CN110923654A - Aluminum nitride ceramic metalized substrate and preparation method thereof - Google Patents
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
The invention discloses an aluminum nitride ceramic metalized substrate which comprises an AlN ceramic substrate, an ion implantation Ti layer and magnetron sputtering Ti, W, Mo and Cu layers, wherein the ion implantation Ti layer is positioned on the surface and a certain depth position of the AlN substrate, and the magnetron sputtering Ti, W, Mo and Cu layers are positioned on the ion implantation Ti layer. The invention also discloses a preparation method of the aluminum nitride ceramic metalized substrate. The invention obtains the AlN ceramic metalized substrate by combining a high-energy ion implantation process and a magnetron sputtering process and carrying out heat treatment. According to the invention, Ti ions are injected into the inner surface layer of the substrate through high-energy ions and the Ti metal layer sputtered on the surface in a magnetron sputtering manner is subjected to mutual diffusion bonding with the ceramic substrate through annealing heat treatment, so that the bonding force between the metal film layer and the substrate is effectively improved; the transition through the multilayer metal film effectively relieves the problem of thermal mismatch between the ceramic and the metal layer due to the inconsistency of the thermal expansion coefficients.
Description
Technical Field
The invention relates to a ceramic metalized substrate, in particular to an aluminum nitride ceramic metalized substrate and a preparation method thereof.
Background
Nowadays, information technology is on the rise, electronic components are developing towards high power, multifunction and high density, and integrated circuits enter deep submicron and even nanometer fields from submicron technology, which leads to great increase of heat generated in unit volume of integrated circuits. If the heat is not rapidly dissipated through the integrated circuit board, the integrated circuit is difficult to work normally and even is burnt out, and the failure rate of the circuit is increased by 5-6 times when the working temperature is increased by 25 ℃ every time when the working temperature is calculated to be above the reference temperature (100 ℃). Therefore, a substrate and a packaging material with good thermal conductivity are needed for integrated circuits, and the prerequisite for adapting the electronic substrate and the packaging material to the performance of electronic devices is to have good thermal conductivity. The aluminum nitride ceramic has excellent physical properties of high thermal conductivity, high insulation, low dielectric constant, low dielectric loss and the like, and the dielectric properties of the aluminum nitride ceramic are respectively close to those of Si and aluminum oxide ceramic, so that the aluminum nitride ceramic is widely applied to microelectronics and power devices due to the characteristics. Due to the use of the AlN substrate, a heat dissipation plate and a buffer layer are not needed during packaging, so that the packaging structure is greatly simplified. To achieve widespread use of AlN substrates in integrated circuits, the substrates must be metallized, which is one of the key processes for AlN to be used in electronic packaging. However, the characteristics of poor wettability and difficult bonding of AlN ceramic and metal seriously hinder the application of AlN ceramic in the field of electronic packaging, and therefore, the search for metallization of AlN ceramic substrates is a necessary approach for widespread application.
Because the A1N series compound with strong covalent bond has low reaction ability with metal, poor wettability and difficult metallization, along with the continuous research in recent years, the metallization of A1N ceramic has achieved certain effect, but in practical application, there still exist many problems, mainly manifested in that the overall performance of the metallization layer is not high and unstable, i.e. the adhesion strength and other electric and thermal properties of the metallization layer can not meet the requirements of high-performance electric power and electronic devices at the same time, the application of A1N ceramic is directly influenced, and the stability and reliability of electric power and electronic components are seriously influenced.
At present, a plurality of methods for metalizing the surface of AlN ceramic are available, mainly comprising the following steps: thick film metallization, thin film metallization, co-fired metallization, electroless copper metallization, direct copper (DBC) metallization, and the like, and appropriate metallization techniques can be selected according to the requirements of circuit and device packaging, and no matter which method is adopted, the metallization requirements are consistent in general principle, i.e., the metallization layer has good comprehensive performance, and the metallization layer not only requires firm adhesion strength and excellent sealing property between the metallization layer and a substrate, but also requires a metal/ceramic interface to maintain high thermal conductivity.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide an aluminum nitride ceramic metalized substrate and a preparation method thereof.
The technical scheme adopted by the invention for solving the technical problem is as follows:
an AlN ceramic metalized substrate comprises an AlN ceramic substrate, a metal ion Ti layer is injected on the surface of the aluminum nitride ceramic substrate by adopting a high-energy ion injection process, a Ti film layer is deposited on the ion-injected Ti layer by adopting a magnetron sputtering method, then annealing treatment is carried out in a vacuum tube furnace, and a sample after annealing is deposited with W, Mo and Cu metal layers on the surface of the Ti film layer in sequence by adopting the magnetron sputtering method and then annealing treatment is carried out to obtain the ceramic metalized substrate.
A preparation method of an aluminum nitride ceramic metalized substrate comprises the following steps:
(1) cleaning the aluminum nitride ceramic substrate;
(2) injecting Ti metal ions into the surface of the substrate by adopting a high-energy ion injection process, wherein the metal ion source is a titanium target with the purity of 99.99 percent, and the working air pressure is 6-9 multiplied by 10-4Pa, an implantation voltage of 50-80 kv, and an implantation dose of 7.8 × 1017ions/cm2～8.2×1019ions/cm2；
(3) Depositing a metal Ti film layer on the surface of the ion-implanted Ti layer by adopting a magnetron sputtering process, wherein the target material is a titanium target with the purity of 99.99 percent and the background vacuum degree is 5.6 multiplied by 10-4～2.5×10-3Pa, wherein the sputtering gas is Ar gas (the purity is 99.99%), the working pressure is 2-5 Pa, the sputtering power is 80-160W, and the thickness is 1-3 um;
(4) annealing the ceramic substrate treated by the ion implantation and magnetron sputtering process in a vacuum tube furnace at 800-1000 ℃ for 1-3 h;
(5) and (3) sequentially depositing W, Mo and Cu metal layers on the surface of the annealed sample by adopting the magnetron sputtering process which is the same as the step (3) and has correspondingly optimized process parameters, and annealing.
Compared with the prior art, the invention has the beneficial effects that: according to the AlN ceramic metalized substrate prepared by the invention, Ti ions are injected into the inner surface layer of the substrate through high-energy ions and the Ti metal layer sputtered on the surface in a magnetron manner is subjected to annealing heat treatment and is subjected to mutual diffusion bonding with the ceramic substrate, so that the bonding force between the metal film layer and the substrate is effectively improved; the problem of thermal mismatch caused by inconsistent thermal expansion coefficients between the ceramic and the metal layer is effectively relieved through the transition of the multilayer metal film; meanwhile, the raw materials used by the invention are low in price and low in manufacturing cost, and the method is suitable for industrial popularization.
Drawings
FIG. 1 is a schematic structural diagram of an AlN ceramic metallized substrate of the present invention:
the following are marked in the figure: 1-an AlN ceramic substrate; 2-ion-implanting a Ti layer; 3-magnetron sputtering a Ti layer; 4-magnetron sputtering of a W layer; 5-magnetron sputtering of a Mo layer; 6-magnetron sputtering of a Cu layer.
Detailed Description
In order that the invention may be more readily understood, the following description of the invention is given, together with the accompanying drawings and the detailed description, which are given by way of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, an AlN ceramic metalized substrate includes an AlN ceramic substrate 1, a metal ion Ti layer 2 is implanted into the surface of the aluminum nitride ceramic substrate by a high energy ion implantation process, a Ti metal film layer 3 is deposited on the ion implanted Ti layer by a magnetron sputtering method, then annealing treatment is performed in a vacuum tube furnace, and an annealed sample is deposited with W, Mo, and Cu metal layers 4, 5, and 6 on the surface of the Ti film layer in sequence by the magnetron sputtering method, and then annealing treatment is performed to obtain the ceramic metalized substrate.
A preparation method of an aluminum nitride ceramic metalized substrate comprises the following steps:
(1) cleaning the aluminum nitride ceramic substrate;
(2) injecting Ti metal ions into the surface of the substrate by adopting a high-energy ion injection process, wherein the metal ion source is a titanium target with the purity of 99.99 percent, and the working air pressure is 6-9 multiplied by 10-4Pa, an implantation voltage of 50-80 kv, and an implantation dose of 7.8 × 1017ions/cm2～8.2×1019ions/cm2；
(3) Depositing a metal Ti film layer on the surface of the ion-implanted Ti layer by adopting a magnetron sputtering process, wherein the target material is a titanium target with the purity of 99.99 percent and the background vacuum degree is 5.6 multiplied by 10-4～2.5×10-3Pa, wherein the sputtering gas is Ar gas (the purity is 99.99%), the working pressure is 2-5 Pa, the sputtering power is 80-160W, and the thickness is 1-3 um;
(4) annealing the ceramic substrate treated by the ion implantation and magnetron sputtering process in a vacuum tube furnace at 800-1000 ℃ for 1-3 h;
(5) and (3) sequentially depositing W, Mo and Cu metal layers on the surface of the annealed sample by adopting the magnetron sputtering process which is the same as the step (3) and has correspondingly optimized process parameters, and annealing.
Example 1
A preparation method of an aluminum nitride ceramic metalized substrate comprises the following steps:
And 4, annealing the ceramic substrate treated by the ion implantation and magnetron sputtering process in a vacuum tube furnace at the annealing temperature of 950 ℃ for 3 hours.
Step 7, sputtering a Cu metal layer on the surface of the sputtered molybdenum metal film layer sample, wherein the target material is a copper target with the purity of 99.99 percent and the background vacuum degree of 5.8 multiplied by 10-4Pa, Ar gas (purity 99.99%), working pressure 3.2Pa, sputtering power 120W and film thickness 5 um.
And 8, placing the sample subjected to sputtering of the metal layer in a vacuum tube furnace for annealing treatment, wherein the annealing temperature is 1000 ℃, and the annealing time is 3 hours, so as to obtain the aluminum nitride ceramic metallized substrate.
The above embodiments are merely illustrative of the present invention, and it should be understood that the present invention is not limited thereto, and any modification, equivalent replacement, or improvement made within the method and process of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. The aluminum nitride ceramic metalized substrate is characterized by comprising an AlN ceramic substrate, an ion implantation Ti layer and a magnetron sputtering Ti, W, Mo and Cu layer, wherein the ion implantation Ti layer is positioned on the surface and a certain depth position of the AlN substrate, and the magnetron sputtering Ti, W, Mo and Cu layer is positioned on the ion implantation Ti layer.
2. The AlN ceramic metallized substrate of claim 1, wherein the ion implantation of the Ti layer is performed by implanting Ti metal ions into the surface and a depth of the AlN ceramic substrate by a high-energy ion implantation process, the metal ion source is a titanium target with a purity of 99.99%, and the working gas pressure is 6-9 x 10-4Pa, an implantation voltage of 50-80 kv, and an implantation dose of 7.8 × 1017ions/cm2～8.2×1019ions/cm2。
3. The aluminum nitride ceramic metallized substrate of claim 1, wherein the magnetron sputtered Ti, W, Mo, Cu layers are gradually sputtered onto the sample surface in the order of Ti, W, Mo, Cu by a magnetron sputtering process, the corresponding target purities are all 99.99%, and the background vacuum is 5.6 x 10-4～2.5×10-3Pa, Ar gas (purity 99.99%), working pressure 2-5 Pa, sputtering power 60-200W, and thickness of each film layer about 1-10 um.
4. A preparation method of an aluminum nitride ceramic metalized substrate is characterized by comprising the following steps: the method comprises the following steps:
A. cleaning the aluminum nitride ceramic substrate;
B. injecting Ti metal ions into the surface of the substrate by adopting a high-energy ion injection process, wherein the metal ion source is a titanium target with the purity of 99.99 percent, and the working air pressure is 6-9 multiplied by 10-4Pa, an implantation voltage of 50-80 kv, and an implantation dose of 7.8 × 1017ions/cm2～8.2×1019ions/cm2；
C. Depositing a metal Ti film layer on the surface of the ion-implanted Ti layer by adopting a magnetron sputtering process, wherein the target material is a titanium target with the purity of 99.99 percent and the background vacuum degree is 5.6 multiplied by 10-4～2.5×10-3Pa, wherein the sputtering gas is Ar gas (the purity is 99.99%), the working pressure is 2-5 Pa, the sputtering power is 80-160W, and the thickness is 1-3 um;
D. annealing the ceramic substrate treated by the ion implantation and magnetron sputtering process in a vacuum tube furnace at 800-1000 ℃ for 1-3 h;
E. and (3) sequentially depositing W, Mo and Cu metal layers on the surface of the annealed sample by adopting the magnetron sputtering process which is the same as the step (3) and has correspondingly optimized process parameters, and annealing to obtain the aluminum nitride ceramic metalized substrate.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779494A (en) * | 2020-12-04 | 2021-05-11 | 核工业西南物理研究院 | Surface metallization process of dielectric ceramic filter |
| CN114315427A (en) * | 2022-01-19 | 2022-04-12 | 四川科尔威光电科技有限公司 | Preparation process of metal system film for increasing adhesion between aluminum nitride ceramic and metal layer |
| CN116854502A (en) * | 2023-07-18 | 2023-10-10 | 湖南省新化县长江电子有限责任公司 | Metallized ceramic for new energy automobile |
| CN116986926A (en) * | 2023-09-25 | 2023-11-03 | 苏州博志金钻科技有限责任公司 | Aluminum nitride ceramic surface metallization method |
| CN117835790A (en) * | 2024-03-06 | 2024-04-05 | 四川科尔威光电科技有限公司 | Semiconductor refrigerator substrate metallization method and semiconductor refrigerator metallization substrate |
| CN117835790B (en) * | 2024-03-06 | 2024-06-04 | 四川科尔威光电科技有限公司 | Semiconductor refrigerator substrate metallization method and semiconductor refrigerator metallization substrate |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779494A (en) * | 2020-12-04 | 2021-05-11 | 核工业西南物理研究院 | Surface metallization process of dielectric ceramic filter |
| CN112779494B (en) * | 2020-12-04 | 2022-05-20 | 核工业西南物理研究院 | Surface metallization process of dielectric ceramic filter |
| CN114315427A (en) * | 2022-01-19 | 2022-04-12 | 四川科尔威光电科技有限公司 | Preparation process of metal system film for increasing adhesion between aluminum nitride ceramic and metal layer |
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| CN116986926A (en) * | 2023-09-25 | 2023-11-03 | 苏州博志金钻科技有限责任公司 | Aluminum nitride ceramic surface metallization method |
| CN116986926B (en) * | 2023-09-25 | 2023-12-15 | 苏州博志金钻科技有限责任公司 | Aluminum nitride ceramic surface metallization method |
| CN117835790A (en) * | 2024-03-06 | 2024-04-05 | 四川科尔威光电科技有限公司 | Semiconductor refrigerator substrate metallization method and semiconductor refrigerator metallization substrate |
| CN117835790B (en) * | 2024-03-06 | 2024-06-04 | 四川科尔威光电科技有限公司 | Semiconductor refrigerator substrate metallization method and semiconductor refrigerator metallization substrate |
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Application publication date: 20200327 |