JP2007258536A - Electron beam applied device - Google Patents

Electron beam applied device Download PDF

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JP2007258536A
JP2007258536A JP2006082648A JP2006082648A JP2007258536A JP 2007258536 A JP2007258536 A JP 2007258536A JP 2006082648 A JP2006082648 A JP 2006082648A JP 2006082648 A JP2006082648 A JP 2006082648A JP 2007258536 A JP2007258536 A JP 2007258536A
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sample
resistance
current detection
electron beam
contact
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Noboru Maezawa
昇 前沢
Katsuo Oki
克夫 大木
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron-beam applied device capable of determining correctly whether or not a contact state is good between an earth needle and a sample. <P>SOLUTION: The electron-beam applied device has a plurality of earth needles for being brought in contact with a front end surface of a sample; a current detection resistor connected to one of the earth needles; and also a determination means for calculating a resistance value of the sample containing a contact resistance from a potential difference between a sample resistance containing the contact resistance of the earth needle and the current detection resistance, and for determining whether or not the contact state between the earth needle and the sample is good, from the resistance value. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体製造装置や半導体検査装置などの電子線応用装置に係わり、ウエハやマスクなどを含む試料に用いるアース針の接触が良好か否かを判定することに関する。   The present invention relates to an electron beam application apparatus such as a semiconductor manufacturing apparatus or a semiconductor inspection apparatus, and relates to determining whether or not the contact of a ground needle used for a sample including a wafer and a mask is good.

試料に接触させるアース針の接触が良好か否かの要否判定については、特開2005−127719号公報(特許文献1)に示されている。   Judgment on whether or not the contact of the grounding needle to be brought into contact with the sample is good is disclosed in Japanese Patent Laid-Open No. 2005-127719 (Patent Document 1).

特許文献1に示すアース接続の要否判定は、アース針を試料の端面に刺して試料がアースに接続されていることを確認する方法としては、試料の端面に刺した複数のアース針の一本をアースラインから切り離し、これに電流制限抵抗を介して電圧を印加して電流を流し、試料のアース針間の電圧とハードで設定された基準電圧の大小比較を行うコンパレータICによって、試料のアース針間の電圧が基準電圧より小さければアースチェックOK、基準電圧より大きければアースチェックNGで判定を行う方法が取られている。   The determination of the necessity of ground connection shown in Patent Document 1 is a method for confirming that the sample is connected to the ground by inserting the ground needle into the end surface of the sample. The book is disconnected from the earth line, a voltage is applied to the current through a current limiting resistor, current flows, and the comparator IC that compares the voltage between the earth voltage of the specimen and the reference voltage set by hardware is used to compare the sample. If the voltage between the ground needles is lower than the reference voltage, the ground check is OK. If the voltage is higher than the reference voltage, the ground check NG is used.

特開2005−127719号公報JP 2005-127719 A

電子線を試料に照射する電子線応用装置において、試料をアースに接続するために試料の端面に刺したアース針によって、確実に試料のアースが取れていることの確認を上記の方法で行っている。   In an electron beam application device that irradiates a sample with an electron beam, confirm that the sample is securely grounded by the above-mentioned method using a ground needle inserted into the end surface of the sample to connect the sample to the ground. Yes.

このため、試料に流す微弱な電流が試料に刺したアース針以外の経路でショートしていても判定基準電圧以下となってしまい、コンパレータICでは電圧の比較だけを行っているためにアース針で試料のアースが取れていると誤判断してしまう。   For this reason, even if a weak current flowing through the sample is short-circuited by a route other than the ground needle stuck in the sample, the voltage becomes lower than the determination reference voltage. Since the comparator IC only performs voltage comparison, The sample is misjudged to be grounded.

そして、判断した結果の情報だけでは試料のアースを取るために試料の端面に刺したアース針が問題なく試料に刺さっているかどうかの把握が出来なかった。   And it was not possible to grasp whether the grounding needle stuck in the end face of the sample was stuck in the sample without any problem only by the information of the judged result.

また、試料を変更した場合には試料の抵抗値が異なるために、コンパレータICで比較している基準電圧の設定を変更しなければならない。   Further, when the sample is changed, the resistance value of the sample is different, so the setting of the reference voltage compared with the comparator IC must be changed.

上記に問題に対処し、本発明は、アース針と試料との接触状態が良好か否かを誤りなく判定できる電子線応用装置を提供することを目的とする。   The present invention addresses the above problems, and an object of the present invention is to provide an electron beam application apparatus that can determine without error whether or not the contact state between a ground needle and a sample is good.

本発明は、試料の表側端面に接触させる複数のアース針と、前記アース針の一つに接続される電流検出抵抗とを有し、前記アース針の接触抵抗を含む試料の抵抗と電流検出抵抗との電位差より前記接触抵抗を含む試料の抵抗値を計算し、前記抵抗値より前記アース針と前記試料との接触状態が良好か否かを判定する判定手段を有することを特徴とする。   The present invention has a plurality of grounding needles to be brought into contact with the front end surface of the sample, and a current detection resistor connected to one of the grounding needles, and the resistance of the sample and the current detection resistance including the contact resistance of the grounding needle And determining means for determining whether or not the contact state between the grounding needle and the sample is good based on the resistance value.

本発明によれば、アース針と試料との接触状態が良好か否かを誤りなく判定される。   According to the present invention, it is determined without error whether or not the contact state between the ground needle and the sample is good.

本発明を適用する電子線応用装置の一例として、図1には電子線描画装置を示す。   As an example of an electron beam application apparatus to which the present invention is applied, FIG. 1 shows an electron beam drawing apparatus.

図2には本発明のアースチェック抵抗測定回路の概略図を示す。   FIG. 2 shows a schematic diagram of the earth check resistance measuring circuit of the present invention.

図3には試料ホルダ115上の試料とアース針との接触図を示す。   FIG. 3 shows a contact diagram between the sample on the sample holder 115 and the ground needle.

まず、図1に示す電子線描画装置の概要から説明する。   First, the outline of the electron beam drawing apparatus shown in FIG. 1 will be described.

電子線描画装置の鏡体は、上部に電子銃1を有する。電子銃1から放出された電子ビームは、第一成形開口2、成形偏向器3、成形レンズ4を通過する。さらに、電子ビームは、第二成形開口5、ブランキング電極6、成形ビーム7、縮小レンズ8、ブランキング絞り9、対物レンズ10、対物偏向器11を通過して試料13に照射される。   The mirror body of the electron beam drawing apparatus has an electron gun 1 on the top. The electron beam emitted from the electron gun 1 passes through the first shaping opening 2, the shaping deflector 3, and the shaping lens 4. Further, the electron beam passes through the second shaping aperture 5, the blanking electrode 6, the shaping beam 7, the reduction lens 8, the blanking stop 9, the objective lens 10, and the objective deflector 11 and is irradiated on the sample 13.

反射電子検出器12は、試料13から反射する反射電子を検知する。試料13は、校正マーク14の位置を確認して位置の補正が行なわれる。試料ステージ15は、前後方向、左右方向、上下方向の移動して試料13を運ぶ。   The reflected electron detector 12 detects reflected electrons reflected from the sample 13. The position of the sample 13 is corrected by confirming the position of the calibration mark 14. The sample stage 15 carries the sample 13 by moving in the front-rear direction, the left-right direction, and the up-down direction.

成形偏向制御回路16は、成形偏向器3を制御して電子ビームの絞りを調整する。ブランキング制御回路17は、ブランキング電極6のブランキング作用を制御する。対物偏向制御回路18は、対物レンズ10、対物偏向器11を制御する。信号処理回路19は、反射電子の信号を処理する。ステージ制御回路20は、試料ステージ15の移動を制御する。   The shaping deflection control circuit 16 controls the shaping deflector 3 to adjust the aperture of the electron beam. The blanking control circuit 17 controls the blanking action of the blanking electrode 6. The objective deflection control circuit 18 controls the objective lens 10 and the objective deflector 11. The signal processing circuit 19 processes the reflected electron signal. The stage control circuit 20 controls the movement of the sample stage 15.

制御計算機21は、電子描画装置の動作制御を全体的に制御する。この制御計算機21の上位になる上位計算機は、電子描画に関する包括的な管理を行なう。   The control computer 21 controls the overall operation control of the electronic drawing apparatus. The host computer that is above the control computer 21 performs comprehensive management related to electronic drawing.

図2に示すアースチェック抵抗測定回路について述べる。   The earth check resistance measuring circuit shown in FIG. 2 will be described.

電源101は基準電圧を供給する。第1のセレクタ105は、電流検出抵抗を選択して抵抗測定レンジを切替えている。すなわち、第1のセレクタ105は、電流検出抵抗A103、電流検出抵抗B104を択一的に選択し、試料13の抵抗値に合うレンジで測定が行なわれる。   The power supply 101 supplies a reference voltage. The first selector 105 selects the current detection resistor and switches the resistance measurement range. That is, the first selector 105 alternatively selects the current detection resistor A103 and the current detection resistor B104, and performs measurement in a range that matches the resistance value of the sample 13.

第2のセレクタ106は、基準抵抗102と試料13のアースチェック抵抗を測定するために切替えるものであり、通常は基準抵抗102側が選択されている。   The second selector 106 is switched to measure the reference resistance 102 and the ground check resistance of the sample 13, and the reference resistance 102 side is normally selected.

基準抵抗102を測定するときは第1のセレクタ105を電流検出抵抗A103側の抵抗測定レンジに切替えて電源101から基準電圧を供給すると、その電流は電流検出抵抗A103を経由し、基準抵抗102を通って電源101へ戻って来ることで電流検出抵抗A103の両端に生じる電位差を差動増幅回路111に入力し、その出力をA/D変換112でA/D変換した値と抵抗測定回路定数とから制御マイコン113で演算を行って基準抵抗値を求める。   When measuring the reference resistance 102, when the first selector 105 is switched to the resistance measurement range on the current detection resistor A 103 side and a reference voltage is supplied from the power supply 101, the current passes through the current detection resistor A 103, and the reference resistance 102 is The potential difference generated at both ends of the current detection resistor A103 by returning to the power source 101 is input to the differential amplifier circuit 111, and the output is A / D converted by the A / D converter 112 and the resistance measurement circuit constant. Then, the control microcomputer 113 calculates the reference resistance value.

差動増幅回路111の+端子には定抵抗108が、−端子には定抵抗107が設けられてる。この定抵抗108、107を介して電位差は入力される。   A constant resistance 108 is provided at the + terminal of the differential amplifier circuit 111, and a constant resistance 107 is provided at the − terminal. The potential difference is input through the constant resistors 108 and 107.

この求められた基準抵抗値は、アースチェック抵抗測定回路のバラツキ等で基準抵抗102の値からずれているので、このアースチェック抵抗測定回路のバラツキを補正する為の補正値を求める。   Since the obtained reference resistance value deviates from the value of the reference resistance 102 due to variations in the earth check resistance measurement circuit, etc., a correction value for correcting variations in the earth check resistance measurement circuit is obtained.

そして、試料13の抵抗測定は、第1のセレクタ105を電流検出抵抗A103側の抵抗測定レンジに、第2のセレクタ106を試料抵抗測定側にそれぞれ切替えてから、基準抵抗値の測定と同様にして電流検出抵抗A103の両端の電位差をA/D変換112でA/D変換した値と抵抗測定回路定数と補正値を使用してアースチェック抵抗値の計算を行う。   Then, the resistance measurement of the sample 13 is performed in the same manner as the measurement of the reference resistance value after switching the first selector 105 to the resistance measurement range on the current detection resistor A103 side and the second selector 106 to the sample resistance measurement side. Then, the ground check resistance value is calculated using the value obtained by A / D converting the potential difference between both ends of the current detection resistor A103, the resistance measurement circuit constant, and the correction value.

この計算結果と上位計算機から設定される閾値(抵抗値)とを比較して、試料がアース針を通してアースラインに接続されているかどうかの判断を行っている。   This calculation result is compared with a threshold value (resistance value) set by the host computer to determine whether the sample is connected to the earth line through the earth needle.

上位計算機は、ワークステーション等のコンピュータで、閾値(抵抗値)をパラメータ値として格納している。オペレータが閾値(抵抗値)を上位計算機に設定すると同時に制御マイコン113に設定格納される。この制御マイコン113で、閾値(抵抗値)と比較してアースチェック抵抗値の良・否が判定される。   The host computer is a computer such as a workstation and stores a threshold value (resistance value) as a parameter value. The operator sets and stores the threshold value (resistance value) in the control microcomputer 113 simultaneously with the host computer. The control microcomputer 113 determines whether the earth check resistance value is good or not compared with a threshold value (resistance value).

本実施例は、アースチェック抵抗測定回路内に備えた基準抵抗102を測定することで回路のバラツキによる補正値を求めると同時に抵抗測定回路のチェックも行っている。   In this embodiment, the reference resistance 102 provided in the earth check resistance measurement circuit is measured to obtain a correction value due to circuit variations, and at the same time, the resistance measurement circuit is also checked.

それから、試料13のアースを確保すために、図3に示すように試料13の端面に刺すように接触させたアース針114によって、確実に試料13のアースが取れていることの確認を行う。   Then, in order to secure the ground of the sample 13, it is confirmed that the ground of the sample 13 is surely taken by the ground needle 114 which is brought into contact with the end face of the sample 13 as shown in FIG. 3.

なお、アース針114はバネ116により、試料13に押しつけられて接触が保たれる。   Note that the ground needle 114 is pressed against the sample 13 by the spring 116 to maintain contact.

すなわち、図2に示す抵抗測定回路で、第2のセレクタ106を試料抵抗測定側に切替えて基準電圧を印加し、アース針114と試料13の間に微弱な電流を流し、アース針114の接触抵抗を含む試料13の抵抗と電流検出抵抗との電位差を測定し、先に求めた補正値を使用して、接触抵抗を含む試料13の抵抗値を計算により求める。その計算値が上位から設定された閾値以内であるかどうかを判断し、アース針の状態や回路上の問題等の把握も同時に行うことが出来る。   That is, in the resistance measurement circuit shown in FIG. 2, the second selector 106 is switched to the sample resistance measurement side, a reference voltage is applied, a weak current is passed between the ground needle 114 and the sample 13, and the ground needle 114 is contacted. The potential difference between the resistance of the sample 13 including the resistance and the current detection resistance is measured, and the resistance value of the sample 13 including the contact resistance is obtained by calculation using the previously obtained correction value. It is possible to determine whether the calculated value is within a threshold set from the upper level, and to simultaneously grasp the state of the ground needle, a problem on the circuit, and the like.

また、試料の種類変化に伴う試料の抵抗値に対応したアースチェック抵抗値の閾値を上位計算機からパラメータ値として設定変更することで、容易に試料の種類変化に対応が行えることを特徴としている。   Further, it is characterized in that it is possible to easily cope with a change in the type of the sample by changing the setting of the threshold value of the earth check resistance value corresponding to the resistance value of the sample accompanying the change in the sample type as a parameter value from the host computer.

図2に示す抵抗測定回路ではアース針114と試料13の間の抵抗測定を行うにあたり、第1に示すセレクタ105で電流検出抵抗A103と電流検出抵抗B104を選択する機構を設けることにより、最良の電流検出抵抗を選択しながら抵抗測定を行うことを特徴としている。   In the resistance measurement circuit shown in FIG. 2, when the resistance measurement between the ground needle 114 and the sample 13 is performed, a mechanism for selecting the current detection resistor A103 and the current detection resistor B104 by the selector 105 shown in FIG. It is characterized in that resistance measurement is performed while selecting a current detection resistor.

また、図2に示す第1のセレクタ105では電流検出抵抗A103と電流検出抵抗B104の二者択一選択となっているが、電流検出抵抗を3個以上設けることで測定する抵抗値の分解能を更に上げることも出来る。   In addition, in the first selector 105 shown in FIG. 2, the current detection resistor A103 and the current detection resistor B104 are alternatively selected, but the resolution of the resistance value to be measured can be reduced by providing three or more current detection resistors. It can be raised further.

図2に示す抵抗測定回路は、第2のセレクタ106で基準抵抗102と試料13のアースチェック抵抗とを切替えて測定する機構を設けている。アースチェック抵抗測定回路内に備えた基準抵抗102を測定することで、抵抗測定回路のバラツキによる誤差の補正を行うための補正値を求められる。それと併せて抵抗測定回路のチェックを行えることを特徴としている。   The resistance measurement circuit shown in FIG. 2 is provided with a mechanism for switching and measuring the reference resistor 102 and the ground check resistance of the sample 13 by the second selector 106. By measuring the reference resistance 102 provided in the earth check resistance measurement circuit, a correction value for correcting an error due to variations in the resistance measurement circuit can be obtained. At the same time, it is possible to check the resistance measurement circuit.

図4に示すアースチェック処理のフローチャートには試料ホルダ115に試料が正常にセットされたことを確認してからの処理を示す。   The flowchart of the earth check process shown in FIG. 4 shows the process after confirming that the sample is normally set in the sample holder 115.

アースチェック処理は試料ホルダ115に装備されたアース針を試料の端面に刺すように接触させ(ステップ401)、アースチェック抵抗測定回路の第2のセレクタ106で基準抵抗102側を選択し(ステップ402)、第1のセレクタ105で電流検出抵抗A103側を選択して(ステップ403)、A/D変換データと測定回路定数から計算によって基準抵抗値と測定回路定数の補正値を求める(ステップ404)。   In the earth check process, the earth needle mounted on the sample holder 115 is brought into contact with the end face of the sample (step 401), and the second selector 106 of the earth check resistance measuring circuit selects the reference resistor 102 side (step 402). ), The first selector 105 selects the current detection resistor A103 side (step 403), and calculates the reference resistance value and the correction value of the measurement circuit constant by calculation from the A / D conversion data and the measurement circuit constant (step 404). .

次に、計算による基準抵抗値が所定の範囲内かどうかを確認し(ステップ405)、範囲内でなければ抵抗測定回路に異常が有ると判断し異常処理を行い(ステップ406)終了する。   Next, it is confirmed whether or not the calculated reference resistance value is within a predetermined range (step 405). If it is not within the range, it is determined that there is an abnormality in the resistance measurement circuit, an abnormality process is performed (step 406), and the process ends.

また、基準抵抗値が所定の範囲内であれば試料の測定を行うために、第2のセレクタ106で試料測定側を選択し(ステップ407)、A/D変換値と測定回路定数と補正値から試料の測定抵抗値を求める(ステップ408)。   If the reference resistance value is within a predetermined range, the second selector 106 selects the sample measurement side to measure the sample (step 407), and the A / D conversion value, measurement circuit constant, and correction value are selected. From this, the measured resistance value of the sample is obtained (step 408).

次に、測定したA/D変換値が第1のセレクタ105の切替値より大きく第1のセレクタ105が電流検出抵抗A103側かどうかを確認し(ステップ409)上記に条件であれば電流検出抵抗を電流検出抵抗B104側に切替えて(ステップ410)からステップ408に戻って再度試料の抵抗測定を行い、その抵抗値を計算する。   Next, it is confirmed whether or not the measured A / D conversion value is larger than the switching value of the first selector 105 and the first selector 105 is on the current detection resistor A103 side (step 409). Is switched to the current detection resistor B104 side (step 410), the process returns to step 408, the sample resistance is measured again, and the resistance value is calculated.

また、ステップ409では測定したA/D変換値が第1のセレクタ105の切替値よりも小さければ試料の抵抗測定結果と予めパラメータで設定されている試料に対応した閾値とを比較して(ステップ411)、その測定結果が閾値の範囲内ならば、
”Earth Check Data = ******[Ω],<OK>”と表示する(ステップ412)。
In step 409, if the measured A / D conversion value is smaller than the switching value of the first selector 105, the resistance measurement result of the sample is compared with the threshold value corresponding to the sample set in advance by a parameter (step 409). 411), if the measurement result is within the threshold range,
“Earth Check Data = ****** [Ω], <OK>” ”is displayed (step 412).

それ以外なら“Earth Check Data = ******[Ω],<NG>”とモニタに表示する(ステップ413)。   Otherwise, “Earth Check Data = ****** [Ω], <NG>” is displayed on the monitor (step 413).

ここで、******には抵抗値の計算結果を整数表示する。     Here, the calculation result of the resistance value is displayed as an integer in ******.

上述した実施例によれば、以下のような効果を得ることが出来る。   According to the embodiment described above, the following effects can be obtained.

(1).測定対象物の抵抗値を計算により求めることが出来る。   (1). The resistance value of the measurement object can be obtained by calculation.

(2).測定対象物の抵抗値を把握することで試料がアースに正常に接続されているかどうかの判断が出来る。   (2). By grasping the resistance value of the object to be measured, it is possible to determine whether the sample is normally connected to the ground.

(3).電流検出抵抗値の選択により測定対象物の抵抗値の分解能を上げて測定が出来る。   (3). Measurement can be performed by increasing the resolution of the resistance value of the object to be measured by selecting the current detection resistance value.

(4).基準抵抗の測定を行うことで、アースチェック抵抗測定回路のバラツキ誤差を補正することが出来る。   (4). By measuring the reference resistance, the variation error of the earth check resistance measurement circuit can be corrected.

(5).試料の変更に対して、回路の設定変更なしに比較データのパラメータ化により、上位計算機からのパラメータ設定で容易に対応が出来る。   (5). The change of the sample can be easily handled by parameter setting from the host computer by parameterizing the comparison data without changing the circuit settings.

本発明の実施例に係わるもので、電子線描画装置の概略図である。1 is a schematic diagram of an electron beam drawing apparatus according to an embodiment of the present invention. 本発明の実施例に係わるもので、アースチェック抵抗測定回路の概略図である。FIG. 5 is a schematic diagram of an earth check resistance measuring circuit according to an embodiment of the present invention. 本発明の実施例に係わるもので、試料とアース針との接触図である。FIG. 6 is a contact diagram of a sample and a ground needle according to an embodiment of the present invention. 本発明の実施例に係わるもので、アースチェック処理のフローチャートである。It is a flowchart of an earth check process in connection with the Example of this invention.

符号の説明Explanation of symbols

1…電子銃、2…第一成形開口、3…成形偏向器、4…成形レンズ、5…第二成形開口、6…ブランキング電極、7…成形ビーム、8…縮小レンズ、9…ブランキング絞り、10…対物レンズ、11…対物偏向器、12…反射電子検出器、13…試料、14…校正マーク、15…試料ステージ、16…成形偏向制御回路、17…ブランキング制御回路、18…対物偏向制御回路、19…信号処理回路、20…ステージ制御回路、21…制御計算機、101…電源、102…基準抵抗、103…電流検出抵抗A、104…電流検出抵抗B、105…第1のセレクタ、106…第2のセレクタ、107,108…抵抗、111…増幅器、112…A/D変換器、113…制御マイコン、114…アース針、115…試料ホルダ、116…バネ。   DESCRIPTION OF SYMBOLS 1 ... Electron gun, 2 ... 1st shaping | molding opening, 3 ... Molding deflector, 4 ... Molding lens, 5 ... 2nd shaping | molding opening, 6 ... Blanking electrode, 7 ... Molding beam, 8 ... Reduction lens, 9 ... Blanking Aperture, 10 ... objective lens, 11 ... objective deflector, 12 ... backscattered electron detector, 13 ... sample, 14 ... calibration mark, 15 ... sample stage, 16 ... shaping deflection control circuit, 17 ... blanking control circuit, 18 ... Objective deflection control circuit, 19 ... signal processing circuit, 20 ... stage control circuit, 21 ... control computer, 101 ... power supply, 102 ... reference resistor, 103 ... current detection resistor A, 104 ... current detection resistor B, 105 ... first Selector 106 ... second selector 107,108 resistor 111 ... amplifier 112 ... A / D converter 113 ... control microcomputer 114 ... grounding needle 115 ... sample holder 116 ... spring

Claims (6)

試料の表側端面に接触させる複数のアース針と、前記アース針の一つに接続される電流検出抵抗とを有し、前記アース針の接触抵抗を含む試料の抵抗と電流検出抵抗との電位差より前記接触抵抗を含む試料の抵抗値を計算し、前記抵抗値より前記アース針と前記試料との接触状態が良好か否かを判定する判定手段を有することを特徴とする電子線応用装置。   A plurality of grounding needles to be brought into contact with the front end surface of the sample, and a current detection resistor connected to one of the grounding needles, and a potential difference between the resistance of the sample including the contact resistance of the grounding needle and the current detection resistance An electron beam application apparatus comprising: a determination unit that calculates a resistance value of a sample including the contact resistance and determines whether or not a contact state between the ground needle and the sample is good based on the resistance value. 試料の表側端面に接触させる複数のアース針と、前記アース針の一つに接続される電流検出抵抗と、前記アース針の接触抵抗を含む試料の抵抗と電流検出抵抗との電位差より前記接触抵抗を含む試料の抵抗値を計算し、この抵抗値と閾値とを比較して前記アース針と前記試料との接触状態が良好か否かを判定することを特徴とする電子線応用装置。   A plurality of grounding needles to be brought into contact with the front end surface of the sample, a current detection resistor connected to one of the grounding needles, and the contact resistance based on a potential difference between the resistance of the sample including the contact resistance of the grounding needle and the current detection resistance An electron beam application apparatus comprising: calculating a resistance value of a sample including the element and comparing the resistance value with a threshold value to determine whether or not a contact state between the ground needle and the sample is good. 試料の表側端面に接触させる複数のアース針と、前記アース針の一つに接続される電流検出抵抗と、前記アース針の接触抵抗を含む試料の抵抗と電流検出抵抗との電位差を増幅する差動増幅器と、この差動増幅器の出力に基づいて前記アース針と前記試料との接触状態が良好か否かを判定する判定手段を有することを特徴とする電子線応用装置。   A plurality of grounding needles that are brought into contact with the front end surface of the sample, a current detection resistor connected to one of the grounding needles, and a difference that amplifies the potential difference between the resistance of the sample including the contact resistance of the grounding needle and the current detection resistance An electron beam application apparatus comprising: a dynamic amplifier; and determination means for determining whether or not a contact state between the ground needle and the sample is good based on an output of the differential amplifier. 請求項3記載の電子線応用装置において、
抵抗値が異なる複数の前記電流検出抵抗と、前記電流検出抵抗を択一する第1のセレクタとを有することを特徴とする電子線応用装置。
In the electron beam application apparatus of Claim 3,
An electron beam application apparatus comprising: a plurality of current detection resistors having different resistance values; and a first selector that selects the current detection resistors.
請求項3記載の電子線応用装置において、
前記試料と並列になる基準抵抗器を設け、
前記電流検出抵抗を前記基準抵抗器または前記試料に択一的に接続する第2のセレクタを設けたことを特徴とする電子線応用装置。
In the electron beam application apparatus of Claim 3,
Provide a reference resistor in parallel with the sample,
2. An electron beam application apparatus comprising a second selector for selectively connecting the current detection resistor to the reference resistor or the sample.
請求項2記載の電子線応用装置において、
試料の種類に対応する抵抗値の閾値が備えられ、試料の種類に応じて閾値が選択されることを特徴とする電子線応用装置。
In the electron beam application apparatus of Claim 2,
An electron beam application apparatus comprising a threshold value of a resistance value corresponding to a type of sample, and the threshold value is selected according to the type of sample.
JP2006082648A 2006-03-24 2006-03-24 Electron beam applied device Pending JP2007258536A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11275044B2 (en) 2018-08-31 2022-03-15 Nuflare Technology, Inc. Anomaly determination method and writing apparatus

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734098U (en) * 1980-07-30 1982-02-23
JPH0357211A (en) * 1989-07-25 1991-03-12 Nec Corp Specimen holder for electron beam lithography apparatus
JPH04137615A (en) * 1990-09-28 1992-05-12 Nippon Telegr & Teleph Corp <Ntt> Method of confirmation of continuity
JPH04301776A (en) * 1991-03-29 1992-10-26 Hioki Ee Corp Lcr measuring device
JPH06348976A (en) * 1993-06-03 1994-12-22 Nohmi Bosai Ltd Fire sensor
JPH0727798A (en) * 1993-07-09 1995-01-31 Nec Corp Measuring method for insulation resistance of line
JPH0781117A (en) * 1993-09-10 1995-03-28 Canon Inc Recorder and recording control method
JPH07191072A (en) * 1993-12-27 1995-07-28 Nec Corp Method for measuring line insulation resistance
JPH09163465A (en) * 1995-12-04 1997-06-20 Nec Eng Ltd Remote supervisory system
JPH10303093A (en) * 1997-04-23 1998-11-13 Hitachi Ltd Electron beam lithography system
JPH11242057A (en) * 1992-09-30 1999-09-07 Seiko Epson Corp Digital tester
JPH11248547A (en) * 1998-03-02 1999-09-17 T & D:Kk Measuring device and measuring method therefor
JP2005003596A (en) * 2003-06-13 2005-01-06 Fujitsu Ten Ltd Resistance measuring instrument, integrated circuit for measuring resistance, and method of measuring resistance
JP2005109178A (en) * 2003-09-30 2005-04-21 Semiconductor Leading Edge Technologies Inc Charged particle beam projection exposure apparatus
JP2006066833A (en) * 2004-08-30 2006-03-09 Fujitsu Ltd Method, circuit having function and program of resistance value compensations, and method and program of circuit resistance value tests

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734098U (en) * 1980-07-30 1982-02-23
JPH0357211A (en) * 1989-07-25 1991-03-12 Nec Corp Specimen holder for electron beam lithography apparatus
JPH04137615A (en) * 1990-09-28 1992-05-12 Nippon Telegr & Teleph Corp <Ntt> Method of confirmation of continuity
JPH04301776A (en) * 1991-03-29 1992-10-26 Hioki Ee Corp Lcr measuring device
JPH11242057A (en) * 1992-09-30 1999-09-07 Seiko Epson Corp Digital tester
JPH06348976A (en) * 1993-06-03 1994-12-22 Nohmi Bosai Ltd Fire sensor
JPH0727798A (en) * 1993-07-09 1995-01-31 Nec Corp Measuring method for insulation resistance of line
JPH0781117A (en) * 1993-09-10 1995-03-28 Canon Inc Recorder and recording control method
JPH07191072A (en) * 1993-12-27 1995-07-28 Nec Corp Method for measuring line insulation resistance
JPH09163465A (en) * 1995-12-04 1997-06-20 Nec Eng Ltd Remote supervisory system
JPH10303093A (en) * 1997-04-23 1998-11-13 Hitachi Ltd Electron beam lithography system
JPH11248547A (en) * 1998-03-02 1999-09-17 T & D:Kk Measuring device and measuring method therefor
JP2005003596A (en) * 2003-06-13 2005-01-06 Fujitsu Ten Ltd Resistance measuring instrument, integrated circuit for measuring resistance, and method of measuring resistance
JP2005109178A (en) * 2003-09-30 2005-04-21 Semiconductor Leading Edge Technologies Inc Charged particle beam projection exposure apparatus
JP2006066833A (en) * 2004-08-30 2006-03-09 Fujitsu Ltd Method, circuit having function and program of resistance value compensations, and method and program of circuit resistance value tests

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11275044B2 (en) 2018-08-31 2022-03-15 Nuflare Technology, Inc. Anomaly determination method and writing apparatus

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