JPH0374535B2 - - Google Patents

Info

Publication number
JPH0374535B2
JPH0374535B2 JP58130759A JP13075983A JPH0374535B2 JP H0374535 B2 JPH0374535 B2 JP H0374535B2 JP 58130759 A JP58130759 A JP 58130759A JP 13075983 A JP13075983 A JP 13075983A JP H0374535 B2 JPH0374535 B2 JP H0374535B2
Authority
JP
Japan
Prior art keywords
capacitor
reactor
diode
cathode
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58130759A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6024721A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58130759A priority Critical patent/JPS6024721A/ja
Publication of JPS6024721A publication Critical patent/JPS6024721A/ja
Publication of JPH0374535B2 publication Critical patent/JPH0374535B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732Measures for enabling turn-off

Landscapes

  • Protection Of Static Devices (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)
JP58130759A 1983-07-20 1983-07-20 自己消弧形サイリスタのアブゾ−バ回路 Granted JPS6024721A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58130759A JPS6024721A (ja) 1983-07-20 1983-07-20 自己消弧形サイリスタのアブゾ−バ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58130759A JPS6024721A (ja) 1983-07-20 1983-07-20 自己消弧形サイリスタのアブゾ−バ回路

Publications (2)

Publication Number Publication Date
JPS6024721A JPS6024721A (ja) 1985-02-07
JPH0374535B2 true JPH0374535B2 (de) 1991-11-27

Family

ID=15041969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58130759A Granted JPS6024721A (ja) 1983-07-20 1983-07-20 自己消弧形サイリスタのアブゾ−バ回路

Country Status (1)

Country Link
JP (1) JPS6024721A (de)

Also Published As

Publication number Publication date
JPS6024721A (ja) 1985-02-07

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