JPH0411929B2 - - Google Patents
Info
- Publication number
- JPH0411929B2 JPH0411929B2 JP11853084A JP11853084A JPH0411929B2 JP H0411929 B2 JPH0411929 B2 JP H0411929B2 JP 11853084 A JP11853084 A JP 11853084A JP 11853084 A JP11853084 A JP 11853084A JP H0411929 B2 JPH0411929 B2 JP H0411929B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- composition
- layer
- producing
- information recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims 3
- 238000007738 vacuum evaporation Methods 0.000 claims 2
- 238000000465 moulding Methods 0.000 claims 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 29
- 239000008188 pellet Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 13
- 238000007740 vapor deposition Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 229910005793 GeO 2 Inorganic materials 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001941 electron spectroscopy Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- -1 Cu and Al Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11853084A JPS60263356A (ja) | 1984-06-08 | 1984-06-08 | 光学情報記録薄膜の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11853084A JPS60263356A (ja) | 1984-06-08 | 1984-06-08 | 光学情報記録薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60263356A JPS60263356A (ja) | 1985-12-26 |
JPH0411929B2 true JPH0411929B2 (enrdf_load_stackoverflow) | 1992-03-03 |
Family
ID=14738876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11853084A Granted JPS60263356A (ja) | 1984-06-08 | 1984-06-08 | 光学情報記録薄膜の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60263356A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2860790B1 (fr) * | 2003-10-09 | 2006-07-28 | Snecma Moteurs | Cible destinee a etre evaporee sous faisceau d'electrons, son procede de fabrication, barriere thermique et revetement obtenus a partir d'une cible, et piece mecanique comportant un tel revetement |
JP5303245B2 (ja) * | 2007-11-26 | 2013-10-02 | Hoya株式会社 | 蒸着膜の形成方法、及び光学部材の製造方法 |
JP2009167448A (ja) * | 2008-01-11 | 2009-07-30 | Sumitomo Electric Ind Ltd | 全固体薄膜電池、正極および薄膜形成方法 |
-
1984
- 1984-06-08 JP JP11853084A patent/JPS60263356A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60263356A (ja) | 1985-12-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5896553A (en) | Single phase tungsten-titanium sputter targets and method of producing same | |
JPH0249238B2 (enrdf_load_stackoverflow) | ||
JPH03162570A (ja) | スパッタリングターゲットおよびその製造方法 | |
US6682636B2 (en) | Physical vapor deposition targets and methods of formation | |
JPH0411929B2 (enrdf_load_stackoverflow) | ||
US3920860A (en) | Method for producing mixed crystal layers from cds and cdse | |
KR100351778B1 (ko) | 자기광학기록매체제조용합금타깃 | |
DE3627775C2 (enrdf_load_stackoverflow) | ||
US5561833A (en) | Method of making high oxygen chromium target | |
JP4276849B2 (ja) | Ge−Cr合金スパッタリングターゲット | |
JPS61156545A (ja) | 情報記録媒体および記録方法 | |
US4626480A (en) | Magnetic recording medium comprising a vacuum-deposited magnetic film of a magnetic material and a tungsten oxide and method for making the same | |
JPH043574B2 (enrdf_load_stackoverflow) | ||
JPS61204844A (ja) | 光学情報記録再生デイスクの製造方法 | |
JPH0465462B2 (enrdf_load_stackoverflow) | ||
JPH0737180B2 (ja) | 光学情報記録部材 | |
JPH0243822B2 (enrdf_load_stackoverflow) | ||
JPS5827604B2 (ja) | チヨウデンドウタイノセイホウ | |
JP2973390B2 (ja) | 金属あるいは金属酸化物微粒子を分散させた金属の製造方法 | |
JP2623421B2 (ja) | 金属硫化物の微粒子を分散させた高分子複合物の製造方法 | |
US7153468B2 (en) | Physical vapor deposition targets and methods of formation | |
JPH05311421A (ja) | 鉛を含む強誘電体薄膜形成用ターゲット材の製造方法 | |
JPH03193605A (ja) | 酸化物超電導薄膜形成用ターゲット材の製造方法 | |
JPS6337071B2 (enrdf_load_stackoverflow) | ||
JPH07237906A (ja) | 酸化物超電導体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |