JPH04132273A - Semiconductor optical coupler - Google Patents
Semiconductor optical couplerInfo
- Publication number
- JPH04132273A JPH04132273A JP2253345A JP25334590A JPH04132273A JP H04132273 A JPH04132273 A JP H04132273A JP 2253345 A JP2253345 A JP 2253345A JP 25334590 A JP25334590 A JP 25334590A JP H04132273 A JPH04132273 A JP H04132273A
- Authority
- JP
- Japan
- Prior art keywords
- island
- output
- semiconductor optical
- output terminal
- coupling device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体光結合装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor optical coupling device.
従来の半導体光結合装置の構造は受光素子と出力素子を
同一平面上に配！し各々金線で接続して回路を構成し、
その後モールド樹脂で樹脂成形を施したものが知られて
いる。第３図及び第４図はかかる従来の例を説明するた
めの半導体光結合装置の平面図及び断面図である。第３
図に示すように入力端子ｌｂ上に搭載し金線９で接続し
た発光素子３および出力端子２ｂ上に搭載した受光素子
４および該平面上の出力端子２ａ、２ｂ上に搭載した出
力素子７ａ、７ｂからなる光結合装置はシリコン透明樹
脂５を光信号の導通路として用い、モールド樹脂６に封
入したものである。出力素子７ａ、７ｂは縦伝導型のＭ
ＯＳＦＥＴであり素子底面がドレイン電極となっており
出力端子２ａ。The structure of the conventional semiconductor optical coupling device is that the light receiving element and the output element are arranged on the same plane! and connect each with gold wire to form a circuit,
It is known that resin molding is then performed using mold resin. FIGS. 3 and 4 are a plan view and a sectional view of a semiconductor optical coupling device for explaining such a conventional example. Third
As shown in the figure, a light emitting element 3 mounted on the input terminal lb and connected with a gold wire 9, a light receiving element 4 mounted on the output terminal 2b, and an output element 7a mounted on the output terminals 2a and 2b on the plane, The optical coupling device 7b uses a silicon transparent resin 5 as a conduction path for optical signals and is sealed in a molded resin 6. The output elements 7a and 7b are vertical conduction type M
It is an OSFET, and the bottom surface of the element serves as the drain electrode, and is the output terminal 2a.
２ｃとは導電性接着剤で接続されている。出力素子７ａ
、７ｂは受光素子４と同一平面上に配置され各々金線９
で接続されている。2c is connected with conductive adhesive. Output element 7a
, 7b are arranged on the same plane as the light receiving element 4, and each gold wire 9
connected with.
上述した従来の半導体光結合装置では受光素子４と出力
素子であるＭＯ８ＦＥＴ７ａ、７ｂは同一平面上に設置
されるためリードフレームのアイランド８の占有面積が
大きくなり、モールドパラエージの強度が弱くなり、且
つ小型化するのに制限を受けるという欠点がある。In the conventional semiconductor optical coupling device described above, the light receiving element 4 and the MO8FETs 7a and 7b, which are the output elements, are installed on the same plane, so the area occupied by the island 8 of the lead frame becomes large, and the strength of the mold paraage becomes weak. Another disadvantage is that there are restrictions on miniaturization.
本発明の半導体光結合装置は受光素子を搭載したアイラ
ンドの裏面に出力素子（ＭＯＳＦＥＴ）を装着し、出力
素子が搭載されるべきリードフレームのアイランドの面
積を縮小した構造である。The semiconductor optical coupling device of the present invention has a structure in which an output element (MOSFET) is mounted on the back side of an island on which a light receiving element is mounted, and the area of the island of the lead frame on which the output element is to be mounted is reduced.
次に本発明の実施例について図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を説明するための平面図を示
し第２図は本発明の断面図である。第１図に示すように
、本実施例はまず、出力端子２ｂのアイランド８上に受
光素子４を搭載し、出力端子２ａまたは２Ｃと金線９で
接続した後、出力端子２ｂの裏面のアイランド上に出力
素子（ＭＯＳＦＥＴ）７を搭載し金線９等で接続し、透
明シリコン樹脂５、モールド樹脂６で封入したものであ
る。FIG. 1 is a plan view for explaining an embodiment of the present invention, and FIG. 2 is a sectional view of the present invention. As shown in FIG. 1, in this embodiment, the light receiving element 4 is first mounted on the island 8 of the output terminal 2b, and is connected to the output terminal 2a or 2C with a gold wire 9. An output element (MOSFET) 7 is mounted on the top, connected with gold wire 9, etc., and sealed with transparent silicone resin 5 and mold resin 6.
本発明によれば発光素子４を搭載した出力端子２ｂのア
イランド８を両面使用する事により他の出力端子２ａ、
２ｃのアイランドは金線９をボンディングするだけの面
積だけで充分であり、アイランド面積を縮小する事が出
来る。この種の半導体製品は今後小型化がますます要求
され且つ耐熱性、耐湿性の要求レベルも厳しくなってき
ておりその対策のためにはモールドパッケージ強度の向
上が必須事項であり、モールド樹脂そのものの改善を並
行して本発明の実施例のようにアイランドの占有面積の
縮小化もより重要である。According to the present invention, by using both sides of the island 8 of the output terminal 2b on which the light emitting element 4 is mounted, other output terminals 2a,
The area of the island 2c is sufficient for bonding the gold wire 9, and the island area can be reduced. This type of semiconductor product will be required to be more and more miniaturized in the future, and the required level of heat resistance and moisture resistance is also becoming stricter. In addition to improvements, it is also important to reduce the area occupied by the island as in the embodiments of the present invention.
以上説明したように本発明の半導体光結合装置は、リー
ドフレームのアイランドを両面使用する事により、モー
ルドパッケージの小型化が図れ、且つアイランドの縮小
化によりモールドパッケージ強度を向上させる事が可能
となりひいては耐熱性、耐湿性の向上が実現出来る。As explained above, in the semiconductor optical coupling device of the present invention, by using both sides of the island of the lead frame, it is possible to reduce the size of the mold package, and by reducing the size of the island, it is possible to improve the strength of the mold package. Improved heat resistance and moisture resistance can be achieved.
第１図及び第２図は本発明の一実施例を説明するための
平面図及び断面図、第３図及び第４図は従来の一例を説
明するための各々平面図及び断面図である。
１ ａ、 １ ｂ、 １ ｃ・−・入力端子、２ａ、２
ｂ、２Ｃ・・・出力端子、３・・・発光素子、４・・・
受光素子、５・・・シリコン透明樹脂、６・・・モール
ド樹脂、７ａ。
７ｂ・・・出力素子（ＭＯＳＦＥＴ）、８・・・アイラ
ンド、９・・・金線。1 and 2 are a plan view and a sectional view for explaining an embodiment of the present invention, and FIGS. 3 and 4 are a plan view and a sectional view, respectively, for explaining an example of the conventional art. 1 a, 1 b, 1 c --- input terminal, 2 a, 2
b, 2C...output terminal, 3...light emitting element, 4...
Light receiving element, 5... Silicone transparent resin, 6... Mold resin, 7a. 7b... Output element (MOSFET), 8... Island, 9... Gold wire.
Claims (1)
ーム搭載してなる半導体光結合装置において、リードフ
レームの表裏両面のうちの一方の面に受光素子を設置し
、他方の面に出力素子を設置した事を特徴とする半導体
光結合装置。In a semiconductor optical coupling device in which a light-emitting element, a light-receiving element, and an output element are mounted on a lead frame, the light-receiving element is installed on one side of the front and back sides of the lead frame, and the output element is installed on the other side. Characteristic semiconductor optical coupling device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2253345A JPH04132273A (en) | 1990-09-21 | 1990-09-21 | Semiconductor optical coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2253345A JPH04132273A (en) | 1990-09-21 | 1990-09-21 | Semiconductor optical coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04132273A true JPH04132273A (en) | 1992-05-06 |
Family
ID=17250041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2253345A Pending JPH04132273A (en) | 1990-09-21 | 1990-09-21 | Semiconductor optical coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04132273A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705833A (en) * | 1994-12-30 | 1998-01-06 | Citizen Electronics Co., Ltd. | Surface-mounted photocoupler |
-
1990
- 1990-09-21 JP JP2253345A patent/JPH04132273A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705833A (en) * | 1994-12-30 | 1998-01-06 | Citizen Electronics Co., Ltd. | Surface-mounted photocoupler |
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