JPH039579A - Oxide superconductive pattern - Google Patents
Oxide superconductive patternInfo
- Publication number
- JPH039579A JPH039579A JP1144853A JP14485389A JPH039579A JP H039579 A JPH039579 A JP H039579A JP 1144853 A JP1144853 A JP 1144853A JP 14485389 A JP14485389 A JP 14485389A JP H039579 A JPH039579 A JP H039579A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- critical temperature
- phase
- superconducting
- temperature phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 claims abstract 3
- 239000000126 substance Substances 0.000 claims abstract 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000002887 superconductor Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910014454 Ca-Cu Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は超伝導ベーストランジスタ、超伝導電界効果型
トランジスタ等超伝導材料を用いた電子デバイスのモノ
リシック化の為のパターニングに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to patterning for monolithicization of electronic devices using superconducting materials such as superconducting base transistors and superconducting field effect transistors.
［従来の技術］
臨界温度が高く液体窒素冷却による幅広い応用が期待さ
れるＢｉ系酸化物超伝導材料を超伝導ベーストランジス
タや超伝導電界効果トランジスタ等電子デバイスに用い
るには高集積化、量産性の面からモノリシック化が必要
不可欠である。しかしモノリシック化はまだ適正手段が
選定されておらず成されていない。[Prior art] Bi-based oxide superconducting materials, which have a high critical temperature and are expected to have a wide range of applications when cooled with liquid nitrogen, require high integration and mass production in order to be used in electronic devices such as superconducting base transistors and superconducting field effect transistors. From this point of view, monolithicization is essential. However, monolithicization has not yet been achieved as appropriate means have not been selected.
［発明が解決しようとする課題］
いまだモノリシック化が図れていないのは酸化物超伝導
体は加工中に特性が変化し易いため微細パターン化した
後安定した超伝導特性を得ることが困難であるためでる
０本発明はこの困難な点を解決するものであり高集積化
が可能でｔ産性に優れた電子デバイスを容易に得んとす
るものである。[Problems to be solved by the invention] The reason why monolithicization has not yet been achieved is that the properties of oxide superconductors change easily during processing, making it difficult to obtain stable superconducting properties after fine patterning. The present invention is intended to solve this difficult point and to easily obtain an electronic device that can be highly integrated and has excellent productivity.
［課題を解決するための手段］
上記の問題を解決するため本発明の酸化物超伝導パター
ンは１）Ｂｉ系酸化物超伝導材料を用いた電子デバイス
の為のパターニングに於て予め作製した低臨界温度相ま
たは非超伝導体相の゛Ｂｉ−８ｒ−Ｃａ−Ｃｕ−０物質
上に所定のパターンでＰｂを注入し、Ｐｂ注入により得
られる高臨界温度相とその周部の低臨界温度相または非
超伝導相によりパターンを構成したこと２）Ｐｂ注入中
または注入後熱処理を行い形成すること３）Ｐｂ注入中
または注入後の熱処理を酸化窒素雰囲気中で行い形成す
ること４）Ｐｂ注入中または注入後の熱処理に於て光を
照射して形成することを特徴とする。[Means for Solving the Problems] In order to solve the above problems, the oxide superconducting pattern of the present invention is: Pb is implanted in a predetermined pattern onto the Bi-8r-Ca-Cu-0 material in the critical temperature phase or non-superconductor phase, and the high critical temperature phase obtained by Pb injection and the low critical temperature phase around it Or, the pattern is composed of a non-superconducting phase. 2) It is formed by heat treatment during or after Pb implantation. 3) It is formed by heat treatment during or after Pb implantation in a nitrogen oxide atmosphere. 4) During Pb implantation. Alternatively, it is characterized in that it is formed by irradiating light during heat treatment after implantation.
［実施例コ 以下実施例に従い本発明を説明する。[Example code] The present invention will be explained below with reference to Examples.
先ず最初に第１図に示すように単結晶ＭｇＯ基板（１０
０）１上に反応蒸着法よりＢｉ−Ｓｒ−Ｃａ−Ｃｕ−○
膜２を３８０ｎｍ形成する。First, as shown in Figure 1, a single crystal MgO substrate (10
0) Bi-Sr-Ca-Cu-○ by reactive vapor deposition method on 1
A film 2 is formed to a thickness of 380 nm.
成膜は蒸発原料にＢ ｉ −Ｐ ｂ合金、Ｓｒ、Ｃａ。For film formation, the evaporation raw materials are Bi-Pb alloy, Sr, and Ca.
Ｃｕの金属を用い、蒸発はＢｉ−Ｐｂ合金は電子ビーム
により他の金属はＫｎｕｄｓｅｎセルにより行なった。Cu metal was used, and evaporation of Bi-Pb alloy was performed by electron beam and other metals were performed by Knudsen cell.
条件は初期真空度２＊１（１’Ｔｏｒｒ、成膜中真空度
３〜９＊１０−’Ｔｏｒｒ、基板温度６００〜６８０℃
、成膜速度２０〜３５ｎｍ／ ｍ ｉ ｎであり、酸素
の供給はマイクロ波で活性化した酸素プラズマを基板部
に成膜中に照射して行う、得られたＢｉ−Ｓｒ−Ｃａ−
Ｃｕ−０膜２はＸ線回折、トンネル顕微鏡（ＳＴＭ：
ステージ温度を変えトンネル電流を調べる）、ＲＨＥＥ
Ｄ分析によると一部半導体相を含むエピタキシャル成長
した低臨界温度相（臨界温度７３Ｋ）であった。The conditions were: initial vacuum level 2*1 (1'Torr), vacuum level during film formation 3-9*10-'Torr, and substrate temperature 600-680°C.
, the film formation rate was 20 to 35 nm/min, and oxygen was supplied by irradiating the substrate with oxygen plasma activated by microwaves during film formation.
The Cu-0 film 2 was analyzed by X-ray diffraction and tunneling microscopy (STM:
(change the stage temperature and examine the tunnel current), RHEE
According to D analysis, it was an epitaxially grown low critical temperature phase (critical temperature 73K) containing a portion of a semiconductor phase.
次にＢｉ−Ｓｒ−Ｃａ−Ｃｕ−０膜２（以後低臨界温度
相とも呼ぶ）上にＲＦマグネトロンスパッタによりＭｇ
０層３を２５０ｎｍ、Ａｕ層４を抵抗加熱蒸着により１
５０ｎｍ形成する。その後フォトリソグラフィ（５はレ
ジストを示す）、ドライエツチングにより図２に示すよ
うにＭｇ０層３とＡｕ層４によりマスクを形成する。こ
こでマスクにＭｇＯだけでなくＡｕを複合させたのはイ
オン注入時に於けるパターンの安定化のためである。Next, Mg was deposited on the Bi-Sr-Ca-Cu-0 film 2 (hereinafter also referred to as low critical temperature phase) by RF magnetron sputtering.
0 layer 3 to 250 nm, Au layer 4 to 1 by resistance heating vapor deposition.
50 nm thick. Thereafter, a mask is formed using the Mg0 layer 3 and the Au layer 4 as shown in FIG. 2 by photolithography (5 indicates a resist) and dry etching. The reason why not only MgO but also Au is composited into the mask is to stabilize the pattern during ion implantation.
次にＰｂイオンをＢｉ−Ｓｒ−Ｃａ−Ｃｕ−０膜２中に
注入（矢印６は注入方向を示す）しパタニングした後、
水銀灯（特殊光源５ｔＪＶ−１１０Ｖ、ｌｌ０Ｗ）によ
り紫外線を照射しながら温度３００〜６２０℃酸化窒素
雰囲気中で１５時間熱処理を行う。ここで紫外線を照射
するのは酸素を活性化するためである。照射により熱処
理温度を低くしたり短時間にすることが可能となり作製
条件のマージンが広がりパターン精密化（Ｐｂ拡散の制
御）のための条件の適正化を行い易くしている。また雰
囲気を酸化窒素で行うのは純酸素に比べ高臨界温度相を
得易いためである。Next, after implanting Pb ions into the Bi-Sr-Ca-Cu-0 film 2 (arrow 6 indicates the direction of implantation) and patterning,
Heat treatment is performed for 15 hours at a temperature of 300 to 620° C. in a nitrogen oxide atmosphere while irradiating ultraviolet rays with a mercury lamp (special light source 5tJV-110V, 110W). The purpose of irradiating ultraviolet light here is to activate oxygen. Irradiation makes it possible to lower the heat treatment temperature or shorten the time, which widens the margin for manufacturing conditions, making it easier to optimize conditions for pattern refinement (control of Pb diffusion). The reason why the atmosphere is nitrogen oxide is that it is easier to obtain a high critical temperature phase than with pure oxygen.
次にマスクをエツチングにより除去したのちトンネル顕
微鏡とＥＰＭＡにより膜平面方向の超伝導特性とパター
ンを調べた。その結果Ｐｂを注入した部分は臨界温度１
００に以上の高臨界温度相２Ｓでその周囲は液体窒素温
度７７により低い低臨界温度相２であった。液体窒素冷
却に於ては低臨界温度相２は非超伝導相（半導体的）と
なり超伝導相と非超伝導相によりパターンが形成される
。Next, after removing the mask by etching, the superconducting properties and pattern in the plane direction of the film were investigated using a tunneling microscope and EPMA. As a result, the critical temperature of the part where Pb was injected was 1.
A high critical temperature phase 2S having a temperature of 0.00 or higher was surrounded by a low critical temperature phase 2 having a lower liquid nitrogen temperature of 77. In liquid nitrogen cooling, the low critical temperature phase 2 becomes a non-superconducting phase (semiconductor-like), and a pattern is formed by the superconducting phase and the non-superconducting phase.
本発明ではイオン注入法によりＥｉ−９ｒ−Ｃａ−Ｃｕ
−０膜中Ｐｂを注入したがマスキング後Ｐｂ蒸気中で熱
処理を行い膜中にＰｂを拡散させて注入しても効果は同
じであり何等差し支えない。In the present invention, Ei-9r-Ca-Cu is
Although Pb was injected into the -0 film, there is no problem even if Pb is diffused into the film by heat treatment in Pb vapor after masking and then injected, as the effect is the same.
［発明の効果］
以上述べたように本発明によれば容易に酸化物超伝導の
バッターを作製できるため電子デバイスのモノリシック
化が図れ高集積化、量産性の向上が可能となる。[Effects of the Invention] As described above, according to the present invention, since an oxide superconducting batter can be easily produced, electronic devices can be made monolithic, and highly integrated and mass productivity can be improved.
本発明により得られた酸化物超伝導パターンはその後電
極等を形成し超伝導トランジスタ等電子デバイスに応用
することが出来る。The oxide superconducting pattern obtained by the present invention can then be applied to electronic devices such as superconducting transistors by forming electrodes and the like.
第１図はフォトリソグラフィまでの形成膜の断面図。
第２図はマスク形成後のイオン注入を示す断面図。
・ＭｇＯ基板
・Ｂｉ−Ｓｒ−Ｃａ−Ｃｕ−０膜
（低臨界温度相）
・高臨界温度相
・ＭｇＯ層
・Ａｕ層
・レジスト
第３図は高臨界温度層と低臨界温度層の状態を示す断面
図。
１ ・
２ ・
以上FIG. 1 is a cross-sectional view of a film formed up to photolithography. FIG. 2 is a cross-sectional view showing ion implantation after mask formation.・MgO substrate ・Bi-Sr-Ca-Cu-0 film (low critical temperature phase) ・High critical temperature phase ・MgO layer ・Au layer ・Resist Figure 3 shows the states of the high critical temperature layer and the low critical temperature layer. Cross-sectional view. 1, 2, or more
Claims (1)
のパターニングに於て予め作製した低臨界温度相または
非超伝導体相のＢｉ−Ｓｒ−Ｃａ−Ｃｕ−Ｏ物質上に所
定のパターンでＰｂを注入し、Ｐｂ注入により得られる
高臨界温度相とその周部の低臨界温度相または非超伝導
相によりパターンを構成したことを特徴とする酸化物超
伝導パターン。 ２）Ｐｂ注入中または注入後熱処理を行い形成すること
を特徴とする請求項１記載の酸化物超伝導パターン。 ３）Ｐｂ注入中または注入後の熱処理を酸化窒素雰囲気
中で行い形成することを特徴とする請求項１記載の酸化
物超伝導パターン。 ４）Ｐｂ注入中または注入後の熱処理に於て光を照射し
て形成することを特徴とする請求項１記載の酸化物超伝
導パターン。[Claims] 1) Bi-Sr-Ca-Cu-O in a low critical temperature phase or non-superconductor phase prepared in advance in patterning for electronic devices using Bi-based oxide superconducting materials. An oxide superconducting pattern characterized in that Pb is implanted onto a substance in a predetermined pattern, and the pattern is composed of a high critical temperature phase obtained by Pb implantation and a low critical temperature phase or non-superconducting phase around the high critical temperature phase. . 2) The oxide superconducting pattern according to claim 1, wherein the pattern is formed by performing heat treatment during or after Pb implantation. 3) The oxide superconducting pattern according to claim 1, wherein the oxide superconducting pattern is formed by performing heat treatment during or after the Pb implantation in a nitrogen oxide atmosphere. 4) The oxide superconducting pattern according to claim 1, wherein the oxide superconducting pattern is formed by irradiating light during or during heat treatment after Pb implantation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1144853A JPH039579A (en) | 1989-06-07 | 1989-06-07 | Oxide superconductive pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1144853A JPH039579A (en) | 1989-06-07 | 1989-06-07 | Oxide superconductive pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH039579A true JPH039579A (en) | 1991-01-17 |
Family
ID=15371937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1144853A Pending JPH039579A (en) | 1989-06-07 | 1989-06-07 | Oxide superconductive pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH039579A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804835A (en) * | 1991-11-13 | 1998-09-08 | Seiko Epson Corporation | Method of operating a high temperature superconductive device comprising superconductive source, drain, and channel regions |
-
1989
- 1989-06-07 JP JP1144853A patent/JPH039579A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804835A (en) * | 1991-11-13 | 1998-09-08 | Seiko Epson Corporation | Method of operating a high temperature superconductive device comprising superconductive source, drain, and channel regions |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0325765B1 (en) | Josephson device having a josephson junction structure suitable for an oxide superconductor | |
| EP0478464B1 (en) | Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material | |
| US6188919B1 (en) | Using ion implantation to create normal layers in superconducting-normal-superconducting Josephson junctions | |
| EP0478466B1 (en) | A superconducting device and a method for manufacturing the same | |
| KR940002412B1 (en) | Supercoductive multilayer circuit and manufacturing method thereof | |
| US5219834A (en) | Process for producing a superconducting transistor | |
| JPH039579A (en) | Oxide superconductive pattern | |
| JPH04275470A (en) | Product composed of superconductor/insulator structure and manufacture of said product | |
| KR930001567B1 (en) | Structure of superconductor wiring and process for its formation | |
| JPH01132008A (en) | Superconductor and its manufacture | |
| JPH02298085A (en) | Manufacture of josephson device | |
| JP2641977B2 (en) | Superconducting element fabrication method | |
| JP2641974B2 (en) | Superconducting element and fabrication method | |
| JP2641973B2 (en) | Superconducting element and manufacturing method thereof | |
| JPH01211985A (en) | Manufacture of josephson element | |
| JPS63306677A (en) | Superconducting device and manufacture thereof | |
| JP2641971B2 (en) | Superconducting element and fabrication method | |
| JPH02197179A (en) | Josephson junction element and manufacture thereof | |
| JPH04171872A (en) | Josephson device and manufacture thereof | |
| EP0338084A1 (en) | Structure of superconductor wiring and process for its formation | |
| JPH07288346A (en) | Formation of thin film and josephson element | |
| JPH0335571A (en) | Tunnel element | |
| JPH01246373A (en) | Manufacture of thin-film superconductor | |
| JPH01199489A (en) | Manufacture of superconducting circuit | |
| JPH02114678A (en) | Superconductive element |