JPH039329Y2 - - Google Patents
Info
- Publication number
- JPH039329Y2 JPH039329Y2 JP1158486U JP1158486U JPH039329Y2 JP H039329 Y2 JPH039329 Y2 JP H039329Y2 JP 1158486 U JP1158486 U JP 1158486U JP 1158486 U JP1158486 U JP 1158486U JP H039329 Y2 JPH039329 Y2 JP H039329Y2
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- gland
- sleeve
- gas
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 26
- 210000004907 gland Anatomy 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 7
- 239000010409 thin film Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案は半導体基板（ウエハ）上に薄膜を生成
させるに用いられる減圧CVD装置のガス導入部
の改良に関するものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to an improvement in the gas introduction section of a low-pressure CVD apparatus used for forming a thin film on a semiconductor substrate (wafer).
（従来の技術）
従来の減圧CVD装置において、ウエハに種々
な材料の薄膜を生成させるために反応管内部へガ
スを導入するノズルには、加工に便利な金属製の
ものが使用されているが、例えばシリコン窒化膜
の生成の場合には反応管内は約800℃の高温にな
るためノズルは酸化を起こし、この金属酸化物が
ウエハ上に付着して薄膜の性能に悪影響を与えて
いる。またこの欠点を除くためノズルの材質を透
明石英ガラス製にすることも考えられたが、継手
などに問題があつてまだ実用されていない。また
透明石英ガラスのノズルは破損し易く、これでは
危険なガスが大気中に放出されるおそれがあり、
危険であることは明白である。（なお第２図によ
つて後に説明する）
（考案の具体的な目的）
本考案は前記のように薄膜成長に好ましくない
金属製ノズルを透明石英ガラス製のものに置換え
ながら、安全な継手装置を設けることによつて膜
質の向上とCVD装置の安全性の確保を得ること
を目的とするものである。(Prior art) In conventional low-pressure CVD equipment, metal nozzles are used to introduce gas into the reaction tube to form thin films of various materials on wafers, which is convenient for processing. For example, in the case of forming a silicon nitride film, the inside of the reaction tube reaches a high temperature of about 800°C, which causes oxidation of the nozzle, and this metal oxide adheres to the wafer, adversely affecting the performance of the thin film. In order to eliminate this drawback, it has been considered to use transparent quartz glass as the material for the nozzle, but this has not been put to practical use yet due to problems with the joints. Additionally, clear quartz glass nozzles are easily damaged, which can release dangerous gases into the atmosphere.
It is clear that it is dangerous. (This will be explained later with reference to Fig. 2) (Specific purpose of the invention) The present invention replaces the metal nozzle, which is unfavorable for thin film growth, with a transparent quartz glass nozzle as described above, and provides a safe joint device. The purpose of this is to improve the film quality and ensure the safety of the CVD equipment by providing this.
（考案の構成と作用）
第３図は従来の減圧CVD装置の一例の構成概
要を示す断面図で、本考案に関係のある部分を説
明すると１はノズル、１４と１５は内側と外側の
反応管、１２はウエハ、１３はウエハホルダ、１
１はウエハ搭載用石英ボート、１６はヒータコイ
ル、１０はウエハボート出し入れ用ドア、１７は
排気口、９はオーリング、１８と１９はガス流入
口であるが、１８は薄膜材料のガス（例えば
SiH4）入口、１９は１８のガスと直接反応しな
いように別の入口より導入するガス（例えばO2
など）入口である。この図にはノズル１はSiH4
ガスがO2ガスと直接反応するのを避けるため、
高温部まで導入されていることが示されている。(Structure and operation of the invention) Fig. 3 is a cross-sectional view showing the outline of the structure of an example of a conventional low-pressure CVD device.The parts related to the invention are as follows: 1 is a nozzle, and 14 and 15 are inner and outer reactions. tube, 12 is a wafer, 13 is a wafer holder, 1
1 is a quartz boat for mounting wafers, 16 is a heater coil, 10 is a door for loading and unloading the wafer boat, 17 is an exhaust port, 9 is an O-ring, 18 and 19 are gas inlets, and 18 is a gas inlet of a thin film material (for example,
SiH 4 ) inlet, 19 is a gas introduced from another inlet so as not to directly react with the gas in 18 (for example, O 2
etc.) is the entrance. In this figure, nozzle 1 is SiH 4
To avoid the gas directly reacting with O2 gas,
It is shown that it is introduced to high temperature parts.
第１図は本考案によるガス導入部の構造例断面
図で、１はノズル、９はオーリング、１０はド
ア、１５は反応管であるがその他は順に説明す
る。反応管内（図の１５より左側）は減圧雰囲気
にあり、石英ノズル１はその高温部まで導入され
る。反応管１５とドア１０の間のガス導入部７は
金属円筒で、この部分にノズルを挿入する穴を設
けてあるが、ノズルとガス導入部との間のシール
部には、すべて円筒形または円筒状中空を有する
金属製のグランド（gland）５、ナツト４、スリ
ーブ３が使用され、グランド５はその一端がガス
導入部７に溶接されている。ノズル１のシールは
ナツト４とグランド５それぞれの内面と外面に設
けてあるねじ８によるはめ合いによりスリーブ３
を介してオーリング２を押しつぶし、ノズル外面
とグランド５に押しつけることによつて行う。な
おノズルの先端はスリーブを介して外気（大気）
につらなるが、直接ノズルが大気に触れることは
ない。スリーブ３の外径は５〜10mmで、外部ガス
６の導入はスリーブ３にガス供給用管などを接続
して行う。 FIG. 1 is a cross-sectional view of a structural example of a gas introduction section according to the present invention, in which 1 is a nozzle, 9 is an O-ring, 10 is a door, and 15 is a reaction tube, and the others will be explained in order. The inside of the reaction tube (to the left of 15 in the figure) is in a reduced pressure atmosphere, and the quartz nozzle 1 is introduced to the high temperature part. The gas introduction part 7 between the reaction tube 15 and the door 10 is a metal cylinder, and a hole is provided in this part for inserting a nozzle, but the sealing part between the nozzle and the gas introduction part is all cylindrical or A metal gland 5 having a hollow cylindrical shape, a nut 4 and a sleeve 3 are used, and one end of the gland 5 is welded to the gas inlet 7. The seal of the nozzle 1 is secured to the sleeve 3 by fitting with screws 8 provided on the inner and outer surfaces of the nut 4 and gland 5, respectively.
This is done by crushing the O-ring 2 through the nozzle and pressing it against the outer surface of the nozzle and the gland 5. The tip of the nozzle is connected to outside air (atmosphere) through the sleeve.
However, the nozzle does not come into direct contact with the atmosphere. The outer diameter of the sleeve 3 is 5 to 10 mm, and the external gas 6 is introduced by connecting a gas supply pipe or the like to the sleeve 3.
スリーブ３は金属製であるから、少しの取扱い
ミスで破損することはない。 Since the sleeve 3 is made of metal, it will not be damaged by a slight handling error.
第２図は市販の継手を使用した場合のガス導入
部の一例の断面図で、石英ノズルが大気中に露出
しており、透明石英ガラス製であるため少しの取
扱いミスでも破損のおそれがあり、破損による危
険は大きい。 Figure 2 is a cross-sectional view of an example of the gas introduction part when a commercially available joint is used.The quartz nozzle is exposed to the atmosphere, and since it is made of transparent quartz glass, there is a risk of damage even with the slightest handling error. , the risk of damage is high.
（考案の効果）
本考案の実施によつてノズル透明石英ガラス製
のものを使用しても安全にガス導入部（チユー
ブ、ホース等）を接続することができること、お
よびノズルに透明石英ガラスを使用するため成長
膜質の向上が得られるという効果が期待できる。(Effects of the invention) By implementing the invention, it is possible to safely connect the gas introduction part (tube, hose, etc.) even if the nozzle is made of transparent quartz glass, and the nozzle is made of transparent quartz glass. Therefore, the effect of improving the quality of the grown film can be expected.
第１図は本考案によるCVD装置のガス導入部
の構造例断面図、第２図は市販の継手を使用した
場合のガス導入部の構造例断面図、第３図は従来
の減圧CVD装置の構成例断面図である。
１……ノズル、２，９……オーリング、３……
スリーブ、４……ナツト、５……グランド（ぱつ
きんおさえ）、６……導入ガス、７……ガス導入
部、８……ねじ部分、１０……ドア。
Fig. 1 is a cross-sectional view of a structural example of the gas introduction part of the CVD apparatus according to the present invention, Fig. 2 is a cross-sectional view of a structural example of the gas introduction part when a commercially available joint is used, and Fig. 3 is a cross-sectional view of a structural example of the gas introduction part of a conventional low-pressure CVD apparatus. It is a sectional view of a configuration example. 1... Nozzle, 2, 9... O-ring, 3...
Sleeve, 4...Nut, 5...Gland (patkin support), 6...Introduction gas, 7...Gas introduction part, 8...Threaded part, 10...Door.
Claims (1)
金属のガス導入部から反応管内に達するように設
けられ、反応管内に反応ガスを導入するノズルを
透明石英ガラス製とし、このノズルと装置外部の
ガス供給管などとの接続を前記ガス導入部に一端
を溶接され、金属製で内部に前記ノズルを貫挿さ
せ外面にねじ切つたグランド、前記グランドを貫
通したノズルの先端にはめ合う内径をもつスリー
ブ、および前記グランドとスリーブの接合部分の
外側でグランドのねじにはめ合わせ、グランドと
スリーブに挾まれたオーリングを締めつけること
によつてノズル、グランド、スリーブ間の気密を
保持させるナツトによつて構成したことを特徴と
する減圧CVD装置ガス導入部。 The nozzle that introduces the reaction gas into the reaction tube, which is installed in the reaction tube of the reduced-pressure CVD apparatus so as to reach the inside of the reaction tube from the metal gas introduction part that is airtightly connected, is made of transparent quartz glass. A gland that is made of metal and has one end welded to the gas introduction part for connection with a gas supply pipe, etc., and has a threaded outer surface with the nozzle inserted therein, and a sleeve that has an inner diameter that fits into the tip of the nozzle that passes through the gland. , and a nut that is fitted onto the screw of the gland on the outside of the joint between the gland and the sleeve, and maintains airtightness between the nozzle, the gland, and the sleeve by tightening the O-ring held between the gland and the sleeve. A gas inlet part of a reduced pressure CVD device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1158486U JPH039329Y2 (en) | 1986-01-31 | 1986-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1158486U JPH039329Y2 (en) | 1986-01-31 | 1986-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62126833U JPS62126833U (en) | 1987-08-12 |
| JPH039329Y2 true JPH039329Y2 (en) | 1991-03-08 |
Family
ID=30798932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1158486U Expired JPH039329Y2 (en) | 1986-01-31 | 1986-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH039329Y2 (en) |
-
1986
- 1986-01-31 JP JP1158486U patent/JPH039329Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62126833U (en) | 1987-08-12 |
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