JPH0373149B2 - - Google Patents
Info
- Publication number
- JPH0373149B2 JPH0373149B2 JP57068845A JP6884582A JPH0373149B2 JP H0373149 B2 JPH0373149 B2 JP H0373149B2 JP 57068845 A JP57068845 A JP 57068845A JP 6884582 A JP6884582 A JP 6884582A JP H0373149 B2 JPH0373149 B2 JP H0373149B2
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- film
- silicon film
- germanium
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 42
- 239000011521 glass Substances 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052732 germanium Inorganic materials 0.000 claims description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical group [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6884582A JPS58186950A (ja) | 1982-04-26 | 1982-04-26 | 薄膜半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6884582A JPS58186950A (ja) | 1982-04-26 | 1982-04-26 | 薄膜半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30328995A Division JPH08213324A (ja) | 1995-10-30 | 1995-10-30 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58186950A JPS58186950A (ja) | 1983-11-01 |
| JPH0373149B2 true JPH0373149B2 (US08063081-20111122-C00242.png) | 1991-11-20 |
Family
ID=13385425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6884582A Granted JPS58186950A (ja) | 1982-04-26 | 1982-04-26 | 薄膜半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58186950A (US08063081-20111122-C00242.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2771811B2 (ja) * | 1988-02-02 | 1998-07-02 | 富士通株式会社 | 半導体製造装置 |
| US7071042B1 (en) * | 2005-03-03 | 2006-07-04 | Sharp Laboratories Of America, Inc. | Method of fabricating silicon integrated circuit on glass |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135968A (en) * | 1980-03-27 | 1981-10-23 | Canon Inc | Amorphous silicon thin film transistor and manufacture thereof |
-
1982
- 1982-04-26 JP JP6884582A patent/JPS58186950A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135968A (en) * | 1980-03-27 | 1981-10-23 | Canon Inc | Amorphous silicon thin film transistor and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58186950A (ja) | 1983-11-01 |
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