JPS6167765A - Ion plating device - Google Patents

Ion plating device

Info

Publication number
JPS6167765A
JPS6167765A JP18887384A JP18887384A JPS6167765A JP S6167765 A JPS6167765 A JP S6167765A JP 18887384 A JP18887384 A JP 18887384A JP 18887384 A JP18887384 A JP 18887384A JP S6167765 A JPS6167765 A JP S6167765A
Authority
JP
Japan
Prior art keywords
high frequency
ion
base
ionization
ion plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18887384A
Other languages
Japanese (ja)
Inventor
Tetsuo Kuwabara
鉄夫 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP18887384A priority Critical patent/JPS6167765A/en
Publication of JPS6167765A publication Critical patent/JPS6167765A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Abstract

PURPOSE:To improve the adhesion of films by providing a high frequency antenna between an ionized means and base support means, cleaning the base with a ion bombard in the high vacuum and transferring quickly to the process of forming films. CONSTITUTION:An internal vacuum chamber 1 of an ion plating device is exhausted to the high vacuum through a conductor 2, gaseous Ar is introduced from a gas conducting port 12 and the voltage is impressed to a dome 8 for supporting a base supported and fixed by an electric source 9 for ion accelerating. Further, high frequency voltage is impressed to the high frequency antenna 10 installed between an evaporation source 3 and said dome 8 by the high frequency electric source 11 to clean the base with the high frequency ion bomber. Thereafter, reaction gas such as N2 is introduced from a conducting port 12, and an evaporation material 4 such as Ti on an evaporation source 3 is heated and evaporated by an electric gun or a heating resister or the like. The evaporated gaseous Ti and N2 are ionized or excited by an anode 5 for ionization to form films such as TiN on the base.

Description

【発明の詳細な説明】 ［技術分野］ 本発明はイオンプレーティング装置に関する。[Detailed description of the invention] [Technical field] The present invention relates to an ion plating apparatus.

［従来技術］ イオンプレーティング装置はイオン加速用陰極としての
基板支持部と蒸発源と該蒸発源近傍に配置したイオン化
手段たとえばイオン化電極とを収容した真空室を有して
おり、この真空室には反応ガス導入口が設けられている
。このようなイオンプレーティング装置においては、従
来、成膜前に基板の表面をクリーニングする場合、低真
空中（たとえばｌＸｌ０−ＩＴｏｒｒ−ＩＸＩＯ２Ｔｏ
ｒｒ）でアルゴンガスを用いて直流放電イオンボンバー
ドが行なわれいる。そのため、クリーニング後、イオン
プレーティングを開始するまでに真空度を上げなければ
ならない（たとえば１×１０　６Ｔｏｒｒ）。この高真
空化の間はクリーニングされた基板が低真空状態に置か
れるので基板が汚染され易く、このため形成ｙれる膜の
基板への密着性が低下するという問題があった。[Prior Art] An ion plating apparatus has a vacuum chamber that houses a substrate support as a cathode for ion acceleration, an evaporation source, and an ionization means, such as an ionization electrode, arranged near the evaporation source. is equipped with a reactive gas inlet. Conventionally, in such an ion plating apparatus, when cleaning the surface of a substrate before film formation, cleaning is performed in a low vacuum (for example, lXl0-ITorr-IXIO2Torr).
Direct current discharge ion bombardment is performed using argon gas. Therefore, after cleaning, the degree of vacuum must be increased (for example, to 1×10 6 Torr) before starting ion plating. During this high vacuuming period, the cleaned substrate is placed in a low vacuum state, so the substrate is likely to be contaminated, which causes a problem in that the adhesion of the formed film to the substrate is reduced.

［発明の目的］ 本発明は、上記の如き従来技術に鑑み、高真空中でもイ
オンボンバードを行なうことができ、これにより短時間
でイオンポンバード工程からイオンプレーティング工程
へと移行することができ、従って密着性の良好な膜を形
成できるイオンプレーティング装置を提供することにあ
る。[Object of the Invention] In view of the above-mentioned prior art, the present invention is capable of performing ion bombardment even in a high vacuum, thereby allowing a transition from an ion bombarding process to an ion plating process in a short time, Therefore, it is an object of the present invention to provide an ion plating apparatus that can form a film with good adhesion.

［発明の要旨１ 本発明によれば、以上の様な目的は、イオン化手段と基
板支持手段との間に高周波アンテナが設置されているこ
とを特徴とする、イオンプレーティング装置により達成
される。[Summary of the Invention 1 According to the present invention, the above objects are achieved by an ion plating apparatus characterized in that a high frequency antenna is installed between the ionization means and the substrate support means.

［発明の実施例］ 以下、添伺図面を参照しながら本発明の具体的実施例を
説明する。[Embodiments of the Invention] Specific embodiments of the present invention will be described below with reference to the accompanying drawings.

第１図は本発明によるイオンプレーティング装置の一実
施例の概略構成図である。ここに示すイオンプレーティ
ング装置は真空室ｌを有し、この真空室１は導管２を通
じて真空源（図示せず）に接続されている。FIG. 1 is a schematic diagram of an embodiment of an ion plating apparatus according to the present invention. The ion plating apparatus shown here has a vacuum chamber 1 which is connected via a conduit 2 to a vacuum source (not shown).

真空室ｌの底部には蒸発源３が配置されており、該蒸発
源３−にには蒸発物質４が収容される。An evaporation source 3 is arranged at the bottom of the vacuum chamber 1, and an evaporation substance 4 is accommodated in the evaporation source 3-.

蒸発源３としては、たとえば電子銃装置または抵抗加熱
装置を使用することができる。蒸発源３の−に方には隣
接してイオン化手段としてのイオン化用アノード５が配
置されている（尚、イオン化手段としてはイオン化用ア
ノードのほかに、たとえばイオン化用熱電子発生源を用
いることもできる）。該アノード５は真空室１外の電源
６に接続されている。アノード５の」二方には蒸着用シ
ャッタ７が配置されている。As the evaporation source 3, for example, an electron gun device or a resistance heating device can be used. An ionization anode 5 as an ionization means is arranged adjacent to the - side of the evaporation source 3 (in addition to the ionization anode, for example, an ionization thermionic source may be used as the ionization means). can). The anode 5 is connected to a power source 6 outside the vacuum chamber 1. Deposition shutters 7 are arranged on both sides of the anode 5.

真空室１内の頂部付近には、基板支持用ドーム８が設け
られており、該ドーム８の下面側に基板が支持固定され
る。このドーム８は真空室１外のイオン加速用電源９に
接続されており、負にバイアスされるようになっている
。A substrate supporting dome 8 is provided near the top of the vacuum chamber 1, and a substrate is supported and fixed on the underside of the dome 8. This dome 8 is connected to an ion acceleration power source 9 outside the vacuum chamber 1, and is biased negatively.

基板支持用ドーム８の下方すなわちドーム８とイオン化
用アノード５との間には高周波アンテナ１０が配置され
ており、これは真空室ｌ外のイオンボンバード用高周波
電源１１に接続されている。この高周波アンテナ１０は
、蒸着作用を妨げないように直径の大きいリングあるい
はコイルの形にするのが好ましい。A high frequency antenna 10 is arranged below the substrate supporting dome 8, that is, between the dome 8 and the ionization anode 5, and is connected to a high frequency power source 11 for ion bombardment outside the vacuum chamber l. This high frequency antenna 10 is preferably in the form of a ring or coil with a large diameter so as not to interfere with the vapor deposition action.

真空室ｌの底部には、ボンバード用ガスあるいは反応ガ
スを供給するための導入口１２が接続されている。An inlet 12 for supplying bombardment gas or reaction gas is connected to the bottom of the vacuum chamber l.

本実施例装置において、たとえばＴｉＮ膜を形成する場
合には、真空源（図示せず）によって真空室ｌ内をｌＸ
ｌ０　５〜ｌＸｌ０　６Ｔｏｒｒに排気した後、荒引き
状態でアルゴンガスを導入口１２を通して真空室１内に
送り込み、真空室１内の圧力をｔｘｉｏ−’１〜ｔｘｔ
ｏ　　２Ｔｏｒｒとする。次にイオン加速用電源９によ
って基板支持用ドーム８に電圧を印加すると、直流イオ
ンボンバードが行なわれる。その後、木引き状態にする
と同時にアルゴンガスを導入して真空室１内の圧力をＩ
ＸＩ　Ｏ−３〜ｌＸｌ０−４　Ｔｏｒｒとし、高周波電
源１１により高周波アンテナ１０に高周波電圧を印加す
る。これにより、高周波イオンボンバードが行なわれ、
基板のクリーニングがなされる。In the apparatus of this embodiment, when forming a TiN film, for example, the inside of the vacuum chamber l is
After evacuation to 10 5 to 1
o Set to 2 Torr. Next, when a voltage is applied to the substrate support dome 8 by the ion acceleration power source 9, DC ion bombardment is performed. After that, at the same time as the wood-biki state is introduced, argon gas is introduced to reduce the pressure inside the vacuum chamber 1 to I.
XI O-3 to lXl0-4 Torr, and a high frequency voltage is applied to the high frequency antenna 10 by the high frequency power supply 11. As a result, high frequency ion bombardment is performed,
The substrate is cleaned.

この高周波イオンボンバードによるクリーニングの後、
導入口１２から反応ガスとして窒素ガスを真空室ｌ内に
導入し、蒸発源３により膜形成用Ｔｉ蒸気を発生させる
。このとき、電源６によりイオン化用アノード５に電圧
を印加すると、Ｔｉ蒸気および窒素ガスがイオン化ある
いは励起されてドーム８の方へと引きつけられ、基板上
にＴｉＮの膜が形成される。After cleaning with this high frequency ion bombardment,
Nitrogen gas is introduced into the vacuum chamber 1 as a reaction gas through the introduction port 12, and the evaporation source 3 generates Ti vapor for film formation. At this time, when a voltage is applied to the ionization anode 5 by the power source 6, the Ti vapor and nitrogen gas are ionized or excited and drawn toward the dome 8, forming a TiN film on the substrate.

［発明の効果］ 以−ヒの様な本発明によれば、高周波アンテナ１０によ
る高周波放電は高真空中でも可能であるから、高真空中
でイオンボンバードにて基板のクリーニングを行なうこ
ぶができ、従ってクリーニング後すみやかに膜形成工程
に移行できると共に膜の密着性を改善でき、このため従
来イオンプレーティングではむずかしいとされていたＴ
ｉＮ、ＴｉＣ等の膜形成を容易に行なうことができる。[Effects of the Invention] According to the present invention as described below, the high frequency discharge by the high frequency antenna 10 is possible even in a high vacuum. After cleaning, it is possible to proceed to the film formation process immediately, and the adhesion of the film can be improved.
Films such as iN and TiC can be easily formed.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明によるイオンプレーティング装置の構成
図である。 ｌｅｅ・真空室、２・・・導管、 ３・・・蒸発源、５・・・イオン化用アノード、７・・
・蒸着用シャッタ、 ８・・・基板支持用ドーム、 １０・・・高周波アンテナ、 １２・・拳ガス導入口 第１図FIG. 1 is a block diagram of an ion plating apparatus according to the present invention. lee/vacuum chamber, 2... conduit, 3... evaporation source, 5... ionization anode, 7...
・Deposition shutter, 8... Dome for substrate support, 10... High frequency antenna, 12... Fist gas inlet Figure 1

Claims (3)

【特許請求の範囲】[Claims] （１）蒸発源と該蒸発源近傍に設置されているイオン化
手段と該イオン化手段から隔たって設置されている基板
支持手段とを有し、これらがすべて真空室内に配置され
ているイオンプレーティング装置において、イオン化手
段と基板支持手段との間に高周波アンテナが設置されて
いることを特徴とする、イオンプレーティング装置。(1) Ion plating apparatus that has an evaporation source, ionization means installed near the evaporation source, and substrate support means installed apart from the ionization means, all of which are placed in a vacuum chamber. An ion plating apparatus characterized in that a high frequency antenna is installed between the ionization means and the substrate support means. （２）蒸発源が電子銃装置または抵抗加熱装置である、
第１項のイオンプレーティング装置。(2) the evaporation source is an electron gun device or a resistance heating device;
The ion plating apparatus of Section 1. （３）イオン化手段がイオン化用アノードまたはイオン
化用熱電子発生源である、第１項のイオンプレーティン
グ装置。(3) The ion plating device according to item 1, wherein the ionization means is an ionization anode or an ionization thermionic electron source.
JP18887384A 1984-09-11 1984-09-11 Ion plating device Pending JPS6167765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18887384A JPS6167765A (en) 1984-09-11 1984-09-11 Ion plating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18887384A JPS6167765A (en) 1984-09-11 1984-09-11 Ion plating device

Publications (1)

Publication Number Publication Date
JPS6167765A true JPS6167765A (en) 1986-04-07

Family

ID=16231365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18887384A Pending JPS6167765A (en) 1984-09-11 1984-09-11 Ion plating device

Country Status (1)

Country Link
JP (1) JPS6167765A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879741A (en) * 1993-03-24 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for forming film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5278778A (en) * 1975-12-26 1977-07-02 Takeo Okazaki Ionic plating apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5278778A (en) * 1975-12-26 1977-07-02 Takeo Okazaki Ionic plating apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879741A (en) * 1993-03-24 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for forming film
US6261634B1 (en) 1993-03-24 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for forming film

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