JPH0411336A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH0411336A JPH0411336A JP2113383A JP11338390A JPH0411336A JP H0411336 A JPH0411336 A JP H0411336A JP 2113383 A JP2113383 A JP 2113383A JP 11338390 A JP11338390 A JP 11338390A JP H0411336 A JPH0411336 A JP H0411336A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- recording thin
- recording
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 239000000155 melt Substances 0.000 claims abstract 4
- 229910052714 tellurium Inorganic materials 0.000 claims abstract 4
- 239000010408 film Substances 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 150000001786 chalcogen compounds Chemical class 0.000 claims description 6
- 229910052798 chalcogen Inorganic materials 0.000 abstract description 4
- 150000001787 chalcogens Chemical class 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 230000010349 pulsation Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017000 As2Se3 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052958 orpiment Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はレーザービーム等により、情報を高密嵐 大容
量で記録再生及び消去できる光記録媒体に関するもので
あも
従来の技術
光デイスクメモリに関しては ＴｅとＴｅＯ２を主成分
とするＴ ｅ ０ｘ（０＜ ｘ ＜２．０）薄膜を用い
た追記型のディスクがあム また繰り返し記録・消去が
可能な消去ディスクが実用化されつつあ４この消去ディ
スクはレーザ光により記録薄膜を加熱し 溶融し 急冷
することにより、非晶質化して情報を記録し またこれ
を加熱し徐冷することにより結晶化して消去することが
できるものである力（この記録薄膜の材料としてはＳ、
Ｒ，○Ｖｓｈｉｎｓｋｙ （ニス・アール・オプシ
ンスキー）氏等のカルコゲン材料Ｇｅ１５Ｔｅ８１Ｓ
ｂ２Ｓ２等が知られている。ま；２．、、Ａｓ２Ｓ３や
Ａｓ２Ｓｅ３あるいはＳｂ２Ｓｅ３等カルコゲン元素と
周期律表第Ｖ族あるいはＧｅ等の第 族元素等の組み合
せからなる薄膜等が広く知られていも
これらの記録薄膜をレーザ光ガイド用の溝を設けた基板
に形成し 光ディスクとして用いることができも
これらのディスクにレーザ光で情報を記録し その情報
を消去する方法としては あらかじめ記録薄膜を結晶化
させておき、これに約１μｍに絞ったレーザ光を情報に
対応させて強度変調を施し例えば円盤状の記録ディスク
を回転せしめて照射した場合、このピークパワーレーザ
光照射部位は記録薄膜の融点以上に昇温し かつ急冷し
非晶質化したマークとして情報の記録がおこなえもま
た変調バイアスパワーレーザ光照射部位！よ 記録薄膜
の結晶化温度以上に昇温し 既記緑信号情報を消去する
働きがありオーバライドできも このように記録薄膜は
レーザ光によって融点以上に昇温し また結晶化温度以
上に昇温されるものであム このため記録薄膜の下面お
よび上面に 耐熱性のすぐれた誘電体層を基板および接
着層に対する保護層として設けているのが一般的であム
これらの誘電体層の熱伝導特性により、昇温および急冷
徐冷の特性が変わるものであるか収 誘電体層の材質
あるいは層構成を選ぶことによって記録および消去の特
性を決めることができるものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical recording medium on which information can be recorded, reproduced and erased in a high density and large capacity using a laser beam or the like. A write-once disk using a thin film of T e 0x (0< By heating the recording thin film with a laser beam, melting it, and rapidly cooling it, it becomes amorphous and records information, and by heating and slowly cooling it, it crystallizes and erases the information (this recording thin film The material is S,
Chalcogen material Ge15Te81S by Mr. R,○Vshinsky (Nis R. Opshinsky) et al.
b2S2 etc. are known. Well; 2. Although thin films made of a combination of a chalcogen element such as As2S3, As2Se3, or Sb2Se3 and a group V element of the periodic table or a group element such as Ge are widely known, these recording thin films have been provided with grooves for guiding laser light. The recording film can be formed on a thin substrate and used as an optical disk. However, the method of recording information on these disks with laser light and erasing that information is to crystallize the recording thin film in advance, and then apply laser light focused to about 1 μm. When the peak power laser beam is irradiated with intensity modulation corresponding to the information, for example by rotating a disc-shaped recording disk, the temperature of the peak power laser beam irradiation area rises above the melting point of the recording thin film and rapidly cools, resulting in an amorphous mark. Information can also be recorded as a modulated bias power laser beam irradiation area! The recording thin film is heated above the crystallization temperature of the recording thin film and has the function of erasing the recorded green signal information, so it can be overridden. For this reason, dielectric layers with excellent heat resistance are generally provided on the lower and upper surfaces of the recording thin film as protective layers for the substrate and adhesive layer.Thermal conductivity characteristics of these dielectric layers The recording and erasing characteristics can be determined by selecting the material or layer structure of the dielectric layer.
発明が解決しようとする課題
記録薄膜を加熱昇温し 溶融急冷非晶質化および加熱昇
温結晶化の手段を用いる情報言己録および消去可能なオ
ーバライド記録媒体における課題は記録・消去の繰り返
し特性と消去特性であム記録・消去の繰り返し特性につ
いて１よ 記録・消去の加熱 冷却の多数回の繰り返し
によるディスク基板あるいは誘電体層の熱的な損傷によ
るノイズの埋火 また損傷は無（てＬ 記録・消去の繰
り返しに伴う加熱 冷却の繰り返しによる誘電体層の脈
動によって、記録薄膜材料がディスク回転方向の案内溝
に沿って移動する等 記録・消去の繰り返し特性の劣化
が課題であった
消去特性についてはＴｅを含む非晶質膜は その融点は
代表的なもので４００℃〜９００℃と広い温度範囲にあ
も
これらの記録薄膜にレーザ光を照射し 昇温徐冷するこ
とにより結晶化が行えも この温度は一般的に融点より
低い結晶化温度領域であム またこの結晶化した膜に高
いパワーレベルのレーザ光をあて、その融点以上に加熱
するとその部分は溶融し急冷し 再び非晶質化してマー
クが形成できも記録マークとして非晶質化を選ぶと、こ
のマークは記録薄膜が溶融し急冷されて形成されるもの
であるか収 冷却速度が速いほど非晶質状態の均一なも
のが得られ信号振幅が向上すム 冷却速度が遅い場合は
マークの中心と周辺で非晶質化の程度に差が発生ず４
次に結晶化消去に際しては レザ光の照射により既に記
録が行われている非晶質マーク部を、結晶化温度以上に
昇温し結晶化させてこのマークを消去すム
この消去の時、マークの非晶質状態が均一な場合は均一
に結晶化されやすくなり消去特性が向上する力丈 記録
マークの非晶質状態が不均一な場合は結晶化消去の状態
が不均一となって消去特性が低下するという課題があっ
ち 本発明の目的は記録消去特性に優れ 記録・消去の
繰り返し特性の安定な光ディスクを提供することであム
課題を解決するための手段
本発明はレーザ光の照射により、そのエネルギを吸収し
て昇温 溶＠し 急冷して非晶質化する性質と、非晶質
の状態を昇温することにより結晶化する性質を有する記
録薄膜層がカルコゲン化合物からなり、この記録薄膜層
に Ｔｅ、Ｇｅ、ｓｂの中の少なくとも一つの元素の窒
化物または酸化物を含ませるものであ４
作用
すなわちカルコゲン化合物からなる記録薄膜層にＴｅ、
Ｇｅ、Ｓｂの中の少な（とも一つの元素の窒化物または
酸化物を含ませることで、記録消去の繰り返しに伴う誘
電体層の脈動によって、記録薄膜材料が案内溝に沿って
移動する現象を抑制することができ、 これによって記
録・消去の繰り返し特性を向上することかできるもので
あム また透明基板の一方の面に第一の誘電体層と、記
録薄膜層と、第二の誘電体層と、反射層とを順次形成し
第二の誘電体層の膜厚を第一の誘電体層の膜厚より薄
くすることによって、熱拡散層である反射層と記録薄膜
層を近づけることになり、記録薄膜層が急冷されるもの
であるから記録マークが均一な非晶質状態となって、記
録マークが不均一な場合に生じる結晶化消去時の不均一
な状態の発生を防止することができ、消去特性を向上さ
せることが出来るものであも
実施例
以下、本発明の一実施例を図面に基づいて説明する。第
１図において１はディスク基板でポリカーボネイト等の
樹脂基板からなっている。このディスク基板１はあらか
じめレーザ光案内用の溝を形成した樹脂基板あるいはフ
ォトポリマを用い黴いわゆる２Ｐ法で溝を形成したガラ
ス板、ガラス板に直接溝を形成した基板であってもよｔ
、Ｘｏ２は第一の誘電体層でＺｎＳ−８ｉ０２の混合膜
からなっており、膜厚は約１５０ηｍであ７１０３は記
録薄膜層でＴｅ、Ｇｅ、ＳｂとＴｅ、Ｇｅ、Ｓｂの中の
少なくとも一つの元素の窒化物または酸化物を含んでお
り、膜厚は約３０ｎｍであ７に、４は第二の誘電体層で
第一の誘電体層２と同じ材料からなっており、膜厚は約
２０ｎｍである。５はアルミニウム合金からなる反射層
で膜厚は約６０ｎｍである。Problems to be Solved by the Invention The problem with information recording and erasable override recording media that uses means of heating a recording thin film to increase its temperature, melting and quenching it into an amorphous state, and heating and heating it up to crystallize it, is to overcome the repeated recording and erasing characteristics. Regarding the repetitive characteristics of recording and erasing, there is no noise embedding due to thermal damage to the disk substrate or dielectric layer due to heating and cooling during recording and erasing, and there is no damage. Due to the pulsation of the dielectric layer due to repeated heating and cooling due to repeated recording and erasing, the recording thin film material moves along the guide groove in the direction of disk rotation, etc. Erasing characteristics that had the problem of deterioration of the repeated recording and erasing characteristics Regarding amorphous films containing Te, the melting point is typically 400°C to 900°C, which is a wide temperature range.By irradiating these recording thin films with laser light and gradually increasing the temperature, crystallization can be achieved. However, this temperature is generally in the crystallization temperature range lower than the melting point.If this crystallized film is heated above the melting point by shining a high-power laser beam on it, that part will melt and rapidly cool, becoming amorphous again. Even if a mark can be formed by amorphous recording, if amorphous recording is selected, the mark may be formed by melting the recording thin film and rapidly cooling it.The faster the cooling rate, the more uniform the amorphous state becomes. When the cooling rate is slow, there is no difference in the degree of amorphization between the center and the periphery of the mark.
Next, during crystallization erasing, the amorphous mark part where recording has already been performed is heated to a temperature higher than the crystallization temperature by irradiation with laser light to crystallize and erase this mark. If the amorphous state of the recording mark is uniform, it will be easier to crystallize uniformly and the erasing characteristics will improve.If the amorphous state of the recorded mark is uneven, the state of crystallization and erasing will be uneven and the erasing characteristics will be improved. An object of the present invention is to provide an optical disc with excellent recording and erasing characteristics and stable repeatable recording and erasing characteristics. The recording thin film layer is made of a chalcogen compound, which has the properties of absorbing that energy, heating up, melting, and rapidly cooling to become amorphous, and crystallizing an amorphous state by heating it. The thin film layer contains a nitride or oxide of at least one element among Te, Ge, and sb.
By including a small amount of nitride or oxide of one of Ge and Sb, the phenomenon in which the recording thin film material moves along the guide groove due to the pulsation of the dielectric layer due to repeated recording and erasing can be suppressed. In addition, a first dielectric layer, a recording thin film layer, and a second dielectric layer are provided on one surface of the transparent substrate. By sequentially forming the second dielectric layer and the reflective layer and making the second dielectric layer thinner than the first dielectric layer, the reflective layer, which is a heat diffusion layer, and the recording thin film layer can be brought closer together. Since the recording thin film layer is rapidly cooled, the recording mark becomes a uniform amorphous state, thereby preventing the occurrence of an uneven state during crystallization and erasure that occurs when the recording mark is uneven. Embodiment Hereinafter, an embodiment of the present invention will be explained based on the drawings.In FIG. The disk substrate 1 may be a resin substrate on which grooves for guiding laser light are formed in advance, a glass plate on which grooves are formed using a photopolymer using the so-called 2P method, or a substrate on which grooves are directly formed on a glass plate. t
, Xo2 is a first dielectric layer made of a mixed film of ZnS-8i02 and has a thickness of about 150 ηm, and 7103 is a recording thin film layer made of Te, Ge, Sb and at least one of Te, Ge, and Sb. The film contains nitrides or oxides of two elements, and the film thickness is approximately 30 nm. It is approximately 20 nm. Reference numeral 5 denotes a reflective layer made of an aluminum alloy and has a thickness of about 60 nm.
６は保護板で接着剤７によってディスク基板１に貼り合
わせていも
第１図の構成において記録・消去及び再生は矢Ｅｐ ８
の方向より、情報に応じて強度変調を施したレーザ光を
照射して、また反射光を検出して行うものであも この
誘電体層 記録薄膜層 反射層の形成方法として（よ
−膜内には真空蒸着あるいはスパッタ法が用いるられム
この時、Ｔｅ、Ｇｅ、Ｓｂからなる記録薄膜層３にＴ
ｅ、 Ｇｅ、 Ｓｂの中の少なくとも一つの元素の
窒化物または酸化物を含ませることによって、記録消去
の繰り返しに伴う誘電体層の脈動によって、記録薄膜材
料が案内溝に沿って移動する現象を抑制することができ
、これによって記録・消去の繰り返し特性を向上するこ
とができるものであっ九 第一、第二の誘電体層２、
４のＺｎＳ−３ｉ０２混合膜は５）０２の比率を２０ｍ
ｏｌ％にしているがこれに限定するものではなｔ〜 し
かしながらＳｉＯ２の比率を５ｍ０１％以下にすると、
ＺｎＳにＳｉＯ２を混合した時に得られる効果 すなわ
ち結晶粒径を小さくするという効果が小さくなり、 ５
’Ｏｍｏｌ！％以上にすると、 ＳｉＯ２膜の性質が大
きくなるものであるか収ＳｉＯ２の比率は５〜４０ｍｏ
ｌ％の範囲にするのが適当であっ九
さらに第二の誘電体層４の膜厚を約２０ｎｍと薄くして
いる力（これよって熱拡散層となる反射層５と記録薄膜
層３が近くなり、記録・消去時の記録薄膜層３の熱が急
速に反射層５に伝達されることになって、記録薄膜層３
を急冷する上で効果があるものであム
本実施例のディスク構成で、外径１３０ｍａ１８００
ｒｐｍ回転 線速度８ ｍ／ｓｅｃでｆ ｌ ＝３．４
３ＭＨｚの信号、 ｆ ２ ＝ １．０ＭＨｚの信号の
オーバーライド特性を測定し九 オーバーライドは １
個のサークルスポットで約１μｍのレーザ光により、高
いパワレベル１６ｍＷ、 低いパワーレベル８ｍＷの
間の変調で、高いパワーレベルで非晶質化マークを形成
し 低いパワーレベルで非晶質化マークを結晶化して消
去する同時消録の方法で行っ九 この結果 記録信号の
Ｃ／Ｎ比としては ５５ｄＢ以上が得られ 消去特性と
して、オーバライド消去率３０ｄＢ以上が得られた オ
ーバライドのサイクル特性については 特にピットエラ
ーレイトの特性を測定した結ｉ １００００００サイ
クル以上劣化が見られなかっ九
発明の効果
以上 説明したようにカルコゲン化合物からなる記録薄
膜層にＴｅ、Ｇｅ、Ｓｂの中の少なくとも一つ元素の窒
化物または酸化物を含ませることによって、記録・消去
の繰り返しに伴い発生する誘電体層の脈動によゑ 記録
薄膜材料の案内溝に沿っての移動を抑制することができ
、繰り返し特性を向上することができるものであも
また 記録薄膜と反射層の間の誘電体層を薄くした急冷
構成にすることによって、熱衝撃の低減による繰り返し
特性の向上 記録マークの均一化による消去特性の向上
をはかることができるものであもReference numeral 6 denotes a protective plate which is attached to the disk substrate 1 with an adhesive 7, but recording, erasing and reproduction are not possible in the configuration shown in Fig. 1.
The dielectric layer, the recording thin film layer, and the reflective layer can be formed by irradiating a laser beam whose intensity is modulated according to the information and detecting the reflected light from the direction of the dielectric layer.
- Vacuum deposition or sputtering is used in the film. At this time, the recording thin film layer 3 made of Te, Ge, and Sb is coated with T
By including a nitride or oxide of at least one element among e, Ge, and Sb, the phenomenon in which the recording thin film material moves along the guide groove due to the pulsation of the dielectric layer that accompanies repeated recording and erasing can be prevented. The first and second dielectric layers 2,
4) ZnS-3i02 mixed film has a ratio of 5)02 of 20m
ol%, but it is not limited to this. However, if the SiO2 ratio is 5m01% or less,
The effect obtained when SiO2 is mixed with ZnS, that is, the effect of reducing the crystal grain size, becomes smaller, and 5
'Omol! % or more, the properties of the SiO2 film will increase, or the ratio of absorbed SiO2 is 5 to 40 mo
It is appropriate to keep the film thickness in the range of 1%.9 Furthermore, the force that makes the film thickness of the second dielectric layer 4 as thin as about 20 nm (thereby, the reflective layer 5, which becomes a heat diffusion layer, and the recording thin film layer 3 are close to each other). Therefore, the heat of the recording thin film layer 3 during recording/erasing is rapidly transferred to the reflective layer 5, and the recording thin film layer 3
With the disk configuration of this example, the outer diameter is 130 mm and 1800 mm.
rpm rotation linear velocity 8 m/sec f l =3.4
Measure the override characteristics of a 3MHz signal and f 2 = 1.0MHz signal.9 Override is 1
Laser light with a diameter of about 1 μm is modulated between a high power level of 16 mW and a low power level of 8 mW using a laser beam of approximately 1 μm at 2 circle spots, forming an amorphous mark at a high power level and crystallizing the amorphous mark at a low power level. As a result, a C/N ratio of 55 dB or more was obtained for the recorded signal, and an override erasure rate of 30 dB or more was obtained for the erasing characteristics.As for the override cycle characteristics, especially the pit error rate. As a result, no deterioration was observed over 1,000,000 cycles.The effects of the present invention are as follows.As explained above, the recording thin film layer made of a chalcogen compound contains a nitride or oxide of at least one element among Te, Ge, and Sb. By including this material, it is possible to suppress the movement of the recording thin film material along the guide groove due to the pulsation of the dielectric layer that occurs with repeated recording and erasing, and it is possible to improve the repetition characteristics. However, by creating a rapid cooling structure with a thinner dielectric layer between the recording thin film and the reflective layer, it is possible to improve repeatability by reducing thermal shock and improve erasing characteristics by making recorded marks more uniform. Deamo
第１図は本発明の一実施例における光記録媒体の要部拡
大断面図であム
ト・・ディスク基板 ２・・・第一の誘電体層 ３・・
・記録薄膜層 ４・・・第二の誘電体＃ ５・・・反射
胤代理人の氏名 弁理士 粟野重孝 ほか１名第１図FIG. 1 is an enlarged cross-sectional view of essential parts of an optical recording medium according to an embodiment of the present invention.Disc substrate 2.First dielectric layer 3.
・Recording thin film layer 4...Second dielectric #5...Name of reflective agent Patent attorney Shigetaka Awano and one other person Figure 1
Claims (10)
て昇温、溶融し、急冷して非晶質化する性質と、非晶質
の状態を昇温することにより、結晶化する性質を有する
記録薄膜層を有した光記録媒体であって、その記録薄膜
層がカルコゲン化合物であり、記録薄膜層がＴｅ、Ｇｅ
、Ｓｂの中の少なくとも一つの元素の窒化物を含んでな
ることを特徴とする光記録媒体。(1) When irradiated with laser light, it absorbs the energy, heats up, melts, and rapidly cools to become amorphous. It also has the property of crystallizing an amorphous state by heating it. An optical recording medium having a recording thin film layer, wherein the recording thin film layer is made of a chalcogen compound, and the recording thin film layer is made of Te or Ge.
, Sb. , Sb.
徴とする請求項１記載の光記録媒体。(2) The optical recording medium according to claim 1, wherein the recording thin film layer is made of Te, Ge, and Sb.
光の照射により、そのエネルギーを吸収して昇温、溶融
し、急冷して非晶質化する性質と、非晶質の状態を昇温
することにより結晶化する性質を有する記録薄膜層と、
第二の誘電体層と、反射層とを順次形成した光記録媒体
であって、その記録薄膜層がカルコゲン化合物であり、
記録薄膜層がＴｅ、Ｇｅ、Ｓｂの中の少なくとも一つの
元素の窒化物を含んでなることを特徴とする光記録媒体
。(3) A first dielectric layer on one side of the transparent substrate, a property that absorbs the energy when irradiated with laser light, heats up, melts, and rapidly cools to become amorphous; a recording thin film layer having a property of crystallizing by increasing the temperature of the recording thin film layer;
An optical recording medium in which a second dielectric layer and a reflective layer are sequentially formed, the recording thin film layer being a chalcogen compound,
An optical recording medium characterized in that the recording thin film layer contains a nitride of at least one element among Te, Ge, and Sb.
し、第二の誘電体層の膜厚を３０ｎｍ以下にすることを
特徴とする請求項３記載の光記録媒体。(4) The optical recording medium according to claim 3, wherein the second dielectric layer is thinner than the first dielectric layer, and the second dielectric layer has a thickness of 30 nm or less. .
２の混合膜のＳｉＯ＿２比が５〜４０ｍｏｌ％の材料を
用いることを特徴とする請求項３記載の光記録媒体。(5) ZnS and SiO_ as the first and second dielectric layers
4. The optical recording medium according to claim 3, wherein a material having a SiO_2 ratio of 5 to 40 mol% is used for the mixed film.
て昇温、溶融し、急冷して非晶質化する性質と、非晶質
の状態を昇温することにより、結晶化する性質を有する
記録薄膜層を有した光記録媒体であって、その記録薄膜
層がカルコゲン化合物であり、記録薄膜層がＴｅ、Ｇｅ
、Ｓｂの中の少なくとも一つの元素の酸化物を含んでな
ることを特徴とする光記録媒体。(6) When irradiated with laser light, it has the property of absorbing the energy, heating up, melting, and rapidly cooling to become amorphous, and the property of crystallizing an amorphous state by heating it. An optical recording medium having a recording thin film layer, wherein the recording thin film layer is made of a chalcogen compound, and the recording thin film layer is made of Te or Ge.
, an oxide of at least one element among Sb.
徴とする請求項６記載の光記録媒体。(7) The optical recording medium according to claim 6, wherein the recording thin film layer is made of Te, Ge, and Sb.
光の照射により、そのエネルギーを吸収して昇温、溶融
し、急冷して非晶質化する性質と、非晶質の状態を昇温
することにより結晶化する性質を有する記録薄膜層と、
第二の誘電体層と、反射層とを順次形成した光記録媒体
であって、その記録薄膜層がカルコゲン化合物であり、
記録薄膜層がＴｅ、Ｇｅ、Ｓｂの中の少なくとも一つの
元素の酸化物を含んでなることを特徴とする光記録媒体
。(8) A first dielectric layer on one side of the transparent substrate, and a property that when irradiated with laser light, it absorbs the energy, heats up, melts, and rapidly cools to become amorphous. a recording thin film layer having a property of crystallizing by increasing the temperature of the recording thin film layer;
An optical recording medium in which a second dielectric layer and a reflective layer are sequentially formed, the recording thin film layer being a chalcogen compound,
An optical recording medium characterized in that the recording thin film layer contains an oxide of at least one element among Te, Ge, and Sb.
し、第二の誘電体層の膜厚を３０ｎｍ以下にすることを
特徴とする請求項８記載の光記録媒体。(9) The optical recording medium according to claim 8, wherein the second dielectric layer is thinner than the first dielectric layer, and the second dielectric layer has a thickness of 30 nm or less. .
＿２の混合膜のＳｉＯ＿２比が５〜４０ｍｏｌ％の材料
を用いることを特徴とする請求項８記載の光記録媒体。(10) ZnS and SiO as the first and second dielectric layers
9. The optical recording medium according to claim 8, wherein the mixed film of _2 uses a material having an SiO_2 ratio of 5 to 40 mol%.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2113383A JP2913759B2 (en) | 1990-04-27 | 1990-04-27 | Optical recording medium |
| US07/559,166 US5194363A (en) | 1990-04-27 | 1990-07-30 | Optical recording medium and production process for the medium |
| US07/573,246 US5230973A (en) | 1990-04-27 | 1990-08-24 | Method of recording and erasing information in an erasible optical recording medium |
| KR1019910006821A KR950006840B1 (en) | 1990-04-27 | 1991-04-27 | Optical recording medium & production process for the medium |
| US08/904,983 USRE36383E (en) | 1990-04-27 | 1997-08-01 | Optical recording medium and production process for the medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2113383A JP2913759B2 (en) | 1990-04-27 | 1990-04-27 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0411336A true JPH0411336A (en) | 1992-01-16 |
| JP2913759B2 JP2913759B2 (en) | 1999-06-28 |
Family
ID=14610913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2113383A Expired - Lifetime JP2913759B2 (en) | 1990-04-27 | 1990-04-27 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2913759B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948496A (en) * | 1996-09-06 | 1999-09-07 | Ricoh Company, Ltd. | Optical recording medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6358636A (en) * | 1986-08-29 | 1988-03-14 | Matsushita Electric Ind Co Ltd | Optical information recording medium |
| JPH0256746A (en) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | Information carrier disk |
| JPH02252577A (en) * | 1989-03-28 | 1990-10-11 | Ricoh Co Ltd | Information recording medium |
| JPH02258290A (en) * | 1988-10-28 | 1990-10-19 | Mitsui Petrochem Ind Ltd | Optical recording medium and manufacture thereof |
-
1990
- 1990-04-27 JP JP2113383A patent/JP2913759B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6358636A (en) * | 1986-08-29 | 1988-03-14 | Matsushita Electric Ind Co Ltd | Optical information recording medium |
| JPH0256746A (en) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | Information carrier disk |
| JPH02258290A (en) * | 1988-10-28 | 1990-10-19 | Mitsui Petrochem Ind Ltd | Optical recording medium and manufacture thereof |
| JPH02252577A (en) * | 1989-03-28 | 1990-10-11 | Ricoh Co Ltd | Information recording medium |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948496A (en) * | 1996-09-06 | 1999-09-07 | Ricoh Company, Ltd. | Optical recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2913759B2 (en) | 1999-06-28 |
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