JPH0410616Y2 - - Google Patents
Info
- Publication number
- JPH0410616Y2 JPH0410616Y2 JP17622085U JP17622085U JPH0410616Y2 JP H0410616 Y2 JPH0410616 Y2 JP H0410616Y2 JP 17622085 U JP17622085 U JP 17622085U JP 17622085 U JP17622085 U JP 17622085U JP H0410616 Y2 JPH0410616 Y2 JP H0410616Y2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dielectric layer
- insulator
- terminal portion
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 56
- 239000012212 insulator Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000006059 cover glass Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011295 pitch Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
本考案は薄膜ELパネルに関し、詳しくは各種
情報のデイスプレイをEL〔電界発光〕で行う薄膜
ELマトリクス型デイスプレイパネルに関するも
のである。[Detailed explanation of the invention] Industrial application field This invention relates to a thin-film EL panel.
This relates to an EL matrix type display panel.
従来の技術
薄膜ELマトリクス型デイスプレイパネルは、
ガラスパツケージ構造のものが一般的で、その構
造例を第８図及び第９図を参照しながら説明す
る。尚、第８図の左半分はＸ方向の断面図、右半
分はＸ方向と直交するＹ方向の断面図を示す。同
図において、１は透光性を有するガラス基板、２
は該ガラス基板１上に形成されたマトリクス型の
薄膜EL素子である。上記薄膜EL素子２におい
て、３はガラス基板１上にI.T.0.を蒸着法やスパ
ツタ法でＸ方向に沿つて所定のピツチで形成した
多数のストライプ状の透明電極、４は透明電極３
上を覆うY2O3等の透明な第１の誘電体層、５は
第１の誘電体層４上に積層形成したZnS：Mn等
の発光層、６は該発光層５上を覆うY2O3等の透
明な第２の誘電体層、７は第２の誘電体層６上に
Ｙ方向に沿つて所定ピツチで多数のストライプ状
に形成したAl蒸着膜による背面電極である。８
はガラス基板１上にエポキシ樹脂等の接着剤９を
介して固着されて前記薄膜EL素子２を気密封止
する逆皿状のカバーガラスで、ガラス基板１と共
働して薄膜EL素子２を封入する外囲器１０を構
成する。１１は薄膜EL素子２の耐湿性を向上さ
せるため、外囲器１０の内部空間に充填された絶
縁性保護流体のシリコンオイルで、カバーガラス
８の一部に形成された穴１２から注入され、注入
後、上記穴１２は蓋板１３で密閉される〔特公昭
59−2157号公報〕。Conventional technology Thin film EL matrix type display panels are
A glass package structure is common, and an example of this structure will be explained with reference to FIGS. 8 and 9. The left half of FIG. 8 is a sectional view in the X direction, and the right half is a sectional view in the Y direction orthogonal to the X direction. In the figure, 1 is a transparent glass substrate, 2
is a matrix type thin film EL element formed on the glass substrate 1. In the thin film EL element 2, 3 is a large number of striped transparent electrodes formed by depositing IT0. on the glass substrate 1 at a predetermined pitch along the X direction by vapor deposition or sputtering, and 4 is a transparent electrode 3.
A transparent first dielectric layer such as Y 2 O 3 covering the top, 5 a light emitting layer such as ZnS:Mn laminated on the first dielectric layer 4, and 6 a Y covering the light emitting layer 5. A transparent second dielectric layer 7 such as 2 O 3 is a back electrode made of an Al vapor deposited film formed on the second dielectric layer 6 in the form of a large number of stripes at predetermined pitches along the Y direction. 8
is an inverted dish-shaped cover glass that is fixed onto the glass substrate 1 via an adhesive 9 such as epoxy resin to hermetically seal the thin film EL element 2; Constructs an envelope 10 for enclosing. In order to improve the moisture resistance of the thin film EL element 2, reference numeral 11 denotes silicone oil, which is an insulating protective fluid filled in the inner space of the envelope 10, and is injected through a hole 12 formed in a part of the cover glass 8. After injection, the hole 12 is sealed with a cover plate 13 [Tokuko Sho.
Publication No. 59-2157].
ところで、上記透明電極３と背面電極７の各一
端部は、ガラス基板１の周辺部に延設されて、
各々の延設端部はガラス基板１の周辺部上に形成
された端子部１４，１５に重畳接続される。これ
らの端子部１４，１５は同一の構造を有し、例え
ば、端子部１５は、第９図に示すように金属の多
層体で、例えばガラスとなじみの良いTiからな
る最下層１５ａ、Alからなる中間層１５ｂ、及
び半田となじみの良いNiからなる最上層１５ｃ
の３層構造である。そして、第８図Ｘ方向に沿つ
て配設された透明電極３側の端子部１４は、透明
電極３の延設端部上に重畳して形成され、一方、
Ｙ方向に沿つて配設された背面電極７側の端子部
１５上には、背面電極７の延設端部が重畳して形
成される。１６は薄膜EL素子２の電極外部引出
し用のフレキシブルリードで、プラスチツクフイ
ルム１７に銅箔等の外部リード１８を多数被着形
成したものであり、外囲器１０から露出する多数
の端子部１４，１５上に対応する外部リード１８
の端部が半田にて電気的及び機械的に接続される
〔特開昭60−15682号公報〕。 By the way, one end of each of the transparent electrode 3 and the back electrode 7 is extended to the periphery of the glass substrate 1,
Each extended end portion is connected to terminal portions 14 and 15 formed on the peripheral portion of the glass substrate 1 in an overlapping manner. These terminal parts 14 and 15 have the same structure. For example, the terminal part 15 is a multilayered metal body as shown in FIG. an intermediate layer 15b made of Ni, and a top layer 15c made of Ni, which is compatible with solder.
It has a three-layer structure. The terminal portion 14 on the side of the transparent electrode 3 disposed along the X direction in FIG. 8 is formed to overlap the extending end portion of the transparent electrode 3.
An extended end portion of the back electrode 7 is formed to overlap with the terminal portion 15 on the back electrode 7 side disposed along the Y direction. Reference numeral 16 denotes a flexible lead for externally extending the electrodes of the thin-film EL element 2, which is made by adhering a large number of external leads 18 such as copper foil to a plastic film 17. External lead 18 corresponding to 15
The ends of the two are electrically and mechanically connected by soldering [JP-A-60-15682].
考案が解決しようとする問題点
ところで、上記薄膜EL素子２の周縁部では、
第１０図に示すように、第１の誘電体層４及び第
２の誘電体層６の厚みのため、ガラス基板１に対
して段差ｈが生じる。また、上記発光層５の形成
に際しては、耐湿性の向上を図るため、該発光層
５の面積が第１の誘電体層４の面積よりも小さく
なるように発光層５を第１の誘電体層４上に積層
し、更に上記発光層５を覆うように第２の誘電体
層６を発光層５上に形成している。そのため、上
記第２の誘電体層６の周縁部で段差h′が生じる。
この場合、特に薄膜EL素子２の背面電極側周縁
部では、第２の誘電体層６上にストライプ状に多
数の背面電極７が蒸着形成されているため、この
部分で段差ｈ，h′が生じていると、第１０図に示
すように、背面電極７が段切れ状態となつて薄膜
EL素子２への通電が不能となり、信頼性も大幅
に低下するという問題点があつた。Problems to be solved by the invention By the way, at the periphery of the thin film EL element 2,
As shown in FIG. 10, a step h occurs with respect to the glass substrate 1 due to the thickness of the first dielectric layer 4 and the second dielectric layer 6. In addition, when forming the light emitting layer 5, in order to improve moisture resistance, the light emitting layer 5 is coated with a first dielectric material such that the area of the light emitting layer 5 is smaller than the area of the first dielectric layer 4. A second dielectric layer 6 is laminated on the layer 4 and further formed on the light emitting layer 5 so as to cover the light emitting layer 5. Therefore, a step h' occurs at the peripheral edge of the second dielectric layer 6.
In this case, especially at the peripheral edge of the thin film EL element 2 on the back electrode side, a large number of back electrodes 7 are deposited in stripes on the second dielectric layer 6, so the steps h and h' are formed in this part. If this occurs, the back electrode 7 becomes disconnected and the thin film is broken, as shown in FIG.
There was a problem in that the EL element 2 could no longer be energized and its reliability was significantly reduced.
問題点を解決するための手段
本考案は上記問題点に鑑みて提案されたもの
で、この問題点を解決するための技術的手段は、
透光性基板上に、透明電極、第１の誘電体層、発
光層、第２の誘電体層及び背面電極を順次積層し
てなる薄膜EL素子を形成し、上記透明電極及び
背面電極を外部に引出す端子部を透光性基板の周
辺部に形成し、前記透明電極及び背面電極を前記
端子部に夫々接続した薄膜ELパネルにおいて、
上記薄膜EL素子の高さに、端子部の高さを略一
致させ、薄膜EL素子と端子部間に絶縁体を埋込
み形成すると共に、該絶縁体上に、薄膜EL素子
の第２の誘電体層と端子部とに跨がる背面電極を
形成したものである。Means for solving the problem The present invention was proposed in view of the above problem, and the technical means for solving this problem are as follows:
A thin film EL device is formed by sequentially laminating a transparent electrode, a first dielectric layer, a light emitting layer, a second dielectric layer, and a back electrode on a transparent substrate, and the transparent electrode and back electrode are externally stacked. In a thin film EL panel in which a terminal portion to be drawn out is formed in a peripheral portion of a transparent substrate, and the transparent electrode and the back electrode are respectively connected to the terminal portion,
The height of the terminal section is made approximately equal to the height of the thin film EL element, an insulator is embedded between the thin film EL element and the terminal section, and a second dielectric of the thin film EL element is formed on the insulator. A back electrode is formed spanning the layer and the terminal portion.
作 用
本考案に係る薄膜ELパネルによれば、薄膜EL
素子と端子部との高さを略一致させた上で、該薄
膜EL素子と端子部間に絶縁体を、上記薄膜EL素
子及び端子部と略同一高さで埋込み形成すること
により、上記薄膜EL素子、絶縁体及び端子部に
形成される略平面上に、背面電極が段差なく蒸着
形成される。Effect According to the thin film EL panel according to the present invention, the thin film EL
By making the heights of the element and the terminal portion approximately the same, and then embedding an insulator between the thin film EL element and the terminal portion at approximately the same height as the thin film EL element and the terminal portion, the thin film A back electrode is formed by vapor deposition on a substantially flat surface formed on the EL element, the insulator, and the terminal portion without any difference in level.
実施例
本考案を第８図に示す薄膜ELマトリクス型デ
イスプレイパネルに適用した実施例を、第１図乃
至第７図を参照しながら説明する。第１図及び第
２図において、２０はガラス基板、２１は該ガラ
ス基板２０上に形成されたマトリクス型の薄膜
EL素子である。この薄膜EL素子２１における、
２２はガラス基板２０上にI.T.O.を蒸着法やスパ
ツタ法でＸ方向に沿つて所定のピツチで形成した
多数のストライプ状の透明電極、２３は透明電極
２２上を覆うY2O3等の透明な第１の誘電体層、
２４は第１の誘電体層２３上に積層形成した
ZnS：Mn等の発光層、２５は該発光層２４上に
積層形成したY2O3等の透明な第２の誘電体層で
ある。上記第１の誘電体層２３、発光層２４及び
第２の誘電体層２５は、同一のマスクを利用して
外形寸法に順次蒸着形成される。２６は上記第２
の誘電体層２５上にＹ方向に沿つて所定ピツチで
多数のストライプ状に形成したAl蒸着膜による
背面電極、２７，２８は上記透明電極２２及び背
面電極２６を外部に引出すため、ガラス基板２０
の周辺部上に形成された端子部で、従来と同様、
Ti等の最下層２７ａ，２８ａ、Al等の中間層２
７ｂ，２８ｂ及びNi等の最上層２７ｃ，２８ｃ
からなる３層構造の金属多層体である。この端子
部２７，２８の高さは、薄膜EL素子２１、即ち
第２の誘電体層２５までの高さに略一致するよう
設定される。２９，３０は薄膜EL素子２１と端
子部２７，２８間にCVD法や蒸着法で埋込み形
成されたSiO2やAl2O3等の絶縁体で、後述するよ
うに上記薄膜EL素子２１及び端子部２７，２８
の高さと略一致するように形成する。上記薄膜
EL素子２１の周端面に露呈した発光層２４は、
この絶縁体２９，３０によつて保護される。上記
透明電極２２と背面電極２６の各一端部は、ガラ
ス基板２０の周辺部に延設され、第１図Ｘ方向に
沿つて配設された透明電極側の端子部２７は、透
明電極２２の延設端部上に重畳される。一方、背
面電極２６の延設端部は、絶縁体３０を介して、
第１図Ｙ方向に沿つて配設された背面電極側の端
子部２８上に跨がつて重畳される。Embodiment An embodiment in which the present invention is applied to a thin film EL matrix type display panel shown in FIG. 8 will be described with reference to FIGS. 1 to 7. In FIGS. 1 and 2, 20 is a glass substrate, and 21 is a matrix-type thin film formed on the glass substrate 20.
It is an EL element. In this thin film EL element 21,
22 is a large number of striped transparent electrodes formed with ITO on a glass substrate 20 at predetermined pitches along the X direction by vapor deposition or sputtering; 23 is a transparent electrode such as Y 2 O 3 that covers the transparent electrode 22; a first dielectric layer;
24 is laminated on the first dielectric layer 23
A light emitting layer 25 is made of ZnS:Mn or the like, and 25 is a transparent second dielectric layer made of Y 2 O 3 or the like laminated on the light emitting layer 24 . The first dielectric layer 23, the light-emitting layer 24, and the second dielectric layer 25 are sequentially deposited to the outer dimensions using the same mask. 26 is the second above
Back electrodes 27 and 28 are made of Al vapor deposited films formed in a large number of stripes at predetermined pitches along the Y direction on the dielectric layer 25 of the glass substrate 20 in order to bring out the transparent electrode 22 and the back electrode 26 to the outside.
The terminal part is formed on the peripheral part of the
Bottom layer 27a, 28a of Ti etc., middle layer 2 of Al etc.
7b, 28b and top layer 27c, 28c of Ni etc.
It is a metal multilayer body with a three-layer structure. The heights of the terminal portions 27 and 28 are set to substantially match the height up to the thin film EL element 21, that is, the second dielectric layer 25. 29 and 30 are insulators such as SiO 2 or Al 2 O 3 buried between the thin film EL element 21 and the terminal parts 27 and 28 by CVD or vapor deposition, and as described later, the thin film EL element 21 and the terminals Part 27, 28
The height should be approximately the same as the height of the The above thin film
The light emitting layer 24 exposed on the peripheral end surface of the EL element 21 is
It is protected by these insulators 29 and 30. One end of each of the transparent electrode 22 and the back electrode 26 extends to the periphery of the glass substrate 20, and a terminal portion 27 on the transparent electrode side disposed along the X direction in FIG. It is superimposed on the extended end. On the other hand, the extended end of the back electrode 26 is connected to the insulator 30 through the
It straddles and overlaps the terminal portion 28 on the back electrode side disposed along the Y direction in FIG.
３１は従来と同様に、薄膜EL素子２１を気密
封止するカバーガラスで、ガラス基板２０と共働
して上記薄膜EL素子２１の外囲器３２を構成す
る。３３は外囲器３２の内部空間に充填された絶
縁性保護流体の一例としてのシリコンオイルで、
カバーガラス３１の一部に形成された穴３４から
注入され、注入後に上記穴３４は蓋板３５で密閉
される。また、３６も従来と同様に、薄膜EL素
子２１の電極外部引出し用のフレキシブルリード
で、プラスチツクフイルム３７に銅箔等の外部リ
ード３８を多数被着形成したものであり、前記端
子部２７，２８上に対応する外部リード３８の端
部が半田にて電気的及び機械的に接続される。 A cover glass 31 hermetically seals the thin film EL element 21, as in the conventional case, and works together with the glass substrate 20 to form an envelope 32 of the thin film EL element 21. 33 is silicone oil as an example of an insulating protective fluid filled in the internal space of the envelope 32;
The liquid is injected through a hole 34 formed in a part of the cover glass 31, and after the injection, the hole 34 is sealed with a cover plate 35. Further, 36 is a flexible lead for externally extending the electrodes of the thin film EL element 21, and is made by adhering a large number of external leads 38 such as copper foil to a plastic film 37. The ends of the external leads 38 corresponding to the top are electrically and mechanically connected with solder.
ところで、前記絶縁体２９，３０は、フオトリ
ソグラフイーのリフトオフ法を利用して、第３図
乃至第６図に示す要領にて形成される。まず、第
３図に示すようにガラス基板２０上に薄膜EL素
子２１及び端子部２８を形成した上で、該薄膜
EL素子２１、端子部２８及びガラス基板２０上
にレジスト膜３９を被着形成する。そしてこのレ
ジスト膜３９の所定部位、即ち薄膜EL素子２１
と端子部２８間を、マスク〔図示せず〕を利用し
て、第４図に示すように窓明けする。このレジス
ト膜３９の窓明けは、例えば１種類のレジスト材
を使用してその上層部のみにクロルベンゼン等の
有機溶剤を含浸させ、その部分での現像液に対す
る溶解速度を、下層部の溶解時間よりも遅らせる
ことにより、薄膜EL素子２１と端子部２８間の
寸法l1よりも小さい寸法l2の開口部４０を形成し
て段差を設ける。或いはレジスト膜３９の上層部
と下層部とで、現像液に対する溶解速度が異なる
２種類のレジスト材を使用することも可能であ
る。上記レジスト膜３９の窓明け後、第５図に示
すように薄膜EL素子２１と端子部２８間のガラ
ス基板２０上、及びレジスト膜３９上にSiO2や
Al2O3等の絶縁体３０を電子ビーム蒸着法やCVD
法により被着形成する。この時、レジスト膜３９
の開口部４０に段差があるため、絶縁体３０がガ
ラス基板２０上に形成される部分とレジスト膜３
９上に形成される部分との間で確実に段切れ状態
となり、後述するレジスト膜３９及びその上の絶
縁体３０の除去が容易となる。そして上記絶縁体
３０を薄膜EL素子２１及び端子部２８と略同一
高さに形成した後、有機溶剤中に浸漬して、第６
図に示すようにレジスト膜３９を、その上の絶縁
体３０と共に除去する。その後、前述の背面電極
２６を、絶縁体３０上に、第２の誘電体層２５及
び端子部２８間に跨がつてAlによる電子ビーム
蒸着や抵抗線加熱蒸着により被着形成する。上記
背面電極２６は、第２の誘電体層２５、絶縁体３
０及び端子部２８によつて形成される略平面上に
段差を生じることなく被着される。尚、透明電極
側の端子部２７と薄膜EL素子２１間の絶縁体２
９も、上述した絶縁体３０の形成と同時に形成さ
れる。 Incidentally, the insulators 29 and 30 are formed using the lift-off method of photolithography in the manner shown in FIGS. 3 to 6. First, as shown in FIG. 3, after forming a thin film EL element 21 and a terminal part 28 on a glass substrate 20,
A resist film 39 is formed on the EL element 21, the terminal portion 28, and the glass substrate 20. A predetermined portion of this resist film 39, that is, the thin film EL element 21
A window is opened between the terminal portion 28 and the terminal portion 28 using a mask (not shown) as shown in FIG. To open the window of the resist film 39, for example, one type of resist material is used and only the upper layer thereof is impregnated with an organic solvent such as chlorobenzene, and the dissolution rate in the developing solution at that portion is determined by the dissolution time of the lower layer. By delaying the opening 40 between the thin film EL element 21 and the terminal portion 28 with a dimension l 2 smaller than the dimension l 1 , a step is provided. Alternatively, it is also possible to use two types of resist materials having different dissolution rates in the developer for the upper layer and the lower layer of the resist film 39. After opening the resist film 39, as shown in FIG. 5, SiO 2 or
Insulator 30 such as Al 2 O 3 is deposited by electron beam evaporation method or CVD.
Adhesion is formed by the method. At this time, the resist film 39
Since there is a step in the opening 40, the part where the insulator 30 is formed on the glass substrate 20 and the resist film 3
The resist film 39 and the insulator 30 thereon, which will be described later, can be easily removed because the resist film 39 and the insulator 30 thereon are reliably separated from each other. After forming the insulator 30 at approximately the same height as the thin film EL element 21 and the terminal portion 28, the insulator 30 is immersed in an organic solvent.
As shown in the figure, the resist film 39 is removed together with the insulator 30 thereon. Thereafter, the above-mentioned back electrode 26 is formed on the insulator 30, spanning between the second dielectric layer 25 and the terminal portion 28, by electron beam evaporation of Al or resistance wire heating evaporation. The back electrode 26 includes a second dielectric layer 25, an insulator 3
0 and the terminal portion 28 without creating a step. Note that the insulator 2 between the terminal portion 27 on the transparent electrode side and the thin film EL element 21
9 is also formed simultaneously with the formation of the insulator 30 described above.
また上記実施例では、第１の誘電体層２３、発
光層２４及び第２の誘電体層２５を同一形状のマ
スクで積層形成した薄膜EL素子２１について説
明したが、本考案はこれに限定されることなく、
例えば第７図に示すように従来と同一構造の薄膜
EL素子２、即ち発光層５の面積を、第１、第２
の誘電体層４，６よりも小さく形成して、該発光
層５が第１、第２の誘電体層４，６によつて完全
に囲繞されるようにした薄膜EL素子２について
も適用可能である。この場合も、前述と同一要領
で上記薄膜EL素子２と端子部２８間のガラス基
板１上に絶縁体３０′を埋込み形成し、該絶縁体
３０′上に第２の誘電体層６と端子部２８に跨が
るように背面電極２６′を被着形成する。この場
合、上記薄膜EL素子２の透明電極側周縁部では、
発光層５の端面が第２の誘電体層６で覆われてい
るため、薄膜EL素子２と端子部〔図示せず〕間
には必ずしも絶縁体を必要としない。しかし、絶
縁体を設けた方が、カバーガラスの取付けに際し
て、ガラス基板の透明電極側と背面電極側の周縁
部で絶縁体３０′の有無で段差を生じることがな
く、カバーガラスをガラス基板上に固着する際に
有利である。 Further, in the above embodiment, the thin film EL element 21 was described in which the first dielectric layer 23, the light emitting layer 24, and the second dielectric layer 25 were laminated using masks of the same shape, but the present invention is not limited to this. without any trouble,
For example, as shown in Figure 7, a thin film with the same structure as the conventional one
The area of the EL element 2, that is, the light emitting layer 5 is divided into the first and second areas.
It is also applicable to a thin film EL element 2 formed smaller than the first and second dielectric layers 4 and 6 so that the light emitting layer 5 is completely surrounded by the first and second dielectric layers 4 and 6. It is. In this case as well, an insulator 30' is embedded in the glass substrate 1 between the thin film EL element 2 and the terminal section 28 in the same manner as described above, and the second dielectric layer 6 and the terminal are formed on the insulator 30'. A back electrode 26' is formed so as to straddle the portion 28. In this case, at the peripheral edge of the thin film EL element 2 on the transparent electrode side,
Since the end face of the light emitting layer 5 is covered with the second dielectric layer 6, an insulator is not necessarily required between the thin film EL element 2 and the terminal portion (not shown). However, if an insulator is provided, there will be no difference in level between the peripheral edges of the transparent electrode side and the back electrode side of the glass substrate when attaching the cover glass, depending on the presence or absence of the insulator 30'. This is advantageous when adhering to.
なお以上、薄膜EL素子が一層形成した例につ
いて説明したが、本考案は、これに限定されるこ
となく、例えば異色の薄膜EL素子を多層形成し
た多色発光ELパネルに適用した場合は非常に有
効である。 Although an example in which thin-film EL elements are formed in one layer has been described above, the present invention is not limited to this, but can be very useful when applied to, for example, a multi-color emitting EL panel in which thin-film EL elements of different colors are formed in multiple layers. It is valid.
考案の効果
本考案に係る薄膜ELパネルによれば、薄膜EL
素子と端子部の高さを略一致させ、薄膜EL素子
と端子部間に両者と略同一高さの絶縁体を埋込み
形成すると共に、該絶縁体上に、上記薄膜EL素
子と端子部とに跨がる背面電極を形成したから、
上記背面電極が段切れ状態となることなく、背面
電極の断線を未然に防止することが可能となつ
て、信頼性の高い薄膜ELパネルを提供すること
が実現容易となる。Effects of the invention According to the thin film EL panel according to the invention, the thin film EL
The heights of the element and the terminal section are approximately the same, and an insulator having approximately the same height as both is buried between the thin film EL element and the terminal section. Because we formed a back electrode that spans the
Since the back electrode does not become disconnected, it becomes possible to prevent the back electrode from breaking, and it becomes easy to provide a highly reliable thin film EL panel.
第１図は本考案に係る薄膜ELパネルの一実施
例を示す断面図、第２図は第１図の要部拡大断面
図、第３図乃至第６図は絶縁体の形成要領を説明
するための各工程の要部拡大断面図、第７図は本
考案の他の実施例を示す要部拡大断面図である。
第８図は薄膜ELパネルの従来例を示す断面図、
第９図は第８図の要部拡大断面図、第１０図は背
面電極の断切れ状態を説明するための要部拡大断
面図である。
２０……透光性〔ガラス〕基板、２１……薄膜
EL素子、２２……透明電極、２３……第１の誘
電体層、２４……発光層、２５……第２の誘電体
層、２６……背面電極、２７，２８……端子部、
２９，３０……絶縁体。
Fig. 1 is a sectional view showing an embodiment of the thin film EL panel according to the present invention, Fig. 2 is an enlarged sectional view of the main part of Fig. 1, and Figs. 3 to 6 explain the method of forming the insulator. Fig. 7 is an enlarged sectional view of the main part showing another embodiment of the present invention.
Figure 8 is a sectional view showing a conventional example of a thin film EL panel.
FIG. 9 is an enlarged sectional view of the main part of FIG. 8, and FIG. 10 is an enlarged sectional view of the main part for explaining the disconnected state of the back electrode. 20... Transparent [glass] substrate, 21... Thin film
EL element, 22... Transparent electrode, 23... First dielectric layer, 24... Light emitting layer, 25... Second dielectric layer, 26... Back electrode, 27, 28... Terminal section,
29, 30... Insulator.
Claims (1)
発光層、第２の誘電体層及び背面電極を順次積層
してなる薄膜EL素子を形成し、上記透明電極及
び背面電極を外部に引出す端子部を透光性基板の
周辺部に形成した薄膜ELパネルにおいて、 上記薄膜EL素子の高さに、端子部の高さを略
一致させ、薄膜EL素子と端子部間に絶縁体を埋
込み形成すると共に、該絶縁体上に、薄膜EL素
子の第２の誘電体層と端子部とに跨がる背面電極
を形成したことを特徴とする薄膜ELパネル。[Claims for Utility Model Registration] On a transparent substrate, a transparent electrode, a first dielectric layer,
A thin film EL device in which a light emitting layer, a second dielectric layer, and a back electrode are sequentially laminated to form a thin film EL element, and a terminal portion for leading out the transparent electrode and the back electrode to the outside is formed on the periphery of a transparent substrate. In the panel, the height of the terminal portion is made approximately equal to the height of the thin film EL element, an insulator is embedded between the thin film EL element and the terminal portion, and a second layer of the thin film EL element is placed on the insulator. A thin film EL panel characterized in that a back electrode is formed spanning a dielectric layer and a terminal portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17622085U JPH0410616Y2 (en) | 1985-11-15 | 1985-11-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17622085U JPH0410616Y2 (en) | 1985-11-15 | 1985-11-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6284085U JPS6284085U (en) | 1987-05-28 |
| JPH0410616Y2 true JPH0410616Y2 (en) | 1992-03-16 |
Family
ID=31116255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17622085U Expired JPH0410616Y2 (en) | 1985-11-15 | 1985-11-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0410616Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4444042B2 (en) * | 2004-08-26 | 2010-03-31 | 三菱電機株式会社 | Display device |
| JP5309854B2 (en) * | 2008-10-02 | 2013-10-09 | セイコーエプソン株式会社 | Display device and electronic device |
-
1985
- 1985-11-15 JP JP17622085U patent/JPH0410616Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6284085U (en) | 1987-05-28 |
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