JP2576154B2 - How to clean the sample stage cover - Google Patents
How to clean the sample stage coverInfo
- Publication number
- JP2576154B2 JP2576154B2 JP28340087A JP28340087A JP2576154B2 JP 2576154 B2 JP2576154 B2 JP 2576154B2 JP 28340087 A JP28340087 A JP 28340087A JP 28340087 A JP28340087 A JP 28340087A JP 2576154 B2 JP2576154 B2 JP 2576154B2
- Authority
- JP
- Japan
- Prior art keywords
- sample stage
- chamber
- sample
- stage cover
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光CVD装置、マイクロ波プラズマCVD装置、
ECRプラズマCVD装置等のCVD装置のチャンバ内に配され
た試料台の一部を被蔽する試料台カバーの付着物を除去
する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an optical CVD apparatus, a microwave plasma CVD apparatus,
The present invention relates to a method for removing deposits on a sample stage cover that covers a part of a sample stage arranged in a chamber of a CVD apparatus such as an ECR plasma CVD apparatus.
前記CVD装置を用いて試料に薄膜を形成する場合、所
定の真空度に設定された上で原料ガスが供給されるチャ
ンバ内へガス活性化源としての光又はマイクロ波を導
き、該ガス活性化源を用いて前記チャンバ内の原料ガス
を活性化し、前記チャンバ内の試料台にて保持した試料
に所望の薄膜を形成する。ところで、前記試料台の一部
（具体的には試料が位置する部分以外の部分）には通
常、石英ターゲット等からなる試料台カバーが試料台を
被蔽するように装着されているが、この装着は、試料台
に薄膜が形成されてそれが使用不可となるのを防止する
こと（即ち試料台の保護）、試料台に活性化された原料
ガスが直接当たることに起因して試料への薄膜形成に悪
影響が及ぶのを回避すること（即ち試料への良好なる薄
膜形成の促進）等を目的とするものである。When a thin film is formed on a sample using the CVD apparatus, light or microwaves are introduced as a gas activation source into a chamber to which a source gas is supplied after being set to a predetermined degree of vacuum, and the gas activation is performed. A source gas is used to activate a source gas in the chamber, and a desired thin film is formed on a sample held on a sample stage in the chamber. Incidentally, a sample stage cover made of a quartz target or the like is usually mounted on a part of the sample stage (specifically, a portion other than the portion where the sample is located) so as to cover the sample stage. The mounting is to prevent a thin film from being formed on the sample stage and making it unusable (that is, to protect the sample stage), and to attach the activated source gas directly to the sample stage to apply the sample to the sample stage. The purpose is to avoid adversely affecting the formation of a thin film (that is, to promote the formation of a good thin film on a sample).
かかる試料台カバーには試料に薄膜を形成する過程で
当然に付着物が膜堆積するので、試料への薄膜形成を継
続して行う場合には該付着物を定期的に除去する必要が
生じる。そして該付着物の除去は従来、前記チャンバの
圧力を一旦大気圧に戻した上で前記試料台カバーを試料
台から取り外し、これを洗浄することによって行われて
いた。As a matter of course, deposits are deposited on the sample stage cover during the process of forming a thin film on the sample, so that it is necessary to periodically remove the deposits when the thin film is continuously formed on the sample. The removal of the deposits has conventionally been performed by once returning the pressure of the chamber to atmospheric pressure, removing the sample stage cover from the sample stage, and washing the sample stage cover.
然るに、上述した如き従来の方法にて試料台カバーの
浄化を行う場合は、前記チャンバ内が一旦大気中に曝さ
れるため、該チャンバ内の大気による汚染が問題とな
る。また前記チャンバ内の圧力を一旦大気中に戻すこと
に起因して、余分な時間及び労力がかかるという問題も
ある。However, when purifying the sample stage cover by the conventional method as described above, since the inside of the chamber is once exposed to the atmosphere, there is a problem of contamination by the atmosphere in the chamber. There is also a problem that extra time and labor are required due to returning the pressure in the chamber to the atmosphere once.
本発明はかかる事情に鑑みてなされたものであり、上
述した如き問題を一挙に解決し得る試料台カバーの浄化
方法を提供することを目的とする。The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method of purifying a sample stage cover that can solve the above-described problems at once.
本発明に係る試料台カバーの浄化方法はCVD装置のチ
ャンバ内に配された試料台と該試料台の一部を被蔽する
試料台カバーとの間に絶縁膜にて被覆された電極を配置
し、該電極に高周波電圧を印加して前記試料台カバーの
表面をスパッタさせ、そのスパッタ効果によって前記試
料台カバーの付着物を除去することを特徴とする。The method of purifying a sample stage cover according to the present invention includes disposing an electrode covered with an insulating film between a sample stage disposed in a chamber of a CVD apparatus and a sample stage cover covering a part of the sample stage. Then, a high frequency voltage is applied to the electrode to sputter the surface of the sample stage cover, and the deposits on the sample stage cover are removed by the sputtering effect.
前記試料台と前記試料台カバーとの間に配置される電
極に高周波電圧を印加すると、該電極に隣接する前記試
料台カバーはブロッキングコンデンサとなり、そのチャ
ンバ内に曝される表面にはマイナスのセルフバイアスが
発生し、このセルフバイアスによってチャンバ内のプラ
スイオンが前記表面へ引き付けられて入射し、その入射
エネルギによって前記表面はスパッタされる。そしてそ
のスパッタ効果により、前記試料台カバーの表面に膜堆
積している付着物は容易に除去されることとなる。な
お、薄膜形成過程で上述の処理を並行して行う場合は、
前記付着物の膜堆積を積極的に抑止することも可能であ
る。When a high-frequency voltage is applied to an electrode disposed between the sample stage and the sample stage cover, the sample stage cover adjacent to the electrode becomes a blocking capacitor, and the surface exposed in the chamber has a negative self-voltage. A bias is generated, and positive ions in the chamber are attracted and incident on the surface by the self-bias, and the incident energy sputters the surface. By the sputtering effect, deposits deposited on the surface of the sample stage cover can be easily removed. If the above processes are performed in parallel during the thin film formation process,
It is also possible to positively suppress film deposition of the deposit.
以下本発明をその実施例を示す図面に基づいて説明す
る。Hereinafter, the present invention will be described with reference to the drawings showing the embodiments.
第１図は本発明方法の実施に使用するプラズマ装置の
要部（試料台の部分）を拡大して示す模式的縦断面図、
第２図は該プラズマ装置の全体構成を示す模式的縦断面
図である。FIG. 1 is a schematic longitudinal sectional view showing an enlarged main part (a part of a sample stage) of a plasma apparatus used for carrying out the method of the present invention,
FIG. 2 is a schematic longitudinal sectional view showing the overall configuration of the plasma device.
図中１はチャンバ壁体を示しており、該チャンバ壁体
１によって外気から隔絶されたチャンバ内は隔壁２にて
プラズマ生成室３と試料室４とに分割されている。そし
て前記プラズマ生成室３の一側壁中央のマイクロ波導入
口3aには導波管５が接続される一方、その他側壁（換言
すれば前記隔壁２）の中央にはプラズマ引出窓2aが設け
られており、また前記チャンバの周囲にはプラズマ生成
室３及びこれに連結された導波管５の一端部にわたって
励磁コイル６が周設されている。また前記導波管５の他
端部は図示しない高周波発振器に接続されており、ここ
で発せられたマイクロ波はマイクロ波導入口3aからプラ
ズマ生成室３内へ導入されるようになっている。また励
磁コイル６は図示しない直流電源に接続されており、該
電源から直流電流を前記励磁コイル６に通流することに
より、マイクロ波が導入されるプラズマ生成室３内にプ
ラズマを生成し得るような磁界形成すると共に、試料室
４側に向けて磁束密度が低くなる発散磁界を形成し、プ
ラズマ生成室３内のプラズマを試料室４内へ導入するよ
うになっている。更に前記試料室４内には前記プラズマ
引出窓2aに対向させて試料Ｓを静電吸着等の手段にて保
持する試料台７が配置されているが、該試料台７上にお
ける試料Ｓが位置する部分（本実施例では中心部）に
は、試料Ｓへの均一な薄膜形成を促進すること等を目的
として試料台７に高周波電圧を印加するための電極８が
配置される一方、試料Ｓが位置しない部分（実施例では
周辺部）には、前述した如く試料台７の保護、試料Ｓへ
の良好なる薄膜形成の促進等を目的として石英ターゲッ
ト等からなる環状の試料台カバー11が試料台７を被蔽す
るように装着されている。なお前記電極８には、高周波
発振器9a及びマッチングボックス9bを備え、一端側が接
地されると共に前記チャンバ壁体１に接続されている高
周波発生源９の他端側が接続されている。In the figure, reference numeral 1 denotes a chamber wall, and the inside of the chamber isolated from the outside air by the chamber wall 1 is divided by a partition 2 into a plasma generation chamber 3 and a sample chamber 4. A waveguide 5 is connected to the microwave inlet 3a at the center of one side wall of the plasma generation chamber 3, and a plasma extraction window 2a is provided at the center of the other side wall (in other words, the partition wall 2). An exciting coil 6 is provided around the plasma generation chamber 3 and one end of the waveguide 5 connected thereto around the chamber. The other end of the waveguide 5 is connected to a high-frequency oscillator (not shown), and the microwave generated here is introduced into the plasma generation chamber 3 from the microwave inlet 3a. The excitation coil 6 is connected to a DC power supply (not shown), and a DC current is passed from the power supply to the excitation coil 6 so that plasma can be generated in the plasma generation chamber 3 into which microwaves are introduced. In addition to forming an appropriate magnetic field, a divergent magnetic field whose magnetic flux density decreases toward the sample chamber 4 is formed, and the plasma in the plasma generation chamber 3 is introduced into the sample chamber 4. Further, a sample stage 7 for holding the sample S by means such as electrostatic suction is disposed in the sample chamber 4 so as to face the plasma extraction window 2a. The electrode 8 for applying a high-frequency voltage to the sample stage 7 for the purpose of promoting the formation of a uniform thin film on the sample S and the like is disposed in the portion (the central portion in the present embodiment). In a portion where is not located (peripheral portion in the embodiment), an annular sample stage cover 11 made of a quartz target or the like is provided for protecting the sample stage 7 and promoting formation of a good thin film on the sample S as described above. It is mounted so as to cover the table 7. The electrode 8 includes a high-frequency oscillator 9a and a matching box 9b. One end of the electrode 8 is grounded, and the other end of the high-frequency generator 9 connected to the chamber wall 1 is connected to the electrode 8.
さて、上述した如き試料台７と試料台カバー11との間
には、Al2O3溶射層等の絶縁膜12aにて全面被覆された環
状の電極12が配置されている。そして該電極12には、高
周波発振器10a及びマッチングボックス10bを備える高周
波発生源10の一端側が接続されている。なお、該高周波
発生源10の他端側は接地されると共に前記チャンバ壁体
１に接続されている。An annular electrode 12 entirely covered with an insulating film 12a such as an Al 2 O 3 sprayed layer is arranged between the sample stage 7 and the sample stage cover 11 as described above. The electrode 12 is connected to one end of a high frequency generator 10 including a high frequency oscillator 10a and a matching box 10b. The other end of the high frequency source 10 is grounded and connected to the chamber wall 1.
かかるプラズマ装置を用いて試料Ｓ表面に薄膜を形成
する場合、先ず図示しない排気手段を用いてプラズマ生
成室３内及び試料室４内を所定の真空度に設定する。そ
して前記プラズマ生成室３内へ図示しない原料ガス供給
管から原料ガスを供給すると共に前述の如くマイクロ波
を導入し、該プラズマ生成室３内にてプラズマを生成さ
せる。更に該プラズマを前述の如く試料室４内へ導入し
て該プラズマを試料室４内の試料Ｓに投射することによ
り、試料Ｓ表面に薄膜を形成する。When a thin film is formed on the surface of the sample S using such a plasma apparatus, first, the inside of the plasma generation chamber 3 and the inside of the sample chamber 4 are set to a predetermined degree of vacuum by using an exhaust means (not shown). A source gas is supplied into the plasma generation chamber 3 from a source gas supply pipe (not shown), and a microwave is introduced as described above to generate plasma in the plasma generation chamber 3. Further, the plasma is introduced into the sample chamber 4 as described above, and the plasma is projected onto the sample S in the sample chamber 4 to form a thin film on the surface of the sample S.
かくして試料Ｓ表面に薄膜を形成すると、該試料Ｓを
保持する試料台７の一部を被蔽する試料台カバー11には
付着物が膜堆積するが、該付着物の除去は、本発明方法
による場合は試料台７と試料台カバー11との間に配置さ
れた電極12に高周波発生源10を用いて高周波電圧を印加
することによって容易に行われる。即ち、前記電極12に
高周波電圧が印加されると、該電極12に隣接する試料台
カバー11はブロッキングコンデンサとなり、その試料室
４内に曝される表面にはマイナスのセルフバイアスが発
生し、このセルフバイアスによって試料室４内のプラス
イオンが前記表面へ引き付けられて入射し、その入射エ
ネルギによって前記表面はスパッタされる。そしてその
スパッタ効果により、前記試料台カバー11の表面に膜堆
積している付着物は容易に除去されることとなる。その
結果、試料室４内及びこれに連通するプラズマ生成室３
内、換言すればチャンバ内を大気中に曝すことなく前記
付着物の除去が行えるので、前記チャンバ内が大気によ
って汚染されることがなくなり、また前記チャンバ内の
圧力を一旦大気圧に戻すこと及び前記チャンバ内の圧力
を所定の真空度となすことが不必要となってそのための
余分な時間及び労力を削減することができる。Thus, when a thin film is formed on the surface of the sample S, a deposit is deposited on the sample stage cover 11 which covers a part of the sample stage 7 holding the sample S, and the deposit is removed by the method of the present invention. Is easily performed by applying a high-frequency voltage to the electrode 12 disposed between the sample stage 7 and the sample stage cover 11 using the high-frequency generation source 10. That is, when a high-frequency voltage is applied to the electrode 12, the sample stage cover 11 adjacent to the electrode 12 becomes a blocking capacitor, and a negative self-bias is generated on the surface exposed to the inside of the sample chamber 4. Positive ions in the sample chamber 4 are attracted and incident on the surface by the self-bias, and the surface is sputtered by the incident energy. Then, due to the sputtering effect, the deposits deposited on the surface of the sample stage cover 11 can be easily removed. As a result, the inside of the sample chamber 4 and the plasma generation chamber 3 communicating therewith
Of these, in other words, the deposits can be removed without exposing the inside of the chamber to the atmosphere, so that the inside of the chamber is not polluted by the atmosphere, and the pressure in the chamber is once returned to the atmospheric pressure. It is not necessary to set the pressure in the chamber to a predetermined degree of vacuum, so that extra time and labor can be reduced.
なお、前記試料台カバー11の表面へ引き付けられる試
料室４内のプラスイオンを積極的に供給するには、例え
ば前記チャンバ内へArガスを供給すればよい。In order to positively supply the positive ions in the sample chamber 4 attracted to the surface of the sample stage cover 11, for example, Ar gas may be supplied into the chamber.
また、上述の実施例は本発明方法をプラズマCVD装置
において適用したものであったが、本発明方法は光CVD
装置等のCVD装置においても勿論適用できる。In the above-described embodiment, the method of the present invention is applied to a plasma CVD apparatus.
Of course, the present invention can also be applied to a CVD apparatus such as an apparatus.
以上詳述した如く、本発明方法によれば、CVD装置の
チャンバ内の試料台カバーの浄化がチャンバ内を大気中
に曝すことなく行えるので、チャンバ内の汚染が防止で
き、また前記浄化にかかる時間及び労力を削減できる結
果、CVD装置を稼動するときの生産性が向上する。As described in detail above, according to the method of the present invention, since the cleaning of the sample stage cover in the chamber of the CVD apparatus can be performed without exposing the inside of the chamber to the atmosphere, the contamination in the chamber can be prevented, and the cleaning is performed. As a result of saving time and labor, productivity when operating the CVD apparatus is improved.
第１図は本発明方法の実施に使用する装置の要部を示す
模式的縦断面図、第２図は該装置の全体構成を示す模式
的縦断面図である。 １……チャンバ壁体、10……高周波発生源、11……試料
台カバー、12……電極、12a……絶縁膜FIG. 1 is a schematic longitudinal sectional view showing a main part of an apparatus used for carrying out the method of the present invention, and FIG. 2 is a schematic longitudinal sectional view showing the entire configuration of the apparatus. 1 ... chamber wall, 10 ... high frequency generator, 11 ... sample stage cover, 12 ... electrodes, 12a ... insulating film
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−271936（ＪＰ，Ａ) 特開 昭55−55530（ＪＰ，Ａ) 特開 昭58−28828（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-271936 (JP, A) JP-A-55-55530 (JP, A) JP-A-58-28828 (JP, A)
Claims (1)
該試料台の一部を被蔽する試料台カバーとの間に絶縁膜
にて被覆された電極を配置し、該電極に高周波電圧を印
加して前記試料台カバーの表面をスパッタさせ、そのス
パッタ効果によって前記試料台カバーの付着物を除去す
ることを特徴とする試料台カバーの浄化方法。An electrode covered with an insulating film is arranged between a sample stage disposed in a chamber of a CVD apparatus and a sample stage cover covering a part of the sample stage. A method for purifying a sample stage cover, comprising applying a voltage to sputter the surface of the sample stage cover, and removing the deposits on the sample stage cover by the sputtering effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28340087A JP2576154B2 (en) | 1987-11-10 | 1987-11-10 | How to clean the sample stage cover |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28340087A JP2576154B2 (en) | 1987-11-10 | 1987-11-10 | How to clean the sample stage cover |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01125820A JPH01125820A (en) | 1989-05-18 |
| JP2576154B2 true JP2576154B2 (en) | 1997-01-29 |
Family
ID=17665031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28340087A Expired - Fee Related JP2576154B2 (en) | 1987-11-10 | 1987-11-10 | How to clean the sample stage cover |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2576154B2 (en) |
-
1987
- 1987-11-10 JP JP28340087A patent/JP2576154B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01125820A (en) | 1989-05-18 |
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