CN106298118A - Thin film resistor and manufacture method thereof - Google Patents
Thin film resistor and manufacture method thereof Download PDFInfo
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- CN106298118A CN106298118A CN201610659515.1A CN201610659515A CN106298118A CN 106298118 A CN106298118 A CN 106298118A CN 201610659515 A CN201610659515 A CN 201610659515A CN 106298118 A CN106298118 A CN 106298118A
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- base material
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- resistive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/003—Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
Abstract
The present invention relates to thin film resistor and manufacture method thereof.A kind of method manufacturing thin film resistor (100), including: step S1, base material (10) is carried out pre-treatment；Step S2, uses target, the surface (12) of base material is carried out ion implanting and/or plasma-deposited process, to form resistive layer (14) on the surface of base material；And step S3, electrode (18) is formed in the both sides of resistive layer.
Description
Technical field
The present invention relates to thin film resistor and manufacture method thereof, this thin film resistor is particularly suited for microelectronic product and table
Face mounting technology (Surface Mount Technology, be called for short SMT), as the passive electronic circuit component in circuit and/
Or carrying electronic circuit component.
Background technology
Thin film resistor manufacturing technology is integrated with semiconductor fabrication process and thick film manufacturing process, uses sputter coating, heat
The technology of the advanced person such as process, photoetching, laser resistor trimming and technique, growing up the most rapidly.Chip thin film fixed resistance
Device combines " light, thin, short, little " and " in high precision, the low-temperature coefficient " of tradition precision resistance of chip thick film fixed resister
Advantage, be a kind of be suitable for SMT manufacture Novel resistor, the application aspect at high frequency and analog circuit can substitute tradition
Metal film resistor, and in manufacturing cost and use cost, be better than traditional metal film resistor.
Except above-mentioned advantage, thin film resistor also requires that the structure of resistive layer and property retention are stable, heat-resisting, corrosion-resistant
Deng.In order to reach that temperature coefficient is low and the requirement such as resistive layer steady quality, it is necessary to thin film resistor to be carried out heat treatment, so that
The structure of film layer and performance become stable.It is said that in general, thin film can introduce multiple crystal defect in growth course, and through moving back
Fire processes and can reduce defect present in thin film growth.Additionally, different crystal structure orientations and composition also can be to resistive films
The performance of layer produces considerable influence.Such as, in heat treatment process, along with the alloying component of Ni-Cr alloy thin film is different, it resists
Oxidability also differs, and the resistance of film layer can be due to insulating properties oxide Cr2O3Increase and acutely increase.Accordingly, it would be desirable to formulate
More reasonably preparation technology, the heat treatment method for example with following: baking oven inflated with nitrogen or the hydrogen to 400 DEG C, keep 30
Minute to eliminate stress；Rapid thermal treatment, after at 450 DEG C, heat treatment reaches 600 seconds, resistance no longer changes；At SiOxWith N2's
Under protection, anneal 1 hour at 400 DEG C and be incubated 24 hours at 200 DEG C.
Nearest research has recognized that the mechanical strength of thin film and residual stress are on electromigratory impact.Electromigration can cause
The reliability and stability problem of circuit, another film resiativity relevant to electric property then can the work of decision-making circuit
Whether performance can normally play.Therefore, in order to enable the circuitry to reliably long-term work, it is necessary to assure thin film resistor has conjunction
Suitable resistivity and electric property are the most stable, that is the good quality of resistive layer to be ensured.Additionally, surface topography is to electricity
There is dimensional effect in the impact of resistance rate in the thinnest thin film, film resiativity is affected the biggest by its surface topography.Along with
The development trend of circuit slimming, film surface appearance status in relative electronic components makes is got over important.
In the prior art, the conventional flow process manufacturing thin film resistor is: first at dielectric substrate such as glass baseplate or
On ceramic base material, form thin film resistive layer by sputtering method or vacuum vapor deposition method, define resistance in lithographic photoetch mode afterwards
Material and conductive pattern, then repair resistance material with focusing laser beam to accurately control resistance value, finally cut insulation
Substrate and form discrete thin film resistor., in sputtering or vacuum evaporation technology, the atom sputtering or evaporating is usual
Only there is the low-yield of 1-10eV, and the adhesion between substrate is poor, cause the resistive layer of gained to be prone to from substrate desquamation.
And, there is residual stress and structural instability in this resistive layer, and there is pin hole and the defect such as surface roughness is high.This
Outward, the definition of resistance material and wire pattern is formed with the optical lithography of similar manufacture of semiconductor, and in photo-etching process
Need to use in a large number chemical drugs, thus add the cost that waste water processes and environmental pollution is relevant.It addition, this flow process is to absolutely
The quality requirements of edge substrate is at a relatively high, it is necessary to provide surface flatness and the goodish dielectric substrate of fineness, in order to make follow-up
Lithographic photoetch equipment can correctly align, and reduce the film surface appearance impact on resistivity.Accordingly, it would be desirable in advance
Dielectric substrate is ground and polishes reducing its surface roughness, and this will increase many manufacturing costs.
Summary of the invention
The present invention makes in view of said circumstances, its object is to, it is provided that a kind of have between base material and resistive layer
There are the thin film resistor high compared with the quality of forming film of high-bond and resistive layer and the method manufacturing this thin film resistor.
First technical scheme of the present invention is a kind of method manufacturing thin film resistor, and it comprises the following steps: to base material
Carry out pre-treatment (S1)；Use target, the surface of base material is carried out ion implanting and/or plasma-deposited process, with at base
Resistive layer (S2) is formed on the surface of material；And, electrode (S3) is formed in the both sides of resistive layer.
Second technical scheme of the present invention is, in first scheme, in step s 2, the surface of base material is first carried out ion
Plasma-deposited process is carried out after injection.
3rd technical scheme of the present invention is, in first scheme, in step s 2, one after the other uses first,
Two ... N target, the surface of base material is formed first, second ... the N resistive layer being arranged in order from inside to outside.
4th technical scheme of the present invention is that in first scheme, manufacture method also includes: before step S2, at base
Indentation is formed on the surface of material；Upon step s 2, before S3, it is formed with the base material of resistive layer along indentation segmentation, in order to
Obtain multiple thin film resistor.
5th technical scheme of the present invention is, in first scheme, step S1 includes base material is carried out processed, corona
One or more in process, gas ion injection process, Cement Composite Treated by Plasma, surface coarsening process.
6th technical scheme of the present invention is, in first scheme, step S2 be additionally included in carry out ion implanting and/or etc.
After plasma deposition, by sputtering or evaporation, the component of another target is deposited on the surface of base material.
7th technical scheme of the present invention is that, in first scheme, step S3 includes: use target, the both sides to base material
Face carries out ion implanting and/or plasma-deposited process, to form at least some of of electrode.
8th technical scheme of the present invention is, in first or alternative plan, during ion implanting, the ion of target obtains
Obtain the energy of 1-1000keV, be injected into the degree of depth of lower face 5-500nm of base material and constitute ion implanted layer.
9th technical scheme of the present invention is, in first or alternative plan, in plasma-deposited period, target from
Son obtains the energy of 1-1000eV, is deposited to the surface of base material and constitutes the plasma that thickness is 10-1000nm and sink
Lamination.
Tenth technical scheme of the present invention is, in any one of the first to the 7th scheme, base material includes ceramic base material, silicon
One or more in base material, glass baseplate and organic polymer base material.
11st technical scheme of the present invention is, in any one of the first to the 7th scheme, target include metal targets,
One or more in oxide target material, nitride target, metal suicide target.
12nd technical scheme of the present invention is, in the 11st scheme, metal targets include Ti, Ta, Cr, Ni, Al,
One or more in Cu, Ag, Au, V, Zr, Mo, Nb, In, Sn, Tb, Be, Ca, Mg and the alloy between them.
13rd technical scheme of the present invention is that, in the 11st scheme, oxide target material includes Ni, Cr, Al, Ta, Ca
Or the oxide of Mg or the combination of these oxides.
14th technical scheme of the present invention is, in the 11st scheme, nitride target includes Ni, Cr, Be, Al or Ta
Nitride or the combination of these nitride.
15th technical scheme of the present invention is a kind of thin film resistor, comprising: base material；The surface of base material is formed
Resistive layer, resistive layer includes ion implanted layer and/or plasma deposited layers；And, the electricity formed in the both sides of resistive layer
Pole.
16th technical scheme of the present invention is, in the 15th scheme, ion implanted layer is by injection material and base material
The doped structure of composition, its outer surface flushes with the surface of base material, and inner surface is positioned at lower face 5-500nm of base material
The degree of depth.
17th technical scheme of the present invention is that, in the 15th scheme, plasma deposited layers is located immediately at base material
Surface, or it is positioned at the top of ion implanted layer.
18th technical scheme of the present invention is, in the 15th scheme, resistive layer includes being arranged in order from inside to outside
First, second ... N resistive layer.
19th technical scheme of the present invention is, in the 15th scheme, electrode is included in the two sides formation of base material
Ion implanted layer and/or plasma deposited layers.
20th technical scheme of the present invention is that, in any one of the 15th to the 19th scheme, base material includes pottery
One or more in base material, silicon substrate, glass baseplate and organic polymer base material.
21st technical scheme of the present invention is, in any one of the 15th to the 19th scheme, forms resistive layer
Material include one or more in metal, oxide, nitride, metal silicide.
22nd technical scheme of the present invention is that, in the 21st scheme, oxide includes Ni, Cr, Al, Ta, Ca
Or the oxide of Mg or the combination of these oxides.
23rd technical scheme of the present invention is that, in the 21st scheme, nitride includes Ni, Cr, Be, Al or Ta
Nitride or the combination of these nitride.
According to the present invention, during ion implanting, the ion of conductive material is injected into base material forcibly with the highest speed
Inside or the inside of resistive layer that is previously formed, and between base material or resistive layer, form doped structure, be equivalent at base material or
The lower face of resistive layer defines large number of foundation pile.Owing to there is foundation pile and follow-up prepared resistive layer and this foundation pile phase
Even, between resistive layer and the base material thus on the final thin film resistor prepared or resistive layer adhesion each other very
Height, far above the adhesion obtained by magnetron sputtering in prior art.In plasma-deposited period, the ion of conductive material
Under the effect of accelerating field, fly to base material or the surface of preformed resistive layer at a relatively high speed, with base material or resistive layer it
Between form bigger adhesion so that resistive layer is not easy the surface from base material or previous resistive layer comes off or peels off.Additionally,
It is generally of nano level size for ion implanting and plasma-deposited conductive material ion, is injecting or during deposition
Distribution is more uniform, and little to the incident angle difference of substrate surface.It is accordingly possible to ensure the surface tool of gained resistive layer
There are the good uniformity and compactness, it is not easy to pin-hole phenomena occurs, easily prepare the thin film resistor that quality of forming film is good.
Accompanying drawing explanation
After reading the following detailed description referring to the drawings, those skilled in the art will be better understood this of the present invention
A little and other feature, aspect and advantage.For the sake of clarity, accompanying drawing is not drawn necessarily to scale, but some of which part
Detail may be exaggerated to show.In all of the figs, identical reference number represents same or analogous part, its
In:
Fig. 1 is the flow chart representing the method manufacturing thin film resistor according to the first embodiment of the invention；
Fig. 2 (a) is to illustrate each step corresponding product generalized section with method shown in Fig. 1 to 2 (c)；
Fig. 3 (a) is to the section signal that 3 (j) is the various resistive layers being shown through the thin film resistor that method shown in Fig. 1 prepares
Figure；
Fig. 4 is the generalized section representing membrane according to the invention resistor；
Fig. 5 is the flow chart representing the method manufacturing thin film resistor second embodiment of the invention；
Fig. 6 is the top view illustrating and forming impressed base material；
Fig. 7 (a) is to illustrate each step corresponding product generalized section with method shown in Fig. 5 to 7 (d)；And
Fig. 8 schematically shows the ion implanting of the present invention and the fundamental diagram of plasma deposition method.
Reference number:
100 thin film resistors
10 base materials
The surface of 12 base materials
14 resistive layers
141 ion implanted layers
142 plasma deposited layers
143 sputtering depositing layer (or vapor deposition layer)
The side of 16 base materials
18 electrodes
200 thin film resistors
20 base materials
The surface of 22 base materials
24 resistive layers
241 ion implanted layers
242 plasma deposited layers
The side of 26 base materials
28 electrodes
30 indentations.
Detailed description of the invention
Hereinafter, referring to the drawings, embodiments of the present invention are described in detail.It will be appreciated by those skilled in the art that these
Describe the exemplary embodiment only listing the present invention, and be in no way intended to limit protection scope of the present invention.Such as, at this
Element or feature described in a bright accompanying drawing or embodiment can be shown with in other accompanying drawings one or more or embodiment
Other element gone out or feature combine.Additionally, for the ease of describing the position relationship between each material layer, used herein
Space relative terms, such as " top " and " lower section " and " interior " and " outward " etc., these terms are all the tables relative to base material
For face.Such as, if A layer material is located towards on the direction outside base material relative to B layer material, then it is assumed that A layer material
Being positioned at top or the outside of B layer material, vice versa.
Fig. 1 is the flow chart representing the method manufacturing thin film resistor according to the first embodiment of the invention.The party
Method comprises the following steps: base material carries out pre-treatment (step S1)；Use target, the surface of base material is carried out ion implanting and/
Or plasma-deposited process, to form resistive layer (step S2) on the surface of base material；And, formed in the both sides of resistive layer
Electrode (step S3).Fig. 2 (a) is to illustrate each step corresponding product generalized section with method shown in Fig. 1 to 2 (c).Figure
3 (a) to 3 (j) is the generalized section of the various resistive layers being shown through the thin film resistor that method shown in Fig. 1 prepares.
In the manufacture process of thin film resistor, the base material used can include ceramic base material, silicon substrate, glass baseplate
With one or more in organic polymer base material.Wherein, ceramic base material can include aluminium oxide ceramics, aluminium nitride ceramics, oxidation
Beryllium pottery, silicon nitride ceramics, silicon carbide ceramics, boron nitride ceramics, titanium dioxide ceramic, zirconia ceramics, calcium titanate pottery, titanium
One in acid titanate ceramics, strontium titanates, lead titanates, mullite ceramic, steatite ceramic and glass ceramics and their modified ceramic
Or it is multiple.Organic polymer base material can include PI, PTO, PC, PSU, PES, PPS, PS, PE, PP, PEI, PTFE, PEEK, PA,
The flexible parent metals such as PET, PEN, LCP, PPA and polyester based resin, acetate system resin, polyether sulfone system resin, polycarbonate-based
Resin, polyamide series resin, polyimides system resin, polyolefin-based resins, (methyl) acrylic resin, polyvinyl chloride tree
Fat, polyvinylidene chloride resin, polystyrene resin, polyvinyl alcohol resin, poly-arylation system resin, polyphenylene sulfide
It is one or more in the rigid substrates such as resin.
When the surface 12 of base material 10 is carried out pre-treatment, processed, sided corona treatment, gas ion can be used to inject
One or more in process, Cement Composite Treated by Plasma, surface coarsening process, in order to remove the moisture of substrate surface, improve base material
The activity on surface or hydrophilicity etc..
Processed is exactly that the moisture removing substrate surface is so that the carrying out of the technique such as subsequent deposition, plating.At base material
Surface layer in can be inevitably present moisture, if be dehydrated deficiently, then moisture may enter and be formed at
In the resistive layer of substrate surface, cause the adhesion between substrate surface and resistive layer to reduce and make resistive layer be easily peeled off, take off
Fall, and also can result in degradation under the pliability of base material and folding resistance.In actual use, the ageing of performance of thin film resistor
And lost efficacy and mainly caused by combined influences such as temperature, humidity and electric stress, in the presence of thin film resistive layer has moisture, voltage
Metal electro-migration, and accelerated ageing process can be caused.When carrying out processed, heating or plasma can be used simply
Method.Alternatively, it is also possible to use ion beam irradiation method to be dehydrated, i.e. under vacuum conditions, with ion beam irradiation base material
Surface, discharges produced steam simultaneously.While the gas ion released by ion gun is accelerated, base material applies
Voltage and between gas ion and base material, produce gravitation or repulsion effect, there is electric charge deformation, thus promote base material in vacuum
The lower short time will be dehydrated.In such manner, it is possible to fully and rapidly remove moisture and some impurity that substrate surface exists.
Additionally, lance driving device (such as hydrogen torch, direct current plasma spray gun, AC plasma spray gun and penetrate also can be used
Frequently in plasma gun any one) gas ion (such as He, H ion) is injected in base material, in order to strengthen base material table
Face activity.This method can be described as gas ion injection and processes, and wherein the implantation concentration of gas ion can be 1010To 1014cm-3,
Implantation Energy can be 50KeV to 10MeV, and implantation dosage can be 1015To 1018cm-2, ion beam incident angle may be selected to be deviation
The normal of substrate surface reaches 5-15 °, to prevent channelling effect.Corona treatment process refers to, by supplying from high frequency electric source
High-frequency high-voltage output puts between the sparking electrode of corona treatment plant and ground connection roller, thus produces corona between which
Electric discharge, and under this corona discharge situation by ground connection roller make the base material of such as film like by and table to this base material simultaneously
Face carries out sided corona treatment, and this can the surface of activated substrate or strengthen its hydrophilic effectively.The intensity of sided corona treatment is according to base
Material and use desired intensity, usually about 200 to 2000W.If intensity is too low, then there is be difficult at base material whole
The tendency of stable corona discharge is obtained on width.If intensity is too high, then exists and cause base material easily to produce because of produced heat
Wrinkles etc. are inclined to.It addition, in order to improve the adhesion between resistive layer and base material, in step sl base material can be carried out surface
Roughening treatment, to increase the roughness of substrate surface, thus strengthens anchoring effect.
After base material is carried out pre-treatment, use target, the surface 12 of base material 10 is carried out ion implanting and/or etc. from
Daughter deposition processes, to form resistive layer 14 (step S2) on the surface of base material.Example as target, it is possible to use metal
One or more in target, oxide target material, nitride target, metal suicide target, it is also possible to use by metal and two
The target of silicon oxide composition.Metal targets such as can include Ti, Ta, Cr, Ni, Al, Cu, Ag, Au, V, Zr, Mo, Nb, In, Sn,
One or more in Tb, Be, Ca, Mg and the alloy between them.Oxide target material such as can include Ni, Cr, Al, Ta,
The oxide of Ca or Mg or the combination of these oxides.Nitride target such as can include the nitridation of Ni, Cr, Be, Al or Ta
Thing or the combination of these nitride.Metal suicide target such as can include titanium silicide, zirconium silicide, tantalum silicide, tungsten silicide etc..
Wherein, the preparation of oxide target material can use high-temperature sintering process to carry out, such as, can be less than 1 micron by mean diameter
Oxide powder is blended and is in harmonious proportion pelletize with certain atomic number ratio in high temperature furnace, and applies certain pressure (1-
10ton/cm2) make powder molding, import the most again oxygen and at 500-2000 DEG C sinter molding.Similarly, nitride target
Preparation high-temperature sintering process can also be used to carry out, the gas imported in the case is nitrogen rather than oxygen.
In step s 2, can only carry out ion implanting process, conductive material is injected into the lower face of base material, with shape
Become ion implanted layer as whole resistive layer.Now as shown in Fig. 3 (a), the resistive layer 14 of gained only includes outer surface and base material
The surface 12 of 10 flushes and inner surface is positioned at the ion implanted layer 141 within base material 10.Alternatively, it is also possible to only carry out plasma
Body deposition processes, deposits to the surface of base material by conductive material, to form plasma deposited layers as whole resistive layer.
Now as shown in Fig. 3 (b), resistive layer 14 only includes the plasma deposited layers 142 being positioned at above the surface 12 of base material 10.This
Outward, it is also possible to substrate surface is one after the other carried out ion implanting and plasma-deposited both processes.In this case, it is possible to
Carry out plasma-deposited process after first carrying out ion implanting, it is also possible to first carry out plasma-deposited after carry out at ion implanting
Reason.Correspondingly, the resistive layer 14 formed on the surface 12 of base material 10 will include being injected into base material 10 as shown in Fig. 3 (c)
Ion implanted layer below surface 12 141 and deposit to the plasma deposited layers 142 above this ion implanted layer 141, or
As shown in Fig. 3 (d), include the plasma deposited layers 142 deposited to above the surface 12 of base material 10 and be injected into this plasma
The ion implanted layer 141 of the lower face of sedimentary 142.
Formed resistive layer time, it is also possible to ion implanting and/or plasma-deposited before or after, by existing skill
Sputtering method common in art or vapour deposition method and the component of target is deposited on the surface of base material, thus correspondingly in ion implanting
Layer and/or plasma deposited layers be formed underneath or above sputtering depositing layer or vapor deposition layer, as one of resistive layer
Point.For example, it is possible to form sputtering depositing layer (or vapor deposition layer) 143 in the top of the ion implanted layer 141 shown in Fig. 3 (a),
Resistive layer 14 is formed, as shown in Fig. 3 (e) together with this ion implanted layer 141；First can also form sputtering on the surface of base material
Sedimentary (or vapor deposition layer), then the lower face in this sputtering depositing layer (or vapor deposition layer) is injected and is formed ion note
Enter layer (not shown).Can form sputtering depositing layer (or evaporation is heavy in the top of the plasma deposited layers 142 shown in Fig. 3 (b)
Lamination) 143, form resistive layer 14 together with this plasma deposited layers 142, as shown in Fig. 3 (f)；Can also be first at base material
Sputtering depositing layer (or vapor deposition layer) is formed, then at the disposed thereon of this sputtering depositing layer (or vapor deposition layer) on surface
Form plasma deposited layers (not shown).And, using ion implanting, plasma-deposited and sputtering sedimentation (or evaporation
Deposition) these three technique is when processing the surface of base material, and can be according to: ion implanting → plasma-deposited → sputtering is heavy
The order (as shown in Fig. 3 (g)) of long-pending (or vapor deposition)；Ion implanting → sputtering sedimentation (or vapor deposition) → plasma sinks
Long-pending order (as shown in Fig. 3 (h))；The order of plasma-deposited → ion implanting → sputtering sedimentation (or vapor deposition) (as
Shown in Fig. 3 (i))；The order (as shown in Fig. 3 (j)) of plasma-deposited → sputtering sedimentation (or vapor deposition) → ion implanting；
The order (not shown) of sputtering sedimentation (or vapor deposition) → ion implanting → plasma-deposited；Or sputtering sedimentation (or steam
Plated deposition) order (not shown) of → plasma-deposited → ion implanting.Wherein, the outer surface of ion implanted layer is all and base material
Surface or the surface of preformed plasma deposited layers/sputtering depositing layer (or vapor deposition layer) flush, and interior table
Face is then positioned at the inside of the latter.Easy to understand, in ion implanting, plasma-deposited, sputtering sedimentation (or vapor deposition) process
Employed in target can be identical target, it is also possible to be different targets, thus correspondingly finally given
Resistive layer comprises identical or different conductive material components.Although it addition, the resistive layer shown in Fig. 3 (a) to 3 (j)
14 are formed on upper and lower two surfaces of base material 10, but this resistive layer can certainly be formed only at the single table of base material
Face, such as, be formed only on upper surface.
Additionally, define ion implanted layer, plasma deposited layers or sputtering depositing layer (or vapor deposition layer) it
After, it is also possible to form electrodeposited coating by electro-plating method, using the reinforcement as resistive layer, thus improve or adjust this resistance
The electric conductivity of layer.By adjusting various parameters (composition of such as electroplate liquid, electroplating current, temperature, the work in electroplating process
Time etc.), the thickness of electrodeposited coating can be conveniently adjusted, thus control the resistivity etc. of final resistive layer.
Ion implanting can be carried out by the following method: use conductive material is as target, under vacuum conditions, by electricity
Arc effect (for example with vacuum cathode vacuum arc plasma source) makes the conductive material ionization in target produce a large amount of ion, then
This acceleration of ions is made to obtain certain energy under the electric field.The conductive material ion of high energy then directly hits with higher speed
Hit on the surface of base material, and be injected at the certain depth of lower face.At the conductive material ion injected and base material
Material molecule between define relatively stable chemical bond (such as ionic bond or covalent bond), the two together constitute doping knot
Structure.The outer surface of this doped structure (that is, ion implanted layer) flushes with the surface of base material, and its inner surface is then deep into base material
Internal, i.e. to be positioned at the lower face of base material.In ion implantation process, technological temperature is generally room temperature to 1000 DEG C, vacuum
Generally 2 × 10-1To 5 × 10-5Pa.Can be by controlling various parameters (such as voltage, electric current, vacuum, ion implantation dosage
Deng) and easily adjust between the degree of depth and base material and the resistive layer of ion implanting or resistive layer adhesion each other.
Such as, the Implantation Energy of ion can be adjusted to 1-1000keV (such as 5,10,50,100,200,300,400,500,600,
700,800,900keV etc.), implantation dosage can be adjusted to 1.0 × 1012To 1.0 × 1019ion/cm2, inject the degree of depth (that is, from
Distance between inner surface and the substrate surface of sub-implanted layer) can be adjusted to 5-500nm (such as 10,20,50,100,200,
300,400nm etc.), and the adhesion between base material and resistive layer can be adjusted to more than 0.5N/mm (such as 0.7,0.8,
1.0、1.2、1.5N/mm).In a preferred embodiment, accelerating potential being set to 10-100kV, ion implantation dosage is
1.0×1017To 5.0 × 1018ion/cm2So that the lower surface of ion implanted layer is positioned at the degree of depth of below substrate surface 5-50nm
Place.
The plasma-deposited employing mode similar to ion implanting is carried out, and only applies relatively low during depositing
Voltage.Use conductive material i.e., equally is as target, under vacuum conditions, by arcing (for example with vacuum cathode arc
Plasma source) make the conductive material ionization in target produce ion, under accelerating field, then order about this acceleration of ions and
Obtain certain energy and deposit on the surface of base material, thus constituting plasma deposited layers.During this period, can be by adjusting
Joint accelerating potential and make conductive material ion obtain 1-1000eV (such as 5,10,50,100,200,300,400,500,600,
700,800,900eV etc.) energy, and obtain by controlling sedimentation time thickness be 10-1000nm (such as 50,100,
200,300,400,500,600,700,800,900nm etc.) plasma deposited layers.
Fig. 8 schematically shows the ion implanting of the present invention and the operation principle of plasma deposition method.As schemed
Show, for perform ion implanting and/or plasma-deposited equipment mainly by plasma formation region (triggering system) and from
Son bundle forms district's (extraction system) these two parts composition.Plasma formation region includes negative electrode, anode and trigger electrode, ion beam
Form district to be typically made up of one group of porous three electrode.Under the effect of trigger voltage, formed highdensity between negative electrode and anode
Plasma also spreads to draw-out area.Under the acceleration drawing electric field, the charged ion in plasma is brought out and adds
Speed forms ion beam, and kind and the purity of this ion beam are determined by cathode target material.Typically, negative electrode trigger electrode and anode are
Coaxial configuration.Negative electrode is cylindrical and is made up of the conductive material of desired ion.Anode is cylinder barrel shaped and is enclosed within outside negative electrode,
Center drilling is plasma channel.Use high voltage pulse triggering mode, such as trigger electrode is enclosed within outside negative electrode, between use nitrogen
Changing boron insulation, trigger voltage is about 10kV, and triggering pulsewidth is about 10ms.When trigger voltage is applied to negative electrode and trigger electrode
Time upper, spark discharge the plasma produced makes negative electrode connect with anode circuit and form vacuum arc discharge, at cathode surface
Formation only has micron order size but electric current density is up to 106A/cm2Negative electrode speckle, cause cathode target material evaporation and highly ionized
Become plasma.Plasma is with about 104The speed injection of m/s, a part is diffused into extraction electrode by anodes centre hole.
Then, plasma is brought out under the effect drawing electric field, forms ion beam at a high speed.It is applied between yin, yang electrode
Arc voltage is the highest, and arc current is the biggest, and produced plasma density is the highest, it is possible to draw bigger line.
Educt beaming flow size is also relevant with ionogenic running parameter, extraction voltage, deriving structure and cathode material etc..Such as, ion
The extraction voltage that bundle forms district's (extraction system) is the highest, and the ion beam of charged particle is just accelerated to the highest speed, thus can
The position the deepest to be injected into the inside of base material.It addition, vacuum arc discharge also produces a lot of chi while producing plasma
The very little not charged microgranule at 0.1 to 10 micron.The performance of deposited thin film is had significant effect by the existence of these microgranules, causes
Film surface is coarse, and compactness is poor, glossiness and with degradation under the adhesion of base material.Produce to remove or reduce cathode vacuum arc
Raw bulky grain, can use magnetic filter, i.e. sets up the magnetic field of a bending, is filled into uncharged bulky grain, only need to
The current-carrying plasma wanted is directed to the surface of base material along the magnetic field bent.
As described above, the target that ion implanting and plasma deposition process are used can be mutually the same, also
Can be different from each other, and all can use multiple target.Correspondingly, ion implanted layer can include one or more layers,
Plasma deposited layers can also include one or more layers.The inventors discovered that, (injecting if first base material to be carried out ion implanting
Energy is 1-1000KeV), then carry out plasma-deposited (sedimentary energy is 1-1000eV), so formed resistive layer with
Between base material or each resistive layer adhesion each other will be greatly increased, thus it is preferred.Additionally, in step S2
In, can one after the other use first, second ... N target, the surface of base material is formed be arranged in order from inside to outside
One, second ... N resistive layer.Each resistive layer can include that identical or different structure, such as Fig. 3 (a) are to shown in 3 (j)
Any cross-section structure.
During ion implanting, the ion of conductive material is injected into the inside of base material or previous forcibly with the highest speed
The inside of the resistive layer formed, and between base material or resistive layer, form doped structure, be equivalent to the surface at base material or resistive layer
Large number of foundation pile formed below.It is connected with this foundation pile owing to there is foundation pile and follow-up prepared resistive layer, thus finally
Prepare thin film resistor on resistive layer and base material between or resistive layer adhesion each other the highest, far above existing
The adhesion (being 0.5N/mm to the maximum) obtained by magnetron sputtering in technology.In plasma-deposited period, conductive material from
Son flies to base material or the surface of preformed resistive layer, with base material or resistive layer under the effect of accelerating field at a relatively high speed
Between form bigger adhesion (more than 0.5N/mm) so that resistive layer is not easy the surface from base material or previous resistive layer
Come off or peel off.Additionally, be generally of nano level size for ion implanting and plasma-deposited conductive material ion,
More uniform injecting or being distributed during deposition, and little to the incident angle difference of substrate surface.It is accordingly possible to ensure institute
The surface obtaining resistive layer has the good uniformity and compactness, it is not easy to pin-hole phenomena occur, easily prepares quality of forming film good
Good thin film resistor.
After defining resistive layer 14, in addition it is also necessary to form electrode 18 (step S3) in the both sides of this resistive layer 14, such as Fig. 2
Shown in (c), in order to the thin film resistor of gained is welded or otherwise attached in circuit.The formation of electrode can be adopted
Carry out by mode any of in this area, as long as this electrode and resistive layer can be made to turn on.For example, it is possible to use in advance
Mask covers in the mid portion of conductor layer and makes its two ends expose, then use the ion implanting in the present invention and/or etc. from
The side of base material is processed by daughter deposition process, to form ion implanted layer and/or plasma deposited layers as electrode
At least some of.Fig. 4 shows the generalized section of the thin film resistor prepared by this method.As it can be seen, at this
In thin film resistor 100, resistive layer is by the ion implanted layer 141 injected below substrate surface 12 and is positioned at this ion implanted layer
Plasma deposited layers 142 above in the of 141 forms, and electrode 18 is positioned at the both sides of resistive layer, and includes injecting substrate side
Ion implanted layer 141 within 16, it is positioned at the plasma deposited layers 142 above this ion implanted layer 141 and covers such
The sputtering depositing layer (or vapor deposition layer) 143 of plasma deposition layer 142.Certainly, in addition, resistive layer or electrode can be adopted
With any cross-section structure shown in Fig. 3 (a) to 3 (j).
Fig. 5 is the flow chart representing the method manufacturing thin film resistor second embodiment of the invention.The party
Method comprises the following steps: form indentation (step S0) on the surface of base material；Base material is carried out pre-treatment (step S1)；Use target
Material, carries out ion implanting and/or plasma-deposited process to the surface of base material, to form resistive layer on the surface of base material
(step S2)；The base material (step S3) of resistive layer it is formed with along indentation segmentation；And electrode (step is formed in the both sides of resistive layer
Rapid S4).Fig. 6 is the top view illustrating and forming impressed base material.Fig. 7 (a) is to illustrate and each of method shown in Fig. 5 to 7 (d)
Step corresponding product generalized section, pre-treatment step not shown in it, because pre-treatment does not interferes with the section shape of base material
Shape.Compared with the method for above-mentioned first embodiment, the difference of present embodiment is, is additionally included on the surface of base material formation
Indentation and be formed with the base material the two step of resistive layer, such that it is able to disposably formed multiple thin along indentation segmentation
Film resistor.
As shown in Fig. 6 and Fig. 7 (a), on the surface 22 of base material 20, first define some the indentations anyhow intersected
30.Indentation can be formed to use common various mechanical systems or cut mode in this area.Easy to understand, although
Indentation 30 shown in figure is recessed triangular cross section, but the present invention is not limited to this, it is possible to use other shape
Indentation.Additionally, indentation can also be protuberance or the shape of substantially flat, but it is applied in some chemical treatments etc., if energy
Enough easily split base material along this indentation.Then, ion implanting as previously described and/or plasma-deposited is used
The surface of base material is processed by method, to form ion implanted layer and/or plasma deposited layers as resistive layer at least
A part.As shown in Fig. 7 (b), the resistive layer 24 formed on the surface 22 of base material 20 includes being injected into below this surface 22
Ion implanted layer 241 and be positioned at the plasma deposited layers above this ion implanted layer 241.Certainly, Fig. 3 (a) is to institute in 3 (j)
Any resistive layer shown is used equally to present embodiment.Then, as shown in Fig. 7 (c), it is formed with electricity along indentation 30 segmentation
The base material 20 of resistance layer 24, obtains multiple discrete structure.Finally, form electrode 28 in the both sides of resistive layer 24, thus obtain each
Individual independent thin film resistor.Thin film resistor 200 shown in Fig. 7 (d) is similar to the thin film resistor 100 shown in Fig. 4, simply
The wherein shape of the shape of ion implanted layer 241 near the side 26 of base material 20 and plasma deposited layers 242 and indentation 30
There occurs change adaptably.
After final prepared thin film resistor, it is also possible to it is carried out post processing, such as, carry out making annealing treatment to eliminate
The stress that is present in resistive layer also prevents resistive layer from splitting.Further, it is also possible to use various sealant to carry out packaging film resistance
Device, in case it occurs failure phenomenons such as opening a way, resistance value is overproof in a humidity environment.
Above-detailed two kinds of embodiments of membrane according to the invention resistor and manufacture method thereof.Below,
In order to promote the understanding for the present invention, by exemplified some specific embodiments for implementing the present invention.
(embodiment 1)
The present embodiment relates to metal film resistor.
First, selecting thickness is that the glass of 500 μm is as base material.Then, first ion implanting post plasma deposition is used
Processing method, on the surface of glass baseplate formed resistive layer.
In ion implantation process, select Ti, Ta, Cr, Ni, Al, Cu, Ag, Au, V, Zr, Mo, Nb, In, Sn, Tb, Be,
One in Ca, Mg is as target；Preferably, can be selected for Ni or Cr as vacuum cathode arc target.Control the work of ion implanting
Skill temperature is 600 DEG C, is evacuated to 2 × 10-1To 5 × 10-5Pa, and adjust inject ion energy be 50-100keV, note
Entering dosage is 1.0 × 1017To 5.0 × 1017ion/cm2So that the lower surface of ion implanted layer is positioned at lower face 5-of base material
The depth of 50nm.
In plasma deposition process, still select Ti, Ta, Cr, Ni, Al, Cu, Ag, Au, V, Zr, Mo, Nb, In,
One in Sn, Tb, Be, Ca, Mg is as target；Preferably, can be selected for Ni or Cr as vacuum cathode arc target.Control wait from
The energy of daughter is 1-1000eV, obtains the plasma deposited layers that thickness is 10-1000nm, this plasma deposited layers with from
Sub-implanted layer forms resistive layer together.After obtaining resistive layer, then two electrodes are installed in the both sides of this resistive layer, thus
To metal film resistor.
(embodiment 2)
The present embodiment relates to alloy firm resistor.
First, selecting thickness is that the silicon plate of 80 μm is as base material.Then, first ion implanting post plasma deposition is used
Processing method, forms resistive layer on the surface of silicon plate.In ion implanting and plasma deposition process, the alloy used
The composition of target is shown in table 1 below, numeric representation mass percent therein.
Table 1: the composition of alloy target material
| Component | Ni | Cr | Al | Ti | Cu | Be | Ta | Au |
| Alloy combination 1 | 50 | 50 | ||||||
| Alloy combination 2 | 40 | 40 | 20 | |||||
| Alloy combination 3 | 47 | 47 | 6 | |||||
| Alloy combination 4 | 75 | 15 | 10 | |||||
| Alloy combination 5 | 50 | 50 | ||||||
| Alloy combination 6 | 30 | 20 | 15 | 10 | 25 | |||
| Alloy combination 7 | 40 | 40 | 20 | |||||
| Alloy combination 8 | 20 | 15 | 20 | 25 | 20 |
Preferably, in ion implantation process, selecting mass ratio is that the Ni-Cr-Au alloy of 40:40:20 is as vacuum
Cathode arc target, the technological temperature controlling ion implanting is 600 DEG C, is evacuated to 2 × 10-1To 5 × 10-5Pa, and adjust note
The energy entering ion is 50 to 100keV, and implantation dosage is 1.0 × 1017To 5.0 × 1017ion/cm2, so that ion implanting
The lower surface of layer is positioned at the depth of lower face 5-50nm of base material.
In plasma deposition process, selecting mass ratio is that the Ti-Au alloy of 50:50 is as vacuum cathode arc target
Material.The energy controlling plasma is 1 to 1000eV, and obtaining thickness is the plasma-deposited of one of 50nm, 100nm, 200nm
Layer, this plasma deposited layers forms resistive layer together with ion implanted layer.Finally, two electricity are installed in the both sides of this resistive layer
Pole, thus obtain alloy firm resistor.
(embodiment 3)
The present embodiment relates to alloy firm resistor.
First, selecting thickness is that the silicon dioxide of 100 μm is as base material.Then, first ion implanting post plasma is used
The processing method of deposition, forms resistive layer on the surface of silicon dioxide base material.
In ion implantation process, select the Ni-Cr system alloy of different proportion, and mixed with Ta, Al or Mo as vacuum
Cathode arc target.Preferably, the series alloy of the Ni-Cr-alloy selecting mass ratio to be 40:40:20 or 35:55:10 is made
For vacuum cathode arc target, the technological temperature controlling ion implanting is 600 DEG C, is evacuated to 2 × 10-1To 5 × 10-5Pa, and
The energy adjusting injection ion is 50 to 100keV, and implantation dosage is 1.0 × 1017To 5.0 × 1017ion/cm2, so that from
The lower surface of sub-implanted layer is positioned at the lower face 5-50nm depth of base material.
In plasma deposition process, still select the Ni-Cr system alloy of different proportion, and mixed with Ta, Al or Mo
As vacuum cathode arc target；Preferably, select mass ratio be 40:40:20 or 35:55:10 Ni-Cr-alloy be
Row alloy is as vacuum cathode arc target.Control plasma energy be 1-1000eV, obtain thickness be 50nm, 100nm,
The plasma deposited layers of one of 200nm, this plasma deposited layers forms resistive layer together with ion implanted layer.Finally, exist
Two electrodes are installed in the both sides of resistive layer, thus obtain alloy firm resistor.
(embodiment 4)
The present embodiment relates to alloy firm resistor.
First, selecting thickness is that the pottery such as aluminium oxide ceramics of 50 μm is as base material.Then, after using first ion implanting
Plasma-deposited processing method, forms resistive layer on the surface of ceramic base material.
In ion implantation process, selecting mass ratio is that the Ni-Cr alloy of 50:50 or 80:20 is as vacuum cathode arc
Target, the technological temperature controlling ion implanting is 600 DEG C, is evacuated to 2 × 10-1To 5 × 10-5Pa, and adjust injection ion
Energy be 50 to 100keV, implantation dosage is 1.0 × 1017To 5.0 × 1017ion/cm2, so that under ion implanted layer
Surface is positioned at the depth of lower face 5-50nm of base material.
In plasma deposition process, still selecting mass ratio is that the Ni-Cr alloy of 50:50 or 80:20 is as very
Empty cathode arc target.Control plasma energy be 1 to 1000eV, obtain thickness be one of 50nm, 100nm, 200nm etc.
Plasma deposition layer, this plasma deposited layers forms resistive layer together with ion implanted layer.Finally, pacify in the both sides of resistive layer
Fill two electrodes, thus obtain alloy firm resistor.
(embodiment 5)
The present embodiment relates to metal-oxide or metal nitride film resistor.
First, selecting thickness is that the pottery such as alumina-silica Si composite ceramic of 200 μm is as base material.Then, use
The processing method of first ion implanting post plasma deposition, forms resistive layer on the surface of ceramic base material.In ion implanting and
In plasma deposition process, spendable metal-oxide, the composition of metal nitride target are shown in table 2 below, number therein
Value represents mass percent.
Table 2: metal-oxide, the composition of metal nitride target
| Component | Ni | Cr | Be | Al | Ta | Ca | Mg | O | N |
| Target material composition 1 | 40 | 40 | 20 | ||||||
| Target material composition 2 | 45 | 40 | 15 | ||||||
| Target material composition 3 | 50 | 50 | |||||||
| Target material composition 4 | 33 | 67 | |||||||
| Target material composition 5 | 45 | 40 | 8 | 7 | |||||
| Target material composition 6 | 30 | 20 | 15 | 10 | 25 | ||||
| Target material composition 7 | 40 | 40 | 20 | ||||||
| Target material composition 8 | 30 | 30 | 20 | 20 | |||||
| Target material composition 9 | 25 | 50 | 25 | ||||||
| Target material composition 10 | 25 | 25 | 25 | 25 | |||||
| Target material composition 11 | 35 | 25 | 25 | 15 | |||||
| Target material composition 12 | 20 | 50 | 30 | ||||||
| Target material composition 13 | 30 | 30 | 40 |
Preferably, ion implantation process is selected TaN or TaN2As vacuum cathode arc target.Control ion implanting
Technological temperature is 600 DEG C, is evacuated to 2 × 10-1To 5 × 10-5Pa, and adjust inject ion energy be 50 to 100keV,
Implantation dosage is 1.0 × 1017To 5.0 × 1017ion/cm2, so that the lower surface of ion implanted layer is positioned at the surface of base material
The depth of lower section 5-50nm.
In plasma deposition process, still select TaN or TaN2As vacuum cathode arc target.Control plasma
Energy be 1 to 1000eV, obtain the plasma deposited layers that thickness is one of 50nm, 100nm, 200nm, this plasma sink
Lamination forms resistive layer together with ion implanted layer.Finally, two electrodes are installed in the both sides of resistive layer, thus obtain metal nitrogen
Thin film resistor.
(embodiment 6)
The present embodiment relates to metal-silica thin film resistor.
First, selecting thickness is that the PET film of 25 μm is as base material.Then, first ion implanting post plasma deposition is used
Processing method, on the surface of PET film formed resistive layer.
When preparing resistive layer, first use metal/alloy target 1 carry out ion implanting, then re-use silicon dioxide or
Person's metal-silica composite target material 2 carries out plasma-deposited.The composition of the metal/alloy target 1 used be found in
Table 3 below, and the composition of plasma-deposited target 2 is found in table 4 below, numeric representation mass percent therein.
Table 3: the composition of metal/alloy target
| Component | Ni | Cr | Al | Fe | Cu | Be | Ta |
| Alloy combination 1 | 50 | 50 | |||||
| Alloy combination 2 | 80 | 20 | |||||
| Alloy combination 3 | 47 | 47 | 6 | ||||
| Alloy combination 4 | 75 | 15 | 10 | ||||
| Alloy combination 5 | 45 | 40 | 8 | 7 | |||
| Alloy combination 6 | 30 | 20 | 15 | 10 | 25 | ||
| Alloy combination 7 | 40 | 40 | 20 | ||||
| Alloy combination 8 | 20 | 15 | 20 | 25 | 20 |
Table 4: the composition of target 2
| Component | SiO2 | Be | Al | Mg | Ca | Ba | Cr |
| Target material composition 1 | 100 | ||||||
| Target material composition 2 | 60 | 40 | |||||
| Target material composition 3 | 70 | 30 | |||||
| Target material composition 4 | 75 | 25 | |||||
| Target material composition 5 | 80 | 10 | 10 | ||||
| Target material composition 6 | 85 | 15 | |||||
| Target material composition 7 | 90 | 5 | 5 | ||||
| Target material composition 8 | 95 | 3 | 2 |
Preferably, in ion implantation process, select the aluminium alloy of different Al content as target, apply mentioned above
Technological parameter, the lower face at PET film forms ion implanted layer.Then, in plasma deposition process, select with SiO2
Oxide target material as main component；Preferably can be selected for pure SiO2Target or mass ratio are the SiO of 60:402-Al is multiple
Close target as vacuum cathode arc target.Control plasma energy be 1 to 1000eV, obtain thickness be 50nm, 100nm,
The plasma deposited layers of one of 200nm, this plasma deposited layers forms resistive layer together with ion implanted layer.Finally, exist
Two electrodes are installed in the both sides of resistive layer, thus obtain metal-silica thin film resistor.
Alternatively, in such scheme, equally select the Al-SiO of various different content2Composite is as ion
The target injected, is the Al-SiO of 40:60 for example with mass ratio2Composite target material, the technological temperature controlling ion implanting is
600 DEG C, it is evacuated to 2 × 10-1To 5 × 10-5Pa, and adjust inject ion energy be 50 to 100keV, implantation dosage is
1.0×1017To 5.0 × 1017ion/cm2So that the lower surface of ion implanted layer is positioned at the deep of lower face 5-50nm of base material
At degree.
(embodiment 7)
The present embodiment relates to metal silicide film resistor.
First, selecting thickness is that the silicon plate of 200 μm is as base material.Then, first ion implanting post plasma deposition is used
Processing method, on the surface of silicon plate formed resistive layer.
In ion implantation process, select TiSi2Or TaSi2As vacuum cathode arc target.The technique controlling ion implanting
Temperature is 600 DEG C, is evacuated to 2 × 10-1To 5 × 10-5Pa, and adjust inject ion energy be 100 to 500keV, note
Entering dosage is 2.0 × 1017To 1.0 × 1018ion/cm2, so that the lower surface of ion implanted layer is positioned under the surface of base material
The depth of side 10-100nm, this ion implanted layer is by Si and TiSi2(or TaSi2) doped structure that forms.
Then, in plasma deposition process, TiSi is still selected2Or TaSi2As target.Control plasma
Energy is 100 to 1000eV, obtains the plasma deposited layers that thickness is one of 100nm, 200nm, 500nm, this plasma
Sedimentary forms resistive layer together with ion implanted layer.Finally, two electrodes are installed in the both sides of resistive layer, thus obtain metal
Silicide film resistor.
Above-described content is only referred to presently preferred embodiments of the present invention.But, the present invention is not limited in literary composition
Described specific embodiment.Those skilled in the art will readily occur to, in the range of without departing from idea of the invention, and can be right
These embodiments carry out various obvious amendment, adjust and replace, with make it suitable for specific situation.It practice, this
Invention protection domain be defined by the claims, and those skilled in the art can be included it is envisioned that other example.
If other example such has the structural element of the literal language zero difference with claim, if or they include with
The literal language of claim has the equivalent structural elements of non-limiting difference, then they will fall in the protection of claim
In the range of.
Claims (23)
1. the method manufacturing thin film resistor, comprises the following steps:
S1: base material is carried out pre-treatment；
S2: use target, the surface of described base material is carried out ion implanting and/or plasma-deposited process, with at described base
Resistive layer is formed on the surface of material；And
S3: form electrode in the both sides of described resistive layer.
Method the most according to claim 1, it is characterised in that in step s 2, the surface of described base material is first carried out from
Son carries out plasma-deposited process after injecting.
Method the most according to claim 1, it is characterised in that in step s 2, one after the other uses first, second ...
N target, forms first, second ... the N resistive layer being arranged in order from inside to outside on the surface of described base material.
Method the most according to claim 1, it is characterised in that described method also includes:
Before step S2, the surface of described base material forms indentation；With
Upon step s 2, before S3, it is formed with the described base material of resistive layer along the segmentation of described indentation, in order to obtain multiple thin
Film resistor.
Method the most according to claim 1, it is characterised in that step S1 includes described base material is carried out processed, electricity
One or more in dizzy process, gas ion injection process, Cement Composite Treated by Plasma, surface coarsening process.
Method the most according to claim 1, it is characterised in that step S2 be additionally included in carry out described ion implanting and/or
After plasma-deposited, by sputtering or evaporation, the component of another target is deposited on the surface of described base material.
Method the most according to claim 1, it is characterised in that step S3 includes: use target, the both sides to described base material
Face carries out ion implanting and/or plasma-deposited process, to form at least some of of described electrode.
Method the most according to claim 1 and 2, it is characterised in that during ion implanting, the ion of described target obtains
The energy of 1-1000keV, is injected into the degree of depth of lower face 5-500nm of described base material and constitutes ion implanted layer.
Method the most according to claim 1 and 2, it is characterised in that in plasma-deposited period, the ion of described target
Obtain the energy of 1-1000eV, be deposited to the surface of described base material and constitute the plasma that thickness is 10-1000nm
Sedimentary.
Method the most according to any one of claim 1 to 7, it is characterised in that described base material includes ceramic base material, silicon
One or more in base material, glass baseplate and organic polymer base material.
11. methods according to any one of claim 1 to 7, it is characterised in that described target includes metal targets, oxygen
One or more in compound target, nitride target, metal suicide target.
12. methods according to claim 11, it is characterised in that described metal targets include Ti, Ta, Cr, Ni, Al, Cu,
One or more in Ag, Au, V, Zr, Mo, Nb, In, Sn, Tb, Be, Ca, Mg and the alloy between them.
13. methods according to claim 11, it is characterised in that described oxide target material include Ni, Cr, Al, Ta, Ca or
The oxide of Mg or the combination of these oxides.
14. methods according to claim 11, it is characterised in that described nitride target includes Ni, Cr, Be, Al or Ta
Nitride or the combination of these nitride.
15. 1 kinds of thin film resistors, including:
Base material；
The resistive layer formed on the surface of described base material, described resistive layer includes ion implanted layer and/or plasma-deposited
Layer；And
The electrode formed in the both sides of described resistive layer.
16. thin film resistors according to claim 15, it is characterised in that described ion implanted layer be by injection material and
The doped structure of described base material composition, its outer surface flushes with the surface of described base material, and inner surface is positioned at described base material
The degree of depth of lower face 5-500nm.
17. thin film resistors according to claim 15, it is characterised in that described plasma deposited layers is located immediately at institute
State the surface of base material, or be positioned at the top of described ion implanted layer.
18. thin film resistors according to claim 15, it is characterised in that described resistive layer includes arranging the most successively
First, second ... the N resistive layer of row.
19. thin film resistors according to claim 15, it is characterised in that described electrode is included in the both sides of described base material
The ion implanted layer of face formation and/or plasma deposited layers.
20. according to the thin film resistor described in any one in claim 15 to 19, it is characterised in that described base material includes pottery
One or more in porcelain base material, silicon substrate, glass baseplate and organic polymer base material.
21. according to the thin film resistor according to any one of claim 15 to 19, it is characterised in that form described resistive layer
Material includes one or more in metal, oxide, nitride, metal silicide.
22. thin film resistors according to claim 21, it is characterised in that described oxide includes Ni, Cr, Al, Ta, Ca
Or the oxide of Mg or the combination of these oxides.
23. thin film resistors according to claim 21, it is characterised in that described nitride include Ni, Cr, Be, Al or
The nitride of Ta or the combination of these nitride.
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| CN109637766A (en) * | 2018-12-21 | 2019-04-16 | 广州天极电子科技有限公司 | A kind of method of adjustment of tantalum nitride membrane resistor resistance value |
| WO2023035955A1 (en) * | 2021-09-07 | 2023-03-16 | 惠州市拓普金属材料有限公司 | Silver alloy target material, and preparation method therefor and application thereof |
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| US20220301747A1 (en) * | 2021-03-19 | 2022-09-22 | Holy Stone Enterprise Co., Ltd. | High-Power Resistor |
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| WO2023035955A1 (en) * | 2021-09-07 | 2023-03-16 | 惠州市拓普金属材料有限公司 | Silver alloy target material, and preparation method therefor and application thereof |
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