JPH0393686A - Metallizing of ceramics - Google Patents
Metallizing of ceramicsInfo
- Publication number
- JPH0393686A JPH0393686A JP23198189A JP23198189A JPH0393686A JP H0393686 A JPH0393686 A JP H0393686A JP 23198189 A JP23198189 A JP 23198189A JP 23198189 A JP23198189 A JP 23198189A JP H0393686 A JPH0393686 A JP H0393686A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal layer
- metal
- metallic layer
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- 150000002500 ions Chemical class 0.000 claims abstract description 38
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 239000000470 constituent Substances 0.000 claims abstract description 9
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract description 21
- 238000000151 deposition Methods 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Ceramic Products (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、たとえばＩＣパッケージやプリント基板な
どの製造において、たとえば窒化アル逅ニウム（Ａ ｊ
！ Ｎ）セラミックスやアルミナ（Ａｊ！ｇｏｓ）セラ
ミックスなどの基板表面に電極を形或する場合などに好
適に実施されるセラミックスのメタライズ方法に関する
ものである．
〔従来の技術〕
Ａｊ！Ｎセラミックスは、金属材料との熱膨張率の差が
大きく、したがって高温でのメタライズを行うとその冷
却時に歪みが生じるとともに、大多数の金属に対して濡
れ性が悪いため、表面のメタライズは一般に困難である
．本件発明者らは先に、室温処理で強固な密着強度を有
するメタライズ層を／ＩＮセラ竃ツクス表面に形戒させ
るために、いわゆるイオン４キシング法を用いたメタラ
イズ方法を提案している（たとえば特願平１ −７１７
６号）すなわち、たとえばＴｉ金属の蒸着を行うととも
に、不活性ガスイオンを照射して、界面にＴｉ金属，不
活性ガスおよびＡｌＮセラミックスが混合された混合層
を有するＴｉ金属層をＡＩＮセラξックス表面に形成し
、このＴｉ金属層上にＮｉ金属層などを蒸着法などで形
成して厚膜化したメタライズ層を形成する．このメタラ
イズ層では、上記混合層の働きによりＴｉ金属層はＡｊ
！Ｎセラミックス表面に強固に密着することとなる．〔
発明が解決しようとする課題〕
上述のようなメタライズ方法では、第１層目の金属層で
あるＴｉ金属層とＡｌＮセラミックス表面との間は上記
混合層の働きにより強固に密着するが、ＴＩ金属層と第
２層目の金属層であるＮｉ金属層との間には両者の混合
層などは存在せず、Ｎｉの蒸着などによる密着強度を有
しているに過ぎない．このため、Ｔｉ金属層とＮｉ金属
層との界面での剥離が生じやすく、メタライズ層の信頼
性が悪いという問題があった．同様の問題は、第２層目
の金属層にさらに第３，第４．・・・・の金属層を蒸着
により積層させる場合にも生じる．この発明の目的は、
上述の技術的課題を解決し、セラ果ツクス表面に信頼性
の高いメタライズ層を強固に密着させることができるセ
ラミックスのメタライズ方法を提供することである．
〔！ＩＩＩＩ！Ｉを解決するための手段〕この発明のセ
ラミックスのメタライズ方法は、セラ逅ツクス表面に形
成した第１の金属層上に第２の金属層を形成するに当た
り、前記第２の金属層の構成金属の蒸着と、不活性ガス
イオンの照射とを併用することを特徴とする．
（作用）
この発明の構成によれば、第１の金属層上に形成される
第２の金属層は、その構成金属の蒸着と不活性ガスイオ
ンの照射とを併用したいわゆるイオンξキシング法によ
り行われる．この結果、第１，第２の金属層相互間の界
面近傍には、第１の金属層の構成金属，第２の金属層の
構成金属．および不活性ガスが混合された混合層が形成
され、この混合層の働きにより、第２の金属層は第１の
金属層に強固に密着することとなる．この結果、メタラ
イズ層は全体としてセラ逅ツクス基板に強固に密着する
こととなり、またその信頼性も良好なものとなる．
〔実施例〕
第２図はこの発明の一実施例に従う薄膜形成装置の基本
的な構成を示す概念図である．メタライズすべきＡｌＮ
セラミックス基板１は真空チャンバ２内で軸線ｆｆｉｌ
まわりに回転駆動される試料ホルダ３の表面に固定され
る．この試料ホルダ３に対向してパケット型イオン源４
が設けられており、中間には電子ビーム加熱式蒸発源５
が設けられている．
イオン源４は不活性ガスであるＡｒガスがガス導入口６
から導入されるアークチャンバ９を備え、このアークチ
ャンバ９内でフィラメント７とプラズマ電極８とでアー
ク放電を起こさせることによりＡｒプラズマを生威させ
、このＡｒプラズマからＡｒイオンを抑制電極ｌＯおよ
び引出電極１ｌによって前記試料ホルダ３に向けて加速
して取り出すようにしたものである．
ｌ２は基板１表面に堆積したメタライズ層の膜厚を測定
するための膜厚モニタであり、１３はイオン源４からの
イオンビームのビーム電流を検出するイオン電流モニタ
である．
このような薄膜形成装置によって、第１図に簡略化して
示す手順によりメタライズ層２０が形成される．すなわ
ち、先ず第ｌ図（１）に示すように基板ｌに向けて蒸発
源５からＴｉ金属を蒸発させ、これと同時または交互に
イオン源４からのＡｒイオンを照射する．このとき真空
チャンバ２内の真空度はＩ Ｘ １ ０−’〜Ｉ Ｘ
１ ０−’Ｔｏｒｒとされ、Ａｒガスのガス圧はＩ Ｘ
ｌ Ｏ−’〜ｌ Ｘ １ ０−’Ｔｏｒｒとされる．
そしてＡ『イオンの加速エネルギーは１０ｅ Ｖ〜５
０ ｋｅＶとされ、その照射量はＩＸＩＯ１７個／ｃｍ
”程度とされる．このような条件のもとての薄膜形成処
理により、基板１表面には第１図（２）に示すように第
１の金属層であるＴｉ金属層２ｌが形成される．このＴ
ｉ金属層２ｌと基＃Ｈ．ｌとの界面近傍にはＴｉ金属，
Ａｒ，およびＡｎ！Ｎセラミックス基板材料が混合さ
れた混合層（第ｌ図では図示が省略されている．）が形
成される．このＴｉ金属層２ｌの形成の後には、蒸発源
５からはＮｉ金属の蒸発が行われ、これと同時または交
互にイオン源４からのＡｒイオンの照射が行われる（第
１図（２）参照．）．これにより、第１図（３）に示す
ようにＴｉ金属層２１上に第２の金属層であるＮｉ金属
層２２が積層される，Ａｒイオンが照射されることによ
り、Ｔｉ金属層２ｌとＮｉ金属層２２との界面近傍には
、Ｔｉ，Ｎｉ，およびＡｒが混合された混合層（第１図
では図示が省略されている．）が形成される．
第３図は上記Ｔｉ金属層２ｌが形成される様子を簡略化
して示す説明図である．図中ａは，ＩＮセラミックス基
板ｌ．．ｂは前述の混合層、ＣはＡｒイオンとＴｉ金属
とが混合した蒸着層である．なお、ｄはＡｒイオン、ｅ
はＴｉ蒸発物である．任意の速度で蒸発したＴｉ蒸発物
ｅは、１０ｅＶ〜５０ｋｅＶで加速されたＡｒイオンｄ
と基板１表面で混合される．このときＴｉ原子は前記加
速されたＡｒイオンｄによってスパッタされもしくは基
板ｌの内部に押し込まれる．このようにして上述の混合
層ｂが形成される．この混合層ｂは基板１に対して強固
に密着し、また蒸着層Ｃは混合層ｂに対して強固に密着
する．このようにして、混合層ｂの働きにより、Ｔｉ金
属層２１が基板ｌ表面に強固に密着する．
Ｔｉ金属層２ｌ上へのＮｉ金属層２２の形成もまた同様
に行われ、両者の界面近傍に形成されるＴｉ，Ｎｉ，お
よびＡｒが混合された混合層の働きにより、Ｎｉ金属層
２２はＴｉ金属層２１に強固に密着することとなる．
基板ｌに対するＴｉまたはＮｉ金属の蒸着と、Ａｒイオ
ンの照射とは、同時に行われてもよく、また交互に行わ
れてもよい．すなわち、ＴｉまたはＮｉ金属の蒸着とＡ
ｒイオンの照射とを併用することにより、上述のような
混合層を各界面に形成させて、基ＦＬｌとＴｉ金属層２
ｌとの間．およびＴ１金属層２１とＮｉ金属層２２との
間の各密着強度を向上することができる．
このようにして、基板１，Ｔｉ金属層２１，およびＮｉ
金属層２２は各界面で高い密着強度を有することができ
るので、Ｔｉ金属層２ｌおよびＮ１金属層２２を含むメ
タライズ層２０は全体として基板１に強固に密着し、し
かも第２層目の金属層であるＮｉ金属層の剥離が生じる
こともないので良好な信頼性を有することができる。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to the manufacture of IC packages, printed circuit boards, etc., for example, using aluminum nitride (A j
! N) This relates to a method of metallizing ceramics, which is preferably carried out when forming electrodes on the surface of a substrate such as ceramics or alumina (Aj!gos) ceramics. [Conventional technology] Aj! N-ceramics has a large difference in coefficient of thermal expansion from metal materials, so if metallized at high temperatures, distortion will occur when it is cooled, and it has poor wettability with most metals, so surface metallization is generally difficult. Have difficulty. The inventors of the present invention have previously proposed a metallization method using the so-called ion 4-xing method in order to form a metallized layer that has strong adhesion strength when treated at room temperature on the surface of /IN ceramics (for example, Patent application No. 1-717
No. 6) That is, for example, by vapor-depositing Ti metal and irradiating inert gas ions, a Ti metal layer having a mixed layer of Ti metal, inert gas, and AlN ceramics at the interface is formed into AIN ceramics. A thick metallized layer is formed by forming a Ni metal layer or the like on the Ti metal layer by vapor deposition or the like. In this metallized layer, the Ti metal layer has Aj
! This results in strong adhesion to the N ceramic surface. [
[Problems to be Solved by the Invention] In the metallization method as described above, the Ti metal layer, which is the first metal layer, and the AlN ceramic surface are firmly adhered to each other due to the function of the mixed layer. There is no mixed layer between the layer and the Ni metal layer, which is the second metal layer, and the adhesion strength is simply due to the vapor deposition of Ni. For this reason, there was a problem in that peeling easily occurred at the interface between the Ti metal layer and the Ni metal layer, resulting in poor reliability of the metallized layer. A similar problem occurs in the second metal layer as well as in the third, fourth, and so on. This also occurs when metal layers of ... are laminated by vapor deposition. The purpose of this invention is to
The object of the present invention is to provide a method for metallizing ceramics that solves the above-mentioned technical problems and allows a highly reliable metallized layer to firmly adhere to the surface of ceramics. [! III! Means for Solving Problem I] In the ceramic metallization method of the present invention, when forming a second metal layer on the first metal layer formed on the surface of the ceramic, the constituent metal of the second metal layer is It is characterized by the combined use of vapor deposition and irradiation with inert gas ions. (Function) According to the configuration of the present invention, the second metal layer formed on the first metal layer is formed by the so-called ion xing method, which combines vapor deposition of the constituent metal and irradiation with inert gas ions. It will be done. As a result, near the interface between the first and second metal layers, the constituent metal of the first metal layer and the constituent metal of the second metal layer. A mixed layer is formed in which the metal and inert gases are mixed, and the function of this mixed layer causes the second metal layer to firmly adhere to the first metal layer. As a result, the metallized layer as a whole firmly adheres to the ceramic substrate, and its reliability is also improved. [Embodiment] FIG. 2 is a conceptual diagram showing the basic configuration of a thin film forming apparatus according to an embodiment of the present invention. AlN to be metalized
The ceramic substrate 1 has an axis ffil in the vacuum chamber 2.
It is fixed to the surface of the sample holder 3, which is rotated around the periphery. A packet type ion source 4 is located opposite this sample holder 3.
is provided, and an electron beam heated evaporation source 5 is provided in the middle.
is provided. The ion source 4 has Ar gas, which is an inert gas, at the gas inlet 6.
The filament 7 and the plasma electrode 8 cause an arc discharge in the arc chamber 9 to generate Ar plasma, and the Ar ions are removed from the Ar plasma by the suppression electrode lO and the extraction electrode. The sample is accelerated toward the sample holder 3 and taken out by the electrode 1l. 12 is a film thickness monitor for measuring the thickness of the metallized layer deposited on the surface of the substrate 1, and 13 is an ion current monitor for detecting the beam current of the ion beam from the ion source 4. Using such a thin film forming apparatus, the metallized layer 20 is formed according to the procedure shown in simplified form in FIG. That is, as shown in FIG. 1(1), Ti metal is first evaporated from the evaporation source 5 toward the substrate 1, and at the same time or alternately, Ar ions from the ion source 4 are irradiated. At this time, the degree of vacuum in the vacuum chamber 2 is IX10-'~IX
1 0-'Torr, and the gas pressure of Ar gas is I
l O-'~l X 1 0-'Torr.
And A: The acceleration energy of ions is 10eV ~ 5
0 keV, and the irradiation amount is 17 IXIO/cm
By the thin film forming process under these conditions, a Ti metal layer 2l, which is the first metal layer, is formed on the surface of the substrate 1 as shown in FIG. 1 (2). ．This T
i metal layer 2l and base #H. Ti metal near the interface with l,
Ar, and An! A mixed layer (not shown in FIG. 1) in which N ceramic substrate materials are mixed is formed. After the formation of the Ti metal layer 2l, Ni metal is evaporated from the evaporation source 5, and Ar ions are irradiated from the ion source 4 simultaneously or alternately (see FIG. 1 (2)). ). As a result, the Ni metal layer 22, which is the second metal layer, is stacked on the Ti metal layer 21 as shown in FIG. 1(3). A mixed layer (not shown in FIG. 1) in which Ti, Ni, and Ar are mixed is formed near the interface with the metal layer 22. FIG. 3 is a simplified explanatory diagram showing how the Ti metal layer 2l is formed. In the figure, a indicates the IN ceramics substrate l. ．． b is the above-mentioned mixed layer, and C is a vapor deposited layer in which Ar ions and Ti metal are mixed. Note that d is Ar ion, e
is Ti evaporated product. Ti evaporated material e evaporated at an arbitrary rate is evaporated by Ar ion d accelerated at 10 eV to 50 keV.
are mixed on the surface of substrate 1. At this time, the Ti atoms are sputtered or pushed into the substrate l by the accelerated Ar ions d. In this way, the above-mentioned mixed layer b is formed. This mixed layer b firmly adheres to the substrate 1, and the vapor deposited layer C firmly adheres to the mixed layer b. In this way, the Ti metal layer 21 firmly adheres to the surface of the substrate l due to the action of the mixed layer b. Formation of the Ni metal layer 22 on the Ti metal layer 2l is also performed in the same manner, and due to the action of the mixed layer of Ti, Ni, and Ar formed near the interface between the two, the Ni metal layer 22 is formed of Ti. This results in strong adhesion to the metal layer 21. The deposition of Ti or Ni metal on the substrate l and the irradiation of Ar ions may be performed simultaneously or alternately. That is, the deposition of Ti or Ni metal and the
By using r ion irradiation together, a mixed layer as described above is formed at each interface, and the base FLl and the Ti metal layer 2
Between l. Also, the adhesion strength between the T1 metal layer 21 and the Ni metal layer 22 can be improved. In this way, the substrate 1, the Ti metal layer 21, and the Ni
Since the metal layer 22 can have high adhesion strength at each interface, the metallized layer 20 including the Ti metal layer 2l and the N1 metal layer 22 as a whole firmly adheres to the substrate 1, and moreover, the second metal layer Since the Ni metal layer does not peel off, good reliability can be achieved.
本件発明者らは、上述のようにしてＡｌＮセラミックス
基板ｌ表面にいわゆるイオンごキシング法によりＴｉ金
属層２ｌおよびＮｉ金属層２２を形成して作威した試料
と、Ｔｉ金属層のみをイオンξキシング法で形成してＮ
ｉ金属層は蒸着法で（すなわちＡｒイオンの照射を併用
しないで）形成した比較用試料とを作威して、各メタラ
イズ層層の密着強度の測定を行っている，Ａｒイオンの
加速エネルギーは２５ｋａｌｌとし、イオン電流はｌＯ
ｍＡとした．密着強度の測定は、試料のメタライズ層表
面にエポキシ系接着剤を用いてアル亀ニウム製の棒状体
を接着して、引張試験により行った．第４図は試験結果
を示す図であり、この実施例に従って作威した試料のメ
タライズ層の密着強度のＡｒイオンの照射量（個／ｃｍ
”）に対する依存性がシンボル“口”によって示されて
いる．また上記比較用試料に関する同様な測定結果はシ
ンボル“０″によって示されている．なお、第４図中、
記号“↑”は密着強度の測定の際に、上記接着剤が破断
したことを示しており、したがってメタライズ層の密着
強度が測定値よりも大きいことを示している，Ａｒイオ
ンの照射量が０（個／ｃ１）である場合の密着強度は、
ＡｌＮセラミックス基板表面にＴＩ金属およびＮｉ金属
を蒸着法により順に積層した場合の密着強度を示す．
シンボル“０″で示された上記比較用試料の測定結果に
おいて、第４図において参照符合ｌ１〜ｌ３で示す測定
点での上記引張試験では、Ｔｉ金属層とＮｉ金属層との
界面での剥離が生じたが、この実施例に従って作製した
試料では、基板−Ｔｉ金属層，Ｔｌ金属層一Ｎｉ金属層
のいずれの界面でも剥離が生じず、メタライズ層は高い
密着強度（ ６ ｋｇ／一ｍ”以上）で基板に密着し、
かつメタライズ層は良好な信頼性を有することが確認さ
れた．上述の実施例では、第１，第２の金属層としてそ
れぞれＴｉ金属層、Ｎｉ金属層を適用した例について説
明したが、上記第１，第２の金属層には他の種類の金属
層が用いられてもよい．また上述の実施例では、Ｔｉ金
属層とＮ１金属層との２層の金属層によってメタライズ
層が構成される場合を例にとったが、３層以上の金属層
により構成されるメタライズ層を形成する場合にもこの
発明は容易に応用することができ、第３，第４，・・・
・の金属層の形成時に、各構成金属の蒸着と不活性ガス
イオンの照射とを併用するようにすればよい．この場合
に隣接する金属層間の界面近傍には混合層が形成されて
、隣接する金属層相互間の密着が強固なものとなる．
さらにまた、上述の実施例では不活性ガスイオンとして
Ａｒイオンを例にとったが、Ａ『イオン以外の他の不活
性ガスイオン（Ｈｅ，Ｎｅ，Ｋｒ，Ｘｅ，Ｎｔの各ガス
イオン）が用いられてもよい．また、セラミックスとし
ては、Ａｎ！．Ｎセラミックスの他にアルミナ（Ａｊ！
ｔＯｓ），炭化珪素．窒化珪素などの他のセラミックス
が用いられてもよい。The inventors of the present invention have prepared a sample in which a Ti metal layer 2l and a Ni metal layer 22 are formed on the surface of an AlN ceramic substrate l by the so-called ion-kissing method as described above, and a sample in which only the Ti metal layer is ion-kissed. Formed by law
The adhesion strength of each metallized layer was measured using a comparison sample formed by the metal layer by vapor deposition (that is, without Ar ion irradiation).The acceleration energy of Ar ions is 25 kall, and the ion current is lO
It was set as mA. Adhesion strength was measured by adhering an alkene rod to the surface of the metallized layer of the sample using an epoxy adhesive and performing a tensile test. FIG. 4 is a diagram showing the test results, and shows the adhesion strength of the metallized layer of the sample prepared according to this example in terms of Ar ion irradiation amount (number/cm).
”) is shown by the symbol “mouth”. Similar measurement results for the comparative sample mentioned above are shown by the symbol “0”.
The symbol "↑" indicates that the adhesive was broken during the measurement of adhesion strength, and therefore indicates that the adhesion strength of the metallized layer is greater than the measured value.The irradiation amount of Ar ions is 0. The adhesion strength when (number/c1) is,
This figure shows the adhesion strength when TI metal and Ni metal are sequentially laminated on the surface of an AlN ceramic substrate by vapor deposition. In the measurement results of the comparative sample indicated by the symbol "0", the tensile test at the measurement points indicated by reference symbols 11 to 13 in FIG. However, in the sample prepared according to this example, no peeling occurred at either the substrate-Ti metal layer or Tl metal layer-Ni metal layer interface, and the metallized layer had a high adhesion strength (6 kg/1 m"). (above) to ensure close contact with the board.
It was also confirmed that the metallized layer has good reliability. In the above embodiment, an example was explained in which a Ti metal layer and a Ni metal layer were applied as the first and second metal layers, respectively. However, other types of metal layers may be used as the first and second metal layers. May be used. Furthermore, in the above embodiment, the metallized layer is composed of two metal layers, the Ti metal layer and the N1 metal layer, but the metallized layer is formed of three or more metal layers. This invention can be easily applied to cases where the third, fourth,...
・When forming the metal layer, vapor deposition of each component metal and irradiation with inert gas ions may be used together. In this case, a mixed layer is formed near the interface between adjacent metal layers, and the adhesion between adjacent metal layers becomes strong. Furthermore, in the above embodiment, Ar ions were used as inert gas ions, but other inert gas ions (He, Ne, Kr, Xe, and Nt gas ions) other than A' ions were used. It is okay to be given. In addition, as for ceramics, An! ．． In addition to N ceramics, alumina (Aj!
tOs), silicon carbide. Other ceramics such as silicon nitride may also be used.
以上のようにこの発明のセラ逅ツクスのメタライズ方法
によれば、第１，第２の金属層相互間の界面近傍には、
第１の金属層の構成金属，第２の金属層の構成金属．お
よび不活性ガスが混合された混合層が形成され、この混
合層の働きにより、第２の金属層は第１の金属層に強固
に密着することとなる．この結果、メタライズ層は全体
としてセラミックス基板に強固に密着することとなり、
またその信頼性も良好なものとなる．As described above, according to the method of metallizing ceramics of the present invention, near the interface between the first and second metal layers,
Constituent metal of the first metal layer, constituent metal of the second metal layer. A mixed layer is formed in which the metal and inert gases are mixed, and the function of this mixed layer causes the second metal layer to firmly adhere to the first metal layer. As a result, the metallized layer as a whole firmly adheres to the ceramic substrate,
Moreover, its reliability is also good.
第１図はこの発明の一実施例のセラミックスのメタライ
ズ方法の手順を簡略化して示す断面図、第２図は上記方
法の実施のための薄膜形成装置の基本的な構成を示す概
念図、第３図は／ＩＮセラミックス基板の表面近傍の様
子を簡略化して示す説明図、第４図はメタライズ層の密
着強度の測定結果を示す図である．
１・・・ＡＩＮセラ果ツクス基板、４・・・イオン源、
５・・・蒸発源、２０・・・メタライズ層、２１・・・
Ｔｉ金属層（第１の金属層）、２２・・・Ｎｉ金属層（
第２の金属層）
第
１
図
（１）
（２）
（３）
第
３
図
第
２
図FIG. 1 is a cross-sectional view showing a simplified procedure of a ceramic metallization method according to an embodiment of the present invention, FIG. 2 is a conceptual diagram showing the basic configuration of a thin film forming apparatus for carrying out the above method, and FIG. Figure 3 is a simplified explanatory diagram showing the state near the surface of the /IN ceramic substrate, and Figure 4 is a diagram showing the measurement results of the adhesion strength of the metallized layer. 1... AIN ceramics substrate, 4... ion source,
5... Evaporation source, 20... Metallized layer, 21...
Ti metal layer (first metal layer), 22...Ni metal layer (
(second metal layer) Fig. 1 (1) (2) (3) Fig. 3 Fig. 2
Claims (1)
金属層を形成するに当たり、前記第２の金属層の構成金
属の蒸着と、不活性ガスイオンの照射とを併用すること
を特徴とするセラミックスのメタライズ方法。In forming the second metal layer on the first metal layer formed on the ceramic surface, vapor deposition of a constituent metal of the second metal layer and irradiation with inert gas ions are used in combination. How to metalize ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23198189A JPH0393686A (en) | 1989-09-06 | 1989-09-06 | Metallizing of ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23198189A JPH0393686A (en) | 1989-09-06 | 1989-09-06 | Metallizing of ceramics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0393686A true JPH0393686A (en) | 1991-04-18 |
Family
ID=16932075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23198189A Pending JPH0393686A (en) | 1989-09-06 | 1989-09-06 | Metallizing of ceramics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0393686A (en) |
-
1989
- 1989-09-06 JP JP23198189A patent/JPH0393686A/en active Pending
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