JPH04137615A - Method of confirmation of continuity - Google Patents

Method of confirmation of continuity

Info

Publication number
JPH04137615A
JPH04137615A JP25893090A JP25893090A JPH04137615A JP H04137615 A JPH04137615 A JP H04137615A JP 25893090 A JP25893090 A JP 25893090A JP 25893090 A JP25893090 A JP 25893090A JP H04137615 A JPH04137615 A JP H04137615A
Authority
JP
Japan
Prior art keywords
wafer
conductive
contact
continuity
needle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25893090A
Other languages
Japanese (ja)
Inventor
Tatsuya Kunioka
達也 國岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP25893090A priority Critical patent/JPH04137615A/en
Publication of JPH04137615A publication Critical patent/JPH04137615A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To securely confirm wafer grounding during waiting and image drawing by insulating grounding conductive needles except selected one, applying voltage to the selected grounding conductive needle, and reading the potential of the wafer at that time with a non-contact electrometer. CONSTITUTION:Contact switches 7 of conductive needles except for that of one conductive needle to confirm continuity is switched over to terminal (a). The contact switch 7 of the selected conductive needle 1 is switched over to terminal (b) and appropriate voltage is applied from a DC voltage source 6 to the conductive needle 1. When the indication of a non-contact electrometer 4 at that time approximates to the voltage value applied from the power source 6, it is judged that the conductive needle 1 is connected to a wafer 2. After all the conductive needles 1 are examined, the contact switches 7 of the conductive needles 1 are switched over to terminal (c) and the wafer 2 is grounded. When the potential of the wafer 2 is continuously measured with the non-contact electrometer 4 during image drawing after then, changes of the potential of the wafer caused by electrification occurring when the wafer 2 lifts from the ground are detected.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、荷電ビーム描画装置においてウェハの電位を
非接触で測定し、この測定結果によりウェハと接地用導
通針とが導通しているか否かを判別する導通確認方法に
関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention measures the potential of a wafer in a charged beam lithography system without contact, and determines whether or not the wafer and a ground conductive needle are electrically connected based on the measurement results. The present invention relates to a continuity confirmation method for determining whether

[従来の技術] 荷電ビーム描画装置において、描画中ウェハの接地がと
れていないと、荷電粒子がウェハに蓄積される。このた
め、ウェハは時間の経過とともに荷電粒子と同符号に帯
電してゆく。
[Prior Art] In a charged beam lithography system, if a wafer is not grounded during lithography, charged particles will accumulate on the wafer. Therefore, the wafer becomes charged with the same sign as the charged particles over time.

第4図はウェハの帯電が荷電ビームに及ぼす影響を説明
する説明図である。同図において、2はウェハ、9は荷
電ビーム、13はスイッチ、14は電荷である。なお、
荷電ビーム9中の実線部分はウェハが帯電してるときの
実際の荷電ビームの軌跡を示し、点綴部分はウェハが帯
電していないときの理想の荷電ビームの軌跡を示してい
る。そして、ウェハが帯電すると、第4図に示すように
、静電力により荷電ビーム9の軌道が影響を受け、描画
の位置が誤差を生じる。このため、ウェハ2は、スイッ
チ13を閉じることにより確実に接地する必要がある。
FIG. 4 is an explanatory diagram illustrating the influence that wafer charging has on a charged beam. In the figure, 2 is a wafer, 9 is a charged beam, 13 is a switch, and 14 is a charge. In addition,
The solid line portion of the charged beam 9 indicates the actual trajectory of the charged beam when the wafer is charged, and the dotted portion indicates the ideal trajectory of the charged beam when the wafer is not charged. When the wafer is charged, as shown in FIG. 4, the trajectory of the charged beam 9 is affected by electrostatic force, causing an error in the writing position. Therefore, the wafer 2 needs to be reliably grounded by closing the switch 13.

荷電ビーム描画装置において描画されるウェハ2は、そ
のまま描画用ステージに搭載すると酸化膜等の絶縁体が
表面に設けられることから電気的な接地がとれずに描画
される状況にある。このため、従来は、第5図に示すよ
うに、ステージ(絶縁体)3に載置されたウェハ2上に
、直接、導通針1を立てて接地をとっている。実際には
、ウェハ2の表面には絶縁体であるレジストが塗布され
ているため、導通針1はこの膜を貫通してウェハ2に接
触させる必要があるが、導通針1の先端部へのレジスト
の固着等により接触不良を起こすことが多い。このため
、従来は、第6図のように、複数の導通針1をウェハ2
上に立てて導通針1間に導通確認用直流電圧電源を印加
して導通確認用電流計10により導通針1間の導通を確
認し、確実に導通のとれている導通針lを接点切替器8
により切り換えて接地に落としている。
If the wafer 2 to be imaged in a charged beam lithography apparatus is mounted on a lithography stage as it is, an insulator such as an oxide film will be provided on the surface of the wafer 2, so that wafer 2 will be lithographically drawn without being electrically grounded. For this reason, conventionally, as shown in FIG. 5, a conductive needle 1 is placed directly on the wafer 2 placed on a stage (insulator) 3 for grounding. In reality, the surface of the wafer 2 is coated with a resist, which is an insulator, so the conduction needle 1 needs to penetrate through this film and come into contact with the wafer 2. Poor contact often occurs due to resist sticking. For this reason, conventionally, as shown in FIG.
Apply a DC voltage power source for continuity checking between the continuity needles 1 by placing them upright, check the continuity between the continuity needles 1 using the continuity confirmation ammeter 10, and then connect the continuity needles 1 that are sure to have continuity to the contact switch. 8
It is switched and grounded.

[発明が解決しようとする課題] 従来の技術では、複数の導通針1のうち1本のみがウェ
ハ2と導通がとれている場合と、全ての導通針1が導通
がとれていない場合との判別を行うことができないとい
う問題があった。また、描画中にウェハ2が接地されて
いるか否かを確認することは、ウェハ2に直接電流を流
さなければならないという点から困難であるという問題
もあった。
[Problems to be Solved by the Invention] In the conventional technology, there are two cases: when only one of the plurality of conductive needles 1 is electrically connected to the wafer 2, and when all the conductive needles 1 are not electrically conductive. There was a problem that discrimination could not be performed. Another problem is that it is difficult to check whether or not the wafer 2 is grounded during drawing because current must be passed directly through the wafer 2.

[課題を解決するための手段] このような課題を解決するために本発明に係る導通確認
方法は、ウェハの電位を非接触で測定し、この測定結果
によりウェハと接地用導通針とが導通しているか否かを
判別するようにした方法である。すなわち、R電ビーム
描画装置で描画されるウェハを接地するための複数の接
地用導通針を備え、ウェハとの導通状態を確認するため
に選択された1つの接地用導通針以外の接地用導通針を
絶縁状態に設定するとともに、選択された1つの接地用
導通針に電圧を印加し、このときのウェハの電位を非接
触プローブを介して非接触電位計で読み取ることにより
ウェハと接地用導通針との導通を確認するようにした導
通確認方法である。
[Means for Solving the Problems] In order to solve such problems, the continuity confirmation method according to the present invention measures the potential of the wafer without contact, and based on the measurement result, it is determined that the wafer and the grounding conductive needle are connected to each other. This method determines whether or not the That is, it is equipped with a plurality of ground conductive needles for grounding the wafer to be drawn with the R electric beam lithography system, and the ground conductive needles other than the one ground conductive needle selected to confirm the state of conduction with the wafer are provided. While setting the needles in an insulating state, voltage is applied to one selected grounding conduction needle, and the potential of the wafer at this time is read with a non-contact electrometer via a non-contact probe, thereby establishing continuity between the wafer and the grounding needle. This is a continuity confirmation method that checks continuity with the needle.

[作用コ 導通を確認したい接地用導通針に電圧を印加し、その時
のウェハ電位を非接触電位計で測定すると、ウェハと接
地用導通針の導通がとれている時には非接触電位計には
印加した電圧が表示される。これによりウェハとの導通
状態を接地用導通針1本毎に確認することが可能となる
。この結果、ウェハとの導通が確認された接地用導通針
を接地に落とした後の描画中も、引き続いてウェハの電
位を非接触電位計で測定を行うと、ウェハが接地から浮
くことに起因する帯電によるウェハ電位の変化も検出で
き、従って描画中においてもウェハの接地状態の判別を
行うことができる。
[Operation] Apply a voltage to the grounding conductive needle whose continuity you want to check, and measure the wafer potential at that time with a non-contact electrometer. The current voltage will be displayed. This makes it possible to check the conduction state with the wafer for each ground conduction needle. As a result, when the wafer potential was subsequently measured with a non-contact electrometer even after the grounding needle, which had been confirmed to have continuity with the wafer, was dropped to the ground, it was found that the wafer was floating from the ground. It is also possible to detect changes in the wafer potential due to charging, and therefore it is possible to determine whether the wafer is grounded even during writing.

[実施例コ 次に、本発明について図面を参照して説明する。[Example code] Next, the present invention will be explained with reference to the drawings.

第1図は、本発明に係る導通確認方法を適用した装置の
一実施例を示す構成図である。同図において、第4図〜
第6図の従来の説明図と同等部分は同一符号を付してそ
の説明を省略する。第1図において、4は非接触式電位
計(静電電位差計)5は非接触式電位差計用プローブ、
6は導通検査用直流電圧源、7は接点切替器である。
FIG. 1 is a configuration diagram showing an embodiment of a device to which a continuity checking method according to the present invention is applied. In the same figure, Figure 4~
Portions equivalent to those in the conventional explanatory diagram of FIG. 6 are given the same reference numerals, and their explanation will be omitted. In FIG. 1, 4 is a non-contact potentiometer (electrostatic potentiometer), 5 is a probe for a non-contact potentiometer,
6 is a DC voltage source for continuity testing, and 7 is a contact switch.

次に、以上のように構成された装置の動作を説明する。Next, the operation of the apparatus configured as above will be explained.

まず、導通針1が複数本ある場合は、導通状態を確認し
ようとする1本の導通針以外の接点切替器7を端子a側
に切り換える。これは、導通針lが複数本ある場合に、
導通を確認しようとする導通針以外のものを絶縁してお
くために行うものである。
First, if there are a plurality of conductive needles 1, the contact switch 7 of the conductive needles other than the one conductive needle whose conductive state is to be checked is switched to the terminal a side. This means that when there are multiple conduction needles l,
This is done to insulate everything other than the continuity needle that is being tested for continuity.

そして、現在注目している1本の導通針1の接点切替器
7を端子す側に切り換え、適当な電圧■を導通検査用直
流電圧源6からこの導通針1に印加する。このときの非
接触式電位計4の読みVRがほぼ上記した導通用直流電
圧電源6から印加された電圧値Vに等しいとき、現在注
目している導通針1がウェハ2と導通していると判断す
る。この時の電圧値は実際には、導通針1の線抵抗のた
め、印加電圧値■より少し落ち、例えば30V印加した
場合にはそのドロップ電圧分は1■以内である。ただし
、この場合非接触式電位計用プローブ5はウェハ2の表
面に近接して配置されているとする。
Then, the contact switch 7 of the current continuity needle 1 of interest is switched to the terminal side, and an appropriate voltage (2) is applied from the continuity testing DC voltage source 6 to this continuity needle 1. When the reading VR of the non-contact electrometer 4 at this time is approximately equal to the voltage value V applied from the above-mentioned DC voltage power supply 6 for continuity, it is assumed that the continuity needle 1 of interest is electrically connected to the wafer 2. to decide. The voltage value at this time is actually slightly lower than the applied voltage value (2) due to the line resistance of the conductive needle 1. For example, when 30V is applied, the voltage drop is within 1 (2). However, in this case, it is assumed that the non-contact electrometer probe 5 is placed close to the surface of the wafer 2.

すなわち、第2図に示すように、導通を確認したい導通
針1に電圧を印加し、その時のウェハ2の電位を非接触
式電位計4で測定すると、ウェハ2と導通針1との導通
がとれている時には非接触式電位計4には印加した電圧
が表示される。これにより導通状態を1本づつ確認する
ことが可能となる。こうして、全ての導通針1について
の確認が終了したら、それぞれの導通針1の接点切替器
7を端子C側に切り換えてウェハ2を接地に落とす。
That is, as shown in FIG. 2, when a voltage is applied to the conductive needle 1 whose conductivity is to be checked and the potential of the wafer 2 at that time is measured with a non-contact electrometer 4, it is determined that the conductivity between the wafer 2 and the conductive needle 1 is confirmed. When the voltage is off, the applied voltage is displayed on the non-contact electrometer 4. This makes it possible to check the conduction state one by one. When all the conduction needles 1 have been checked in this way, the contact switch 7 of each conduction needle 1 is switched to the terminal C side and the wafer 2 is grounded.

そして、ウェハとの導通が確認された導通針1を接地に
落とした後の描画中も、第3図に示すように、ウェハ2
の電位を非接触電位計4で測定を続けると、ウェハ2が
接地から浮いたときに生ずる帯電によるウェハ電位の変
化を検出できる。こうして、ウェハ2の接地状態が描画
中においても判別できることになる。
Even during drawing after the conductive needle 1, which has been confirmed to be electrically conductive with the wafer, is dropped to the ground, the wafer 2 remains as shown in FIG.
By continuing to measure the potential of the wafer with the non-contact electrometer 4, it is possible to detect a change in the wafer potential due to charging that occurs when the wafer 2 is lifted from the ground. In this way, the grounding state of the wafer 2 can be determined even during writing.

このようにして、待機中における全ての導通針1につい
てその導通の確認を行うことができるとともに、描画中
においても同様にウェハ2の接地状態の確認を行うこと
ができる。
In this way, it is possible to check the conductivity of all the conduction needles 1 during standby, and also to check the grounding state of the wafer 2 during writing.

なお、本実施例においては、導通の確認に直流電圧源を
使用したが、交流電圧源を用いても同様な効果を得るこ
とができる。
Note that in this embodiment, a DC voltage source is used to confirm continuity, but the same effect can be obtained by using an AC voltage source.

[発明の効果] 以上説明したように、本発明に係る導通確認方法によれ
ば、ウェハ2接地の確認を待機中、描画中を問わず確実
に行うことができる。従って、この導通確認方法を電子
ビーム描画装置等の荷電ビーム描画装置に適用すること
が可能となり、装置の稼働率および描画の歩留りの大幅
な向上が期待できるという効果がある。
[Effects of the Invention] As described above, according to the continuity checking method according to the present invention, the grounding of the wafer 2 can be reliably checked regardless of whether it is on standby or during writing. Therefore, this continuity checking method can be applied to a charged beam lithography apparatus such as an electron beam lithography apparatus, and there is an effect that a significant improvement in the operating rate of the apparatus and the yield of lithography can be expected.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る導通確認方法を適用した装置の一
実施例を示す構成図、第2図、第3図はこの導通確認の
動作を説明する説明図、第4図〜第6図は従来の導通確
認方法を説明する説明図である。 1・・・・導通針、2・・・・ウェハ、3・・ステージ
(絶縁体)、4・・・・非接触式電位計(静電電位差計
)、5・・・・非接触式電位差計用プローブ、6・・・
・導通検査用直流電圧源、7・・・・接点切替器、9・
・・・荷電ビーム。 特許出願人 日本電信電話株式会社 代理犬山川 政樹 第 図 第 図 第 図 第 図 第 図
FIG. 1 is a configuration diagram showing an embodiment of a device to which the continuity checking method according to the present invention is applied, FIGS. 2 and 3 are explanatory diagrams illustrating the operation of this continuity checking, and FIGS. 4 to 6 FIG. 2 is an explanatory diagram illustrating a conventional continuity confirmation method. 1... Conductive needle, 2... Wafer, 3... Stage (insulator), 4... Non-contact type electrometer (electrostatic potentiometer), 5... Non-contact type potential difference Measuring probe, 6...
・DC voltage source for continuity testing, 7...Contact switch, 9.
...Charged beam. Patent Applicant: Nippon Telegraph and Telephone Corporation Agent Masaki Inuyamakawa

Claims (1)

【特許請求の範囲】[Claims] 荷電ビーム描画装置で描画されるウェハを接地するため
の複数の接地用導通針を備え、前記ウェハとの導通状態
を確認するために選択された1つの接地用導通針以外の
接地用導通針を絶縁状態に設定するとともに、選択され
た1つの接地用導通針に電圧を印加し、このときのウェ
ハの電位を非非接触プローブを介して接触電位計で読み
取ることにより前記ウェハと接地用導通針との導通を確
認することを特徴とした導通確認方法。
A plurality of ground conductive needles are provided for grounding a wafer to be drawn by a charged beam lithography device, and the ground conductive needles other than one ground conductive needle selected to confirm the conductive state with the wafer are provided. While setting the wafer to an insulated state, a voltage is applied to one selected grounding conductive needle, and the potential of the wafer at this time is read with a contact electrometer via a non-contact probe, thereby connecting the wafer and the grounding conductive needle. A continuity confirmation method characterized by confirming continuity with.
JP25893090A 1990-09-28 1990-09-28 Method of confirmation of continuity Pending JPH04137615A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25893090A JPH04137615A (en) 1990-09-28 1990-09-28 Method of confirmation of continuity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25893090A JPH04137615A (en) 1990-09-28 1990-09-28 Method of confirmation of continuity

Publications (1)

Publication Number Publication Date
JPH04137615A true JPH04137615A (en) 1992-05-12

Family

ID=17327018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25893090A Pending JPH04137615A (en) 1990-09-28 1990-09-28 Method of confirmation of continuity

Country Status (1)

Country Link
JP (1) JPH04137615A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258536A (en) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp Electron beam applied device
JP2007318824A (en) * 2006-05-23 2007-12-06 Matsushita Electric Ind Co Ltd Driving device for motor-driven compressor
JP2010074094A (en) * 2008-09-22 2010-04-02 Nuflare Technology Inc Substrate cover

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258536A (en) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp Electron beam applied device
JP2007318824A (en) * 2006-05-23 2007-12-06 Matsushita Electric Ind Co Ltd Driving device for motor-driven compressor
JP2010074094A (en) * 2008-09-22 2010-04-02 Nuflare Technology Inc Substrate cover

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