JPH0380336B2 - - Google Patents
Info
- Publication number
- JPH0380336B2 JPH0380336B2 JP25307185A JP25307185A JPH0380336B2 JP H0380336 B2 JPH0380336 B2 JP H0380336B2 JP 25307185 A JP25307185 A JP 25307185A JP 25307185 A JP25307185 A JP 25307185A JP H0380336 B2 JPH0380336 B2 JP H0380336B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor film
- film
- laser beam
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 96
- 239000013078 crystal Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 18
- 238000005224 laser annealing Methods 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 96
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 238000001953 recrystallisation Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25307185A JPS62112315A (ja) | 1985-11-11 | 1985-11-11 | Ｓｏｉ基板形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25307185A JPS62112315A (ja) | 1985-11-11 | 1985-11-11 | Ｓｏｉ基板形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62112315A JPS62112315A (ja) | 1987-05-23 |
| JPH0380336B2 true JPH0380336B2 (cs) | 1991-12-24 |
Family
ID=17246085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25307185A Granted JPS62112315A (ja) | 1985-11-11 | 1985-11-11 | Ｓｏｉ基板形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62112315A (cs) |
-
1985
- 1985-11-11 JP JP25307185A patent/JPS62112315A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62112315A (ja) | 1987-05-23 |
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