JP2000200825A - Substrate removal control method of vacuum treatment apparatus and vacuum treatment apparatus - Google Patents
Substrate removal control method of vacuum treatment apparatus and vacuum treatment apparatusInfo
- Publication number
- JP2000200825A JP2000200825A JP11001931A JP193199A JP2000200825A JP 2000200825 A JP2000200825 A JP 2000200825A JP 11001931 A JP11001931 A JP 11001931A JP 193199 A JP193199 A JP 193199A JP 2000200825 A JP2000200825 A JP 2000200825A
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- substrate
- processed
- heat transfer
- holding table
- transfer gas
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子、液晶
ディスプレイパネル或いは太陽電池などの製造に際し
て、被処理基板にドライエッチング、ＣＶＤまたはスパ
ッタなどの表面処理を施すのに使用される真空処理装置
において、表面処理が終了したときに基板保持台上に静
電吸着している被処理基板を基板保持台から剥がして取
り外す制御方法およびその基板取り外し制御方法に適し
た構成を備えた真空処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus used for subjecting a substrate to be processed to a surface treatment such as dry etching, CVD, or sputtering when manufacturing a semiconductor element, a liquid crystal display panel, or a solar cell. And a control method for removing and removing a substrate to be processed electrostatically adsorbed on a substrate holding table from the substrate holding table when the surface processing is completed, and a vacuum processing apparatus having a structure suitable for the substrate removing control method It is.
【０００２】[0002]
【従来の技術】近年、プラズマ処理装置では、デバイス
の高機能化とその処理コストの低減のために、高精度
化、高速化、大面積化および低ダメージ化を実現するた
めの取り組みが盛んに行われている。なかでも、成膜に
おいては基板内の膜質の均一化を得るために、また、微
細加工に用いられるドライエッチングにおいては寸法精
度の確保のために、それぞれ被処理基板の温度をその面
内全体にわたり均一に、且つ精密に制御することが特に
要求されている。この基板温度を制御する手段として、
ヘリウムガスなどの不活性の伝熱ガスを利用したプラズ
マ処理装置が使用され始めている（特開平4 −100257号
公報参照）。2. Description of the Related Art In recent years, in a plasma processing apparatus, efforts are being made to achieve high precision, high speed, large area, and low damage in order to enhance the functionality of the device and reduce the processing cost. Is being done. In particular, in order to obtain uniform film quality in the substrate during film formation, and to secure dimensional accuracy in dry etching used for microfabrication, the temperature of the substrate to be processed is set over the entire surface thereof. There is a particular need for uniform and precise control. As means for controlling the substrate temperature,
A plasma processing apparatus using an inert heat transfer gas such as helium gas has begun to be used (see JP-A-4-100257).
【０００３】上記プラズマ処理装置は、メカクランプ若
しくは静電吸着電極を利用して被処理基板を基板保持台
上に強固に保持するとともに、伝熱ガスを被処理基板と
基板保持台との隙間に供給して充満させる。これによ
り、極めて流動性の良い伝熱ガスは、被処理基板から熱
を吸収して基板保持台に対し伝熱し、基板保持台は、内
部の冷却水路内を常時流れる冷却水により冷却される。
そのため、被処理基板は、プラズマの熱により過熱され
たり、レジストが変質して表面処理不良が発生したりす
るのを未然に防止されるとともに、全面の温度を均一、
且つ一定に保持して良好な表面処理特性を得られるよう
になっている。The above-described plasma processing apparatus uses a mechanical clamp or an electrostatic chucking electrode to firmly hold a substrate to be processed on a substrate holder, and transfers heat transfer gas to a gap between the substrate and the substrate holder. Supply and charge. As a result, the heat transfer gas having extremely high fluidity absorbs heat from the substrate to be processed and transfers the heat to the substrate holder, and the substrate holder is cooled by the cooling water constantly flowing in the internal cooling water passage.
Therefore, the substrate to be processed is prevented from being overheated by the heat of the plasma, the resist being deteriorated and surface treatment defects being prevented from occurring, and the temperature of the entire surface is made uniform.
In addition, good surface treatment characteristics can be obtained while maintaining the surface constant.
【０００４】上記プラズマ処理装置では、内部に静電吸
着電極が埋設された基板保持台上に載置した被処理基板
を、直流電圧が印加された静電吸着電極により静電吸着
して固定した状態において、被処理基板に対し通常のプ
ラズマ処理が施される。プラズマ処理（表面処理）とし
ては、高周波電源からの高周波電力の印加などによって
真空容器内にプラズマガスを発生させて、プラズマガス
の成分に応じた薄膜を形成するスパッタリング、半導体
ウエハ上の半導体層をフォトレジストに従いプラズマガ
スによって選択的に除去することにより半導体パターン
を形成するドライエッチング、ドライエッチング後に不
要となったフォトレジストを除去するアッシングなどが
ある。In the above plasma processing apparatus, a substrate to be processed, which is mounted on a substrate holding table in which an electrostatic chucking electrode is embedded, is fixed by electrostatic chucking with a DC chucking electrode to which a DC voltage is applied. In this state, normal plasma processing is performed on the substrate to be processed. Plasma treatment (surface treatment) includes generating a plasma gas in a vacuum chamber by applying high-frequency power from a high-frequency power supply and forming a thin film according to the components of the plasma gas, and sputtering a semiconductor layer on a semiconductor wafer. There are dry etching for forming a semiconductor pattern by selectively removing the photoresist by a plasma gas in accordance with the photoresist, and ashing for removing the photoresist which becomes unnecessary after the dry etching.
【０００５】ところで、上記のようなプラズマ処理装置
では、静電吸着電極への直流電力の供給を遮断しても、
静電吸着電極の表面の絶縁層に電荷が残留し、また、場
合によっては絶縁性の被処理基板に帯電電荷が残留す
る。このため、被処理基板が静電吸着電極に静電的に吸
着した状態に保持され続けるので、被処理基板は、搬送
アームなどに移載するための突き上げ機構で突き上げら
れた場合に、静電吸着電極から剥離することができなか
ったり、破損したり、飛び跳ねて次工程への搬送が不能
となったりすることがある。そこで、プラズマ処理が終
了した時点で、直流電源から静電吸着電極への印加電圧
の極性を反転させることにより、静電吸着電極の残留電
荷を打ち消したのちに、被処理基板を突き上げ機構によ
る突き上げ力で静電吸着電極から突き上げて剥離し、次
工程へ搬送するようにしている。In the above plasma processing apparatus, even if the supply of DC power to the electrostatic attraction electrode is cut off,
Electric charges remain on the insulating layer on the surface of the electrostatic attraction electrode, and in some cases, charged electric charges remain on the insulating substrate to be processed. For this reason, the substrate to be processed is continuously held in a state of being electrostatically attracted to the electrostatic attraction electrode, so that when the substrate to be processed is pushed up by a push-up mechanism for transferring to a transfer arm, etc. In some cases, it may not be able to be peeled off from the adsorption electrode, may be damaged, or may jump off, making it impossible to carry it to the next step. Therefore, when the plasma processing is completed, the polarity of the voltage applied from the DC power supply to the electrostatic attraction electrode is inverted to cancel the residual charge of the electrostatic attraction electrode, and then the substrate to be processed is pushed up by the pushing up mechanism. They are lifted up from the electrostatic attraction electrodes by force, peeled off, and transported to the next process.
【０００６】ところが、上述の静電吸着電極に印加する
直流電圧の極性を反転させて除電する方式では、残留電
荷を過不足なく完全に除去することが困難で、残留電荷
が残ったり、逆極性に帯電させてしまったりして、被処
理基板を静電吸着電極から確実に剥離できないことがあ
る。このような状態で突き上げ機構により被処理基板を
突き上げてしまうと、被処理基板には、損傷、次工程へ
の搬送不能、搬送姿勢の不良、脱落および次工程への受
渡し不能といった搬送トラブルが発生することがあり、
信頼性に欠ける。However, it is difficult to completely and completely remove the residual electric charge by inverting the polarity of the DC voltage applied to the electrostatic chucking electrode. In some cases, the substrate to be processed cannot be reliably separated from the electrostatic chucking electrode. If the substrate to be processed is pushed up by the push-up mechanism in such a state, transfer troubles such as damage, inability to transport to the next process, poor transport posture, dropout, and inability to deliver to the next process occur. May be
Lack of reliability.
【０００７】そこで、本出願人は、表面処理済みの基板
を、静電吸着電極に対する静電吸着力の残留状態に応じ
て適時に無理なく突き上げて静電吸着電極からスムーズ
に剥離させることのできる基板の取り扱い方法を先に提
案している（特願平10−61318 号) 。このプラズマ処理
装置における基板の取り扱い方法について、図２を参照
しながら簡単に説明する。なお、このプラズマ処理装置
の詳細については、図１に基づく本発明の説明において
後述する。すなわち、図２において符号を付しながら説
明をしない部材などについては、図１において詳細に説
明する。Therefore, the applicant of the present invention can smoothly push up the surface-treated substrate in a timely manner according to the remaining state of the electrostatic attraction force to the electrostatic attraction electrode, and smoothly separate the substrate from the electrostatic attraction electrode. A method for handling substrates has been proposed earlier (Japanese Patent Application No. 10-61318). A method of handling a substrate in the plasma processing apparatus will be briefly described with reference to FIG. The details of the plasma processing apparatus will be described later in the description of the present invention based on FIG. That is, members that are not described with reference numerals in FIG. 2 will be described in detail with reference to FIG.
【０００８】基板保持台３上に載置された被処理基板４
は、基板保持台３内に埋設された静電吸着電極を兼ねる
一対の内部電極７Ａ，７Ｂに正極および負極の直流電源
８，９から直流電圧が印加されることにより、基板保持
台３の上面に静電吸着して保持され、この状態で表面処
理される。被処理基板４の表面処理が終了したのちに、
内部電極７Ａ，７Ｂに対する直流電源８，９からの電力
供給が停止したときに、被処理基板４は、自体のプラズ
マからの帯電および基板保持台３の絶縁層表面との間に
存在する残留電荷のために、静電的に基板保持台３に吸
着されている。The substrate 4 to be processed placed on the substrate holder 3
The upper surface of the substrate holder 3 is applied by applying a DC voltage from positive and negative DC power supplies 8 and 9 to a pair of internal electrodes 7A and 7B embedded in the substrate holder 3 and also serving as electrostatic attraction electrodes. Is held by electrostatic attraction, and surface treatment is performed in this state. After the surface treatment of the target substrate 4 is completed,
When the power supply from the DC power supplies 8 and 9 to the internal electrodes 7A and 7B is stopped, the substrate 4 to be processed is charged from its own plasma and the residual charge existing between the substrate 4 and the insulating layer surface of the substrate holder 3. Is electrostatically attracted to the substrate holding table 3.
【０００９】ここで、被処理基板４に対し搬送するため
に突き上げ機構１９で突き上げて基板保持台３から剥離
しようとすると、被処理基板４の搬送トラブルや破損を
招いてしまう。Here, if the substrate 4 is lifted up by the lifting mechanism 19 to be transported to the substrate 4 to be peeled off from the substrate holding table 3, the substrate 4 to be transported may be transported or damaged.
【００１０】そこで、被処理基板４は、以下のような工
程を経て取り外す。すなわち、被処理基板４の表面処理
が終了して基板保持台３に吸着している被処理基板４を
突き上げ機構１９により突き上げたときに、検出手段２
０は、突き上げ機構１９の先端が被処理基板４に接触し
た時点で、静電吸着が生じていない状態において突き上
げ機構１９に加わる外力としての初期設定値以上の力を
検出する。ここで、検出手段２０は、突き上げ機構１９
の駆動力伝達軸線Ｘと一軸上に固定されているため、吸
着力を含む全ての荷重を確実に測定することができる。
そのため、検出手段２０は、上述の外力である初期設定
値をオフセットすることにより、被処理基板４と基板保
持台３との静電吸着力のみを極めて正確に測定する。Therefore, the substrate 4 to be processed is removed through the following steps. In other words, when the surface treatment of the substrate 4 to be processed is completed and the substrate 4 to be processed adsorbed on the substrate holding table 3 is pushed up by the push-up mechanism 19, the detecting means 2
When the tip of the push-up mechanism 19 comes into contact with the substrate 4 to be processed, a force equal to or greater than an initial set value as an external force applied to the push-up mechanism 19 in a state where electrostatic attraction does not occur is detected. Here, the detecting means 20 is provided with the push-up mechanism 19.
Is fixed on one axis with the driving force transmission axis X, it is possible to reliably measure all loads including the attraction force.
Therefore, the detection unit 20 extremely accurately measures only the electrostatic attraction force between the substrate 4 to be processed and the substrate holding table 3 by offsetting the initial setting value as the external force.
【００１１】制御手段２１は、検出手段２０が検出した
静電吸着力が所定値以上であると内蔵の判定部２１ｂが
判別した場合に、突き上げ機構１９の駆動源である駆動
手段２３を制御して、突き上げ機構１９による被処理基
板４への突き上げ力が被処理基板４の材質の剪断応力限
界に達する以前の時点で、突き上げ動作を停止させたの
ち、突き上げ機構１９を一旦下降させ、被処理基板４の
破損を未然に防止する。The control means 21 controls the drive means 23 as a drive source of the push-up mechanism 19 when the built-in determination section 21b determines that the electrostatic attraction force detected by the detection means 20 is equal to or more than a predetermined value. Before the pushing force of the push-up mechanism 19 on the substrate 4 to be processed reaches the shearing stress limit of the material of the substrate 4 to be processed, the push-up operation is stopped, and then the push-up mechanism 19 is once lowered and the processing target is stopped. The substrate 4 is prevented from being damaged.
【００１２】続いて、制御手段２１は、検出手段２０の
検出値の静電吸着力が所定値以上であると判定部２１ｂ
が判別する限り、突き上げ機構１９に対し被処理基板４
を突き上げたのちに下降させる動作を繰り返すよう制御
する。これにより、被処理基板４は、突き上げ機構１９
で断続的に突き上げられる部分から徐々に基板保持台３
に対し剥離されていき、被処理基板４と基板保持台３と
の接触面積が徐々に減少していくのに伴って、これらの
間の残留電荷が伝熱ガスを媒体として電気的に中和され
ていき、残留電荷が減少していく。Subsequently, the control means 21 determines that the electrostatic attraction force of the detection value of the detection means 20 is equal to or greater than a predetermined value.
As long as is determined, the push-up mechanism 19
Is controlled to repeat the operation of pushing up and then descending. As a result, the processing target substrate 4 is moved up by the push-up mechanism 19.
Substrate holder 3 gradually from the part intermittently pushed up by
As the contact area between the processing target substrate 4 and the substrate holding table 3 gradually decreases, residual charges between them are electrically neutralized using a heat transfer gas as a medium. And the residual charge decreases.
【００１３】静電吸着力が被処理基板４の剪断応力より
も十分に小さくなったと判定部２１ｂが判別したとき
に、制御手段２１は、突き上げによって被処理基板４が
突き上げ機構１９に対し位置ずれが生じない範囲内にお
いて最も速い上昇速度で突き上げ機構１９を駆動させ、
被処理基板４を基板保持台３から剥離して外部に搬送さ
せる。When the judging section 21b determines that the electrostatic attraction force is sufficiently smaller than the shearing stress of the substrate 4 to be processed, the control means 21 causes the substrate 4 to be displaced with respect to the push-up mechanism 19 by pushing up. The push-up mechanism 19 is driven at the fastest rising speed within a range where no
The substrate to be processed 4 is separated from the substrate holding table 3 and transported to the outside.
【００１４】[0014]
【発明が解決しようとする課題】上記のプラズマ処理装
置における被処理基板４の取り外し方法は、被処理基板
４を突き上げ機構１９により突き上げる際に、被処理基
板４の基板保持台３への静電吸着力に関するデータを検
出手段２０などで検出し、静電吸着力が所定値以上であ
る場合に突き上げ機構１９による突き上げ動作を規制し
ているので、被処理基板４を吸着力の残留状態に応じて
基板保持台３から適時に無理なく突き上げて剥離でき、
被処理基板４の破損や搬送トラブルなどを確実に防止で
きる効果を奏するものである。ところが、実用化に際し
ては、なお解消しなければならない問題が残存してい
る。すなわち、被処理基板４の基板保持台３に対する静
電吸着力は、被処理基板４の処理条件の相違によって強
く残留する場合があり、そのような場合、上記の被処理
基板４の取り外し方法では、突き上げ機構１９の昇降動
作の繰り返しによる被処理基板４への断続的な突き上げ
動作を継続して行わなければならず、被処理基板４を基
板保持台３から剥離するまでに相当の時間を必要とし、
生産性が低下してしまう。The method for removing the substrate to be processed 4 in the above-described plasma processing apparatus includes the following steps. The data relating to the attraction force is detected by the detecting means 20 or the like, and when the electrostatic attraction force is equal to or more than a predetermined value, the thrusting operation by the thrusting mechanism 19 is regulated. Can be lifted off the substrate holder 3 in a timely and comfortable manner,
This has the effect of reliably preventing breakage of the substrate to be processed 4 and transport troubles. However, in practical use, there still remains a problem that must be solved. That is, the electrostatic attraction force of the substrate to be processed 4 on the substrate holding table 3 may remain strongly due to the difference in the processing conditions of the substrate to be processed 4. It is necessary to continuously perform an intermittent push-up operation to the substrate 4 by repeating the raising / lowering operation of the push-up mechanism 19, and a considerable time is required until the target substrate 4 is separated from the substrate holding table 3. age,
Productivity decreases.
【００１５】そこで本発明は、基板保持台に静電吸着し
ている被処理基板を、これの破損や搬送トラブルを防止
しながら安定、且つ極めて迅速に基板保持台から剥離し
て取り外すことのできる基板取り外し制御方法およびそ
の基板取り外し制御方法に適した構成を有する真空処理
装置を提供することを目的とするものである。Therefore, according to the present invention, the substrate to be processed electrostatically attracted to the substrate holding table can be stably and extremely quickly peeled off from the substrate holding table while preventing breakage or transport trouble thereof. It is an object of the present invention to provide a substrate removal control method and a vacuum processing apparatus having a configuration suitable for the substrate removal control method.
【００１６】[0016]
【課題を解決するための手段】上記目的を達成するため
に、本発明の真空処理装置の基板取り外し制御方法は、
真空容器内の基板保持台上に保持された被処理基板と前
記基板保持台との間に基板温度制御用の伝熱ガスを供給
しながら前記被処理基板に対し表面処理を行ったのち、
その表面処理に伴って前記被処理基板に生じた帯電によ
る前記被処理基板と前記基板保持台との静電吸着力を、
前記被処理基板を突き上げた時の突き上げ負荷に基づい
て検出し、その検出値が所定値以上であるとき、突き上
げ力が前記被処理基板の剪断応力限界に達する以前に突
き上げ動作を停止するとともに、前記伝熱ガスを前記被
処理基板と前記基板保持台の間に再度供給して所定の圧
力としたのち、前記突き上げ力と前記伝熱ガスの圧力と
を前記検出値に基づきフィードバック制御して前記被処
理基板を前記基板保持台から剥離させるようにしたこと
を特徴とする。To achieve the above object, a method for controlling the removal of a substrate of a vacuum processing apparatus according to the present invention comprises:
After performing a surface treatment on the target substrate while supplying a heat transfer gas for substrate temperature control between the target substrate held on the substrate holder in the vacuum vessel and the substrate holder,
The electrostatic attraction force between the substrate to be processed and the substrate holding table due to charging generated on the substrate to be processed due to the surface treatment,
Detecting based on the pushing load when pushing up the substrate to be processed, and when the detected value is equal to or greater than a predetermined value, stopping the pushing up operation before the pushing up force reaches the shear stress limit of the substrate to be treated, After the heat transfer gas is again supplied between the substrate to be processed and the substrate holding table to a predetermined pressure, the thrust and the pressure of the heat transfer gas are feedback-controlled based on the detected value, and The substrate to be processed is separated from the substrate holder.
【００１７】この基板取り外し制御方法では、被処理基
板の突き上げ負荷に基づいて被処理基板と基板保持台と
の静電吸着力を検出して、その検出値が所定値以上であ
るときに、突き上げ力が被処理基板の剪断応力限界に達
する以前に突き上げ動作を停止させて、被処理基板と基
板保持台との隙間に再び伝熱ガスを供給して所定の圧力
に調圧している。それにより、流動性が極めて良好な伝
熱ガスが被処理基板と基板保持台との隙間に流入して、
被処理基板の裏面全体を伝熱ガスの圧力による被処理基
板を破損させない押圧力で均等に押すことと同様の動作
となる。そのため、被処理基板には、これの中央部のみ
を断続的に突き上げる場合に比較して突き上げ力が格段
に効果的、且つ効率的に作用するとともに、基板保持台
と被処理基板との間の残留電荷が圧力の高い伝熱ガスを
媒体として電気的に速やかに中和される。この結果、被
処理基板と基板保持台との間の静電吸着力が一挙に減少
するので、被処理基板を極めて迅速、且つ円滑に基板保
持台から剥離させて、トラブルなく安定に次工程に搬送
でき、スループットの向上が可能となる。In this substrate removal control method, the electrostatic attraction force between the substrate to be processed and the substrate holding table is detected based on the thrust load of the substrate to be processed, and when the detected value is equal to or greater than a predetermined value, the thrust is raised. Before the force reaches the shearing stress limit of the substrate to be processed, the thrusting operation is stopped, and a heat transfer gas is supplied again to the gap between the substrate to be processed and the substrate holder to regulate the pressure to a predetermined pressure. Thereby, the heat transfer gas having extremely good fluidity flows into the gap between the substrate to be processed and the substrate holding table,
The operation is the same as pressing the entire back surface of the substrate to be processed evenly with the pressing force that does not damage the substrate to be processed by the pressure of the heat transfer gas. Therefore, as compared with the case where only the central portion of the substrate is intermittently pushed up, the pushing-up force acts much more effectively and efficiently, and the force between the substrate holding table and the substrate to be treated is increased. Residual charges are quickly and electrically neutralized using a high pressure heat transfer gas as a medium. As a result, the electrostatic attraction force between the substrate to be processed and the substrate holder is reduced at once, so that the substrate to be processed can be peeled off the substrate holder very quickly and smoothly, and the next process can be stably performed without any trouble. The transfer can be performed, and the throughput can be improved.
【００１８】上記基板取り外し制御方法において、検出
値の静電吸着力が所定値以上であるとき、突き上げ力が
剪断応力限界以下の設定値に達した時点で突き上げ動作
を停止するとともに、伝熱ガスの圧力を、前記検出値か
ら算出した値に調圧することが好ましい。In the above-described substrate removal control method, when the detected electrostatic attraction force is equal to or more than a predetermined value, the thrust operation is stopped when the thrust force reaches a set value equal to or less than the shear stress limit, and the heat transfer gas is removed. Is preferably adjusted to a value calculated from the detected value.
【００１９】これにより、伝熱ガスの圧力を、被処理基
板を破損させない範囲内において可及的に大きく設定で
きるので、被処理基板の基板保持台からの剥離をさらに
効果的に行え、迅速に剥離できる。With this, the pressure of the heat transfer gas can be set as large as possible within a range that does not damage the substrate to be processed, so that the substrate to be processed can be more effectively separated from the substrate holding table, and can be quickly performed. Can be peeled.
【００２０】また、上記基板取り外し制御方法におい
て、被処理基板を突き上げた時の突き上げ負荷に基づい
て検出した検出値が、静電吸着が生じていない状態で突
き上げ機構に加わる外力に対応した初期設定値を超えた
時点で、伝熱ガスの供給を開始するとともに、前記伝熱
ガスの圧力を前記検出値と前記初期設定値の差の圧力に
調圧することもできる。In the above-described substrate removal control method, the detection value detected based on the thrust load when the target substrate is thrust up may be set to an initial value corresponding to an external force applied to the thrust mechanism in a state where electrostatic attraction does not occur. At the time when the value exceeds the value, the supply of the heat transfer gas may be started, and the pressure of the heat transfer gas may be adjusted to a pressure equal to the difference between the detected value and the initial set value.
【００２１】これにより、被処理基板と基板保持台との
静電吸着力を可及的早期において効果的に減少させるこ
とができるから、被処理基板の基板保持台からの剥離を
一層迅速に行うことが可能となる。Thus, the electrostatic attraction between the substrate to be processed and the substrate holder can be effectively reduced as early as possible, so that the substrate to be processed can be more quickly separated from the substrate holder. It becomes possible.
【００２２】本発明の真空処理装置は、被処理基板の基
板保持台、内部を真空排気する真空排気手段および反応
ガスを内部に導入する反応ガス供給手段を有する真空容
器と、前記被処理基板の表面処理の終了時に前記基板保
持台の上面に静電吸着している前記被処理基板を突き上
げる突き上げ機構と、前記突き上げ機構の突き上げ力伝
達部に設けられ、前記突き上げ機構による突き上げ負荷
を前記被処理基板と前記基板保持台との静電吸着力に関
するデータとして検出する検出手段と、前記基板保持台
と前記被処理基板との間に基板温度制御用の伝熱ガスを
供給する伝熱ガス供給手段と、前記伝熱ガスの圧力を制
御するガス圧力調整機構と、前記検出手段の検出値が所
定値以上であるときに、前記検出値に基づき前記突き上
げ機構に対しその突き上げ動作を規制するようフィード
バック制御する制御手段と、前記被処理基板の表面処理
の終了時に前記制御手段から入力されるデータに基づき
前記伝熱ガス供給手段と前記ガス圧力調整機構とをフィ
ードバック制御する基板冷却制御部とを備えたことを特
徴とする。A vacuum processing apparatus according to the present invention comprises: a vacuum container having a substrate holding table for a substrate to be processed, a vacuum exhaust means for evacuating the inside and a reaction gas supply means for introducing a reaction gas into the inside; A push-up mechanism for pushing up the substrate to be processed, which is electrostatically attracted to the upper surface of the substrate holding table at the end of the surface treatment, and a push-up force transmission unit of the push-up mechanism; Detecting means for detecting as data relating to electrostatic attraction between a substrate and the substrate holder, and heat transfer gas supplying means for supplying a heat transfer gas for controlling a substrate temperature between the substrate holder and the substrate to be processed And a gas pressure adjusting mechanism for controlling the pressure of the heat transfer gas, and, when a detection value of the detection means is equal to or greater than a predetermined value, the thrust mechanism based on the detection value. Control means for performing feedback control so as to regulate the lifting operation; and feedback control of the heat transfer gas supply means and the gas pressure adjusting mechanism based on data input from the control means at the end of the surface treatment of the substrate to be processed. And a substrate cooling control unit.
【００２３】この真空処理装置では、検出手段が突き上
げ機構の被処理基板に対する突き上げ負荷に基づいて被
処理基板と基板保持台との静電吸着力を検出し、その検
出値が所定値以上であるときに、制御手段が、突き上げ
力が被処理基板の剪断応力限界に達する以前に突き上げ
機構の突き上げ動作を停止させるよう制御し、基板冷却
制御部が、制御手段からのデータに基づいて伝熱ガス供
給手段を制御して被処理基板と基板保持台との隙間に再
び伝熱ガスを供給させ、且つガス圧力調整機構を制御し
て所定の圧力に調圧させる。これにより、被処理基板
は、その裏面全体を伝熱ガスの圧力による被処理基板を
破損させない押圧力で均等に押し上げられて、被処理基
板には格段に効果的、且つ効率的に突き上げ力が作用す
るとともに、基板保持台と被処理基板との間の残留電荷
が伝熱ガスを媒体として電気的に速やかに中和される。
そのため、被処理基板と基板保持台との静電吸着力が一
挙に減少する。したがって、本発明の基板取り外し制御
方法を忠実に具現して同様の効果を得ることができる。In this vacuum processing apparatus, the detecting means detects the electrostatic attraction force between the substrate to be processed and the substrate holding table based on the thrust load of the thrust mechanism on the substrate to be processed, and the detected value is not less than a predetermined value. Sometimes, the control means controls the thrusting operation of the thrusting mechanism to be stopped before the thrusting force reaches the shear stress limit of the substrate to be processed, and the substrate cooling control unit controls the heat transfer gas based on data from the control means. The supply means is controlled to supply the heat transfer gas to the gap between the substrate to be processed and the substrate holding table again, and the gas pressure adjusting mechanism is controlled to regulate the pressure to a predetermined pressure. As a result, the substrate to be processed is evenly pushed up with the pressing force that does not damage the substrate to be processed by the pressure of the heat transfer gas, and the thrust force is extremely effectively and efficiently applied to the substrate to be processed. At the same time, the residual charge between the substrate holding table and the substrate to be processed is quickly and electrically neutralized using the heat transfer gas as a medium.
Therefore, the electrostatic attraction force between the substrate to be processed and the substrate holder is reduced at once. Therefore, the same effect can be obtained by faithfully implementing the board removal control method of the present invention.
【００２４】[0024]
【発明の実施の形態】以下、本発明の好ましい実施の形
態について図面を参照しながら説明する。図１は本発明
の一実施の形態に係る真空処理装置の断面構成図を示
し、同図において、図２と同一若しくは同等のものには
同一の符号を付してある。この真空処理装置が図２の従
来装置に対し相違するのは、構成上において、ガス圧力
調整機構１２における圧力測定器１２ａおよび圧力調整
バルブ１２ｂとガス供給機構１１の流量コントローラ１
１ａとにそれぞれ接続した基板冷却制御部２８を新たに
設けて、この基板冷却制御部２８に制御手段２１を接続
した点のみであり、この構成の詳細については後述す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a vacuum processing apparatus according to an embodiment of the present invention, in which the same or equivalent components as in FIG. 2 are denoted by the same reference numerals. This vacuum processing apparatus is different from the conventional apparatus of FIG. 2 in that the pressure measuring device 12a and the pressure adjusting valve 12b of the gas pressure adjusting mechanism 12 and the flow controller 1 of the gas supply mechanism 11 are different in configuration.
1a, a new substrate cooling control unit 28 is provided, and the control means 21 is connected to the substrate cooling control unit 28. The details of this configuration will be described later.
【００２５】図１には、シリコンウエハを被処理基板４
として、これに反応性イオンエッチング型のプラズマド
ライエッチングを行う真空処理装置を例示してある。真
空容器１は、内部を真空に排気するための真空排気手段
２と、反応ガスを内部に導入するための反応ガス供給手
段１３とを備えている。真空容器１の内部には被処理基
板４を上面に載置して保持する基板保持台３が設けら
れ、真空容器１の外部には、基板保持台３が保持してい
る被処理基板４をそれの表面処理後に突き上げて基板保
持台３から剥離させるための突き上げ機構１９と、この
突き上げ機構１９が被処理基板４を突き上げる際の被処
理基板４の基板保持台３に対する静電吸着力に関するデ
ータを突き上げ機構１９の突き上げ負荷に基づいて検出
する検出手段２０と、この検出されたデータからその時
の静電吸着力が所定値以上であると内蔵の判定部２１ｂ
が判別しているときに、突き上げ機構１９の突き上げ動
作を規制するとともに基板冷却制御部２８に対し検出手
段２０の検出データに対応するデータをを出力する制御
手段２１とを備えている。FIG. 1 shows that a silicon wafer is
As an example, a vacuum processing apparatus for performing reactive ion etching type plasma dry etching is illustrated. The vacuum vessel 1 includes a vacuum evacuation unit 2 for evacuating the inside to a vacuum, and a reaction gas supply unit 13 for introducing a reaction gas into the inside. A substrate holder 3 is provided inside the vacuum vessel 1 for holding the substrate 4 to be processed placed on the upper surface, and the substrate 4 held by the substrate holder 3 is provided outside the vacuum vessel 1. A push-up mechanism 19 for pushing up and peeling off the substrate holder 3 after the surface treatment, and data relating to the electrostatic attraction force of the target substrate 4 to the substrate holder 3 when the push-up mechanism 19 pushes up the substrate 4. 20 based on the thrust load of the thrust mechanism 19, and a built-in determination unit 21b based on the detected data that the electrostatic attraction force at that time is equal to or more than a predetermined value.
And control means 21 for controlling the push-up operation of the push-up mechanism 19 and outputting data corresponding to the detection data of the detection means 20 to the substrate cooling control unit 28 when the determination is made.
【００２６】上記基板保持台３は、静電吸着型のもので
あって、例えば厚さが５ｍｍ程度のアルミナ誘電体部２
９と、内部に図示しない冷却水路を有したアルミニウム
製のベース部３０とで構成され、アルミナ誘電体部２９
の表面から500 μｍの内部に、タングステンからなる一
対の静電吸着用を兼ねる下部電極である内部電極７Ａ，
７Ｂが内蔵されている。一対の内部電極７Ａ，７Ｂに
は、対応する正極の直流電源８および負極の直流電源９
からそれぞれ個別の高周波フイルタ１０を介して正、負
電圧が印加されるようになっている。正極および負極の
直流電圧印加回路の高周波フイルタ１０よりも内部電極
７Ａ，７Ｂ側の部分には、13.56 ＭＨｚの高周波電源１
４がそれぞれ個別の直流カット用コンデンサ１７を介し
て接続されており、前記一対の内部電極７Ａ，７Ｂにコ
ンデンサ１７を介して高周波電力を印加できるようにな
っている。真空容器１内の上部には基板保持台３の内部
電極７Ａ，７Ｂと対向する上部電極１８が設けられて接
地され、この双方の電極１８，７Ａ，７Ｂ間での高周波
電圧の印加により、真空容器１内に供給された反応ガス
をプラズマ化する。The substrate holder 3 is of an electrostatic attraction type, for example, an alumina dielectric part 2 having a thickness of about 5 mm.
9 and an aluminum base portion 30 having a cooling water passage (not shown) therein.
An inner electrode 7A, which is a lower electrode also serving as a pair of electrostatic chucks, made of tungsten
7B is built in. The pair of internal electrodes 7A and 7B are provided with a corresponding positive DC power supply 8 and a negative DC power supply 9 respectively.
Thus, positive and negative voltages are applied via the respective high-frequency filters 10. A 13.56 MHz high frequency power supply 1 is provided between the high frequency filter 10 and the internal electrodes 7A and 7B of the positive and negative DC voltage application circuits.
4 are connected via individual DC cut capacitors 17 so that high-frequency power can be applied to the pair of internal electrodes 7A and 7B via the capacitor 17. An upper electrode 18 opposed to the internal electrodes 7A and 7B of the substrate holder 3 is provided on the upper portion in the vacuum vessel 1 and grounded, and a vacuum is applied by applying a high-frequency voltage between the two electrodes 18, 7A and 7B. The reaction gas supplied into the container 1 is turned into plasma.
【００２７】上記突き上げ機構１９は、４本の突き上げ
ピン１９ａが基板保持台３の内部を下方から上方へ貫通
できるように設けられており、通常時には突き上げピン
１９ａが図示のように基板保持台３内に没しているが、
処理すべき被処理基板４が搬送アームなどによって外部
から真空容器１内に搬入されたときに、突き上げピン１
９ａが基板保持台３の上方へ突出されて被処理基板４を
受け取ったのちに、再び基板保持台３内に没して、被処
理基板４を基板保持台３上に載置する。また、突き上げ
機構１９は、基板保持台３上に静電吸着して保持された
被処理基板４の表面処理が終了したときも、突き上げピ
ン１９ａの先端が基板保持台３の上方へ突出されて被処
理基板４をその裏面から突き上げ、被処理基板４を基板
保持台３から剥離するよう機能する。突き上げ機構１９
が基板保持台３を貫通する部分は、その外気側において
ベローズ２２単体で、あるいはケーシング３１と共同で
大気からシールされている。The push-up mechanism 19 is provided so that four push-up pins 19a can penetrate the inside of the substrate holder 3 from below to above. Immersed in
When the substrate 4 to be processed is carried into the vacuum chamber 1 from outside by a transfer arm or the like, the push-up pins 1
After the substrate 9a is projected above the substrate holder 3 and receives the substrate 4 to be processed, the substrate 9a is again immersed in the substrate holder 3 and the substrate 4 is placed on the substrate holder 3. The push-up mechanism 19 also allows the tip of the push-up pin 19a to protrude above the substrate holding base 3 when the surface treatment of the processing target substrate 4 electrostatically attracted and held on the substrate holding base 3 is completed. The substrate to be processed 4 is pushed up from its back surface, and functions to separate the substrate to be processed 4 from the substrate holding table 3. Thrust mechanism 19
A portion of the bellows 22 penetrating through the substrate holding table 3 is sealed from the atmosphere on the outside air side with the bellows 22 alone or together with the casing 31.
【００２８】上記検出手段２０は、例えばロードセルか
らなり、突き上げ機構１９による突き上げ負荷を静電吸
着力に関するデータとして検出するために、駆動手段２
３から突き上げ機構１９への突き上げ力伝達系の途中に
直結状態に設けられている。The detecting means 20 comprises, for example, a load cell. The detecting means 20 detects the pushing load by the pushing mechanism 19 as data relating to the electrostatic attraction force.
3 and is provided directly in the middle of a thrust force transmission system from the thrust mechanism 19 to the thrust mechanism 19.
【００２９】すなわち、検出手段２０は、突き上げ機構
１９を例えば垂直線上で突き上げ動作させる駆動手段２
３に対しその駆動力伝達軸線Ｘ上で直結されている。こ
れにより、駆動手段２３による突き上げ機構１９への突
き上げ動作が検出手段２０に正確に作用するので、検出
手段２０は、そのときの突き上げ負荷を精度良く検出す
ることができる。上記駆動手段としては、直動電動モー
タ、油圧シリンダ、エアシリンダまたはソレノイドなど
の直進動作をするアクチュエータ自体、またはアクチュ
エータの回転動作を直進動作に変換する構造の何れをも
用いることができる。That is, the detecting means 20 is a driving means 2 for causing the push-up mechanism 19 to perform a push-up operation, for example, on a vertical line.
3 is directly connected on its driving force transmission axis X. Accordingly, the pushing-up operation of the driving unit 23 to the pushing-up mechanism 19 accurately acts on the detecting unit 20, so that the detecting unit 20 can accurately detect the pushing-up load at that time. As the driving means, any of a linearly moving electric motor, a hydraulic cylinder, an air cylinder, an actuator that performs a linear motion such as an air solenoid, or a structure that converts a rotation operation of the actuator into a linear motion can be used.
【００３０】上記制御手段２１には、後述の初期設定値
などを記憶する記憶部２１ａと、検出手段２０が検出し
た静電吸着力に関するデータに基づいて現時点での静電
吸着力が記憶部２１ａに設定した所定値以上であるか否
かを判別する判定部２１ｂとを内蔵している。この制御
手段２１は、検出手段２０から取り込んだ検出データを
判定部２１ｂで判別し、その判別結果に基づいて駆動手
段２３をフィードバック制御する。The control unit 21 has a storage unit 21a for storing an initial set value, which will be described later, and a storage unit 21a for storing the current electrostatic attraction force based on data on the electrostatic attraction force detected by the detection unit 20. And a judgment unit 21b for judging whether or not the value is equal to or more than a predetermined value set in. The control unit 21 determines the detection data taken in from the detection unit 20 by the determination unit 21b, and performs feedback control of the driving unit 23 based on the determination result.
【００３１】なお、静電吸着力が所定値以上であると
き、駆動力の伝達に滑りが生じて突き上げ機構１９によ
る突き上げ動作が規制されるようなトルクリミッタを用
いれば、これそのものが上記の検出手段２０と判定部２
１ｂとの両機能を兼ね備えた制御手段となり、構成を簡
略化できる。When the electrostatic attraction force is equal to or more than a predetermined value, if a torque limiter is used which restricts the pushing-up operation by the pushing-up mechanism 19 due to a slip in the transmission of the driving force, the torque limiter itself becomes the above-described detection. Means 20 and judgment unit 2
1b, which is a control means having both functions, and the configuration can be simplified.
【００３２】被処理基板４と基板保持台３との隙間に
は、ガス供給源（図示せず）から伝熱ガス供給機構（伝
熱ガス供給手段）１１を介して、例えばヘリウムガスの
ような伝熱ガスが供給される。この伝熱ガス供給機構１
１は 流量コントローラ１１ａおよびバルブ１１ｂなど
により構成されている。このガス供給機構１１に対応し
て、被処理基板４と基板保持台３との間の伝熱ガスの圧
力を監視して制御するためのガス圧力調整機構１２が設
けられており、このガス圧力調整機構１２は、上述の圧
力測定器１２ａおよび圧力調整バルブ１２ｂなどにより
構成されている。なお、真空容器１には、基板保持台３
などの残留電荷を除去して次に搬入される被処理基板４
の表面処理に備えるために、紫外線ランプ３２および石
英ガラス３３からなる紫外線照射手段が設けられてい
る。In the gap between the substrate 4 to be processed and the substrate holder 3, a gas supply source (not shown) is provided via a heat transfer gas supply mechanism (heat transfer gas supply means) 11, such as helium gas. A heat transfer gas is supplied. This heat transfer gas supply mechanism 1
Reference numeral 1 denotes a flow controller 11a and a valve 11b. Corresponding to the gas supply mechanism 11, a gas pressure adjusting mechanism 12 for monitoring and controlling the pressure of the heat transfer gas between the substrate 4 to be processed and the substrate holder 3 is provided. The adjusting mechanism 12 includes the pressure measuring device 12a and the pressure adjusting valve 12b described above. The vacuum container 1 includes a substrate holding table 3
Substrate 4 to be processed next after removing residual charges such as
In order to prepare for the surface treatment described above, an ultraviolet irradiation means including an ultraviolet lamp 32 and a quartz glass 33 is provided.
【００３３】つぎに、上記真空処理装置の作用について
説明する。外部から真空容器１の内部に搬入された被処
理基板４が、突き上げ機構１９の突き上げピン１９ａの
上昇および下降によって基板保持台３の上面に載置され
ると、一対の内部電極７Ａ，７Ｂには直流電源８，９か
ら高周波フイルタ１０を介して正負の直流電圧1.0 ｋＶ
が印加される。これにより、被処理基板４は基板保持台
３の上面に静電吸着して強固に保持される。一方、真空
容器１の内部は真空排気手段２により真空排気される。Next, the operation of the vacuum processing apparatus will be described. When the target substrate 4 carried into the vacuum chamber 1 from the outside is placed on the upper surface of the substrate holding base 3 by raising and lowering the push-up pins 19a of the push-up mechanism 19, the pair of internal electrodes 7A and 7B Is a positive / negative DC voltage of 1.0 kV from the DC power supplies 8 and 9 via the high frequency filter 10.
Is applied. As a result, the substrate 4 to be processed is electrostatically attracted to the upper surface of the substrate holder 3 and is firmly held. On the other hand, the inside of the vacuum vessel 1 is evacuated by the evacuation means 2.
【００３４】つぎに、被処理基板４と基板保持台３との
隙間には、伝熱ガス供給機構１１によって伝熱ガスを10
ｃｃ／ｍｉｎで導入されるとともに、ガス圧力調整機構
１２によって10Ｔｏｒｒに調圧される。さらに、真空容
器１内には、反応ガス供給手段１３によって反応ガスで
あるＣＦ4 を3010ｃｃ／ｍｉｎと、Ｏ2 ガスを５ｃｃ／
ｍｉｎとが同時に導入されるとともに、200 Ｔｏｒｒに
調圧される。この状態において、一対の内部電極７Ａ，
７Ｂには、高周波電源１４から高周波電力を２分岐させ
たのちに直流カット用コンデンサ１７を通して供給され
る。これにより、一対の内部電極７Ａ，７Ｂと上部電極
１８との間にはプラズマが発生して、被処理基板４に対
して伝熱ガスにより効率良く冷却しながら所望の表面処
理（この実施の形態ではドライエッチング）が施され
る。Next, the heat transfer gas is supplied to the gap between the substrate 4 to be processed and the substrate holder 3 by the heat transfer gas supply mechanism 11.
The pressure is adjusted at 10 Torr by the gas pressure adjusting mechanism 12 while being introduced at cc / min. Further, the inside of the vacuum vessel 1 is supplied with the reaction gas supply means 13 so that the reaction gas CF 4 is 3010 cc / min and the O 2 gas is 5 cc / min.
min is introduced at the same time, and the pressure is adjusted to 200 Torr. In this state, the pair of internal electrodes 7A,
7B is supplied from a high-frequency power supply 14 through a DC cut capacitor 17 after the high-frequency power is branched into two. As a result, plasma is generated between the pair of internal electrodes 7A and 7B and the upper electrode 18, and a desired surface treatment (this embodiment) is performed while efficiently cooling the substrate 4 to be processed by the heat transfer gas. Dry etching) is performed.
【００３５】被処理基板４の表面処理が終了すると、高
周波電力、反応ガスおよび伝熱ガスの供給をそれぞれ停
止したのちに、真空排気手段２によって真空容器１の内
部を真空排気しながら直流電源８，９の出力を停止す
る。この表面処理が終了した時点では、被処理基板４自
体のプラズマからの帯電や被処理基板４と基板保持台３
の絶縁層表面との間に存在する残留電荷により、被処理
基板４が基板保持台３に対し静電的に吸着している。し
たがって、この状態で被処理基板４を突き上げ機構１９
で突き上げて基板保持台３から強制的に剥離しようとす
ると、被処理基板４の搬送トラブルや破損を起こしてし
まう。When the surface treatment of the substrate 4 is completed, the supply of the high-frequency power, the reaction gas and the heat transfer gas is stopped, and the DC power supply 8 is evacuated by the evacuation means 2 while the inside of the vacuum vessel 1 is evacuated. , 9 are stopped. When the surface treatment is completed, the substrate 4 itself is charged from the plasma or the substrate 4 and the substrate holder 3 are charged.
The substrate 4 to be processed is electrostatically attracted to the substrate holding table 3 by residual charges existing between the substrate holding table 3 and the insulating layer surface. Therefore, in this state, the substrate 4 to be processed is pushed up by the pushing mechanism 19.
If it is attempted to forcibly separate the substrate 4 from the substrate holding table 3 by transporting the substrate, the substrate 4 may be transported or damaged.
【００３６】そこで、残留電荷による静電吸着を解消す
る工程をつぎのように行う。先ず、静電吸着が発生しな
い状態において突き上げ機構１９に加わる外力を測定し
て、そのデータを初期設定値として制御手段２１の記憶
部２１ａに予め記憶しておく。この測定は以下のように
して行う。すなわち、基板保持台３上に単に載置した被
処理基板４を突き上げ機構１９の突き上げピン１９ａで
突き上げると、検出手段２０には、真空容器１側が真空
であることから大気圧による押し上げ力と、ベローズ２
２の引っ張りばねによる押し上げ力と、被処理基板４の
重量による押し下げ力との再現性のある外力が突き上げ
機構１９を通じて加わる。この検出手段２０が検出する
外力の検出データは記憶部２１ａに初期設定値として予
め設定される。この記憶した初期設定値は、再現性が高
いため、突き上げ機構１９を解体および再組み立てする
まで変更する必要がない。Therefore, a process for eliminating electrostatic attraction due to residual charges is performed as follows. First, an external force applied to the push-up mechanism 19 is measured in a state where electrostatic attraction does not occur, and the data is stored in the storage unit 21a of the control unit 21 as an initial set value in advance. This measurement is performed as follows. That is, when the processing target substrate 4 simply placed on the substrate holding table 3 is pushed up by the push-up pins 19a of the push-up mechanism 19, the detecting means 20 applies a pushing force due to the atmospheric pressure because the vacuum vessel 1 side is vacuum, Bellows 2
A reproducible external force of a push-up force by the tension spring 2 and a push-down force by the weight of the substrate to be processed 4 is applied through the push-up mechanism 19. The detection data of the external force detected by the detection means 20 is preset in the storage unit 21a as an initial setting value. Since the stored initial setting value has high reproducibility, it is not necessary to change the initial setting value until the push-up mechanism 19 is disassembled and reassembled.
【００３７】そして、実稼働時において、被処理基板４
の表面処理が終了すると、制御手段２１により駆動手段
２３が制御されて突き上げ機構１９の突き上げピン１９
ａが上昇し、基板保持台３に静電吸着している被処理基
板４に対し突き上げ機構１９の突き上げピン１９ａの先
端が接触したときに、検出手段２０は初期設定値以上の
力を検出する。ここで、検出手段２０は、突き上げ機構
１９の駆動力伝達軸線Ｘと一軸上に設けられているた
め、静電吸着力を含む全ての外力を確実に測定できるの
で、初期設定値をオフセットしてやることにより、静電
吸着力のみを極めて正確に測定する。During the actual operation, the substrate 4 to be processed
When the surface treatment is completed, the driving means 23 is controlled by the control means 21 and the push-up pins 19 of the push-up mechanism 19 are controlled.
When a rises and the tip of the push-up pin 19a of the push-up mechanism 19 comes into contact with the substrate 4 electrostatically attracted to the substrate holding table 3, the detecting means 20 detects a force equal to or more than the initial set value. . Here, since the detection means 20 is provided on one axis with the driving force transmission axis X of the push-up mechanism 19, all the external forces including the electrostatic attraction force can be reliably measured. Thereby, only the electrostatic attraction force is measured very accurately.
【００３８】また、制御手段２１の記憶部２１ａには、
被処理基板４を突き上げ機構１９による突き上げ力によ
って破断しないための剪断応力限界値が予め設定記憶さ
れている。実測値を示すと、ベローズ２２に加わる大気
圧の力が７ｋｇｆ、突き上げ機構１９の突き上げピン１
９ａの先端が被処理基板４に接触したときのベローズ２
２の引っ張りばね力が1.6 ｋｇｆ、被処理基板４の重量
が0.1 ｋｇｆであったので、初期設定値を8.5 ｋｇｆに
設定した。この初期設定値に20ｋｇｆを加算した28.5ｋ
ｇｆを剪断応力限界値として設定した。The storage unit 21a of the control means 21 has
A shear stress limit value for preventing the target substrate 4 from being broken by the pushing force of the pushing mechanism 19 is set and stored in advance. The measured values show that the force of the atmospheric pressure applied to the bellows 22 is 7 kgf,
Bellows 2 when tip of 9a contacts substrate 4 to be processed
Since the tensile spring force of No. 2 was 1.6 kgf and the weight of the substrate 4 to be processed was 0.1 kgf, the initial set value was set to 8.5 kgf. 28.5k which added 20kgf to this initial set value
gf was set as the shear stress limit.
【００３９】したがって、制御手段２１は、検出手段２
０による検出データが剪断応力限界に近づく値、例えば
20ｋｇｆに達したと判定部２１ｂが判別した時点で、駆
動手段２３を駆動制御して突き上げ機構１９による突き
上げ動作を停止させたのち、突き上げ機構１９を一旦下
降させる。このとき、制御手段２１は検出手段２０によ
る検出データを基板冷却制御部２８に対し出力し、基板
冷却制御部２８は、ガス供給機構１１の流量コントロー
ラ１１ａを制御して被処理基板４と基板保持台３との隙
間に再び伝熱ガスを供給させるとともに、検出データに
基づき算出した設定値に対応してガス圧力調整機構１２
の圧力測定器１２ａと圧力調整バルブ１２ｂとを制御
し、伝熱ガスの圧力を上記の設定値に調圧する。Therefore, the control means 21 is connected to the detection means 2
A value at which the detected data by 0 approaches the shear stress limit, for example
When the determination unit 21b determines that the pressure has reached 20 kgf, the driving unit 23 is driven to stop the thrusting operation by the thrusting mechanism 19, and then the thrusting mechanism 19 is once lowered. At this time, the control unit 21 outputs the data detected by the detection unit 20 to the substrate cooling control unit 28, and the substrate cooling control unit 28 controls the flow rate controller 11a of the gas supply mechanism 11 and The heat transfer gas is again supplied to the gap with the table 3 and the gas pressure adjusting mechanism 12 is set in accordance with the set value calculated based on the detection data.
The pressure measuring device 12a and the pressure regulating valve 12b are controlled to regulate the pressure of the heat transfer gas to the above set value.
【００４０】例えば、被処理基板４の裏面の表面積が15
2 ×3.14ｃｍ2 である場合、いま、被処理基板４の剪断
応力限界以下の設定値とした20ｋｇｆを上記表面積で除
算すると、単位面積当たりの静電吸着力を算出できる。
ここで、１ｋｇｆ／ｃｍ2 ＝760 Ｔｏｒｒであるから、
20ｋｇｆ／（152 ×3.14ｃｍ2 ）×７６０＝21.5Ｔｏｒ
ｒとなる。すなわち、基板冷却制御部２８は、圧力測定
器１２ａの測定値が上記の検出データに基づき算出した
21.5Ｔｏｒｒの圧力値になるよう圧力調整バルブ１２ｂ
および流量コントローラ１１ａを制御する。これによ
り、被処理基板４と基板保持台３との隙間に供給された
伝熱ガスの圧力は21.5Ｔｏｒｒに調圧される。For example, the surface area of the back surface of the substrate 4 to be processed is 15
In the case of 2 × 3.14 cm 2 , the electrostatic attraction force per unit area can be calculated by dividing the above surface area by 20 kgf, which is a set value below the shear stress limit of the substrate 4 to be processed.
Here, since 1 kgf / cm 2 = 760 Torr,
20kgf / (15 2 × 3.14cm 2 ) × 760 = 21.5Torr
r. That is, the substrate cooling control unit 28 calculates the measurement value of the pressure measuring device 12a based on the above detection data.
Pressure adjusting valve 12b to obtain a pressure value of 21.5 Torr
And controls the flow controller 11a. As a result, the pressure of the heat transfer gas supplied to the gap between the processing target substrate 4 and the substrate holding table 3 is adjusted to 21.5 Torr.
【００４１】上記状態において、制御手段２１は突き上
げ機構１９を再び上昇させるよう制御する。この場合
は、流動性が極めて良好なヘリウムガスからなる伝熱ガ
スが被処理基板４と基板保持台３との隙間に流入してい
くので、被処理基板４の裏面全体を伝熱ガスの高い圧力
による均等な押圧力で押すことと同様の動作となり、そ
の押圧力は、被処理基板４を破損させない範囲内で可及
的に大きく設定されたものである。そのため、被処理基
板４には、これの中央部のみを突き上げ機構１９の突き
上げピン１９ａで突き上げる場合に比較して突き上げ力
が格段に効果的、且つ効率的に作用する。その上に、基
板保持台３のアルミナ誘電体部２９と被処理基板４との
間の残留電荷は、可及的に高圧に調圧された伝熱ガスを
媒体として電気的に速やかに中和される。この結果、被
処理基板４と基板保持台３との静電吸着力が一挙に減少
するので、被処理基板４は極めて迅速、且つ円滑に基板
保持台３から剥離されて、トラブルなく安定に次工程に
搬送され、スループットの向上が可能となる。In the above state, the control means 21 controls the push-up mechanism 19 to move up again. In this case, since the heat transfer gas made of helium gas having extremely good fluidity flows into the gap between the substrate 4 to be processed and the substrate holding table 3, the entire back surface of the substrate 4 to be processed has high heat transfer gas. The operation is the same as pressing with a uniform pressing force by pressure, and the pressing force is set as large as possible without damaging the substrate 4 to be processed. Therefore, the pushing force acts on the substrate 4 to be processed much more effectively and efficiently as compared with the case where only the center portion of the substrate 4 is pushed up by the pushing pin 19a of the pushing mechanism 19. In addition, the residual charge between the alumina dielectric portion 29 of the substrate holding table 3 and the substrate 4 to be processed is quickly and electrically neutralized by using a heat transfer gas regulated as high as possible as a medium. Is done. As a result, the electrostatic attraction force between the processing target substrate 4 and the substrate holding base 3 is reduced at a stroke, and the processing target substrate 4 is peeled off from the substrate holding base 3 very quickly and smoothly, so that the next processing can be performed stably without any trouble. It is transported to the process, and the throughput can be improved.
【００４２】これに対し、図２の真空処理装置では、制
御手段２１の制御によって突き上げ機構１９が上昇およ
び下降を繰り返して被処理基板４を突き上げピン１９ａ
で断続的に突き上げるだけであるから、基板保持台３に
残留電荷で吸着保持されている被処理基板４は、突き上
げ機構１９の突き上げピン１９ａが接触する部分を基板
保持台３から少しずつ剥離されたのちに、この剥離が徐
々に周囲に拡げられていき、被処理基板４の基板保持台
３に対する接触面積も徐々に減少していく。したがっ
て、被処理基板４は無理な突き上げ力を受けることなく
確実に剥離されるものの、剥離され終わるまでに相当の
時間を要することになる。On the other hand, in the vacuum processing apparatus shown in FIG. 2, the push-up mechanism 19 repeatedly moves up and down under the control of the control means 21 to push up the substrate 4 to be processed.
The substrate to be processed 4 which is sucked and held by the substrate holder 3 with the residual charge is separated from the substrate holder 3 little by little at the portion where the push-up pins 19a of the push-up mechanism 19 contact. Thereafter, the separation gradually spreads to the periphery, and the contact area of the substrate 4 to be processed with the substrate holder 3 also gradually decreases. Therefore, although the substrate to be processed 4 is surely peeled off without receiving an excessive pushing force, a considerable time is required until the peeling is completed.
【００４３】また、上記実施の形態では、検出手段２０
による検出データが剪断応力限界に近い所定値に達した
と判定部２１ｂが判別した時点で、伝熱ガスの供給を開
始して、その伝熱ガスの圧力を、上記検出データに基づ
いて基板冷却制御部２８が算出した設定値になるよう制
御するようにしたが、検出手段２０による検出データが
初期設定値つまり静電吸着力が発生していないときの外
力の値を超えた時点から、伝熱ガスの供給を開始して、
その伝熱ガスの圧力を、検出データと初期設定値との差
に相当する値になるようフィードバック制御するように
してもよい。この場合には、被処理基板４と基板保持台
３との静電吸着力を可及的早期の時点で効果的に減少さ
せて、被処理基板４の基板保持台３からの剥離を一層迅
速に行うことが可能となる。In the above embodiment, the detecting means 20
When the determination unit 21b determines that the data detected by the sensor reaches a predetermined value close to the shear stress limit, the supply of the heat transfer gas is started, and the pressure of the heat transfer gas is reduced based on the detection data. The control unit 28 performs control so that the set value is calculated. However, from the time when the data detected by the detection unit 20 exceeds the initial set value, that is, the value of the external force when the electrostatic attraction force is not generated, the transmission is started. Start supplying hot gas,
Feedback control may be performed so that the pressure of the heat transfer gas becomes a value corresponding to the difference between the detection data and the initial set value. In this case, the electrostatic attraction between the substrate to be processed 4 and the substrate holder 3 is effectively reduced as early as possible, so that the substrate to be processed 4 can be separated from the substrate holder 3 more quickly. Can be performed.
【００４４】なお、上記実施の形態では、真空処理装置
として、反応性イオンエッチング型のドライエッチング
装置を例示して説明したが、プラズマの発生手段はこれ
に限られるものではなく、誘導結合型、ＥＣＲ型、ヘリ
コン型または表面波型などのプラズマ発生手段を備えた
ものにも適用できる。In the above-described embodiment, a reactive ion etching type dry etching apparatus has been described as an example of the vacuum processing apparatus. However, the plasma generating means is not limited to this, but may be an inductive coupling type. The present invention can also be applied to a device having a plasma generating means such as an ECR type, a helicon type or a surface wave type.
【００４５】また、ドライエッチング装置に代えて、プ
ラズマＣＶＤ装置やスパッタリング装置あるいはアッシ
ング装置などにも本発明を有効に適用できる。さらに、
被処理基板４を静電吸着する基板保持台３の静電吸着電
極は、正極および負極を用いる双極型のものを例示した
が、これに代えて、単極型のものを用いることもでき
る。The present invention can be effectively applied to a plasma CVD apparatus, a sputtering apparatus, an ashing apparatus, or the like instead of the dry etching apparatus. further,
As the electrostatic chucking electrode of the substrate holding table 3 for electrostatically holding the substrate 4 to be processed, a bipolar type using a positive electrode and a negative electrode has been exemplified, but a monopolar type may be used instead.
【００４６】また、伝熱ガスとしては、ヘリウムガス以
外の不活性ガス或いは他のガスを用いることもできる。
さらに、伝熱ガスの配管系統は上記実施の形態の系統に
限られるものではなく、被処理基板４と基板保持台３と
の間にガスを供給できる配管系統であればよい。さらに
また、上記実施の形態では、静電吸着型の基板保持台３
を用いた場合について説明したが、接地或いは高周波電
力が印加される基板保持台であっても、絶縁材料の被処
理基板の場合には特に残留電荷による吸着に起因する搬
送トラブルが発生するので、このような場合にも本発明
を適用して同様の効果を得ることができる。As the heat transfer gas, an inert gas other than helium gas or another gas may be used.
Further, the piping system of the heat transfer gas is not limited to the system of the above-described embodiment, but may be any piping system that can supply gas between the substrate 4 to be processed and the substrate holder 3. Furthermore, in the above embodiment, the electrostatic chuck type substrate holding table 3
Although the description has been given of the case where the substrate is used, even in the case of a substrate holding table to which grounding or high-frequency power is applied, particularly in the case of a substrate to be processed with an insulating material, a transport trouble due to adsorption by residual charges occurs, In such a case, the same effect can be obtained by applying the present invention.
【００４７】[0047]
【発明の効果】以上のように、本発明の真空処理装置の
基板取り外し制御方法によれば、被処理基板の突き上げ
負荷に基づいて被処理基板と基板保持台との静電吸着力
を検出して、その検出値が所定値以上であるときに、突
き上げ力が被処理基板の剪断応力限界に達する以前に突
き上げ動作を停止させて、被処理基板と基板保持台との
隙間に再び伝熱ガスを供給して所定の圧力に調圧するよ
うにしたので、被処理基板と基板保持台との隙間に流入
した伝熱ガスの圧力で被処理基板の裏面全体を被処理基
板を破損させない押圧力で均等に押し上げるので、被処
理基板には、その全面に対し突き上げ力が格段に効果
的、且つ効率的に作用するとともに、残留電荷が伝熱ガ
スを媒体として電気的に速やかに中和され、被処理基板
と基板保持台との静電吸着力を一挙に減少させて被処理
基板を極めて迅速、且つ円滑に基板保持台から剥離さ
せ、トラブルなく安定に次工程に搬送できる。As described above, according to the substrate removal control method of the vacuum processing apparatus of the present invention, the electrostatic attraction force between the substrate to be processed and the substrate holder is detected based on the thrust load of the substrate to be processed. When the detected value is equal to or greater than a predetermined value, the thrusting operation is stopped before the thrust reaches the shear stress limit of the substrate to be processed, and the heat transfer gas is again transferred to the gap between the substrate to be processed and the substrate holding table. Is supplied to regulate the pressure to a predetermined pressure, so that the entire back surface of the substrate to be processed is pressed by the pressure of the heat transfer gas flowing into the gap between the substrate to be processed and the substrate holding table so as not to damage the substrate to be processed. Since the substrate is pushed up evenly, the pushing-up force acts on the entire surface of the substrate extremely effectively and efficiently, and the residual charges are quickly neutralized electrically using the heat transfer gas as a medium. Static between processing substrate and substrate holder It reduces the suction force at once substrate to be processed very quickly and smoothly is peeled from the substrate holder, can be conveyed to the trouble with no stable next step.
【００４８】また、本発明の真空処理装置によれば、検
出手段が突き上げ機構の被処理基板に対する突き上げ負
荷に基づいて被処理基板と基板保持台との静電吸着力を
検出する検出手段と、検出手段の検出値が所定値以上で
あるときに、突き上げ力が被処理基板の剪断応力限界に
達する以前に突き上げ機構の突き上げ動作を停止させる
よう制御する制御手段と、制御手段からのデータに基づ
いて伝熱ガス供給手段を制御して被処理基板と基板保持
台との隙間に再び伝熱ガスを供給させ、且つガス圧力調
整機構を制御して所定の圧力に調圧させる基板冷却制御
部とを備えた構成としたので、本発明の基板取り外し制
御方法を確実に具現化して同様の効果を得ることがてき
る。Further, according to the vacuum processing apparatus of the present invention, the detecting means detects the electrostatic attraction force between the substrate to be processed and the substrate holder based on the thrust load of the thrust mechanism on the substrate to be processed, When the detection value of the detection means is equal to or more than a predetermined value, the control means controls to stop the thrusting operation of the thrust mechanism before the thrust force reaches the shear stress limit of the substrate to be processed, and based on data from the control means. A substrate cooling controller for controlling the heat transfer gas supply means to supply the heat transfer gas again to the gap between the substrate to be processed and the substrate holding table, and controlling the gas pressure adjusting mechanism to regulate the pressure to a predetermined pressure; Therefore, the same effect can be obtained by reliably realizing the board removal control method of the present invention.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の基板取り外し制御方法を適用できる真
空処理装置を示す断面構成図。FIG. 1 is a cross-sectional configuration diagram showing a vacuum processing apparatus to which a substrate removal control method of the present invention can be applied.
【図２】従来の真空処理装置を示す断面構成図。FIG. 2 is a cross-sectional configuration diagram showing a conventional vacuum processing apparatus.
１ 真空容器 ２ 真空排気手段 ３ 基板保持台 ４ 被処理基板 １１ 伝熱ガス供給手段 １２ ガス圧力調整機構 １３ 反応ガス供給手段 １９ 突き上げ機構 ２０ 検出手段 ２１ 制御手段 ２８ 基板冷却制御部 Ｘ 駆動力伝達軸線（突き上げ力伝達部） DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Vacuum exhaust means 3 Substrate holding stand 4 Substrate to be processed 11 Heat transfer gas supply means 12 Gas pressure adjustment mechanism 13 Reaction gas supply means 19 Push-up mechanism 20 Detecting means 21 Control means 28 Substrate cooling control part X Driving force transmission axis (Thrust force transmission section)
Claims (4)
被処理基板と前記基板保持台との間に基板温度制御用の
伝熱ガスを供給しながら前記被処理基板に対し表面処理
を行ったのち、その表面処理に伴って前記被処理基板に
生じた帯電による前記被処理基板と前記基板保持台との
静電吸着力を、前記被処理基板を突き上げた時の突き上
げ負荷に基づいて検出し、 その検出値が所定値以上であるとき、突き上げ力が前記
被処理基板の剪断応力限界に達する以前に突き上げ動作
を停止するとともに、前記伝熱ガスを前記被処理基板と
前記基板保持台の間に再度供給して所定の圧力としたの
ち、 前記突き上げ力と前記伝熱ガスの圧力とを前記検出値に
基づきフィードバック制御して前記被処理基板を前記基
板保持台から剥離させることを特徴とする真空処理装置
の基板取り外し制御方法。1. A surface treatment is performed on a substrate to be processed while supplying a heat transfer gas for controlling a substrate temperature between the substrate to be processed held on a substrate holding table in a vacuum vessel and the substrate holding table. After performing, the electrostatic attraction force between the substrate to be processed and the substrate holding table due to the charge generated on the substrate to be processed due to the surface treatment, based on the thrust load when the substrate to be processed is thrust up. When the detected value is equal to or more than a predetermined value, the thrusting operation is stopped before the thrust force reaches the shear stress limit of the processing target substrate, and the heat transfer gas is transferred to the processing target substrate and the substrate holding table. After the pressure is again supplied during the predetermined time, the pushing-up force and the pressure of the heat transfer gas are feedback-controlled based on the detected value to peel the substrate to be processed from the substrate holding table. To be Substrate removal control method of the air treatment apparatus.
とき、突き上げ力が剪断応力限界以下の設定値に達した
時点で突き上げ動作を停止するとともに、伝熱ガスの圧
力を、前記検出値から算出した値に調圧するようにした
請求項１に記載の真空処理装置の基板取り外し制御方
法。2. When the electrostatic attraction force of the detected value is equal to or higher than a predetermined value, the thrusting operation is stopped when the thrusting force reaches a set value equal to or less than a shear stress limit, and the pressure of the heat transfer gas is reduced. 2. The method according to claim 1, wherein the pressure is adjusted to a value calculated from the detected value.
荷に基づいて検出した検出値が、静電吸着が生じていな
い状態で突き上げ機構に加わる外力に対応した初期設定
値を超えた時点で、伝熱ガスの供給を開始するととも
に、前記伝熱ガスの圧力を前記検出値と前記初期設定値
の差の圧力に調圧するようにした請求項１に記載の真空
処理装置の基板取り外し制御方法。3. When a detection value detected based on a thrust load when the target substrate is thrust exceeds an initial set value corresponding to an external force applied to the thrust mechanism in a state where no electrostatic attraction occurs, 2. The method according to claim 1, wherein the supply of the heat transfer gas is started and the pressure of the heat transfer gas is adjusted to a pressure corresponding to a difference between the detected value and the initial set value.
気する真空排気手段および反応ガスを内部に導入する反
応ガス供給手段を有する真空容器と、 前記被処理基板の表面処理の終了時に前記基板保持台の
上面に静電吸着している前記被処理基板を突き上げる突
き上げ機構と、 前記突き上げ機構の突き上げ力伝達部に設けられ、前記
突き上げ機構による突き上げ負荷を前記被処理基板と前
記基板保持台との静電吸着力に関するデータとして検出
する検出手段と、 前記基板保持台と前記被処理基板との間に基板温度制御
用の伝熱ガスを供給する伝熱ガス供給手段と、 前記伝熱ガスの圧力を制御するガス圧力調整機構と、 前記検出手段の検出値が所定値以上であるときに、前記
検出値に基づき前記突き上げ機構に対しその突き上げ動
作を規制するようフィードバック制御する制御手段と、 前記被処理基板の表面処理の終了時に前記制御手段から
入力されるデータに基づき前記伝熱ガス供給手段と前記
ガス圧力調整機構とをフィードバック制御する基板冷却
制御部とを備えていることを特徴とする真空処理装置。4. A vacuum vessel having a substrate holding table for a substrate to be processed, a vacuum exhaust means for evacuating the inside and a reaction gas supply means for introducing a reaction gas into the inside, and A push-up mechanism that pushes up the substrate to be processed, which is electrostatically adsorbed on the upper surface of the substrate holding table; and a push-up force transmitting unit of the push-up mechanism, which applies the push-up load by the push-up mechanism to the substrate to be processed and the substrate holding table. Detection means for detecting as data relating to electrostatic attraction force of the substrate; heat transfer gas supply means for supplying a heat transfer gas for controlling a substrate temperature between the substrate holding table and the substrate to be processed; A gas pressure adjusting mechanism for controlling the pressure of the gas, and, when a detection value of the detection means is equal to or more than a predetermined value, restricting the thrust operation of the thrust mechanism based on the detected value. Control means for performing such feedback control, and a substrate cooling control section for performing feedback control of the heat transfer gas supply means and the gas pressure adjusting mechanism based on data input from the control means at the end of the surface treatment of the substrate to be processed, A vacuum processing apparatus comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP193199A JP4064557B2 (en) | 1999-01-07 | 1999-01-07 | Substrate removal control method for vacuum processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP193199A JP4064557B2 (en) | 1999-01-07 | 1999-01-07 | Substrate removal control method for vacuum processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000200825A true JP2000200825A (en) | 2000-07-18 |
| JP4064557B2 JP4064557B2 (en) | 2008-03-19 |
Family
ID=11515364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP193199A Expired - Fee Related JP4064557B2 (en) | 1999-01-07 | 1999-01-07 | Substrate removal control method for vacuum processing apparatus |
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| Country | Link |
|---|---|
| JP (1) | JP4064557B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007108366A1 (en) * | 2006-03-22 | 2007-09-27 | Tokyo Electron Limited | Plasma processing apparatus |
| CN100468132C (en) * | 2006-02-16 | 2009-03-11 | 株式会社未来视野 | Charge neutralizer for glass substrate |
| JP2010109390A (en) * | 2003-12-15 | 2010-05-13 | Asml Netherlands Bv | Lithographic device and manufacturing method therefor |
| JP2010272709A (en) * | 2009-05-22 | 2010-12-02 | Tokyo Electron Ltd | Substrate processing apparatus, substrate detaching method and program |
| JP2012222240A (en) * | 2011-04-12 | 2012-11-12 | Tokyo Electron Ltd | Substrate holding device, substrate processing device, substrate processing method, and computer readable recording medium with substrate processing program recorded |
| JP2015216390A (en) * | 2009-01-16 | 2015-12-03 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Substrate support with gas introduction opening |
| CN111317581A (en) * | 2020-02-27 | 2020-06-23 | 耿风堂 | Working method and system of equipment for cleaning operation wound |
| EP3832391A1 (en) * | 2019-12-03 | 2021-06-09 | ASML Netherlands B.V. | Clamp assembly |
| WO2024139767A1 (en) * | 2022-12-25 | 2024-07-04 | 北京屹唐半导体科技股份有限公司 | Wafer stage, reaction chamber and wafer etching device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04100255A (en) * | 1990-08-18 | 1992-04-02 | Fujitsu Ltd | Semiconductor manufacturing device |
| JPH05129421A (en) * | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | Electrostatic chuck |
| JPH0927541A (en) * | 1995-07-10 | 1997-01-28 | Nikon Corp | Substrate holder |
| JPH10163308A (en) * | 1997-11-04 | 1998-06-19 | Hitachi Ltd | Plasma treating method and apparatus therefor |
-
1999
- 1999-01-07 JP JP193199A patent/JP4064557B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04100255A (en) * | 1990-08-18 | 1992-04-02 | Fujitsu Ltd | Semiconductor manufacturing device |
| JPH05129421A (en) * | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | Electrostatic chuck |
| JPH0927541A (en) * | 1995-07-10 | 1997-01-28 | Nikon Corp | Substrate holder |
| JPH10163308A (en) * | 1997-11-04 | 1998-06-19 | Hitachi Ltd | Plasma treating method and apparatus therefor |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010109390A (en) * | 2003-12-15 | 2010-05-13 | Asml Netherlands Bv | Lithographic device and manufacturing method therefor |
| CN100468132C (en) * | 2006-02-16 | 2009-03-11 | 株式会社未来视野 | Charge neutralizer for glass substrate |
| WO2007108366A1 (en) * | 2006-03-22 | 2007-09-27 | Tokyo Electron Limited | Plasma processing apparatus |
| US8394230B2 (en) | 2006-03-22 | 2013-03-12 | Tokyo Electron Limited | Plasma processing apparatus |
| JP2015216390A (en) * | 2009-01-16 | 2015-12-03 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Substrate support with gas introduction opening |
| JP2010272709A (en) * | 2009-05-22 | 2010-12-02 | Tokyo Electron Ltd | Substrate processing apparatus, substrate detaching method and program |
| JP2012222240A (en) * | 2011-04-12 | 2012-11-12 | Tokyo Electron Ltd | Substrate holding device, substrate processing device, substrate processing method, and computer readable recording medium with substrate processing program recorded |
| EP3832391A1 (en) * | 2019-12-03 | 2021-06-09 | ASML Netherlands B.V. | Clamp assembly |
| WO2021110336A1 (en) * | 2019-12-03 | 2021-06-10 | Asml Netherlands B.V. | Clamp assembly |
| CN111317581A (en) * | 2020-02-27 | 2020-06-23 | 耿风堂 | Working method and system of equipment for cleaning operation wound |
| WO2024139767A1 (en) * | 2022-12-25 | 2024-07-04 | 北京屹唐半导体科技股份有限公司 | Wafer stage, reaction chamber and wafer etching device |
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