JPH0376018B2 - - Google Patents

Info

Publication number
JPH0376018B2
JPH0376018B2 JP56105703A JP10570381A JPH0376018B2 JP H0376018 B2 JPH0376018 B2 JP H0376018B2 JP 56105703 A JP56105703 A JP 56105703A JP 10570381 A JP10570381 A JP 10570381A JP H0376018 B2 JPH0376018 B2 JP H0376018B2
Authority
JP
Japan
Prior art keywords
thin film
silicon thin
type
film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56105703A
Other languages
English (en)
Japanese (ja)
Other versions
JPS589320A (ja
Inventor
Kazunobu Tanaka
Akihisa Matsuda
Toshihiko Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tonen General Sekiyu KK
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Tonen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Tonen Corp filed Critical Agency of Industrial Science and Technology
Priority to JP56105703A priority Critical patent/JPS589320A/ja
Priority to US06/394,074 priority patent/US4490208A/en
Priority to EP82303526A priority patent/EP0069580B1/en
Priority to DE8282303526T priority patent/DE3276280D1/de
Publication of JPS589320A publication Critical patent/JPS589320A/ja
Priority to US06/790,781 priority patent/US4598304A/en
Publication of JPH0376018B2 publication Critical patent/JPH0376018B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP56105703A 1981-07-08 1981-07-08 シリコン薄膜の製造方法 Granted JPS589320A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56105703A JPS589320A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造方法
US06/394,074 US4490208A (en) 1981-07-08 1982-07-01 Method of producing thin films of silicon
EP82303526A EP0069580B1 (en) 1981-07-08 1982-07-05 Method of producing thin films of silicon
DE8282303526T DE3276280D1 (en) 1981-07-08 1982-07-05 Method of producing thin films of silicon
US06/790,781 US4598304A (en) 1981-07-08 1985-10-23 Thin film devices of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105703A JPS589320A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS589320A JPS589320A (ja) 1983-01-19
JPH0376018B2 true JPH0376018B2 (enrdf_load_stackoverflow) 1991-12-04

Family

ID=14414716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105703A Granted JPS589320A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS589320A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104909B2 (ja) * 1983-10-11 1994-12-21 株式会社日立製作所 ドライプロセス処理方法及びその装置
JPS6347920A (ja) * 1986-08-18 1988-02-29 Hitachi Ltd 結晶性半導体装置の製造方法
JP2892980B2 (ja) * 1995-12-18 1999-05-17 株式会社日立製作所 ドライプロセス処理方法
CN110327475B (zh) * 2019-07-25 2021-06-04 山东大学齐鲁医院 一种固体物料杀菌抑菌的装置和方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same
JPS55154726A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS589320A (ja) 1983-01-19

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