JPH0397664A - 還元再酸化型半導体コンデンサ用磁器組成物 - Google Patents

Info

Publication number

JPH0397664A

JPH0397664A JP1233123A JP23312389A JPH0397664A JP H0397664 A JPH0397664 A JP H0397664A JP 1233123 A JP1233123 A JP 1233123A JP 23312389 A JP23312389 A JP 23312389A JP H0397664 A JPH0397664 A JP H0397664A

Authority

JP

Japan

Prior art keywords

reduction

type semiconductor

semiconductor capacitor

compsn

breakdown voltage

Prior art date

1989-09-09

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

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• 239000003990 capacitor Substances 0.000 title claims abstract description 14
• 239000004065 semiconductor Substances 0.000 title claims abstract description 12
• 238000010405 reoxidation reaction Methods 0.000 title claims abstract description 8
• 239000000203 mixture Substances 0.000 title claims description 11
• 229910052573 porcelain Inorganic materials 0.000 title abstract description 3
• 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 5
• 239000000919 ceramic Substances 0.000 claims description 3
• 230000015556 catabolic process Effects 0.000 abstract description 15
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
• 229910002113 barium titanate Inorganic materials 0.000 abstract description 3
• 229910052681 coesite Inorganic materials 0.000 abstract description 3
• 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
• 229910052682 stishovite Inorganic materials 0.000 abstract description 3
• 229910052905 tridymite Inorganic materials 0.000 abstract description 3
• GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
• 239000011656 manganese carbonate Substances 0.000 abstract 2
• 235000006748 manganese carbonate Nutrition 0.000 abstract 2
• 229910000016 manganese(II) carbonate Inorganic materials 0.000 abstract 2
• 239000000377 silicon dioxide Substances 0.000 abstract 2
• 235000012239 silicon dioxide Nutrition 0.000 abstract 2
• 229910021523 barium zirconate Inorganic materials 0.000 abstract 1
• PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 abstract 1
• 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
• PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
• 230000007423 decrease Effects 0.000 description 8
• 230000000694 effects Effects 0.000 description 7
• 238000009413 insulation Methods 0.000 description 4
• 239000000463 material Substances 0.000 description 2
• 239000011230 binding agent Substances 0.000 description 1
• 239000002131 composite material Substances 0.000 description 1
• 230000006866 deterioration Effects 0.000 description 1
• 238000001035 drying Methods 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 239000002994 raw material Substances 0.000 description 1