JPS6291483A - Metallization for ceramic - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] [Industrial application fields] The present invention relates to a method of metallizing ceramics.

[Background Art and Problems] When bonding ceramics, for example crystals of alumina, nitride, silicon carbide, etc. + A Fl and metal, it is necessary to tightly and tightly spread a metal film on the surface of the ceramic.

In this field, the metallization method refers to a method of adhering a metal film to a ceramic surface as described above, and the resulting metal thin film is called a metallization layer.

The conventional metallization method uses Ti+N on the ceramic surface.
A metal metallized layer is formed by vaporizing a metal such as +, Cu+ AQ, etc. by a vapor deposition method, an ionization vapor deposition method, or the like. In addition to these methods, various methods such as the Mo-Mn method and silver carbonate method have also been proposed.

However, in these methods, the bonding interface between the ceramic surface and the metallized layer is bonded by physical force, so the metallized layer may separate or fall off at the interface between the ceramic and metal layers during use. There are drawbacks.

In addition, in methods such as the Mo-Mn method, very strict control must be exercised on the composition of the Mo-Mn alloy powder, the heating temperature during baking onto the ceramic surface, and the heating atmosphere. Have difficulty.

In addition to methods such as 1-1, metal ion A has recently been applied to ceramics,
Some attempts have been made to form a metallized layer on the ceramic surface, but this has the drawback that metal ions are injected into the ceramic, making it difficult to form a metallized layer several ttm thick on the ceramic surface. Since the iA current is small, a processing time of 115 mm is required,
Practical power is not limited to one person.

[Eleventh aspect/structure of the invention] The present invention solves the problem of peeling and falling off of the metallized layer formed by the conventional metallization method as described in 1-1, and the impracticality of the method using metal ions by one person. do[
- This was done in 1999, and the short answer is to form a metallized layer on the surface of ceramic or wood by using metal thin film forming methods such as metal vapor deposition and ionized vapor deposition, and 71 ions. That is.

Zunao) A metal that is easy to apply wax to the ceramic surface.
For example, a metal such as Ni + CLII Ti + Mo + W is vapor-deposited, and at the same time, gas and/or metal ions are inhabited to form a mixed layer of ceramics and metal, a so-called ion mixing layer, at the interface between the ceramic and the old vapor-deposited metal.
The combined strength of the interfacial layer is several times higher than that of conventional metallized layers.

Hereinafter, implementation of the present invention will be explained.

Figure 1 shows a conceptual diagram of the metallized layer.
Sae is ceramic base +1, for example λ is AQ20a.

Z ro2+ S i3N4. Indicates a JJ plate such as S t C, etc. indicates an ion mixing layer, d indicates an ion that enters the layer, for example, an ion such as N+ H, Ar, etc., and e indicates an ion mixing layer.
is a metal vapor, e.g. T++ N+, Cu+ Cr+
Mo, WTr, and C is a metal vapor formed on the surface of the ion mixing layer due to the combination of ions d and metal vapor e. ' indicates a layer. Here, the mixing layer S is a layer in which ions And and metal evaporated substances E are mixed between the molecules of the ceramic substrate 4 and are aligned with the phase Jl'.

Note that the metallization X layer (consisting of one ion mixing layer and one metal evaporation layer) as used in the present invention.

As a result of the experiment, the strength of the ion mixing layer increases when the thickness is 10 or more, +oA.
It is confirmed that the above-1 is true, but if the ion mixing layer exceeds 100 OA, the interface due to this ion mixing layer may become weak, the heat generated during ion implantation may damage the ceramic, and furthermore, expensive high-energy Since 71 ions are required, the current is preferably +000A or less, and 50 to 500A is best.

The implementation of the present invention will be described below.

FIG. 2 shows a schematic diagram of an apparatus for carrying out the invention.

A bucket-type ion source 4 is provided at the bottom of the vacuum chamber 1, an electron beam heating type evaporation source 3 is provided in the middle, and a rotary sample holder 2 is provided at the top. A bucket-type ion source 4 includes an extraction electrode 5, a plasma electrode 1'), a filament 8, an arc chamber 7, and a gas introduction 1.
19 mag.

Gaseous ions are emitted upward from a bucket-type ion source 4, and evaporated metal is emitted from an electron beam-heated evaporation source 3 to reach a rotating sample holder 2. 1i
Ceramics are placed in the iJ boulder.

Metal vapor deposition and ion implantation on ceramic surfaces are
During metallization, it is not necessary to carry out the entire process from beginning to end, during the initial mixing layer, metal evaporation and ionization are simultaneously performed, and then only evaporation is performed (Jl brazing). The metallization layer can be deposited to the thickness required for IJ or to maximize the soldering strength, typically a few microns, and both can be allowed to function for the time required for metallization. However, if ion implantation is performed from beginning to end, sputtering of the metallized layer by ions may occur, suppressing the growth of the thickness, and causing deterioration in the strength of the metallized layer.

Table 1 shows AQ2031 ZrO2, Si3N4. SiC
is the substrate, and Ni and Mo are thin metals (metallized metals).
This figure shows the results of adhesion strength of a metallized layer obtained by implanting argon ions.

In Table 1, the voltage O means the condition e without ion implantation.
It has a hint of 1. The thickness of the ion mixing layer is determined by the voltage (acceleration voltage), and the properties of the ion mixing layer are thought to change depending on the ion dose.
It is assumed that an ion mixing layer of 0 A is formed. The total thickness of the metallized layer is 57'
Since the adhesive strength exceeding In decreases, the only option is to stay within this range.

From Table IQ test results, it can be seen that the performance is several times higher than that of the iI-layer with metal vapor deposition. Below 1. is an example of using gas ion implantation in combination with metal evaporation.
Even if the method of increasing the input by +1 is carried out corresponding to the actual temperature, the same result will be obtained due to the same cI value.

It is clear that a significant effect can be obtained.

[Effect] As explained below, in the non-invention, metal vapor deposition, gas ions, and metal ions L are applied to the ceramic surface.
)-For (+1), metal evaporation is performed by forming an ion mixing layer, and the ion mixing layer is at the interface between the ceramic surface and the metal evaporation layer, and the ion mixing layer is located at the interface between the ceramic surface and the metal evaporation layer. Since they are closely bonded, the base to which the metal is bonded and the metal vapor deposited layer are easily separated from the metal vapor deposited layer.

It does not fall off and provides an extremely strong bond.

[Brief explanation of drawings]

FIG. 1 is a conceptual diagram of the ion mixing layer. FIG. 2 is a schematic diagram of the apparatus used to practice the invention. 1... Vacuum chamber, 2... Rotating sample holder, 3... Electron beam heating evaporation source (electron gun), 4...
Bucket wedge 1 ion source. Harm 1 Figure

Claims (2)

[Claims] (1) In a method of forming a metallized layer on the surface of a ceramic, a metallized layer is formed by metal vapor deposition, and at the same time, gas ions and/or metal ions are injected into the interface between the ceramic and the metallized layer to mix the ions. A ceramic metallization method characterized by the formation of layers. (2) The method for metallizing ceramics according to claim 1, characterized in that the thickness of the mixing layer is 50 to 1000 Å, and the total thickness of the metallized layer is 5 μm or less.