JPH0394065A - Method and device for producing oxide thin film - Google Patents
Method and device for producing oxide thin filmInfo
- Publication number
- JPH0394065A JPH0394065A JP23253089A JP23253089A JPH0394065A JP H0394065 A JPH0394065 A JP H0394065A JP 23253089 A JP23253089 A JP 23253089A JP 23253089 A JP23253089 A JP 23253089A JP H0394065 A JPH0394065 A JP H0394065A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- light
- substrate
- thin film
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title description 5
- 239000002994 raw material Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010936 titanium Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910003074 TiCl4 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- 101000800055 Homo sapiens Testican-1 Proteins 0.000 description 1
- 102100033390 Testican-1 Human genes 0.000 description 1
- -1 TiO and TinO6 Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- ACGUYXCXAPNIKK-UHFFFAOYSA-N hexachlorophene Chemical compound OC1=C(Cl)C=C(Cl)C(Cl)=C1CC1=C(O)C(Cl)=CC(Cl)=C1Cl ACGUYXCXAPNIKK-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000003852 thin film production method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光ＣＶＤを用いた酸化物薄膜の製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for producing an oxide thin film using photo-CVD.
従来の技術
１９８０年頃から、光化学反応を使って薄膜を堆積させ
る光Ｃ Ｖ Ｄ ４１ 膜形或プロセスの低温化の要
求と相まって研究が活発に行なわれている。BACKGROUND OF THE INVENTION Since around the 1980's, research has been actively conducted in conjunction with the demand for lower temperature processes for optical C V D 41 film formation, in which thin films are deposited using photochemical reactions.
特に 半導体分野などで各種酸化膜を低温で形或させる
必要が生じており、光ＣＶＤが注目されている。光ＣＶ
Ｄにより酸化物薄膜を製造する暇例えば有機金属と０２
といったように複数の原料ガスを使用し 酸化される側
の元素を含む原料（この例で（よ 有機金属）の吸収波
長帯と酸素元素を含む原料（この例で（よ ０２）の吸
収波長帯とがクロスオーバーする領域に波長を有する光
源を用いて各々の原料を分焦 反応させ、所望の酸化物
を堆積させる。Particularly in the semiconductor field, there is a need to form various oxide films at low temperatures, and photo-CVD is attracting attention. optical CV
For example, organic metals and 02
By using multiple raw material gases, such as the absorption wavelength band of the raw material containing the element to be oxidized (in this example, (Y02)) and the absorption wavelength band of the raw material containing the oxygen element (in this example, (Y02)). Using a light source with a wavelength in the region where the
発明が解決しようとする課題
しかし 酸素元素を含む原料を単に分解することによっ
て生或させた原子状酸素○（”Ｐ）ｉ；ｔ，酸化される
側の元素を含む原料を分解することによって生戊させた
元素との反応性に乏しく膜形戊速度が極端に遅いという
課題があった
本発明（よ 多種多様の良質な酸化物薄膜を、従来挾術
に比べより低温の条イ／１で商辿で再現性がよい製造方
法と製造装置とを提供することを目的とする。Problems to be Solved by the Invention However, atomic oxygen ○("P)i;t produced by simply decomposing a raw material containing an oxygen element; The problem with this invention was that the film formation rate was extremely slow due to poor reactivity with the elements being removed. The purpose of the present invention is to provide a manufacturing method and a manufacturing device that have good reproducibility in commercial operations.
課題を解決するための手段
本発明では前記課題を解決するために 基体表面に酸素
元素を含む原料Ａ及び酸化物を構成する元素を含む原料
Ｂを供給しつつ、前記原料Ａ及び前記原料Ｂを分解する
ために必要なエネルギを有する１種類以上の光と、 ２
９７．２〜６３６．４ｎｍ間に波長を有する光とを前記
基体表面または前記基体表面上部の前記原料Ａ， Ｂ
もしくは前記原料の分解生戒物に照射して酸化物薄膜を
製造する。Means for Solving the Problems In the present invention, in order to solve the above problems, the raw material A and the raw material B are supplied while supplying the raw material A containing the oxygen element and the raw material B containing the elements constituting the oxide to the surface of the substrate. one or more types of light having the energy necessary to decompose; and 2
Light having a wavelength between 97.2 and 636.4 nm is applied to the substrate surface or the raw materials A and B on the substrate surface.
Alternatively, an oxide thin film is produced by irradiating the decomposed raw material of the raw material.
また 本発明では前記酸化物薄膜製造方法を実現するた
めに 真空権及び少なくとも前記真空槽を排気する排気
機構を有し さらに酸素元素を含む原料Ａ及び酸化物を
構成する元素を含む原料Ｂを前記真空槽内に導入する原
料導入機楓 前記原料Ａ， Ｂを分解させるための１
種類以上の光源ａ、２９７．２〜６３６．４ｎｍ間に波
長を有する光源ｂ、前記光源ａ， ｂから発せられた
光を前記真空槽に導入する光導入機構、 膜を堆積させ
る基体の基体加熱機構を有する酸化物薄膜製造装置を提
供する。In addition, in the present invention, in order to realize the method for producing an oxide thin film, a vacuum power and an exhaust mechanism for evacuating at least the vacuum chamber are provided, and the raw material A containing an oxygen element and the raw material B containing an element constituting the oxide are Raw material introduction machine Kaede introduced into the vacuum chamber 1 for decomposing the raw materials A and B
A light source a of at least one type, a light source b having a wavelength between 297.2 and 636.4 nm, a light introduction mechanism for introducing the light emitted from the light sources a and b into the vacuum chamber, and substrate heating of a substrate on which a film is deposited. Provided is an oxide thin film manufacturing apparatus having a mechanism.
作用
酸素元素を含む原料を分解させて生或した原子状酸素に
は 基底状態０ （”Ｐ ）、基底状態より１．９６ｅ
Ｖ高いエネルギ準位の第１励起状態０（’Ｄ２）、Ｏ
（’Ｄａ）のさらに２．２２ｅＶ高い準位に２ｇ２励起
状１１ｊｆｉｏ（’Ｓｓ）が存在する。これらの原子状
酸素の他の粒子との反応速度の順位Ｃヨ○（’Ｄ２）
＞ｏ （’Ｓ＋＋） ＞ｏ （’Ｐ ）であり、Ｏ （
３Ｐ ）の反応速度を１とすると、およそＯ （’Ｄａ
）は１０６、○（’ Ｓ ＠）は１０”である。よって
、効率的に酸化物を製造するためには多量にＯ （’Ｄ
２）を生或させればよいことになる。Atomic oxygen produced by decomposing raw materials containing active oxygen elements has a ground state of 0 ("P"), and 1.96e from the ground state.
V the first excited state 0 ('D2) of the higher energy level, O
2g2 excited 11jfio ('Ss) exists at a level 2.22 eV higher than ('Da). Rank of reaction rate of these atomic oxygen with other particles Cyo○ ('D2)
>o ('S++) >o ('P ), and O (
If the reaction rate of 3P ) is 1, then approximately O ('Da
) is 106, and ○('S @) is 10". Therefore, in order to efficiently produce oxides, a large amount of O ('D
2) should be produced.
？ころ玄 一般に酸素元素を含む原料を光照射により分
解させて直接０ （’Ｄａ）を生或ずるには非常に短波
長の光源が必要で（０２の場合、 １３３〜１７５ｎｍ
）、酸化される側の元素を含む原料の吸収波長がこの波
長に一致しない等の問題が生じる場合がある。また こ
の光は明らかに空気中で吸収されるた取 光の経路を真
空にしなければならず 装置的に困難が生じる場合が多
（１以上の理由から、本発明では原料を分解するための
光■源とは別に 分解によって生戒した○（”Ｐ）を○
（’ Ｄ２）に励起するための光源を用いる。? In general, to directly produce 0 ('Da) by decomposing a raw material containing oxygen element by light irradiation, a light source with a very short wavelength is required (in the case of 02, it is 133 to 175 nm).
), problems may arise such as the absorption wavelength of the raw material containing the element to be oxidized does not match this wavelength. Also, this light is obviously absorbed in the air, so the path of the light must be created in a vacuum, which often creates difficulties in terms of equipment (for one or more reasons, in the present invention, the light path for decomposing the raw material is ■ Separately from the source, ○ (”P) that was recovered by decomposition is ○
('D2) using a light source for excitation.
第２図に示したように Ｏ （”Ｐ ）を○（’Ｄ２
）に励起するためには２９７．２〜６３６．４ｎｍの波
長を有する光を照射すればよ１，４２９７．２ｎｍ以下
の波長の光源を用いるとＯ （”Ｐ ）は０（’ Ｓ
ｓ）に励起され 逆に反応速度をか低下してしまう。こ
のように 本発明者らは２９７．２〜６３６．４ｎｍの
波長を有する光を酸素元素を含む原料を光分解により生
或させたＯ （２Ｆ ）に照射して○（’Ｄ２）を生
戒させるという２段階の方法が酸素元素を含む原料に短
波長の光を照射して直接○（’Ｄ２）を生戒させる方法
より簡単かつ効率的な方法であることを見いだした
実施例
以下に具体的実施例を示し 本発明をより詳細に説明す
る。As shown in Figure 2, O (”P ) is changed to ○('D2
) should be irradiated with light having a wavelength of 297.2 to 636.4 nm. If a light source with a wavelength of 1,4297.2 nm or less is used, O ("P ) becomes 0 (' S
s), which on the contrary slows down the reaction rate. In this way, the present inventors irradiated light with a wavelength of 297.2 to 636.4 nm to O (2F) produced by photodecomposition of a raw material containing oxygen element to produce ○('D2). The two-step method of irradiating short-wavelength light to the raw material containing oxygen element was found to be easier and more efficient than the method of directly causing ○ ('D2). The present invention will be explained in more detail by way of specific examples.
具体的実施例
第１図に本発明の酸化物薄膜製造装置の一実施例を示し
この装置を用いた本発明の酸化物薄膜製造方法の一実
施例を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of the oxide thin film production apparatus of the present invention, and an embodiment of the oxide thin film production method of the present invention using this apparatus will be described.
第１図において、 １０は真空４ｔ １１は真空ポンプ
、 １２は基坂 １３は基板ホルダ、 ｌ４はヒー久
ｌ５は光導入ｉｔ６ａ，ｂは原料導入口１７はＡｒＦエ
キシマレーザ、 １８はＡｒレーザ、１９は０２、２０
はＴｉＣｌ４である。真空槽ｌＯを真空ボンプ１１によ
り１０−’Ｔｏｒｒ程度に排気し 基板ホルダｌ３上に
設置した基板（ＭｇＯ（１００））１２をヒータｌ４に
より３５０ｔに加熱し１， その後、反応槽ｌＯ内に
ガス導入口１６ａよりＴｉＣＩａ ２０をガス導入口
１６ｂより０２ １９を導入し 反応槽ｌ内のガス圧を
６×１０−’Ｔｏｒｒにした（真空槽１０内の分圧比は
ＴｉＣｌ４：０２＝１：２）。真空槽１０内のＴＩＣ１
４分子と０２分子は基板１２表面上への吸着、脱離を繰
り返す。次いで、光導入窓ｌ５からＡｒＦエキシマレー
ザ１７光及びＡｒレーザ１８光を真空槽１０内に導入し
基板１２表面に照射した（Ａ ｒ Ｆエキシマレーザ
１７先の繰り返し周波数６ ０ Ｈ ｚ， 強度４０
Ｗ／ｃｍ２ Ａｒレーザ１８光（連続光）の強度８０Ｗ
／ｃｍ２、照射時間ともにｌｈｏｕｒ）。ＴｉＣＩｎの
吸収波長帯は４００ｎｍ以下であるたぬ 基板１２表面
に吸着したＴｉＣ１４分子へのＡｒＦエキシマレーザｌ
７光（波長１９３ｎｍ）の照射により以下に示すように
分解されて、金属Ｔ１が生或される。In Fig. 1, 10 is a vacuum 4t, 11 is a vacuum pump, 12 is a base, 13 is a substrate holder, and l4 is a heater.
15 is a light introduction port 6a, b is a raw material inlet 17 is an ArF excimer laser, 18 is an Ar laser, 19 is 02, 20
is TiCl4. The vacuum chamber IO is evacuated to about 10-' Torr with a vacuum pump 11, and the substrate (MgO (100)) 12 placed on the substrate holder 13 is heated to 350 t with a heater 14. After that, gas is introduced into the reaction chamber IO. TiCIa 20 was introduced through the port 16a, and 0219 was introduced through the gas inlet 16b, and the gas pressure in the reaction tank 1 was set to 6×10 Torr (the partial pressure ratio in the vacuum tank 10 was TiCl4:02=1:2). TIC1 in vacuum chamber 10
The 4 molecules and the 02 molecules repeat adsorption and desorption onto the surface of the substrate 12. Next, ArF excimer laser 17 light and Ar laser 18 light were introduced into the vacuum chamber 10 through the light introduction window 15 and irradiated onto the surface of the substrate 12 (the repetition frequency of the ArF excimer laser 17 was 60 Hz, the intensity was 40
W/cm2 Ar laser 18 light (continuous light) intensity 80W
/cm2, irradiation time is lhour). The absorption wavelength band of TiCIn is 400 nm or less.
By irradiation with light (wavelength: 193 nm), the metal T1 is decomposed as shown below, and metal T1 is produced.
ｈ ν１＠３ｎｌ１
↓
Ｔ’ ｉ Ｃ Ｉ ａ →Ｔ ｉ＋２ｃ
Ｉａまた ０２の吸収波長帯は２ ４ ０ ｎｍ以下で
あるために ０２もＡｒＦエキシマレーザｌ７光により
以下に示すように分解されて原子状酸素○（”Ｐ）を生
戊される。h ν1@3nl1 ↓ T' i C I a →T i+2c
Since the absorption wavelength band of Ia and 02 is 240 nm or less, 02 is also decomposed by the ArF excimer laser 17 light as shown below to generate atomic oxygen ○ ("P).
ｈ νｌＱ３ｎｍ
↓
○２→２０ （３Ｐ ）
この○（３Ｐ）はＡｒレーザｌ８光（波長５１４ｎｍ）
により以下に示すように○（’Ｄ２）に励起される。h νlQ3nm ↓ ○2→20 (3P) This ○(3P) is Ar laser l8 light (wavelength 514nm)
is excited to ○('D2) as shown below.
ｈ ν６１４ｎｓ
↓
○ （３Ｐ ）→○ （’Ｄ２）
この○（’Ｄ２）は金属Ｔｉと容易に反応して以下に示
ずようにＴｉＯ２生或される。h ν614ns ↓ ○ (3P)→○ ('D2) This ○ ('D2) easily reacts with metal Ti to generate TiO2 as shown below.
Ｔｉ＋２０ （’Ｄ２） →Ｔ１ ０２このように
して、膜形戊時間１ｈｏｕｒで膜厚２．５μｍのＴｉ○
２薄膜が基板１２表面上のレーザ１７、 １８光が照射
された部分に形或できた この膜の結晶構造をＸ線回折
により調べたところ、第３図に示すごとく基板方位に強
く配向したアナターゼ型のＴｉ○２であった 基板温度
を５５０℃とし 他の条件は同一で膜形或を行なったと
こ水 ルチル型のＴｉＯ２も形戒できｔラな耘 ここで
は越板としてＭｇ○（１ ０ ０）を用いた力＜ Ｓ
ｉ、サファイヤ、ガラス等他の基板を用いても結晶性の
良好なＴ１０２薄膜が形或でき１， また 基板温度
は２００℃以上で結晶性の良好なＴｉ○２薄膜が形或で
き氾
また ここでは光源としてＡｒＦエキシマレーザとＡｒ
レーザを用いた力文 前者は低圧水銀ランブ（波長１８
５ｎｍ）等の光源を用いてもよく、後者ｉ：ＬＨｅ−Ｎ
ｅレーザ（６３３ｎｍ）等の光源をを用いてもよ鶏
また ここではＴｉ○２薄膜形戒用の原料としてＴ ｉ
Ｃ ｌ ４と０２を用いた力交 前者はＴｉ元素を含
む有機金属等他の原料を用いてもよく、後者はＮ２０
やＣ○２等を用いてもよ賎 その場合、用いた原料の吸
収波長に応じた光源を用いればよく、前者の吸収波長と
後者のそれが異なる場合には各々別々の光源を用いれば
よＬ〜
また ここでは酸化物薄膜の一例としてＴｉ○２の形或
に次いて述べた力＜ ＴｉＯやＴｉｎＯ６等他のチタ
ン酸化物やＰｂ○、ＺｎＯ等の酸化糎ＰｂＴｉＯｓや酸
化物超電導等の複合酸６化物も形戒でいることを確認し
ｔも 複合酸化物の場合３種類以上の原料を用いたた
吹 光源も各々の原料の吸収波長に応じた２種類以上の
光源とＯ （’Ｄａ）生或用の光源との併せて３種類以
上の光源を用いた
−９−
−１０−
発明の効果
以」二のように 原料分解用の光源とは別に原子状酸素
励起用の光源を追加した本発明の酸化物薄膜の製造方法
及び製造装置によって、多種多様の良質な酸化物薄膜が
従来の方法に比べてより低温下の条件において高速かつ
再現性よく製造でき、本発明の工業的価値は極めて高（
１Ti+20 ('D2) →T1 02 In this way, Ti○ with a film thickness of 2.5 μm is formed in a film forming time of 1 hour.
2 thin film was formed on the surface of the substrate 12 where the laser beams 17 and 18 were irradiated. The crystal structure of this film was examined by X-ray diffraction, and as shown in Figure 3, anatase was strongly oriented in the direction of the substrate. The substrate temperature was 550℃, and other conditions were the same. 0) using force < S
A T102 thin film with good crystallinity can be formed even if other substrates such as i, sapphire, or glass are used1, and a Ti2 thin film with good crystallinity can be formed at a substrate temperature of 200°C or higher. Now, we use ArF excimer laser and Ar as light sources.
The former uses a low-pressure mercury lamp (wavelength 18
5 nm) may be used, the latter i: LHe-N
A light source such as an e-laser (633 nm) can also be used. Here, Ti is used as a raw material for Ti○2 thin film.
Force exchange using C l 4 and 02 The former may use other raw materials such as organometallic containing Ti element, and the latter may use N20
In that case, it is sufficient to use a light source according to the absorption wavelength of the raw materials used. If the absorption wavelength of the former and the latter are different, separate light sources may be used for each. L ~ In addition, as an example of an oxide thin film, we will use the form of Ti○2 or the following force < other titanium oxides such as TiO and TinO6, oxides such as Pb○ and ZnO, composites such as PbTiOs and oxide superconductors. It was confirmed that the acid hexide also has the same shape.In the case of composite oxides, three or more types of raw materials are used.The light source is also O ('Da )Using three or more types of light sources in addition to the light source for raw material -9- -10- Effects of the invention As shown in 2. In addition to the light source for raw material decomposition, a light source for excitation of atomic oxygen is added. By means of the method and apparatus for producing oxide thin films of the present invention, a wide variety of high-quality oxide thin films can be produced at higher speed and with better reproducibility at lower temperatures than with conventional methods, and the industrial value of the present invention is is extremely high (
1
第１図は本発明の酸化物薄膜製造装置の一実施例を説明
する概念ブロック阻 第２図は原子状酸素のエネルギ準
位を表した阻 第３図は本発明の一実施例として製造し
たＴｉ○２薄膜のＸ線回折強度図である。
１０・・・真空Ｆｉ．１１・・・真空ポンプ、 ｌ２・
・・基楓 １３・・・基板ホルダ、 ｌ４・・・ヒー久
１５・・・光導入？ｉ３− １ ６ ａ− ｂ・
・・原料導入ｎ １７・・・ＡｒＦエキシマレーザ光
１８・・・Ａｒレーザ光 １９・・・０２、２０・・
・ＴｉＣｌａFig. 1 shows a conceptual block diagram for explaining one embodiment of the oxide thin film manufacturing apparatus of the present invention. Fig. 2 shows a conceptual block diagram showing the energy level of atomic oxygen. It is an X-ray diffraction intensity diagram of a Ti○2 thin film. 10...Vacuum Fi. 11...Vacuum pump, l2.
...Moto Kaede 13...Substrate holder, l4...Hikyu 15...Light introduction? i3- 1 6 a- b・
...Raw material introduction n 17...ArF excimer laser light 18...Ar laser light 19...02, 20...
・TiCla
Claims (2)
構成する元素を含む原料Ｂを供給しつつ、前記原料Ａ及
び前記原料Ｂを分解するために必要なエネルギを有する
１種類以上の光と、２９７．２〜６３６．４ｎｍ間に波
長を有する光とを前記基体表面または前記基体表面上部
の前記原料Ａ、Ｂもしくは前記原料Ａ、Ｂの分解生成物
に照射することを特徴とする酸化物薄膜製造方法。(1) One or more types of light having the energy necessary to decompose the raw material A and the raw material B while supplying the raw material A containing an oxygen element and the raw material B containing an element constituting an oxide to the surface of the substrate. and irradiating the substrate surface or the raw materials A, B or the decomposition products of the raw materials A, B on the substrate surface with light having a wavelength between 297.2 and 636.4 nm. Thin film manufacturing method.
気機構を有し、さらに酸素元素を含む原料Ａ及び酸化物
を構成する元素を含む原料Ｂを前記真空槽内に導入する
原料導入機構、前記原料Ａ、Ｂを分解させるための１種
類以上の光源ａ、２９７．２〜６３６．４ｎｍ間に波長
を有する光源ｂ、前記光源ａ、ｂから発せられた光を前
記真空槽に導入する光導入機構、膜を堆積させる基体の
基体加熱機構を有することを特徴とする酸化物薄膜製造
装置。(2) A raw material introduction mechanism having a vacuum chamber and at least an exhaust mechanism for evacuating the vacuum chamber, and further introducing raw material A containing an oxygen element and raw material B containing an element constituting an oxide into the vacuum chamber; one or more types of light sources a for decomposing raw materials A and B; a light source b having a wavelength between 297.2 and 636.4 nm; light introduction for introducing light emitted from the light sources a and b into the vacuum chamber; 1. An oxide thin film manufacturing apparatus characterized by having a substrate heating mechanism for a substrate on which a film is deposited.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23253089A JPH0394065A (en) | 1989-09-07 | 1989-09-07 | Method and device for producing oxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23253089A JPH0394065A (en) | 1989-09-07 | 1989-09-07 | Method and device for producing oxide thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0394065A true JPH0394065A (en) | 1991-04-18 |
Family
ID=16940783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23253089A Pending JPH0394065A (en) | 1989-09-07 | 1989-09-07 | Method and device for producing oxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0394065A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011044577A (en) * | 2009-08-21 | 2011-03-03 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device |
-
1989
- 1989-09-07 JP JP23253089A patent/JPH0394065A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011044577A (en) * | 2009-08-21 | 2011-03-03 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device |
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