キャリア量に対して、
得られる増幅度を大きくとれるようにすることを目的と
しており、さらに光導波路もしくはキャリア注入型光ス
イッチとの集積化に好適なりッジ型光増幅器を提供する
ことにある。The above conventional technology uses a ridge-type optical waveguide to confine light in a direction perpendicular to the direction of propagation of the light within the optical waveguide. No consideration was given to the exposed layer, and the injected carriers (
electrons and holes) are lost to non-emission due to surface states,
There has been a problem in that the proportion contributing to light amplification decreases. The present invention reduces the proportion of carriers injected into the exposed optical amplification layer that are lost to non-emission, and improves the optical amplifier. To improve the efficiency of injection, that is, with respect to the amount of injected carriers,
The object of the present invention is to provide a wedge-type optical amplifier that can obtain a large amplification degree and is suitable for integration with an optical waveguide or a carrier injection type optical switch.
上記目的を達成するために、光導波路との集積化に適し
た光増幅器の基本構造を変更することなく、光増幅層に
対してのみ選択的に働くエツチングを用いて意識的にサ
イドエッチを起こさせ、さらにマストランスポート現象
等を利用し、サイトエッチ部分を埋込んだものである。In order to achieve the above objective, we consciously caused side etching using etching that selectively acts only on the optical amplification layer, without changing the basic structure of the optical amplifier, which is suitable for integration with optical waveguides. In addition, a site-etched portion is embedded by utilizing the mass transport phenomenon.
マストランスポート現象とは、ＩｎＰカバーを基板とと
もに加熱すると結晶表面原子の移動により鋭角部分のな
まりが起こり、上記光増幅層のサイトエッチ部分のよう
な極小部分がＩｎＰにより埋込まれる現象である。The mass transport phenomenon is a phenomenon in which when the InP cover is heated together with the substrate, acute angle portions are rounded due to the movement of atoms on the crystal surface, and extremely small portions such as the site-etched portions of the light amplification layer are buried with InP.
光増幅層の両側が半導体材料で埋込まれるために露出し
た光増幅層部分がなくなるため、表面準位と関係した非
発光過程で失なわれるキャリアがなくなり、光増幅器の
効率が向上する。埋込に使用される半導体材料は光増幅
層よりも、よりエネルギー禁制帯幅の大きなものを使用
するため、注入されたキャリアは、エネルギー禁制帯幅
の小さな光増幅層に流れ込み、埋込部分による問題は起
こらない。Since both sides of the optical amplification layer are filled with semiconductor material, there are no exposed optical amplification layer parts, so there are no carriers lost in non-emission processes related to surface states, and the efficiency of the optical amplifier is improved. Since the semiconductor material used for embedding has a larger energy bandgap than the optical amplification layer, the injected carriers flow into the optical amplification layer, which has a small energy bandgap, and are No problems occur.
単にリッジ側面の露出を防ぐ目的であれば、リッジ側面
の埋込成長でも同じ結果が得られるが、空気の屈折率１
に対して屈折率がほぼ３である半導体材料を用いると、
光導波路の閉じ込め条件が変化してしまう。この欠点を
おぎなうために完全埋込型の光導波路と再設計した場合
においても、先導波層とクラッド層との屈折率差が大き
くとれないために、光は弱閉じ込めの条件となり、キャ
リア注入型光スイッチ部が有効に動作しなくなる。If the purpose is simply to prevent exposure of the ridge sides, the same result can be obtained by buried growth on the ridge sides, but the refractive index of air is 1.
When using a semiconductor material with a refractive index of approximately 3,
The confinement conditions of the optical waveguide will change. Even if a fully buried optical waveguide is redesigned to compensate for this drawback, the difference in refractive index between the leading wave layer and the cladding layer cannot be made large, resulting in weak confinement of light, resulting in a carrier-injection type optical waveguide. The optical switch section no longer operates effectively.
即ち、キャリア注入型光スイッチと光導波路に集積可能
な光増幅器がリッジ型構造を持つことは必然性を持つ。That is, it is inevitable that a carrier injection type optical switch and an optical amplifier that can be integrated into an optical waveguide have a ridge-type structure.
以下、本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図（ａ）は集積化光増幅器の断面構造を示したもの
である。本実施例では、ＩｎＰ基板６上に、ＬＰＥ法を
用い、ＩｎＧａＡｓＰ光導波路層５（吸収端波長λｇ＝
１．１５μｍ）、Ｉｎ、Ｐ障壁層４、ＩｎＧａＡｓＰ光
増幅層３（吸収端波長λｇ ＝ 、１ 、３ μｍ ）
ＩｎＰクラッド層２、ＩｎＧａＡｓＰキャップ層１．を
多層成長し、後に光増幅器として利用する部分のみに８
１０２保護膜を付けて残りの部分の上部４層、即ちＩｎ
ＧａＡｓＰキャップ層１、ＩｎＰクラッド層２、ＩｎＧ
ａＡｓＰ光増幅層３、ＩｎＰ障壁層４を、各々に対する
選択エツチングにより除去した。FIG. 1(a) shows a cross-sectional structure of an integrated optical amplifier. In this example, an InGaAsP optical waveguide layer 5 (absorption edge wavelength λg=
1.15 μm), In, P barrier layer 4, InGaAsP optical amplification layer 3 (absorption edge wavelength λg = 1, 3 μm)
InP cladding layer 2, InGaAsP capping layer 1. is grown in multiple layers, and only the part that will be used as an optical amplifier later has 8
102 protective film and the remaining upper four layers, namely In
GaAsP cap layer 1, InP cladding layer 2, InG
The aAsP optical amplification layer 3 and the InP barrier layer 4 were removed by selective etching.
次に保護膜の付いている光増幅器部分を除いた部分にＩ
ｎＰクラット層２、ＩｎＧａＡｓＰ１を再成長させた。Next, I
The nP crat layer 2, InGaAsP1, was regrown.
この後、通常のりソグラフィ技術とエツチング技術によ
り第１図（ａ）及び（ｂ）に示す形状の光増幅器及び光
導波路を形成した。Thereafter, an optical amplifier and an optical waveguide having the shapes shown in FIGS. 1(a) and 1(b) were formed by ordinary lithography and etching techniques.
さらに第１図に示すようにＩｎＧａＡｓＰ光増幅層３の
両側面を埋込むために＋ ＩｎＧａＡｓＰ光増幅層３に
のみ選択的に働く選択エツチングを行い、意識的なサイ
ドエッチ部分を形成した。このサイドエッチ部分をマス
トランスポートにより埋込む。この埋込まれた部分がＩ
ｎＰ埋込Ｍ７である。この部分が従側の第２図と異なる
。Furthermore, as shown in FIG. 1, in order to bury both side surfaces of the InGaAsP optical amplification layer 3, selective etching was performed which selectively acts only on the +InGaAsP optical amplification layer 3 to form intentional side etched portions. This side etched portion is filled in by mass transport. This embedded part is I
It is nP embedded M7. This part differs from the slave side in FIG. 2.
第１図（ａ）の光増幅器と同図（ｂ）の光導波路とは第
１回目の結晶成長において形成された共通の光導波路層
３によって接続されており、共通のリッジ構造を持つた
め接続部の損失が１ｄＢ以下に抑えることができた。さ
らに表面準位による非発光過程に流れるキャリアが少な
くなったため従来例に比べて同一利得を得るための注入
電流を減少させることができた。The optical amplifier in FIG. 1(a) and the optical waveguide in FIG. 1(b) are connected by a common optical waveguide layer 3 formed in the first crystal growth, and are connected because they have a common ridge structure. We were able to suppress the loss to less than 1dB. Furthermore, fewer carriers flow through non-emission processes due to surface states, making it possible to reduce the injection current needed to obtain the same gain compared to the conventional example.
本発明によれば表面準位により非発光再結合に寄与する
キャリアの量を減らすことができるため光増幅器の効率
を上げることができる。また表面準位を流れる電流リー
クパスによって生ずる結晶欠陥の内部進行がなくなるた
め長期使用に対する信頼性を向上することができる。さ
らに共通のりッジ構造を持ち、共通の光導波路層を持つ
構造が作れるため簡便かつ接続損失の少ない光導波路と
光増幅器との集積が図れる。According to the present invention, the efficiency of the optical amplifier can be increased because the amount of carriers contributing to non-radiative recombination can be reduced by surface states. In addition, since internal progress of crystal defects caused by current leakage paths flowing through surface states is eliminated, reliability for long-term use can be improved. Furthermore, since a structure having a common ridge structure and a common optical waveguide layer can be created, it is possible to easily integrate an optical waveguide and an optical amplifier with less connection loss.
第１図（ａ）は本発明の一実施例であるリッジ型光増幅
器の断面図、第１図（ｂ）は第１図で示した光増幅器と
整合集積できる光導波路の断面図、第２図は従来例の光
素子の断面図である。
１ ＝４ｎＧａＡｓＰキャップ層、２ ・Ｉ ｎ Ｐク
ラッド層、３ ・＝ＩｎＧａＡｓＰ光増幅層、４ ・＝
Ｉ ｎ Ｐ障壁層、５・・ＩｎＧａＡｓＰ光導波層、
６− Ｉ ｎ Ｐ基板、７− Ｉ ｎ Ｐ第１ 図
（α）
（ｂ）FIG. 1(a) is a cross-sectional view of a ridge-type optical amplifier which is an embodiment of the present invention, FIG. 1(b) is a cross-sectional view of an optical waveguide that can be integrated and integrated with the optical amplifier shown in FIG. The figure is a sectional view of a conventional optical element. 1 = 4nGaAsP cap layer, 2 ・InP cladding layer, 3 ・=InGaAsP optical amplification layer, 4 ・=
InP barrier layer, 5...InGaAsP optical waveguide layer,
6-InP substrate, 7-InP Figure 1 (α) (b)
Claims (1)
、リッジ側面に露出した光増幅層のみを選択にサイドス
イッチせしめ、光増幅層よりも禁制帯幅の大きな半導体
材料でサイドエッチ部分のみを埋込むことを特徴とする
集積化半導体光増幅器。 ２、請求項１記載の光増幅器を光導波路とキャリア注入
型光スイッチと完全モノリシックに集積したことを特徴
とする集積化半導体素子。[Claims] 1. In a traveling wave semiconductor optical amplifier having a ridge structure, only the optical amplification layer exposed on the side surface of the ridge is selectively side-switched, and a semiconductor material having a larger forbidden band width than the optical amplification layer is used as a side switch. An integrated semiconductor optical amplifier characterized in that only the etched portion is buried. 2. An integrated semiconductor device characterized in that the optical amplifier according to claim 1 is completely monolithically integrated with an optical waveguide and a carrier injection type optical switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27329290A JPH04149512A (en) | 1990-10-15 | 1990-10-15 | Integrated semiconductor optical amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27329290A JPH04149512A (en) | 1990-10-15 | 1990-10-15 | Integrated semiconductor optical amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04149512A true JPH04149512A (en) | 1992-05-22 |
Family
ID=17525822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27329290A Pending JPH04149512A (en) | 1990-10-15 | 1990-10-15 | Integrated semiconductor optical amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04149512A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7072557B2 (en) | 2001-12-21 | 2006-07-04 | Infinera Corporation | InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core |
-
1990
- 1990-10-15 JP JP27329290A patent/JPH04149512A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7072557B2 (en) | 2001-12-21 | 2006-07-04 | Infinera Corporation | InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core |
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