JPH07109663B2 - Optical information recording / reproducing / erasing member and manufacturing method thereof - Google Patents
Optical information recording / reproducing / erasing member and manufacturing method thereofInfo
- Publication number
- JPH07109663B2 JPH07109663B2 JP63153929A JP15392988A JPH07109663B2 JP H07109663 B2 JPH07109663 B2 JP H07109663B2 JP 63153929 A JP63153929 A JP 63153929A JP 15392988 A JP15392988 A JP 15392988A JP H07109663 B2 JPH07109663 B2 JP H07109663B2
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- JP
- Japan
- Prior art keywords
- recording
- thin film
- heat
- reproducing
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【発明の詳細な説明】 産業上の利用分野 本発明はレーザービーム等により、情報を高密度、大容
量で記録再生、及び消去できる光学情報記録再生消去部
材とその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording / reproducing / erasing member capable of recording / reproducing and erasing information with a high density and a large capacity by a laser beam and the like, and a manufacturing method thereof.
従来の技術 光ディスクメモリに関しては、TeとTeO2を主成分とする
TeOx（０＜ｘ＜2.0）薄膜を用いた追記型のディスクが
ある。さらに、レーザ光により薄膜を加熱し、溶融し、
急冷することにより、非晶質化し情報を記録しまたこれ
を加熱し、徐冷することにより結晶化し、消去すること
ができる材料としては、エス・アール・オブシンスキ
（S.R.Ovshinsky）氏等のカルコゲン材料Ge15Te81Sb2S2
等が知られている。また、As2S3やAs2Se3あるいはSb2Se
3等カルコゲン元素と周期律表第Ｖ族あるいはGe等の第I
V族元素等の組み合せからなる薄膜等が広く知られてい
る。これらの薄膜にレーザ光で情報を記録し、その情報
を消去する方法としては、あらかじめ薄膜を結晶化させ
ておき、これにφ１μｍに絞ったレーザ光を情報に対応
させて強度変調を施し、例えば、円盤状の記録ディスク
を回転せしめて照射し、このレーザ光照射部位は、薄膜
の融点以上に昇温し、かつ急冷し、非晶質化したマーク
として情報の記録がおこなえる。この情報を消去するに
際しては薄膜を加熱昇温させ、再び結晶化させる方法が
しられている。相変化を利用した光ディスクは、一般に
耐熱層を設けたディスク基板に記録薄膜を形成し、その
記録薄膜の上にさらに耐熱層を設け、熱変形等による劣
化を防止する構成を用いている。これらの層を形成した
のちに、記録薄膜層を初期化つまり結晶化させて光ディ
スクとして用いる方法が知られている。Conventional technology For optical disk memory, Te and TeO 2 are the main components
There is a write-once disc that uses a TeOx (0 <x <2.0) thin film. Furthermore, the thin film is heated and melted by laser light,
As a material that can be made amorphous by rapid cooling, record information, and can be crystallized by heating and slowly cooling it to erase, chalcogen material Ge15Te81Sb by SROvshinsky et al. 2 S 2
Etc. are known. In addition, As 2 S 3 or As 2 Se 3 or Sb 2 Se
Chalcogen elements such as 3 and Group V of the periodic table or I of Ge, etc.
Thin films and the like composed of a combination of group V elements are widely known. As a method of recording information on these thin films with laser light and erasing the information, the thin films are crystallized in advance, and the laser light focused on φ1 μm is intensity-modulated according to the information, for example, The disk-shaped recording disk is rotated for irradiation, and the laser light irradiation site is heated to a temperature equal to or higher than the melting point of the thin film and rapidly cooled to record information as an amorphized mark. When erasing this information, a method of heating and raising the temperature of the thin film and crystallizing again is used. An optical disk utilizing phase change generally has a structure in which a recording thin film is formed on a disk substrate provided with a heat resistant layer, and a heat resistant layer is further provided on the recording thin film to prevent deterioration due to thermal deformation or the like. A method is known in which, after forming these layers, the recording thin film layer is initialized, that is, crystallized and used as an optical disk.
発明が解決しようとする課題 薄膜を加熱昇温し、結晶状態Ａ、結晶状態Ｂを形成する
手段を用いる情報記録および消去可能な記録媒体あるい
は、溶融急冷非晶質化および加熱昇温結晶化の手段を用
いる情報記録および消去可能な記録媒体における課題は
加熱サイクルに対応して信号品質が変動することであ
る。この変動要因としては、記録スポット光および消去
スポット光による400℃以上の急速な加熱、冷却の多数
回のくりかえし刺激による基板材質の熱的、機械的な損
傷がある。さらに、記録薄膜の熱的、機械的な損傷があ
る。記録薄膜については、記録状態つまりアモルファス
状態と、消去状態つまり結晶状態の間で密度差が生じ
る。基板あるいは記録膜が以上のような変化を生じた場
合、記録再生、消去のサイクルにおいて、ノイズの増大
を生じ、サイクル特性の劣化が発生するという課題があ
った。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention An information recording and erasable recording medium using a means for heating and heating a thin film to form a crystalline state A and a crystalline state B, or a melt-quenched amorphization and a heating and temperature rising crystallization A problem with information recording and erasable recording media using means is that the signal quality varies with heating cycle. Factors for this fluctuation include thermal and mechanical damage to the substrate material due to repeated stimuli of repeated heating and cooling of 400 ° C. or more by recording spot light and erasing spot light. In addition, there is thermal and mechanical damage to the recording film. Regarding the recording thin film, a density difference occurs between the recording state, that is, the amorphous state and the erasing state, that is, the crystalline state. When the substrate or the recording film changes as described above, there is a problem that noise is increased in the cycle of recording / reproducing and erasing, and the cycle characteristics are deteriorated.
本発明の第一の目的はサイクル特性の安定な部材を提供
することである。第二の目的は記録部材の初期化感度を
向上させることである。A first object of the present invention is to provide a member having stable cycle characteristics. The second purpose is to improve the initialization sensitivity of the recording member.
課題を解決するための手段 本発明は、レーザ光等の照射により熱的に薄膜の状態を
変化させて情報を記録および消去する部材において、薄
膜材料として、Ge、Te、Sbの混合体とし、これを耐熱層
を設けた基板の上に形成して、あらかじめこの記録薄膜
層を結晶化させておき、密度の高い状態にし、しかるの
ちにこの上に耐熱層を設けてなることを特徴とする光学
情報記録再生消去部材とその製造方法を提供するもので
ある。Means for Solving the Problem The present invention is a member for recording and erasing information by thermally changing the state of a thin film by irradiation with laser light or the like, as a thin film material, Ge, Te, a mixture of Sb, It is characterized in that this is formed on a substrate provided with a heat-resistant layer, and this recording thin film layer is crystallized in advance so as to have a high density state, and then a heat-resistant layer is provided thereon. An optical information recording / reproducing / erasing member and a method for manufacturing the same are provided.
作用 以上の構成により、多サイクル記録および消去において
C/N、消去率特性がすぐれている。また、記録部材の初
期化感度が高いという特徴が得られる。With the above configuration, in multi-cycle recording and erasing
Excellent C / N and erase rate characteristics. Further, it is possible to obtain the feature that the initialization sensitivity of the recording member is high.
実施例１ 以下本発明の一実施例について、図面を参照しながら説
明する。Embodiment 1 An embodiment of the present invention will be described below with reference to the drawings.
記録層である薄膜を形成する基板としては、あらかじ
め、レーザ光案内用の溝あるいは、ピット列を形成した
ポリカーボネイト等の樹脂基板あるいは、ガラス板を用
いる。この表面にあらかじめ耐熱性のすぐれたZnSある
いはSiO2等の第一の無機誘電体層を形成しておく。この
誘電体層としてはSiO2を15モル％以上含ませたZnS誘電
体層が好ましい。As a substrate on which a thin film which is a recording layer is formed, a resin substrate such as a polycarbonate for forming laser light guiding grooves or pit rows or a glass plate is used in advance. A first inorganic dielectric layer such as ZnS or SiO 2 having excellent heat resistance is formed on this surface in advance. The dielectric layer is preferably a ZnS dielectric layer containing 15 mol% or more of SiO 2 .
この上に、Ge、Te、Sbからなる混合薄膜を形成する。薄
膜形成の方法としては、真空蒸着あるいは、スパッタ法
が使用できる。かかる状態においては、記録薄膜層はア
モルファス状態である。そこで記録薄膜層を加熱し結晶
化させることが本発明の特徴であり、加熱源としてはAr
レーザ、半導体レーザあるいはハロゲンランプ等が使用
できる。結晶化すなわち初期化することによりディスク
の反射率は増大する。しかるのちに、第二の無機誘電体
層を耐熱層として、この記録薄膜層の上に形成する。さ
らにこの無機誘電体層の上に反射層を設けることによ
り、ディスクの記録、消去感度の向上をはかることもで
きる。この薄膜の膜厚として80nmを選ぶ。さらに第二の
耐熱層の上に保護板としてポリカーボネイト板を接着剤
で密着する。A mixed thin film of Ge, Te, and Sb is formed on this. As a method for forming a thin film, vacuum deposition or sputtering can be used. In such a state, the recording thin film layer is in an amorphous state. Therefore, it is a feature of the present invention that the recording thin film layer is heated and crystallized.
A laser, a semiconductor laser or a halogen lamp can be used. Crystallization or initialization increases the reflectivity of the disc. After that, the second inorganic dielectric layer is formed as a heat resistant layer on the recording thin film layer. Further, by providing a reflective layer on this inorganic dielectric layer, the recording and erasing sensitivity of the disc can be improved. Choose 80 nm as the thickness of this thin film. Further, a polycarbonate plate as a protective plate is adhered onto the second heat-resistant layer with an adhesive.
130mmのディスクとして、1800rpm回転でf1＝3.43MHzの
信号と、f2＝1.0MHzの信号のオーバーライト特性を測定
する。オーバーライトは、１ヶのサークルスポットφ１
μｍのレーザ光により、高いパワーレベル16mW、低いパ
ワーレベル8mWのパワーレベル間の変調で、高いパワー
レベルで非晶質化マークを形成し、低いパワーレベルで
非晶質化マークを結晶化して消去する同時消録の方法で
ある。As a 130mm disk, measure the overwrite characteristics of the signal at f1 = 3.43MHz and the signal at f2 = 1.0MHz at 1800rpm. Overwrite is one circle spot φ1
Amorphization marks are formed at high power levels by modulation between high power levels of 16 mW and low power levels of 8 mW by laser light of μm, and the amorphous marks are crystallized and erased at low power levels. It is a method of simultaneous erasure.
第１図に記録薄膜の加熱結晶化状態の模式図をしめす。
蒸着状態に比べ加熱結晶化した部分は密度が増大してい
る。加熱結晶化初期化するのに必要なパワーは第２の誘
電体を形成し、これに保護板を接着したものに比較して
約半分のパワーで可能であり、初期化感度が高い。サイ
クル特性については、ディスク構成後に結晶化初期化し
たものに比較して100万サイクル測定においてノイズレ
ベルの変動は3dB以内で安定している。FIG. 1 shows a schematic diagram of the heat-crystallized state of the recording thin film.
The density of the heated and crystallized portion is higher than that in the vapor deposition state. The power required to initialize the crystallization by heating is about half the power required to form the second dielectric and attach the protective plate thereto, and the initialization sensitivity is high. Regarding the cycle characteristics, the fluctuation of the noise level is stable within 3 dB in the 1 million cycle measurement, compared to the case where the crystallization is initialized after the disk configuration.
実施例２ 結晶化初期化は記録膜形成時におこなうことも可能であ
る。真空チャンバー内においてハロゲンランプを用いて
基板を加熱しながら記録膜を形成する。あらかじめ基板
の上に第一の誘電体層を設け、この上に記録薄膜層を加
熱しながら形成する。記録薄膜層は形成すると同時に結
晶化初期化がなされる。つぎにこの結晶化した記録薄膜
層の上に第２の耐熱層誘電体層を設ける。しかるのちに
接着剤により保護板をはり合わせる。記録薄膜の組成と
してGe,Te,Sbの混合体を用いることにより１つのビーム
でオーバライトできるディスクを得る。記録特性はC/N
比50dB以上、消去特性は消去率30dB以上を得る。Example 2 Initialization of crystallization can also be performed at the time of forming a recording film. The recording film is formed while heating the substrate using a halogen lamp in the vacuum chamber. The first dielectric layer is provided on the substrate in advance, and the recording thin film layer is formed thereon while heating. At the same time as the recording thin film layer is formed, the crystallization is initialized. Next, a second heat resistant dielectric layer is provided on the crystallized recording thin film layer. After that, the protective plate is attached with an adhesive. By using a mixture of Ge, Te and Sb as the composition of the recording thin film, a disc that can be overwritten with one beam is obtained. Recording characteristic is C / N
The ratio is 50 dB or more, and the erasing property is 30% or more.
実施例３ 基板上に第一の耐熱層を設け、その上に記録薄膜層を形
成し、この記録薄膜層の結晶化において、加熱条件を結
晶化飽和パワーより低パワーに設定する。これにより、
この記録薄膜の結晶化収縮率は小さくなる。同様に記録
薄膜形成時における加熱条件を下げることにより収縮率
を小さくできる。この状態で第二の耐熱層を記録薄膜層
の上に形成し、保護板を設ける。かかるディスクに信号
記録をほどこすと、トラック上に非晶質マークと結晶部
分が交互に配列して信号記録がおこなえる。この場合
は、元の中間的な収縮状態と信号記録時の収縮状態の平
均的な密度が等価になり、体積差が減少し、サイクル特
性が安定になる。Example 3 A first heat-resistant layer is provided on a substrate, a recording thin film layer is formed on the first heat resistant layer, and the heating condition for crystallization of this recording thin film layer is set to a power lower than the crystallization saturation power. This allows
The crystallization shrinkage of this recording thin film becomes small. Similarly, the shrinkage rate can be reduced by lowering the heating conditions when forming the recording thin film. In this state, the second heat resistant layer is formed on the recording thin film layer and a protective plate is provided. When signal recording is performed on such a disc, amorphous marks and crystal parts are alternately arranged on the track to perform signal recording. In this case, the average density of the original intermediate contraction state and the average density of the contraction state at the time of signal recording become equivalent, the volume difference decreases, and the cycle characteristics become stable.
発明の効果 レーザ光による記録再生消去をおこなう部材において、
記録薄膜層を耐熱層でサンドイッチする構成で、記録薄
膜を加熱結晶化した後に、この上に第２の耐熱層を形成
して構成する光学記録再生消去部材はつぎの効果を有す
る。Effects of the Invention In a member for performing recording / reproducing / erasing by laser light,
An optical recording / reproducing / erasing member having a structure in which a recording thin film layer is sandwiched by a heat-resistant layer, which is obtained by heating and crystallizing the recording thin film and then forming a second heat-resistant layer thereon, has the following effects.
（１）多サイクル記録および消去においてC/N,消去率特
性がすぐれる。(1) Excellent C / N and erase rate characteristics in multi-cycle recording and erasing.
（２）記録部材の初期化感度が高い。(2) Initialization sensitivity of the recording member is high.
第１図は本発明の一実施例における光学情報記録再生消
去部材の記録薄膜形成後一部結晶化した状態の略図と加
熱光ビームの模式図、第２図は記録薄膜形成時に加熱結
晶化する方法の説明図である。 １……基板、２……第一の耐熱層、３……記録薄膜層、
４……記録薄膜層結晶化部位、５……加熱光ビーム、６
……記録薄膜蒸着源、７……膜加熱ランプ、８……真空
チャンバー。FIG. 1 is a schematic view of a partially crystallized state of a recording thin film of an optical information recording / reproducing / erasing member and a schematic view of a heating light beam in an embodiment of the present invention, and FIG. 2 is heated and crystallized when the recording thin film is formed. It is explanatory drawing of a method. 1 ... Substrate, 2 ... First heat resistant layer, 3 ... Recording thin film layer,
4 ... Recording thin film layer crystallization site, 5 ... Heating light beam, 6
...... Recording thin film deposition source, 7 ・ ・ ・ Film heating lamp, 8 ・ ・ ・ Vacuum chamber.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 河原 克巳 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭63−103453（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsumi Kawahara 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-63-103453 (JP, A)
Claims (6)
を吸収して昇温し、構造変化し、光学定数がかわる性質
を有する記録薄膜を用い、前記レーザー光の強度変調に
より情報を記録する部材において、前記記録薄膜層の上
面および下面に耐熱層を有する構成で、基盤上に第一の
耐熱層を設け次に前記記録薄膜層を設け前記記録薄膜層
の体積を収縮させた状態で第二の耐熱層を設けてなるこ
とを特徴とする光学情報記録再生消去部材。1. A member for recording information by intensity modulation of a laser beam, which uses a recording thin film that absorbs the energy of the laser beam to raise its temperature, change its structure, and change its optical constant. A structure having heat-resistant layers on the upper surface and the lower surface of the recording thin-film layer, the first heat-resistant layer is provided on the substrate, then the recording thin-film layer is provided, and the second thin-film layer is formed in a state where the volume of the recording thin-film layer is contracted. An optical information recording / reproducing / erasing member comprising a heat resistant layer.
で形成し、次にその上に第二の耐熱層を形成してなるこ
とを特徴とする請求項（１）記載の光学情報記録再生消
去部材。2. A recording thin film layer is formed in a crystalline state on the first heat-resistant layer, and then a second heat-resistant layer is formed on the recording thin-film layer. Optical information recording / reproducing / erasing member.
の後に前記記録薄膜層を加熱し、結晶状態に変化せし
め、しかる後に第二の耐熱層を形成してなることを特徴
とする光学情報記録再生消去部材の製造方法。3. A recording thin film layer is provided on the first heat-resistant layer, and then the recording thin film layer is heated to change to a crystalline state, and then the second heat-resistant layer is formed. And a method for manufacturing an optical information recording / reproducing / erasing member.
記録薄膜層の体積をアモルファス状態と結晶状態のほぼ
平均の体積にせしめて、その上に第二の耐熱層を形成し
てなることを特徴とする請求項（１）記載の光学情報記
録再生消去部材。4. A recording thin film layer is provided on the first heat-resistant layer, the volume of the recording thin film layer is set to be approximately the average volume of the amorphous state and the crystalline state, and the second heat-resistant layer is formed thereon. The optical information recording / reproducing / erasing member according to claim 1, wherein
いることを特徴とする請求項（１）記載の光学情報記録
再生消去部材。5. The optical information recording / reproducing / erasing member according to claim 1, wherein ZnS containing SiO 2 is used as the heat resistant layer.
用いることを特徴とする請求項（１）記載の光学情報記
録再生消去部材。6. The optical information recording / reproducing / erasing member according to claim 1, wherein a material made of Te, Ge, Sb is used for the recording thin film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63153929A JPH07109663B2 (en) | 1988-06-22 | 1988-06-22 | Optical information recording / reproducing / erasing member and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63153929A JPH07109663B2 (en) | 1988-06-22 | 1988-06-22 | Optical information recording / reproducing / erasing member and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH025246A JPH025246A (en) | 1990-01-10 |
| JPH07109663B2 true JPH07109663B2 (en) | 1995-11-22 |
Family
ID=15573166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63153929A Expired - Fee Related JPH07109663B2 (en) | 1988-06-22 | 1988-06-22 | Optical information recording / reproducing / erasing member and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07109663B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2990036B2 (en) * | 1995-02-13 | 1999-12-13 | ティーディーケイ株式会社 | Optical recording medium and manufacturing method thereof |
| US6242157B1 (en) | 1996-08-09 | 2001-06-05 | Tdk Corporation | Optical recording medium and method for making |
| JPH10241211A (en) * | 1997-02-27 | 1998-09-11 | Tdk Corp | Production of optical recording medium |
| US6537721B2 (en) | 1999-02-15 | 2003-03-25 | Tdk Corporation | Optical recording medium and method for its initialization |
| US6683275B2 (en) | 2000-06-23 | 2004-01-27 | Memex Optical Media Solutions Ag | Method and apparatus for fabricating phase-change recording medium |
| JP2005108265A (en) * | 2001-10-12 | 2005-04-21 | Tdk Corp | Manufacturing method of optical recording medium |
-
1988
- 1988-06-22 JP JP63153929A patent/JPH07109663B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH025246A (en) | 1990-01-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |