JPH0395893A - Manufacture of phosphor thin film and thin film electroluminescent element - Google Patents
Manufacture of phosphor thin film and thin film electroluminescent elementInfo
- Publication number
- JPH0395893A JPH0395893A JP1232531A JP23253189A JPH0395893A JP H0395893 A JPH0395893 A JP H0395893A JP 1232531 A JP1232531 A JP 1232531A JP 23253189 A JP23253189 A JP 23253189A JP H0395893 A JPH0395893 A JP H0395893A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- alkaline earth
- earth metal
- less
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 48
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 13
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 claims abstract description 7
- 239000012298 atmosphere Substances 0.000 claims abstract description 7
- -1 alkaline earth metal sulfide Chemical class 0.000 claims abstract description 5
- 230000008020 evaporation Effects 0.000 claims abstract description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 19
- 229910052717 sulfur Inorganic materials 0.000 claims description 19
- 239000011593 sulfur Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000427 thin-film deposition Methods 0.000 claims description 10
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 6
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 239000011575 calcium Substances 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 7
- 239000012212 insulator Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 241000208140 Acer Species 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 101100059600 Caenorhabditis elegans cec-1 gene Proteins 0.000 description 1
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 description 1
- BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明１＊ＥＬ素子用硫化物蛍光体薄膜に関するもので
あり、とりわＣナ、発光輝嵐 効率が優れたカラーＥＬ
用硫化物蛍光体薄膜の製造方法およびそれを用いた薄膜
ＥＬ素子に関するものであも従来の技術
近抵 コンピュータ端末などに用いるフラットディス
プレイとして、薄膜ＥＬ素子が盛んに研究されていも
黄橙色発光のマンガン添加硫化亜鉛からなる蛍光体薄膜
を用いたモノクロ薄膜ＥＬディスプレイは既に実用化さ
れていも
ディスプレイとしての広汎な用途に対応するためにはカ
ラー化が必要不可欠であり、赤色 緑色青色の３原色に
発光するＥＬ用蛍光体の開発に多大の力が注がれている
。この中で青色発光蛍光体としては ＳｒＳ：Ｃｅ、赤
色発光蛍光体としてはＣａＳ：Ｅｕ、緑色発光蛍光体と
してはＣａＳ：Ｃｅなど、アルカリ土類金属硫化物から
なる蛍光体が盛んに研究されている。[Detailed Description of the Invention] Industrial Field of Application The present invention 1* relates to a sulfide phosphor thin film for EL devices, especially color EL with excellent luminescence efficiency.
Regarding manufacturing methods of sulfide phosphor thin films for use in sulfide phosphors and thin film EL devices using the same, conventional technology is not yet available. Although monochrome thin-film EL displays using phosphor thin films made of manganese-doped zinc sulfide have already been put into practical use, colorization is essential to support a wide range of uses as displays, and the three primary colors of red, green, and blue have been developed. Much effort is being put into developing phosphors for EL that emit light. Among these, phosphors made of alkaline earth metal sulfides are being actively researched, such as SrS:Ce as a blue-emitting phosphor, CaS:Eu as a red-emitting phosphor, and CaS:Ce as a green-emitting phosphor. There is.
発明が解決しようとする課題
これらの赤色 緑色 青色の３原色に発光するアルカリ
土類金属硫化物からなる蛍光体薄膜は発光輝度 効率が
不十分であり、現在 実用的なカラーＥＬパネルは形成
されていな鶏
本発明はアルカリ土類硫化物を主成分とする蛍光体薄膜
を再現性よく製造できる製造方法と、性能の優れた薄膜
ＥＬ素子を提供することを目的とする。Problems to be Solved by the Invention Phosphor thin films made of alkaline earth metal sulfides that emit light in the three primary colors of red, green, and blue have insufficient luminance efficiency, and currently no practical color EL panels have been formed. An object of the present invention is to provide a method for manufacturing a phosphor thin film containing alkaline earth sulfide as a main component with good reproducibility, and a thin film EL device with excellent performance.
課題を解決するための手段
少なくともアルカリ土類金属あるいはアルカリ土類金属
のハロゲン化物と、発光不純物あるいは発光不純物の化
合物とを、硫黄あるいは硫黄を含むガス雰囲気中で蒸発
させることにより基板上にアルカリ土類金属硫化物を主
成分とする薄膜を形成する蛍光体薄膜の製造方法におい
て、薄膜堆積中の硫黄あるいは硫黄を含むガスの圧力を
３ｘｌＯ −６Ｔｏｒｒ以上 ３ ｘ １ ０−６Ｔｏ
ｒｒ以下とし、 基板温度を４００℃以上 ７００℃以
下とし 薄膜堆積速度を５ｎｒｎ／ｍｉｎ以上 ４０ｎ
ｍ／ｍｉｎ以下として形成する蛍光体薄膜の製造方汰
およびこの製造方法で形成された蛍光体薄膜の少なくと
も一方の面に誘電体薄膜が形威され さらにその外側か
ら電圧を印加する手段が配設されている薄膜ＥＬ素子に
よって、上記課題を解決するものである。Means for Solving the Problems Alkaline earth metal or alkaline earth metal halide and luminescent impurity or luminescent impurity compound are evaporated in sulfur or a gas atmosphere containing sulfur to form an alkaline earth metal on a substrate. In a method for manufacturing a phosphor thin film that forms a thin film mainly composed of similar metal sulfides, the pressure of sulfur or sulfur-containing gas during thin film deposition is set to 3xlO -6Torr or more.
rr or less, the substrate temperature is 400°C or more and 700°C or less, and the thin film deposition rate is 5nrn/min or more 40n.
Manufacturing method of phosphor thin film formed at m/min or less
The above-mentioned problems are solved by a thin film EL element in which a dielectric thin film is formed on at least one surface of a phosphor thin film formed by this manufacturing method, and a means for applying a voltage from the outside is provided. It is.
作用
アルカリ土類金属あるいはアルカリ土類金属のハロゲン
化物と、発光不純物あるいは発光不純物の化合物とを、
硫黄あるいは硫黄を含むガス雰囲気中で蒸発させること
により基板上にアルカリ土類金属硫化物を主成分とする
薄膜を形戒する蛍光体薄膜の製造方法において、薄膜堆
積中の硫黄あるいは硫黄を含むガスの圧九 基板温度お
よび薄膜堆積速度を特定の条件に限定することにより、
結晶性、配向怯 ストイキオメトリ即ち化学量論性がＥ
Ｌ用蛍光体薄膜としての優れた特性を発揮できる状態に
なったためと考えられも
実施例
第１図に本発明のＥＬ素子の一実施例を説明するための
素子構造を示も ガラス基板１上にスパッタリング法に
より厚さ３００ｎｍのＩＴＯ薄膜からなる透明電極２を
形成し１， その上番ｔ 酸素を１０％含むアルゴン
雰囲気＋ｉ ４５０℃の基板温度でチタン酸ストロン
チウム（ＳｒＴｉＯｓ） ヲｒ ｆスパッタリングする
ことにより、厚さ５００ｎｍの第１絶縁体層３を形成し
た
第１絶縁体層３の上に（よ 基板温度５００℃で、８Ｘ
１０”６Ｔｏｒｒの硫化水素（Ｈａｓ）ガス雰囲気中
で金属ストロンチウム（Ｓｒ）’と、発光不純物を含む
化合物である塩化セリウム（ＣｅＣ１ｇ）とを、別々の
蒸発源から同時に蒸発させることにより、厚さ６００ｎ
ｍの蛍光体薄膜４を形成し九 このとき、蒸発源の温度
をそれぞれ５３０℃および７２０℃に保つことにより０
．２原子％のＣｅを含む３ｒＳ薄膜が再現性よく形戒で
きた
その上に 酸素をｌＯ％含むアルゴン雰囲気屯室温でタ
ンタル酸バリウム（ ＢａＴａｅＯ●）をｒｆスパッタ
リングすることにより、厚さ２００ｎｍの第２絶縁体層
５を形成した
最後に厚さ２５０ｎｍのＡ１からなる背面電極６を形戒
することによりＥＬ素子を完或しｆＱ，本発明のＥＬ素
子（よ パルス幅３０μｓ， １ｋＨｚの交流電圧を
印加することにより、緑青色で６００ｃｄ／ｍ２の発光
輝度が再現性よく得られ１，第２図は基板温度を５５０
ａ 薄膜堆積速度を２０ｎｍ／ｍｉｎとしたときＱＥＬ
発光強度の硫化水素ガス圧力依存性を示づ； 第２図よ
り３×１ ０ −６Ｔｏｒｒ以上 ３ Ｘ １ ０ −
６Ｔｏｒｒ以下の圧力領域で発光強度の高いＥＬ素子が
得られることがわかる。an alkaline earth metal or an alkaline earth metal halide and a luminescent impurity or a compound of luminescent impurities,
In a method for producing a phosphor thin film in which a thin film mainly composed of alkaline earth metal sulfides is formed on a substrate by evaporation in an atmosphere of sulfur or a gas containing sulfur, sulfur or a gas containing sulfur is used during thin film deposition. By limiting the substrate temperature and thin film deposition rate to specific conditions,
Crystallinity, orientational stoichiometry, stoichiometry is E
This is thought to be due to the state in which it is now in a state where it can exhibit excellent characteristics as a phosphor thin film for L. A transparent electrode 2 made of an ITO thin film with a thickness of 300 nm is formed by a sputtering method, and strontium titanate (SrTiOs) is sputtered on top of the electrode in an argon atmosphere containing 10% oxygen at a substrate temperature of 450°C. The first insulator layer 3 with a thickness of 500 nm was formed on the first insulator layer 3 (with a substrate temperature of 500°C, 8X
By simultaneously evaporating metal strontium (Sr)' and cerium chloride (CeC 1 g), a compound containing luminescent impurities, from separate evaporation sources in a hydrogen sulfide (Has) gas atmosphere of 10"6 Torr, a 600 nm thick film was produced.
At this time, by keeping the temperature of the evaporation source at 530°C and 720°C, respectively,
．． A 3rS thin film containing 2 atomic % Ce was formed with good reproducibility. On top of it, barium tantalate (BaTaeO●) was RF sputtered at room temperature in an argon atmosphere containing 10 % oxygen to form a 200 nm thick second film. After forming the insulator layer 5, a back electrode 6 made of A1 with a thickness of 250 nm is formed to complete the EL element. By doing so, a green-blue emission luminance of 600 cd/m2 was obtained with good reproducibility.
a QEL when the thin film deposition rate is 20 nm/min
The dependence of the luminescence intensity on hydrogen sulfide gas pressure is shown; from Figure 2, it is 3 × 10 -6 Torr or more 3 × 10 -
It can be seen that an EL element with high emission intensity can be obtained in a pressure region of 6 Torr or less.
薄膜堆積速度は４０ｎｍ／ｍｉｎより大きいと、薄膜表
面が荒れ緻密な膜ができなかった また５ｎｍ／ｍｉｎ
より小さい場合ＩＬＥＬ発光強度が不十分であり、堆積
時間も長くかかり実用的でない。When the thin film deposition rate was higher than 40 nm/min, the thin film surface became rough and a dense film could not be formed.
If it is smaller, the ILEL emission intensity will be insufficient and the deposition time will take a long time, making it impractical.
第３図は薄膜堆積速度を２０ｎｍ／ｍｉｎとし硫化水素
ガス圧力を８ Ｘ １ ０−”ＴｏｒｒとしたときのＥ
Ｌ発光強度の基板温度依存性を示九 第３図より４００
℃以上で高輝度で発光するＥＬ素子が得られることがわ
かん ７００℃より高温の場合（よ発光輝度は高いがガ
ラス基板が変形する場合があり実際的でない。Figure 3 shows E when the thin film deposition rate is 20 nm/min and the hydrogen sulfide gas pressure is 8 x 10-”Torr.
The dependence of the L emission intensity on the substrate temperature is shown in Figure 3.
I do not know that it is possible to obtain an EL element that emits light with high brightness at temperatures above 700°C (although the luminance is high, it is not practical because the glass substrate may be deformed).
硫黄の供給源として硫黄固体を用いた場合Ｌ硫化水素ガ
スを用いたときと変わらない優れた品質の蛍光体薄膜を
形成することができた本実施例では蛍光体薄膜としてセ
リウム添加硫化ストロンチウムを用いた場合について説
明した力支 蛍光体母体として硫化カルシウムや硫化バ
リウムあるいはこれらの混晶を用ｔ，％ 発光不純物
としては希土類元魚 希土類元素のハロゲン化物や５族
元素との化合物を用いた場合も同様の特性が得られた
またアルカリ金属の供給源としてストロンチウム金属固
体を用いた場合について説明した力ｔ アルカリ金属の
塩化物やヨウ化物などのハロゲン化物を用いても同様の
効果が得られｆ．発明の効果
本発明は 少なくともアルカリ土類金属あるいはアルカ
リ土類金属のハロゲン化物と、発光不純物あるいは発光
不純物の化合物とを、硫黄あるいは硫黄を含むガス雰囲
気中で蒸発させることにより基板上にアルカリ土類金属
硫化物を主成分とする薄膜を堆積する薄膜の製造方法に
おいて、前記薄膜堆積中の前記硫黄あるいは前記硫黄を
含むガスの圧力を３×ｌ０４ＴＯｒｒ以上 ３ ｘ １
０ −６Ｔｏｒｒ以下とし 基板温度を４００℃以上
７００℃以下とし 薄膜堆積速度を５ｎｍ／ｍｉｎ以
上 ４０ｎｍ／ｍｉｎ以下とする蛍光体薄膜の製造方法
及び上記蛍光体薄膜を用いたＥＬ素子であるた取優れた
品質のアルカリ土類硫化物を主成分とする蛍光体薄膜を
再現性よく製造することができる効果があり、また こ
のような硫化物蛍光体薄膜を用いて性能の優れた薄膜Ｅ
Ｌ素子を製造することができる効果があも
したがって、とりわけアルカリ土類硫化物蛍光体薄膜を
必要とする多色ＥＬ素子やフルカラーＥＬ素子を形成す
る暇 特に実用的価値は大きし１When solid sulfur was used as the sulfur source, a phosphor thin film with the same excellent quality as when using L-hydrogen sulfide gas could be formed.In this example, cerium-doped strontium sulfide was used as the phosphor thin film. Calcium sulfide, barium sulfide, or a mixed crystal of these is used as the phosphor matrix.The luminescent impurity is a rare earth element.Also, halides of rare earth elements or compounds with group 5 elements are used. Similar characteristics were obtained
Moreover, similar effects can be obtained by using halides of alkali metals such as chlorides and iodides. Effects of the Invention The present invention provides alkaline earth metals on a substrate by evaporating at least an alkaline earth metal or an alkaline earth metal halide and a luminescent impurity or a compound of luminescent impurities in sulfur or a gas atmosphere containing sulfur. In the thin film manufacturing method of depositing a thin film containing metal sulfide as a main component, the pressure of the sulfur or the sulfur-containing gas during the thin film deposition is set to 3 x 104 TOrr or more.
0 -6 Torr or less, the substrate temperature is 400°C or more and 700°C or less, and the thin film deposition rate is 5 nm/min or more and 40 nm/min or less, and an EL device using the above phosphor thin film. It has the effect of being able to produce a phosphor thin film containing alkaline earth sulfide as a main component with high quality with good reproducibility, and it is also possible to produce a thin film E with excellent performance using such a sulfide phosphor thin film.
Therefore, the practical value is great because the effect of being able to manufacture L elements is great, especially the time needed to form multicolor EL elements or full color EL elements that require alkaline earth sulfide phosphor thin films.
第１図は本発明の一実施例のＥＬ素子の構或を説明する
断面＆ 第２図は本発明のＥＬＪｉＥ子の発光強度の硫
化水素ガス圧力依存性を示す阻 第３図は発光強度の基
板温度依存性を示す図である。
■・・・ガラス基楓 ２・・・透明電楓３・・・第ｌ絶
縁体慝 ４蛍光体薄［５・・第２絶縁体＃ ６・・・背
面電極FIG. 1 is a cross-sectional diagram illustrating the structure of an EL device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional diagram showing the hydrogen sulfide gas pressure dependence of the luminescence intensity of an EL element according to the present invention. FIG. 3 is a diagram showing substrate temperature dependence. ■...Glass base maple 2...Transparent electric maple 3...1st insulator 4. Phosphor thin material [5...2nd insulator #6...Back electrode
Claims (4)
類金属のハロゲン化物と、発光不純物あるいは発光不純
物の化合物とを、硫黄あるいは硫黄を含むガス雰囲気中
で蒸発させることにより基板上にアルカリ土類金属硫化
物を主成分とする薄膜を堆積する薄膜の製造方法におい
て、前記薄膜堆積中の前記硫黄あるいは前記硫黄を含む
ガスの圧力を３×１０＾−＾６Ｔｏｒｒ以上、３×１０
＾−＾４Ｔｏｒｒ以下とし、基板温度を４００℃以上、
７００℃以下とし、薄膜堆積速度を５ｎｍ／ｍｉｎ以、
４０ｎｍ／ｍｉｎ以下とする蛍光体薄膜の製造方法。(1) Alkaline earth metal sulfide is formed on the substrate by evaporating at least an alkaline earth metal or an alkaline earth metal halide and a luminescent impurity or a compound of luminescent impurities in sulfur or a gas atmosphere containing sulfur. In the thin film manufacturing method of depositing a thin film mainly composed of
^-^4Torr or less, substrate temperature 400℃ or more,
The temperature is 700°C or less, and the thin film deposition rate is 5 nm/min or more.
A method for producing a phosphor thin film at a rate of 40 nm/min or less.
、バリウム、あるいはこれらの内２種以上からなる請求
項１に記載の蛍光体薄膜の製造方法。(2) The method for producing a phosphor thin film according to claim 1, wherein the alkaline earth metal is calcium, strontium, barium, or two or more of these.
記載の蛍光体薄膜の製造方法。(3) The method for producing a phosphor thin film according to claim 1, wherein the sulfur-containing gas is hydrogen sulfide gas.
類金属のハロゲン化物と、発光不純物あるいは発光不純
物の化合物とを、硫黄あるいは硫黄を含むガスの圧力が
３×１０＾−＾５Ｔｏｒｒ以上３×１０＾−＾４Ｔｏｒ
ｒ以下の雰囲気中で、基板温度が４００℃以上７００℃
以下で、堆積速度を５ｎｍ／ｍｉｎ以上４０ｎｍ／ｍｉ
ｎ以下で蒸発して形成された蛍光体薄膜の、少なくとも
一方の面に誘電体薄膜が形成され、さらに前記誘電体薄
膜の外側から電圧を印加する手段が配設されていること
を特徴とする薄膜ＥＬ素子。(4) At least an alkaline earth metal or an alkaline earth metal halide and a luminescent impurity or a compound of luminescent impurities are mixed at a pressure of sulfur or a gas containing sulfur of 3×10^-^5 Torr or more. ^4 Tor
In an atmosphere of r or less, the substrate temperature is 400℃ or higher and 700℃
Below, the deposition rate is set to 5 nm/min or more and 40 nm/min.
A dielectric thin film is formed on at least one surface of a phosphor thin film formed by evaporation at n or less, and a means for applying a voltage from the outside of the dielectric thin film is further provided. Thin film EL element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1232531A JPH0395893A (en) | 1989-09-07 | 1989-09-07 | Manufacture of phosphor thin film and thin film electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1232531A JPH0395893A (en) | 1989-09-07 | 1989-09-07 | Manufacture of phosphor thin film and thin film electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0395893A true JPH0395893A (en) | 1991-04-22 |
Family
ID=16940799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1232531A Pending JPH0395893A (en) | 1989-09-07 | 1989-09-07 | Manufacture of phosphor thin film and thin film electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0395893A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270371A (en) * | 2001-03-14 | 2002-09-20 | Denso Corp | El element and display panel using it |
-
1989
- 1989-09-07 JP JP1232531A patent/JPH0395893A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270371A (en) * | 2001-03-14 | 2002-09-20 | Denso Corp | El element and display panel using it |
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