JPH04123263U - Compound semiconductor single crystal manufacturing equipment - Google Patents
Compound semiconductor single crystal manufacturing equipmentInfo
- Publication number
- JPH04123263U JPH04123263U JP2892591U JP2892591U JPH04123263U JP H04123263 U JPH04123263 U JP H04123263U JP 2892591 U JP2892591 U JP 2892591U JP 2892591 U JP2892591 U JP 2892591U JP H04123263 U JPH04123263 U JP H04123263U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- quartz boat
- compound semiconductor
- quartz
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 150000001875 compounds Chemical class 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000010453 quartz Substances 0.000 claims abstract description 36
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 239000003708 ampul Substances 0.000 claims abstract description 6
- 150000004767 nitrides Chemical class 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 7
- 229910052582 BN Inorganic materials 0.000 description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
(57)【要約】
【目的】石英ボートの熱変形を防止して単結晶を安定に
成長させる化合物半導体単結晶製造装置を提供する。
【構成】原料融液の入った石英ボートを密閉された石英
アンプル内に配置し原料融液を徐々に固化させて単結晶
を育成する化合物半導体単結晶製造装置において、石英
ボートの外側に窒化物の膜をコーティングし、結晶成長
工程において石英ボートの熱変形を抑止させた。
(57) [Summary] [Objective] To provide a compound semiconductor single crystal production device that prevents thermal deformation of a quartz boat and stably grows a single crystal. [Structure] In a compound semiconductor single crystal manufacturing equipment in which a quartz boat containing a raw material melt is placed in a sealed quartz ampoule and the raw material melt is gradually solidified to grow a single crystal, a nitride is placed outside the quartz boat. coating to suppress thermal deformation of the quartz boat during the crystal growth process.
Description
【０００１】0001
本考案は、化合物半導体単結晶製造装置、特に砒化ガリウム（ＧａＡｓ）の単 結晶を製造するのに有利な、装置の改良に関するものである。 This invention is a compound semiconductor single crystal manufacturing device, especially gallium arsenide (GaAs) single crystal manufacturing equipment. The present invention relates to improvements in equipment that are advantageous for producing crystals.
【０００２】0002
従来、ＧａＡｓ等の化合物半導体の単結晶を製造する場合は、密閉した石英ア ンプルを用い、その中に、原料融液と種結晶の入った石英ボート、並びに揮発性 元素を夫々別々に配置して、定められた温度制御を行いながら、固液界面を移動 させて単結晶を成長させる、いわゆる水平ブリッジマン（ＨＢ方式）等が用いら れていた。 Conventionally, when producing single crystals of compound semiconductors such as GaAs, sealed quartz apertures were used. A quartz boat containing the raw material melt and seed crystals, as well as a volatile Each element is placed separately and moved across the solid-liquid interface while controlling the specified temperature. The so-called horizontal Bridgman (HB method), which grows single crystals by It was
【０００３】 このように化合物半導体の製造時には、石英ガラスを使用する製造技術が多い が、これは石英ガラスの純度が高く、又、耐熱性及び強度に優れている点による ものである。0003 In this way, many manufacturing technologies use quartz glass when manufacturing compound semiconductors. However, this is due to the high purity of quartz glass, as well as its excellent heat resistance and strength. It is something.
【０００４】 しかしながら、ＧａＡｓ単結晶を製造する場合のように、石英ガラスの徐冷点 １１８０℃に対して、ＧａＡｓの融点が１２３８℃と高温となる場合は、石英ガ ラスに膨張又は収縮等の熱変形が生ずる欠点があった。0004 However, as in the case of producing GaAs single crystals, the annealing point of quartz glass When the melting point of GaAs is as high as 1238°C compared to 1180°C, quartz glass is used. There was a drawback that thermal deformation such as expansion or contraction occurred in the lath.
【０００５】 特に、ＧａＡｓ融液の入った石英ボートは、ＧａＡｓの重量もあり大きな熱変 形が生ずる。熱変形が著しい場合は、このＧａＡｓ融液が石英ボートから落下す ることもある。[0005] In particular, quartz boats containing GaAs melt have large thermal fluctuations due to the weight of GaAs. A form arises. If the thermal deformation is significant, this GaAs melt may fall from the quartz boat. Sometimes.
【０００６】 また、熱変形が発生した石英ボートから得られた単結晶インゴットは高さが低 くなるため、規定寸法のウェーハが得られない。[0006] In addition, single crystal ingots obtained from thermally deformed quartz boats have a low height. As a result, wafers with specified dimensions cannot be obtained.
【０００７】[0007]
【考案の効果】 即ち図３に示すように、石英ボート２の熱変形が発生すると、ボート幅Ｗ1 が 広がりＷ2 となるとともに融液３の高さＨ1 は、Ｈ2 と低くなる。[Effect of the invention] That is, as shown in FIG. 3, when thermal deformation of the quartz boat 2 occurs, the boat width W 1 widens to become W 2 and the height H 1 of the melt 3 becomes as low as H 2 .
【０００８】 図４に示すように、得られたＧａＡｓ単結晶を、斜めに切断して直径５０mmの円 形ウェハを取得しようとしても、切断する角度は結晶面方位から一定のため高さ が低くなったぶん切断したウェーハの長さも小さくなり（ｌ2 ＜ｌ1 ）、ｌ2 は ５０mm以下となってしまうものである。As shown in FIG. 4, even if an attempt is made to cut the obtained GaAs single crystal diagonally to obtain a circular wafer with a diameter of 50 mm, the cutting angle is constant from the crystal plane orientation, so the height will be low. Presumably, the length of the cut wafer will also be small (l 2 <l 1 ), and l 2 will be less than 50 mm.
【０００９】[0009]
本考案の目的は、前記した従来技術の欠点を解消し、石英ボートの熱変形を防 止して単結晶を安定に成長させることのできる化合物半導体単結晶製造装置を提 供することにある。 The purpose of the present invention is to eliminate the drawbacks of the prior art described above and prevent thermal deformation of quartz boats. We propose a compound semiconductor single crystal production device that can stably grow single crystals without stopping the process. It is about providing.
【００１０】0010
即ち本考案は、原料融液の入った石英ボートを、密閉された石英アンプル内に 配置し、原料融液を徐々に固化させて単結晶を育成する、化合物半導体単結晶製 造装置において、石英ボートの外側に窒化物の膜をコーティングし、結晶成長工 程において石英ボートの熱変形を抑止させたものである。 That is, the present invention places a quartz boat containing raw material melt in a sealed quartz ampoule. Made of compound semiconductor single crystal, the raw material melt is gradually solidified to grow a single crystal. In the crystal growth equipment, a nitride film is coated on the outside of the quartz boat to perform the crystal growth process. In this process, thermal deformation of the quartz boat was suppressed.
【００１１】 本考案に於て用いられる窒化物の種類としては、窒化硼素（以下ＢＮと言う） 、窒化アルミニウム（ＡｌＮ）、窒化ケイ素（Ｓｉ3 Ｎ4 ）等が好ましい。Preferred types of nitride used in the present invention include boron nitride (hereinafter referred to as BN), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), and the like.
【００１２】 即ち、窒化物は高温に耐える素材として半導体用材料にも利用されているのも ので、中でも窒化硼素（Boror Nitride ）は耐熱性が約3000℃と極めて高く電気 絶縁性、化学安定性にも優れ、無毒である事から応用範囲が広い。0012 In other words, nitrides are also used in semiconductor materials as materials that can withstand high temperatures. Among them, boron nitride has an extremely high heat resistance of approximately 3000°C and is used for electrical purposes. It has excellent insulation properties and chemical stability, and is non-toxic, so it has a wide range of applications.
【００１３】 また、石英ガラスが軟化し始める徐冷点1180℃付近においても強度が強く変形 することはないためである。[0013] In addition, it remains strong and deforms even near the annealing point of 1180℃, where quartz glass begins to soften. This is because there is nothing to do.
【００１４】 石英ボートにＢＮをコーティングするためには、常圧で1000℃以下のＣＶＤ反 応で生成できるアモルファスＢＮ（以下αＢＮと言う）が適している。[0014] To coat a quartz boat with BN, CVD reaction at normal pressure and temperatures below 1000°C is required. Amorphous BN (hereinafter referred to as αBN), which can be produced by reaction, is suitable.
【００１５】 原料ガスはＢ2 Ｈ6 とＮＨ3 を用い、次の反応条件で生成する。The raw material gas is produced using B 2 H 6 and NH 3 under the following reaction conditions.
【００１６】[0016]
【数１】 [Math 1]
【００１７】 熱変形を抑止するためのＢＮ膜の厚さは、石英ボートの肉厚にも依存するが１ mm〜４mmの範囲が経済性から考えて適当である。[0017] The thickness of the BN film to suppress thermal deformation depends on the wall thickness of the quartz boat. A range of mm to 4 mm is appropriate from an economic point of view.
【００１８】[0018]
図１は、化合物半導体単結晶製造装置の一実施例を示す要部断面図である。図 において、１は石英アンプルであり、内部には、一方に石英ボート２が配置され 、他方にはＡｓ５が置かれている。石英ボート２にはＧａＡｓ融液３が充填され 、先端に種結晶４が配置されている。石英ボート２とＡｓ５の間は拡散障壁６で 仕切られている。 FIG. 1 is a cross-sectional view of essential parts showing an embodiment of a compound semiconductor single crystal manufacturing apparatus. figure , 1 is a quartz ampoule, and a quartz boat 2 is arranged on one side inside. , As5 is placed on the other side. The quartz boat 2 is filled with GaAs melt 3. , a seed crystal 4 is placed at the tip. There is a diffusion barrier 6 between the quartz boat 2 and As5. It's partitioned off.
【００１９】 本考案は、図１のＡ−Ａ´線断面である図２に示すように、石英ボート２の外 面に、窒化硼素７をコーティグしたことを特徴とするものである。[0019] As shown in FIG. 2, which is a cross section taken along line A-A′ in FIG. It is characterized by having its surface coated with boron nitride 7.
【００２０】 この状態で石英アンプル１内の圧力を５×１０-6Torr以下に真空排気して封じ 切りこれを高低二連式の電気炉にセットして石英ボート２の部分を１２００℃以 上、Ａｓ側を６１０℃として石英ボート２の長さ方向に１℃／cmの温度傾斜を与 えながら、種結晶４近辺の温度を１２３８℃に調整し、種結晶４を若干溶解させ た後、１℃／時の速度で降温してＧａＡｓ単結晶を成長させた。ついで全体を固 化させ、更に１００℃／時の速度で室温まで冷却してＧａＡｓ単結晶の製造を完 了した。In this state, the pressure inside the quartz ampoule 1 is evacuated to 5×10 −6 Torr or less, sealed, and then set in a high-low double electric furnace to heat the quartz boat 2 to a temperature of 1200° C. or higher. While setting the As side to 610°C and giving a temperature gradient of 1°C/cm in the length direction of the quartz boat 2, the temperature near the seed crystal 4 was adjusted to 1238°C, and after slightly dissolving the seed crystal 4, the temperature was increased to 1°C. A GaAs single crystal was grown by lowering the temperature at a rate of /hour. The whole was then solidified and further cooled to room temperature at a rate of 100° C./hour to complete the production of a GaAs single crystal.
【００２１】 このようにしてＧａＡｓ単結晶の製造を行ったが製造時における、石英ボート ２の熱変形は極めて僅少で、窒化硼素コーティングによる効果を確認することが できた。[0021] The GaAs single crystal was produced in this way, but the quartz boat during production The thermal deformation of No. 2 was extremely small, and the effect of the boron nitride coating could be confirmed. did it.
【００２２】[0022]
以上説明したように本考案は次の効果を有するものであり、その実用価値は大 なるものである。 As explained above, this invention has the following effects, and its practical value is great. It is what it is.
【００２３】 (1) 石英ボートの熱変形を防止することができるので結晶成長を安定化させ、 品質の向上を図ることができる。[0023] (1) It can prevent thermal deformation of the quartz boat, thereby stabilizing crystal growth. Quality can be improved.
【００２４】 (2) 変形防止により石英ボートの再利用が可能となり経済的に有利となる。[0024] (2) By preventing deformation, the quartz boat can be reused, which is economically advantageous.
【００２５】 (3) 原料融液の落下が防止され、無駄作業を排除することができる。[0025] (3) Falling of the raw material melt is prevented and wasteful work can be eliminated.
【００２６】 (4) 石英ボートの熱変形防止により、所定のウェーハ形状を確保することがで きるため量産化が可能となる。[0026] (4) By preventing thermal deformation of the quartz boat, a predetermined wafer shape can be maintained. This makes mass production possible.
【図１】化合物半導体単結晶製造装置の一実施例を示す
要部断面図。FIG. 1 is a sectional view of essential parts showing an embodiment of a compound semiconductor single crystal manufacturing apparatus.
【図２】本考案の特徴である石英ボートに窒化硼素コー
ティングを施した一実施例を示す横断面図（図１のＡ−
Ａ´線断面）。[Fig. 2] A cross-sectional view showing an embodiment of a quartz boat coated with boron nitride, which is a feature of the present invention (A--A in Fig. 1).
A' line cross section).
【図３】石英ボートの熱変形例を示す説明図。FIG. 3 is an explanatory diagram showing an example of thermal deformation of a quartz boat.
【図４】結晶成長後に得られた単結晶からウェーハを切
断する実施例（ａ）、（ｂ）及び切断して得られたウエ
ーハ（ｃ）、（ｄ）を示す。FIG. 4 shows examples (a) and (b) in which wafers are cut from a single crystal obtained after crystal growth, and wafers (c) and (d) obtained by cutting.
１ 石英アンプル ２ 石英ボート ３ ＧａＡｓ融液 ４ ＧａＡｓ種結晶 ５ Ａｓ（硼素） ６ 拡散障壁 ７ 窒化硼素コーティング ８ ＧａＡｓ単結晶インゴット ９ 切断したＧａＡｓウェハ 1 Quartz ampoule 2 Quartz boat 3 GaAs melt 4 GaAs seed crystal 5 As (boron) 6 Diffusion barrier 7 Boron nitride coating 8 GaAs single crystal ingot 9 Cut GaAs wafer
Claims (1)
た石英アンプル内に配置し、該原料融液をその一端側か
ら徐々に固化させて、半導体単結晶を育成する、化合物
半導体単結晶製造装置において、前記石英ボートの外面
に、窒化物の膜をコーティングして構成されたことを特
徴とする、化合物半導体単結晶製造装置。Claim 1: A compound semiconductor single crystal boat in which a quartz boat containing a raw material melt is placed in a sealed quartz ampoule, and the raw material melt is gradually solidified from one end to grow a semiconductor single crystal. A compound semiconductor single crystal manufacturing apparatus, characterized in that the crystal manufacturing apparatus is constructed by coating the outer surface of the quartz boat with a nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2892591U JPH04123263U (en) | 1991-04-24 | 1991-04-24 | Compound semiconductor single crystal manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2892591U JPH04123263U (en) | 1991-04-24 | 1991-04-24 | Compound semiconductor single crystal manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04123263U true JPH04123263U (en) | 1992-11-06 |
Family
ID=31912922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2892591U Pending JPH04123263U (en) | 1991-04-24 | 1991-04-24 | Compound semiconductor single crystal manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04123263U (en) |
-
1991
- 1991-04-24 JP JP2892591U patent/JPH04123263U/en active Pending
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