CN110484877A - A kind of preparation method of ceramic base copper-clad plate - Google Patents
A kind of preparation method of ceramic base copper-clad plate Download PDFInfo
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- CN110484877A CN110484877A CN201910953983.3A CN201910953983A CN110484877A CN 110484877 A CN110484877 A CN 110484877A CN 201910953983 A CN201910953983 A CN 201910953983A CN 110484877 A CN110484877 A CN 110484877A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses a kind of preparation methods of ceramic base copper-clad plate, it is related to copper-clad plate manufacturing field, include the following steps and sputters one layer of reactive metal layer in ceramic substrate surface, one layer of solder layer is covered in the reactive metal layer, one layer of copper foil layer is sputtered in the solder layer surface, one layer of thickening copper foil layer is sputtered in the copper foil layer surface, obtain ceramic base copper-clad plate sample, the ceramic base copper-clad plate sample is put into vacuum drying oven and fires welding fabrication, ceramic base copper-clad plate finished product is made, the present invention by sputtering a reactive metal layer in ceramic substrate surface in advance, reactive metal layer can activate potsherd surface, ensure that potsherd has stronger activity, convenient for the welding again with solder, so that the adhesive force of ceramic substrate and copper foil is promoted, so that the combination of obtained copper foil and ceramic substrate is more solid and reliable.
Description
Technical field
The present invention relates to copper-clad plate manufacturing fields, and in particular to a kind of preparation method of ceramic base copper-clad plate.
Background technique
Ceramic base copper-clad plate had both had high thermal conductivity coefficient, high heat resistance, high electrical insulating properties, high mechanical strength and the silicon of ceramics
The features such as thermal expansion coefficient similar in chip and low dielectric loss, and high conductivity and excellent weldability with oxygen-free copper
Can, it is current field of power electronics power module package, the critical material for connecting chip and heat radiation substrate, is widely used in all kinds of
Electrical equipment and electronic product.In the prior art, vacuum splashing and plating technique is mostly used to metallize ceramics.In vacuum splashing and plating mistake
Cheng Zhong sputters a layers of copper after first sputtering one layer of titanium layer, however in practical applications, since titanium has the spy for being easy passivation
Property, the copper plate after sputtering in this way can be not fine and close enough, causes the adhesive force between copper foil and potsherd poor.Therefore, existing
Technology has yet to be improved and developed.
Summary of the invention
According to the above-mentioned deficiencies of the prior art, the technical problem to be solved by the present invention is to propose a kind of ceramic base copper-clad plate
Preparation method, by sputtering a reactive metal layer in advance in ceramic substrate surface, reactive metal layer can activate potsherd surface,
Ensure that potsherd has stronger activity, convenient for the welding again with solder, so that the adhesive force of ceramic substrate and copper foil is promoted,
So that the combination of obtained copper foil and ceramic substrate is more solid and reliable.
A kind of preparation method of ceramic base copper-clad plate, comprising the following steps:
One layer of reactive metal layer is sputtered in ceramic substrate surface；
One layer of solder layer is covered in the reactive metal layer；
One layer of copper foil layer is sputtered in the solder layer surface；
One layer of thickening copper foil layer is sputtered in the copper foil layer surface, obtains ceramic base copper-clad plate sample；
The ceramic base copper-clad plate sample is put into vacuum drying oven and fires welding fabrication, ceramic base copper-clad plate finished product is made.
Optionally, before ceramic substrate surface sputters one layer of reactive metal layer, further includes:
Chemical treatment and physical treatment successively are carried out to ceramic substrate.
Optionally, the chemical treatment includes carrying out degreasing degreasing to ceramic substrate, then cleaning, drying, removes ceramic base
The impurity and spot on piece surface, the physical treatment include polishing ceramic substrate plasma treatment, surface wire drawing and surface.
Optionally, the mode of the sputtering is by the way of vacuum plating.
Optionally, vacuum degree is less than 0.5Pa, acceleration voltage 5-500V when the vacuum plating, and technological temperature is room temperature-
200℃。
Optionally, the ceramic substrate is aluminium oxide ceramics, aluminium nitride ceramics, beryllium oxide ceramics, silicon nitride ceramics, glass
Ceramics or sapphire ceramic.
Optionally, the solder layer is one of silver-based, Ni-based or cobalt-based or a variety of.
Optionally, the thickening copper foil layer uses acidiccopper plating, pyrophosphate copper plating or electroless copper.
Optionally, the firing welding condition of the ceramic base copper-clad plate sample in a vacuum furnace is set as 5-50mpa, 100-
900 DEG C, 10-200 minutes.
The present invention has the advantages that successively designing active metal layer, solder layer, copper foil layer and thickening on a ceramic substrate
Copper foil layer, by sputtering a reactive metal layer in advance in ceramic substrate surface, reactive metal layer can activate potsherd surface, it is ensured that
Potsherd has stronger activity, convenient for the welding again with solder, reactive metal layer meeting and potsherd during firing
In oxide occur chemical reaction be cross-linked with each other, while in solder other metal materials formed eutectic, further mention
The adhesion strength between copper foil and ceramic substrate is risen, so that the adhesive force of ceramic substrate and copper foil is promoted, so that obtained copper
The combination of foil and ceramic substrate is more solid and reliable, and the hydrofluoric acid of pollution environment is especially not used, is conducive to green production.
Detailed description of the invention
Fig. 1 is the flow diagram figure of the specific embodiment of the invention；
Fig. 2 is the structural schematic diagram of the specific embodiment of the invention.
Wherein, 1- ceramic substrate, 2- reactive metal layer, 3- solder layer, 4- copper foil layer, 5- thicken copper foil layer
Specific embodiment
To be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, below with reference to
Specific embodiment, the present invention is further explained.
As one embodiment, the present invention proposes a kind of preparation method of ceramic base copper-clad plate, comprising the following steps:
One layer of reactive metal layer is sputtered in ceramic substrate surface；
One layer of solder layer is covered in the reactive metal layer；
One layer of copper foil layer is sputtered in the solder layer surface；
One layer of thickening copper foil layer is sputtered in the copper foil layer surface, obtains ceramic base copper-clad plate sample；
The ceramic base copper-clad plate sample is put into vacuum drying oven and fires welding fabrication, ceramic base copper-clad plate finished product is made.
By the design of the preparation method of the ceramic base copper-clad plate, successively design on a ceramic substrate active metal layer,
Solder layer, copper foil layer and thickening copper foil layer, by sputtering a reactive metal layer in advance in ceramic substrate surface, reactive metal layer can
Activate potsherd surface, it is ensured that potsherd has stronger activity, and convenient for the welding again with solder, reactive metal layer is being fired
During chemical reaction can occur with the oxide in potsherd and be cross-linked with each other, while being formed with other metal materials in solder
Eutectic further improves the adhesion strength between copper foil and ceramic substrate, so that the adhesive force of ceramic substrate and copper foil
It is promoted, so that the combination of obtained copper foil and ceramic substrate is more solid and reliable, the hydrofluoric acid of pollution environment is especially not used,
Be conducive to green production.
Relatively good implementation of the present invention is described in detail below.
Please refer to Fig. 1 and Fig. 2, the preparation method of the ceramic base copper-clad plate the following steps are included:
S1 chemical treatment and physical treatment successively) are carried out to ceramic substrate 1, chemical treatment includes carrying out degreasing to ceramic substrate 1
Oil removing, then cleaning, drying, removes the impurity and spot on 1 surface of ceramic substrate, and subsequent sputtering and welding process are convenient in removal
Preferable effect is presented, physical treatment includes polishing 1 plasma treatment of ceramic substrate, surface wire drawing and surface.
S2) one layer of reactive metal layer 2 is sputtered on 1 surface of ceramic substrate.
S3 one layer of solder layer 3) is covered in reactive metal layer 2.
S4) one layer of copper foil layer 4 is sputtered on 3 surface of solder layer.
S5 one layer of thickening copper foil layer 5) is sputtered on 4 surface of copper foil layer, obtains ceramic base copper-clad plate sample.
In the present embodiment, the method for vacuum plating sputtering sputters one layer of reactive metal layer 2 on 1 surface of ceramic substrate in advance,
Reactive metal layer 2 can activate potsherd surface 1, it is ensured that ceramic substrate 1 has stronger activity, and the material of reactive metal layer is
One of Ni, Ti, Zn, Zr, Cu, Al, Au or a variety of, but not limited to this, then again successively vacuum plating sputtering solder layer 3,
Copper foil layer 4 and thickening copper foil layer 5.Vacuum degree is less than 0.5Pa, acceleration voltage 5-500V when vacuum plating, and technological temperature is room temperature-
200℃。
Led to using active metal sputtering second metallization technique instead of traditional active metal brazing method in the present embodiment
It crosses and sputters a reactive metal layer 2 in advance on 1 surface of ceramic substrate, reactive metal layer 2 can activate potsherd surface, it is ensured that ceramic base
Piece 1 has stronger activity, convenient for the welding again with solder layer 3, while as the excessive layer between solder and ceramic substrate,
Reactive metal layer 2 during firing can in ceramic substrate 1 oxide occur chemical reaction be cross-linked with each other, while with weldering
Other metal materials form eutectic in material, further improve the adhesion strength between subsequent copper foil and ceramic substrate 1,
So that the adhesive force of ceramic substrate 1 and copper foil is promoted.
Since 1 surface of ceramic substrate is metallized, activity is stronger, so as to lower the thickness of required solder embrittlement phase
Degree, improves the cold-resistant times of thermal cycle of product.
The enhancing of 1 surface-active of ceramic substrate is so that wetting ability of the solder on potsherd surface is obviously reinforced, this is effectively
Ground reduces the porosity of solder layer, to improve the adhesive force of copper foil Yu ceramic substrate 1.
The material of solder layer is one of silver-based, Ni-based or cobalt-based or a variety of, and cost of manufacture is effectively reduced.
S6) ceramic base copper-clad plate sample is put into vacuum drying oven and fires welding fabrication, ceramic base copper-clad plate finished product is made.
In the present embodiment, ceramic substrate 1 be aluminium oxide ceramics, aluminium nitride ceramics, beryllium oxide ceramics, silicon nitride ceramics,
Glass ceramics or sapphire ceramic.Solder layer 3 is one of silver-based, Ni-based or cobalt-based or a variety of.It thickeies copper foil layer 5 and uses sulphur
Hydrochlorate copper facing, pyrophosphate copper plating or electroless copper.
The firing welding condition of ceramic base copper-clad plate sample in a vacuum furnace is set as 5-50mpa, and 100-900 DEG C, 10-
200 minutes.
To sum up, the present invention has the advantages that successively designing active metal layer, solder layer, copper foil layer on a ceramic substrate
With thickening copper foil layer, by sputtering a reactive metal layer in advance in ceramic substrate surface, reactive metal layer can activate potsherd table
Face, it is ensured that potsherd has stronger activity, and convenient for the welding again with solder, reactive metal layer can be with during firing
Oxide in potsherd occurs chemical reaction and is cross-linked with each other, while forming eutectic with other metal materials in solder, into one
The adhesion strength of step improved between copper foil and ceramic substrate, so that the adhesive force of ceramic substrate and copper foil is promoted, so that
The combination of the copper foil and ceramic substrate that arrive is more solid and reliable, and the hydrofluoric acid of pollution environment is especially not used, is conducive to green
Production.
As known by the technical knowledge, the present invention can pass through the embodiment party of other essence without departing from its spirit or essential feature
Case is realized.Therefore, embodiment disclosed above, in all respects are merely illustrative, not the only.Institute
Have within the scope of the present invention or is included in the invention in the change being equal in the scope of the present invention.
Claims (9)
1. a kind of preparation method of ceramic base copper-clad plate, it is characterised in that: the following steps are included:
One layer of reactive metal layer is sputtered in ceramic substrate surface；
One layer of solder layer is covered in the reactive metal layer；
One layer of copper foil layer is sputtered in the solder layer surface；
One layer of thickening copper foil layer is sputtered in the copper foil layer surface, obtains ceramic base copper-clad plate sample；
The ceramic base copper-clad plate sample is put into vacuum drying oven and fires welding fabrication, ceramic base copper-clad plate finished product is made.
2. a kind of preparation method of ceramic base copper-clad plate according to claim 1, it is characterised in that: in ceramic substrate surface
Before sputtering one layer of reactive metal layer, further includes:
Chemical treatment and physical treatment successively are carried out to ceramic substrate.
3. a kind of preparation method of ceramic base copper-clad plate according to claim 2, it is characterised in that: the chemical treatment packet
It includes and degreasing degreasing is carried out to ceramic substrate, then cleaning, drying removes the impurity and spot of ceramic substrate surface, at the physics
Reason includes polishing ceramic substrate plasma treatment, surface wire drawing and surface.
4. a kind of preparation method of ceramic base copper-clad plate according to claim 1, it is characterised in that: the mode of the sputtering
For by the way of vacuum plating.
5. a kind of preparation method of ceramic base copper-clad plate according to claim 4, it is characterised in that: when the vacuum plating
Vacuum degree is less than 0.5Pa, acceleration voltage 5-500V, and technological temperature is -200 DEG C of room temperature.
6. a kind of preparation method of ceramic base copper-clad plate according to claim 1, it is characterised in that: the ceramic substrate is
Aluminium oxide ceramics, aluminium nitride ceramics, beryllium oxide ceramics, silicon nitride ceramics, glass ceramics or sapphire ceramic.
7. a kind of preparation method of ceramic base copper-clad plate according to claim 1, it is characterised in that: the solder layer is silver
One of base, Ni-based or cobalt-based are a variety of.
8. a kind of preparation method of ceramic base copper-clad plate according to claim 1, it is characterised in that: the thickening copper foil layer
Using acidiccopper plating, pyrophosphate copper plating or electroless copper.
9. a kind of preparation method of ceramic base copper-clad plate according to claim 1, it is characterised in that: the ceramic base covers copper
The firing welding condition of plate sample in a vacuum furnace is set as 5-50mpa, and 100-900 DEG C, 10-200 minutes.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113645765A (en) * | 2021-09-09 | 2021-11-12 | 江苏耀鸿电子有限公司 | Copper-clad substrate for high-end printed circuit board and preparation method thereof |
| CN114000112A (en) * | 2021-10-21 | 2022-02-01 | 苏州玖凌光宇科技有限公司 | Aluminum nitride copper-clad AMB method |
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| EP1056320A2 (en) * | 1999-05-25 | 2000-11-29 | Mitsui Mining and Smelting Co., Ltd | Copper foil for printed wiring board |
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| CN106888551A (en) * | 2017-04-17 | 2017-06-23 | 深圳市环基实业有限公司 | A kind of ceramic base copper-clad plate and its preparation technology |
| CN107032817A (en) * | 2017-05-27 | 2017-08-11 | 烟台柳鑫新材料科技有限公司 | A kind of new ceramics base copper-clad plate and preparation method thereof |
| CN109608221A (en) * | 2018-11-30 | 2019-04-12 | 合肥市闵葵电力工程有限公司 | A kind of preparation method of aluminium nitride ceramic copper-clad substrate |
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| FR2554389A1 (en) * | 1983-11-07 | 1985-05-10 | Gen Electric | METAL-COATED LAMINATE AND METHOD OF MANUFACTURE |
| EP1056320A2 (en) * | 1999-05-25 | 2000-11-29 | Mitsui Mining and Smelting Co., Ltd | Copper foil for printed wiring board |
| CN102795875A (en) * | 2012-07-11 | 2012-11-28 | 铜陵颐和泰新材料股份有限公司 | Preparation method of ceramic-aluminum-base copper clad plate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113645765A (en) * | 2021-09-09 | 2021-11-12 | 江苏耀鸿电子有限公司 | Copper-clad substrate for high-end printed circuit board and preparation method thereof |
| CN113645765B (en) * | 2021-09-09 | 2022-08-23 | 江苏耀鸿电子有限公司 | Copper-clad substrate for high-end printed circuit board and preparation method thereof |
| CN114000112A (en) * | 2021-10-21 | 2022-02-01 | 苏州玖凌光宇科技有限公司 | Aluminum nitride copper-clad AMB method |
| CN114000112B (en) * | 2021-10-21 | 2024-03-22 | 苏州玖凌光宇科技有限公司 | Aluminum nitride copper-clad AMB method |
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