JPH0391209A - Chip inductor - Google Patents
Chip inductorInfo
- Publication number
- JPH0391209A JPH0391209A JP1227237A JP22723789A JPH0391209A JP H0391209 A JPH0391209 A JP H0391209A JP 1227237 A JP1227237 A JP 1227237A JP 22723789 A JP22723789 A JP 22723789A JP H0391209 A JPH0391209 A JP H0391209A
- Authority
- JP
- Japan
- Prior art keywords
- chip inductor
- drum core
- molded
- core
- nio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 claims abstract description 10
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 6
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 8
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000006835 compression Effects 0.000 abstract description 2
- 238000007906 compression Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 2
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ＬＭ）ｌｚ以上の高周波で用いられるチップ
インダクタに関し、特にＴＶ、ビデオテープレコーダ等
に用いられるチップインダクタに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a chip inductor used at high frequencies of LM)lz or higher, and particularly to a chip inductor used in TVs, video tape recorders, etc.
（従来の技術）
このチップインダクタは、従来Ｎｉ −Ｚｎ系フェライ
トであって、 Ｆｅ、０．４６〜５０ｍｏｌ％、 Ｚｎ
Ｏ０〜１５ｍ。(Prior art) This chip inductor is conventionally made of Ni-Zn ferrite, and contains Fe, 0.46 to 50 mol%, and Zn.
0~15m.
１％、残りＮｉＯ及びＣｕＱの組成を有していた。そし
て、との組成のフェライトをドラム型コアに形成し、巻
線を施し、エポキシ樹脂でモールドしていた。1%, with the remainder being NiO and CuQ. Then, a drum-shaped core was formed from ferrite having the following composition, wound with wire, and molded with epoxy resin.
（発明が解決しようとする問題点）
従来のチップインダクタは、エポキシ樹脂で被覆する際
、エポキシ樹脂によりコアに応力が加わり、インダクタ
ンスが低下するという問題点、更には、チップインダク
タを回路基板等へ自動装着する際、チップインダクタを
磁石で保持して装着させること等による外部磁場が印加
された後に、インダクタンスが低下するという問題点が
生じていた。(Problems to be Solved by the Invention) Conventional chip inductors have a problem in that when coated with epoxy resin, stress is applied to the core by the epoxy resin, reducing inductance. When automatically mounting the chip inductor, a problem arises in that the inductance decreases after an external magnetic field is applied, such as by holding the chip inductor with a magnet and mounting it.
本発明は、上記の事を鑑みて、加圧特性、磁場特性の優
れたチップインダクタを提供することを目的とするもの
である。In view of the above, an object of the present invention is to provide a chip inductor with excellent pressure characteristics and magnetic field characteristics.
（問題点を解決するための手段）
本発明は、２５〜４５ｍｏｌ％のＦｅ２Ｏ８，０〜２０
ｍｏＬ％のＺｎＯ。(Means for solving the problem) The present invention provides 25 to 45 mol% Fe2O8,0 to 20
moL% ZnO.
残りがＮｉＯとＣｕＯであり、ＮｉＯのモル比がＣｕＯ
のモル比よりも多いスピネル型組成物であって、小量成
分として０．１〜１２ｗｔ％のＢｉ２Ｏ３及び０．０５
−４．０ｗｔ％のＳｉＯ□を含むフェライト組成物から
なるドラム型コアに巻線を施し、更にエポキシ樹脂でモ
ールドするものである。The rest are NiO and CuO, and the molar ratio of NiO is CuO
a spinel-type composition with a molar ratio of 0.1 to 12 wt% Bi2O3 and 0.05 as minor components.
A drum-shaped core made of a ferrite composition containing -4.0 wt% SiO□ is wound with wire, and then molded with epoxy resin.
本発明において、フェライト組成物の組成範囲を限定し
た理由は、以下のとおりである。In the present invention, the reason why the composition range of the ferrite composition is limited is as follows.
まず、主成分が上記組成範囲以外では、加圧特性、磁場
特性が悪化する。First, if the main component is outside the above composition range, the pressure characteristics and magnetic field characteristics will deteriorate.
次に、添加物Ｂｉ２Ｏ３及びＳｉＯ□は、初透磁率の値
を制御するために使用するものであり、Ｂｉ、０３を１
２ｗｔ％、 ５ｉｎ２ を４ 、０ｗｔ％より多く含有
せしめた場合、コアの焼結性が悪化し、密度がとれず、
コアの強度が低下するため、Ｂｉ２Ｏ，は０．１−１２
ｗｔ％、 ＳｉＯ□は０．０５〜４．０ｗｔ％の範囲と
する。Next, the additives Bi2O3 and SiO□ are used to control the initial permeability value, and Bi,03 is
When 2wt%, 5in2 is contained more than 4,0wt%, the sinterability of the core deteriorates, and the density cannot be maintained.
Since the strength of the core decreases, Bi2O, is 0.1-12
wt%, SiO□ is in the range of 0.05 to 4.0 wt%.
（実施例）
Ｆｅ２０３３８．２ｍｏｌ％、Ｎｉ０５０．３ｍｏｌ％
、ＺｎＯ８，４ｍｏｌ％、Ｃｕ０３．１ｍｏｌ％の主成
分に、Ｂｉ２０３３ｗｔ％、 Ｓｉｎ□０．８ｗｔ％を
添加した原料を振動ミルにて混合し、８００〜９００℃
で仮焼し、この仮焼粉体を振動ミルにて粉砕し、バイン
ダを加え造粒し、圧縮成形して丸棒状３−
コアを成形し、乾燥した後ダイヤモンドグラインダーで
溝加工し、ドラム型コアとし、これを空気中で１０５０
℃で焼威し、外径１ 、８ ｍｎ 、全長１．３５ｎｎ
、芯径０．７ｎｍのドラム型コアを得た。このドラム型
コアに直径０．０４ｍｍの被膜銅線を４０ｔｕｒｎ巻き
、更にエポキシ樹脂でモールドし、チップインダクタを
得た。この本発明の一実施例のチップインダクタと従来
例のチップインダクタとの特性比較を第１表に示す。(Example) Fe20338.2 mol%, Ni050.3 mol%
, ZnO8.4 mol%, Cu03.1 mol% as main components, Bi2033wt%, Sin□0.8wt% added were mixed in a vibrating mill, and the mixture was heated to 800-900°C.
This calcined powder is pulverized with a vibration mill, a binder is added, granulated, compression molded to form a round bar-shaped 3-core, dried, and then grooved with a diamond grinder to form a drum shape. core and hold it in air at 1050
Burned out at ℃, outer diameter 1.8 mm, total length 1.35 nn.
A drum-shaped core with a core diameter of 0.7 nm was obtained. A coated copper wire with a diameter of 0.04 mm was wound around this drum-shaped core for 40 turns, and further molded with epoxy resin to obtain a chip inductor. Table 1 shows a comparison of characteristics between the chip inductor according to this embodiment of the present invention and the conventional chip inductor.
第１表
この第１表の加圧によるＬ変化率は、ドラム型コアのエ
ポキシ樹脂モールド前後のＬにより算出した。また、磁
場印加によるＬ変化率は、このエポキシ樹脂モールドし
た状態で、外部磁場（約１０００Ｇａｕｓｓ）印加前後
のＬにより算出した。また、Ｑ４−
は、エポキシ樹脂モールド前のコアを用い、周波数１０
ＭＨｚで測定した。Table 1 The L change rate due to pressurization in Table 1 was calculated from the L before and after the epoxy resin mold of the drum-shaped core. Further, the rate of change in L due to application of a magnetic field was calculated using L before and after application of an external magnetic field (approximately 1000 Gauss) in this epoxy resin molded state. In addition, Q4- uses the core before epoxy resin molding and has a frequency of 10
Measured in MHz.
この第１表から明らかなように、本発明のチップインダ
クタは、加圧特性、磁場特性が非常に優れている。As is clear from Table 1, the chip inductor of the present invention has very excellent pressure characteristics and magnetic field characteristics.
また、第１図に、含有するＦｅ２Ｏ３量と、樹脂モール
ドした状態での磁場印加（１０００Ｇａｕｓｓ）による
Ｌ変化率とのグラフを示す。同一条件で測定した従来の
チップインダクタでは、Ｌの変化率は１０％以上であり
、本発明のチップインダクタが、加圧特性及び磁場特性
に優れていることがわかる。Further, FIG. 1 shows a graph of the amount of Fe2O3 contained and the rate of change in L due to the application of a magnetic field (1000 Gauss) in a resin-molded state. In the conventional chip inductor measured under the same conditions, the rate of change in L was 10% or more, indicating that the chip inductor of the present invention has excellent pressure characteristics and magnetic field characteristics.
（発明の効果）
本発明のチップインダクタは、加圧特性及び磁場特性に
優れており、樹脂モールドしてもＬ値の劣化がなく、又
回路への自動装着の際に強力な磁石で保持する事等によ
る外部磁場が印加されてもＬ値の劣化の少ないチップイ
ンダクタであって。(Effects of the Invention) The chip inductor of the present invention has excellent pressure characteristics and magnetic field characteristics, does not deteriorate the L value even when molded with resin, and can be held with a strong magnet when automatically attached to a circuit. The present invention is a chip inductor whose L value hardly deteriorates even when an external magnetic field is applied due to various reasons.
比較的温度特性も安定で、ＩＭＨｚ以上の高周波におい
ても損失の少ないチップインダクタであり、産業上極め
て有益なものである。It is a chip inductor with relatively stable temperature characteristics and low loss even at high frequencies of IMHz or higher, making it extremely useful industrially.
第１図は、含有するＦｅ２Ｏ３量と、樹脂モールドした
状態での磁場印加（１ｏｏＯＧａｕｓｓ）によるＬ変化
率とのグラフである。FIG. 1 is a graph of the amount of Fe2O3 contained and the rate of change in L due to the application of a magnetic field (1ooOGauss) in a resin-molded state.
Claims (1)
ｌ％のＺｎＯ，残りがＮｉＯとＣｕＯであり、ＮｉＯの
モル比がＣｕＯのモル比よりも多いスピネル型組成物で
あって、小量成分として０．１〜８ｗｔ％のＢｉ＿２Ｏ
＿３、及び０．０５〜４．０ｗｔ％のＳｉＯ＿２を含む
フェライト組成物からなるドラム型コアに巻線を施し、
更にエポキシ樹脂でモールドしたことを特徴とするチッ
プインダクタ。25-45 mol% Fe_2O_3,0-20 mo
1% ZnO, the balance is NiO and CuO, the molar ratio of NiO is greater than the molar ratio of CuO, and 0.1 to 8 wt% Bi_2O as a minor component.
_3, and a drum-shaped core made of a ferrite composition containing 0.05 to 4.0 wt% SiO_2, and
Furthermore, this chip inductor is characterized by being molded with epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1227237A JPH0391209A (en) | 1989-09-01 | 1989-09-01 | Chip inductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1227237A JPH0391209A (en) | 1989-09-01 | 1989-09-01 | Chip inductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0391209A true JPH0391209A (en) | 1991-04-16 |
Family
ID=16857664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1227237A Pending JPH0391209A (en) | 1989-09-01 | 1989-09-01 | Chip inductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0391209A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0851011A (en) * | 1994-08-05 | 1996-02-20 | Hitachi Ferrite Ltd | Magnetic oxide material |
| US6033594A (en) * | 1997-07-16 | 2000-03-07 | Tdk Corporation | Ferrite and inductor |
| US6183659B1 (en) | 1998-10-23 | 2001-02-06 | Tdk Corporation | Ferrite oxide magnetic material |
| US6583699B2 (en) | 2000-10-31 | 2003-06-24 | Tdk Corporation | Magnetic material and inductor |
| JP2008537519A (en) * | 2005-03-10 | 2008-09-18 | エージーシー フラット グラス ユーロップ エスエー | Automotive window glass with selective scattering |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01101610A (en) * | 1987-10-14 | 1989-04-19 | Nippon Ferrite Ltd | Chip inductor |
| JPH01103953A (en) * | 1987-10-14 | 1989-04-21 | Nippon Ferrite Ltd | Thermal shock resistant ferrite material |
-
1989
- 1989-09-01 JP JP1227237A patent/JPH0391209A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01101610A (en) * | 1987-10-14 | 1989-04-19 | Nippon Ferrite Ltd | Chip inductor |
| JPH01103953A (en) * | 1987-10-14 | 1989-04-21 | Nippon Ferrite Ltd | Thermal shock resistant ferrite material |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0851011A (en) * | 1994-08-05 | 1996-02-20 | Hitachi Ferrite Ltd | Magnetic oxide material |
| US6033594A (en) * | 1997-07-16 | 2000-03-07 | Tdk Corporation | Ferrite and inductor |
| US6183659B1 (en) | 1998-10-23 | 2001-02-06 | Tdk Corporation | Ferrite oxide magnetic material |
| US6583699B2 (en) | 2000-10-31 | 2003-06-24 | Tdk Corporation | Magnetic material and inductor |
| JP2008537519A (en) * | 2005-03-10 | 2008-09-18 | エージーシー フラット グラス ユーロップ エスエー | Automotive window glass with selective scattering |
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