JPH04119885A - Optical recording medium and preparation thereof - Google Patents
Optical recording medium and preparation thereofInfo
- Publication number
- JPH04119885A JPH04119885A JP2242111A JP24211190A JPH04119885A JP H04119885 A JPH04119885 A JP H04119885A JP 2242111 A JP2242111 A JP 2242111A JP 24211190 A JP24211190 A JP 24211190A JP H04119885 A JPH04119885 A JP H04119885A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording medium
- dielectric layer
- optical recording
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910005936 Ge—Sb Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 45
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 229920000515 polycarbonate Polymers 0.000 abstract description 2
- 239000004417 polycarbonate Substances 0.000 abstract description 2
- 239000011241 protective layer Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 230000008929 regeneration Effects 0.000 abstract 1
- 238000011069 regeneration method Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 11
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 238000005280 amorphization Methods 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910017000 As2Se3 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はレーザービーム等により、情報を高密嵐 大容
量で記録再生及び消去できる光記録媒体に関するもので
あム
従来の技術
光デイスクメモリに関してＣＬ ＴｅとＴｅ０ｅを主
成分とするＴｅ０ｘ（０＜ １＜ ２．０）薄膜を用い
た追記型のディスクがあム また繰り返し記録・消去が
可能な消去ディスクが実用化されつつあも この消去デ
ィスクはレーザ光により記録薄膜を加熱し 溶融し 急
冷することにより、非晶質化して情報を記録し またこ
れを加熱し徐冷することにより結晶化して消去すること
ができるものである力（この記録薄膜の材料としてはＳ
、Ｒ，０ｖｓｈｉｎｓｋｙ （ニス・アール・オプシン
スキー）氏等のカルコゲン材料Ｇｅ１５Ｔｅ８１Ｓｂ２
Ｓ２等が知られていへ ま？Ｑ Ａ ｓ ２ Ｓ ３
やＡｓ２Ｓｅ３あるいは５ｂ２Ｓｅ＊等カルコゲン元素
と周期律表第■族あるいはＧｅ等の第■族元素等の組み
合せからなる薄膜等が広く知られていも これらの記録
薄膜をレーザ光ガイド用の溝を設けた基板に形成し 光
ディスクとして用いることができも これらのディスク
にレーザ光で情報を記録し その情報を消去する方法と
して（よ あらかじめ記録薄膜を結晶化させておき、こ
れに約１μ創こ絞ったレーザ光を情報に対応させて強度
変調を施し 例えば円盤状の記録ディスクを回転せしめ
て照射した場合、このピークパワーレーザ光照射部位１
上 記録薄膜の融点以上に昇温し かつ急冷し 非晶質
化したマークとして情報の記録がおこなえも またこの
変調バイアスパワーレーザ光照射部位（友 記録薄膜の
結晶化温度以上に昇温し 既記緑信号情報を消去する働
きがありオーバライドできも このように記録薄膜はレ
ーザ光によって融点以上に昇温上 また結晶化温度以上
に昇温されるものである。このため記録薄膜の下面およ
び上面に 耐熱性のすぐれた誘電体層を基板および接着
層に対する保護層として設けているのが一般的である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical recording medium on which information can be recorded, reproduced and erased at high density and large capacity using a laser beam or the like. A write-once disk using a Te0x (0 < 1 < 2.0) thin film whose main component is Te0e is now available.Also, erasing disks that can repeatedly record and erase are being put into practical use. By heating the recording thin film, melting it, and rapidly cooling it, it becomes amorphous and records information, and by heating and slowly cooling it, it crystallizes and erases information (the material of this recording thin film). As for S
, R,0vshinsky (Nis R Opshinsky) et al.'s chalcogen material Ge15Te81Sb2
Is S2 etc. known? Q A s 2 S 3
Although thin films made of a combination of a chalcogen element such as , As2Se3, or 5b2Se* and a group Ⅰ element of the periodic table or a group Ⅰ element such as Ge are widely known, these recording thin films are provided with grooves for guiding laser light. It can be formed on a substrate and used as an optical disk. However, as a method of recording information on these disks with a laser beam and erasing that information, a recording thin film is crystallized in advance, and a laser beam with a diameter of about 1 μm is focused on it. For example, if the light is intensity-modulated in accordance with information and is irradiated by rotating a disk-shaped recording disk, this peak power laser beam irradiation area 1
Information can be recorded as marks that become amorphous by being heated above the melting point of the recording thin film and rapidly cooled. The recording thin film has the function of erasing the green signal information and can be overridden.In this way, the temperature of the recording thin film is raised by the laser beam above the melting point and above the crystallization temperature.For this reason, the lower and upper surfaces of the recording thin film Generally, a dielectric layer with excellent heat resistance is provided as a protective layer for the substrate and adhesive layer.
これらの誘電体層の熱伝導特性により、昇温および急冷
徐冷の特性が変わるものであるかぺ 誘電体層の材質
あるいは層構成を選ぶことによって記録および消去の特
性を決めることができるものであも
発明が解決しようとする課題
記録薄膜を加熱昇温し 溶融急冷非晶質化および加熱昇
温結晶化の手段を用いる情報記録および消去可能なオー
バライド記録媒体における課題法記録・消去の繰り返し
特性と消去特性であム 記録・消去の繰り返し特性につ
いて（戴 記録・消去の加軌 冷却の多数回の繰り返し
によるディスク基板あるいは誘電体層の熱的な損傷によ
るノイズの増太 また損傷は無くて仮 記録・消去の繰
り返しに伴う加へ 冷却の繰り返しによる誘電体層の脈
動によって、記録薄膜材料がディスク回転方向の案内溝
に沿って移動する啄 記録・消去の繰り返し特性の劣化
が課題であっ九 消去特性についてはＴｅを含む非晶質
膜は その融点は代表的なもので４００℃〜９００℃と
広い温度範囲にあも これらの記録薄膜にレーザ光を照
射し 昇温徐冷することにより結晶化が行えも この温
度は一般的に融点より低い結晶化温度領域であム また
この結晶化した膜に高いパワーレベルのレーザ光をあて
、その融点以上に加熱するとその部分は溶融し急冷し
再び非晶質化してマークが形成できも 記録マークとし
て非晶質化を選ぶと、このマークは記録薄膜が溶融し急
冷されて形成されるものであるか収 冷却速度が速いほ
ど非晶質状態の均一なものが得られ慣号振輻が向上すも
冷却速度が遅い場合はマークの中心と周辺で非晶質化
の程度に差が発生ず４ 次に結晶化消去に際しては レ
ーザ光の照射により既に記録が行われている非晶質マー
ク部を、結晶化温度以上に昇温し結晶化させてこのマー
クを消去する。この消去の時、マークの非晶質状態が均
一な場合は均一に結晶化されやすくなり消去特性が向上
する力丈 記録マークの非晶質状態が不均一な場合（よ
結晶化消去の状態が不均一となって消去特性が低下す
るという課題があった 本発明の目的は記録消去特性に
優れ 記録・消去の繰り返し特性の安定な光ディスクを
提供することである。The thermal conductivity characteristics of these dielectric layers change the characteristics of heating, rapid cooling, and slow cooling.The recording and erasing characteristics can be determined by selecting the material or layer configuration of the dielectric layer. Problems to be Solved by the Amo Invention: Characteristics of repetitive recording and erasing in an information recording and erasable override recording medium using means of heating a recording thin film, melting and quenching it into amorphous form, and heating and temperature-raising crystallization. Regarding the repeatability of recording and erasing (additional track of recording and erasing) Increase in noise due to thermal damage to the disk substrate or dielectric layer due to repeated cooling, and assuming that there is no damage. The problem is that the recording thin film material moves along the guide groove in the disk rotation direction due to the pulsation of the dielectric layer due to repeated cooling.The problem is deterioration of the characteristics of repeated recording and erasing. Regarding the characteristics, amorphous films containing Te have a typical melting point in a wide temperature range of 400°C to 900°C.These recording thin films are crystallized by irradiating laser light and gradually increasing the temperature. However, this temperature is generally in the crystallization temperature range lower than the melting point.Also, if this crystallized film is heated above the melting point by shining a high-power laser beam on it, that part will melt and cool rapidly.
Even if a mark can be formed by becoming amorphous again, if amorphization is selected as the recording mark, the mark is formed by melting the recording thin film and rapidly cooling it.The faster the cooling rate, the more amorphous the state. However, if the cooling rate is slow, there will be no difference in the degree of amorphization between the center and the periphery of the mark.4 Next, when erasing crystallization, laser light irradiation is required. The amorphous mark portion, on which recording has already been performed, is heated to a temperature higher than the crystallization temperature to crystallize and erase this mark. During this erasing, if the mark is in a uniform amorphous state, it will be more likely to be uniformly crystallized and the erasing characteristics will be improved. There has been a problem that the erasing characteristics deteriorate due to non-uniformity.An object of the present invention is to provide an optical disc with excellent recording and erasing characteristics and stable repeating recording and erasing characteristics.
課題を解決するための手段
本発明は透明基板の一方の面に第１の誘電体層レーザ光
の照射により、そのエネルギーを吸収して昇温 溶融し
急冷して非晶質化する性質と、非晶質の状態を昇温す
ることにより結晶化する性質を有するＴｅ、 Ｇｅ、
Ｓｂからなる記録膜と第２の誘電体層と反射層とを順次
形成した光記録媒体であって前記Ｔｅ、 Ｇｅ、 Ｓｂ
からなる記録膜に酸素を、含ませるものであム
作用
すなわちにＴｅ、 Ｇｅ、 Ｓｂからなる記録膜に酸素
を含ませることにより配線 再生、消去の繰り返しに伴
う加も 冷却の繰り返しにより記録膜材料が脈動して案
内溝に沿って移動する現象を抑制することができも こ
れによって記録・消去の繰り返し特性を向上することが
できるものである。また透明基板の一方の面に第１の誘
電体層と、記録薄膜層と、第２の誘電体層と、反射層と
を順次形成し第２の誘電体層の膜厚を第１の誘電体層の
膜厚より薄くすることによって、熱拡散層である反射層
と記録薄膜層を近づけることになり、記録薄膜層が急冷
されるものであるから記録マークが均一な非晶質状態と
なって、記録マークが不均一な場合に生じる結晶化消去
時の不均一な状態の発生を防止することができ、消去特
性を向上させることが出来るものであム
実施例
以下、本発明の一実施例を図面に基づいて説明すも 図
において、 １はディスク基板でポリカーボネイト等の
樹脂基板からなっていも このディスク基板１はあらか
じめレーザ光案内用の溝を形成した樹脂基板あるいは２
Ｐ法で溝を形成したガラス板、ガラス板に直接溝を形成
した基板であってもよｌ、％ ２．４は第１、第２の
誘電体層でＺｎＺｎＳ５ｉの混合材料からなりＺｎＳ−
８ｉＯ２の組成比は５ｉ（ｈの含有量が２０ｍｏｌ％で
あり、膜厚は第１の誘電体層が約１５０ｎｍ、第２の誘
電体層の膜厚は約２０ｎｍであム３はＴｅ、Ｇｅ、Ｓｂ
からなる材料に酸素を含ませた記録膜で、膜厚は約２０
ｎｍであム ５はＡ１合金からなる反射層で膜厚は約１
２０ｎｍであも ６は保護板で接着剤７によってディス
ク基板１に貼り合わせていもここで６は保護板に限定す
るものでなく、もう−方の４層の膜の付いたディスクで
あってもよＩ、〜第１図の構成において記録・消去及び
再生は矢印８の方向より、情報に応じて強度変調を施し
たレーザ光を照射して、また反射光を検出して行うもの
であ４ この誘電体層 記録薄膜層 反射層の形成方法
として（よ −船釣には真空蒸着あるいはスパッタ法が
用いられ４ 本実施例では記録膜の形成方法としてアル
ゴンガスと酸素の混合ガスを用いたスパッタ法を用いて
いも この隊 酸素分圧が特性あるいは膜質を決定する
上で重要であム記録膜の場合スパッタ時の酸素分圧は５
Ｘ １０−’〜Ｉ Ｘ １０−４Ｔｏｒｒの範囲が適
当であム この理由は酸素分圧を５ Ｘ １０−４Ｔｏ
ｒｒよりも小さくするとＴｅ、Ｇｅ。Means for Solving the Problems The present invention is characterized in that a first dielectric layer absorbs the energy of one surface of a transparent substrate by irradiating it with laser light, heats up, melts, and rapidly cools to become amorphous. Te, Ge, which has the property of crystallizing by heating an amorphous state,
An optical recording medium in which a recording film made of Sb, a second dielectric layer, and a reflective layer are sequentially formed, wherein the Te, Ge, Sb
By adding oxygen to the recording film made of Te, Ge, and Sb, the recording film material becomes thinner due to the addition of wiring due to repeated reproduction and erasing and repeated cooling. It is possible to suppress the phenomenon of pulsating and moving along the guide groove, and as a result, the repeatability of recording and erasing can be improved. Further, a first dielectric layer, a recording thin film layer, a second dielectric layer, and a reflective layer are sequentially formed on one surface of the transparent substrate, and the film thickness of the second dielectric layer is set to be the same as that of the first dielectric layer. By making the film thinner than the body layer, the reflective layer, which is a heat diffusion layer, and the recording thin film layer are brought closer together, and since the recording thin film layer is rapidly cooled, the recording mark becomes a uniform amorphous state. Therefore, it is possible to prevent the occurrence of an uneven state during crystallization erasing that occurs when recorded marks are uneven, and it is possible to improve the erasing characteristics. An example will be explained based on a drawing. In the figure, 1 is a disk substrate made of a resin substrate such as polycarbonate. This disk substrate 1 is a resin substrate with grooves for guiding laser light formed in advance or 2.
It may be a glass plate with grooves formed by the P method or a substrate with grooves formed directly on the glass plate. % 2.4 is the first and second dielectric layer, which is made of a mixed material of ZnZnS5i and ZnS-
The composition ratio of 8iO2 is 5i (h content is 20 mol%, the first dielectric layer has a film thickness of about 150 nm, the second dielectric layer has a film thickness of about 20 nm, and 3 is Te, Ge. , Sb
A recording film made of a material containing oxygen, and the film thickness is approximately 20 mm.
5 is a reflective layer made of A1 alloy with a thickness of approximately 1 nm.
Even if it is 20 nm, 6 is a protective plate that is bonded to the disk substrate 1 with adhesive 7, but 6 is not limited to the protective plate here, and even if it is a disk with the other four layers of film. In the configuration shown in Figure 1, recording, erasing, and reproducing are performed by irradiating laser light whose intensity is modulated according to the information in the direction of arrow 8, and by detecting the reflected light. Vacuum evaporation or sputtering is used as a method for forming the dielectric layer, recording thin film layer, and reflective layer. Even when using this method, the oxygen partial pressure is important in determining the characteristics and film quality.In the case of recording films, the oxygen partial pressure during sputtering is 5.
The range of X 10-' to I X 10-4Torr is appropriate.The reason for this is that the oxygen partial pressure
If it is smaller than rr, Te, Ge.
ｓｂからなる記録膜に含まれる酸素が少なくなり、記録
膜３の材料が脈動して案内溝に沿って移動する現象を抑
制する効果が小さくなム 逆に１×１０− ４Ｔｏｒｒ
よりも酸素分圧を大きくすると記録膜の屈折率暮 光学
的な特性の変化 あるいは結晶化速度、非晶質化マーク
記録消去にかかわる基本的な特性が変化してしまう。Oxygen contained in the recording film made of sb decreases, and the effect of suppressing the phenomenon in which the material of the recording film 3 pulsates and moves along the guide groove becomes small.
If the oxygen partial pressure is increased, the basic characteristics related to the recording film's refractive index, optical characteristics, crystallization rate, amorphous marks, and erasing of records will change.
したがって酸素分圧は５ ｘ １０−’ 〜１ ｘ １
０−４Ｔｏｒｒの範囲が適当であム 第１、第２の誘電
体層２、４のＺＴＩＳ−３ｉＣｈ混合膜は５ｉ０２の比
率を２０ｍｏｌ％にしているがこれに限定するものでは
なｕ％ しかしながら５ｉＯ１の比率を５ｍｏｌ％以
下にすると、ＺｎＳに５ｉｆｔを混合した時に得られる
効果 すなわち結晶粒径を小さくするという効果が小さ
くなり、５０ｍｏｌ％以上にすると、ＳｉＯ２膜の性質
が大きくなるものであるか５ ５ｉｄ２の比率は５〜４
０ｍｏｌ％の範囲にするのが適当であっ丸 さらに第２
の誘電体層４の膜厚を約２０ｎｍと薄くしている力（こ
れによって熱拡散層となる反射層５と記録薄膜層３が近
くなり、記録・消去時の記録薄膜層３の熱が急速に反射
層５に伝達されることになって、記録薄膜層３を急冷す
る上で効果があるものであム 本実施例のディスク構成
で、外径１３０ｍ＆１８００ｒｐｍ回Ｌ 線速度８ ｍ
／ｓｅｃで、ｆｌ−３，４３ＭＨｚの信号ｆ２−１ 、
２５ＭＨｚの信号のオーバーライド特性を測定した オ
ーバーライドζ戴 １個のサークルスポットで約１μｍ
のレーザ光により、高いパワーレベル１ロｍＷ、低いパ
ワーレベル８ｍＷの間の変調で、高いパワーレベルで非
晶質化マークを形成し 低いパワーレベルで非晶質化
マークを結晶化して消去する同時消録の方法で行っな
この結果 記録信号のＣ／Ｎ比として４；Ｌ ５５ｄ
Ｂ以上が得られ 消去特性として、オーバーライド消去
率３０ｄＢ以上が得られた オーバーライドのサイクル
特性についてζ戴特にピットエラーレイトの特性を測定
した結果１００００００サイクル以上劣化が見られなか
った発明の詳細
な説明したようｇ：＝ Ｔｅ、Ｇｅ５Ｓｂからなる記
録膜に酸素を含ませることにより、記録消去の繰り返し
に伴い記録膜材料が案内溝に沿って移動する現象を阻止
することができも これによって記録消去の繰り返し特
性を向上することが出来も また記録薄膜と反射層の間
の誘電体層を薄くした急冷構成にすることによって、熱
衝撃の低減による繰り返し特性の向上 記録マークの均
一化による消去特性の向上をはかることができるもので
あムTherefore, the oxygen partial pressure is 5 x 10-' ~ 1 x 1
The ZTIS-3iCh mixed film of the first and second dielectric layers 2 and 4 has a 5iO2 ratio of 20 mol%, but the ratio is not limited to this.However, the ratio of 5iO1 If the ratio of 5ift is less than 5 mol%, the effect obtained when 5ift is mixed with ZnS, that is, the effect of reducing the crystal grain size, will be reduced, and if the ratio is 50 mol% or more, the properties of the SiO2 film will be increased. The ratio of 5id2 is 5-4
It is appropriate to set it in the range of 0 mol%.
The force that reduces the film thickness of the dielectric layer 4 to about 20 nm (this brings the reflective layer 5, which serves as a heat diffusion layer, closer to the recording thin film layer 3, so that the heat of the recording thin film layer 3 during recording and erasing is rapidly absorbed. This is effective in rapidly cooling the recording thin film layer 3. With the disc configuration of this embodiment, the outer diameter is 130 m, the rotation speed is 1800 rpm, and the linear velocity is 8 m.
/sec, fl-3, 43MHz signal f2-1,
We measured the override characteristics of a 25MHz signal Override ζDai Approximately 1μm for one circle spot
The laser beam is modulated between a high power level of 1 mW and a low power level of 8 mW, forming an amorphous mark at a high power level, and crystallizing and erasing the amorphous mark at a low power level. Do it by erasure method.
As a result, the C/N ratio of the recording signal is 4; L 55d
An override erasure rate of 30 dB or more was obtained as the erasing characteristics.As for the override cycle characteristics, we measured the characteristics of the pit error rate in particular, and as a result, no deterioration was observed over 1,000,000 cycles.A detailed explanation of the invention was provided. By impregnating oxygen into the recording film made of Te, Ge5Sb, it is possible to prevent the recording film material from moving along the guide grooves as recording and erasing is repeated. In addition, by using a rapid cooling structure with a thin dielectric layer between the recording thin film and the reflective layer, it is possible to improve repeatability by reducing thermal shock, and improve erasing characteristics by making recorded marks uniform. It is something that can be measured.
第１図は本発明の一実施例における光記録媒体の一部省
略断面図である
１・・・・ディスク基板、 ２・・・・第１の誘電体層
３・・・・記録薄膜凰 ４・・・・第２の誘電体層 ５
・・・・反射層FIG. 1 is a partially omitted sectional view of an optical recording medium according to an embodiment of the present invention. 1. Disk substrate 2. First dielectric layer 3 Recording thin film 4 ...Second dielectric layer 5
・・・Reflection layer
Claims (1)
て昇温、溶融し、急冷して非晶質化する性質と非晶質の
状態を昇温することにより結晶化する性質を有する記録
薄膜を有した光記録媒体であって、前記録薄膜に酸素を
含ませてなることを特徴とする光記録媒体。（２）記録
薄膜としてＴｅ、Ｇｅ、Ｓｂからなる材料を用いること
を特徴とする請求項１記載の光記録媒体。 （３）Ｔｅ−Ｇｅ−Ｓｂからなる記録膜材料に酸素を含
ませてなる記録膜を、アルゴンと酸素の混合ガスを用い
たスパッタ法で形成することを特徴とする光記録媒体の
製造方法。（４）Ｔｅ、Ｇｅ、Ｓｂからなる記録薄膜を
形成する時の酸素分圧を５×１０＾−＾５〜１×１０＾
−＾４Ｔｏｒｒの範囲にすることを特徴とする請求項３
記載の光記録媒体の製造方法。 （５）透明基板の一方の面に第１の誘電体層、記録膜、
第２の誘電体層、反射層を順次形成した光記録媒体であ
って、前記Ｔｅ、Ｇｅ、Ｓｂからなる記録薄膜に酸素を
含ませてなることを特徴とする光記録媒体。 （６）透明基板上に第１の誘電体層、記録薄膜、第２の
誘電体層、反射層を備え、第２の誘電体層を第１の誘電
体層よりも薄くし、第２の誘電体層の膜厚を３０ｎｍ以
下にした請求項５記載の光記録媒体。 （７）第１、第２の誘電体層の材料をＺｎＳ−ＳｉＯ＿
２の混合体とし、ＳｉＯ＿２比が５〜４０ｍｏｌ％とし
た請求項５記載の光記録媒体。[Claims] (1) When irradiated with laser light, the energy is absorbed, the temperature rises, melts, and then rapidly cools to become amorphous, and the amorphous state becomes crystallized by heating. What is claimed is: 1. An optical recording medium having a recording thin film having the property of: 1. An optical recording medium characterized in that the recording thin film contains oxygen. (2) The optical recording medium according to claim 1, wherein a material consisting of Te, Ge, and Sb is used as the recording thin film. (3) A method for manufacturing an optical recording medium, characterized in that a recording film made of a recording film material made of Te-Ge-Sb containing oxygen is formed by a sputtering method using a mixed gas of argon and oxygen. (4) Oxygen partial pressure when forming a recording thin film made of Te, Ge, and Sb is 5×10^-^5 to 1×10^
Claim 3 characterized in that the range is -^4 Torr.
A method of manufacturing the optical recording medium described above. (5) a first dielectric layer, a recording film on one side of the transparent substrate;
1. An optical recording medium in which a second dielectric layer and a reflective layer are sequentially formed, the optical recording medium being characterized in that the recording thin film made of Te, Ge, and Sb contains oxygen. (6) A first dielectric layer, a recording thin film, a second dielectric layer, and a reflective layer are provided on a transparent substrate, the second dielectric layer is made thinner than the first dielectric layer, and the second dielectric layer is made thinner than the first dielectric layer. 6. The optical recording medium according to claim 5, wherein the dielectric layer has a thickness of 30 nm or less. (7) The material of the first and second dielectric layers is ZnS-SiO_
6. The optical recording medium according to claim 5, wherein the optical recording medium has a SiO_2 ratio of 5 to 40 mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2242111A JPH04119885A (en) | 1990-09-11 | 1990-09-11 | Optical recording medium and preparation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2242111A JPH04119885A (en) | 1990-09-11 | 1990-09-11 | Optical recording medium and preparation thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04119885A true JPH04119885A (en) | 1992-04-21 |
Family
ID=17084465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2242111A Pending JPH04119885A (en) | 1990-09-11 | 1990-09-11 | Optical recording medium and preparation thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04119885A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06262855A (en) * | 1993-03-15 | 1994-09-20 | Mitsubishi Kasei Corp | Optical data recording medium |
| EP0874361A2 (en) * | 1997-04-25 | 1998-10-28 | Teijin Limited | Phase change optical recording medium and process for manufacturing same |
| WO2000006391A1 (en) * | 1998-07-31 | 2000-02-10 | Hitachi Maxell, Ltd. | Information recording medium and information recording method |
| EP0944050A3 (en) * | 1998-03-20 | 2001-08-16 | Sony Corporation | Optical recording medium, and method of manufacturing same |
-
1990
- 1990-09-11 JP JP2242111A patent/JPH04119885A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06262855A (en) * | 1993-03-15 | 1994-09-20 | Mitsubishi Kasei Corp | Optical data recording medium |
| EP0874361A2 (en) * | 1997-04-25 | 1998-10-28 | Teijin Limited | Phase change optical recording medium and process for manufacturing same |
| EP0874361A3 (en) * | 1997-04-25 | 1999-04-07 | Teijin Limited | Phase change optical recording medium and process for manufacturing same |
| US6141315A (en) * | 1997-04-25 | 2000-10-31 | Teijin Limited | Phase change optical recording medium containing oxygen and process for manufacturing the same |
| EP1178477A1 (en) * | 1997-04-25 | 2002-02-06 | Teijin Limited | Phase change optical recording medium and process for manufacturing same |
| US6445675B1 (en) | 1997-04-25 | 2002-09-03 | Teijin Limited | Phase change optical recording medium and process for manufacturing same |
| EP0944050A3 (en) * | 1998-03-20 | 2001-08-16 | Sony Corporation | Optical recording medium, and method of manufacturing same |
| WO2000006391A1 (en) * | 1998-07-31 | 2000-02-10 | Hitachi Maxell, Ltd. | Information recording medium and information recording method |
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