JPH039609B2 - - Google Patents

Info

Publication number
JPH039609B2
JPH039609B2 JP60095587A JP9558785A JPH039609B2 JP H039609 B2 JPH039609 B2 JP H039609B2 JP 60095587 A JP60095587 A JP 60095587A JP 9558785 A JP9558785 A JP 9558785A JP H039609 B2 JPH039609 B2 JP H039609B2
Authority
JP
Japan
Prior art keywords
gas
gas ejection
ejection plate
pedestal
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60095587A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61253822A (ja
Inventor
Yasuhiro Ishii
Yoshimoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP60095587A priority Critical patent/JPS61253822A/ja
Publication of JPS61253822A publication Critical patent/JPS61253822A/ja
Publication of JPH039609B2 publication Critical patent/JPH039609B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3418—
    • H10P14/24—
    • H10P14/3421—
JP60095587A 1985-05-07 1985-05-07 化合物半導体薄膜の製造装置 Granted JPS61253822A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60095587A JPS61253822A (ja) 1985-05-07 1985-05-07 化合物半導体薄膜の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60095587A JPS61253822A (ja) 1985-05-07 1985-05-07 化合物半導体薄膜の製造装置

Publications (2)

Publication Number Publication Date
JPS61253822A JPS61253822A (ja) 1986-11-11
JPH039609B2 true JPH039609B2 (show.php) 1991-02-08

Family

ID=14141712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60095587A Granted JPS61253822A (ja) 1985-05-07 1985-05-07 化合物半導体薄膜の製造装置

Country Status (1)

Country Link
JP (1) JPS61253822A (show.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275686A (en) * 1991-09-25 1994-01-04 University Of New Mexico Radial epitaxial reactor for multiple wafer growth
US11486038B2 (en) 2019-01-30 2022-11-01 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
TWI861210B (zh) 2019-09-09 2024-11-11 美商應用材料股份有限公司 輸送反應氣體之處理系統與方法

Also Published As

Publication number Publication date
JPS61253822A (ja) 1986-11-11

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