JPH04129280A - Optically coupled device - Google Patents
Optically coupled deviceInfo
- Publication number
- JPH04129280A JPH04129280A JP2250602A JP25060290A JPH04129280A JP H04129280 A JPH04129280 A JP H04129280A JP 2250602 A JP2250602 A JP 2250602A JP 25060290 A JP25060290 A JP 25060290A JP H04129280 A JPH04129280 A JP H04129280A
- Authority
- JP
- Japan
- Prior art keywords
- pin
- leds
- led
- coupling device
- optical coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 229920002050 silicone resin Polymers 0.000 abstract description 5
- 229910000679 solder Inorganic materials 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光結合装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an optical coupling device.
従来の光結合装置は、第3図に示すように、同一パッケ
ージ内に1個の発光ダイオード(LED)7と、ホトト
ランジスタ11を搭載している。LED7に順方向へ一
定電流を流しLED7を発光させ、その光が、コレクタ
5−エミッタ4に一定電圧を印加したホトトランジスタ
11に到達し、電流に変換され信号の伝達を行っていた
。As shown in FIG. 3, the conventional optical coupling device includes one light emitting diode (LED) 7 and a phototransistor 11 in the same package. A constant current was passed through the LED 7 in the forward direction to cause the LED 7 to emit light, and the light reached the phototransistor 11 to which a constant voltage was applied between the collector 5 and the emitter 4, where it was converted into a current and transmitted a signal.
第4図に従来の光結合装置を製造する上での入力側LE
Dダイボンディング用アイランド及びボンディングワイ
ヤリードの平面図(第4図A)及び側面図(第4図B)
を示す。Figure 4 shows the input side LE when manufacturing a conventional optical coupling device.
Plan view (Fig. 4A) and side view (Fig. 4B) of D die bonding island and bonding wire lead
shows.
入力側LEDダイボンディングアイランドに、LED7
を1個搭載し、ボンディングワイヤ8で、アノード側リ
ード1に導通をとりシリコーン樹脂10でコーティング
した構造となっている。LED7 on the input side LED die bonding island
The anode side lead 1 is electrically connected to the anode side lead 1 using a bonding wire 8, and is coated with a silicone resin 10.
この従来の光結合装置では、同一パッケージ内に1個の
LEDを搭載している為、LEDへの入力電流と、ホト
トランジスタからの出力電流比つまり電流伝達比が固定
され、回路の用途に応じて電流伝達比を変更することが
できなかった。In this conventional optical coupling device, one LED is mounted in the same package, so the ratio of the input current to the LED and the output current from the phototransistor, that is, the current transfer ratio, is fixed and can be adjusted depending on the application of the circuit. Therefore, it was not possible to change the current transfer ratio.
本発明の光結合装置は、入力側の同一マウントアイラン
ドに、あらかじめ発光出力を測定し、発光出力が異なる
組合せを選択したLEDを複数個搭載し、それぞれ異な
るリードにワイヤボンディングしシリコーン樹脂にてコ
ーティングしてホトトランジスタと同一パッケージに納
めている。The optical coupling device of the present invention is equipped with a plurality of LEDs whose light emitting outputs are measured in advance and combinations with different light emitting outputs are selected on the same mount island on the input side, each of which is wire-bonded to a different lead and coated with silicone resin. It is housed in the same package as the phototransistor.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例の6ピンリ一ド光結合装置の
構成図である。LED7aのアノード1aを0番ピン、
カソード2を0番ビン、ホトトランジスタ7のエミッタ
4を0番ビン、コレクタ5を0番ビン、ベース6を0番
ピンとする。第2図は本発明を実際に製造するときの入
力側LEDダイボンディング用アイランド及びボンディ
ングワイヤリードの平面図(第2図A)及び側面図(第
2図B)である、LED7a、7bは、Agペースト又
はAuGe等のソルダーを用いて同一アイランドにダイ
ボンディングし、それぞれ異なるり−ドla、lbにワ
イヤ9でボンディングする。FIG. 1 is a block diagram of a 6-pin lead optical coupling device according to an embodiment of the present invention. Connect the anode 1a of LED 7a to pin 0,
The cathode 2 is the 0th pin, the emitter 4 of the phototransistor 7 is the 0th pin, the collector 5 is the 0th pin, and the base 6 is the 0th pin. FIG. 2 is a plan view (FIG. 2A) and a side view (FIG. 2B) of the input side LED die bonding island and bonding wire lead when actually manufacturing the present invention.The LEDs 7a and 7b are: Die bonding is performed on the same island using solder such as Ag paste or AuGe, and bonding is performed with wires 9 to different solders la and lb, respectively.
LEDを保護する為シリコーン樹脂10でコーティング
する。Coat with silicone resin 10 to protect the LED.
第2の実施例を第5図に示す。LEDを3個連結した8
ビンリ一ド光結合装置である。又第6図は、第2の実施
例を実際に製造するときの入力側LEDダイボンディン
グ用アイランド及びボンディングワイヤリードの平面図
(第6図A)及び側面図(第6図B)である。第7図に
は、実施例1での各LEDそれぞれ同−一定電流を流し
たときのVCE(コニフタ・エミッタ間電圧)Ic(出
力コレクタ電流)特性を示す。各LED7a。A second embodiment is shown in FIG. 8 with 3 LEDs connected
This is a bin-read optical coupler. Further, FIG. 6 is a plan view (FIG. 6A) and a side view (FIG. 6B) of the input side LED die bonding island and bonding wire lead when actually manufacturing the second embodiment. FIG. 7 shows VCE (conifter-emitter voltage) and Ic (output collector current) characteristics when the same constant current flows through each LED in Example 1. Each LED7a.
7bの発光出力の違いにより異なる出力電流が得られる
。Different output currents can be obtained depending on the difference in the light emission output of 7b.
以上説明したように本発明は、同一パッケージ内に異る
発光出力のLEDを複数個搭載することによって、複数
個の任意のLEDの組合せを選択し導通することができ
、回路用途に応じた電流伝達比を変更することができる
という効果を有する。As explained above, by mounting a plurality of LEDs with different light emitting outputs in the same package, the present invention can select and conduct any combination of a plurality of LEDs, and can generate current according to the circuit application. This has the effect that the transmission ratio can be changed.
第1図は本発明の一実施例の6ピンリ一ド光結合装置の
構成図、第2図A、Bは第1図に示した一実施例を製造
する際のグイボンディング用アイランドの平面図及び側
面図、第3図は従来技術の6ピンリ一ド光結合装置の構
成図、第4図A、 Bは第3図に示した従来技術の6ピ
ンリ一ド光結合装置を製造する際のダイボンディング用
アイランドの平面図と側面図、第5図は本発明の第2の
実施例の8ビンリ一ド光結合装置の構成図、第6図A、
Bは第5図に示した第二の実施例の8ビンリ一ド光結合
装置を製造する際のグイボンディング用アイランドの平
面図と側面図、第7図は本発明の一実施例でのVct−
I↓特性図である。
1.1a、1b+ 1cm・・アノード、2・・・カ
ソード、4・・・エミッタ、5・・・コレクタ、6・・
・ベース、7.7a、7b、7C−−−LED、9・・
・ボンディングワイヤ、10・・・シリコーン樹脂、1
1・・・ホトトランジスタ。FIG. 1 is a block diagram of a 6-pin lead optical coupling device according to an embodiment of the present invention, and FIGS. 2A and B are plan views of a bonding island when manufacturing the embodiment shown in FIG. 1. 3 is a block diagram of a conventional 6-pin lead optical coupler, and FIGS. 4A and 4B are diagrams for manufacturing the 6-pin lead optical coupler of the prior art shown in FIG. 3. A plan view and a side view of the island for die bonding, FIG. 5 is a configuration diagram of an 8-bin lead optical coupling device according to the second embodiment of the present invention, and FIG. 6A,
B is a plan view and a side view of the Gui bonding island when manufacturing the 8-bin linear optical coupling device of the second embodiment shown in FIG. 5, and FIG. 7 is a Vct diagram in one embodiment of the present invention. −
This is a characteristic diagram of I↓. 1.1a, 1b+ 1cm...Anode, 2...Cathode, 4...Emitter, 5...Collector, 6...
・Base, 7.7a, 7b, 7C---LED, 9...
・Bonding wire, 10...Silicone resin, 1
1...Phototransistor.
Claims (1)
に搭載し、光によって電気信号を伝達する光結合装置に
おいて、発光出力の異なる発光ダイオードを同一パッケ
ージ内に複数個有しかつそれぞれのカソードを同電位と
することを特徴とする光結合装置。In an optical coupling device that includes a light emitting diode and a phototransistor in the same package and transmits electrical signals by light, having multiple light emitting diodes with different light emission outputs in the same package and having their cathodes at the same potential. An optical coupling device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2250602A JPH04129280A (en) | 1990-09-20 | 1990-09-20 | Optically coupled device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2250602A JPH04129280A (en) | 1990-09-20 | 1990-09-20 | Optically coupled device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04129280A true JPH04129280A (en) | 1992-04-30 |
Family
ID=17210316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2250602A Pending JPH04129280A (en) | 1990-09-20 | 1990-09-20 | Optically coupled device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04129280A (en) |
-
1990
- 1990-09-20 JP JP2250602A patent/JPH04129280A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20060134969A (en) | Surface mount light emitting chip package | |
CN101893742A (en) | Surface mount multi-channel optocoupler | |
CN100379036C (en) | A surface mounting type light emitting diode | |
US20130308672A1 (en) | Chip array structure for laser diodes and packaging device for the same | |
US7589338B2 (en) | Semiconductor die packages suitable for optoelectronic applications having clip attach structures for angled mounting of dice | |
JP2002111065A (en) | Semiconductor light-emitting device | |
JPH03209781A (en) | Manufacture of light source for image sensor | |
JPS599982A (en) | Continuously assembled light emitting diode | |
JPH04129280A (en) | Optically coupled device | |
CN111668132A (en) | Laser heating device applied to fixedly connecting LED | |
CN211828768U (en) | Double-channel low-voltage photoelectric coupler | |
JPH08186284A (en) | Surface-mounting photocoupler and its manufacture | |
JP3027479B2 (en) | Light emitting diode light source | |
CN111769163A (en) | Infrared receiver | |
JPS6189683A (en) | Light emitting semiconductor device | |
JP2000208821A (en) | Chip type light-emitting diode | |
JPH04137772A (en) | Trichromatic element and display apparatus | |
JPS6373678A (en) | Semiconductor device | |
CN215955303U (en) | Packaging structure for chip | |
CN212365973U (en) | Infrared receiver | |
US20090200562A1 (en) | Integrated circuit die, integrated circuit package, and packaging method | |
JP3188058B2 (en) | Light emitting diode | |
JPS6068678A (en) | Photocoupling semiconductor device | |
KR940006788B1 (en) | Laser diode | |
KR940006787B1 (en) | Laser diode |