JPH02258290A - Optical recording medium and manufacture thereof - Google Patents
Optical recording medium and manufacture thereofInfo
- Publication number
- JPH02258290A JPH02258290A JP1282637A JP28263789A JPH02258290A JP H02258290 A JPH02258290 A JP H02258290A JP 1282637 A JP1282637 A JP 1282637A JP 28263789 A JP28263789 A JP 28263789A JP H02258290 A JPH02258290 A JP H02258290A
- Authority
- JP
- Japan
- Prior art keywords
- recording film
- substrate
- film
- recording
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 17
- 238000005546 reactive sputtering Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 3
- 239000011147 inorganic material Substances 0.000 abstract description 3
- 239000011368 organic material Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract description 2
- 239000004926 polymethyl methacrylate Substances 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 9
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XBFJAVXCNXDMBH-UHFFFAOYSA-N tetracyclo[6.2.1.1(3,6).0(2,7)]dodec-4-ene Chemical compound C1C(C23)C=CC1C3C1CC2CC1 XBFJAVXCNXDMBH-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は、光あるいは熱等のエネルギービームの照射に
より基板上の記録膜における照射部に光学的特性の変化
を生じさせて情報を記録するようにした光記録媒体およ
びその製造方法に関する。[Detailed Description of the Invention] Technical Field of the Invention The present invention records information by causing a change in optical characteristics in an irradiated portion of a recording film on a substrate by irradiating an energy beam such as light or heat. This invention relates to an optical recording medium and its manufacturing method.
発明の技術的背景
光記録媒体には、エネルギービームの照射により、記録
膜の一部に穴もしくは四部等の物理的変化部(ピット)
を形成する方式のものと、記録膜の一部に相変化を生ぜ
しめて光学的特性(屈折率、反射率、透過率など)を変
化させた光学特性変化部を形成する方式のものとがある
。現在のところ、記録膜の一部に穴等の物理的変化部を
形成する方式(ピット形成方式)の光記録媒体が主流で
ある。Technical background of the invention Optical recording media have physical changes (pits) such as holes or four parts in a part of the recording film by irradiation with an energy beam.
There are two types of recording film, one that creates a phase change in a part of the recording film and forms an optical property change area that changes the optical properties (refractive index, reflectance, transmittance, etc.). . At present, optical recording media of a type (pit formation type) in which a physically changed part such as a hole is formed in a part of a recording film are mainstream.
しかしながら、ピット形成方式の光記録媒体にあっては
、■記録膜の一部にピットを形成するために比較的大き
な記録用出力を要し、■記録ピット形状の制御が困難で
あり、■高密度の記録が困難であり、■二枚の光記録媒
体を密むして貼り合せることができない等の不都合を有
する。これに対して、記録膜の一部に相変化を生ぜしめ
て光学特性変化部を形成する方式(相変化方式)の光記
録媒体にあっては、ピット形成方式の光記録媒体が有す
る不都合を回避することができる。However, pit-forming optical recording media: 1) requires a relatively large recording output to form pits in a part of the recording film, 2) has difficulty controlling the shape of the recording pits, and 2) has high performance. It is difficult to record the density, and it has disadvantages such as (1) it is not possible to closely peel two optical recording media and paste them together. On the other hand, optical recording media using a method (phase change method) in which a phase change is caused in a part of the recording film to form a portion with changed optical characteristics avoids the disadvantages of optical recording media using a pit formation method. can do.
相変化方式の光記録媒体としては、たとえばT e−G
e−3bから成る記録膜を有する光記録媒体(特開昭
62−198.181号公報)や、T e−S n−Z
n−8から成る記録膜を有する光記録媒体(特開昭6
2−167、fi32号公報)等の合金系記録膜を有す
る光記録媒体が知られている。しかしながら、このよう
な合金系の記録膜を有する光記録媒体にあっては、基板
上に合金系の記録膜を成膜する際に、合金組成の割合を
制御することが比較的困難であり再現性に乏しく、一定
の性能を有する光記録媒体を生産性良く製造することが
できないという不都合を有している。As a phase change type optical recording medium, for example, T e-G
Optical recording media having a recording film made of e-3b (Japanese Unexamined Patent Application Publication No. 1981/1981), T e-S n-Z
Optical recording medium having a recording film consisting of n-8 (Japanese Patent Application Laid-open No. 6
Optical recording media having an alloy-based recording film such as No. 2-167 and FI32 are known. However, in the case of optical recording media having such alloy-based recording films, it is relatively difficult to control the alloy composition ratio when forming the alloy-based recording film on the substrate, and it is difficult to reproduce. It has the disadvantage that optical recording media having a certain level of performance cannot be manufactured with high productivity.
また、同じ相変化方式の光記録媒体として、Tc Ox
系の記録膜を有する光記録媒体(特開昭50−46,3
17号公報)も知られているが、この光記録媒体にあっ
ては、■記録膜の結晶化温度が低いので非晶質安定性す
なわち寿命が短く、■その製造に際して酸素雰囲気下で
反応性スパッタリングを行うと、酸素が助燃性であるこ
とから、成膜時の安全を害する虞があるという不都合を
有する。In addition, as an optical recording medium using the same phase change method, Tc Ox
Optical recording medium having a recording film of the JP-A-50-46-3
No. 17) is also known, but in this optical recording medium, (1) the crystallization temperature of the recording film is low, so it is amorphous, that is, it has a short life; and (2) it is not reactive under an oxygen atmosphere during its manufacture. If sputtering is performed, there is a disadvantage that since oxygen is a combustion aid, there is a possibility that safety during film formation may be compromised.
本発明者等は、TOを主成分とする相変化方式の記録膜
を有する光記録媒体について鋭意検討したところ、Te
にNを含有させた記録膜を基板と保護膜との間に設ける
ことで、記録膜の非晶質安定性(非晶質状態を安定して
保持しiすること)が良くなると共に耐酸化性が向上し
、光記録媒体の長寿命化が図れ、しかもこの記録膜を所
定の膜厚範囲にすることで、情報読み出し誤差を少なく
できることを見出し、本発明を完成するに至った。The present inventors conducted intensive studies on optical recording media having a phase change type recording film containing TO as a main component, and found that Te
By providing a recording film containing N between the substrate and the protective film, the amorphous stability of the recording film (stably maintaining the amorphous state) and oxidation resistance are improved. The present inventors have discovered that the performance of the optical recording medium can be improved, the life of the optical recording medium can be extended, and, by making the recording film within a predetermined thickness range, errors in reading information can be reduced, and the present invention has been completed.
発明の目的
本発明は、このような新たな知見に基づきなされたもの
であり、記録膜の非晶質安定性を高めると共に耐酸化性
を向りさせ、光記録媒体の長寿命化を図り、しかも情報
読み出し誤差の少ない)日変化方式の光記録媒体を提供
することを目的としている。Purpose of the Invention The present invention has been made based on such new knowledge, and aims to increase the amorphous stability of the recording film and improve the oxidation resistance, thereby extending the life of the optical recording medium. Moreover, it is an object of the present invention to provide an optical recording medium of a diurnal variation type (with less error in reading information).
発明の概要
このような目的を達成するために、本発明に係る光記録
媒体は・、基板と、この基板上に形成された記録膜と、
この記録膜上に形成された保護膜とを有し、前記記録膜
にエネルギービームを照射することにより、この記録膜
における照射部に相変化を生じさせて光学特性変化部を
形成して情報を記録するようにした光記録媒体であって
、前記記録膜は、TOおよびNを含む薄膜であることを
特徴としている。Summary of the Invention In order to achieve the above object, an optical recording medium according to the present invention includes: a substrate; a recording film formed on the substrate;
A protective film is formed on the recording film, and by irradiating the recording film with an energy beam, a phase change is caused in the irradiated part of the recording film to form an optical property changing part and information is transmitted. The optical recording medium is characterized in that the recording film is a thin film containing TO and N.
また本発明に係る光記録媒体の製造方法は、基板と、こ
の基板上に形成されたTeおよびNを含む記録膜と、こ
の記録膜上に形成された保護膜とをHし、前記記録膜に
エネルギービームを照射することにより、この記録膜に
おける照射部に相変化を生じさせて光学特性変化部を形
成して情報を記録するようにした光記録媒体を製造する
方法であって、
前記記録膜を基板上に成膜するに際して、Tcをターゲ
ットとして、ArおよびN2ガスの雰囲気下で反応性ス
パッタリングを行い、
前記ArおよびN2ガス中のArとN2との流量比((
N2/(Ar+N2))を5〜50%とすることを特徴
としている。Further, in the method for manufacturing an optical recording medium according to the present invention, a substrate, a recording film containing Te and N formed on this substrate, and a protective film formed on this recording film are heated, and the recording film is heated. A method for manufacturing an optical recording medium in which information is recorded by irradiating an energy beam to cause a phase change in the irradiated portion of the recording film to form an optical property changing portion, the method comprising: When forming a film on a substrate, reactive sputtering is performed using Tc as a target in an atmosphere of Ar and N2 gas, and the flow rate ratio of Ar and N2 in the Ar and N2 gases ((
It is characterized in that N2/(Ar+N2)) is 5 to 50%.
このような本発明に係る光記録媒体およびその製造方法
によれば、Tcを主成分とする記録膜にNを含Hさせ、
この記録膜を基板と保護膜との間に積層させることで、
記録膜の非晶質安定性および耐酸化性が向上し、光記録
媒体の長寿命化が図れる。しかも記録膜の膜厚を所定の
値に設定することで、情報読み出し誤差を小さくするこ
とができる。According to the optical recording medium and the manufacturing method thereof according to the present invention, a recording film containing Tc as a main component contains N and H,
By laminating this recording film between the substrate and the protective film,
The amorphous stability and oxidation resistance of the recording film are improved, and the life of the optical recording medium can be extended. Moreover, by setting the thickness of the recording film to a predetermined value, the information read error can be reduced.
発明の詳細な説明
以下、本発明を図面に示す実施例に基づき詳細に説明す
る。DETAILED DESCRIPTION OF THE INVENTION Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第1図は本発明の一実施例に係る光記録媒体の概略断面
図である。FIG. 1 is a schematic cross-sectional view of an optical recording medium according to an embodiment of the present invention.
第1図に示すように、本発明に係る光記録媒体10は、
基板11と、この基板の表面に形成された記録膜12と
、この記録膜12の表面に形成された保護膜13とから
構成されている。As shown in FIG. 1, the optical recording medium 10 according to the present invention includes:
It consists of a substrate 11, a recording film 12 formed on the surface of this substrate, and a protective film 13 formed on the surface of this recording film 12.
基板11としては、たとえばガラスあるいはアルミニウ
ム等の無機材料の他に、ポリメチルメタクリレート、ポ
リカーボネート、ポリカーボネートとポリスチレンのポ
リマーアロイ、米国特許第4614778号明細書に示
されるような非晶質ポリオレフィン、ポリ4−メチル−
1−ペンテン、エポキシ樹脂、ポリエーテルサルフォン
、ポリサルフォン、ポリエーテルイミド、エチレン・テ
トラシクロドデセン共重合体等の有機材料を用いること
ができる。この基板11の厚みは、記録媒体10全体に
適度な剛性を付与するのに十分な厚さであれば良く、好
ましくは0.5〜2.5關、特に好ましくは1〜1.5
mm程度である。In addition to inorganic materials such as glass or aluminum, the substrate 11 may be made of polymethyl methacrylate, polycarbonate, a polymer alloy of polycarbonate and polystyrene, an amorphous polyolefin as shown in U.S. Pat. No. 4,614,778, or poly(4-4). Methyl-
Organic materials such as 1-pentene, epoxy resin, polyethersulfone, polysulfone, polyetherimide, and ethylene/tetracyclododecene copolymer can be used. The thickness of this substrate 11 may be sufficient as long as it provides appropriate rigidity to the entire recording medium 10, and is preferably about 0.5 to 2.5 mm, particularly preferably about 1 to 1.5 mm.
It is about mm.
本発明に係る記録膜12は、Tcを主成分としてNを少
なくとも含む薄膜であり、To以外の低融点元素、ない
しはその他の成分を含んでも良い。The recording film 12 according to the present invention is a thin film containing Tc as a main component and at least N, and may also contain low melting point elements other than To or other components.
記録膜の組成は(Te N )1−yMyで表−
x x
わされ、Xは0.1原子%≦X≦60原子%、好ましく
は0.3原子%≦X≦50原子%、特に好ましくは0.
5原子%≦X≦30原子%の範囲にあることが好ましい
。また、MはTI Mn。The composition of the recording film is (TeN)1-yMy.
x
It is preferable that the range is 5 atomic %≦X≦30 atomic %. Also, M is TI Mn.
NI Zr5NbSTe、Al5PtSSs。NI Zr5NbSTe, Al5PtSSs.
BI In、Se、Pb、Co、SI Pd。BI In, Se, Pb, Co, SI Pd.
Sn、Zn、Go、Sb等から選ばれる少なくとも1種
以上添加元素であり、yは0原子%≦y≦60原子%、
好ましくは0原子%≦y≦40原子%の範囲にあること
が好ましい。このような範囲でNを含ませることによっ
て、記録膜12の非晶質安定性および耐酸化性を向上さ
せることができるからである。At least one or more additive elements selected from Sn, Zn, Go, Sb, etc., y is 0 atomic %≦y≦60 atomic %,
Preferably, the range is 0 atomic %≦y≦40 atomic %. This is because by including N in such a range, the amorphous stability and oxidation resistance of the recording film 12 can be improved.
なお、記録膜12中に含まれる各元素の含有量は、本発
明においては金属元素(Teなど)についてはICP発
光分析法(誘導結合型プラズマ発光分析法)によって、
またNについてはESCA(X線光電子分光)によって
測定される。In the present invention, the content of each element contained in the recording film 12 is determined by ICP emission spectrometry (inductively coupled plasma emission spectrometry) for metal elements (such as Te).
Further, N is measured by ESCA (X-ray photoelectron spectroscopy).
このような記録膜12の膜厚は、100人〜1μm好ま
しくは300〜1500人さらに好ましくは700〜1
300人程度である。The thickness of such a recording film 12 is 100 to 1 μm, preferably 300 to 1,500, and more preferably 700 to 1 μm.
There are about 300 people.
このような記録膜12を、基板11の表面に成膜するに
は、たとえば次のようにして行なうことができる。In order to form such a recording film 12 on the surface of the substrate 11, it can be performed, for example, as follows.
まず、Toをターゲットとして、N2ガスとArガスと
の混合ガス中で、反応性スパッタリング法により、基板
11上に、Nを含むTe薄膜がら成る記録膜12を成膜
する。このような反応性スパッタリングに際して、N2
ガスとArガスとの流量比(N2/ (Ar +N2)
)をi′1llJ9IIすることにより、記録膜12中
に含まれるNの含有割合をi48することができる。N
2ガスとArガスとの流量比(N2/ (Ar +N2
)l は、5〜50%、好ましくは10〜30%である
。このような流量比でスパッタリングを行うことにより
、非晶質安定性が良く、耐酸化性が向上した記録膜12
を成膜性良く基板11上に得ることができる。また、ス
パッタリング法を用いることなく、ToとTe窒化物の
蒸気とをプラズマ状にして共蒸着法により基板に記録膜
12を成膜することも可能である。また、気相成長また
はプラズマ気相成長によっても、同様の記録膜12を形
成することが可能である。さらに他の方法としてTe、
N原子の一部または全部をイオン化してビーム状として
基板上に積もらせるようにしてもよい。First, using To as a target, a recording film 12 made of a Te thin film containing N is formed on a substrate 11 by reactive sputtering in a mixed gas of N2 gas and Ar gas. During such reactive sputtering, N2
Flow rate ratio of gas and Ar gas (N2/ (Ar +N2)
) by i′1llJ9II, the content ratio of N contained in the recording film 12 can be i48. N
2 gas and Ar gas flow rate ratio (N2/ (Ar +N2
)l is 5-50%, preferably 10-30%. By performing sputtering at such a flow rate ratio, a recording film 12 with good amorphous stability and improved oxidation resistance is produced.
can be obtained on the substrate 11 with good film formability. Furthermore, it is also possible to form the recording film 12 on the substrate by a co-evaporation method using vapors of To and Te nitride in the form of plasma, without using the sputtering method. Further, a similar recording film 12 can also be formed by vapor phase epitaxy or plasma vapor phase epitaxy. Furthermore, as another method, Te,
Part or all of the N atoms may be ionized and deposited on the substrate in the form of a beam.
このようにして成膜された記録膜12上には、保護膜1
3が形成される。保護M13は、記録膜12への記録時
に熱の逃げを防ぎ、記録感度を高めるために、低熱伝導
率(好ましくは、1.0W/cIII−60g以下)の
材質で構成されることが望ましい。たとえば、保護膜1
3は、紫外線硬化樹脂等の有機材料や、TI、AN、N
I Cr等の無機材料、あるいはこれらを組み合せた
材料で構成される。保護膜の膜厚は、50人〜1■■、
好ましくは100人〜0.11−である。A protective film 1 is formed on the recording film 12 formed in this manner.
3 is formed. The protection M13 is desirably made of a material with low thermal conductivity (preferably 1.0 W/cIII-60 g or less) in order to prevent heat from escaping during recording to the recording film 12 and increase recording sensitivity. For example, protective film 1
3 is organic material such as ultraviolet curing resin, TI, AN, N
It is composed of an inorganic material such as ICr, or a combination of these materials. The thickness of the protective film is 50 to 1■■,
Preferably it is 100 people to 0.11-.
このような保護113を記録膜12の表面に形成するに
は、前述した記録膜12の成膜方法と同様に、反応性ス
パッタリング法、気相成長法、プラズマ気相成長法、蒸
着法など、またはスピンコード法などの塗布によって行
なえばよい。In order to form such a protection 113 on the surface of the recording film 12, similar to the method for forming the recording film 12 described above, reactive sputtering method, vapor phase epitaxy method, plasma vapor phase epitaxy method, vapor deposition method, etc. Alternatively, it may be applied by coating using a spin code method or the like.
上記のような記録膜12に情報を書込むには、記録すべ
き情報に応じて変調(オン・オフ)されたレーザビーム
等のエネルギービームを、たとえば基板11側から記録
膜12に照射することにより、その照射部の記録膜12
の組成を、非晶質から結晶質へと相変化させ、当該照射
部に対応して光学特性変化部を形成することにより行う
。光学特性変化部とそうでない部分(光学特性非変化部
)とでは、再生用レーザビームを照射した場合の反射率
Rが相違しており、この反射率Rの差を利用して情報の
書き込みおよび読み出しが可能となっている。To write information on the recording film 12 as described above, an energy beam such as a laser beam that is modulated (on/off) depending on the information to be recorded is irradiated onto the recording film 12 from, for example, the substrate 11 side. Therefore, the recording film 12 of the irradiation part
This is carried out by changing the phase of the composition from amorphous to crystalline, and forming an optical property changing part corresponding to the irradiated part. The reflectance R when irradiated with the reproducing laser beam is different between the optical characteristic change part and the non-optical characteristic change part (optical characteristic non-change part), and this difference in reflectance R is used to write and write information. Reading is possible.
発明の効果
このような本発明に係る光記録媒体およびその製造方法
によれば、Toを主成分とする記録膜にNを自存させ、
この記録膜を基板と保護膜との間に積層させるようにし
ているので、記録膜の非晶質安定性および耐酸化性が向
上し、光記録媒体の長寿命化が図れる。しかも記録膜の
膜厚を所定の値に設定することで、情報読み出し誤差を
小さくすることができる。Effects of the Invention According to the optical recording medium and the manufacturing method thereof according to the present invention, N is allowed to exist naturally in a recording film mainly composed of To,
Since this recording film is laminated between the substrate and the protective film, the amorphous stability and oxidation resistance of the recording film are improved, and the life of the optical recording medium can be extended. Moreover, by setting the thickness of the recording film to a predetermined value, the information read error can be reduced.
[実施例]
以下、本発明をさらに具体的な実施例に基づき説明する
が、本発明はこれら実施例に限定されるものではない。[Examples] The present invention will be described below based on more specific examples, but the present invention is not limited to these examples.
実施例1
第1図に示す構造の光記録媒体10において、基板11
としてエチレン・テトラシクロドデセン共重合体(エチ
レン含量60モル%、テトラシクロドデセン含量40モ
ル%)からなる非晶質ポリオレフィン樹脂基板を用い
記録膜12としてTe N (スパッタ条件(N
2 / (A r +N、、、))−20(流量%))
を用いた場合の、記録膜の膜厚に対する基板側からの再
生光の反射率変化を第2図に示す。Example 1 In the optical recording medium 10 having the structure shown in FIG.
An amorphous polyolefin resin substrate made of ethylene/tetracyclododecene copolymer (ethylene content: 60 mol%, tetracyclododecene content: 40 mol%) was used as
The recording film 12 is made of TeN (sputtering conditions (N
2/(A r +N,,,))-20(Flow rate %))
FIG. 2 shows the change in the reflectance of the reproduction light from the substrate side with respect to the film thickness of the recording film when using the recording film.
これらの値は、ESCA(X−線ホトエレクトロンスペ
クトラム)モデル5SX−1(10(サーフエースサイ
エンスミL製)で測定された値である。測定条件は、
バックグランド圧:5X10 TorrX−線スポ
ットサイズ:0.6龍φ
アディションインテグレートヨン=6回励起源: AI
K (1487eV)α −「ay
であった。These values are values measured with ESCA (X-ray photoelectron spectrum) model 5SX-1 (10 (manufactured by Surf Ace Science Mi L).The measurement conditions are: Background pressure: 5X10 TorrX-ray spot size : 0.6 Dragon φ Addition Integration = 6 times Excitation source: AI
K (1487 eV) α - 'ay.
再生光の波長λ−830nmであり、光記録媒体は空気
中に設置されていると仮定して計算を行なった。Calculations were performed assuming that the wavelength of the reproduction light was λ-830 nm and that the optical recording medium was placed in the air.
図中、Rは記録光照射前の光記録媒体の記録層の膜厚に
対する反射率変化、Roは照射後の反射率変化を示す。In the figure, R indicates the reflectance change with respect to the film thickness of the recording layer of the optical recording medium before recording light irradiation, and Ro indicates the reflectance change after irradiation.
この条件では、記録層の膜厚を750〜950人の範囲
にすれば、反射率差ΔR(−R−R’ )が大きくなり
、情報の読み出し誤差が少なくなるであろうことが確認
された。Under these conditions, it was confirmed that if the thickness of the recording layer was set in the range of 750 to 950 layers, the reflectance difference ΔR (-R-R') would increase and the error in reading information would decrease. .
実施例2
スパッタ条件をI N 2 / (A r + N 2
) ) −40(流m%)に変化させた以外は、実施
例1と同じ条件で反射率変化を求めた図を第3図に示す
。Example 2 Sputtering conditions were set to I N 2 / (A r + N 2
) ) FIG. 3 shows the reflectance changes obtained under the same conditions as in Example 1, except that the change was changed to −40 (flow m%).
この場合、記録膜の膜厚を950〜1300人の範囲に
すれば、情報の読み出し誤差は少なくなるであろうこと
が確認された。In this case, it was confirmed that if the thickness of the recording film was set in the range of 950 to 1300, the error in reading information would be reduced.
実施例3
実際に、基板11として、実施例1と同様な非晶質ポリ
オレフィン樹脂からなるディスク基板を用い、この上に
スパッタ条件IN2/(Ar+N2))−20(流量%
)の反応性スパッタによりTo85N15層(膜厚90
0人)を記録膜12として成膜し、さらに保護M413
として、紫外線硬化樹脂をスピンコード法により成膜し
て光記録媒体を作成した。Example 3 Actually, a disk substrate made of amorphous polyolefin resin similar to that in Example 1 was used as the substrate 11, and sputtering conditions IN2/(Ar+N2))-20 (flow rate %) were applied on this disk substrate.
) reactive sputtering to form a To85N15 layer (thickness 90
0 person) as the recording film 12, and further protect M413.
An optical recording medium was created by depositing an ultraviolet curable resin into a film using a spin code method.
この光記録媒体のC/N比をディスク回転数1.800
rp−・評価位置が半径50龍・記録周波数IMHz
−duty−50%の条件下で測定したところ、40d
B以上のC/N比が得られることを確認した。The C/N ratio of this optical recording medium is set at a disk rotation speed of 1.800.
rp-・Evaluation position is radius 50・Recording frequency IMHz
-When measured under the condition of -duty-50%, 40d
It was confirmed that a C/N ratio of B or higher was obtained.
比較例1
スパッタ条件をAr−100流量%に変化させた以外は
、実施例3と同じ条件で光記録媒体を作成した。Comparative Example 1 An optical recording medium was produced under the same conditions as in Example 3, except that the sputtering conditions were changed to Ar-100 flow rate %.
この光記録媒体のC/N比を実施例3と同様にして測定
したところ、最大13dBのC/N比しか得られなかっ
た。これは、To単独の記録膜の場合、記録膜を成膜直
後、記録膜がすでに一部結晶化しているために、レーザ
ビーム照射部と非照射部との光学的特性の変化が小さい
ためである。When the C/N ratio of this optical recording medium was measured in the same manner as in Example 3, a maximum C/N ratio of only 13 dB was obtained. This is because in the case of a recording film made of To alone, the recording film is already partially crystallized immediately after being deposited, so the change in optical properties between the laser beam irradiated area and the non-irradiated area is small. be.
第1図は本発明の一実施例に係る光記録媒体の断面図、
第2,3図は本発明の作用を示す記録膜の膜厚に対する
反射率変化のグラフである。
10・・・光記録媒体
12・・・記録膜FIG. 1 is a cross-sectional view of an optical recording medium according to an embodiment of the present invention;
FIGS. 2 and 3 are graphs of changes in reflectance with respect to the thickness of the recording film, showing the effects of the present invention. 10... Optical recording medium 12... Recording film
Claims (1)
録膜上に形成された保護膜とを有し、前記記録膜にエネ
ルギービームを照射することにより、この記録膜におけ
る照射部に光学的特性の変化を生じさせて情報を記録す
るようにした光記録媒体であって、 前記記録膜は、TeおよびNを含む薄膜であることを特
徴とする光記録媒体。 2)記録膜中に含まれるNの含有量が、記録膜中に含ま
れる全原子数に対して0.1〜60原子%である請求項
第1項に記載の光記録媒体。 3)基板と、この基板上に形成されたTeおよびNを含
む記録膜と、この記録膜上に形成された保護膜とを有し
、前記記録膜にエネルギービームを照射することにより
、この記録膜における照射部に光学的特性の変化を生じ
させて情報を記録するようにした光記録媒体を製造する
方法であって、前記記録膜を基板上に成膜するに際して
、Teをターゲットとして、ArおよびN_2ガスの雰
囲気下で反応性スパッタリングを行い、 前記ArおよびN_2ガス中のArとN_2との流量比
{(N_2/(Ar+N_2)}を5〜50%とするこ
とを特徴とする光記録媒体の製造方法。 4)前記{(N_2/(Ar+N_2)}が10〜30
%である請求項第3項に記載の方法。[Scope of Claims] 1) A substrate, a recording film formed on the substrate, and a protective film formed on the recording film, and the recording film is irradiated with an energy beam. An optical recording medium in which information is recorded by causing a change in optical characteristics in an irradiated portion of a recording film, wherein the recording film is a thin film containing Te and N. . 2) The optical recording medium according to claim 1, wherein the content of N contained in the recording film is 0.1 to 60 at % based on the total number of atoms contained in the recording film. 3) It has a substrate, a recording film containing Te and N formed on this substrate, and a protective film formed on this recording film, and this recording is performed by irradiating the recording film with an energy beam. A method for manufacturing an optical recording medium in which information is recorded by causing a change in optical properties in an irradiated part of the film, the recording film being formed on a substrate using Ar as a target. and reactive sputtering in an atmosphere of N_2 gas, and the flow rate ratio of Ar and N_2 in the Ar and N_2 gases {(N_2/(Ar+N_2)}) is 5 to 50%. 4) The above {(N_2/(Ar+N_2)} is 10 to 30
%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1282637A JPH02258290A (en) | 1988-10-28 | 1989-10-30 | Optical recording medium and manufacture thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-272695 | 1988-10-28 | ||
JP27269588 | 1988-10-28 | ||
JP1282637A JPH02258290A (en) | 1988-10-28 | 1989-10-30 | Optical recording medium and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02258290A true JPH02258290A (en) | 1990-10-19 |
Family
ID=26550335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1282637A Pending JPH02258290A (en) | 1988-10-28 | 1989-10-30 | Optical recording medium and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02258290A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0411336A (en) * | 1990-04-27 | 1992-01-16 | Matsushita Electric Ind Co Ltd | Optical recording medium |
-
1989
- 1989-10-30 JP JP1282637A patent/JPH02258290A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0411336A (en) * | 1990-04-27 | 1992-01-16 | Matsushita Electric Ind Co Ltd | Optical recording medium |
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