JP2002289556A - Jig for forming film, production method therefor and apparatus for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a jig for forming film, a manufacturing method therefor and an apparatus for manufacturing semiconductor device with which the number of times of dummy film forming required for stabilizing film forming conditions is decreased, a cleaning cycle is prolonged, throughput is improved and the consumption of raw materials can be reduced. SOLUTION: The apparatus for manufacturing semiconductor device for forming a film composed of a material containing a platinum metal on a wafer 54 has a cover plate 56 for covering the peripheral portion of the wafer 54 in the case of forming the film composed of the material containing the platinum metal on the wafer 54. The cover plate 56 is formed to have a surface containing the platinum metal at least.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming jig for forming a platinum group metal or an alloy or oxide thereof, an oxide of an alloy, and the like, a method of manufacturing the same, and an apparatus for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, DRAMs (Dynamic Random Acceses) have been developed.
s Memory) and FRAM (Ferroelectric Random Access)
2. Description of the Related Art In memory-based semiconductor devices such as memory devices, the capacity of capacitors has been rapidly increasing. Along with this,
The structure of the capacitor is MIS (Metal-Insulator-Semico
nductor) structure, MIM (M
etal-Insulator-Metal) structure. Further, as the capacitor dielectric material, a higher dielectric constant material such as high tantalum oxide or barium strontium titanate dielectric _{constant, PZT (PbZr x Ti 1-} x O 3) and SBT
Use of a ferroelectric material such as (SrBi ₂ Ta ₂ O ₉ ) has been studied. At this time, as the storage node, an electrode material that does not deteriorate the characteristics of these dielectric films, such as a metal or a conductive oxide having excellent oxidation resistance, is selected.

[0003] From the above-mentioned background, as storage nodes, platinum-group metals having excellent oxidation resistance such as Ru, Ir and Pt, conductive metal oxides such as RuO ₂ and IrO ₂ , and SrR are used.
A semiconductor device using a conductor having a perovskite structure such as uO has been disclosed (for example, Japanese Patent Application Laid-Open No. 7-297).
364, JP-A-8-335679 and JP-A-8-340091).

In the above prior art, a metal or conductive metal oxide film having excellent oxidation resistance is formed by a physical film forming method such as a sputtering method or a vapor deposition method. Further, heat treatment is applied to the formed film to improve adhesion, reduce hillocks and pinholes, roughen the surface, and the like.

[0005]

However, it has been known that platinum group metals and their compounds have a very high diffusion rate in Si, and that when the diffusion occurs, the transistor characteristics are degraded. Therefore, in order to prevent film formation on the back surface of the wafer as much as possible, the film forming apparatus has been devised. Alternatively, a process of removing a film formed on the back surface of the wafer by using a wet process has been added.

Heretofore, in a film forming apparatus, a donut-shaped jig called a shadow ring or a cover plate has been generally used as a means for reducing the wraparound of the film material on the back surface of the wafer. These jigs are made of quartz or ceramics, and cover the edge of the wafer placed on the susceptor, so that the wraparound of the film material to the back surface of the wafer is reduced. Thus, it is possible to prevent film formation on the back surface of the wafer.

On the other hand, since the jig is located near the wafer, for example, the emissivity of the jig greatly affects the wafer temperature during film formation. Each time a film is formed on the wafer, a film is also formed on the jig, so that the emissivity also changes as the film formation time elapses. If the emissivity of the jig is not stable, the wafer temperature will not be stable either. As described above, the state of the jig located in the vicinity of the wafer affects the film forming conditions, and the influence on the reproducibility and uniformity of the film formed on the wafer cannot be ignored.

Therefore, in general, dummy film formation is performed on a number of wafers in order to adjust the state of the jig.
Then, after a film is formed to some extent on a jig to adjust a state in which a stable film is formed on the wafer, an actual film is formed.

However, the raw materials for platinum group metals and their compounds are very expensive. In particular, the raw material of the chemical vapor deposition (CVD) method is
Some can cost tens of thousands of yen per gram. When a dummy film is formed using such an expensive raw material, the cost is extremely high.

Furthermore, the film formed on the jig by the dummy film formation contains a large amount of by-products, and has very poor adhesion to the quartz or ceramic jig. For this reason, the film formed on the jig was easily peeled off, and particles were easily generated. As a result, the jig and the like must be frequently cleaned or replaced, and the cleaning cycle of the film forming apparatus is shortened.

An object of the present invention is to reduce the number of times of dummy film formation necessary for stabilizing film formation conditions, lengthen a cleaning cycle, and realize high throughput and low material consumption. It is an object of the present invention to provide a film forming jig, a method of manufacturing the same, and a semiconductor device manufacturing apparatus.

[0012]

The object of the present invention is to provide a film forming jig for covering a peripheral portion of a substrate when a film made of a material containing a platinum group metal is formed on the substrate. The jig is achieved by a film forming jig characterized in that at least the surface is formed of a material containing a platinum group metal.

The object of the present invention is also a method of manufacturing a film-forming jig for covering a peripheral portion of a substrate when a film made of a material containing a platinum group metal is formed on the substrate. Forming a base plate formed in a shape covering the portion, and forming a coating layer made of a material containing a platinum group metal on the surface of the base plate. This is achieved by a manufacturing method.

In the method of manufacturing a film forming jig, the method may further include, after the step of forming the coating layer, a heat treatment for improving the adhesion between the base plate and the coating layer. It may be.

[0015] Further, the above object is to provide a semiconductor device manufacturing apparatus for forming a film made of a material containing a platinum group metal on a substrate, wherein the film made of the material containing the platinum group metal is formed on the substrate. A jig for forming a film that covers a peripheral portion of the substrate, wherein the jig for forming a film has at least a surface formed of a material containing a platinum group metal. Achieved by the device.

The object of the present invention is to cover a peripheral portion of the semiconductor device with a film-forming jig having at least a surface formed of a material containing a platinum group metal, and to form a material containing a platinum group metal on the substrate. This is achieved by a method for manufacturing a semiconductor device, characterized by forming a film comprising:

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A film forming jig, a method of manufacturing the same, and a semiconductor device manufacturing apparatus according to one embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic diagram illustrating the structure of a semiconductor device manufacturing apparatus according to the present embodiment, FIG. 2 is a schematic diagram illustrating the shape of a film forming jig according to the present embodiment, and FIG. 3 is a semiconductor device according to the present embodiment. FIG. 4 is an enlarged cross-sectional view showing the vicinity of the cover plate and the wafer edge when the Ru film is formed by the method of manufacturing the semiconductor device according to the first embodiment. 9 is a graph showing an example of a result of comparing a temperature distribution in a wafer surface with a conventional example. In the following description, an example in which Ru (ruthenium) is formed by a CVD method using a cover plate as a film forming jig will be described. However, other platinum group metals and their alloys, oxides, etc. Can also be applied to the case of forming a film.

First, the semiconductor device manufacturing apparatus according to the present embodiment will be explained with reference to FIG.

As shown in FIG. 1, the semiconductor device manufacturing apparatus according to the present embodiment mainly comprises a liquid material supply section 10 for supplying a material and a vaporizer 1 for vaporizing the liquid material.
2 and a reaction chamber 14 for growing a thin film.

The liquid material supply section 10 contains a material container 16 in which Ru (EtCp) ₂ (bisethylcyclopentadienyl ruthenium), which is a Ru material, is sealed, and THF (tetrahydrofuran) for cleaning pipes. A sealed solvent container 18 and a spare container 20 are provided.

Material container 16, solvent container 18, spare container 2
0 is connected to pipes 22a, 22b, and 22c, respectively. The pipes 22a, 22b, and 22c have an LFC (Liquid Flow Co.) for controlling a flow rate of a liquid passing through the pipes.
ntrollers) 24a, 24b, 24c are provided respectively. The pipes 22a, 22b, and 22c are connected to an N ₂ gas supply pipe 28 connected to the vaporizer 12 via a pipe 26. In the N ₂ (nitrogen) gas supply pipe 28,
MFC (Mas) that controls the flow rate of N ₂ gas passing through the piping
s Flow Controller) 30 is provided. The raw material container 1 is controlled by the N ₂ gas introduced from the N ₂ gas supply pipe 28.
By pressing the liquid level inside 6, Ru (EtCp) ₂
Is introduced into the vaporizer 12.

In the vaporizer 12, N serving as a carrier for the raw material is added.
Carrier N ₂ gas supply pipe 32 for supplying ₂ gas to vaporizer
Is connected. The carrier N ₂ gas supply pipe 32 has an MFC for controlling the flow rate of N ₂ gas passing through the pipe.
34 are provided. Further, the vaporizer 12 includes a pipe 41
Is connected to the exhaust system 38 through the refrigeration system so that the pressure in the vaporizer 12 can be reduced. The vaporizer 1 is connected to the pipe 41.
A cold trap 36 for collecting residues such as raw materials in 2 is provided. The exhaust system 38 includes the cold trap 4
0, a vacuum pump (not shown) and the like.

A pipe 42 for supplying the source gas vaporized by the vaporizer 12 into the reaction chamber 14 branches off from the pipe 41. The pipes 41 and 42 are provided with valves 43a and 43b, respectively. By switching the opening and closing of the valves 43a and 43b, it is possible to switch between the supply of the source gas into the reaction chamber 14 and the exhaust from the vaporizer 12. Further, the pipes 41 and 42 are provided with a heater 45 for suppressing the condensation of the source gas in the pipes, and the temperature is kept at, for example, about 150 ° C. during the film formation.

[0024] reaction chamber 14, a pipe 42 for supplying the raw material gas vaporized by the vaporizer 12, O ₂ (oxygen) and O ₂ gas supply pipe 44 for supplying a gas is connected. The O ₂ gas supply pipe 44 is provided with an MFC 46 for controlling the flow rate of O ₂ gas passing through the pipe.

In the reaction chamber 14, the supplied raw material and O
A shower head 48 for uniformly introducing the _two gases into the reaction chamber 14 and a susceptor 50 for mounting a wafer 54 on which a film is to be formed are provided. The portion of the susceptor 50 on which the wafer 54 is placed,
Is a heater 52 for heating.

On the heater 52 of the susceptor 50, a wafer 54 on which a Ru film is to be formed
8 is placed so as to be opposed. Further, a donut-shaped cover plate 56 which is a film forming jig for preventing film formation on the back surface of the wafer 54 is placed so as to cover the outer periphery of the wafer 54. A Ru film is formed on the cover plate 56 in advance.

Further, an exhaust system 38 is connected to the reaction chamber 14 via a cold trap 58 that collects residues such as raw materials in the reaction chamber 14 so that the pressure in the reaction chamber 14 can be reduced. I have.

The semiconductor device manufacturing apparatus according to the present embodiment is characterized mainly in that the cover plate 56, which is a film forming jig, has the same Ru film coating layer as the film formed on the wafer 54. The Ru film is used as the cover plate 56 in advance.
Thus, the number of times of forming a dummy for adjusting so as to obtain a stable film can be reduced. Further, a Ru film is formed with good adhesion to the cover plate 56 during film formation. Thereby, generation of particles due to peeling of the film formed on the cover plate 56 can be suppressed. Therefore, it is possible to lengthen the cleaning cycle.

Hereinafter, the film forming jig, which is a main feature of the semiconductor device manufacturing apparatus according to the present embodiment, will be described in detail with reference to FIG. FIG. 2A is a top view showing the shape of the cover plate, and FIG. 2B is a cross-sectional view taken along line XX ′ of FIG. 2A.

As shown in FIG. 2A, the cover plate 56 is a circular plate-like body having a donut shape with its inner peripheral portion removed. The sectional structure of the cover plate 56 is L-shaped as shown in FIG. 2B, and the diameter of the upper part of the removed inner peripheral part is smaller than the diameter of the lower part.

At the time of film formation on the wafer 54, the edge of the wafer 54 is covered with a cover portion 59 having a small diameter at the inner peripheral portion where the cover plate 56 is removed.
At this time, the distance between the edge of the wafer 54 covered by the cover 59 and the cover 59 is, for example, 0.3 mm to 3 mm.
mm.

The size of the hole of the cover portion 59 of the cover plate 56 is such that the edge cut of the wafer 54 on which a film is to be formed is 3 m.
It can be set to about 10 mm from m. For example,
In the case of an 8-inch wafer, the diameter of the hole of the cover portion 59 is
It is about 180 mm to 194 mm.

As shown in FIG. 2B, the cover plate 56 includes a base plate 60 formed of quartz, ceramics, or the like into the above-described shape, and a Ru film 62 formed as a coating layer on the entire surface. ing.

The Ru film 62 has a thickness such that the emissivity of the cover plate 56 is stable when the film is formed on the wafer 54 and the influence on the film formation is minimized. The thickness of the Ru film 62 that minimizes the influence of the cover plate 56 on the film formation is as follows:
For example, the number of times of dummy film formation required when a conventional film forming jig not covered with Ru is used, and 1
It can be calculated from the film thickness per film formation. In the semiconductor device manufacturing apparatus used by the present inventor, R
By setting the thickness of the u film 62 to about 1.0 μm or more,
The emissivity of the cover plate 56 could be stabilized.
It is desirable that the thickness of the Ru film 62 is appropriately adjusted according to the structure of the semiconductor device manufacturing apparatus to be used, the size of the wafer, and the like.

As a method of forming the Ru film 62 on the surface of the base plate 60, a plating method, a sputtering method, a CVD method, or the like described below can be used.

For example, in the case of plating, the Ru film 62 can be formed by either electrolytic plating or electroless plating. According to these plating methods, the Ru film 62 can be easily and inexpensively formed on the entire surface of the base plate 60 with good adhesion.

In the case of electrolytic plating, the composition of the plating solution was 12 g / l of ruthenium sulfate, 100 g / l of sulfamic acid,
The sulfuric acid is 10 g / l and the bath temperature is 70 ° C. A Pt / Ti electrode is used for the anode. The base plate 60 is immersed in a plating solution, and a Ru film 62 is formed on the entire surface of the base plate 60 at a current density of 5 A / dm ² .

In the case of electroless plating, Ru is added to the pentane solvent.
The base plate 60 is added to a solution of the π-allyl complex of
Immerse. Then the base plate 60 after heating to 100 ° C. in water vapor, further heated in an O ₂ atmosphere. In this way, a plating catalyst serving as a deposition nucleus for plating is formed on the base plate 60. Subsequently, the base plate 60 on which the plating catalyst is formed is immersed in a plating solution in which a hydrate of ruthenium sulfate and a reducing agent such as hydrazine hydrochloride are dissolved as in the case of electrolytic plating. Thus, a Ru film is formed on the entire surface of the base plate 60.

When the sputtering method is used, the purity is 9
A 9.999 Ru sputter target is used. A Ru film 62 is formed on the entire surface of the base plate 60 at a film forming temperature of 300 ° C., an Ar (argon) flow rate of 50 sccm, a pressure of 0.1 Torr, and a power of 0.5 kW.

In the case of the CVD method, Ru (EtCp) ₂ is used as a raw material and a film is formed while mixing with O ₂ . The film formation temperature was 330 ° C., the pressure was 0.5 Torr, and the gas flow ratio was Ru (EtCp) ₂ / O ₂ = 0.1 ccm / 20.
0 sccm, and a Ru film 6
Form 2

The film formed on the jig by the conventional dummy film formation is a film of poor quality such as a large film thickness distribution or a large amount of impurities because the film formation conditions are not optimized. Was. This is because film formation on a wafer is given priority and film formation on a jig is not considered. Therefore, the film formed on the jig by the dummy film formation had poor adhesion to the jig.

On the other hand, when the Ru film 62 is formed on the base plate 60 in advance by the above-described method, since the film forming conditions are optimized, the high quality Ru film 6 is formed on the base plate 60.
2 can be formed. Therefore, a film having good adhesion can be formed as compared with the case of forming a dummy film.

The base plate 62 on which the Ru film 62 is formed may be subjected to a heat treatment in a vacuum, in an N ₂ atmosphere, or in an O ₂ atmosphere. By doing so, the adhesion between the formed Ru film 62 and the base plate 60 can be further improved.

Next, the method for fabricating the semiconductor device according to the present embodiment will be explained with reference to FIGS.

First, a wafer 54 to be formed is placed on the heater 52 of the susceptor 50 in the reaction chamber 14. Next, a cover plate 56 is placed so as to cover the outer periphery of the wafer 54 in accordance with the position of the wafer 54. Subsequently, the pressure inside the reaction chamber 14 is reduced to a predetermined pressure by the exhaust system 38. After reducing the pressure in the reaction chamber 14 to a predetermined pressure,
The wafer 52 and the cover plate 5 are heated by the heater 52.
6 is heated to a predetermined temperature.

[0046] Then, by introducing the N ₂ gas supply line 28 the N ₂ gas into the source container 16 for pressing the liquid surface. As a result, Ru (EtCp) ₂ is supplied as a liquid raw material to the pipes 26 and 2.
8 to the vaporizer 12.

Subsequently, the liquid raw material introduced into the vaporizer 12 is vaporized by the vaporizer 12. Then introduced from the carrier N ₂ gas supply line 32 to carrier N ₂ gas to the vaporizer 12. The vaporized source gas is supplied to the pipe 42 together with the carrier N ₂ gas, and is introduced into the reaction chamber 14. Simultaneously with the introduction into the reaction chamber 14 of the raw material gas is introduced from the O ₂ gas supply pipe 44 an O ₂ gas into the reaction chamber 14. The raw material gas and O ₂ gas are supplied to the reaction chamber 1 by the shower head 48.
4 are introduced uniformly.

[0048] Thus the source gas introduced into the reaction chamber 14 reacts with O ₂ gas is decomposed on the wafer 54, Ru film 64 is deposited on the wafer 24.

In the vicinity of the edge of the wafer 54 when the Ru film 64 is deposited, selective growth of Ru occurs on the cover plate 56 covering the edge of the wafer 54 as shown in FIG. This is because the Ru film 62 is formed on the cover plate 56 in advance. Therefore, the Ru film is formed on the cover plate 56 rather than on the edge of the wafer 54. As a result, the edge of the Ru film 64 formed on the wafer 54 becomes clear, and the edge cut can be effectively performed. Further, in the vicinity of the wafer 54, the Ru film selectively grows on the cover plate 56, so that it is possible to effectively prevent the film material from flowing to the back surface of the wafer 54.

Further, since the cover plate 56 has the Ru film 62 as the coating layer, the emissivity of the cover plate 56 during film formation is constant. Therefore, the temperature of the wafer 54 can be kept stable.

FIG. 4 shows the temperature in the vicinity of the cover plate and the temperature distribution in the wafer surface when the Ru film is formed by the method of manufacturing the semiconductor device according to the present embodiment, and shows a conventional example in which the quartz cover plate is used as it is. It is a graph which shows an example of the result compared with the case. The graphs shown in FIG. 4 show the temperature distribution in the vicinity of the cover plate and the temperature distribution in the wafer surface at the time of film formation, plotted against the number of wafers formed.

As is apparent from FIG. 4, in the conventional example using a quartz cover plate having no Ru film coating layer, the temperature near the cover plate continues to rise even if 24 or more films are formed. I have. The temperature distribution in the wafer surface was 3.6% for the 24th wafer, which was not much improved compared to 4.7% for the first wafer.

On the other hand, in this embodiment, the temperature in the vicinity of the cover plate is stable at around 318.5 ° C. for several films. The temperature distribution in the wafer surface is stable at about 2%.

From the above results, it can be seen that in the method of manufacturing the semiconductor device according to the present embodiment, stable film formation conditions can be realized with a minimum number of dummy film formations. Further, in the present embodiment, the cleaning cycle that was once required for 300 film formations can be extended to one time for 500 film formations in the present embodiment.

As described above, according to the present embodiment, film formation on the back surface of the wafer 54 is prevented by using the cover plate 56 on which the Ru film 62 is formed as a coating layer in advance. And the cleaning cycle can be lengthened. Therefore, R
In the step of forming the u film, high throughput and low consumption of raw materials can be realized.

[Modified Embodiments] Various modifications are possible without being limited to the above-described embodiment of the present invention.

For example, in the above embodiment, the case where the cover plate 56 is formed of the base plate 60 on which the Ru film 62 is formed as the coating layer has been described, but the metal formed as the coating layer on the base plate 60 is limited to Ru. Not something. For example, Ir (iridium), Re
(Rhenium), Pt (platinum), Pd (palladium), R
A film of a platinum group metal such as h (rhodium) or Os (osmium) or an alloy thereof may be formed. Further, an oxide of a platinum group metal or an oxide of an alloy of a platinum group metal may be used. In this case, the metal to be formed on the wafer is preferably the same kind of metal as the metal of the cover layer of the cover plate 56, but may be a different platinum group metal or the like. This is because if a metal of the same family as the cover layer of the cover plate 56 is formed on the cover plate 56 with good adhesion, generation of particles due to film peeling can be suppressed. For example, an Ir film may be formed on a wafer using a cover plate 56 including a base plate 60 on which a Ru film 62 is formed as a coating layer.

In the above embodiment, the Ru film 62 is formed on the entire surface of the base plate 60 made of quartz or ceramics.
Is formed to form the cover plate 56. However, the base plate 60 itself may be made of a platinum group metal such as Ru, and the Ru60 film or the like may not be formed. When the Ru film 62 is formed as a coating layer on the base plate 60 made of quartz, ceramics, or the like as in the above embodiment, processing is easier than when the cover plate itself is formed of a platinum group metal such as Ru. Therefore, there is an advantage that the cost can be reduced.

In the above embodiment, the Ru film 64 is formed on the wafer 54 by the CVD method, but the film forming method is not limited to the CVD method. Depending on the type of metal to be formed, the state of the required film, etc., for example,
A film formation method such as a sputtering method or a vacuum evaporation can be applied.

In the above embodiment, the case where the cover plate as the film forming jig is applied to the semiconductor device manufacturing apparatus has been described. The present invention can also be applied to the present invention. Further, the film forming jig is not limited to the cover plate.

[0061]

As described above, according to the present invention, when a film made of a material containing a platinum group metal is formed on a substrate, at least the surface of the film forming jig covering the peripheral portion of the substrate is formed. Since it is formed of a material containing a platinum group metal, the number of times of dummy film formation necessary for stabilizing film formation conditions is reduced, and the cleaning cycle is lengthened.
Higher throughput and lower raw material consumption can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a structure of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic view illustrating a shape of a film forming jig according to an embodiment of the present invention.

FIG. 3 is an enlarged cross-sectional view showing the vicinity of a cover plate and a wafer edge when a Ru film is formed by a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a graph showing an example of a result obtained by comparing a temperature near a cover plate and a temperature distribution in a wafer surface when a Ru film is formed by a method of manufacturing a semiconductor device according to an embodiment of the present invention with a conventional example; It is.

[Explanation of symbols]

10 ... liquid material supply section 12 ... vaporizer 14 ... reaction chamber 16 ... raw material container 18: a solvent container 20 ... preliminary containers 22a, 20b, 20c ... pipes 24a, 24b, 24c ... LFC 26 ... pipe 28 ... N ₂ gas supply line Reference Signs List 30 MFC 32 Carrier N ₂ gas supply pipe 34 MFC 36 Cold trap 38 Exhaust system 40 Cold trap 41 Pipe 42 Pipe 43 a, 43 b Valve 44 O ₂ gas supply pipe 45 Heater 46 MFC 48 ... Shower head 50 ... Susceptor 52 ... Heater 54 ... Wafer 56 ... Cover plate 58 ... Cold trap 59 ... Cover part 60 ... Base plate 62 ... Ru film 64 ... Ru film

Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat II (Reference) H01L 27/108 H01L 27/10 651 21/8242 F term (Reference) 4K029 BA01 BA04 BA05 BA13 BA22 BD02 HA02 4K030 BA01 DA05 KA47 4M104 BB04 BB06 BB07 BB36 DD34 DD37 DD44 DD45 GG16 HH20 5F083 AD21 FR01 GA27 JA38 PR21

Claims (5)

[Claims] 1. A film forming jig for covering a peripheral portion of a substrate when a film made of a material containing a platinum group metal is formed on a substrate, wherein the film forming jig has at least a surface. A film forming jig formed of a material containing a platinum group metal. 2. A method of manufacturing a film-forming jig for covering a peripheral portion of a substrate when forming a film made of a material containing a platinum group metal on the substrate, comprising: A method for manufacturing a film forming jig, comprising: a step of forming a base plate molded into a substrate; and a step of forming a coating layer made of a material containing a platinum group metal on the surface of the base plate. 3. The method for manufacturing a film forming jig according to claim 2, further comprising, after the step of forming the coating layer, a step of performing a heat treatment for improving the adhesion between the base plate and the coating layer. A method for manufacturing a film forming jig, further comprising: 4. An apparatus for manufacturing a semiconductor device, wherein a film made of a material containing a platinum group metal is formed on a substrate, wherein the film made of the material containing a platinum group metal is formed on the substrate. An apparatus for manufacturing a semiconductor device, comprising: a film forming jig that covers a peripheral portion of the semiconductor device, wherein at least a surface of the film forming jig is formed of a material containing a platinum group metal. 5. A peripheral portion of the semiconductor device is covered by a film forming jig at least a surface of which is formed of a material containing a platinum group metal, and a film made of a material containing a platinum group metal is formed on the substrate. A method for manufacturing a semiconductor device, comprising: