JPH04101393A - Electroluminescence element and manufacture thereof - Google Patents
Electroluminescence element and manufacture thereofInfo
- Publication number
- JPH04101393A JPH04101393A JP2217926A JP21792690A JPH04101393A JP H04101393 A JPH04101393 A JP H04101393A JP 2217926 A JP2217926 A JP 2217926A JP 21792690 A JP21792690 A JP 21792690A JP H04101393 A JPH04101393 A JP H04101393A
- Authority
- JP
- Japan
- Prior art keywords
- insulator layer
- ions
- nitrogen
- layer
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000005401 electroluminescence Methods 0.000 title abstract 2
- 239000012212 insulator Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 21
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims description 82
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 68
- 239000010409 thin film Substances 0.000 claims description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims description 34
- 229910052782 aluminium Inorganic materials 0.000 claims description 31
- 230000001133 acceleration Effects 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 11
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 111
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 10
- 239000005083 Zinc sulfide Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- -1 nitrogen ions Chemical class 0.000 description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、表示機器等に用いられるエレクトロルミネ
ッセンス素子とその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electroluminescent element used in display devices and the like, and a method for manufacturing the same.
従来から用いられているエレクトロルミネッセンス素子
（以下、ＥＬ素子と略す）の基本的な構造は、ガラス基
板からなる電気絶縁性基板の表面１： Ｔ Ｔ Ｏ（Ｉ
ｎｄｉｕｍ−Ｔｉｎ−Ｏｘｉｄｅ）膜からなる透明電極
か形成され、この透明電極の上に第１絶縁体層か形成さ
れる。そして、この第１絶縁体層の上にＺｎＳ 等の発
光体層と第２絶縁体層とが順次積層され、最後に第２絶
縁体層の上に高い導電性を有して低コスト、しかも第２
絶縁体層との密着力が良いアルミニウム（１）からなる
背面電極か積層される。この背面電極と透明電極との間
に高周波電源か接続される。The basic structure of a conventionally used electroluminescent device (hereinafter abbreviated as EL device) is that the surface 1 of an electrically insulating substrate made of a glass substrate is TTO (I
A transparent electrode made of a ndium-Tin-Oxide film is formed, and a first insulating layer is formed on the transparent electrode. Then, a light emitter layer such as ZnS and a second insulator layer are sequentially laminated on the first insulator layer, and finally, a light emitting layer made of ZnS or the like is laminated on top of the second insulator layer. Second
A back electrode made of aluminum (1), which has good adhesion to the insulator layer, is laminated. A high frequency power source is connected between this back electrode and the transparent electrode.
この第１絶縁体層および第２絶縁体層を構成する材料は
、比誘電率や絶縁耐圧を高くして発光体層への電界強度
を大きくしたり、発光体層に湿気や不純物が拡散して劣
化するのを防ぎ、形成か容易で低コスト等の理由により
、酸化ケイ素（ＳｉＯ２）。The materials constituting the first insulator layer and the second insulator layer have high dielectric constants and dielectric breakdown voltages to increase the electric field strength to the light emitter layer, and prevent moisture and impurities from diffusing into the light emitter layer. Silicon oxide (SiO2) is used for reasons such as prevention of thermal deterioration, ease of formation, and low cost.
窒化ケイ素（Ｓ ｉ＝Ｎ ｔ）、酸化アルミニウム（Ａ
ｊ？ ２０、）等の薄膜か単層または複層で用いられ
ている。Silicon nitride (S i = N t), aluminum oxide (A
j? It is used in thin films such as 20, ), single layer, or multiple layers.
このような構成のＥＬ素子において、発光体層の発光は
、高周波電源から高周波電圧を透明電極と背面電極との
間に印加することによりえられる。In the EL element having such a configuration, light emission from the light emitter layer is obtained by applying a high frequency voltage from a high frequency power supply between the transparent electrode and the back electrode.
この電圧により発光体層と第１絶縁体層および第２絶縁
体層との界面などにトラップされていたキャリアなとか
発光体層の発光中心に衝突し、この発光中心を励起する
。そして、この励起された発光中心が基底状態に遷移す
るときに光か放射される。この光か電気絶縁性基板を透
過して観察される。This voltage causes carriers trapped at the interface between the luminescent layer and the first and second insulating layers to collide with the luminescent center of the luminescent layer, thereby exciting the luminescent center. Light is then emitted when this excited luminescent center transitions to the ground state. This light is observed after passing through the electrically insulating substrate.
しかしながら、従来のＥＬ素子は、第１絶縁体層および
第２絶縁体層の耐候性か低いため、湿気等の影響で発光
体層か劣化し易＜ＥＬ素子自体の寿命が短い。また、背
面電極以外のＥＬ素子を構成する部分の各薄膜層の透過
光性か高いことと、背面電極の光の反射率が高いことか
ら電気絶縁性基板の表面から入射する光が、各薄膜層を
透過して背面電極で反射された後、電気絶縁基板を通過
して外部に放射されるので、この反射光か発光体層の光
と相互干渉等を起こし、発光画素と非発光画素とのコン
トラストを低下させ、比較的明るい条件の下てＥＬ素子
を使用する場合、発光体層の視認性か低下するという問
題かある。However, in the conventional EL element, since the first insulating layer and the second insulating layer have low weather resistance, the light emitting layer easily deteriorates due to the influence of moisture, etc. <The life of the EL element itself is short. In addition, the light transmittance of each thin film layer in the parts constituting the EL element other than the back electrode is high, and the light reflectance of the back electrode is high, so that the light incident from the surface of the electrically insulating substrate is After passing through the layer and being reflected by the back electrode, it passes through the electrically insulating substrate and is emitted to the outside. This reflected light causes mutual interference with the light from the light-emitting layer, causing a difference between light-emitting pixels and non-light-emitting pixels. When the EL element is used under relatively bright conditions, there is a problem in that the visibility of the light emitting layer is reduced.
この発明の第１の目的は、第１絶縁性層および第２絶縁
体層の耐候性を高めて寿命を長くする二とかてきるエレ
クトロルミネッセンス素子とその製造方法を提供するこ
とである。A first object of the present invention is to provide an electroluminescent device and a method for manufacturing the same, which improve the weather resistance of the first insulating layer and the second insulating layer and extend the life span.
この発明の第２の目的は、明るい条件の下でもコントラ
ストか低下せず、発光体層の視認性に影響を及ぼすこと
かないエレクトロルミネッセンス素子とその製造方法を
提供することである。A second object of the present invention is to provide an electroluminescent device and a method for manufacturing the same, which does not reduce the contrast even under bright conditions and does not affect the visibility of the light emitting layer.
この発明の請求項（１）のエレクトロルミネッセンス素
子は、電気絶縁性基板の上に、透明電極、第１絶縁体層
１発光体層、第２絶縁体層および背面電極を順次積層し
てなるエレクトロルミネッセンス素子において、第１絶
縁体層および第２絶縁体層が窒化アルミニウム（Ａ Ｉ
！Ｎ）薄膜により形成されていることを特徴とするもの
である。The electroluminescent device according to claim (1) of the present invention is an electroluminescent device in which a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer, and a back electrode are sequentially laminated on an electrically insulating substrate. In the luminescent device, the first insulator layer and the second insulator layer are made of aluminum nitride (A I
! N) It is characterized by being formed of a thin film.
請求項（２）のエレクトロルミネッセンス素子は、請求
項（１）記載のエレクトロルミネッセンス素子において
、第１絶縁体層および第２絶縁体層か透光性の窒化アル
ミニウム（Ａ Ｉ！Ｎ）薄膜により形成されることを特
徴とするものである。The electroluminescent device according to claim (2) is the electroluminescent device according to claim (1), wherein the first insulator layer and the second insulator layer are formed of a transparent aluminum nitride (AI!N) thin film. It is characterized by being
請求項（３）のエレクトロルミネッセンス素子は、請求
項（１）記載のエレクトロルミネッセンス素子において
、第２絶縁体層か黒色の窒化アルミニウム（Ａ Ｉ！Ｎ
）薄膜により形成されることを特徴とするものである。The electroluminescent device according to claim (3) is the electroluminescent device according to claim (1), in which the second insulating layer is made of black aluminum nitride (A I!N).
) It is characterized by being formed of a thin film.
請求項（４）のエレクトロルミネッセンス素子の製造方
法は、電気絶縁性基板の上に、透明電極、第１絶縁体層
９発光体層、第２絶縁体層および背面電極を順次積層す
るエレクトロルミネッセンス素子の製造方法において、
第１絶縁体層および第２絶縁体層が、アルミニウム（１
）の真空蒸着ト同時または交互に窒素（Ｎ）イオンを照
射して形成される窒化アルミニウム（Ａ ｆ Ｎ）薄膜
で構成されることを特徴とするものである。The method for manufacturing an electroluminescent device according to claim (4) is an electroluminescent device in which a transparent electrode, a first insulating layer 9, a light emitting layer, a second insulating layer, and a back electrode are sequentially laminated on an electrically insulating substrate. In the manufacturing method of
The first insulator layer and the second insulator layer are aluminum (1
) and irradiation with nitrogen (N) ions simultaneously or alternately.
請求項（５）のエレクトロルミネッセンス素子の製造方
法は、請求項（４）記載のエレクトロルミネッセンス素
子の製造方法において、第１絶縁体層および第２絶縁体
層を、窒素（Ｎ）イオンの加速エネルギをイオン一個当
たり２ＫｅＶ以上、５ＫｅＶ以下とし、かつ真空蒸着す
るアルミニウム（Ａｌり粒子と窒素（Ｎ）イオンの個数
比を１以上、３以下の条件で１００Å以上、５０００Å
以下の膜厚て形成した後、窒素（Ｎ）イオンの加速エネ
ルギをイオン一個当たり１０ｅＶＪＪ上、１ＫｅＶ以下
とし、かつ真空蒸着するアルミニウム（Ａｆ）ｆｆｉ子
と窒素（Ｎ）イオンの個数比を０．１以上、２以下の条
件で形成するものである。The method for manufacturing an electroluminescent device according to claim (5) is the method for manufacturing an electroluminescent device according to claim (4), in which the first insulator layer and the second insulator layer are heated by accelerating energy of nitrogen (N) ions. is 2 KeV or more and 5 KeV or less per ion, and vacuum-deposited aluminum (100 Å or more and 500 Å with the number ratio of Al particles and nitrogen (N) ions being 1 or more and 3 or less).
After forming a film with the following thickness, the acceleration energy of nitrogen (N) ions is set to 10 eVJJ per ion and 1 KeV or less per ion, and the number ratio of vacuum-deposited aluminum (Af) ions to nitrogen (N) ions is set to 0. It is formed under conditions of 1 or more and 2 or less.
請求項（６）のエレクトロルミネッセンス素子の製造方
法は、請求項（４）記載のエレクトロルミネッセンス素
子の製造方法において、第１絶縁体層を、窒素（Ｎ）イ
オンの加速エネルギをイオン一個当たり２ＫｅＶ以上、
５ＫｅＶ以下とし、かつ真空蒸着するアルミニウム（Ａ
ｆ）粒子と窒素（Ｎ）イオンの個数比を１以上、３以下
の条件で１００Å以上、５０００Å以下の膜厚て形成し
た後、窒素（Ｎ）イオンの加速エネルギをイオン一個当
たり１゜ｅＶ以上、］ＫｅＶ以下とし、かつ真空蒸着す
るアルミニウム（Ａｆ）粒子と窒素（Ｎ）イオンの個数
比をＯ，１以上、２以下の条件で形成し、第２絶縁体層
を、窒素（Ｎ）イオンの加速エネルギをイオン一個当た
り２ＫｅＶ以上、５ＫｅＶ以下とし、かつ真空蒸着する
アルミニウム（ＡＡ）粒子と窒素（Ｎ）イオンの個数比
を１以上、３以下の条件で１００Å以上、５０００Å以
下の膜厚て形成した後、窒素（Ｎ）イオンの加速エネル
ギをイオン一個当たり］０ＫｅＶ以上、２０ＫｅＶ以下
とし、かつ真空蒸着するアルミニウム（Ａｌ２）粒子と
窒素（Ｎ）イオンの個数比を１以上、３以下の条件で形
成するものである。The method for manufacturing an electroluminescent device according to claim (6) is the method for manufacturing an electroluminescent device according to claim (4), in which the first insulating layer is heated such that the acceleration energy of nitrogen (N) ions is set to 2 KeV or more per ion. ,
Aluminum (A
f) After forming a film with a thickness of 100 Å or more and 5000 Å or less under conditions where the number ratio of particles and nitrogen (N) ions is 1 or more and 3 or less, the acceleration energy of nitrogen (N) ions is set to 1° eV or more per ion. ]KeV or less, and the number ratio of aluminum (Af) particles and nitrogen (N) ions to be vacuum-deposited is O,1 or more and 2 or less, and the second insulating layer is formed with nitrogen (N) ions. A film thickness of 100 Å or more and 5000 Å or less under the conditions that the acceleration energy of After formation, the acceleration energy of nitrogen (N) ions per ion is set to 0 KeV or more and 20 KeV or less, and the number ratio of aluminum (Al2) particles to vacuum-deposited nitrogen (N) ions is 1 or more and 3 or less. It is formed by
この発明のＥＬ素子の一例を第１図に、その第１絶縁体
層および第２絶縁体層の窒化アルミニウム（Ａ ｆ Ｎ
）薄膜を形成する装置の一例を第２図に基づいて説明す
る。An example of the EL element of the present invention is shown in FIG. 1, in which aluminum nitride (A f N
) An example of an apparatus for forming a thin film will be explained based on FIG.
真空装置内（図示せず）において、ホルダ１゜にガラス
基板からなる電気絶縁性基板ｌか固定される。この電気
絶縁性基板１の表面には、あらがしめマグネトロンスパ
ッタ法やイオンブレーティング法によりＩＴＯ膜からな
る透明電極２が形成されている。そして、電気絶縁性基
板ｌの斜め下方には電子ビーム（ＥＢ）、 レーサ線
または高周波等により高温度に加熱することのできる蒸
発源８か設けられている。この蒸発源８の中には蒸発物
質となるアルミニウム（Ａｆ）８’が入れられている。In a vacuum apparatus (not shown), an electrically insulating substrate l made of a glass substrate is fixed to a holder 1°. A transparent electrode 2 made of an ITO film is formed on the surface of this electrically insulating substrate 1 by rough magnetron sputtering or ion blating. An evaporation source 8 that can be heated to a high temperature using an electron beam (EB), laser beam, high frequency, or the like is provided diagonally below the electrically insulating substrate 1. This evaporation source 8 contains aluminum (Af) 8' which becomes an evaporation substance.
また、電気絶縁性基板１に正対する方向にはカウフマン
型やプラズマを閉じ込めるためのカスブ磁場を用いたパ
ケット型等のイオン源１１か設けられている。Further, in a direction directly facing the electrically insulating substrate 1, there is provided an ion source 11 such as a Kauffman type or a packet type using a cusp magnetic field for confining plasma.
このイオン源１１は、電気絶縁性基板１に形成した透明
電極２の表面に窒素ガス（Ｎ２）をイオン化したイオン
１ビにして照射する装置である。This ion source 11 is a device that irradiates the surface of a transparent electrode 2 formed on an electrically insulating substrate 1 with nitrogen gas (N2) as ionized ions.
さらに、真空装置内には、膜厚計９とイオン電流測定器
１２とか配置されている。Further, a film thickness meter 9 and an ion current measuring device 12 are arranged within the vacuum apparatus.
この膜厚計９は、透明電極２の表面に蒸着積層されるア
ルミニウム（１）８’の膜厚ならびにアルミニウム（Ａ
ｆ）原子の粒子数を測定するためのものであり、例えば
水晶振動子を使用した水晶振動式膜厚計等である。また
、イオン電流測定器１２は、透明電極２の表面に照射さ
れるイオン１ビの窒素イオンの個数を計測するためのも
のであり、例えばファラデーカップのような２次電子抑
制電極を持つカップ型構造のイオンヒーム電流測定器等
である。This film thickness gauge 9 measures the film thickness of aluminum (1) 8' deposited on the surface of the transparent electrode 2 and the aluminum (A
f) A device for measuring the number of atomic particles, such as a quartz crystal film thickness meter using a quartz crystal oscillator. The ion current measuring device 12 is used to measure the number of nitrogen ions irradiated onto the surface of the transparent electrode 2, and is, for example, a cup type device having a secondary electron suppressing electrode such as a Faraday cup. This is a structured ion beam current measuring device, etc.
上記のような構成において、蒸発源８がらアルミニウム
（，１７） ８’を電気絶縁性基板１に形成した透明電
極２の表面に蒸着すると同時または交互にイオン源１１
から窒素ガス（Ｎ２）のイオン１１′を照射して窒化ア
ルミニウム（ＡｌＮ） （７）ｉｌｌｕ （以下、Ａ［
Ｎ薄膜と略す）を形成する。In the above configuration, the ion source 11 is simultaneously or alternately deposited from the evaporation source 8 on the surface of the transparent electrode 2 formed on the electrically insulating substrate 1 with aluminum (,17) 8'.
Aluminum nitride (AlN) (7) illu (hereinafter referred to as A[
(abbreviated as N thin film) is formed.
このとき、イオン源１１から照射されるイオン１１′の
加速エネルギの値と、形成されるＡＡＮ薄膜の中のアル
ミニウム（Ａ［）粒子と窒素のイオン１１′の個数比（
以下、ＡＩ！／Ｎ輸送比と略す）とを、膜厚計９とイオ
ン電流測定器Ｉ２とて測定制御しながら適宜調整してＡ
ＡＮ薄膜を形成する。At this time, the value of acceleration energy of ions 11' irradiated from the ion source 11 and the number ratio of aluminum (A[) particles and nitrogen ions 11' in the formed AAN thin film (
Below, AI! /N transport ratio) is appropriately adjusted while being measured and controlled using the film thickness meter 9 and the ion current measuring device I2.
Form an AN thin film.
この加速エネルギとＡＩ！／Ｎ輸送比との具体的な値は
、ＡＩ！Ｎ薄膜の形成の開始時において、イオン源】】
から照射されるイオン１１′の加速エネルギをイオン一
個当たり２ｅＶ以上、５ＫｅＶ以下とし、ＡＩ！／Ｎ輸
送比を１以上、３以下として薄膜の膜厚を１００Å以上
、５０００Å以下に形成した後、イオン１ビの加速エネ
ルギをイオン個当たり］ＯｅＶ以上、１ＫｅＶ以下とし
、ＡＩ！／Ｎ輸送比をＯ，１以上、２以下として所定膜
厚の第１絶縁体層３を形成することか好ましい。これは
、ＡｆＮｆｉ膜の形成の開始時にイオン１ビの加速エネ
ルギを２ＫｅＶ以上にすると透明電極２と、形成される
ＡＡＮ薄膜との界面に、両者の構成原子の混合層を形成
し易くなり透明電極２とＡＡＮ薄膜との密着性を高める
ためてあり、加速エネルギを５ＫｅＶ以下とするのは形
成されるＡＡＮ薄膜の内部に欠陥や損傷か発生するのを
抑えるためである。そして、Ａｌ／Ｎ輸送比を１以上、
３以下にするのは、形成されるＡｊ？Ｎ薄膜の透光性を
良くするためである。また、形成されるＡｆＮ薄膜の膜
厚が、１００人より薄いと前述の透明電極２とＩＮ薄膜
との混合層の形成状態が不十分になり密着性に劣り、５
０００人より厚いと透光性に悪影響を与えるので好まし
くない。さらにその後、イオン１１′の加速エネルギを
１ＯｅＶ以上、］ＫｅＶ以下とするのは、加速エネルギ
か１ＫｅＶを超えると、形成されるＡｉＮ薄膜の耐候性
が劣り、１０ｅＶに満たないとイオン１１′が引き出せ
ないからである。また、ＡＩ！／Ｎ輸送比を０．１以上
、２以下とするのは、形成されるＡＩ！Ｎ薄膜が緻密性
に優れ耐候性か良く、透光性に優れたＡｉＮ薄膜を形成
するためである。This acceleration energy and AI! /N transport ratio and the specific value is AI! At the beginning of the formation of the N thin film, the ion source]
The acceleration energy of the ions 11' irradiated from AI! is set to 2 eV or more and 5 KeV or less per ion, and AI! After forming a thin film with a thickness of 100 Å or more and 5000 Å or less with /N transport ratio of 1 or more and 3 or less, the acceleration energy of ion 1 Bi is set to]OeV or more and 1KeV or less per ion, and AI! It is preferable to form the first insulating layer 3 with a predetermined thickness with a /N transport ratio of O.1 or more and 2 or less. This is because if the acceleration energy of ion 1bi is set to 2 KeV or more at the start of forming the AfNfi film, it becomes easier to form a mixed layer of constituent atoms of the transparent electrode 2 and the AAN thin film to be formed at the interface between the transparent electrode 2 and the AAN thin film. The reason for setting the acceleration energy to 5 KeV or less is to suppress the occurrence of defects or damage inside the formed AAN thin film. Then, the Al/N transport ratio is 1 or more,
Is the Aj formed to be 3 or less? This is to improve the translucency of the N thin film. Furthermore, if the thickness of the AfN thin film to be formed is thinner than 100, the formation of the mixed layer of the transparent electrode 2 and the IN thin film described above will be insufficient, resulting in poor adhesion.
If it is thicker than 0.000 mm, it is not preferable because it has an adverse effect on translucency. Furthermore, after that, the acceleration energy of the ions 11' is set to 1 OeV or more and ]KeV or less, because if the acceleration energy exceeds 1 KeV, the weather resistance of the formed AiN thin film will be poor, and if it is less than 10 eV, the ions 11' will not be extracted. That's because there isn't. Also, AI! /N transport ratio is 0.1 or more and 2 or less because the formed AI! This is because the N thin film forms an AiN thin film with excellent density, good weather resistance, and excellent light transmittance.
つぎに、前述の方法により得られた第１絶縁体層３の上
に、所定濃度のマンガン（Ｍｎ）を添加した硫化亜鉛（
ＺｎＳ）等の材料を用いて真空蒸着で発光体層４を形成
する。この発光体層４の形成は、第１絶縁体層３を形成
した装置（第２図）のイオン源１１を使用せず、蒸発源
８のみを使用して形成してもよく、別の真空蒸着装置を
用いてもよい。Next, on the first insulating layer 3 obtained by the method described above, zinc sulfide (
The light emitter layer 4 is formed by vacuum deposition using a material such as ZnS). The light emitting layer 4 may be formed using only the evaporation source 8 without using the ion source 11 of the apparatus (FIG. 2) that formed the first insulator layer 3, or may be formed using a separate vacuum source. A vapor deposition device may also be used.
そしてつぎに、第１絶縁体層３を形成した装置と同し装
置（第２図）を用いて、発光体層４の上にＡＡＮ薄膜か
らなる第２絶縁体層５を形成する。Next, a second insulating layer 5 made of an AAN thin film is formed on the light emitting layer 4 using the same device (FIG. 2) as that used to form the first insulating layer 3.
この第２絶縁体層５の形成方法は、第１絶縁体層２と同
様の条件でアルミニウム（／’１．ｊ７） ８’の真空
蒸着と窒素ガス（Ｎ２）のイオン１１′の照射とを行い
ＡＩ！Ｎ薄膜の形成を開始し、第１絶縁体層３と同じく
発光体層４との密着性か良く、透光性に悪影響を与えな
し・膜厚（１００Å以上、５０００Å以下）のＡｆＮ薄
膜を形成する。つぎに、形成されるＡＩ！Ｎ薄膜か緻密
性に優れ耐候性か良く、透光性か良い第２絶縁体層５を
形成する場合には、第１絶縁体層３の形成条件と同じよ
うにイオン１１′の加速エネルギとＡｌ／Ｎ輸送比の条
件を変更して所定膜厚のＡｊ７Ｎ薄膜を形成する。一方
、形成される第２絶縁体層５を緻密性に優れ耐候性か良
い黒色のＡｆＮ薄膜を形成する場合には、イオン１１′
の加速エネルギをイオン一個当たり１０ＫｅＶ以上、２
０ＫｅＶ以下とし、Ａｌ／Ｎ輸送比を１以上、３以下と
して所定膜厚のＩＮ薄膜を形成する。The method for forming the second insulator layer 5 includes vacuum evaporation of aluminum (/'1.j7) 8' and irradiation of nitrogen gas (N2) ions 11' under the same conditions as the first insulator layer 2. Do AI! Start forming the N thin film, and form an AfN thin film with good adhesion to the light emitter layer 4 as well as the first insulator layer 3, and a film thickness (100 Å or more and 5000 Å or less) that does not adversely affect translucency. do. Next, the AI that will be formed! When forming the second insulating layer 5, which is a N thin film, has good density, good weather resistance, and good transparency, the acceleration energy of the ions 11' and the An Aj7N thin film having a predetermined thickness is formed by changing the conditions of the Al/N transport ratio. On the other hand, when forming the second insulating layer 5 to be a black AfN thin film with excellent density and good weather resistance, ions 11'
acceleration energy of 10 KeV or more per ion, 2
An IN thin film of a predetermined thickness is formed by setting the voltage to 0 KeV or less and setting the Al/N transport ratio to 1 or more and 3 or less.
そして最後に、上記の条件で形成した透明または黒色の
第２絶縁体層５の上に、真空蒸着法等の方法でアルミニ
ウム（Ａｊ’）からなる背面電極６を形成する。Finally, on the transparent or black second insulating layer 5 formed under the above conditions, a back electrode 6 made of aluminum (Aj') is formed by a method such as a vacuum evaporation method.
実施例１
第２図に示して説明した装置において、表面にＩ ｎ２
０ ｓ−３ｎｏ ２膜の透明電極２を形成したガラス基
板からなる電気絶縁基板ｌを固定する。そして、アルミ
ニウム（Ａｎ）８’を蒸発物質として蒸発源８の内部に
配置して真空装置の内部を１×１０’Ｔｏｒｒ以下の高
真空に保持し、蒸発源８を電子ヒーム（ＥＢ）で加熱し
てアルミニウム（ＡＡ）８’を透明電極２の表面に蒸着
させると同時に、イオン源１１に窒素ガス（Ｎ２）を導
入して窒素のイオン１１′を透明電極２の表面に照射し
て透明な第１絶縁体層３を形成した。Example 1 In the apparatus shown and explained in FIG.
An electrically insulating substrate l made of a glass substrate on which a transparent electrode 2 of 0 s-3no 2 film is formed is fixed. Then, aluminum (An) 8' is placed inside the evaporation source 8 as an evaporation substance, the inside of the vacuum device is maintained at a high vacuum of 1 x 10' Torr or less, and the evaporation source 8 is heated with an electron beam (EB). At the same time, nitrogen gas (N2) is introduced into the ion source 11 and nitrogen ions 11' are irradiated onto the surface of the transparent electrode 2 to deposit aluminum (AA) 8' on the surface of the transparent electrode 2. A first insulator layer 3 was formed.
このとき、イオン１１’の照射エネルギをイオン一個当
たり２ＫｅＶとし、形成されるＡｆＮ薄膜のＡＩ！／Ｎ
輸送比か１になるように、アルミニウム（ＡＡ）８’の
蒸発量とイオンＩＩ’の照射■および照射エネルギを、
膜厚計９とイオン電流測定器１２とで測定しなから制御
して膜厚か１０００人のＡｆＮ薄膜を形成した後、イオ
ン１１′の照射エネルギをイオン一個当たり］ＫｅＶ、
Ａｌ／Ｎ輸送比を１にし、最終的に膜厚か４０００人の
透明な第１絶縁体層３を形成した。At this time, the irradiation energy of the ions 11' was set to 2 KeV per ion, and the AI of the AfN thin film formed! /N
The evaporation amount of aluminum (AA) 8', the irradiation ■ of ion II' and the irradiation energy are set so that the transport ratio becomes 1.
After forming an AfN thin film with a thickness of about 1000 by measuring and controlling with the film thickness meter 9 and the ion current measuring device 12, the irradiation energy of the ions 11' was adjusted to [per ion]KeV,
The Al/N transport ratio was set to 1, and a transparent first insulating layer 3 with a final film thickness of about 4,000 layers was formed.
つぎに、この第１絶縁体層３の上に所定濃度のマンガン
（Ｍｎ）を添加した硫化亜鉛（ＺｎＳ）を用いて真空蒸
着て発光体層４を形成した後、第１の絶縁体層３の形成
と同様に、アルミニウム（Ａｆ）８′を発光体層４の表
面に蒸着させると同時に、窒素のイオン１１′を発光体
層４の表面に照射して透明な第２絶縁体層５を形成した
。Next, on this first insulating layer 3, zinc sulfide (ZnS) added with a predetermined concentration of manganese (Mn) is vacuum deposited to form a luminescent layer 4, and then the first insulating layer 3 is Similarly to the formation of the phosphor layer 4, aluminum (Af) 8' is vapor deposited on the surface of the phosphor layer 4, and at the same time, nitrogen ions 11' are irradiated onto the surface of the phosphor layer 4 to form a transparent second insulator layer 5. Formed.
このとき、イオン１１′の照射エネルギをイオン一個当
たり２ＫｅＶとし、形成されるＡＡＮ薄膜のＡｌ／Ｎ輸
送比が１になるように、アルミニウム（Ａｎ）８’の蒸
発量とイオン１１′の照射量および照射エネルギを、測
定制御しなから膜厚か１０００人のＡ［Ｎ薄膜を形成し
た後、イオン１１′の照射エネルギをイオン一個当たり
３ＫｅＶ、Ａｌ／Ｎ輸送比を１に変更し、最終的に膜厚
か５０００人の透明な第２絶縁体層５を形成した。At this time, the irradiation energy of ions 11' was set to 2 KeV per ion, and the evaporation amount of aluminum (An) 8' and the irradiation amount of ions 11' were adjusted so that the Al/N transport ratio of the formed AAN thin film was 1. After forming an A[N thin film with a film thickness of 1,000 people without measuring and controlling the irradiation energy, the irradiation energy of ions 11' was changed to 3 KeV per ion, the Al/N transport ratio was changed to 1, and the final A transparent second insulating layer 5 having a thickness of approximately 5,000 wafers was formed.
最後に、透明な第２絶縁体層５の上にアルミニウム（Ａ
ｆ）を真空蒸着して背面電極６を形成してＥＬ素子を製
造した。Finally, aluminum (A
f) was vacuum-deposited to form a back electrode 6, and an EL device was manufactured.
このようにして、ＥＬ素子の第１絶縁体層３および第２
絶縁体層５をＡｊ’Ｎ薄膜で緻密に構成することにより
、不純物の水素等か混入すことかなく、耐候性や透光性
か向上する。また、このＡｊ２Ｎ薄膜は、発光体層４と
同し六方晶系の結晶構造であるので、各界面の混合層で
の相性かよく、発光効率か向上する。さらに、ＡＩＮ薄
膜は、自己回復モードを有する材料なので、絶縁破壊か
生しても破壊伝播モートを有する例えばＰｂＴｉＣＬ薄
膜のように、画素全体に破壊か伝播して非発光部か認め
られるという現象を生しない。In this way, the first insulator layer 3 and the second insulator layer of the EL element are
By forming the insulator layer 5 with a dense Aj'N thin film, impurities such as hydrogen are not mixed in, and the weather resistance and light transmittance are improved. Furthermore, since this Aj2N thin film has the same hexagonal crystal structure as the light emitting layer 4, it has good compatibility in the mixed layer at each interface and improves luminous efficiency. Furthermore, since the AIN thin film is a material that has a self-healing mode, even if dielectric breakdown occurs, it does not have a breakdown propagation mode, such as a PbTiCL thin film, where the breakdown propagates throughout the pixel and is recognized as a non-light-emitting area. Not alive.
実施例２
実施例１と同様に電気絶縁基板１に形成した透明電極２
の表面に、アルミニウム（八β）８′を蒸着させると同
時に、窒素のイオン１１′の照射エネルギを２ Ｋ ｅ
Ｖ、 Ａ Ｉ ／ Ｎ ＋Ｑ ；！比を１として腔厚か
１０００人のＡ Ｉ Ｎ ＲＬを形成し、イオン＋１’
の照射エネルギを０．５ＫｅＶ、Ａ Ｉ ／ Ｎ ｔＡ
送比を１にし、最終的に膜厚か４０００人の透明な第１
絶縁体層３を形成した後、この第１絶縁体層３の上に真
空蒸着て発光体層４を形成した。Example 2 Transparent electrode 2 formed on electrically insulating substrate 1 in the same manner as Example 1
At the same time, the irradiation energy of nitrogen ions 11' was 2 K e
V, AI/N +Q ;! Form an A I N RL with a cavity thickness of 1000 people with a ratio of 1, and ions +1'
irradiation energy of 0.5KeV, A I / N tA
The feed ratio was set to 1, and the final film thickness was 4000 people.
After forming the insulator layer 3, the luminescent layer 4 was formed on the first insulator layer 3 by vacuum deposition.
つぎに、アルミニウム（Ａ［）を発光体層４の表面に蒸
着させると同時に、窒素のイオン１１′を発光体層４の
表面に照射して黒色の第２絶縁体層５を形成した。Next, aluminum (A[) was vapor-deposited on the surface of the luminescent layer 4, and at the same time, the surface of the luminescent layer 4 was irradiated with nitrogen ions 11' to form a black second insulating layer 5.
このとき、イオン１１′の照射エネルギを２ＫｅＶ、Ａ
Ｉ！／Ｎ輸送比を１として膜厚が１０００人のＡＩＮ薄
膜を形成した後、イオン１１′の照射エネルギをｌ０Ｋ
ｅＶ、ＡＩ！／Ｎ輸送比を１に変更し、最終的に膜厚が
５０００人の黒色の第２絶縁体層５を形成した。At this time, the irradiation energy of the ions 11' was set to 2KeV, A
I! After forming an AIN thin film with a film thickness of 1000 with a /N transport ratio of 1, the irradiation energy of ions 11' was set to 10K.
eV, AI! /N transport ratio was changed to 1, and a black second insulator layer 5 with a final film thickness of 5,000 layers was formed.
最後に、この第２絶縁体層５の上にアルミニウム（Ａ［
）を真空蒸着して背面電極６を形成してＥＬ素子を製造
した。Finally, aluminum (A [
) was vacuum-deposited to form the back electrode 6, and an EL device was manufactured.
このようにして、ＥＬ素子の第１絶縁体層３および第２
絶縁体層５に、不純物の水素等か混入することなく、Ａ
ＩＮ薄膜で緻密に構成するので、耐候性か向上し、各界
面の混合層での相性かよく、発光効率か向上する。また
、ＡＡＮ薄膜は、自己回復モードを有する材料なので、
絶縁破壊か生しても画素全体に破壊か伝播して非発光部
か認められるという現象を生しない。In this way, the first insulator layer 3 and the second insulator layer of the EL element are
A without mixing impurities such as hydrogen into the insulator layer 5.
Since it is densely composed of an IN thin film, weather resistance is improved, compatibility in the mixed layer at each interface is good, and luminous efficiency is improved. In addition, since the AAN thin film is a material that has a self-healing mode,
Even if dielectric breakdown occurs, the breakdown or propagation throughout the pixel does not occur, causing a phenomenon in which a non-light-emitting portion is recognized.
さらに、第２絶縁体層５を黒色のＡＡＮ薄膜とすること
により、背面電極６による反射光の影響をなくして円偏
光フィルタを配置したときと同様に、発光画素自体の輝
度を低下させずにコントラストを向上することかできる
。Furthermore, by making the second insulator layer 5 a black AAN thin film, the influence of reflected light from the back electrode 6 is eliminated, and the brightness of the light emitting pixel itself is not reduced, similar to when a circularly polarizing filter is disposed. It is possible to improve the contrast.
この発明の請求項（１）のエレクトロルミネッセンス素
子は、第１絶縁体層および第２絶縁体層を不純物を含有
せず、緻密な窒化アルミニウム（ＡＡＮ）薄膜で形成す
るので、耐候性を良くして寿命を長くすることかできる
。また、透明電極および発光体層との密着性を良くして
発光効率を高める。The electroluminescent device according to claim (1) of the present invention has good weather resistance because the first insulating layer and the second insulating layer are formed of a dense aluminum nitride (AAN) thin film without containing impurities. It is possible to extend the lifespan. In addition, it improves the adhesion between the transparent electrode and the luminescent layer to increase luminous efficiency.
請求項（２）のエレクトロルミネッセンス素子は、第１
絶縁体層および第２絶縁体層を透光性に優れた透明な窒
化アルミニウム（Ａ Ａ Ｎ）薄膜で形成するので、耐
候性を良くすることかできる。The electroluminescent device according to claim (2) comprises a first
Since the insulator layer and the second insulator layer are formed of a transparent aluminum nitride (AAN) thin film with excellent light transmission, weather resistance can be improved.
請求項（３）のエレクトロルミネッセンス素子は、第１
絶縁体層を透明の窒化アルミニウム（Ａ ｆ Ｎ）薄膜
で形成し、第２絶縁体層を黒色の窒化アルミニウム（Ａ
Ｉ！Ｎ）薄膜て形成するので、背面電極による反射光
の影響をなくし、コントラストを低下させることかない
。The electroluminescent device according to claim (3) comprises a first
The insulator layer is made of a transparent aluminum nitride (A f N) thin film, and the second insulator layer is made of black aluminum nitride (A f N).
I! N) Since it is formed as a thin film, the influence of reflected light from the back electrode is eliminated and contrast does not deteriorate.
請求項（４）のエレクトロルミネッセンス素子の製造方
法は、第１絶縁体層および第２絶縁体層を、アルミニウ
ム（Ａ、ｊ’）の真空蒸着と同時または交互に窒素（Ｎ
）イオンを照射し、窒化アルミニウム（Ａ Ｉ！Ｎ）薄
膜で構成するので、第１絶縁体層および第２絶縁体層か
不純物を含有せず、緻密にすることができる。In the method for manufacturing an electroluminescent device according to claim (4), the first insulator layer and the second insulator layer are formed by nitrogen (N
) Since the first insulating layer and the second insulating layer are irradiated with ions and made of an aluminum nitride (AI!N) thin film, the first insulating layer and the second insulating layer do not contain impurities and can be made dense.
請求項（５）のエレクトロルミネッセンス素子の製造方
法は、第１絶縁体層および第２絶縁体層を、窒素（Ｎ）
のイオンの加速エネルギをイオン一個当たり２ＫｅＶ以
上、５ＫｅＶ以下とし、ＡＩ２／Ｎ輸送比を１以上、３
以下で１００Å以上、５０００Å以下形成した後、加速
エネルギを１０ｅＶ以上、］ＫｅＶ以下、Ａｌ／Ｎ輸送
比を０．１以上、２以下に変更して形成するので、透光
性のよい透明の窒化アルミニウム（ＩＮ）薄膜からなる
第１絶縁体層および第２絶縁体層とすることかできる。In the method for manufacturing an electroluminescent device according to claim (5), the first insulator layer and the second insulator layer are made of nitrogen (N).
The acceleration energy of the ions is 2 KeV or more and 5 KeV or less per ion, and the AI2/N transport ratio is 1 or more and 3
After forming a layer with a thickness of 100 Å or more and 5000 Å or less, the acceleration energy is changed to 10 eV or more, ]KeV or less, and the Al/N transport ratio is changed to 0.1 or more and 2 or less. The first insulator layer and the second insulator layer may be made of aluminum (IN) thin film.
請求項（６）のエレクトロルミネッセンス素子の製造方
法は、第２絶縁体層を、窒素（Ｎ）のイオンの加速エネ
ルギをイオン一個当たり２ＫｅＶ以上、５ＫｅＶ以下と
し、Ａｌ／Ｎ輸送比を１以上、３以下で１００Å以上、
５０００Å以下形成した後、加速エネルギを１０ＫｅＶ
以上、２０ＫｅＶ以下、Ａｌ／Ｎ輸送比を１以上、３以
下に変更して形成するので、黒色の窒化アルミニウム（
Ａ ｆ Ｎ）薄膜からなる第２絶縁体層とすることかで
きる。In the method for manufacturing an electroluminescent device according to claim (6), the second insulating layer has a nitrogen (N) ion acceleration energy of 2 KeV or more and 5 KeV or less per ion, an Al/N transport ratio of 1 or more, 3 or less and 100Å or more,
After forming 5000 Å or less, the acceleration energy is set to 10 KeV.
As mentioned above, black aluminum nitride (
The second insulating layer may be a thin film (A f N).
第１図はこの発明の一実施例のエレクトロルミネッセン
ス素子の縦断面図、第２図はその製造装置の一例を説明
する概略図である。
１・・・電気絶縁基板、２・・・透明電極、３・・・第
１絶縁体操、４・・・発光体層、５・・・第２絶縁体層
、６・・・背面電極、７・・・高周波電源、８′・・・
アルミニウム（Ａｆ）、１１′・・・イオン
特許出願人 日新電機株式会社
代理 人 弁理士 官井暎夫FIG. 1 is a longitudinal sectional view of an electroluminescent device according to an embodiment of the present invention, and FIG. 2 is a schematic diagram illustrating an example of a manufacturing apparatus thereof. DESCRIPTION OF SYMBOLS 1... Electrical insulating substrate, 2... Transparent electrode, 3... First insulating layer, 4... Luminous layer, 5... Second insulator layer, 6... Back electrode, 7 ...High frequency power supply, 8'...
Aluminum (Af), 11'...Ion patent applicant Nissin Electric Co., Ltd. agent Patent attorney Akio Kanai
Claims (6)
，発光体層，第２絶縁体層および背面電極を順次積層し
てなるエレクトロルミネッセンス素子において、前記第
１絶縁体層および第２絶縁体層が窒化アルミニウム（Ａ
ｌＮ）薄膜により形成されていることを特徴とするエレ
クトロルミネッセンス素子。(1) In an electroluminescent device in which a transparent electrode, a first insulator layer, a luminescent layer, a second insulator layer, and a back electrode are sequentially laminated on an electrically insulating substrate, the first insulator layer and The second insulator layer is aluminum nitride (A
1N) An electroluminescent element characterized by being formed of a thin film.
アルミニウム（ＡｌＮ）薄膜により形成されている請求
項（１）記載のエレクトロルミネッセンス素子。(2) The electroluminescent device according to claim 1, wherein the first insulator layer and the second insulator layer are formed of a transparent aluminum nitride (AlN) thin film.
）薄膜により形成されている請求項（１）記載のエレク
トロルミネッセンス素子。(3) The second insulator layer is black aluminum nitride (AlN).
2.) The electroluminescent device according to claim 1, wherein the electroluminescent device is formed of a thin film.
，発光体層，第２絶縁体層および背面電極を順次積層す
るエレクトロルミネッセンス素子の製造方法において、
前記第１絶縁体層および第２絶縁体層が、アルミニウム
（Ａｌ）の真空蒸着と同時または交互に窒素（Ｎ）イオ
ンを照射して形成される窒化アルミニウム（ＡｌＮ）薄
膜で構成されることを特徴とするエレクトロルミネッセ
ンス素子の製造方法。(4) A method for manufacturing an electroluminescent device in which a transparent electrode, a first insulating layer, a light emitter layer, a second insulating layer and a back electrode are sequentially laminated on an electrically insulating substrate,
The first insulator layer and the second insulator layer are formed of an aluminum nitride (AlN) thin film formed by irradiating nitrogen (N) ions simultaneously or alternately with vacuum evaporation of aluminum (Al). A method for manufacturing a featured electroluminescent device.
イオンの加速エネルギをイオン一個当たり２ＫｅＶ以上
、５ＫｅＶ以下とし、かつ真空蒸着するアルミニウム（
Ａｌ）粒子と窒素（Ｎ）イオンの個数比を１以上、３以
下の条件で１００Å以上、５０００Å以下の膜厚で形成
した後、窒素（Ｎ）イオンの加速エネルギをイオン一個
当たり１０ｅＶ以上、１ＫｅＶ以下とし、かつ真空蒸着
するアルミニウム（Ａｌ）粒子と窒素（Ｎ）イオンの個
数比を０．１以上、２以下の条件で形成する請求項（４
）記載のエレクトロルミネッセンス素子の製造方法。(5) The first insulator layer and the second insulator layer are made of nitrogen (N).
The ion acceleration energy is 2 KeV or more and 5 KeV or less per ion, and aluminum (
After forming a film with a thickness of 100 Å or more and 5000 Å or less under conditions where the number ratio of Al) particles and nitrogen (N) ions is 1 or more and 3 or less, the acceleration energy of nitrogen (N) ions is set to 10 eV or more and 1 KeV per ion. Claim (4) wherein the number ratio of aluminum (Al) particles and nitrogen (N) ions to be vacuum-deposited is 0.1 or more and 2 or less.
) A method for manufacturing an electroluminescent device according to the method.
ギをイオン一個当たり２ＫｅＶ以上、５ＫｅＶ以下とし
、かつ真空蒸着するアルミニウム（Ａｌ）粒子と窒素（
Ｎ）イオンの個数比を１以上、３以下の条件で１０Å以
上、５０００Å以下の膜厚で形成した後、窒素（Ｎ）イ
オンの加速エネルギをイオン一個当たり１０ｅＶ以上、
１ＫｅＶ以下とし、かつ真空蒸着するアルミニウム（Ａ
ｌ）粒子と窒素（Ｎ）イオンの個数比を０．１以上、２
以下の条件で形成し、 第２絶縁体層を、窒素（Ｎ）イオンの加速エネルギを
イオン一個当たり２ＫｅＶ以上、５ＫｅＶ以下とし、か
つ真空蒸着するアルミニウム（Ａｌ）粒子と窒素（Ｎ）
イオンの個数比を１以上、３以下の条件で１００Å以上
、５０００Å以下の膜厚で形成した後、窒素（Ｎ）イオ
ンの加速エネルギをイオン一個当たり１０ＫｅＶ以上、
２０ＫｅＶ以下とし、かつ真空蒸着するアルミニウム（
Ａｌ）粒子と窒素（Ｎ）イオンの個数比を１以上、３以
下の条件で形成する請求項（４）記載のエレクトロルミ
ネッセンス素子の製造方法。(6) The first insulator layer is formed by setting the acceleration energy of nitrogen (N) ions to 2 KeV or more and 5 KeV or less per ion, and vacuum-depositing aluminum (Al) particles and nitrogen (
N) After forming a film with a thickness of 10 Å or more and 5000 Å or less under the conditions that the number ratio of ions is 1 or more and 3 or less, the acceleration energy of nitrogen (N) ions is set to 10 eV or more per ion,
Aluminum (A
l) The number ratio of particles and nitrogen (N) ions is 0.1 or more, 2
The second insulating layer is formed under the following conditions, the acceleration energy of nitrogen (N) ions is set to 2 KeV or more and 5 KeV or less per ion, and aluminum (Al) particles and nitrogen (N) are vacuum-deposited.
After forming a film with a thickness of 100 Å or more and 5000 Å or less under the conditions that the number ratio of ions is 1 or more and 3 or less, the acceleration energy of nitrogen (N) ions is set to 10 KeV or more per ion,
Aluminum (20 KeV or less and vacuum evaporated)
5. The method for manufacturing an electroluminescent device according to claim 4, wherein the number ratio of Al) particles to nitrogen (N) ions is 1 or more and 3 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2217926A JP2819804B2 (en) | 1990-08-17 | 1990-08-17 | Electroluminescence device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2217926A JP2819804B2 (en) | 1990-08-17 | 1990-08-17 | Electroluminescence device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04101393A true JPH04101393A (en) | 1992-04-02 |
| JP2819804B2 JP2819804B2 (en) | 1998-11-05 |
Family
ID=16711892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2217926A Expired - Fee Related JP2819804B2 (en) | 1990-08-17 | 1990-08-17 | Electroluminescence device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2819804B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015057786A (en) * | 2007-04-30 | 2015-03-26 | アイファイアー・アイピー・コーポレーション | Laminated thick film dielectric structure for thick film dielectric electroluminescent display |
-
1990
- 1990-08-17 JP JP2217926A patent/JP2819804B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015057786A (en) * | 2007-04-30 | 2015-03-26 | アイファイアー・アイピー・コーポレーション | Laminated thick film dielectric structure for thick film dielectric electroluminescent display |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2819804B2 (en) | 1998-11-05 |
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