JP3453834B2 - Wafer chuck device and semiconductor manufacturing device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer chuck device for holding a wafer constituting a base of a semiconductor device and a semiconductor device for forming a thin film on the surface of a wafer by a thermochemical reaction with a reaction gas.

[0002]

2. Description of the Related Art FIG.
45 is a top view showing a conventional vacuum chuck type wafer chuck device shown in Japanese Patent Publication No. 45-45, and FIG. B is a sectional view taken along the line AA of FIG. In FIG. 23, 51 is a susceptor made of carbon or SiC or the like and having a vacuum chuck function, 52 is a flat wafer receiving surface of the susceptor 51,
53 is a vacuum suction groove formed in the wafer receiving surface 52, 54
Is a vacuum suction hole formed in the susceptor 51 so as to communicate with the vacuum suction groove 53 at the center of the wafer receiving surface 52. Therefore, in order to hold the wafer 55 in this wafer chuck device as indicated by the phantom line in FIG. B, the wafer 55 is placed on the wafer receiving surface 52 of the susceptor 51 and a vacuum pump (not shown) connected to the vacuum suction hole 54. When the vacuum exhaust system including is started and suction of the vacuum suction groove 53 is started,
Due to the pressure difference between the pressure inside the vacuum suction groove 53 and the external pressure, the wafer 55 is transferred to the wafer receiving surface 5 of the susceptor 51.
It is adsorbed and fixed to 2.

FIG. 24 is a longitudinal sectional view showing a conventional single-wafer type semiconductor manufacturing apparatus disclosed in, for example, Japanese Patent Laid-Open No. 3-28770. In FIG. 24, the same parts as those in FIG. 19 are designated by the same reference numerals. In FIG. 24, 61 is a chamber, 62 is a reaction chamber defined below the chamber 61,
63 is a heater chamber partitioned above the chamber 61, 64
Is a heater arranged on the susceptor 51 installed at the boundary between the reaction chamber 62 and the heater chamber 63, and 65 is a reaction gas introduction hole,
Reference numeral 66 is a dilution gas introduction hole, 67 is a gas nozzle, 68 is a reaction space between the gas nozzle 67 and the wafer 55 held by the susceptor 51, and 69 is a gas exhaust hole. Therefore,
In this semiconductor manufacturing apparatus, the wafer 5 shown by a virtual line
In order to form a SiN thin film on 5, a dummy inert gas is caused to flow through the valves of the reaction gas supply system and the dilution gas supply system (not shown), and the vacuum exhaust valve (not shown) is adjusted.
While maintaining the predetermined pressure, the wafer standby chamber (not shown) is also adjusted to the same pressure. Next, the side surface of the chamber 61 that hermetically configures the reaction chamber 62 is opened, and the wafer 55 is transferred to a position right below the susceptor 51 in the reaction chamber 62 by a transfer device (not shown) and raised to contact or contact the lower surface of the susceptor 51. The wafer 5 by evacuating from a vacuum suction hole (not shown) opened in the susceptor 51.
5 is adsorbed and fixed on the susceptor 51, and the side surface of the chamber 61 is closed to hermetically seal the storage chamber. And the heater 64
The wafer 55 is heated to a high temperature of 600 ° C. to 800 ° C. with
When the reaction gas and the diluent gas are supplied from the gas nozzle 67 to the reaction space 68, the reaction gas causes a thermochemical reaction on the wafer 55 to form a thin film on the wafer 55. The reaction gas and the diluent gas that acted on the thin film formation were gas exhaust holes 6
9 is discharged to the outside of the reaction chamber 62. After that, an inert gas is introduced into the vacuum suction hole of the susceptor 51, the leak valve (not shown) is closed, the side surface of the chamber 61 is opened, and the wafer 55 is ejected from the susceptor 51 by the jetting of the inert gas. Then, the wafer 55 is placed on the transfer device and unloaded from the storage chamber.

[0004]

In the conventional vacuum chuck type wafer chuck device shown in FIG. 23, a plurality of vacuum suction grooves 5 are formed on a flat wafer receiving surface 52 of a susceptor 51.
Since 3 is formed in a concentric shape, it is difficult for the heat of the heater 64 (see FIG. 24) to be uniformly transferred from the susceptor 51 to the wafer 55 when the thin film is formed on the wafer. There was a problem that it was difficult to make the thickness uniform. Specifically, as shown in FIG. 25, the peripheral low temperature portion 7 is arranged around the wafer 55 in the thickness direction (side surface) of the wafer 55 and from the outer peripheral surface of the wafer 55.
The film thickness of the outer peripheral portion of the wafer 55 is reduced by the heat radiation by the radiation toward 0. In addition, the wafer 5 of the susceptor 51
Heat is transferred from the vacuum suction groove 53 not in contact with the wafer 5 to the wafer 5.
5 is supplied only by radiation and gas heat transfer,
The temperature of the portion of the wafer 55 corresponding to the vacuum suction groove 53 is lowered and the film thickness is reduced. Also, heat transfer is poor in the vacuum suction holes 54 in the susceptor 51, the temperature distribution of the wafer 55 is not uniform, and a uniform film thickness distribution cannot be obtained.

In addition, in the above-described vacuum chuck type wafer chuck device, when the wafers 55 are successively mounted on the susceptor 51 and film formation (formation of a thin film on the wafer 55) is repeated, the susceptor 51 is initially used. Although the entire surface of the above is carbon or SiC, as the film formation is repeated, the same kind of film as the thin film formed on the wafer 55 is coated on the surface other than the wafer receiving surface 52 of the susceptor 51. When the film formation is repeated in this manner, the susceptor 51
Since the material and properties of the surface of the peripheral portion of the wafer receiving surface 52 change with time, the heat flow due to radiation changes, and as a result, the temperature distribution on the wafer 55 also changes and the reproducibility of the film thickness distribution deteriorates. There was also a problem.

In the conventional semiconductor manufacturing apparatus shown in FIG. 24, the temperature of the upper surface (gas nozzle head) of the gas nozzle 67 facing the wafer 55 is radiated by the susceptor 51, the central portion thereof becomes high, and the peripheral portion of the outer peripheral portion thereof becomes high. The lower the value becomes, the more heat is dissipated by the radiation from the wafer 55.
Similarly, the temperature distribution on No. 5 also becomes lower in the outer peripheral portion of the wafer 55, and there is a problem that a uniform film thickness distribution cannot be obtained. When forming a silicon nitride film using SiH ₂ Cl ₂ and NH ₃ as a reaction gas, the total pressure is 10 to 100 T.
orr, and the partial pressure of SiH ₂ Cl ₂ is 0.2 to 1 Tor
It is general that the partial pressure of r and NH ₃ is set to about 4 to 6 times the partial pressure, and the remaining partial pressure is used as a diluting gas of H ₂ or N ₂ . However, H is generated between the vacuum suction groove 53 (see FIG. 23) and the vacuum suction hole 54 (see FIG. 23) of the susceptor 51 where heat transfer is insufficient, or between the contact surfaces of the susceptor 51 with the outer periphery of the wafer 55. _{When a} gas having a high thermal conductivity such as No. ₂ flows in, it is unlikely that the surface temperature of the wafer 55 lowers correspondingly, but H ₂ gas is suitable as a diluting gas because there is a risk of implosion. It can not be said. Also, N
_{When a} gas having a low thermal conductivity such as No. ₂ flows in, the surface temperature of the wafer 55 correspondingly decreases, and there is also a problem that a uniform film thickness distribution cannot be obtained.

In addition, in the semiconductor manufacturing apparatus described above, the high temperature portion of the surface of the susceptor 51 other than the wafer receiving surface 52 (see FIG. 23) and the high temperature portion of the surface of the gas nozzle 67 are exposed to the reaction gas to grow a film. The formed film is blown up by the inert gas blown out from the vacuum suction groove 53 (see FIG. 23) after the wafer 55 is detached from the susceptor 51, and there is also a problem that the blown up film adheres to the wafer 55 as dust.

The present invention has been made to solve the above problems, and its first object is to uniformly heat a wafer to form a thin film having a uniform film thickness on the wafer. The second purpose is to improve the reproducibility of a uniform thin film, and the third purpose is to protect the wafer after film formation from the doub.

[0009]

[Means for Solving the Problem] A first aspect described in claim 1.
In the wafer chuck device according to the invention, a gas having a high thermal conductivity or a gas having a high thermal conductivity is heated inside a susceptor that holds a wafer forming a base of a semiconductor device on a flat wafer receiving surface by vacuum adsorption. A high thermal conductive gas introducing passage for introducing a gas to be decomposed is formed, and the high thermal conductive gas introducing passage is connected to a gas vacuum suction passage for vacuum adsorption of a wafer.

[0010] semiconductor manufacturing method according to a second invention according to claim 2, the reaction chamber and a gas nozzle and the wafer chuck, supplied to the surface of the wafer constituting a substrate of the semiconductor device and the reaction gas from the gas nozzle Then, in the semiconductor manufacturing apparatus for forming a thin film on the surface of a wafer by the thermochemical reaction of the reaction gas, the wafer chuck is the wafer chuck apparatus according to claim 1 , and a reaction chamber is formed in an outer peripheral portion of the gas nozzle. The chamber is provided with a gas nozzle hat that is insulated from the chamber and the wafer.

[0011] The semiconductor manufacturing apparatus according to the third invention according to claim 3, the reaction gas nozzle for supplying the surface of the wafer constituting a substrate of a semiconductor device, a thin film formed on the wafer surface and the same kind of heat When coating the radiation stable film, a vertical drive mechanism is provided to bring the gas nozzle closer to the wafer heating source than when the thin film is formed on the surface of the wafer.

[0012]

In the wafer chuck device of the first invention, when the wafer is held by the susceptor and a thin film is formed on the surface of the wafer by thermochemical reaction with the reaction gas, the high thermal conductive gas introduction path has high thermal conductivity. A gas or a gas that decomposes into a gas with high thermal conductivity by thermal decomposition is supplied to the vacuum suction passage to improve the heat transfer coefficient of the vacuum suction passage and prevent the wafer surface temperature from fluctuating with time. The thin film formed on the substrate has a uniform reproducibility of the film thickness.

In the semiconductor manufacturing apparatus of the second invention, since the gas nozzle hat makes the heat dissipation due to radiation from the wafer toward the gas nozzle uniform on the inner and outer circumferences of the wafer, the wafer has a uniform temperature distribution and is formed on the wafer. The thin film has a uniform film thickness distribution.

In the semiconductor manufacturing apparatus of the third invention, the heat radiation stabilizing film is formed by bringing the gas nozzle close to the wafer heating source, so that the heat radiation stabilizing film can be rapidly coated.

[0015]

Embodiments of the present invention will now be described with reference to FIGS. 1 to 22.
Will be explained. Example 1. 1 is a view showing a susceptor of a claw chuck type wafer chuck device as a first embodiment of the present invention. FIG. 1A is a sectional view taken along the line AA of FIG. In FIG. 1, the susceptor 1 is made of SiC, C, AlN, SU.
A material such as S, Inconel, or Al ₂ O ₃ is formed into a short cylindrical body having an outer diameter larger than that of the wafer 2 indicated by a virtual line, and the lower surface of the susceptor 1 is a flat wafer receiving surface 3
The wafer receiving surface 3 has a recess 4 having an outer diameter slightly smaller than the outer diameter of the wafer 2.
The recess 4 is provided coaxially or substantially coaxially with, and the recess 4 is formed in a spot facing of, for example, about 100 μm to 500 μm. The susceptor 1 constitutes a claw chuck type wafer chuck device that holds the wafer 2 with the wafer clamp claws 5 shown in phantom in FIG. The wafer clamp claws 5 are evenly arranged on the outer periphery of the wafer receiving surface 3.

Therefore, when the wafer 2 is sandwiched between the susceptor 1 of the first embodiment and the wafer clamp claw 5 as shown by the phantom line in FIG. A, the entire outer peripheral portion of the wafer 2 has the same width on the wafer receiving surface 3. Upon contact, heat is uniformly transferred from the susceptor 1 to the outer peripheral portion of the wafer 2. As a result, when the susceptor 1 is used in a semiconductor manufacturing apparatus that forms a thin film on the surface of the wafer 2 by thermochemical reaction with a reaction gas, the wafer 2 is heated uniformly and a thin film having a uniform film thickness distribution is formed. can do.

Example 2. 2 is a view showing a susceptor of a vacuum chuck type wafer chuck device according to a second embodiment of the present invention.
A sectional view taken along the line A-A of the diagram b and the diagram b are bottom views. In FIG. 2, the susceptor 1A is formed of a material such as carbon or SiC into a short cylindrical body having an outer diameter larger than that of the wafer 2 indicated by an imaginary line, and the lower surface of the susceptor 1A becomes a flat wafer receiving surface 3. The wafer receiving surface 3 is provided with a recess 4 having an outer diameter slightly smaller than the outer diameter of the wafer 2 coaxially or substantially coaxially with the wafer receiving surface 3. The recess 4 has a spot facing of, for example, about 100 μm to 500 μm. Is formed. A protrusion 6 is provided in the center of the bottom surface of the recess 4, and the protrusion from the bottom of the recess 4 is arranged so that the protruding surface of the protrusion 6 is the same as or substantially the same as the wafer receiving surface 3 remaining on the lower surface of the susceptor 1A. A protrusion dimension L of 6 is set. Further, a plurality of vacuum suction holes 7 are formed on the bottom surface of the concave portion 4 in a concentric circle centered on the protrusion 6, and these vacuum suction holes 7 are formed inside the susceptor 1A as shown in FIG. It penetrates the hollow portion 8 formed in a circular shape. A vacuum suction passage 9 penetrating the outer peripheral surface of the susceptor 1A is formed on the peripheral surface of the hollow portion 8. The susceptor 1A is composed of a divided body which is vertically divided into two parts along a line BB shown in FIG. Specifically, the concave portion 4, the vacuum suction hole 7, the cavity portion 8 and the vacuum suction passage 9 are formed in each of the upper and lower divided bodies, and the divided surfaces of the upper and lower divided bodies are lapped and polymerized to form a single body. The susceptor 1A is sandwiched from above and below by a susceptor support member of a semiconductor device that forms a thin film on the surface of the wafer 2 by thermochemical reaction with a reaction gas (not shown). A susceptor supporting member (not shown) is fixed to a chamber of a semiconductor device that forms a thin film on the surface of the wafer 2 by thermochemical reaction with a reaction gas. In this sandwiched state, the outer peripheral surface side opening of the susceptor 1A of the vacuum suction passage 9 is connected to the suction port of a vacuum pump (not shown) via an exhaust system such as a vacuum valve or an exhaust pipe line.

Therefore, the susceptor 1A of the second embodiment is
Holds the wafer 2 as shown in phantom in FIG.
When the wafer 2 is placed on or near the wafer receiving surface 3 of the susceptor 1A so as to come into contact with the wafer receiving surface 3 and a vacuum pump (not shown) is activated to start exhausting the vacuum suction passage 9, the cavity 8 and the recess 4, The wafer 2 is attracted and fixed to the wafer receiving surface 3 of the susceptor 1A by the pressure difference generated between the internal pressure and the external pressure. Therefore, when the susceptor 1A holds the wafer 2 by vacuum suction as shown by the phantom line in FIG.
The entire outer peripheral portion of the wafer 2 contacts the wafer receiving surface 3 with the same width, and heat is uniformly transferred from the susceptor 1A to the wafer 2. As a result, when this susceptor 1A is used in a semiconductor device that forms a thin film on the surface of the wafer 2 by a thermochemical reaction with a reaction gas (not shown), the surface temperature of the wafer 2 becomes uniform and the surface of the wafer 2 becomes A thin film having a uniform film thickness distribution can be formed. Further, since the susceptor 1A has the projection 6 on the bottom of the concave portion 4, it is possible to prevent the warp of the wafer 2 when the wafer 2 is fixed by suction. Although the projection 6 has been illustrated and described by way of example in which it is provided in the central portion of the bottom surface of the recess 4, the projection 6
It is also possible to disperse a plurality of wafers in a range in which the warp of the wafer 2 can be prevented so that the heat transfer performance from the susceptor 1A to the wafer 2 and the warp prevention of the wafer 2 can be made more compatible.

Example 3. FIG. 3 is a diagram showing a susceptor of a vacuum chuck type wafer chuck device according to a third embodiment of the present invention.
The figure is an overall sectional view corresponding to the line AA of the figure b, and the figure b is a
It is the whole sectional view equivalent to the BB line of a figure. FIG. 4 is a gas sequence showing the timing of supplying a gas to the reaction chamber when forming a thin film on the wafer of the third embodiment. In FIG. 3, a plurality of vacuum suction holes 7 are formed in a flat wafer receiving surface 3 having an outer diameter larger than that of the wafer 2 of the susceptor 1A.
Are equally distributed on a plurality of concentric circles centered on the center of the wafer receiving surface 3, and the vacuum suction holes 7 are located on concentric circles other than the outermost circle among the plurality of vacuum suction holes 7.
Penetrates into the cavity 8 formed inside the susceptor 1A as shown in FIG. This cavity 8 is the wafer receiving surface 3
Is formed into a circular shape coaxial with or substantially coaxial with, and a vacuum suction passage 9 penetrating the outer peripheral surface of the susceptor 1A is formed on the inner peripheral surface of the hollow portion 8, and the diluent gas is introduced into the inner upper surface of the hollow portion 8. A passage 10 is formed, and the dilution gas introduction passage 10 penetrates the outer peripheral surface of the susceptor 1A. Further, the vacuum suction hole 7 located on the outermost circle is connected to a vacuum suction passage 11 penetrating the outer peripheral surface of the susceptor 1A inside the susceptor 1A as shown in FIG. This susceptor 1A is a
It is configured as a single body from a divided body which is vertically divided into two at a line B-B shown in the figure. Specifically, the vacuum suction hole 7, the cavity 8 and the vacuum suction paths 9 and 11 are provided in the upper and lower divided bodies, respectively.
Etc. are formed, and the divided surfaces of the upper and lower divided bodies are lapped and polymerized to form a single susceptor 1A. The outer peripheral portion of this susceptor 1A is subjected to a thermochemical reaction with a reaction gas (not shown) to form a wafer 2 It is sandwiched from above and below by a susceptor support member of a semiconductor manufacturing apparatus that forms a thin film on the surface. In this sandwiched state, the outer peripheral surface side opening of the susceptor 1A of the vacuum suction passages 9 and 11 is connected to a suction port portion of a vacuum pump (not shown) via a vacuum exhaust system such as a vacuum valve or an exhaust pipe line to perform the dilution. The outer peripheral surface side of the susceptor 1A of the gas introduction passage 10 is connected to the outlet portion of a dilution supply cylinder (not shown) via a supply system such as a gas valve or a supply pipe. Therefore, the wafer 2 is placed on or near the wafer receiving surface 3 of the susceptor 1A, and the vacuum pump (not shown) is started to activate the vacuum suction paths 9, 1.
1. When the evacuation of the cavity 8 and the vacuum suction hole 7 is started,
The wafer 2 is attracted and fixed to the wafer receiving surface 3 of the susceptor 1A by the pressure difference generated between the pressure inside the plurality of vacuum suction holes 7 and the external pressure.

Therefore, according to the third embodiment, since the susceptor 1A has the cavity portion 8 which is formed coaxially or substantially coaxially with the wafer receiving surface 3, the wafer 2 is virtually shown in FIG. When a thin film is formed on the surface of the wafer 2 by a thermochemical reaction with a reaction gas in a semiconductor manufacturing apparatus (not shown) while holding it as indicated by a line, variation in temperature distribution in the central portion of the susceptor 1A is reduced and Heat is positively supplied to the outer peripheral portion of the susceptor 1A, and the heat is uniformly transferred to the entire wafer receiving surface 3 of the susceptor 1A. As a result, the wafer 2 is heated uniformly, and a thin film having a uniform film thickness distribution can be formed on the surface of the wafer 2. During this film formation, the gas is N ₂ → NH ₃ / under the timing shown in the gas sequence of FIG.
N ₂ → NH ₃ / SiH ₂ Cl ₂ / N ₂ (film formation) → NH ₃
/ N ₂ → N ₂ , but since this susceptor 1A has a dilution gas introducing passage 10 communicating with the cavity portion 8, the dilution gas is supplied from the dilution gas introducing passage 10 into the cavity portion 8. It This dilution gas is kept constant so that the mixing ratio of the gas in the reaction chamber sucked into the cavity 8 hardly changes with time. As a result, the surface temperature of the wafer 2 does not fluctuate with time, and a thin film having a uniform film thickness distribution can be formed on the surface of the wafer 2 with good reproducibility. In addition, a plurality of vacuum suction holes 7 for adsorbing and fixing the wafer 2 to the wafer receiving surface 3 are connected to the cavity 8 for uniformly transferring heat to the entire wafer receiving surface 3 and a vacuum exhaust system. Since the susceptor 1A as a vacuum chuck type has the cavity 8 therein, the susceptor 1A is thin and the susceptor 1A has a simple structure and is formed in a small size. it can.

Example 4. In the third embodiment, the cavity portion 8 is provided only at one central portion of the susceptor 1A, but in the fourth embodiment, the cavity portion 8 is divided into a plurality of blocks as shown in FIG. That is, FIG. 5 is a view showing a susceptor of a vacuum chuck type wafer chuck device as a fourth embodiment of the present invention, and FIG.
An overall cross-sectional view corresponding to the line AA in the figure, b in FIG.
FIG. 6 is an overall cross-sectional view corresponding to line −B. In FIG. 5, the susceptor 1A has a cavity portion 8 including an inner cavity portion 12 and an outer cavity portion 13. The inner cavity 12 is formed inside the susceptor 1A in a circular shape coaxial or substantially coaxial with the wafer receiving surface 3, and the inner cavity 12 communicates with the vacuum suction holes 7 located on concentric circles other than the outermost circle. The outer cavity portion 13 is spaced apart from the inner cavity portion 12, and the outer cavity portion 13 is formed in an annular shape that is coaxial or substantially coaxial with the inner cavity portion 12. Vacuum suction passages 9 and 14 and dilution gas introduction passages 10 and 15 are connected to the inner cavity portion 12 and the outer cavity portion 13, respectively. The vacuum suction passage 9 connected to the inner cavity portion 12 and the vacuum suction passage 14 connected to the outer cavity portion 13 are equally spaced from each other in the circumferential direction so as not to overlap each other vertically as shown in FIG. Diluting gas introduction passage 10 connected to the cavity 12 and the outer cavity 1
As shown in FIG. 5b, the dilution gas introduction passages 15 connected to the nozzles 3 are arranged so as to face each other on the diametrical line with their positions shifted in the circumferential direction so as not to overlap each other in the vertical direction.

Therefore, according to the fourth embodiment, the susceptor 1A has the cavity portion 8 divided into a plurality of blocks, ie, the inner cavity portion 12 and the outer cavity portion 13, so that the wafer 2 is vacuum-sucked. Is held as indicated by a phantom line in FIG. A, and when a thin film is formed on the surface of the wafer 2 by a thermochemical reaction with a reaction gas in a semiconductor manufacturing apparatus (not shown), the susceptor 1A is heated by the heater of the semiconductor manufacturing apparatus. Independently changing the pressure inside the inner cavity 12 and the pressure inside the outer cavity 13 in accordance with the above method, the temperature distribution on the surface of the wafer 2 can be adjusted to be uniform. 15
By flowing a larger amount of dilution gas, as a result,
The surface temperature of the wafer 2 does not fluctuate with time,
A thin film having a uniform film thickness distribution can be formed on the surface of the wafer 2 with good reproducibility. The pressures of the inner cavity 12 and the outer cavity 13 are independently changed by, for example, pulling the inner cavity 12 and the outer cavity 13 with different vacuum pumps or changing the conductance separately with one vacuum pump. Can be realized by providing a vacuum valve.

Example 5. FIG. 6 is a view showing a susceptor of a vacuum chuck type wafer chuck device as a fifth embodiment of the present invention.
The figure is an overall sectional view corresponding to the line AA of the figure b, and the figure b is a
It is the whole sectional view equivalent to the BB line of a figure. This Figure 6
In the cavity in the flat wafer receiving surface 3 having a larger outer diameter than the wafer 2 of the susceptor 1A plurality of vacuum suction holes 7 are formed, the plurality of vacuum suction holes 7 that are made form the interior of the susceptor 1A A vacuum suction passage 9 that penetrates the portion 8 and the inner peripheral surface of the cavity 8 penetrates the outer peripheral surface of the susceptor 1A.
And a thin high heat conductive gas introducing passage 16 is formed on the cavity 8 side of the vacuum suction passage 9, and the high heat conducting gas introducing passage 16 penetrates the outer peripheral surface of the susceptor 1A. The high thermal conductive gas introduction passage 16 and the vacuum suction passage 9 are positioned so as to overlap with each other in the vertical direction as shown in FIG. 8B, and are evenly arranged in the circumferential direction of the susceptor 1A. The susceptor 1A is composed of a divided body which is vertically divided into two parts along the line BB shown in FIG. Specifically, a vacuum suction hole 7, a cavity portion 8, a vacuum suction passage 9 and a high thermal conductive gas introduction passage 16 are formed in each of the upper and lower divided bodies, and the divided surfaces of the upper and lower divided bodies are lapped and polymerized. And single susceptor 1A
The outer peripheral portion of the susceptor 1A is sandwiched from above and below by a susceptor support member of a semiconductor manufacturing apparatus that forms a thin film on the surface of the wafer 2 by thermochemical reaction with a reaction gas (not shown). In this sandwiched state, the outer peripheral surface side opening of the susceptor 1A of the vacuum suction passage 9 is connected to the suction port portion of a vacuum pump (not shown) through an exhaust system such as a vacuum valve or an exhaust pipe line to introduce the high thermal conductive gas. The outer peripheral surface side of the susceptor 1A of the passage 16 is connected to the outlet of a high-heat-conducting supply cylinder (not shown) via a supply system such as a gas valve or a supply pipe. Therefore, susceptor 1
When the wafer 2 is placed in the vicinity of the wafer receiving surface 3 of A or in the vicinity of contact with the wafer receiving surface 3, and a vacuum pump (not shown) is activated to start exhausting the vacuum suction paths 9 and 11, the cavity portion 8 and the vacuum suction hole 7. The wafer 2 is attracted and fixed to the wafer receiving surface 3 of the susceptor 1A by the pressure difference generated between the pressure inside the plurality of vacuum suction holes 7 and the external pressure.

Therefore, according to the fifth embodiment, the susceptor 1A has the high heat conduction gas introducing passage 16 formed in the vacuum suction passage 9 for connecting the plurality of vacuum suction holes 7 to the vacuum exhaust system. Therefore, when the wafer 2 is held by the vacuum suction as shown by the phantom line in FIG. A and a thin film is formed on the surface of the wafer 2 by a thermochemical reaction with a reaction gas in a semiconductor manufacturing apparatus (not shown), the wafer 2 In the vacuum suction passage 9 provided for exhausting the gas sucked in for vacuum adsorption from the cavity 8 to the outside of the susceptor 1A, the thin high heat-conducting gas introducing passage 16 has a high thermal conductivity such as H ₂ or He. Gas or NH
By supplying a gas that decomposes into a gas having a high thermal conductivity by thermal decomposition such as No. _3, the heat transfer coefficient by the vacuum suction passage 9 is improved, and the surface temperature distribution of the wafer 2 becomes uniform,
A thin film having a uniform film thickness distribution can be formed. Also,
The high thermal conductive gas introduction path 16 and the vacuum suction path 9 are the susceptor 1.
Since they are arranged in the circumferential direction of A equally, the heat from the high thermal conductive gas introducing passage 16 to the susceptor 1A can be equally distributed, and the improvement of the heat transfer coefficient becomes good. In addition, the high thermal conductivity gas introduction path 1
Since 6 is vertically overlapped with the vacuum suction passage 9, when the high thermal conductive gas introduction passage 16 is formed in the susceptor 1A, the division surface side of the vacuum suction passage 9 formed in one divided body of the susceptor 1A. A vertical hole is drilled, a horizontal hole along the vacuum suction path 9 is drilled from the outer peripheral surface of the divided body, and the high thermal conductive gas introduction path 16 is formed by penetrating the horizontal hole into the vertical hole. Because it can, susceptor 1A
It is possible to easily form the high thermal conductive gas introduction passage 16 in the susceptor 1A so as to communicate with the outer peripheral surface of the vacuum suction passage 9.

Example 6. In the fifth embodiment, the cavity 8 is provided, but in the sixth embodiment, as shown in FIG. 7, the cavity 8 is not provided and a plurality of vacuum suction holes 7, vacuum suction passages 9 and high thermal conductive gas introduction passages 16 are provided. It is divided into blocks. That is, FIG. 7 is a diagram showing a susceptor of a vacuum chuck type wafer chuck device as a sixth embodiment of the present invention. FIG. 7A is an overall sectional view corresponding to line AA in FIG. It is the whole sectional view equivalent to the BB line of a figure. In FIG. 7, the susceptor 1A has a plurality of vacuum suction holes 7, a plurality of vacuum suction passages 9 and a plurality of high thermal conductive gas introduction passages 16. The plurality of vacuum suction holes 7 are formed on the plurality of concentric circles centered on the center of the wafer receiving surface 3 and equally spaced. The plurality of vacuum suction passages 9 are evenly arranged in the circumferential direction of the susceptor 1A as shown in FIG. B, and each of the plurality of vacuum suction passages 9 is closed on the side of the vacuum suction hole 7 located on the innermost circle. And susceptor 1A
A plurality of vacuum suction holes 7 that are opened on the outer peripheral surface of each of the vacuum suction passages 9 and are evenly arranged on the plurality of concentric circles. That is, the plurality of vacuum suction holes 7 are equally divided so as to be located directly below the plurality of vacuum suction passages 9 on the plurality of concentric circles. A plurality of thin high thermal conductive gas introduction paths 1 are provided at the closed ends of the plurality of vacuum suction paths 9, respectively.
6 are individually communicated. As shown in FIG. 3B, the plurality of high thermal conductive gas introducing passages 16 extend toward the outer peripheral side of the susceptor 1A along the plurality of vacuum suction passages 9 so as to be positioned above and below the plurality of vacuum suction passages 9A. Is opened on the outer peripheral side.

Therefore, according to the sixth embodiment, the susceptor 1A has the vacuum suction holes 7, the vacuum suction passages 9 and the high thermal conductive gas introduction passages 16 which are divided into a plurality of blocks. In the vacuum suction passage 9 divided into two, a thin high thermal conductivity is independently provided according to the heating method of the susceptor 1A by the heater of the semiconductor manufacturing apparatus that forms a thin film on the surface of the wafer 2 by a thermochemical reaction with a reaction gas (not shown). Gas introduction path 16
By supplying a gas with a high thermal conductivity or a gas that decomposes into a gas with a high thermal conductivity by thermal decomposition,
The heat transfer coefficient by the vacuum suction passage 9 can be improved, and the surface temperature distribution of the wafer 2 can be made uniform. As a result, the surface temperature of the wafer 2 will not fluctuate with time, and a uniform film thickness will be formed on the surface of the wafer 2. A thin film having a distribution can be formed with good reproducibility. Further, since the high heat conduction gas introduction passage 16 and the vacuum suction passage 9 are equally divided in the circumferential direction of the susceptor 1A, the heat from the high heat conduction gas introduction passage 16 to the susceptor 1A can be equally divided and the heat transfer coefficient can be increased. Is improved. In addition, the high-heat-conducting gas introducing passage 16 is positioned so as to overlap with the vacuum suction passage 9 in the vertical direction, and the high-heat gas introducing passage 16 is located at a position facing the vacuum suction hole 7 on the innermost circumference circle. Because it is connected to
When the high thermal conductive gas introducing passage 16 is formed in the susceptor 1A, a vertical hole is drilled from the wafer receiving surface 3 side of the vacuum suction hole 7 on the innermost circumferential circle formed in the susceptor 1A to form an outer peripheral surface of the susceptor 1A. From the above, a horizontal hole along the vacuum suction path 9 is drilled, and the high thermal conductive gas introduction path 16 can be configured by penetrating this horizontal hole into the vertical hole. Therefore, the susceptor 1A can be used as a single unit without being divided. High thermal conductive gas introduction path 1 communicating with the outer peripheral surface of 1A and the vacuum suction path 9
6 can be easily formed on the susceptor 1A.

Example 7. FIG. 8 is a diagram showing a susceptor of a vacuum chuck type wafer chuck device as Embodiment 7 of the present invention.
The figure is an overall sectional view corresponding to the line AA of the figure b, and the figure b is a
It is the whole sectional view equivalent to the BB line of a figure. This Figure 8
In the cavity in the flat wafer receiving surface 3 having a larger outer diameter than the wafer 2 of the susceptor 1A plurality of vacuum suction holes 7 are formed, the plurality of vacuum suction holes 7 that are made form the interior of the susceptor 1A A vacuum suction passage 9 that penetrates the portion 8 and the inner peripheral surface of the cavity 8 penetrates the outer peripheral surface of the susceptor 1A.
The heat radiation stabilizing film 17 is coated on the susceptor 1A in advance. This susceptor 1A
Is used in a semiconductor device in which a thin film of SiN is formed on the surface of the wafer 2 by thermochemical reaction with a reaction gas (not shown), the heat radiation stabilizing film 17 is optimally made of SiN.
In short, the heat radiation stabilizing film 17 is optimally made of the same material as the material of the thin film formed on the wafer 2. The susceptor 1A is composed of a divided body which is vertically divided into two parts along the line BB shown in FIG. Specifically, a vacuum suction hole 7, a cavity 8 and a vacuum suction passage 9 are formed in each of the upper and lower divided bodies, and each of the upper and lower divided bodies is individually subjected to a thermochemical reaction with a reaction gas (not shown) to form a wafer. 2 is placed in a semiconductor manufacturing apparatus that forms a thin film on the surface, and the heat radiation stabilizing film 17 is coated on the entire surface of each of the upper and lower split bodies.
As a result, the heat radiation stabilizing film 17 is coated on the surfaces of the upper and lower divided bodies, the vacuum suction holes 7, the cavity portion 8 and the vacuum suction passage 9. Then, the divided surfaces of the coated upper and lower divided bodies of the heat radiation stabilizing film 17 are lapped and polymerized to form a single susceptor 1A.
The outer peripheral portion of A is supported from above and below by a susceptor support member of a semiconductor manufacturing apparatus that forms a thin film of SiN on the surface of the wafer 2 by a thermochemical reaction with a reaction gas (not shown). In this sandwiched state, the outer peripheral surface side opening of the susceptor 1A of the vacuum suction passage 9 is connected to the suction port of a vacuum pump (not shown) via an exhaust system such as a vacuum valve or an exhaust pipe line. Therefore, the wafer 2 is placed on or near the wafer receiving surface 3 of the susceptor 1A so as to come into contact with the wafer receiving surface 3, or a vacuum pump (not shown) is activated to start exhausting the vacuum suction passage 9, the cavity 8 and the vacuum suction hole 7. Then, the wafer 2 is attracted and fixed to the wafer receiving surface 3 of the susceptor 1A by the pressure difference generated between the pressure in the plurality of vacuum suction holes 7 and the external pressure.

Therefore, according to the seventh embodiment, in the susceptor 1A, the heat radiation stabilizing film 17 is coated on the entire surface of the susceptor 1A including the vacuum suction hole 7, the hollow portion 8, the vacuum suction passage 9 and the dividing surface. Therefore, when the wafer 2 is held by the above vacuum suction as shown by the phantom line in FIG. A, and a thin film is formed on the surface of the wafer 2 by a thermochemical reaction with a reaction gas in a semiconductor manufacturing apparatus (not shown), Even if the film formation on the wafer 2 is repeated, the heat emissivity of the surface of the susceptor 1A does not change, and the heat is uniformly transferred from the susceptor 1A to the entire wafer 2 to form a thin film having a uniform film thickness distribution. it can. That is, when an experiment was conducted on the heat radiation from the portion of the susceptor 1A exposed from the wafer 2, the heat loss due to the radiation to the peripheral low temperature portion was an order of magnitude higher than the heat loss due to the heat transfer in the thickness direction of the heat radiation stabilizing film 17. It has been confirmed that the heat radiation due to the material of the heat radiation stabilizing film 17 is important and that the thickness of the heat radiation stabilizing film 17 is almost irrelevant. From this experimental result, even if the film formation on the wafer 2 is repeated, the thermal emissivity of the surface of the susceptor 1A does not change, and a thin film having a uniform film thickness distribution is formed on the wafer 2. However, by repeating the film formation on the wafer 2, the film forming components adhere to the surface of the heat radiation stabilizing film 17, and when the film forming component film thus adhered has a thickness of several tens of μm or more, the adhered film forming It is preferable to replace the susceptor 1A with a new one because there is a risk that the component film may peel off and contaminate the wafer 2.

Example 8. In Example 7, the heat radiation stabilizing film 17 was coated on the entire surface of the susceptor 1A. In Example 8, however, the heat radiation stabilizing film 17 was coated only on the surface of the susceptor 1A that was exposed to the reaction gas. There is. That is, FIG. 9 is a sectional view showing a susceptor of a vacuum chuck type wafer chuck device as an eighth embodiment of the present invention. In FIG. 9, a vacuum suction hole 7, a cavity 8 and a vacuum suction passage 9 are formed in each of the upper and lower divided bodies constituting the susceptor 1A, and the divided surfaces of the upper and lower divided bodies are lapped and polymerized to form a single body. The susceptor 1A is used as the susceptor 1A, and the susceptor 1A as a single body is subjected to a thermochemical reaction with a reaction gas (not shown) to form the wafer 2
The wafer receiving surface 3 of the susceptor 1A is directed toward the reaction chamber side of the semiconductor manufacturing apparatus, and the susceptor 1A is sandwiched between the susceptor support members from above and below, and the whole susceptor 1A The heat radiation stabilizing film 17 is coated on the surface. During this coating, the reaction gas is transferred to the susceptor 1A by the susceptor support member.
Can not go the top surface, the top surface of the susceptor 1A does not touch the reaction gas, the thermal radiation stable film 17 except the upper surface of the susceptor 1A, wafer receiving surface 3 of the susceptor 1A, the outer peripheral surface of the susceptor 1A, The surfaces of the vacuum suction hole 7, the hollow portion 8 and the vacuum suction passage 9 are coated.

Therefore, according to the eighth embodiment, since the heat radiation stabilizing film 17 of the susceptor 1A is coated only on the surface of the susceptor 1A that comes into contact with the reaction gas, the wafer 2 is drawn by vacuum suction in a virtual line in FIG. When a thin film is formed on the surface of the wafer 2 by a thermochemical reaction with a reaction gas in a semiconductor manufacturing apparatus (not shown), the heat radiation stabilizing film 17 integrally divides a plurality of divided bodies serving as the susceptor 1A. The heat radiation stabilizing film 17 seals the minute gap formed between the superposed surfaces of the plurality of divided bodies on the outer peripheral surface side of the susceptor 1A. As a result, the gas can be prevented from flowing into the cavity 8 and the vacuum suction passage 9 from between the overlapping surfaces of the plurality of divided bodies constituting the susceptor 1A, and even when the film formation on the wafer 2 is repeated,
The thermal emissivity of the surface of the susceptor 1A does not change, and a thin film having a uniform film thickness distribution can be formed on the wafer 2 with good reproducibility.

Example 9. FIG. 10 is a longitudinal sectional view showing a semiconductor manufacturing apparatus for forming a SiN thin film on the surface of a wafer by thermochemical reaction with a reaction gas used in the semiconductor manufacturing method of Example 9 of the present invention.
FIG. 11 is an overall sectional view corresponding to line AA in FIG. 10. In this ninth embodiment, the heat radiation stabilizing film 17 is formed on the susceptor 1A before the wafer 2 is formed in the semiconductor manufacturing apparatus shown in FIGS.
The susceptor 1A for coating the heat radiation stabilizing film 17 is the same as that of the eighth embodiment and will be described with reference to FIG. 10 and 1
1, a heater chamber 21 and a reaction chamber 22 are vertically divided in the chamber 20, and a susceptor 1A having a vacuum chuck function is provided at a boundary between the heater chamber 21 and the reaction chamber 22.
The outer peripheral portion of the susceptor 1A is sandwiched between upper and lower heat insulating rings 23 and 24 made of quartz. The upper and lower heat insulating rings 23 and 24 are attached to the chamber 20 by susceptor support members 25 and 26, respectively. There is. Immediately after being sandwiched by the heat insulating rings 23 and 24, the susceptor 1A has a vacuum suction hole 7 and a cavity portion 8 in each of the upper and lower split bodies.
In addition, the vacuum suction passage 9 and the like are formed, and the divided surfaces of the upper and lower divided bodies are lapped and polymerized to form a single body, and the heat radiation stabilizing film 17 is not coated. The surface 3 is directed to the reaction chamber 22, and a vacuum suction passage 9 is opened to the outer peripheral portion of the susceptor 1 by the susceptor 1, the upper and lower heat insulating rings 23 and 24, the upper and lower support members 25 and 26, and the side surfaces forming the chamber 20.
A closed annular vacuum chuck internal pressure chamber 27 communicating with the above is defined and formed. A vacuum valve 28 for opening and closing a vacuum exhaust system is provided outside the side surface of the chamber 20 that constitutes the vacuum chuck internal pressure chamber 27. A gas nozzle 29 protruding from the bottom surface of the reaction chamber 22 is arranged, and a reaction gas introduction hole 30 connected to a reaction gas supply system is formed on the bottom surface of the reaction chamber 22 inside the gas nozzle 29. A reaction gas discharge hole 31 is formed in the bottom surface of the reaction chamber 22 located outside 29. The upper surface of the gas nozzle 29 is a gas nozzle head 33 having a plurality of reaction gas injection holes 32 formed therein. A reaction space 34 is formed between the gas nozzle head 33 and the wafer receiving surface 3 of the susceptor 1A, and a side surface of the reaction chamber 22 is provided with a load lock valve 35 for opening and closing a load lock chamber (not shown). Has been. A heater 36 as a wafer heating source is arranged in the heater chamber 21, and the heater 36 is placed on the susceptor 1A with a spacer 37 interposed therebetween. Good. The heater chamber 21 has a vacuum exhaust port 3
8 and an inert gas inflow hole 39 such as N ₂ are provided. Further, for example, the heater chamber 21 is 90 Torr, the reaction chamber 22 is 30 Torr, and the vacuum chuck internal pressure chamber 27 is 26 Torr.
The heater chamber 21, the reaction chamber 22, and the vacuum chuck internal pressure chamber 27 are adjusted to different pressures such as Torr.

Therefore, according to the ninth embodiment, the susceptor 1A having a vacuum suction hole 7, a hollow portion 8, a vacuum suction passage 9 and the like, which is formed as a single polymer, is a boundary between the heater chamber 21 and the reaction chamber 22. While being supported by the upper and lower heat insulating rings 23, 24, the load lock valve 35 and the vacuum valve 28 are closed, vacuum suction for the wafer chuck is stopped, and the susceptor 1A does not hold the wafer 2, The susceptor 1A is heated by the heater 36 and is heated by the heater 36 by flowing the reaction gas from the gas nozzle 29 toward the reaction space 34.
A heat radiation stabilizing film 17 made of SiN is formed on the surface of the susceptor 1A which is supplied to A and comes into contact with the reaction gas. That is, according to the ninth embodiment, before the film formation on the wafer 2, the susceptor 1
As shown in FIG. 10, the heat radiation stabilizing film 17 made of SiN having a thickness of, for example, 0.1 to 30 μm is formed on the surface of the A exposed to the reaction gas.
Is formed. It goes without saying that the susceptor 1A may be the susceptor 1 of the jaw chuck type wafer chuck device. After the heat radiation stabilizing film 17 is formed on the susceptor 1A in this way, the load lock valve 35 is opened, the wafer 2 (not shown) is loaded into the reaction chamber 22 from the load lock chamber, and the load lock valve 35 is closed. Is placed in the vicinity of contacting or in contact with the wafer receiving surface 3 of the susceptor 1A, and the vacuum valve 28 is opened to start exhausting the vacuum suction passage 9, the cavity portion 8 and the vacuum suction hole 7 of the susceptor 1A. Is adsorbed and fixed to the wafer receiving surface 3 of the susceptor 1A, and formation of the original thin film of SiN on the wafer 2 is started. As a result, according to the ninth embodiment, the heat radiation stabilizing film 17 is formed on the susceptor 1A and the thin film is formed on the wafer 2 by the same apparatus, which improves workability.

Example 10. In Example 9 described above, the vacuum suction for the wafer chuck was stopped to form the heat radiation stabilizing film 17 on the susceptor 1A.
The tenth embodiment is characterized in that the heat radiation stabilizing film 17 for the susceptor 1A is formed while performing vacuum suction for the wafer chuck. That is, in FIG. 10 and FIG. 11, the susceptor 1A is installed at the boundary between the heater chamber 21 and the reaction chamber 22, and the vacuum valve 28 is opened in a state where the wafer 2 is not attached to the susceptor 1A and the vacuum for the wafer chuck is opened. By applying SiN to the entire surface of the susceptor 1A while applying suction to the heat radiation stabilizing film 17 only on the surface of the susceptor 1A that comes into contact with the reaction gas, the same application as in Example 9 can be achieved.

Example 11. 12 is a vertical sectional view showing a semiconductor manufacturing apparatus as Embodiment 11 of the present invention, and FIG. 13 is an overall sectional view corresponding to line AA in FIG. This embodiment 11 is shown in FIG. 12 and FIG.
As shown in (1) and (2), the gas nozzle 29 of the semiconductor manufacturing apparatus is provided with a gas nozzle hat 40 to make the temperature distribution on the surface of the wafer 2 uniform, and a jaw chuck type wafer chuck device will be illustrated and described as an example. . 12 and 13, the susceptor 1 having a claw chuck function is attached to the chamber 20 through the susceptor supporting members 25 and 26 at the boundary between the heater chamber 21 and the reaction chamber 22 which are vertically divided in the chamber 20. Heat insulating ring made of quartz 2
The gas nozzle 29 that is sandwiched by 3, 24 and forms a reaction space 34 between the susceptor 1 and the susceptor 1 has a gas nozzle hat 40. The gas nozzle hat 40 projects laterally from the outer peripheral portion of the gas nozzle head 33. The gas nozzle hat 40 is formed in a closed ring shape that is continuous over the entire area of the gas nozzle head 33 in the circumferential direction. The gas nozzle hat 40 and the gas nozzle 29 are made of a material having good thermal conductivity. The gas nozzle hat 40 has a step portion on the inner peripheral portion thereof, and the step portion is fitted into the step portion formed on the outer peripheral portion of the gas nozzle 29 from above, so that the gas nozzle hat 40
Although an example is shown in which the gas nozzle 29 is attached to the gas nozzle 29, the inner peripheral portion may be welded to the gas nozzle 29 without providing the step portion. The gas nozzle hat 40 is insulated from the chamber 20 forming the reaction chamber 22 at the tip (outer peripheral portion) of the gas nozzle hat 40 that is not attached to the gas nozzle 29.
Has an outer diameter greater than the outer diameter of. A reaction space continuous with the reaction space 34 formed between the gas nozzle head 33 and the susceptor 1 is formed between the upper surface of the gas nozzle hat 40 and the wafer receiving surface 3. A load lock chamber 41 is provided on the side surface of the reaction chamber 22 via a load lock valve 35, the vacuum chuck internal pressure chamber 27 has a vacuum valve 28, and the heater chamber 21 does not have a heater 36 and a vacuum exhaust port 38. And an active gas inflow hole 39. The wafer 2 is clamped by the wafer clamp claw 5 on the wafer receiving surface 3 of the wafer 2 facing the reaction chamber 22. The wafer clamp claw 5 is attached to the output shaft of the vertical drive mechanism 42 with an elastic cushioning member 43 interposed and is driven up and down. As shown in FIG. 13, the wafer clamp claws 5 are equally divided into three parts on the outer peripheral part of the wafer receiving surface 3, and the tip of the wafer clamp claw 5 for holding the wafer 2 is located from the outer peripheral part side to the inner peripheral part side of the wafer 2. It is formed to be slender.

Therefore, according to the eleventh embodiment, when the wafer clamp claw 5 is stopped at the lower limit position, the load lock valve 35 is opened and the wafer 2 is moved from the load lock chamber to the reaction chamber 22. When the wafer 2 is loaded right above the wafer 5, the vertical drive mechanism 42 is driven to move upward, the wafer clamp claw 5 lifts the wafer 2, and immediately before the wafer clamp claw 5 reaches the lift limit position, the wafer 2 moves to the susceptor 1A. Contacting the wafer receiving surface 3,
As a result of the reaction, the elastic cushioning member 43 contracts to absorb the shock that may be input to the wafer 2 from the wafer clamp claw 5 and the wafer receiving surface 3, and the wafer clamp claw 5 stops at the upper limit position and the wafer receiving surface 3 The wafer 2 is supported at three points by and. The three-point support of the wafer clamp claw 5 can support the wafer 2 most stably in the state where the contact area with the wafer 2 is the smallest. In this supporting state, the wafer clamping claw 5 holds the wafer 2 with the wafer receiving surface 3 with an appropriate force so as not to damage the wafer 2 by the elastic force for restoring the contraction of the elastic cushioning member 43. After that, the heater chamber 21, the reaction chamber 22, and the vacuum chuck internal pressure chamber 27 are adjusted to a predetermined pressure by vacuum suction or introduction of a reaction gas, an inert gas, etc.
When 6 is heated, the surface of the wafer 2 is heated to about 700 ° C. through the susceptor 1, and the gas nozzle head 33
The surface of the gas nozzle hat 40 is heated to about 400 ° C. by receiving radiant heat from the susceptor 1A and the wafer 2. Since the gas nozzle head 33 and the gas nozzle hat 40 have good heat conduction and the gas nozzle hat 40 is insulated from the chamber 20 that constitutes the reaction chamber 22, the temperature distribution in the upper surface of the gas nozzle head 33 and the gas nozzle hat 40 is quite good. Become. Further, the gas nozzle hat 40 is larger than the outer diameter of the wafer 2, and the heat dissipation due to the radiation from the wafer 2 toward the gas nozzle 29 is almost equal over the entire surface of the wafer 2, and a uniform temperature distribution on the surface of the wafer 2 is achieved. Therefore, the reaction gas in the reaction space 34 is
A thermochemical reaction occurs on the wafer 2 to form a thin film on the wafer 2 with a uniform film thickness. Further, by using an air cylinder, a pulse motor, a DC motor, or the like as the vertical drive mechanism 42, it is possible to extremely reduce the pollution of the air cleaning environment of semiconductor manufacturing. In the eleventh embodiment, the vacuum susceptor 1A may be replaced with a vacuum chuck type susceptor 1A, and the same applies.

Example 12 In the eleventh embodiment, the gas nozzle hat 40 is formed horizontally in the horizontal direction, but the twelfth embodiment is characterized in that the gas nozzle hat 40A is inclined upward, and a vacuum chuck type wafer chuck device is shown as an example. Explain. That is, FIG. 14 is a vertical sectional view showing a semiconductor manufacturing apparatus as Embodiment 12 of the present invention, and FIG.
It is the whole sectional view corresponding to the A line. In FIG. 14 and FIG. 15, the closed annular gas nozzle hat 40A is formed in an upward slant that inclines from the gas nozzle 29 side to the outer peripheral side of the susceptor 1. The corner portion 44 of the upper inclined surface and the upper horizontal surface of the gas nozzle hat 40A is arranged to face the outer peripheral portion of the wafer 2 supported by the susceptor 1 substantially apart from each other. In the twelfth embodiment, the vacuum chuck type susceptor 1 is shown as an example. Therefore, the wafer 2 is loaded into the reaction chamber 22 from the load lock chamber 41 and the susceptor 1A is transferred.
When the wafer is loaded directly below the wafer receiving surface 3, the lift pins (not shown) rise from the lower limit position to lift the wafer 2 toward the wafer receiving surface 3 or close to the wafer receiving surface 3, and the lift pins move to the upper limit position. In the stopped state, the wafer 2 is sucked and fixed to the wafer receiving surface 3 by vacuum suction from the susceptor 1, and the lift pins descend from the ascending limit position to the descending limit position to wait for the next wafer 2 to be lifted. To do.

Therefore, according to the twelfth embodiment, since the gas nozzle hat 40A is formed to be inclined upward,
The rate of seeing the reaction chamber 22 having a low temperature from the wafer 2 is reduced, and the temperature decrease of the outer peripheral portion of the wafer 2 can be improved. In the twelfth embodiment, the claw chuck type susceptor 1 may be substituted for the susceptor 1A and the same can be applied.

Example 13. 16 is a vertical sectional view showing a semiconductor manufacturing apparatus as Embodiment 13 of the present invention. The thirteenth embodiment is characterized by controlling the inert gas pressure when the wafer 2 is removed from the vacuum chuck type susceptor 1 of the semiconductor manufacturing apparatus as shown in FIG. That is, in FIG. 16, the heater chamber 21 and the reaction chamber 22 that are vertically divided into the chamber 20 are provided.
The susceptor 1A having a claw chucking function is arranged on the boundary between the susceptor 1A and the heat insulating rings 23 and 24 made of quartz attached to the chamber 20 via the susceptor supporting members 25 and 26, and is opened at the outer peripheral portion of the susceptor 1. 2 forming a vacuum chuck internal pressure chamber 27 communicating with the vacuum suction passage 9
A vacuum valve 28, a pressure gauge 45, and an inert gas valve 46 are connected to the outside of the side surface of the vacuum chuck 0.
A pipe line 47 connected to the outside of the chamber 20 is connected to the reaction chamber 22 and the reaction chamber 22, and a differential pressure gauge 48 is provided in the pipe line 47. The differential pressure gauge 48 detects the pressure in the vacuum chuck internal pressure chamber 27 and the reaction chamber. When the pressure difference from the pressure of 22 becomes equal to or less than a predetermined set value, the inert gas valve 46 is closed. The reaction chamber 22 includes a load lock valve 35 and a gas nozzle 29.
A reaction space 34, a reaction gas introduction hole 30, a reaction gas discharge hole 31, and a pressure gauge 49, the vacuum chuck internal pressure chamber 27 has a vacuum valve 28, and the heater chamber 21 has a heater 36.
It has a vacuum exhaust port 38 and an inert gas inflow hole 39. The pressure gauges 45 and 49, the conduit 47, and the differential pressure gauge 48
And constitute a gas introduction stop control means.

Therefore, according to the thirteenth embodiment, the pressure gauge 45 is connected to the vacuum chuck internal pressure chamber 27, the pressure gauge 49 is connected to the reaction chamber 22, and the vacuum chuck internal pressure chamber 27 and the reaction chamber 22 are connected. A differential pressure gauge 48 is provided on the connecting pipe 47.
When the wafer 2 is removed from the susceptor 1 after a thin film having a predetermined film thickness is formed on the wafer 2 by the thermochemical reaction of the reaction gas, the vacuum valve 28 is closed and the inert gas valve 46 is opened. An inert gas as a gas for dropping the wafer is supplied from the vacuum chuck internal pressure chamber 27 to the vacuum suction hole 7 through the vacuum suction passage 9 of the susceptor 1, and the pressure inside the vacuum suction hole 7 is the weight of the wafer 2. Reaction chamber 2 at the above pressure
When the pressure becomes less than the pressure in 2, the gas valve is closed to control the introduction of the inert gas. For example, when the detection operation of the differential pressure gauge 48 is inoperative and the operator manually operates the inert gas introduction stop control, the vacuum valve 28 is closed and the inert gas valve 46 is opened. From then on, the operator monitors the pointers of the pressure gauges 45 and 49, and the operator checks that the pressure in the vacuum chuck internal pressure chamber 27 becomes equal to or higher than the pressure at which the wafer 2 falls due to its own weight and lower than the pressure in the reaction chamber 22. The inert gas valve 46 is closed. When the detection operation of the differential pressure gauge is activated and the inert gas introduction stop control is automatically controlled, the vacuum valve 28 is closed and the inert gas valve 46 is opened. The pressure gauge 48 detects the pressure difference between the pressure inside the vacuum chuck internal pressure chamber 27 and the pressure inside the reaction chamber 22, and when the pressure difference becomes equal to or lower than a predetermined value, the differential pressure gauge 48 detects the inert gas valve 46. Close. As a result, the pressure in the vacuum suction hole 7 of the susceptor 1A and the reaction chamber 22
If the differential pressure with the internal pressure is approximated by less than the weight of the wafer 2,
The wafer 2 is detached from the wafer receiving surface 3 of the susceptor 1A by its own weight and falls, and is received by a transfer device (not shown). When the wafer 2 is detached from the susceptor 1A, the inert gas is blown into the reaction chamber 22 through the vacuum suction hole 7 of the susceptor 1A. The pressure of the inert gas is different from the pressure in the reaction chamber 22. Since the approximation is made with less than its own weight, the reaction chamber 22
It is possible to prevent the deposits on the exposed portion of the wafer from being blown up, and there is no inconvenience that the wafer 2 is contaminated with the deposits.

Example 14 FIG. 17 is a diagram for explaining Embodiment 14 of the present invention.
A. P, VOL. 69, No. 12,15 June19
FIG. 18 is a diagram showing the temperature dependence of the decomposition of NH ₃ gas, which is derived from 91, and FIG. 18 is the NH ₃ / S of the SiN refractive index as the result of the experiment conducted by the present inventors to explain this Example 14.
It is a diagram illustrating a iH ₂ Cl ₂ flow rate dependency. In this fourteenth embodiment, when a vacuum chuck type wafer chuck device is used in the semiconductor manufacturing apparatus in the above-described embodiments, the outer peripheral portion of the wafer is generated by gas entering between the contact surfaces of the wafer receiving surface and the outer peripheral portion of the wafer. The present invention relates to a suitable diluent gas for preventing the temperature drop of In particular,
Diluting gas dilutes the reaction gas with a gas that decomposes to a gas with high thermal conductivity by thermal decomposition, thereby increasing the heat transfer rate of the gas sucked into the vacuum chamber for the vacuum chuck formed in the susceptor. , Preventing temperature drop at the outer periphery of the wafer.

For example, NH ₃ / SiH ₂ Cl ₂ is used as a reaction gas of a semiconductor manufacturing apparatus for forming a thin film on the surface of a wafer by a thermochemical reaction with the reaction gas, and the NH ₃ / Si is used.
The flow rate ratio of H ₂ Cl ₂ is set to about 4 to 6 times, and it is common to use H ₂ or N ₂ as a diluent gas. For the reasons described above, when a susceptor having a flat wafer receiving surface is used and N ₂ is used as the diluent gas, the film thickness is slightly reduced at the outer peripheral portion of the wafer, and H ₂ having high thermal conductivity is used as the diluent gas. However, the use of is not suitable as a diluting gas because the reduction in film thickness is improved but there is a risk of implosion.

Therefore, it was considered to dilute the reaction gas with NH ₃ . When a thin film of SiN is formed on a wafer, the surface temperature of the wafer is about 700 ° C. and the heater temperature is 900-
It is close to 1000 ° C. Further, the NH ₃ gas violently decomposes at 800 ° C. to form H ₂ as shown in FIG. Thus, from FIG. 17, NH ₃ gas as the diluent gas touches the high temperature portion of the susceptor generates of H ₂ high thermal conductivity and degradation in the susceptor near, H ₂ produced by this thermal decomposition amount As a result, there is no risk of implosion, and the heat transfer rate of the gas sucked into the vacuum chamber for the vacuum chuck formed in the susceptor is increased, and the high thermal conductivity that prevents the temperature drop at the outer periphery of the wafer is provided. You can understand that it will work.

In addition, from the experimental results shown in FIG.
_When the flow rate ratio of ₃ / SiH ₂ Cl ₂ is 6 or more, the refractive index of SiN formed on the wafer surface is saturated, and it is considered that the SiN film having a stoichiometric composition is formed on the wafer surface. it will be understood that there is no problem in using NH ₃ as the diluent gas.

Example 15. FIG. 19 is a vertical sectional view showing a semiconductor manufacturing apparatus as Embodiment 15 of the present invention. In FIG. 19, 2 is a wafer, 17 is a heat radiation stabilizing film previously coated on the upper surface of the gas nozzle head 33, 22 is a reaction chamber, 36 is a heater, 29 is a gas nozzle, 31 is a reaction gas discharge hole, 3
Reference numeral 2 is a reaction gas injection hole, and 33 is a gas nozzle head.

Next, the operation of the fifteenth embodiment will be described.
When the wafer 2 fixed to the heater 36 is heated to a predetermined temperature and the reaction gas is blown from the gas injection hole 32 to the entire surface of the wafer 2, the reaction gas flows to the outer peripheral side of the wafer 2 and the reaction gas exhaust hole 31. Exhausted from. as a result,
Although a thin film is formed on the wafer 2 due to a thermochemical reaction, the same kind of film is also formed on the heated gas nozzle head 33. However, since the gas nozzle head 33 is coated with the heat radiation stabilizing film 17 of the same type as the thin film formed on the wafer 2, the deposits during the thin film formation are less likely to be peeled off, and the gas nozzle head 33 of the related art is not easily removed.
The emissivity does not change from its initial state without the need for cleaning the. Therefore, it is possible to obtain high reproducibility of the film formation rate and uniform distribution over a long period of time under the conditions set in the initial stage.

Example 16. 20 is a vertical sectional view showing a semiconductor manufacturing apparatus as Embodiment 16 of the present invention. 20 is exactly the same as FIG. 19 except that the heat radiation stabilizing film 17 of the same kind as the thin film formed on the wafer 2 is not formed on the gas nozzle head 33, and the conditions for forming the thin film on the wafer 2 are shown in FIG. Before setting, the radiant heat of the heater 36 is applied to the gas nozzle head 33.
Is heated and a reaction gas is flowed to form a heat radiation stabilizing film 17 of the same type as the thin film formed on the wafer 2 on the entire surface of the gas nozzle head 33. Then, the conditions are set and the thin film formation on the wafer 2 is started. Therefore, this Example 1
According to No. 6, since the heat radiation stabilizing film 17 is formed by the same apparatus as that for forming the wafer 2, no special cost for coating the heat radiation stabilizing film 17 is required.

Example 17 FIG. 21 is a vertical sectional view showing a semiconductor manufacturing apparatus as Embodiment 17 of the present invention. 21 is exactly the same as FIG. 19 except that the heat radiation stabilizing film 17 of the same kind as the thin film formed on the wafer 2 is not formed on the gas nozzle head 33, and the conditions for forming the thin film on the wafer 2 are shown in FIG. Before setting, a dummy wafer 2A made of a member that transmits radiant heat, for example, quartz, sapphire glass, or the like is fixed, and the gas nozzle head 33 is heated by the radiant heat of the heater 36 transmitted from the dummy wafer 2A to flow a reaction gas. Thus, a heat radiation stabilizing film 17 of the same type as the thin film formed on the wafer 2 is formed on the entire surface of the gas nozzle head 33.
Then, the conditions are set and the thin film formation on the wafer is started. Therefore, according to the seventeenth embodiment, the dummy wafer 2
Since the thin film is formed on the wafer 2 subsequent to the formation of the heat radiation stabilizing film 17 on A, the film formation on the wafer 2 is stabilized.

Example 18. 22 is a vertical sectional view showing a semiconductor manufacturing apparatus as Embodiment 18 of the present invention. In FIG. 22, reference numeral 56 is a vertical drive mechanism such as an air cylinder for vertically moving the gas nozzle 26, a pulse motor and a DC motor, and 57 is a bellows. The vertical drive mechanism 56 drives the gas nozzle 29 to move the gas nozzle head 33 to the wafer 2. It is formed in the gas nozzle 29 in the case of a normal thin film forming process by bringing the heater 36 closer to the heater 36 and heating it sufficiently than in the case of forming a thin film, and then blowing out the reaction gas from the reaction gas injection hole 32. It is possible to coat the entire region of the gas nozzle head 33 with the heat radiation stabilizing film 17 of the same type as the thin film to be formed on the wafer 2 at a speed higher than the speed.

[0049]

According to the wafer chucking device of the first invention, when the wafer is held by the susceptor and a thin film is formed on the surface of the wafer by thermochemical reaction with the reaction gas, the high thermal conductive gas introduction path has a thermal conductivity. Gas with a high thermal conductivity or a gas that decomposes into a gas with high thermal conductivity by thermal decomposition is supplied to the vacuum suction passage to improve the heat transfer coefficient of the vacuum suction passage and prevent the wafer surface temperature from fluctuating with time. The thin film formed on the wafer has a uniform reproducibility of the film thickness distribution.

In the semiconductor manufacturing apparatus according to the second aspect of the invention, the gas nozzle hat reflects heat radiation due to radiation from the wafer in the direction of the gas nozzle onto the wafer, the wafer has a uniform temperature distribution, and the thin film formed on the wafer is uniform. It has a film thickness distribution.

In the semiconductor manufacturing apparatus of the third aspect of the present invention, the heat radiation stabilizing film is formed by bringing the gas nozzle close to the wafer heating source, so that the heat radiation stabilizing film can be rapidly coated.

[Brief description of drawings]

1A and 1B are views showing a susceptor of a wafer chuck apparatus of Embodiment 1, wherein FIG. 1A is a sectional view taken along the line AA of FIG.

2A and 2B are diagrams showing a susceptor of a wafer chuck device of Example 2, which is a sectional view taken along the line AA of FIG.

3A and 3B are diagrams showing a susceptor of a wafer chuck apparatus of Example 3, wherein FIG. 3A is an overall sectional view corresponding to line AA in FIG. 3B, and FIG. 3B is corresponding to line BB in FIG. FIG.

FIG. 4 is a gas sequence showing a timing of supplying gas to a reaction chamber when forming a thin film on a wafer in Example 3.

5A and 5B are diagrams showing a susceptor of a wafer chuck device of Example 4, wherein FIG. 5A is an overall sectional view corresponding to line AA in FIG. 5B, and FIG. 5B is corresponding to line BB in FIG. FIG.

6A and 6B are diagrams showing a susceptor of a wafer chuck apparatus of Example 5, wherein FIG. 6A is an overall sectional view corresponding to the line AA in FIG. 6B, and FIG. 6B is corresponding to the line BB in FIG. FIG.

7A and 7B are diagrams showing a susceptor of a wafer chuck apparatus of Example 6, wherein FIG. 7A is an overall sectional view corresponding to line AA in FIG. 7B, and FIG. 7B is corresponding to line BB in FIG. FIG.

8A and 8B are diagrams showing a susceptor of a wafer chuck apparatus of Example 7, wherein FIG. 8A is an overall sectional view corresponding to line AA in FIG. 8B, and FIG. 8B is corresponding to line BB in FIG. FIG.

FIG. 9 is a cross-sectional view showing a susceptor of a wafer chuck device of Example 8.

FIG. 10 is a vertical cross-sectional view showing a semiconductor manufacturing apparatus used in a semiconductor manufacturing method of Example 9;

11 is an overall cross-sectional view corresponding to line AA in FIG.

FIG. 12 is a vertical sectional view showing a semiconductor manufacturing apparatus according to an eleventh embodiment.

FIG. 13 is an overall cross-sectional view corresponding to line AA in FIG.

FIG. 14 is a vertical sectional view showing a semiconductor manufacturing apparatus of Example 12;

15 is an overall cross-sectional view corresponding to line AA in FIG.

FIG. 16 is a vertical sectional view showing a semiconductor manufacturing apparatus of Example 13;

FIG. 17 is a diagram showing the temperature dependence of the decomposition of NH ₃ gas for explaining Example 14;

FIG. 18 is a diagram showing the NH ₃ / SiH ₂ Cl ₂ flow ratio dependency of the SiN refractive index as an experimental result of Example 14;

FIG. 19 is a vertical sectional view showing a semiconductor manufacturing apparatus of Example 15;

FIG. 20 is a vertical sectional view showing a semiconductor manufacturing apparatus of Example 16;

FIG. 21 is a vertical sectional view showing a semiconductor manufacturing apparatus of Example 17;

FIG. 22 is a vertical sectional view showing a semiconductor manufacturing apparatus of Example 18;

23A and 23B are views showing a conventional wafer chuck device, wherein FIG. 23A is a top view and FIG. 23B is a sectional view taken along the line AA of FIG.

FIG. 24 is a vertical sectional view showing a conventional semiconductor manufacturing apparatus.

FIG. 25 is a diagram for explaining a conventional operation.

[Simple explanation of symbols]

1,1A susceptor 2 wafers 2A dummy wafer 3 Wafer receiving surface 4 recess 7 Vacuum suction hole (vacuum suction passage) 8 cavity 9 Vacuum suction passage (vacuum suction passage) 16 High heat conduction gas introduction path 17 Heat radiation stable film 20 chambers 29 gas nozzle 40,40A gas nozzle hat 56 Vertical drive mechanism 45 pressure gauge 47 pipelines 48 differential pressure gauge

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshihiko Kusakabe 8-1-1 Tsukaguchi Honcho, Amagasaki City Mitsubishi Electric Corporation Production Engineering Laboratory (72) Inventor Yoshimi Kinoshita 8-1-1 Tsukaguchi Honmachi, Amagasaki No. Mitsubishi Electric Corporation Production Technology Laboratory (72) Inventor Katsuhisa Kitano 8-1-1 Tsukaguchi Honcho, Amagasaki City Mitsubishi Electric Corporation Production Technology Laboratory (72) Inventor Kazuo Yoshida 8-chome Tsukaguchi Honcho, Amagasaki City No. 1 Mitsubishi Electric Corporation Production Engineering Laboratory (72) Inventor Koichiro Tsutahara 4-1-1 Mizuhara, Itami City Mitsubishi Electric Co., Ltd. Kita Itami Works (72) Inventor Kenji Hiramatsu 8-chome Tsukaguchi Honcho, Amagasaki City No. 1 Mitsubishi Electric Co., Ltd. Production Engineering Laboratory (72) Inventor Kenichiro Yamanishi 8-1-1 Tsukaguchihonmachi, Amagasaki Mitsubishi Electric Ceremony Company Production Technology Research Laboratory (72) Inventor Toshihiko Noguchi 1-1-1, Imajuku Higashi, Nishi-ku, Fukuoka City Mitsubishi Electric Corporation Fukuoka Factory (56) Reference JP 4-289168 (JP, A) JP JP 4-299832 (JP, A) JP-A 1-234391 (JP, A) JP-A 4-228569 (JP, A) JP-A 7-194965 (JP, A) JP-A 5-217912 (JP, A) A) JP-A-4-277627 (JP, A) JP-A-5-259083 (JP, A) JP-A-6-20975 (JP, A) JP-A-5-326425 (JP, A) JP-A-6 -49648 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/31 C23C 16/455 C23C 16/458 C23C 16/46 H01L 21/68

Claims (3)

(57) [Claims] 1. A wafer chuck device having a susceptor for holding a wafer constituting a base of a semiconductor device by vacuum suction, wherein a gas having a high thermal conductivity or a gas having a high thermal conductivity is provided inside the susceptor. A wafer chuck device characterized in that a high thermal conductive gas introducing path for introducing a gas to be decomposed is formed, and the high thermal conductive gas introducing path is connected to a gas vacuum suction path for vacuum suction of a wafer. 2. A reaction chamber is provided with a gas nozzle and a wafer chuck, and the reaction gas is supplied from the gas nozzle to the surface of a wafer forming a substrate of a semiconductor device, and the reaction gas is thermochemically reacted to the surface of the wafer. In a semiconductor manufacturing apparatus for forming a thin film, the wafer chuck is the wafer chuck apparatus according to claim 1 , and a chamber forming a reaction chamber and a gas nozzle hat insulated from the wafer are provided on an outer peripheral portion of the gas nozzle. A semiconductor manufacturing apparatus characterized by the above. 3. The heat of the reaction gas is provided by having a gas nozzle in the reaction chamber, supplying the reaction gas from the gas nozzle to the surface of a wafer constituting a base of a semiconductor device, and heating the wafer by a wafer heating source. In a semiconductor manufacturing apparatus that forms a thin film on the surface of a wafer by a chemical reaction, the gas nozzle forms a thin film on the surface of the wafer when the same kind of thermal radiation stabilizing film as the thin film formed on the surface of the wafer is coated on the gas nozzle. A semiconductor manufacturing apparatus comprising a vertical drive mechanism that is closer to the wafer heating source than when the above is performed.