JPH04100255A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To perform a separation of a flattened thin film with good controllability by a method wherein the thin film is made to separate from a flattened surface by the pressure of gas, which is injected through gas injection holes formed in the flattened surface. CONSTITUTION:A flattened surface 4 is formed on the upper wall part, which is a boundary wall 1a of a device main body 1, of a working chamber 2 and electrodes 5 are provided in a control chamber 3 in close proximity to the surface 4. Gas injection holes 7a and through holes 7b are formed in the wall 1a and the surface 4. A power supply 6 is made to invert and after a flattened thin film 11 is caused an electrostatic induction positively or reversely, negatively, the power supply is cut off and while inert gas is made to inject from gas pipes 9 to the film 11 by controlling gas cocks 8, the thin film 11 is pressed. In such a way, a pressure is applied to the thin film 11 made an electrostatic suction to the surface 4 by gas, which is injected through the holes 7a, and a pressing member 10 projecting in the chamber 2 through the holes 7b and the thin film 11 is made to separate from the surface 4.

Description

[Detailed Description of the Invention] [Summary] An object of the present invention is to provide a semiconductor manufacturing apparatus having electrostatic chucking that can detach a flattened thin film with good controllability, and which includes a processing chamber and a control room. a flattened surface formed by flattening the insulating member on the upper wall portion of the processing chamber; and an electrode provided in the control chamber near the flattened surface; A semiconductor manufacturing apparatus comprising: a gas ejection hole formed in the planarization surface and a gas connected to the gas ejection hole; and an insulating member configured to separate the flattened thin film from the flattened surface by the pressure of the gas jetted from the gas jetting hole, or an insulating member forming a processing chamber and a control chamber; A flattened surface formed by flattening the insulating member on the upper wall portion of the chamber;
an electrode provided in the control chamber in the vicinity of the planarized surface, and a semiconductor manufacturing apparatus that electrostatically attracts a planarized thin film to the planarized surface by electrostatic induction by the electrode, the planarized surface a through hole formed in the through hole, and a pressure member that reciprocates in the vertical direction within the through hole, and the flattened thin film is separated from the flattened surface by the pressure of the pressure member against the flattened thin film. or an insulating member forming a processing chamber and a control chamber, a flattened surface formed by flattening the insulating member on an upper wall portion of the processing chamber, and a portion adjacent to the flattened surface. an electrode provided in the control chamber so as to
in a semiconductor manufacturing apparatus that electrostatically attracts a planarized thin film to the planarized surface by electrostatic induction by the electrode, a gas ejection hole and a through hole formed in the planarized surface, and a gas ejection hole and a through hole connected to the gas ejection hole. and a pressure member that reciprocates in the vertical direction within the through hole, and the pressure of the gas ejected from the gas ejection hole and the pressure of the pressure member against the flattened thin film are provided. The flattening thin film is configured to be separated from the flattened surface.

[Industrial application field]

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus using electrostatic chucking, which allows detachment of a flattened thin film with good controllability.

Generally, mechanical chucking is used to physically hold down and support the workpiece as a chucking method for fixing the workpiece to a processing table, etc., but if the workpiece is small or the workpiece is damaged by the physical support. Vacuum chucking, electrostatic chucking, etc. are used in cases where it is susceptible to damage. In particular, electrostatic chuffing is effective for supporting Si wafers in the initial process of semiconductor manufacturing, and recently there has been a demand for an electrostatic chucking method that can detach Si wafers with good controllability.

[Conventional technology]

FIG. 4 is a schematic cross-sectional view of a conventional electrostatic chucking device used in semiconductor manufacturing.

In FIG. 4, reference numeral 31 denotes an apparatus main body made of ceramics such as alumina, and the apparatus main body 31 has a low-pressure processing chamber 32, which has a flat upper part for sample adsorption. A converted surface 33 is formed. Further, the electrode 34 is provided near the flattened surface 33,
Furthermore, a power source 35 for inducing charges in the electrode 34 is provided outside the low-pressure processing chamber 32 . 36 is a flattened thin film such as a Si wafer, and inside the flattened thin film 36, a power supply 35 is connected.
Because electrostatic induction occurs due to charges induced in the electrode 34 by, for example, the IKVO applied voltage, the flattening thin film 36 is electrostatically attracted to the electrode 34. At this time, the electrostatic adsorption force (F
) is the following formula % formula % Here, ε is the dielectric constant of the insulator (flattened thin film), ■ is the applied voltage, d is the thickness of the insulator (flattened thin film), and S is the electrode area.

Such a conventional electrostatic chucking device has the advantage that it can relatively easily obtain a high electrostatic adsorption force, and has a large heat resistance effect against heat propagated to the device body 31 due to annealing of the flattening thin film 36, etc. There is.

[Problems to be Solved by the Invention] However, in such a conventional ceramic electrostatic chaffing device, the electric resistance of the flattening thin film 36 adsorbed to the flattening surface 33 is high due to impurity implantation or annealing. If a reverse applied voltage is applied to the electrode 34, the flattening thin film 36 will be electrostatically induced due to the movement of free electrons inside the flattening thin film 36, or this applied voltage will be If it is set to 0, the electrostatically induced charge of the flattening thin film 36 causes dielectric polarization in the ceramics of the device main body 31 near the electrode 34. As a result, the flattened surface 33
Then, the electrostatic adsorption force of the planarizing thin film 36 may not weaken, and there is a problem that it is difficult to electrically separate the planarizing thin film 36, that is, it is difficult to control the detachment of the planarizing thin film 36.

For this reason, a method of detaching the flattening thin film 36 by applying physical force may be considered, but this poses the problem of easily damaging the flattening thin film 36. Although it is possible to consider a method in which the particles are absorbed by the particles to make them electrically neutral and then released, problems arise such as the characteristics of the flattening thin film 36 tending to deteriorate.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor manufacturing apparatus having electrostatic chaffing that can perform detachment of a flattened thin film with good controllability.

[Means to solve the problem]

In order to achieve the above object, the semiconductor manufacturing apparatus according to the present invention includes an insulating member forming a processing chamber for film formation, etching, etc. and a control chamber for controlling electrostatic adsorption, etc., and the insulating member on the upper wall of the processing chamber. A flattened surface formed by flattening;
an electrode provided in the control chamber in the vicinity of the planarized surface, and a semiconductor manufacturing apparatus that electrostatically attracts a planarized thin film to the planarized surface by electrostatic induction by the electrode, the planarized surface a gas ejection hole formed in the gas ejection hole and a gas pipe connected to the gas ejection hole, and the flattening thin film is detached from the flattened surface by the pressure of the gas ejected from the gas ejection hole; an insulating member forming a processing chamber for film formation, etching, etc. and a control chamber for controlling electrostatic adsorption, etc., and a flattened surface formed by flattening the insulating member on the upper wall portion of the processing chamber; an electrode provided in the control chamber in the vicinity of the planarized surface, and a semiconductor manufacturing apparatus that electrostatically attracts a planarized thin film to the planarized surface by electrostatic induction by the electrode, the planarized surface a through hole formed in the through hole, and a pressure member that reciprocates in the vertical direction within the through hole, and the flattened thin film is separated from the flattened surface by the pressure of the pressure member against the flattened thin film. Or, an insulating member forming a processing chamber for film formation, etching, etc. and a control chamber for controlling electrostatic adsorption, etc., and a flattening formed by flattening the insulating member on the upper wall portion of the processing chamber. and an electrode provided in the control chamber in the vicinity of the planarization surface, in which a planarization thin film is electrostatically attracted to the planarization surface by electrostatic induction by the electrode. A gas ejection hole and a through hole formed in the flattened surface, a gas pipe connected to the gas ejection hole, and a pressure member that reciprocates in the up and down direction within the through hole are provided, and from the gas ejection hole The flattening thin film is separated from the flattening surface by the pressure of the ejected gas and the pressure of the pressure member against the flattening thin film.

[Effect]

In the present invention, the flattened surface 4 is heated by the gas jetted from the gas jet lower a formed on the flattened surface 4 or by the pressurizing member 10 protruding into the processing chamber 2 from the through die 7b formed on the flattened surface 4. Pressure is applied to the electrostatically attracted flattened thin film 11. For this reason, the gas or pressure member 1
When the upward force increases, the flattening thin film 11 is separated from the flattening surface 4.

〔Example〕

Hereinafter, the present invention will be explained based on the drawings. 1 to 3 are diagrams showing one embodiment of the semiconductor manufacturing apparatus according to the present invention, in which FIG. 1 is a diagram showing a schematic cross section thereof, FIG. 2 is a diagram showing a planarized surface thereof, and FIG. It is a diagram showing the power supply control circuit. Note that the illustrated semiconductor manufacturing apparatus shows the main part of an electrostatic chucking apparatus, and can be applied to, for example, a CVD apparatus.

First, the configuration will be explained.

In FIG. 1, reference numeral 1 denotes an apparatus main body made of ceramics such as alumina, and the apparatus main body 1 includes a low-pressure processing chamber 2 for film formation, etching, etc., and a control chamber 3 for controlling electrostatic adsorption, etc.
form each. A flattened surface 4 is formed on the boundary wall 1a of the apparatus main body 1 by flattening the upper wall portion of the processing chamber 2. Inside the control chamber 3, an electrode 5 is provided so as to be in contact with the boundary wall 1a and close to the flattened surface 4, and a power source 6 for inducing charges in the electrode 5 is provided. Furthermore, gas ejection holes 7a and through holes 7b are formed in the boundary wall 1a and the flattened surface 4. A gas pipe 9 having a gas cock 8 is connected to the gas ejection hole 7a, and a pressurizing member 10 is connected to the through hole 7b so as to reciprocate in the vertical direction inside the through hole 7b and project into the processing chamber 2. (Figure 2). At this time, in order to uniformly arrange the gas ejection holes 7a and the through holes 7b over the entire surface of the flattened surface 4, the gas ejection holes 7a or the through holes are 7b may be formed, and 11 is a flattened thin film such as a Si wafer, and inside the flattened thin film 11, electrostatic induction occurs due to charges induced in the electrode 5 by an applied voltage of, for example, 1000 V from the power supply 6. Because of this, the flattening thin film 11
is electrostatically attracted upward to the flattened surface 4 in a state where the pressure member 10 does not protrude into the processing chamber 2.

Next, the effect will be explained.

In this embodiment, the flattening thin film 11 is removed from the flattened surface 4 based on the following steps.

First, the power supply 6 is reversed by the power supply control circuit shown in FIG. 3 to cause electrostatic induction in the flattening thin film 11 in the positive and negative directions, and then the power is turned off. Next, an inert gas such as N2 is injected from the gas pipe 9 against the flattening thin film 11 at a pressure of, for example, 760 Torr by adjusting the gas cock 8.
The maximum stress that occurs when a force of kgf/cd is applied is the flattening f! The flattening thin film 11 is pressed under conditions such that the shear breaking force of the film 11 is not exceeded.

However, h is the thickness of the flattening thin film 11, and a is the thickness of the flattening thin film 11.
, and if σ (shear breaking force of flattened thin film 11) = 700 kgf/ciil ν (Poisson's ratio) = 0.3, then P < 0.0425 kgf /
c (in the case of 6φ). That is, the flattening thin film 1
The pressing member 10 is pressed against the flattening thin film 11 with a pressure that does not cause damage or characteristic deterioration of the flattening thin film 11. However, in this case, it is extremely difficult to adjust the pressure of the pressurizing member 10 using, for example, a regulator, so the pressure of the inert gas is adjusted using the gas cock 8, and the pressure of the pressurizing member 10 is minimized. . Through the above steps, the planarized thin film 1
If 1 does not separate from the flattened surface 4, the above steps are repeated several times.

In the above process, after the electrostatic adsorption force is slightly weakened by turning off the power after the power is reversed, the gas ejected from the gas ejection hole 7a and the pressurizing member 10 protruding into the processing chamber 2 from the through hole 7b Pressure is applied to the flattening thin film 11 electrostatically attracted to the flattening surface 4. Therefore, when the upward force exerted by the gas or the pressurizing member 10 becomes larger than the downward electrostatic adsorption force applied to the flattening thin film 11, the flattening thin film 11 is separated from the flattening surface 4.

In this embodiment, the gas ejection holes 7a and the through holes 7b are provided in the boundary wall 1a and the flattened surface 4, and a downward force is applied to the flattened thin film 11 by the inert gas and the pressurizing member 10. Therefore, the planarizing thin film 11 can be easily and reliably removed from the planarizing surface 4, that is, with good controllability.

In addition, in this example, the flattening thin W! 11 from the flattened surface 4 using the inert gas from the gas outlet 7a and the pressurizing member 10 from the through hole 7b. The pressing member 10 from 7b may be used alone.

〔Effect of the invention〕

According to the present invention, there is an effect that detachment of the planarizing thin film can be performed with good controllability.

Fig. 2 is a diagram showing a flattened surface of one embodiment, Fig. 3 is a diagram showing a power supply control circuit of one embodiment, and Fig. 4 is a diagram showing a schematic cross section of a conventional example of an electrostatic chucking device. be.

1... Device main body, 2...Low pressure processing room, 3... Control room, 4... Flattened surface, 5... Electrode, 7a... Gas outlet, 7b...through hole, 10...pressure member, 11... Flattening thin film.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a schematic cross section of one embodiment of a semiconductor manufacturing apparatus according to the present invention, and a diagram showing a planarized surface of one embodiment.

Claims (3)

[Claims] (1) An insulating member (1) forming a processing chamber (2) and a control room (3), and an insulating member (1) on the upper wall of the processing chamber (2).
Flattened surface (4) formed by flattening 1)
and the control chamber (3) in the vicinity of the flattened surface (4).
an electrode (5) provided within the flattened surface (4), and the flattened thin film (11) is moved by electrostatic induction by the electrode (5) to the flattened surface (4).
In a semiconductor manufacturing apparatus for electrostatic adsorption, a gas ejection hole (7a) formed in the flattened surface (4) and a gas pipe (9) connected to the gas ejection hole (7a) are provided, A semiconductor manufacturing apparatus characterized in that the flattening thin film (11) is separated from the flattening surface (4) by the pressure of gas jetted from the gas jetting hole (7a). (2) An insulating member (1) forming the processing chamber (2) and a control room (3), and the insulating member (1) on the upper wall of the processing chamber (2).
Flattened surface (4) formed by flattening 1)
and the control chamber (3) in the vicinity of the flattened surface (4).
an electrode (5) provided within the flattened surface (4), and the flattened thin film (11) is moved by electrostatic induction by the electrode (5) to the flattened surface (4).
In a semiconductor manufacturing apparatus in which a through hole (7b) is formed in the planarized surface (4) and a through hole (7b)
) is provided, and the pressure member (10) reciprocates in the vertical direction within the flattened thin film (11) by pressing the flattened thin film (11) from the flattened surface (4). 11
) is removed from the semiconductor manufacturing equipment. (3) An insulating member (1) forming the processing chamber (2) and a control room (3), and the insulating member (1) on the upper wall of the processing chamber (2).
Flattened surface (4) formed by flattening 1)
and the control chamber (3) in the vicinity of the flattened surface (4).
an electrode (5) provided within the flattened surface (4), and the flattened thin film (11) is moved by electrostatic induction by the electrode (5) to the flattened surface (4).
In a semiconductor manufacturing apparatus that electrostatically attracts the gas to the flattened surface (4), a gas jet hole (7a) and a through hole (7b) formed in the flattened surface (4), and a gas jet hole (7a) formed in the flattened surface (4).
The gas pipe (9) connected to the through hole (7b) and the pressurizing member (10) reciprocating in the vertical direction are provided, and the pressure of the gas ejected from the gas ejection hole (7a) is provided. A semiconductor manufacturing apparatus characterized in that the flattening thin film (11) is separated from the flattening surface (4) by pressing the flattening thin film (11) with the pressure member (10).