JPH04131366A - Method for cleaning substrate - Google Patents
Method for cleaning substrateInfo
- Publication number
- JPH04131366A JPH04131366A JP25038790A JP25038790A JPH04131366A JP H04131366 A JPH04131366 A JP H04131366A JP 25038790 A JP25038790 A JP 25038790A JP 25038790 A JP25038790 A JP 25038790A JP H04131366 A JPH04131366 A JP H04131366A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- particles
- cleaning
- ionized
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000004140 cleaning Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 11
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000007740 vapor deposition Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000011247 coating layer Substances 0.000 claims abstract description 5
- 239000011538 cleaning material Substances 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はイオンブレーティング法等の前処理工程に用い
られる基板のクリーニング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cleaning a substrate used in a pretreatment process such as an ion blating method.
〔従来技術と発明が解決しようとする課題〕イオンブレ
ーティング法は、クロム等の蒸着材料を加熱蒸発させ、
蒸発した粒子をグロー放電によりイオン化し、さらにイ
オン化された粒子を電界により基板に衝突させて基板表
面にコーティング層（薄膜）を形成する方法であり、こ
のような方法により膜付けを行なう場合には、蒸着粒子
の付着強度を高めるために基板表面を膜付けの前にクリ
ーニングする必要がある。[Prior art and problems to be solved by the invention] The ion blating method heats and evaporates vapor deposition materials such as chromium.
This is a method in which evaporated particles are ionized by glow discharge, and then the ionized particles are made to collide with the substrate using an electric field to form a coating layer (thin film) on the substrate surface. In order to increase the adhesion strength of the deposited particles, it is necessary to clean the substrate surface before applying the film.
従来、基板表面のクリーニングはアルゴンガス等の不活
性ガスをイオン源とするイオンボンバードによって行な
っていたが、このような方法によるとクリーニング後の
残留ガスによって膜質が劣化するため、基板のクリーニ
ングと膜付けを単一の装置で行なうことができなかった
。Conventionally, cleaning of the substrate surface was performed by ion bombardment using an inert gas such as argon gas as an ion source, but with this method, the film quality deteriorates due to residual gas after cleaning, so it is difficult to clean the substrate and film. The attachment could not be done with a single device.
本発明はこのような問題点に着目してなされたもので、
その目的とするところは膜質を劣化させることなく基板
のクリーニングと膜付けを単一の装置で行なうことので
きる基板のクリーニング方法を提供することにある。The present invention was made by focusing on these problems.
The purpose is to provide a method for cleaning a substrate that can perform cleaning and film deposition on a substrate with a single device without deteriorating the film quality.
上記課題を解決するために本発明は、基板に蒸着粒子を
蒸着させてコーティング層を形成する前処理工程におい
て、前記蒸着粒子と同一材料のイオン化粒子を基板に衝
突させて基板表面をクリーニングするものである。In order to solve the above problems, the present invention cleans the substrate surface by colliding ionized particles of the same material as the vapor deposition particles against the substrate in a pretreatment step of depositing vapor deposition particles on the substrate to form a coating layer. It is.
すなわち、本発明ではイオン源として基板に蒸着される
粒子と同一材料を用いるため、残留ガスによる膜質の劣
化を防止でき、基板のクリーニングと膜付けを単一の装
置で行なうことかできる。That is, in the present invention, since the same material as the particles deposited on the substrate is used as an ion source, deterioration of film quality due to residual gas can be prevented, and cleaning of the substrate and film deposition can be performed with a single device.
Ｃ実施例〕 以下、図面を参照して本発明の一実施例を説明する。C Example] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図は本発明方法を適用した基板クリーニング装置の
概略図であり、イオン化室を形成する装置本体１内には
基板２が矢印方向に移動可能に設けられているとともに
、るつぼ３が基板２に対向して設けられている。このる
つぼ３内には基板２に蒸着されるコーテイング材と同じ
材質のクリーニング材（例えばＣｒ等）４がイオン源と
して収容されており、図示しない加熱手段により加熱蒸
発するようになっている。FIG. 1 is a schematic diagram of a substrate cleaning apparatus to which the method of the present invention is applied, in which a substrate 2 is provided movably in the direction of the arrow in an apparatus main body 1 forming an ionization chamber, and a crucible 3 is installed to clean the substrate 2. is located opposite. A cleaning material (for example, Cr, etc.) 4 made of the same material as the coating material deposited on the substrate 2 is housed in the crucible 3 as an ion source, and is heated and evaporated by a heating means (not shown).
また、装置本体１内には加熱蒸発したクリーニング材４
をイオン化するイオン化電極５が設けられている。この
イオン化電極５はイオン化電源Ｅ１のマイナス側に接続
されており、るつ（子３との間にイオン化放電（アーク
放電）を発生させて蒸発粒子６をイオン化するように構
成されて０る。In addition, there is a cleaning material 4 heated and evaporated inside the main body 1 of the device.
An ionization electrode 5 is provided for ionizing. This ionization electrode 5 is connected to the negative side of the ionization power source E1, and is configured to generate an ionization discharge (arc discharge) between the electrode 3 and the electrode 3 to ionize the evaporated particles 6.
一方、前記るつぼ３と基板２との間にはノくイアスミ圧
Ｅｂが印加されており、このノくイアスミ圧Ｅｂにより
イオン化された蒸発粒子６を電界加速して基板２に衝突
させ、基板２の表面１こ付着した油分等の不純物をイオ
ン化電極く一トにより除去するように構成されている。On the other hand, an insulator pressure Eb is applied between the crucible 3 and the substrate 2, and the ionized evaporation particles 6 are accelerated by the electric field and collided with the substrate 2, and The structure is such that impurities such as oil adhering to the surface of the electrode are removed by an ionizing electrode.
なお、前記装置本体１内にはイオン化された粒子６の拡
散を防止するために遮蔽板７がるつ（ヨ３と基板２との
間に設けられている。In addition, a shielding plate 7 is provided in the apparatus main body 1 between the casing 3 and the substrate 2 in order to prevent the ionized particles 6 from diffusing.
このように構成される基板クリーニング装置では、前述
したようにイオン源として基板２（こ蒸着される粒子と
同一材料を用いるため、残留ガス（こよる膜質の劣化を
防止でき、基板２のクリーニングと膜付けを単一の装置
で行なうこと力くできる。In the substrate cleaning apparatus configured in this manner, as described above, since the same material as the particles to be deposited on the substrate 2 is used as the ion source, deterioration of the film quality due to residual gas can be prevented, and cleaning of the substrate 2 and Film application can be easily performed with a single device.
なお、本発明は上記実施例に限定されるものではなく、
本発明の要旨を逸脱しな０範囲で種々の変形実施か可能
である。Note that the present invention is not limited to the above embodiments,
Various modifications can be made within the zero range without departing from the gist of the invention.
以上説明したように本発明は、基板に蒸着粒子を蒸着さ
せてコーティング層を形成する前処理工程において、前
記蒸着粒子と同一材料のイオン化粒子を基板に衝突させ
て基板表面をクリーニングするものである。したがって
、イオン源として基板に蒸着される粒子と同一材料を用
いるため、残留ガスによる膜質の劣化を防止でき、基板
のクリーニングと膜付けを単一の装置で行なうことがで
きる。As explained above, the present invention cleans the substrate surface by bombarding the substrate with ionized particles of the same material as the vapor deposition particles in the pretreatment step of depositing vapor deposition particles onto the substrate to form a coating layer. . Therefore, since the same material as the particles to be deposited on the substrate is used as an ion source, deterioration of film quality due to residual gas can be prevented, and cleaning of the substrate and film deposition can be performed with a single device.
第１図は本発明方法を適用した基板クリーニング装置の
概略図である。
１・・・装置本体、２・・・基板、３・・・るつぼ、４
・・・クリーニング材、５・・・イオン化電極、６・・
・イオン化された蒸発粒子、７・・・遮蔽板。
第１工
出願人代理人 弁理士 鈴江武彦FIG. 1 is a schematic diagram of a substrate cleaning apparatus to which the method of the present invention is applied. 1... Device body, 2... Substrate, 3... Crucible, 4
...Cleaning material, 5...Ionization electrode, 6...
-Ionized evaporation particles, 7...shielding plate. Patent attorney Takehiko Suzue, representative of the first applicant
Claims (1)
る前処理工程において、前記蒸着粒子と同一材料のイオ
ン化粒子を基板に衝突させて基板表面をクリーニングす
ることを特徴とする基板のクリーニング方法。A method for cleaning a substrate, characterized in that, in a pretreatment step of depositing vapor deposition particles on the substrate to form a coating layer, the surface of the substrate is cleaned by colliding ionized particles of the same material as the vapor deposition particles against the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25038790A JPH04131366A (en) | 1990-09-21 | 1990-09-21 | Method for cleaning substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25038790A JPH04131366A (en) | 1990-09-21 | 1990-09-21 | Method for cleaning substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04131366A true JPH04131366A (en) | 1992-05-06 |
Family
ID=17207164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25038790A Pending JPH04131366A (en) | 1990-09-21 | 1990-09-21 | Method for cleaning substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04131366A (en) |
-
1990
- 1990-09-21 JP JP25038790A patent/JPH04131366A/en active Pending
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