JPH04129120A - Manufacture of electrode material - Google Patents
Manufacture of electrode materialInfo
- Publication number
- JPH04129120A JPH04129120A JP24879390A JP24879390A JPH04129120A JP H04129120 A JPH04129120 A JP H04129120A JP 24879390 A JP24879390 A JP 24879390A JP 24879390 A JP24879390 A JP 24879390A JP H04129120 A JPH04129120 A JP H04129120A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- melting point
- bismuth
- vessel
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007772 electrode material Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010949 copper Substances 0.000 claims abstract description 68
- 229910052802 copper Inorganic materials 0.000 claims abstract description 66
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 65
- 238000002844 melting Methods 0.000 claims abstract description 61
- 230000008018 melting Effects 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 48
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 47
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 9
- 239000011651 chromium Substances 0.000 claims description 26
- 229910052804 chromium Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 150000001879 copper Chemical class 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 19
- 230000008595 infiltration Effects 0.000 abstract description 7
- 238000001764 infiltration Methods 0.000 abstract description 7
- 150000002739 metals Chemical class 0.000 abstract description 6
- 230000020169 heat generation Effects 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 7
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches
Landscapes
- Manufacture Of Switches (AREA)
- High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
Abstract
Description
【発明の詳細な説明】
Ａ、産業上の利用分野
本発明は、低融点金属の分布のばらつきが少ない均質な
電極材料の製造方法に関し、特にビスマスを添加した銅
−クロム系の電極材、料（こ応用して好適なものである
。DETAILED DESCRIPTION OF THE INVENTION A. Industrial Field of Application The present invention relates to a method for producing a homogeneous electrode material with little variation in the distribution of low melting point metals, and in particular to copper-chromium based electrode materials and materials added with bismuth. (This is suitable for this application.
Ｂ９発明の概要
銅よりも高融点の金属粉末上に銅よりも低融点の金属を
充填した銅容器を載置するか、或いは更にこの銅容器上
に銅塊を載置し、これらを非酸化性雰囲気にて加熱保持
し、前記低融点金属の蒸散を抑制しつつ高融点金属の空
隙部分に銅及び低融点金属を溶浸させることにより、所
望の性能を有する均質な電極材料を製造し得るようにし
たものである。B9 Summary of the Invention A copper container filled with a metal having a lower melting point than copper is placed on a metal powder having a higher melting point than copper, or a copper lump is further placed on the copper container, and these are non-oxidized. A homogeneous electrode material having desired performance can be manufactured by infiltrating the voids of the high melting point metal with copper and the low melting point metal while heating and holding the electrode in a neutral atmosphere and suppressing evaporation of the low melting point metal. This is how it was done.
Ｃ９従来の技術
真空インタラプタの電極材料として要求される重要な性
能の一つとして、電流遮断性能の高いことが挙げられる
。C9 Prior Art One of the important performances required for the electrode material of a vacuum interrupter is high current interrupting performance.
近年、この電流遮断性能が非常に優れている銅−クロム
系の材料に、電流週断後の接触抵抗値の上昇を抑制する
目的でビスマスを添加したものを、真空インタラプタの
電極材料として使用することが試みられている。In recent years, copper-chromium materials, which have excellent current interrupting performance, with bismuth added in order to suppress the rise in contact resistance after current interruptions have been used as electrode materials for vacuum interrupters. That is what is being attempted.
従来、このビスマスを添加した銅−クロム系の電極材料
の製造方法としては、銅とクロムとビスマスとの混合粉
末を一括して焼結するようにしたものや、容器内に充填
されたクロムとビスマスとの混合粉末上に銅塊を載置し
、これらを非酸化性雰囲気にて銅の融点以上に加熱し、
クロム及びビスマスの空隙部分に銅塊を溶浸させるよう
にしたもの、或いは予め焼結された銅とクロムとからな
る多孔質の溶浸母材の空隙部分にビスマスを溶浸させる
ようにしたもの等が知られている。Conventionally, methods for producing bismuth-added copper-chromium electrode materials include sintering a mixed powder of copper, chromium, and bismuth all at once, or sintering a mixed powder of copper, chromium, and bismuth, or sintering a mixture of copper and chromium in a container. A copper ingot is placed on a mixed powder with bismuth, and these are heated above the melting point of copper in a non-oxidizing atmosphere.
A copper ingot is infiltrated into the voids of chromium and bismuth, or a porous infiltration base material made of pre-sintered copper and chromium is infiltrated with bismuth. etc. are known.
なお、ビスマスを添加した銅−クロム系の電極材料の組
成として一般的には、鋼が２０から９８重量％の範囲、
クロムが２から８０重量％の範囲、ビスマスが０．１か
ら１５重量％の範囲に調整されている。In addition, the composition of copper-chromium based electrode materials to which bismuth is added generally ranges from 20 to 98% by weight of steel;
Chromium is adjusted to a range of 2 to 80% by weight, and bismuth is adjusted to a range of 0.1 to 15% by weight.
Ｄ１発明が解決しようとする課題
ビスマスを添加した銅−クロム系の金属材料に対する従
来の製造方法の内、銅とクロムとビスマスとの混合粉末
を一括して焼結するようにした方法及びクロム及びビス
マスの空隙部分に銅塊を溶浸させるようにした方法では
、ビスマスは蒸気圧が高くて融点が低いことから、銅塊
を溶浸させる加熱工程において銅よりも融点の低いビス
マスの蒸発量が非常に多く、一つの容器内で製造される
電極材料中のビスマスの分布が著しく不均一となって製
品の均質性を損なう虞がある上、電極材料中に占めるビ
スマスの割合を設計通りに保つことが困難である。D1 Problem to be Solved by the Invention Among the conventional manufacturing methods for copper-chromium based metal materials added with bismuth, a method in which a mixed powder of copper, chromium, and bismuth is sintered all at once, and a method in which chromium and bismuth are sintered together. In the method of infiltrating copper ingots into the voids of bismuth, since bismuth has a high vapor pressure and a low melting point, the amount of evaporation of bismuth, which has a lower melting point than copper, is reduced during the heating process of infiltrating the copper ingots. In many cases, the distribution of bismuth in the electrode material manufactured in one container may become extremely uneven, which may impair the homogeneity of the product, and it is necessary to maintain the proportion of bismuth in the electrode material as designed. It is difficult to do so.
又、銅とクロムとの焼結体の空隙部分にビスマスを溶浸
させるようにした方法では、上述の如き不具合はないも
のの、所定量のビスマスを含有する電極材料を製造する
ためには、銅とクロムとの焼結体の空隙率の調整が極め
て重要となる。しかし、従来の方法では銅とクロムとの
焼結体を所望の空隙率に調整することが非常に難しいこ
とに加え、一つの焼結体内での空隙率のばらつきも多い
ことから、電極材料中のビスマスの分布が不均一となっ
て、製品の均質性を損なう虞があった。In addition, although the method of infiltrating bismuth into the voids of a sintered body of copper and chromium does not have the above-mentioned problems, it is necessary to It is extremely important to adjust the porosity of the sintered body of aluminum and chromium. However, with conventional methods, it is very difficult to adjust the porosity of a sintered body of copper and chromium to the desired porosity. There was a risk that the distribution of bismuth would become uneven, impairing the homogeneity of the product.
８０課題を解決するための手段
本発明による電極材料の製造方法は、銅よりも高融点の
スケルトンを構成する高融点金属の粉末上に銅よりも低
融点の低融点金属を収めた銅容器を載置し、更にこの銅
容器上に当該銅容器内を密封する銅製の蓋板を被せ、こ
れらを非酸化性雰囲気にて加熱保持し、前記低融点金属
及び銅を前記高融点金属の空隙部分に溶浸させるように
したことを特徴とするものである。80 Means for Solving the Problems The method for manufacturing an electrode material according to the present invention includes a copper container containing a low melting point metal having a lower melting point than copper on a high melting point metal powder constituting a skeleton having a higher melting point than copper. Then, a copper lid plate is placed on top of the copper container to seal the inside of the copper container, and these are heated and maintained in a non-oxidizing atmosphere, so that the low melting point metal and copper are removed from the voids of the high melting point metal. It is characterized by being infiltrated with.
なお、前記高融点金属としてはクロム等を挙げることが
できる。又、前記低融点金属としては粉末状のビスマス
等を挙げることができる。ここで、高融点金属としてク
ロムを採用すると共に低融点金属としてをビスマスを採
用したものにおいて、銅が２０重量％未満の場合には、
導電率が低下して発熱量が多（なり、逆に鋼が９８重量
％を越えると耐溶着性の低下や電流さい断値の増大をも
たらす。In addition, chromium etc. can be mentioned as said high melting point metal. Further, the low melting point metal may include powdered bismuth. Here, in a product that uses chromium as a high melting point metal and bismuth as a low melting point metal, if the copper content is less than 20% by weight,
The electrical conductivity decreases and the amount of heat generated increases (on the contrary, if the steel content exceeds 98% by weight, the welding resistance decreases and the current cutoff value increases).
又、クロムが２重量％未満の場合には、電流さい断値が
増大し、逆にクロムが８０重量％を越える場合には、電
流遮断性能が低下してしまう。一方、ビスマスが０．１
重量％未満の場合には、電流速断後の接触抵抗値を抑制
する効果が薄れてしまい、逆にビスマスが１５重量％を
越えると、耐電圧特性等の真空インタラプタとしての性
能に悪影響を及ぼす。Furthermore, if the chromium content is less than 2% by weight, the current interrupting value increases, whereas if the chromium content exceeds 80% by weight, the current interrupting performance decreases. On the other hand, bismuth is 0.1
If it is less than 15% by weight, the effect of suppressing the contact resistance value after a rapid current cutoff will be diminished, and if it exceeds 15% by weight, it will have an adverse effect on the performance as a vacuum interrupter, such as withstand voltage characteristics.
従って、高融点金属としてクロムを採用すると共に低融
点金属としてビスマスを採用したものにおいては、銅は
２０から９８重量％の範囲、クロムは２から８０重量％
の範囲、ビスマスは０．１から１５重量％の範囲にそれ
ぞれあることが望ましい。Therefore, in a product that uses chromium as a high melting point metal and bismuth as a low melting point metal, copper is in the range of 20 to 98% by weight, and chromium is in the range of 2 to 80% by weight.
The content of bismuth is preferably in the range of 0.1 to 15% by weight.
但し、さい断電流値に注目した場合、ビスマスの添加量
とさい断電流値との関係を表す第３図に示すように、２
Ａ以下のさい断電流値を得るためにはビスマスの添加量
を少なくとも２０重量％にしなければならない。そして
、Ｉへ以下のさい断電流値を得るためには、ビスマスを
６．０重量％以上添加する必要があるが、このビスマス
を１２重量％以上添加しても、さい断電流値をそれ以上
に減少させることが困難となることから、ビスマスは６
から１２重量％の範囲に収めることが特に有効となる。However, when focusing on the cutting current value, as shown in Figure 3, which shows the relationship between the amount of bismuth added and the cutting current value,
In order to obtain a cutting current value of A or less, the amount of bismuth added must be at least 20% by weight. In order to obtain the following cutting current value for I, it is necessary to add 6.0% by weight or more of bismuth, but even if this bismuth is added in an amount of 12% by weight or more, the cutting current value will not exceed 6.0% by weight. Since it is difficult to reduce bismuth to 6
It is particularly effective to keep the content within the range of 12% by weight.
Ｆ０作用
銅とこの銅よりも低融点の金属とを混合した場合、これ
らの融点が純粋な銅の融点よりも低下することは、周知
の事実である。It is a well-known fact that when F0 effect copper is mixed with a metal having a lower melting point than the copper, their melting points are lower than that of pure copper.
例えば、純粋な銅の融点は１０８３℃であり、純粋なビ
スマスの融点は２７１℃である。For example, pure copper has a melting point of 1083°C and pure bismuth has a melting point of 271°C.
ここで、銅に対するビスマスの混合割合とこの時のこれ
らの融点との関係を表す第４図に示すように、ビスマス
の混合割合が増大するにつれて、これらの融点が次第に
低下するような傾向を持つことが判る。As shown in Figure 4, which shows the relationship between the mixing ratio of bismuth to copper and these melting points, as the mixing ratio of bismuth increases, these melting points tend to gradually decrease. I understand that.
このため、銅容器内に低融点金属の粉末を収め、これを
非酸化性雰囲気にて加熱すると、低融点金属は密閉状態
の銅容器内で溶融する。Therefore, when powder of a low melting point metal is placed in a copper container and heated in a non-oxidizing atmosphere, the low melting point metal will melt in the sealed copper container.
そして、この低融点金属と接触する銅容器の内壁も溶融
を始め、まずこれらが高融点金属の空隙部分に溶浸し、
次いで銅製の蓋板の上端部が高融点金属の表面全体から
溶浸する。The inner wall of the copper container that comes into contact with this low melting point metal also begins to melt, and first these infiltrate into the voids of the high melting point metal.
The upper end of the copper lid plate is then infiltrated over the entire surface of the refractory metal.
この場合、低融点金属は密閉状態の銅容器内に収められ
ているため、低融点金属の蒸発が抑制された状態となる
。In this case, since the low melting point metal is contained in a sealed copper container, evaporation of the low melting point metal is suppressed.
この加熱操作に伴って高融点金属の粉末の空隙部分から
ガスが放出され、先に述べたようにして高融点金属の空
隙部分に銅と低融点金属とが次第に溶浸して行く。低融
点金属は電極材料自体の機械的強度を下げ、この電極材
料自体を変形し易くして電流遮断後の接触抵抗値の上昇
を抑制する。With this heating operation, gas is released from the voids in the high melting point metal powder, and copper and low melting point metal gradually infiltrate into the voids in the high melting point metal as described above. The low melting point metal lowers the mechanical strength of the electrode material itself, making the electrode material itself easily deformable and suppressing an increase in contact resistance after current interruption.
Ｇ、実施例
真空インタラプタは、その概略構造の一例を表す第８図
に示すようなものであり、相互に一直線状をなす一対の
リード棒１１，１２の対向端面には、それぞれ電極１３
．１４が一体的に設けである。これら電極１３．１４を
囲む筒状のシールド１５の外周中央部は、このシールド
１５を囲む一対の絶Ｒ￥１１６゜１７の間に挟まれた状
態で保持されている。G. Embodiment The vacuum interrupter is as shown in FIG. 8, which shows an example of its schematic structure, and electrodes 13 are provided on opposing end surfaces of a pair of lead rods 11 and 12 that are in a straight line with each other.
．． 14 is integrally provided. A central portion of the outer periphery of a cylindrical shield 15 surrounding these electrodes 13, 14 is held between a pair of absolute R 116° 17 surrounding the shield 15.
一方の前記リード棒１１は、一方の絶縁筒１６の一端に
接合された金属端板１８を気密に貫通した状態で、この
金属端板１８に一体的に固定されている。図示しない駆
動装置に連結される他方のり−ド棒１２は、他方の絶縁
筒１７の他端に気密に接合された他方の金属端板１９に
ベローズ２０を介して連結され、駆動装置の作動に伴っ
て電極１３．１４の対向方向に往復動可能に可動側の電
極１４が固定側の電極１３に対して開閉動作するように
なっている。One of the lead rods 11 is integrally fixed to the metal end plate 18 joined to one end of the insulating tube 16 while airtightly passing through the metal end plate 18 . The other lead rod 12, which is connected to a drive device (not shown), is connected via a bellows 20 to the other metal end plate 19, which is hermetically joined to the other end of the other insulating cylinder 17, and is connected to the other end plate 19, which is connected to the other end of the insulating cylinder 17, through a bellows 20, and is connected to the drive device. Accordingly, the movable electrode 14 is configured to open and close with respect to the fixed electrode 13 so as to be able to reciprocate in the opposite direction of the electrodes 13 and 14.
前記電極１３．１４は、クロム（Ｃｒ）と、銅（Ｃｕ）
と、これらクロムと銅との界面に分散するビスマス（Ｂ
ｉ）とからなる複合金属で構成される。The electrodes 13.14 are made of chromium (Cr) and copper (Cu).
and bismuth (B) dispersed at the interface between these chromium and copper.
i) It is composed of a composite metal consisting of.
本発明によるこの電極材料の製造方法の一例を第１図に
基づいて以下に記すと、まず１００メツシユの粒度のク
ロムの粉末を内径が６８ｍ＋のアルミナセラミックス製
の母材容器Ａ中ニ１７０ ｇ装入し、これを５ＸｌＯ−
５Ｔｏｒｒの真空炉内で脱ガスしながら１２００″Ｃに
加熱保持し、クロム粒子を相互に拡散結合させて多孔質
の溶浸母材Ｂを得る。An example of the method for manufacturing this electrode material according to the present invention will be described below based on FIG. 1. First, chromium powder with a particle size of 100 mesh is placed in a 170 g container A made of alumina ceramics with an inner diameter of 68 m+. and add 5XlO-
It is heated and maintained at 1200''C while degassing in a 5 Torr vacuum furnace, and the chromium particles are mutually diffused and bonded to obtain a porous infiltrated base material B.
一方、外径が６０ｕｎで高さが１７−２肉厚が２Ｂの銅
製の容器Ｃ（重量が１０７．５ｇ）内に一２７５メツシ
ュの粒度のビスマスＤを７０ｇ充填し、更にこの銅製の
容器Ｃに外径が５６ｍで肉厚が２ｍｍ（重量が４４ｇ）
の銅製の蓋板Ｅを嵌め込み、これを前記溶浸母材Ｂ上に
載置すると共に更に蓋板Ｅの上に１９０ｇの銅塊Ｆを載
せる。そして、アルミナセラミックス製の蓋板Ｇを被せ
ることにより、内部を密閉状態に保持した母材容器Ａを
５×１０−５７ｏｒｒの真空溶解炉にて４０分間脱ガス
しつつ１１００°Ｃに加熱保持し、多孔質の溶浸母材Ｂ
の空隙部分に銅及びビスマスを溶浸させ、得られる電極
材料を母材容器Ａから出して直径６０ｍｍで厚さが１０
ｍｍの円板状に機械加工した。On the other hand, 70g of bismuth D with a particle size of 1275 mesh was filled into a copper container C (weighing 107.5g) with an outer diameter of 60un and a height of 17-2 and a wall thickness of 2B. The outer diameter is 56 m and the wall thickness is 2 mm (weight 44 g).
A copper lid plate E of 1 is fitted and placed on the infiltration base material B, and a 190 g copper ingot F is further placed on the lid plate E. Then, by covering the lid plate G made of alumina ceramics, the base material container A, whose inside was kept in a sealed state, was heated and maintained at 1100°C while degassing for 40 minutes in a 5 x 10-57 orr vacuum melting furnace. , porous infiltration base material B
Copper and bismuth are infiltrated into the void part of the electrode material, and the obtained electrode material is taken out from the base material container A and has a diameter of 60 mm and a thickness of 10 mm.
It was machined into a disk shape of mm.
このようにして、 Ｃｕ ： ４５重量％ Ｃｒ：４５重量％ Ｂｉ：１０重量％ からなる電極材料を作成した。In this way, Cu: 45% by weight Cr: 45% by weight Bi: 10% by weight An electrode material consisting of
この方法によって、合計で２５の試料を作成し、電極材
料中に占めるビスマスの割合を誘導結合高周波プラグｖ
（Ｉ ＣＰ ：ＩｎｄｕｃｔｉｖｅｌｙＣｏｕｐｌｅ
ｄ Ｐｌａｓｍａ）分光分析法により測定した結果、ビ
スマスの割合の平均値が１０重量％でその標準偏差が２
％となり、ビスマスの割合のばらつきの小さいことが判
明した。By this method, a total of 25 samples were prepared, and the proportion of bismuth in the electrode material was determined by inductively coupled high-frequency plug v
(ICP: Inductively Couple
d Plasma) As a result of measurement by spectroscopic analysis, the average value of the proportion of bismuth was 10% by weight, and its standard deviation was 2.
%, and it was found that the variation in the proportion of bismuth was small.
なお、容器Ｃの底板部分の厚みを他の部分よりも薄く設
定することにより、ビスマスＤが銅に囲まれた状態て溶
浸母材Ｂ中に溶浸させることが可能となり、蓋板Ｅて密
閉された容器Ｃ内のビスマスＤの蒸発をより一層抑制す
ることができる。又、本実施例では溶浸母材Ｂであるク
ロムの多孔質焼結体の上に、ビスマスＤを収めた容器Ｃ
を載置するようにしたが、クロムの焼結工程を省略し、
その粉末上にビスマスＤを収めた容器Ｃを載置し、これ
らをクロムの空隙部分に溶浸させても同様な結果を得る
ことができる。更に、本実施例では蓋板Ｅの上に銅塊Ｆ
を載せるようにしたが、蓋板Ｅと銅塊Ｆとを一体化して
単一の肉厚の蓋板とすることも当然可能である。In addition, by setting the thickness of the bottom plate part of the container C to be thinner than other parts, it becomes possible to infiltrate the bismuth D into the infiltration base material B while being surrounded by copper, and the thickness of the bottom plate part of the container C becomes thinner than the other parts. Evaporation of bismuth D in the sealed container C can be further suppressed. In addition, in this example, a container C containing bismuth D is placed on a porous sintered body of chromium, which is the infiltration base material B.
However, the chromium sintering process was omitted,
A similar result can be obtained by placing a container C containing bismuth D on top of the powder and infiltrating it into the voids of chromium. Furthermore, in this embodiment, a copper ingot F is placed on the lid plate E.
However, it is of course possible to integrate the lid plate E and the copper ingot F into a single thick lid plate.
Ｈ９発明の効果
本発明の電極材料の製造方法によると、蒸発し易い低融
点金属を銅容器内に密閉した状態で高融点金属の粉末上
に載置し、この高融点金属の空隙部分に銅及び低融点金
属を溶浸させるようにしたので、低融点金属の蒸発量を
従来の方法よりも大幅に抑制することが可能となり、電
極材料中の低融点金属の分布が均一となって製品の均質
性が向上し、電極材料中に占める低融点金属の割合を設
計通りに保つことができる。H9 Effects of the Invention According to the method for manufacturing an electrode material of the present invention, a low melting point metal that easily evaporates is placed on a powder of a high melting point metal in a sealed state in a copper container, and copper is poured into the voids of the high melting point metal. By infiltrating the low melting point metal and the low melting point metal, it is possible to significantly suppress the amount of evaporation of the low melting point metal compared to the conventional method, and the distribution of the low melting point metal in the electrode material becomes uniform, making it possible to improve the quality of the product. Homogeneity is improved, and the proportion of low melting point metal in the electrode material can be maintained as designed.
この結果、所望のさい断電流値を有する電極材料を製造
できると共に多数回の開閉操作後でも接触抵抗値が低く
安定しているため、開閉のだめの操作装置を小形化でき
ると共に発熱が少ないことと相俟ってキユービクルを小
形化できる。As a result, it is possible to manufacture an electrode material with a desired cutting current value, and the contact resistance value remains low and stable even after multiple opening/closing operations, making it possible to downsize the opening/closing device and generate less heat. Together, the cubicle can be made smaller.
第１図は本発明による電極材料の製造方法の一実施例を
表す断面図、第２図は真空インタラプタの一例を表す断
面図、第３図はビスマスの添加量とさい断電流値との関
係を表すグラフ、第４図は銅に対するビスマスの割合と
これらの融点との関係を表すグラフである。
又、図中の符号てＡは母材容器、Ｂは溶浸母材、Ｃは容
器、Ｄはビスマス、Ｅ、Ｇは蓋板、Ｆは銅塊、１１．１
２はリード棒、ｌ ３． ｌ ４は電極である。
特許出願人 株式会社 明 電 舎
代理人 弁理士 光石英俊（他１名）
第
を
図
本発明１こよる電極材料の製造
方法の一実施例を表す断面図
Ａ：母材容器
Ｂ：溶浸母材
Ｃ：容器
Ｄ＝ビスマス
Ｅ、Ｇ：蓋板
「：銅塊
第２図
真空インタラプタの断面図
＋３．＋４：電極
第３図
ざＬ１断電流値の変化を表すグラフ
第４
図
銅−ビスマス複合金属の
融点の変化を表すグラフFig. 1 is a cross-sectional view showing an example of the method for producing an electrode material according to the present invention, Fig. 2 is a cross-sectional view showing an example of a vacuum interrupter, and Fig. 3 is the relationship between the amount of bismuth added and the cutting current value. FIG. 4 is a graph showing the relationship between the ratio of bismuth to copper and their melting points. Also, in the figure, A is a base material container, B is an infiltrated base material, C is a container, D is bismuth, E and G are lid plates, F is a copper ingot, 11.1
2 is the lead rod, l 3. l4 is an electrode. Patent Applicant Meidensha Co., Ltd. Agent Patent Attorney Hidetoshi Mitsuishi (and one other person) Cross-sectional view showing an embodiment of the method for manufacturing an electrode material according to the present invention 1 A: Base material container B: Infiltration base Material C: Container D = Bismuth E, G: Lid plate: Copper block Figure 2 Cross-sectional view of vacuum interrupter +3.+4: Electrode Figure 3 Graph showing changes in L1 disconnection current value Figure 4 Copper-bismuth composite Graph showing changes in melting point of metals
Claims (3)
属の粉末上に銅よりも低融点の低融点金属を収めた銅容
器を載置し、更にこの銅容器上に当該銅容器内を密封す
る銅製の蓋板を被せ、これらを非酸化性雰囲気にて加熱
保持し、前記低融点金属及び銅を前記高融点金属の空隙
部分に溶浸させるようにしたことを特徴とする電極材料
の製造方法。(1) A copper container containing a low-melting point metal with a lower melting point than copper is placed on top of a powder of a high-melting point metal that constitutes a skeleton with a higher melting point than copper, and the inside of the copper container is placed on top of this copper container. An electrode material characterized in that it is covered with a copper lid plate for sealing and heated and held in a non-oxidizing atmosphere to infiltrate the low melting point metal and copper into the voids of the high melting point metal. Production method.
項（１）に記載した電極材料の製造方法。(2) The method for manufacturing an electrode material according to claim (1), wherein the high melting point metal is chromium.
する請求項（１）に記載した電極材料の製造方法。(3) The method for producing an electrode material according to claim (1), wherein the low melting point metal is bismuth powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24879390A JPH04129120A (en) | 1990-09-20 | 1990-09-20 | Manufacture of electrode material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24879390A JPH04129120A (en) | 1990-09-20 | 1990-09-20 | Manufacture of electrode material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04129120A true JPH04129120A (en) | 1992-04-30 |
Family
ID=17183484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24879390A Pending JPH04129120A (en) | 1990-09-20 | 1990-09-20 | Manufacture of electrode material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04129120A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5516975A (en) * | 1992-04-02 | 1996-05-14 | Senka Co. | Methods for processing leachate using completely closed system in monitor-type and stabilizing-type industrial and non-industrial waste treatment plant |
-
1990
- 1990-09-20 JP JP24879390A patent/JPH04129120A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5516975A (en) * | 1992-04-02 | 1996-05-14 | Senka Co. | Methods for processing leachate using completely closed system in monitor-type and stabilizing-type industrial and non-industrial waste treatment plant |
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