JPH04136161A - Formation of thin film and device therefor - Google Patents

Abstract

PURPOSE:To form at high speed the thin film having excellent adhesive strength to a substrate by supporting the substrate in a vacuum chamber, ionizing the evaporated particles generated from the vapor deposition source in the vacuum chamber and impressing a high frequency to a substrate supporting means and depositing evaporated particles on the substrate while generating an electric discharge. CONSTITUTION:The film substrate 4 having 1.1mm thickness and 130mmphi is mounted to a substrate supporting part 3 of the device as shown in Fig.1 and Ti as the vapor deposition source 6 is imposed thereon. After the inside of the vacuum chamber 2 is discharged to 3X10<-6>Torr, gaseous argon is introduced therein until the vacuum degree attains 6X10<-5>Torr. Ti particles are generated by the vapor deposition 6 and a high-frequency voltage of 13.56MHz is so impressed to the substrate part until VDC attains 1.1kV. Further, a high frequency of 13.56MHz is impressed at 1kW to the high-frequency coil 11 disposed in a heating source as an ionizing means and the thin film of the Ti having the excellent adhesive strength is formed on the substrate at 3600Angstrom film thickness.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a thin film on a substrate and an apparatus thereof.More specifically, it is possible to form a thin film on a substrate with excellent adhesion to the substrate. The present invention relates to a thin film forming method and an apparatus thereof.

, No. 8's reply In fields such as recording media and semiconductor manufacturing processes, there is an increasing need to form thin films on substrates.

Known methods for forming a thin film on a substrate include the Yoto vacuum evaporation method, the ion blasting method, and the sputtering method. Among these, vacuum evaporation method 1 has problems such as low adhesion strength between the substrate and the evaporated film, and low reactivity of evaporated particles with acids (1, nitriding, etc.) in reactive evaporation t4 Such vacuum evaporation method In order to solve the problems of the method and obtain a thin film with excellent adhesion to the substrate, we applied a DC voltage to the substrate and discharged it at a vacuum level of about I A direct current ion brating method has been developed to form a film.Also, a coil to which a high frequency voltage is applied is installed between the evaporation source and the substrate.
A high-frequency ion blating method has been developed in which film formation is performed while ionizing evaporated particles.

According to such DC ion blating method or high frequency ion brating method, the evaporated particles are partially ionized, so compared to the evaporation method in which ionization of the evaporated particles is not promoted, the evaporated particles become more reactive. expedient
Although it is possible to form a thin film with excellent adhesion strength between the substrate and the thin film, it is not satisfactory. Therefore, there is a need for the development of a method and apparatus for manufacturing a thin film that improves the adhesion strength between the substrate and the thin film and that allows the evaporated particles to have high reactivity in reactive ion blating.

The present invention aims to solve the above-mentioned problems in the conventional technology, and aims to form a thin film with excellent adhesion strength to a substrate at a high deposition rate, and to improve reactivity. The object of the present invention is to provide a method and apparatus for forming a thin film in which evaporated particles have high reactivity in ion blating.

The method for forming a thin film according to the present invention supports a substrate in a vacuum chamber by a support means, ionizes evaporated particles generated from a vapor deposition source in the vacuum chamber, and applies a method to the substrate support means. The method is characterized in that evaporated particles are deposited on the substrate while applying high frequency waves to generate discharge.

Further, the thin film forming apparatus according to the present invention includes: evaporation means for evaporating a deposition source in a vacuum chamber to generate evaporated particles; ionization means for ionizing the evaporated particles; support means for supporting the substrate; The present invention is characterized by comprising a high-frequency voltage applying means for applying a high-frequency voltage to the supporting means to cause discharge, and for causing the evaporated particles to adhere to the substrate surface to form a thin film.

In the thin film forming method and apparatus according to the present invention, the collision energy of the evaporated particles against the substrate can be increased, so that a thin film with excellent adhesion to the substrate can be formed. Further, since the evaporated particles have high reactivity and are excellent in reactivity with acids (1°2, etc.) in reactive ion blating, the rate of thin film formation on the substrate can be increased.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The method and apparatus for forming a thin film on a substrate according to the present invention will be specifically described below.

In the present invention, a substrate is supported by a support means in a vacuum chamber, and evaporated particles generated from an evaporation source in the vacuum chamber are ionized. A thin film forming method and an apparatus therefor according to the present invention will be explained below with reference to FIG. 1.

FIG. 1 shows an example of a thin film forming apparatus according to the present invention.

As shown in FIG. 1, in this thin film forming apparatus 1, a vacuum chamber 2
A substrate support section 3 is provided inside and above the substrate support section 3, and a substrate 4 to which a thin film is applied is attached to this substrate support section 3. A high frequency power source 7 is connected to the substrate support section 3 so that a high frequency voltage can be applied thereto.

In the present invention, the substrate 4 may be a gold-K alloy, or an inorganic material such as glass, ceramics, or single crystal, an organic material such as plastic, or a film.

In the present invention, the substrate support section is not particularly limited as long as it is a member that can support the substrate and can apply high frequency waves. Moreover, the substrate support part may be equipped with a cooling device.

A vapor deposition source 6 is provided in the lower part of the interior of the vacuum chamber 2.
This evaporation source 6 is heated by a heating source 5 serving as an evaporation means to evaporate and generate evaporated particles.

Various heating methods can be used as the heating source, such as electron beam, resistance heating, induction heating, cluster ion beam, and hollow cathode method.

Approximately in the center between the heating source 5 and the substrate section, for example, a high frequency coil 11 is installed as an ionization means for ionizing the evaporated particles.
is installed. The high frequency coil 11 has a high frequency power supply 8
is connected so that high frequency voltage can be applied.

Although high frequency waves may be applied to the substrate support section 3 and the high frequency filter 11 using the same high frequency power source, the substrate support section 3
Since the high frequency applied to the high frequency coil 11 can be independently controlled, it is preferable to use separate high frequency power supplies.

Although a high frequency coil is used as the ionization means in this embodiment, other ionization means can also be used in the present invention.

In the present invention, the ionization means refers to a means for promoting ionization of evaporated particles generated from a vapor deposition source before or after attachment of a substrate.

Specifically, the ionization means is a device that uses an ionization electrode that applies a voltage between the evaporation source and the substrate to ionize the evaporated particles, and an ion source that is installed in a vacuum chamber and irradiates the evaporated particles with an ion beam. There are devices that ionize.

It can be shaped like a coil, a needle, a rod, or a ring. The applied voltage may be DC or RF high frequency, and in the case of DC application, an arc discharge type is preferable.

Further, a filament for thermionic emission may also be provided.

Ion sources include high frequency discharge type, microwave discharge type,
Examples include electron impact type, PIG type, electron oscillation type, electron beam injection type, duoplasmatron type, sputter type, and laser irradiation type.The irradiation position can be anywhere between the substrate, including the evaporation source and the substrate. good.

Note that a plurality of such ionization means can also be used.

Further, during reactive ion blating, the reactive gas can also be ionized using such an ionization means.

In the present invention, the thin film formed on the substrate may be any thin film such as metal alloy, oxide, nitride, silicide, or carbide. It can be formed by selection.

In FIG. 1, 9 is an exhaust pipe, and 1o is a gas introduction pipe.

Note that in this specification, the term "substrate section" refers to both the substrate support section 3 and the substrate 4, or the negative of either of them.

To form a thin film using the thin film forming apparatus 1 as described above, the substrate 4 is first mounted on the substrate support 3 .

Furthermore, after the vapor deposition source 6 is attached, the pressure inside the vacuum chamber z is reduced, and then the vapor deposition source 6 is heated and evaporated.

The degree of vacuum in the vacuum chamber 2 at this time is usually I x 10-5
~I X 1O-3Torr, preferably 2.6X 1
0-5 to 8X 10-4 Torr, more preferably 2.6X 10-5 to 4 X 1O-4 Torr.

This degree of vacuum is a value in the vicinity of the thin film formation part, and the vicinity of the thin film formation part means an area up to about ⅓ of the straight line distance from the substrate to the evaporation source.

In the present invention, an inert gas such as argon gas may be introduced into the vacuum chamber 2 through the gas introduction tube 1o to maintain the above-mentioned vacuum conditions, or when performing reactive ion blating, Gases such as oxygen gas and nitrogen gas may be introduced, or residual gas may be introduced.

In this way, after setting the degree of vacuum in the vacuum chamber z to the above conditions and stabilizing the concentration of evaporated particles, a high frequency voltage is applied to the substrate support section 3.

Here, the high frequency voltage applied to the substrate support section 3 is 1
means a voltage having a frequency of 00kHz or higher.

In the present invention, only the high-frequency voltage as described above may be applied to the substrate support portion 3, or the high-frequency voltage may be applied while being superimposed on the DC voltage.

When such a high frequency voltage is applied to the substrate support section 3, a discharge occurs near the substrate section.

At this time, it is desirable that the voltage of the DC component generated in the substrate support part 3, that is, the DC voltage VOC, is usually in the range of 0.22 to 8 kV, preferably 0.4 to 6 kV. The same conditions are set even when only the high frequency voltage is applied or when the high frequency voltage is applied in a superimposed manner on the DC voltage.

Further, at the same time as applying a high frequency voltage to the substrate support part 3, for example, a high frequency is applied to the high frequency coil 11.

Here, the high frequency voltage applied to the high frequency coil 11 means a voltage having a frequency of 100 kHz or more.

Note that the high frequency waves applied to the substrate support section 3 and the high frequency coil 11 may be in the same phase.

The evaporated particles ionized by the above-mentioned high-frequency coil 11 are activated by discharge treatment at the part of the substrate 4 supported by the substrate support part 3, that is, the part where the thin film is formed, by the discharge generated near the substrate support part. At the same time, ionization is further promoted and adhered to the substrate.In this way, the ionized evaporated particles collide with the activated substrate with large energy, so a thin film with excellent adhesion strength to the substrate is formed on the substrate. Ru.

We have described the method of forming a thin film while applying high frequency to the entire single substrate using an ionization electrode as an ionization means. However, if the substrate is in the form of a film and an ion source is used as an ionization means, the method shown in FIG. It is also possible to form a film while applying high frequency waves to a part of the substrate using an apparatus as shown in FIG.

Note that in the thin film forming apparatus shown in FIG. 3, in which the same parts are given the same reference numerals in each figure in this specification, a feeding core as a feeding means for the film substrate 4a is provided on the upper left and right sides of the inside of the vacuum chamber 2. A feeding side guide roller 23, a winding core 21 as a winding means, and a winding side guide roller 2
4 are arranged. Further, the vacuum chamber 2 includes a substrate support portion (cooling can) 3a disposed at a position substantially midway down between the sending core 22 and the winding core 21. The film substrate 4a is sent out from the feeding core 22, wound around the outer peripheral surface of the substrate support portion (cooling can) 3a, and wound onto the winding core 21.

Note that the winding core 21 is connected to the drive shaft via a clutch (not shown).
The surface pressure is adjusted by the 11J circuit so as to apply an appropriate tension to the film substrate 4a.

An evaporation source 6 is provided in the lower part of the interior of the vacuum chamber 2 which incorporates such a feeding means and a winding means, and this evaporation source 6 is a heating source (EB gun) 5a as an evaporation means.
is heated and evaporated to generate evaporated particles.

Further, an ion gun 13 is provided below inside the vacuum chamber 2 as an ionization means.

In this thin film forming apparatus 1, a high frequency power source 7 is connected to the substrate support part (cooling can) 3a through a matching box (not shown), so that a high frequency voltage can be applied to the substrate support part (cooling can) 3a. It has become.

In addition, in FIG. 3, 9 is an exhaust pipe, 10 is a gas introduction pipe, and 26 is a mask.

In order to form a thin film using the thin film forming apparatus l as described above, first the film substrate 4a is connected to a feeding means consisting of a feeding core 22 and a guide roller, and a winding core 2.
1 and a guide roller 24. At this time, the film substrate 4a is supported from the back side by being wound around the outer peripheral surface of the substrate support portion 3a (cooling can).

After mounting the film substrate 4a in this way and further mounting the vapor deposition source 6, the pressure inside the vacuum chamber Z is reduced, and then the vapor deposition source 6 is
Heat and evaporate.

After stabilizing the concentration of evaporated particles, transport of the film substrate is started, and the ion gun 13 irradiates the evaporated particles and the film with an ion beam, forming a film while applying a high frequency voltage to the substrate support part (cooling can) 3a. do.

Note that the vacuum conditions in the vacuum chamber Z and the high frequency coil applied to the substrate support portion 3a are the same as in the case of the apparatus shown in FIG.

In such a thin film forming apparatus, evaporated particles are first ionized by an ion gun.

Next, due to the discharge generated near the substrate support part, the part of the substrate 4a supported by the substrate support part 3a, that is, the part where the thin film is to be formed, is subjected to discharge treatment and activated. The ionization of the evaporated particles is further promoted and adhered to the substrate.

In this way, the ionized evaporated particles collide with the activated substrate with large energy, so that a thin film with excellent adhesion strength to the substrate is formed on the substrate.

In addition, in such a thin film forming apparatus, since the ion gun 13 irradiates the evaporated particles and the film with an ion beam while forming the film, the reaction between the evaporated particles and the reactive gas on the substrate occurs during reactive ion blating. is promoted and the thin film formation rate can be increased.

The thin film forming method and apparatus thereof according to the present invention have been explained based on FIG. 1 and FIG. It goes without saying that configurations other than those shown can be used.

Introduction I and Remarks About the method and apparatus for forming a thin film according to the present invention A substrate is supported in a vacuum chamber by means of supporting means. Evaporated particles generated from a deposition source in the vacuum chamber are ionized, and high frequency waves are applied to the substrate supporting means. Since the evaporated particles are deposited on the substrate while the evaporated particles are applied to generate a discharge, the energy of the evaporated particles colliding with the substrate can be increased, regardless of the type of substrate, whether it is conductive or non-conductive. A thin film with excellent adhesion to the substrate is formed. Furthermore, since the evaporated particles have high reactivity and are excellent in oxidizing, nitriding, and other reactivity in reactive ion blating, it is possible to increase the rate of thin film formation on the substrate.

Hereinafter, the present invention will be explained with reference to examples.The present invention is not limited to these examples.

Lost lid 1” The device as shown in Figure 1 has a thickness of 1.1 mm.

A 130 mm x 11 Ultem substrate was attached to the substrate support 3, and the vacuum chamber 2 in which Ti was placed as an evaporation source was evacuated to a vacuum level of 3 x 1O-6 Torr, and then argon gas was pumped to a vacuum level of 6 x 1O. -5 Torr
Then, Ti particles are generated from the evaporation source 6 to form Ti particles on the substrate part.
．． A high frequency voltage of 56 MHz was applied so that VDC was 1.1 kV to cause discharge, and a high frequency voltage of 13.56 MHz was applied to the high frequency coil 11 disposed on the heating source as an ionization means.
By applying 1 kW of high frequency of z, the Ti thin film was heated to 360 OA.
The peel strength of the thin film thus formed on the substrate was measured using the apparatus shown in FIG.
In the figure, the substrate 4 is fixed to the support stand 3o through the adhesive layer 31.
The adhesive strength measuring rod 33 was pulled upward and the peel strength of the thin film was measured using a U-gauge (not shown). The results are shown in Table 1.

Lost Bird Remains” A device as shown in FIG. 2, 1.1 mm thick.

A 120 mrnl polycarbonate substrate is attached to the substrate support part 3.
At the same time, the vacuum chamber Z was evacuated to 2.5X 1O-6 Torr, and the vacuum chamber Z was evacuated to 7.5X 1O-6 Torr using argon gas.
After introducing Ti particles until the temperature reaches 5 Torr, Ti particles are generated from the evaporation source and 13,
A high frequency voltage of 56 MHz was applied so that the VDC was 1.1 kV to cause discharge, and a DC voltage of 100 V was applied to the ring-shaped anode 12 disposed on the heating source 5 as an ionization means to oxidize the Ti film. The peel strength of the Ti11 film formed on the substrate in this way was measured to a film thickness of 3,600 mm, and the results are shown in Table 1.

"Form 1" A PPA film substrate and Cu as an evaporation source were installed in the apparatus shown in Fig. 3, and the degree of vacuum in the vacuum chamber was set to 8.
The vacuum was evacuated to 6X 1O-6 Torr, and then argon gas was introduced until the degree of vacuum reached 9.5X 1O-5 Torr. Cu evaporation particles were generated from the evaporation source 6, and while the film substrate was being transported, 13 While applying a high frequency voltage of .56 MHz and irradiating an Ar ion beam with an ion gun 13 toward the thin film forming part of the film at an acceleration voltage of 450 V, a Cu film with a thickness of 1 pm was formed on the film substrate. The peel strength of Cu1li thus formed on the substrate was measured and the results are shown in Table 1.

In Example 1, TIM was heated at 34° C. in the same manner as in Example 1, except that the high-frequency coil serving as the ionization means was removed.
The peel strength of the Ti film thus formed on the substrate was measured to a film thickness of 0OA, and the results are shown in Table 1.

In Example 1, except that the substrate was grounded, the device number was the same as in Example 1.The vacuum degree in the vacuum chamber equipped with the same substrate as in Example 1 and Ti as a deposition source was set to 3. Evacuate to 4X 1O-BTorr, then argon gas to a vacuum level of 6.5X 1O-
Next & Next T1 particles were generated from the evaporation source until the temperature reached 5 Torr, and 13
, a high frequency voltage of 56 MHz was applied so that the VDC was 1.1 kV, and a voltage of 13 MHz was applied to the high frequency coil.
, 0.5 kW of high frequency voltage of 56 MHz was applied, and Ti
The peel strength of the Ti film thus formed on the substrate was measured, and the results are shown in Table 1.

(Margin below) Table 1

[Brief explanation of drawings]

1 to 3 are schematic cross-sectional views showing an example of a thin film forming apparatus according to the present invention. FIG. 4 is a schematic diagram showing a method for measuring peel strength. In Table 1, the peel strengths of Example 2.3 and Comparative Example 1.2 are relative values when the peel strength of Example 1 is taken as 100. (Left below) 1 Thin film forming device 3.3a Substrate support 5.58 Heating source 7.8 High frequency power source 11 High frequency coil 12 Ring shaped anode 13 ... Ion gant 2 ... Vacuum chamber 4.4a ... Substrate 6 ... Vapor deposition source

Claims (2)

[Claims] (1) The substrate is supported by a support means in a vacuum chamber, and the evaporated particles generated from the evaporation source in the vacuum chamber are ionized, and the evaporated particles are A thin film forming method characterized by depositing on a substrate. (2) evaporation means for evaporating a deposition source in a vacuum chamber to generate evaporated particles; ionization means for ionizing the evaporated particles; support means for supporting the substrate; and applying a high frequency voltage to the support means. 1. A thin film forming apparatus comprising: a high frequency voltage applying means for generating a discharge and depositing the evaporated particles on the surface of a substrate to form a thin film.