CN205595320U - Ceramic baseplate - Google Patents
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- CN205595320U CN205595320U CN201521123324.0U CN201521123324U CN205595320U CN 205595320 U CN205595320 U CN 205595320U CN 201521123324 U CN201521123324 U CN 201521123324U CN 205595320 U CN205595320 U CN 205595320U
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Abstract
The utility model relates to a ceramic baseplate. This ceramic baseplate (10) include: pottery substrate (20), electrically conductive seeding layer (30), electrically conductive seeding layer (30) are including being located the pottery substrate (20) surface (22) the below ion implantation layer (32) and attach to plasma sedimentary deposit (34) on ion implantation layer (32), and metal thickening layer (40), metal thickening layer (40) formed at electrically conductive seeding layer (30) top.
Description
Technical field
This utility model relates to a kind of ceramic substrate, especially using ceramic wafer as base material and the substrate that is covered with conductor layer on the single or double of this base material.
Background technology
Ceramic substrate has the high feature such as heat-resisting, high electrical insulating properties, high mechanical properties, low-k, low dielectric loss and the thermal coefficient of expansion close with silicon, it is current electronic applications power module package, connects the chip critical material with heat radiation substrate, be widely used in all kinds of electrical equipment and the making etc. of electronic product such as high frequency substrate, heat-conducting substrate.Wherein, surface is covered with the ceramic base copper-clad plate of layers of copper is the most frequently used a kind of ceramic substrate.At present, the manufacture method of ceramic base copper-clad plate mainly includes Direct Bonding copper technology (DBC) and direct copper plating technology (DPC) both.
Direct Bonding copper technology (DBC) is at Al2O3Or after the single or double of AlN ceramic base material is covered with Cu plate, then heat via the environment of high temperature 1065-1085 DEG C, make the surface of Cu plate because of high-temperature oxydation, diffusion and and Al2O3Substrate produces Cu-Cu2O eutectic phase, so that copper coin bonds with ceramic base material and forms ceramic base copper-clad plate.The control of technological temperature is required the most harsh by Direct Bonding copper technology, it is necessary to just can make layers of copper surface melting under 1065-1085 DEG C of extremely stable temperature range is that eutectic phase realizes and the combining closely of ceramic base material, and its manufacturing cost is high and is difficult to solve Al2O3And the problems such as the micro-pore existed between Cu plate or hole so that production capacity and the yield rate of product are greatly affected.Being limited by existing technological level, the lower thickness limit of Cu plate is about 150-300um so that the resolution upper limit of metallic circuit is the most only about 150-300um (with depth-to-width ratio 1:1 as standard).To make fine rule road, special processing mode then must be used thinning for the thickness of copper coin, but this can cause again that surface smoothness is the best and the problem such as cost increase so that the ceramic base copper-clad plate of gained is unsuitable for the eutectic/flip technique of requirement elevated track precision and high-flatness.
Direct copper plating technology (DPC) is copper-clad plate manufacturing technology vacuum coating and electroplating technology combined, i.e. first with vacuum coating technology at Al2O3Or one layer of copper film of AlN ceramic deposited on substrates, then carry out thickening of copper film by electroplating technology.The technological temperature of DPC is generally below 400 DEG C, it is to avoid destruction that material is caused by high temperature or size variation phenomenon.The ceramic base copper-clad plate of gained has the advantages such as high heat radiation, high-reliability, high accurancy and precision and low cost of manufacture, and the upper limit of metallic circuit resolution is about 10-50um (with depth-to-width ratio 1:1 as standard, even can be thinner) and surface smoothness height, thus it is very suitable for the flip/eutectic technology of requirement elevated track precision and high-flatness.
In the prior art, general employing sputtering method prepares DPC ceramic base copper-clad plate.That is, first passing through magnetron sputtering, on the surface of ceramic base material, sputtering layer of metal is as prime coat (also referred to as conductive seed layer), carries out electroplating to add thick copper layer afterwards, thus prepare the ceramic base copper-clad plate of finished product on this prime coat.Fig. 1 is shown the generalized section of the ceramic base copper-clad plate prepared by sputtering method, wherein, ceramic base copper-clad plate 10 includes ceramic base material 20, is positioned at the conductive seed layer 30 above the surface 22 of ceramic base material and is positioned at the Cu coating 42 above this conductive seed layer 30.But, in sputtering method, the energy of the metallic atom sputtered out is typically only about 1-10eV, thus metallic atom and the combination of ceramic substrate surface insecure, the peel strength causing resulting copper layer is relatively low.And, the layers of copper obtained by sputtering method also exists the problems such as pin hole, have impact on its popularization and application.
Utility model content
This utility model is made in view of the above problems, its object is to, it is provided that conductor layer thickness is very thin and has the ceramic substrate of relatively high-bond between conductor layer and ceramic base material.
According to one side of the present utility model, it is proposed that a kind of ceramic substrate, comprising: ceramic base material；Conductive seed layer, this conductive seed layer includes the ion implanted layer being positioned at the lower face of ceramic base material and the plasma deposited layers being attached on ion implanted layer；And metal thickening layer, this metal thickening layer is formed at the top of conductive seed layer.
Preferably, ceramic base material has the thickness of 0.1-10mm, and includes one or more in aluminium oxide ceramics, aluminium nitride ceramics, beryllium oxide ceramics, silicon nitride ceramics, silicon carbide ceramics, boron nitride ceramics, titanium dioxide ceramic, zirconia ceramics, calcium titanate pottery, barium titanate ceramics, strontium titanates, lead titanates, mullite ceramic, steatite ceramic and glass ceramics and their modified ceramic.
Preferably, ion implanted layer is the doped structure that the metallic injected is formed with ceramic base material, its outer surface and the flush of ceramic base material, and inner surface is positioned at the lower face 1-100nm depth of ceramic base material.
Preferably, one or more during the metallic of injection includes Ti, Cr, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and the alloy between them.
Preferably, one or more during the composition of plasma deposited layers includes Ti, Cr, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and the alloy between them.
Preferably, plasma deposited layers includes the metal deposition layer being connected with ion implanted layer and is positioned at the Cu sedimentary of top of metal deposition layer.
Preferably, metal deposition layer be thickness be the Ni layer of 0-500nm, the thickness of Cu sedimentary is 0-500nm.
Preferably, plasma deposited layers includes the metal-oxide sedimentary being connected and thickness is 0-500nm, the top being positioned at metal-oxide sedimentary and metal deposition layer that thickness is 0-500nm and the top being positioned at metal deposition layer and the Cu sedimentary that thickness is 0-500nm with ion implanted layer.
Preferably, metal-oxide sedimentary is NiO layer, and metal deposition layer is Ni or Ni-Cu alloy-layer.
Preferably, metal thickening layer is the Cu layer of the top being formed at conductive seed layer by plating, and it has the thickness of 0.5-25 μm.
In one example, ceramic base material is aluminium oxide ceramics；Ion implanted layer is the doped layer formed with aluminium oxide ceramics base material by Ni of the lower face 0-100nm degree of depth being positioned at ceramic base material；Plasma deposited layers includes being positioned at the first sedimentary above ion implanted layer and is positioned at the second sedimentary above the first sedimentary, wherein, the first sedimentary be thickness be the Ni layer of 50nm, the second sedimentary be thickness be the Cu layer of 50nm；Further, metal thickening layer be thickness be the Cu layer of 2 μm.
In another example, ceramic base material is aluminium nitride ceramics；Ion implanted layer is the doped layer formed with aluminium nitride ceramics base material by Ni, Cu of the lower face 0-80nm degree of depth being positioned at ceramic base material；Plasma deposited layers includes being positioned at the first sedimentary above ion implanted layer and is positioned at the second sedimentary above the first sedimentary, wherein, the first sedimentary be thickness be the Ni-Cu alloy-layer of 30nm, the second sedimentary be thickness be the Cu layer of 100nm；Further, metal thickening layer be thickness be the Cu layer of 5 μm.
In another example, ceramic base material is silicon carbide ceramics；Ion implanted layer is the doped layer formed with silicon carbide ceramics base material by Ni of the lower face 0-40nm degree of depth being positioned at base material；Plasma deposited layers includes being positioned at the first sedimentary above ion implanted layer, is positioned at the second sedimentary above the first sedimentary and is positioned at the 3rd sedimentary above the second sedimentary, wherein, first sedimentary be thickness be the NiO layer of 15nm, second sedimentary be thickness be the Ni layer of 30nm, the 3rd sedimentary be thickness be the Cu layer of 400nm；Further, metal thickening layer be thickness be the Cu layer of 1 μm.
In another example, ceramic base material is beryllium oxide ceramics；The doped layer formed with beryllium oxide ceramics base material by Ni that ion implanted layer includes being positioned at the lower face 20-60nm degree of depth of ceramic base material and the doped layer formed by Cu and beryllium oxide ceramics base material of the lower face 0-20nm degree of depth that is positioned at ceramic base material；Plasma deposited layers includes being positioned at the first sedimentary above ion implanted layer, is positioned at the second sedimentary above the first sedimentary and is positioned at the 3rd sedimentary above the second sedimentary, wherein, first sedimentary be thickness be the NiO layer of 10nm, second sedimentary be thickness be the Ni-Cu alloy-layer of 30nm, the 3rd sedimentary be thickness be the Cu layer of 150nm；Further, metal thickening layer be thickness be the Cu layer of 8 μm.
In another example, ceramic base material is barium titanate ceramics；Ion implanted layer is the doped layer formed with barium titanate ceramics base material by Cr of the lower face 0-5nm degree of depth being positioned at ceramic base material；Plasma deposited layers includes being positioned at the first sedimentary above ion implanted layer and is positioned at the second sedimentary above the first sedimentary, wherein, the first sedimentary be thickness be the Ni layer of 25nm, the second sedimentary be thickness be the Cu layer of 300nm；Further, metal thickening layer be thickness be the Cu layer of 6 μm.
In another example, ceramic base material is boron nitride ceramics；Ion implanted layer is the doped layer formed with boron nitride ceramics base material by Ni, Cr of the lower face 0-20nm degree of depth being positioned at ceramic base material；Plasma deposited layers includes being positioned at the first sedimentary above ion implanted layer and is positioned at the second sedimentary above the first sedimentary, wherein, the first sedimentary be thickness be the Ni layer of 10nm, the second sedimentary be thickness be the Cu layer of 300nm；Further, metal thickening layer be thickness be the Cu layer of 9 μm.
In another example, ceramic base material is zirconia ceramics；Ion implanted layer is the doped layer formed with zirconia ceramics base material by Ni of the lower face 0-10nm degree of depth being positioned at ceramic base material；Plasma deposited layers includes being positioned at the first sedimentary above ion implanted layer and is positioned at the second sedimentary above the first sedimentary, wherein, the first sedimentary be thickness be the Ni-Cu alloy-layer of 40nm, the second sedimentary be thickness be the Cu layer of 250nm；Further, metal thickening layer be thickness be the Cu layer of 3 μm.
According to ceramic substrate of the present utility model, owing to the ion implanted layer in conductive seed layer embeds the internal certain depth of base material, rather than be fully located on substrate surface as magnetron sputtering method, and form doped structure between conductive material particle and the substrate molecule injected, be equivalent to below substrate surface, laid large number of foundation pile, and the plasma deposited layers subsequently formed is connected with ion implanted layer, therefore, between final conductive seed layer and metal thickening layer and the base material prepared, there is higher peel strength.In addition, owing to the size of the conductive material particle in ion implanted layer and plasma deposited layers is nanoscale, thus the density of the material particles injecting and depositing is the most uniform, the angle of particle incidence substrate surface is controlled and incident direction is basically identical, causing the composition surface uniform ground of conductive seed layer and base material, the surface of metal thickening layer is difficult to pin-hole phenomena occur.It addition, by the electric current in adjustment electroplating process, voltage, time etc., the thickness of metal thickening layer can be easily adjusted so that it is be as thin as 0.5 μm.
Accompanying drawing explanation
After reading the following detailed description referring to the drawings, those skilled in the art will be better understood these and other feature of the present utility model, aspect and advantage.For the sake of clarity, accompanying drawing is not drawn necessarily to scale, but some of which part may be exaggerated to show detail.In all of the figs, identical reference number represents same or analogous part, wherein:
Fig. 1 represents the generalized section of the ceramic base copper-clad plate prepared in prior art by sputtering method；
Fig. 2 represents the generalized section of the ceramic substrate according to an embodiment of the present utility model；
Fig. 3 represents the generalized section of the ceramic substrate according to another embodiment of the present utility model；And
Fig. 4 represents the generalized section of the ceramic substrate according to further embodiment of the present utility model.
Reference number:
10 ceramic substrates
20 ceramic base materials
The surface of 22 ceramic base materials
30 conductive seed layer
32 ion implanted layers
34 plasma deposited layers
36 metal-oxide sedimentary
37 metal deposition layers
38 Cu sedimentary
40 metal thickening layers
42 Cu coating.
Detailed description of the invention
Hereinafter, referring to the drawings, embodiment of the present utility model is described in detail.It should be understood readily by those skilled in this art that these descriptions only list exemplary embodiment of the present utility model, and be in no way intended to limit protection domain of the present utility model.Additionally, for the ease of describing the position relationship between each material layer, used herein space relative terms, such as " top " and " lower section ", wherein " top " and " lower section " is for substrate surface.If A layer material is positioned at the more lateral of substrate surface compared with B layer material, then it is assumed that A layer material is positioned at the top of B layer material, and vice versa.
Fig. 2 represents the generalized section of the ceramic substrate according to an embodiment of the present utility model.As shown in Figure 2, the ceramic substrate 10 of this embodiment includes ceramic base material 20, conductive seed layer 30 and metal thickening layer 40, wherein, conductive seed layer 30 includes again the ion implanted layer 32 being positioned at below the surface 22 of ceramic base material and is attached to the plasma deposited layers 34 on this ion implanted layer 32, and metal thickening layer 40 is then formed at the top of conductive seed layer 30.
Ceramic substrate shown in Fig. 2 can be formed by following processing step: ceramic base material carries out pre-treatment (step S1)；Ceramic base material after pre-treatment is one after the other implemented ion implanting and plasma-deposited, to form the ion implanted layer of the lower face being positioned at base material and to be attached to the plasma deposited layers above this ion implanted layer, this ion implanted layer forms conductive seed layer (step S2) together with plasma deposited layers；Metal thickening layer (step S3) is formed above conductive seed layer；And the ceramic substrate of gained is carried out post processing (step S4).
Example as ceramic base material, it is possible to use one or more in aluminium oxide ceramics, aluminium nitride ceramics, beryllium oxide ceramics, silicon nitride ceramics, silicon carbide ceramics, boron nitride ceramics, titanium dioxide ceramic, zirconia ceramics, calcium titanate pottery, barium titanate ceramics, strontium titanates, lead titanates, mullite ceramic, steatite ceramic and glass ceramics and their modified ceramic.Wherein it is preferred to using thickness is that the ceramic wafer of 0.1-10mm is as base material.
In step sl, pre-treatment can be carried out to use the modes such as surface cleaning process, surface deposition processes or surface dewatering process.Surface cleaning processes to be removes on the surface of base material the dirty of attachment by wiping or ultrasonic waves for cleaning etc..Surface deposition processes is exactly the surface overlying last layer deposit at base material, with the hole filled and led up on surface or the physical property improving surface.Surface dewatering processes and is the moisture removed in substrate surface molecule.These pretreatment mode be all conducive to follow-up ion implanting, deposit, the carrying out of the technique such as plating.
In step s 2, the formation of ion implanted layer can realize by the following method: uses conductive material as target, under vacuum conditions, makes the conductive material in target ionize by arcing and produce ion；Then this acceleration of ions is made to obtain the highest energy (for example, 5-100keV) under high-tension electric field；The conductive material ion of high energy then directly clashes into the surface of ceramic base material with the highest speed, and in the certain depth bounds of the lower face that is injected into base material (such as 1-100nm)；Between conductive material ion and the substrate molecule injected, define chemical bond or interstitial structure, thus form doped structure.The outer surface of thus obtained ion implanted layer flushes with the surface of ceramic base material, and its inner surface is then deep into the inside of ceramic base material.By controlling the relevant parameter in ion implantation process, such as injection current, voltage, implantation dosage etc., can adjust ion implanted layer and be deep into the degree of depth within base material.In a preferred injection process, the technological temperature of ion implanting be room temperature to 1000 DEG C, the energy injecting ion is 5-500keV, and the dosage injected is 1.0 × 1012To 1.0 × 1018ions/cm2(it is highly preferred that implantation dosage is 1.0 × 1015To 5.0 × 1016ions/cm2), so that the inner surface of ion implanted layer is positioned at the lower face 5-50nm depth of ceramic base material.In addition, the metal or alloy strong with ceramic base material adhesion can be used to carry out ion implanting, such as, one or more in Ti, Cr, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and the alloy (such as NiCr, TiCr, VCr, CuCr, MoV, NiCrV, TiNiCrNb) between them can be used as the target in ion implantation process.After ion implantation, the metallic of injection forms doped structure, i.e. ion implanted layer with pottery.And, ion implanted layer can include one or more layers doped structure, it is preferable that the metallic of injection includes Ni.
Plasma-deposited may be used without the mode similar with ion implanting and carry out, but apply relatively low voltage and make the ion of conductive material obtain relatively low energy.Such as, vacuum cathode arc depositional mode can be passed through, use argon or oxygen as working gas, carry out plasma-deposited under the vacuum of 0.01-10Pa (preferably 0.1-0.2Pa).The plasma deposited layers of gained is attached to the top of ion implanted layer and is connected with this ion implanted layer.By controlling the various relevant parameters (such as deposition current, voltage, deposit dose etc.) in plasma deposition process, the thickness of plasma deposited layers can be easily adjusted, such as, be adjustable to 1-100nm.In addition, conductive material in plasma deposited layers can be identical or different with the material in ion implanted layer, it is also possible to includes one or more in Ti, Cr, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and the alloy (such as NiCr, TiCr, VCr, CuCr, MoV, NiCrV, TiNiCrNb) between them.And, plasma deposited layers can also include one or more layers, such as, can use two kinds of film systems according to the actual demand of product: the metal-oxide sedimentary/metal deposition layer/Cu sedimentary shown in the metal deposition layer shown in Fig. 3/Cu sedimentary and Fig. 4.
Fig. 3 shows the generalized section of ceramic substrate according to another embodiment of the present utility model.Compared with the ceramic substrate shown in Fig. 2, the plasma deposited layers 34 in the ceramic substrate 10 of this embodiment includes the top being located immediately at ion implanted layer 32 and the metal deposition layer 37 being connected with this ion implanted layer 32 and is positioned at the Cu sedimentary 38 above this metal deposition layer 37.Preferably, metal deposition layer be thickness be the Ni layer of 0-500nm, and the thickness of Cu sedimentary is 0-500nm.Fig. 4 shows the generalized section of ceramic substrate according to further embodiment of the present utility model.Compared with the ceramic substrate shown in Fig. 2 and Fig. 3, plasma deposited layers 34 in the ceramic substrate 10 of this embodiment includes the top being located immediately at ion implanted layer 32 and the metal-oxide sedimentary 36 being connected with this ion implanted layer 32, is positioned at the metal deposition layer 37 above this metal-oxide sedimentary 36 and is positioned at the Cu sedimentary 38 above this metal deposition layer 37, and these three sedimentary all can be prepared by the technique for vacuum coating that technological temperature is room temperature to 1000 DEG C.Wherein, the thickness of metal-oxide sedimentary is 0-500nm, preferably 10-50nm；The thickness of metal deposition layer is 0-500nm, preferably 50-100nm；The thickness of copper deposits is 0-500nm, preferably 100-500nm.As its preferred implementation, can be selected for NiO when forming metal-oxide sedimentary as target, and can be selected for Ni or Ni-Cu alloy (wherein, the mol ratio of Ni Yu Cu is 7:3) as target when forming corresponding metal deposition layer.
Then, in step s3 (i.e., after defining conductive seed layer), one or more in the methods such as plating, chemical plating, vacuum evaporation coating, sputtering can be used to come above conductive seed layer and to form metal thickening layer, to obtain the conductive layer with desired thickness and conductivity.Galvanoplastic be preferably as electroplating velocity is fast, low cost and the material ranges of electrodepositable widely, can be used for Cu, Ni, Sn, Ag and their alloy, etc..Metal thickening layer can have the thickness of 0.1-100 μm, and can be made up of one or more in Al, Mn, Fe, Ti, Cr, Co, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and the alloy between them.In the present embodiment, metal thickening layer is formed at the Cu layer above conductive seed layer preferably by plating, the thickness of this Cu thickening layer is 0.5-25 μm, and easily can be adjusted by the various relevant parameters (such as electroplating current, voltage, time etc.) in control electroplating process.
Finally, in step s 4, prepared ceramic substrate can be carried out post processing.Post processing can include annealing, prevents base material or the conductor fault rupture above it to eliminate the stress being present in ceramic substrate.Post processing can also include surface passivating treatment, to prevent the conductor layer in ceramic substrate to be oxidized easily.Certainly, step S4 is not necessarily required to, it is also possible to cancel this step S4 according to actual needs.
In the ceramic substrate using said method to prepare, owing to the ion implanted layer in conductive seed layer embeds the internal certain depth of base material, rather than be fully located on substrate surface as magnetron sputtering method, and form doped structure between conductive material particle and the substrate molecule injected, be equivalent to below substrate surface, laid large number of foundation pile, and the plasma deposited layers subsequently formed is connected with ion implanted layer, therefore, between final conductive seed layer and metal thickening layer and the base material prepared, there is higher peel strength (such as, 8-10N/mm).In addition, owing to the size of the conductive material particle in ion implanted layer and plasma deposited layers is nanoscale, thus the density of the material particles injecting and depositing is the most uniform, the angle of particle incidence substrate surface is controlled and incident direction is basically identical, causing the composition surface uniform ground of conductive seed layer and base material, the surface of metal thickening layer is difficult to pin-hole phenomena occur.It addition, by the electric current in adjustment electroplating process, voltage, time etc., the thickness of metal thickening layer (such as Cu layer) can be easily adjusted so that it is be as thin as 0.5 μm.
Describe ceramic substrate of the present utility model and manufacture method thereof outlined abovely.Below, in order to promote for understanding of the present utility model, by several embodiments of exemplified ceramic substrate.
(embodiment 1)
Select alumina ceramic plate as ceramic base material.During ion implanting, select Ni target, Ni is injected in the lower face 0-100nm depth bounds of alumina ceramic plate, form the doped structure formed with aluminium oxide ceramics by Ni, i.e. ion implanted layer.Then, Ni target and Cu target is one after the other used in plasma-deposited period, formed above ion implanted layer and include the first sedimentary and the plasma deposited layers of the second sedimentary, wherein, first sedimentary is located immediately at the top of ion implanted layer and is connected with this ion implanted layer, and the second sedimentary is positioned at the top of the first sedimentary.First sedimentary be thickness be the Ni layer of 50nm, and the second sedimentary is thickness is the Cu layer of 50nm.It addition, the metal thickening layer formed above plasma deposited layers is thickness is the Cu layer of 2 μm.
(embodiment 2)
Select al nitride ceramic board as ceramic base material.Ni-Cu alloy target material is selected (wherein during ion implanting, the mol ratio of Ni Yu Cu is 6:4), Ni and Cu is injected in the lower face 0-80nm depth bounds of al nitride ceramic board simultaneously, forms the doped structure being made up of with aluminium nitride ceramics Ni, Cu, i.e. ion implanted layer.Then, Ni-Cu alloy target material and Cu target is one after the other used in plasma-deposited period, formed above ion implanted layer and include the first sedimentary and the plasma deposited layers of the second sedimentary, wherein, first sedimentary is located immediately at the top of ion implanted layer and is connected with this ion implanted layer, and the second sedimentary is positioned at the top of the first sedimentary.First sedimentary be thickness be the Ni-Cu alloy-layer of 30nm, and the second sedimentary is thickness is the Cu layer of 100nm.It addition, the metal thickening layer formed above plasma deposited layers is thickness is the Cu layer of 5 μm.
(embodiment 3)
Select silicon carbide ceramics plate as ceramic base material.During ion implanting, select Ni target, Ni is injected in the lower face 0-40nm depth bounds of silicon carbide ceramics plate, form the doped structure being made up of with silicon carbide ceramics Ni, i.e. ion implanted layer.Then, NiO target, Ni target and Cu target is one after the other used in plasma-deposited period, formed above ion implanted layer and include the first sedimentary, the second sedimentary and the plasma deposited layers of the 3rd sedimentary, wherein, first sedimentary is located immediately at the top of ion implanted layer and is connected with this ion implanted layer, second sedimentary is positioned at the top of the first sedimentary, and the 3rd sedimentary is then positioned at the top of the second sedimentary.First sedimentary be thickness be the NiO layer of 15nm, the second sedimentary be thickness be the Ni layer of 30nm, and the 3rd sedimentary is thickness is the Cu layer of 400nm.It addition, the metal thickening layer formed above plasma deposited layers is thickness is the Cu layer of 1 μm.
(embodiment 4)
Select beryllium oxide ceramics plate as ceramic base material.Ni target and Cu target is one after the other used during ion implanting, Ni and Cu is successively injected into the lower face of beryllium oxide ceramics, forming the doped structure layer being made up of Ni and the doped structure layer being made up of with beryllium oxide ceramics Cu with beryllium oxide ceramics, the two collectively constitutes ion implanted layer.Wherein, Ni and beryllium oxide ceramics the doped structure layer formed is positioned at the lower face 20-60nm degree of depth of beryllium oxide ceramics base material, Cu and beryllium oxide ceramics the doped structure layer formed is positioned at the lower face 0-20nm degree of depth of described beryllium oxide ceramics base material.Then, NiO target, Ni-Cu alloy target material and Cu target is one after the other used in plasma-deposited period, formed above ion implanted layer and include the first sedimentary, the second sedimentary and the plasma deposited layers of the 3rd sedimentary, wherein, first sedimentary is located immediately at the top of ion implanted layer and is connected with this ion implanted layer, second sedimentary is positioned at the top of the first sedimentary, and the 3rd sedimentary is then positioned at the top of the second sedimentary.First sedimentary be thickness be the NiO layer of 10nm, the second sedimentary be thickness be the Ni-Cu alloy-layer of 30nm, and the 3rd sedimentary is thickness is the Cu layer of 150nm.It addition, the metal thickening layer formed above plasma deposited layers is thickness is the Cu layer of 8 μm.
(embodiment 5)
Select barium titanate ceramics plate as ceramic base material.During ion implanting, select Cr target, Cr is injected in the lower face 0-5nm depth bounds of barium titanate ceramics, form the doped structure being made up of with barium titanate ceramics Cr, i.e. ion implanted layer.Then, Ni target and Cu target is one after the other used in plasma-deposited period, formed above ion implanted layer and include the first sedimentary and the plasma deposited layers of the second sedimentary, wherein, first sedimentary is located immediately at the top of ion implanted layer and is connected with this ion implanted layer, and the second sedimentary is positioned at the top of the first sedimentary.First sedimentary be thickness be the Ni layer of 25nm, and the second sedimentary is thickness is the Cu layer of 300nm.It addition, the metal thickening layer formed above plasma deposited layers is thickness is the Cu layer of 6 μm.
(embodiment 6)
Select boron nitride ceramics as ceramic base material.Ni-Cr alloy target is selected (wherein during ion implanting, the mol ratio of Ni Yu Cr is 9:1), Ni and Cr is injected in the lower face 0-20nm depth bounds of boron nitride ceramics plate simultaneously, forms the doped structure being made up of with boron nitride ceramics Ni, Cr, i.e. ion implanted layer.Then, Ni target and Cu target is one after the other used in plasma-deposited period, formed above ion implanted layer and include the first sedimentary and the plasma deposited layers of the second sedimentary, wherein, first sedimentary is located immediately at the top of ion implanted layer and is connected with this ion implanted layer, and the second sedimentary is positioned at the top of the first sedimentary.First sedimentary be thickness be the Ni layer of 10nm, and the second sedimentary is thickness is the Cu layer of 300nm.It addition, the metal thickening layer formed above plasma deposited layers is thickness is the Cu layer of 9 μm.
(embodiment 7)
Select zirconia ceramics plate as ceramic base material.During ion implanting, select Ni target, Ni is injected in the lower face 0-10nm depth bounds of zirconia ceramics plate, form the doped structure being made up of with zirconia ceramics Ni, i.e. ion implanted layer.Then, Ni-Cu alloy target material and Cu target is one after the other used in plasma-deposited period, formed above ion implanted layer and include the first sedimentary and the plasma deposited layers of the second sedimentary, wherein, first sedimentary is located immediately at the top of ion implanted layer and is connected with this ion implanted layer, and the second sedimentary is positioned at the top of the first sedimentary.First sedimentary be thickness be the Ni-Cu alloy-layer of 40nm, and the second sedimentary is thickness is the Cu layer of 250nm.It addition, the metal thickening layer formed above plasma deposited layers is thickness is the Cu layer of 3 μm.
Above-described content is only referred to preferred embodiment of the present utility model.But, this utility model is not limited to the specific embodiment described in literary composition.Those skilled in the art will readily occur to, and in the range of without departing from main idea of the present utility model, these embodiments can carry out various obvious amendment, adjust and replace, with make it suitable for specific situation.It practice, protection domain of the present utility model is defined by the claims, and those skilled in the art can be included it is envisioned that other example.If other example such has the structural element of the literal language zero difference with claim; if or they include that the literal language with claim has the equivalent structural elements of non-limiting difference, then they will be within the scope of the claims.
Claims (17)
1. a ceramic substrate, including:
Ceramic base material；
Conductive seed layer, described conductive seed layer includes the ion implanted layer being positioned at the lower face of described ceramic base material and is attached to the plasma deposited layers on described ion implanted layer；And
Metal thickening layer, described metal thickening layer is formed at the top of described conductive seed layer.
Ceramic substrate the most according to claim 1, it is characterized in that, described ceramic base material has the thickness of 0.1-10mm, and includes the one in aluminium oxide ceramics, aluminium nitride ceramics, beryllium oxide ceramics, silicon nitride ceramics, silicon carbide ceramics, boron nitride ceramics, titanium dioxide ceramic, zirconia ceramics, calcium titanate pottery, barium titanate ceramics, strontium titanates, lead titanates, mullite ceramic, steatite ceramic and glass ceramics and their modified ceramic.
Ceramic substrate the most according to claim 1, it is characterized in that, described ion implanted layer is the doped structure that the metallic injected is formed with described ceramic base material, its outer surface and the flush of described ceramic base material, and inner surface is positioned at the lower face 1-100nm depth of described ceramic base material.
Ceramic substrate the most according to claim 3, it is characterised in that the metallic of described injection includes the one in Ti, Cr, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and the alloy between them.
Ceramic substrate the most according to claim 1, it is characterised in that the composition of described plasma deposited layers includes the one in Ti, Cr, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and the alloy between them.
Ceramic substrate the most according to claim 1, it is characterised in that described plasma deposited layers includes the metal deposition layer being connected with described ion implanted layer and is positioned at the Cu sedimentary of top of described metal deposition layer.
Ceramic substrate the most according to claim 6, it is characterised in that described metal deposition layer be thickness be the Ni layer of 0-500nm, the thickness of described Cu sedimentary is 0-500nm.
Ceramic substrate the most according to claim 1, it is characterized in that, described plasma deposited layers includes the metal-oxide sedimentary being connected and thickness is 0-500nm, the top being positioned at described metal-oxide sedimentary and metal deposition layer that thickness is 0-500nm and the top being positioned at described metal deposition layer and the Cu sedimentary that thickness is 0-500nm with described ion implanted layer.
Ceramic substrate the most according to claim 8, it is characterised in that described metal-oxide sedimentary is NiO layer, described metal deposition layer is Ni or Ni-Cu alloy-layer.
Ceramic substrate the most according to claim 1, it is characterised in that described metal thickening layer is the Cu layer of the top being formed at described conductive seed layer by plating, and it has the thickness of 0.5-25 μm.
11. ceramic substrates according to claim 1, it is characterised in that:
Described ceramic base material is aluminium oxide ceramics；
Described ion implanted layer is the doped layer formed with aluminium oxide ceramics base material by Ni of the lower face 0-100nm degree of depth being positioned at described ceramic base material；
Described plasma deposited layers includes the first sedimentary being positioned at above described ion implanted layer and is positioned at the second sedimentary above described first sedimentary, wherein, described first sedimentary be thickness be the Ni layer of 50nm, described second sedimentary be thickness be the Cu layer of 50nm；And
Described metal thickening layer be thickness be the Cu layer of 2 μm.
12. ceramic substrates according to claim 1, it is characterised in that:
Described ceramic base material is aluminium nitride ceramics；
Described ion implanted layer is the doped layer formed with aluminium nitride ceramics base material by Ni, Cu of the lower face 0-80nm degree of depth being positioned at described ceramic base material；
Described plasma deposited layers includes the first sedimentary being positioned at above described ion implanted layer and is positioned at the second sedimentary above described first sedimentary, wherein, described first sedimentary be thickness be the Ni-Cu alloy-layer of 30nm, described second sedimentary be thickness be the Cu layer of 100nm；And
Described metal thickening layer be thickness be the Cu layer of 5 μm.
13. ceramic substrates according to claim 1, it is characterised in that:
Described ceramic base material is silicon carbide ceramics；
Described ion implanted layer is the doped layer formed with silicon carbide ceramics base material by Ni of the lower face 0-40nm degree of depth being positioned at described base material；
Described plasma deposited layers includes being positioned at the first sedimentary above described ion implanted layer, is positioned at the second sedimentary above described first sedimentary and is positioned at the 3rd sedimentary above described second sedimentary, wherein, described first sedimentary be thickness be the NiO layer of 15nm, described second sedimentary be thickness be the Ni layer of 30nm, described 3rd sedimentary be thickness be the Cu layer of 400nm；And
Described metal thickening layer be thickness be the Cu layer of 1 μm.
14. ceramic substrates according to claim 1, it is characterised in that:
Described ceramic base material is beryllium oxide ceramics；
The doped layer formed with beryllium oxide ceramics base material by Ni that described ion implanted layer includes being positioned at the lower face 20-60nm degree of depth of described ceramic base material and the doped layer formed by Cu and beryllium oxide ceramics base material of the lower face 0-20nm degree of depth that is positioned at described ceramic base material；
Described plasma deposited layers includes being positioned at the first sedimentary above described ion implanted layer, is positioned at the second sedimentary above described first sedimentary and is positioned at the 3rd sedimentary above described second sedimentary, wherein, described first sedimentary be thickness be the NiO layer of 10nm, described second sedimentary be thickness be the Ni-Cu alloy-layer of 30nm, described 3rd sedimentary be thickness be the Cu layer of 150nm；And
Described metal thickening layer be thickness be the Cu layer of 8 μm.
15. ceramic substrates according to claim 1, it is characterised in that:
Described ceramic base material is barium titanate ceramics；
Described ion implanted layer is the doped layer formed with barium titanate ceramics base material by Cr of the lower face 0-5nm degree of depth being positioned at described ceramic base material；
Described plasma deposited layers includes the first sedimentary being positioned at above described ion implanted layer and is positioned at the second sedimentary above described first sedimentary, wherein, described first sedimentary be thickness be the Ni layer of 25nm, described second sedimentary be thickness be the Cu layer of 300nm；And
Described metal thickening layer be thickness be the Cu layer of 6 μm.
16. ceramic substrates according to claim 1, it is characterised in that:
Described ceramic base material is boron nitride ceramics；
Described ion implanted layer is the doped layer formed with boron nitride ceramics base material by Ni, Cr of the lower face 0-20nm degree of depth being positioned at described ceramic base material；
Described plasma deposited layers includes the first sedimentary being positioned at above described ion implanted layer and is positioned at the second sedimentary above described first sedimentary, wherein, described first sedimentary be thickness be the Ni layer of 10nm, described second sedimentary be thickness be the Cu layer of 300nm；And
Described metal thickening layer be thickness be the Cu layer of 9 μm.
17. ceramic substrates according to claim 1, it is characterised in that:
Described ceramic base material is zirconia ceramics；
Described ion implanted layer is the doped layer formed with zirconia ceramics base material by Ni of the lower face 0-10nm degree of depth being positioned at described ceramic base material；
Described plasma deposited layers includes the first sedimentary being positioned at above described ion implanted layer and is positioned at the second sedimentary above described first sedimentary, wherein, described first sedimentary be thickness be the Ni-Cu alloy-layer of 40nm, described second sedimentary be thickness be the Cu layer of 250nm；And
Described metal thickening layer be thickness be the Cu layer of 3 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109293351A (en) * | 2018-09-28 | 2019-02-01 | 广东山摩新材料科技有限公司 | A kind of dichroite-mullite refractory slab and preparation method thereof |
| CN110923654A (en) * | 2019-12-13 | 2020-03-27 | 新昌中国计量大学企业创新研究院有限公司 | Aluminum nitride ceramic metalized substrate and preparation method thereof |
| CN111755814A (en) * | 2020-05-22 | 2020-10-09 | 深圳陶陶科技有限公司 | Antenna manufacturing method and mobile device |
| CN112010680A (en) * | 2019-05-30 | 2020-12-01 | 武汉光谷创元电子有限公司 | Microwave dielectric ceramic device and its manufacturing method |
| CN112779494A (en) * | 2020-12-04 | 2021-05-11 | 核工业西南物理研究院 | Surface metallization process of dielectric ceramic filter |
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- 2015-12-31 CN CN201521123324.0U patent/CN205595320U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109293351A (en) * | 2018-09-28 | 2019-02-01 | 广东山摩新材料科技有限公司 | A kind of dichroite-mullite refractory slab and preparation method thereof |
| CN112010680A (en) * | 2019-05-30 | 2020-12-01 | 武汉光谷创元电子有限公司 | Microwave dielectric ceramic device and its manufacturing method |
| CN110923654A (en) * | 2019-12-13 | 2020-03-27 | 新昌中国计量大学企业创新研究院有限公司 | Aluminum nitride ceramic metalized substrate and preparation method thereof |
| CN111755814A (en) * | 2020-05-22 | 2020-10-09 | 深圳陶陶科技有限公司 | Antenna manufacturing method and mobile device |
| CN111755814B (en) * | 2020-05-22 | 2023-03-21 | 深圳陶陶科技有限公司 | Antenna manufacturing method and mobile device |
| CN112779494A (en) * | 2020-12-04 | 2021-05-11 | 核工业西南物理研究院 | Surface metallization process of dielectric ceramic filter |
| CN112779494B (en) * | 2020-12-04 | 2022-05-20 | 核工业西南物理研究院 | Surface metallization process of dielectric ceramic filter |
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