JPS589320A - シリコン薄膜の製造方法 - Google Patents

シリコン薄膜の製造方法

Info

Publication number
JPS589320A
JPS589320A JP56105703A JP10570381A JPS589320A JP S589320 A JPS589320 A JP S589320A JP 56105703 A JP56105703 A JP 56105703A JP 10570381 A JP10570381 A JP 10570381A JP S589320 A JPS589320 A JP S589320A
Authority
JP
Japan
Prior art keywords
thin film
silicon thin
film
plasma
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56105703A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376018B2 (enrdf_load_stackoverflow
Inventor
Kazunobu Tanaka
田中　一宜
Akihisa Matsuda
彰久 松田
Toshihiko Yoshida
利彦 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tonen General Sekiyu KK
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Toa Nenryo Kogyyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Toa Nenryo Kogyyo KK filed Critical Agency of Industrial Science and Technology
Priority to JP56105703A priority Critical patent/JPS589320A/ja
Priority to US06/394,074 priority patent/US4490208A/en
Priority to EP82303526A priority patent/EP0069580B1/en
Priority to DE8282303526T priority patent/DE3276280D1/de
Publication of JPS589320A publication Critical patent/JPS589320A/ja
Priority to US06/790,781 priority patent/US4598304A/en
Publication of JPH0376018B2 publication Critical patent/JPH0376018B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP56105703A 1981-07-08 1981-07-08 シリコン薄膜の製造方法 Granted JPS589320A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56105703A JPS589320A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造方法
US06/394,074 US4490208A (en) 1981-07-08 1982-07-01 Method of producing thin films of silicon
EP82303526A EP0069580B1 (en) 1981-07-08 1982-07-05 Method of producing thin films of silicon
DE8282303526T DE3276280D1 (en) 1981-07-08 1982-07-05 Method of producing thin films of silicon
US06/790,781 US4598304A (en) 1981-07-08 1985-10-23 Thin film devices of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105703A JPS589320A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS589320A true JPS589320A (ja) 1983-01-19
JPH0376018B2 JPH0376018B2 (enrdf_load_stackoverflow) 1991-12-04

Family

ID=14414716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105703A Granted JPS589320A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS589320A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080225A (ja) * 1983-10-11 1985-05-08 Hitachi Ltd ドライプロセス処理方法及びその装置
JPS6347920A (ja) * 1986-08-18 1988-02-29 Hitachi Ltd 結晶性半導体装置の製造方法
JPH08227879A (ja) * 1995-12-18 1996-09-03 Hitachi Ltd ドライプロセス処理方法及びその装置
CN110327475A (zh) * 2019-07-25 2019-10-15 山东大学齐鲁医院 一种固体物料杀菌抑菌的装置和方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same
JPS55154726A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same
JPS55154726A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080225A (ja) * 1983-10-11 1985-05-08 Hitachi Ltd ドライプロセス処理方法及びその装置
JPS6347920A (ja) * 1986-08-18 1988-02-29 Hitachi Ltd 結晶性半導体装置の製造方法
JPH08227879A (ja) * 1995-12-18 1996-09-03 Hitachi Ltd ドライプロセス処理方法及びその装置
CN110327475A (zh) * 2019-07-25 2019-10-15 山东大学齐鲁医院 一种固体物料杀菌抑菌的装置和方法

Also Published As

Publication number Publication date
JPH0376018B2 (enrdf_load_stackoverflow) 1991-12-04

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