JPH0381296B2 - - Google Patents
Info
- Publication number
- JPH0381296B2 JPH0381296B2 JP12356187A JP12356187A JPH0381296B2 JP H0381296 B2 JPH0381296 B2 JP H0381296B2 JP 12356187 A JP12356187 A JP 12356187A JP 12356187 A JP12356187 A JP 12356187A JP H0381296 B2 JPH0381296 B2 JP H0381296B2
- Authority
- JP
- Japan
- Prior art keywords
- sif
- gas
- sih
- mixed gas
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12356187A JPS63126214A (ja) | 1987-05-20 | 1987-05-20 | シリコン薄膜の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12356187A JPS63126214A (ja) | 1987-05-20 | 1987-05-20 | シリコン薄膜の製造法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10111580A Division JPS5727015A (en) | 1980-07-25 | 1980-07-25 | Manufacture of silicon thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63126214A JPS63126214A (ja) | 1988-05-30 |
| JPH0381296B2 true JPH0381296B2 (enExample) | 1991-12-27 |
Family
ID=14863634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12356187A Granted JPS63126214A (ja) | 1987-05-20 | 1987-05-20 | シリコン薄膜の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63126214A (enExample) |
-
1987
- 1987-05-20 JP JP12356187A patent/JPS63126214A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63126214A (ja) | 1988-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0062079B1 (en) | Thin silicon film and process for preparing same | |
| Chittick et al. | The preparation and properties of amorphous silicon | |
| US4490208A (en) | Method of producing thin films of silicon | |
| US5397737A (en) | Deposition of device quality low H content, amorphous silicon films | |
| JPS61231718A (ja) | pin型光起電力セルの製造方法 | |
| JPS6122622A (ja) | 光起電力パネルの製造方法及び装置 | |
| US4446168A (en) | Method of forming amorphous silicon | |
| JPS6329821B2 (enExample) | ||
| US5151255A (en) | Method for forming window material for solar cells and method for producing amorphous silicon solar cell | |
| US5776819A (en) | Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas | |
| JP2692091B2 (ja) | 炭化ケイ素半導体膜およびその製造方法 | |
| US4485121A (en) | Method for producing a fluorine-containing amorphous semiconductor | |
| KR840002468B1 (ko) | 실리콘 함유층의 제조 공정 | |
| US4321420A (en) | Process for producing a layer containing silicon and photoelectric conversion device utilizing this process | |
| JPH0381296B2 (enExample) | ||
| US4696702A (en) | Method of depositing wide bandgap amorphous semiconductor materials | |
| JPH0376019B2 (enExample) | ||
| JPH0376018B2 (enExample) | ||
| JPS6057617A (ja) | 半導体装置作製方法 | |
| JPH0436454B2 (enExample) | ||
| JPH0682616B2 (ja) | 堆積膜形成方法 | |
| JPS6316616A (ja) | シリコン薄膜およびその製造方法 | |
| JPH02275620A (ja) | N型シリコン薄膜 | |
| JPH03219622A (ja) | シリコン薄膜及びその製造方法 | |
| JPH03145719A (ja) | シリコン薄膜及びその製造方法 |